阅读说明：本技术 透明导电体、调光体及电子器件 (Transparent conductor, light adjuster and electronic device ) 是由 三岛康儿 佐藤吉德 原田祥平 于 2019-02-21 设计创作，主要内容包括：本发明提供一种透明导电体(100),其依次具备：透明基材(10)、第一电介质层(21)、含有银或银合金作为主成分的金属层(22)、由半导体构成的第二电介质层(23)、以及导电性与第二电介质层(23)不同的第三电介质层(24),第三电介质层(24)由绝缘体或导电体构成。(The present invention provides a transparent conductor (100) which sequentially comprises: the semiconductor device includes a transparent substrate (10), a first dielectric layer (21), a metal layer (22) containing silver or a silver alloy as a main component, a second dielectric layer (23) composed of a semiconductor, and a third dielectric layer (24) having a conductivity different from that of the second dielectric layer (23), wherein the third dielectric layer (24) is composed of an insulator or a conductor.)

1. A transparent electrical conductor, wherein,

the method sequentially comprises: a transparent substrate, a first dielectric layer, a metal layer containing silver or a silver alloy as a main component, a second dielectric layer composed of a semiconductor, and a third dielectric layer having a conductivity different from that of the second dielectric layer,

the third dielectric layer is made of an insulator or a conductor.

2. The transparent conductive body according to claim 1,

the second dielectric layer is composed of the semiconductor including a metal oxide containing one or both of Zn and Sn as a constituent element,

the third dielectric layer is formed of the conductive body containing a metal oxide containing In as a constituent element.

3. The transparent conductive body according to claim 1,

the second dielectric layer is composed of the semiconductor including a metal oxide containing one or both of Zn and Sn as a constituent element,

the third dielectric layer is comprised of the insulator comprising one or both of a nitride of Si and an oxide of Si.

4. The transparent conductive body according to claim 1 or 2,

the third dielectric layer is formed of the conductive body,

the third dielectric layer is further provided with a fourth dielectric layer made of an insulator containing one or both of a nitride of Si and an oxide of Si on the side opposite to the second dielectric layer.

5. A light-adjusting body, wherein,

comprises a pair of transparent conductors and a light control layer between the pair of transparent conductors,

at least one of the pair of transparent conductors is the transparent conductor according to any one of claims 1 to 4.

6. An electronic device, wherein,

a light modulator according to claim 5 and a power supply are provided.

Technical Field

The present disclosure relates to a transparent conductive body, a light adjuster, and an electronic device.

Background

Transparent conductors are used for various purposes by utilizing their characteristics. For example, a light adjuster including a transparent conductor can adjust the light transmittance by controlling the alignment of liquid crystal molecules (see, for example, patent document 1). Research is being conducted on the use of light modulators for window glass of buildings, automobiles, and the like. As such light modulators, there are known an SPD method and a PDLC method in which electric charges are accumulated in transparent conductors disposed to face each other through a light modulation layer to generate an electric field and transmitted light is modulated.

As a transparent conductor for a light modulator, a transparent conductor having an ITO electrode is known as disclosed in patent document 1. On the other hand, a transparent conductor having a laminated structure in which a metal layer containing silver is laminated so as to be sandwiched between a pair of metal oxide layers is also known (for example, see patent document 2).

Disclosure of Invention

Technical problem to be solved by the invention

Since a transparent conductor having a metal layer containing silver has excellent heat insulating properties, energy saving can be expected by using the transparent conductor in a light adjuster. However, when a conventional transparent conductor having a metal layer containing silver is used in an electronic device, a leakage current may increase depending on the state of use. When the leakage current locally becomes large, not only power consumption becomes large, but also there is a fear that ion migration occurs in the metal layer. This ion migration occurs notably in the metal layer containing silver.

Accordingly, in one aspect, an object of the present disclosure is to provide a transparent conductor capable of suppressing generation of local leakage current. In another aspect, an object of the present disclosure is to provide a light adjuster including a transparent conductor capable of suppressing local generation of a leakage current. In another aspect, an object of the present disclosure is to provide an electronic device including a light adjuster capable of suppressing occurrence of local leakage current.

Means for solving the technical problem

In one aspect, the present disclosure provides a transparent conductor, which includes in order: the semiconductor device includes a transparent substrate, a first dielectric layer, a metal layer containing silver or a silver alloy as a main component, a second dielectric layer made of a semiconductor, and a third dielectric layer having a conductivity different from that of the second dielectric layer, the third dielectric layer being made of an insulator or a conductor.

When a voltage is applied in the direction of lamination of the transparent conductors, electric charges are generated in the metal layer. Such a transparent conductor has a structure in which a plurality of layers made of different materials are stacked, and therefore, it is generally difficult to maintain uniformity of resistance values in the stacking direction. In addition, when the transparent conductor includes a semiconductor, it is generally difficult to form a semiconductor having excellent uniformity of in-plane resistance value. Therefore, when a large voltage is applied to a transparent conductor including a dielectric layer made of a semiconductor and including a plurality of layers made of different materials, the second dielectric layer made of a semiconductor may be locally conductive at a place where a current easily flows, and a leakage current may occur. Therefore, when the transparent conductor includes the third dielectric layer made of an insulator, the second dielectric layer can be prevented from being electrically connected. This can suppress local generation of leakage current. In addition, since the leakage current is reduced as a whole, power consumption can be reduced.

In addition, when the transparent conductor includes the third dielectric layer made of a conductor, electrons that have conducted through the second dielectric layer are dispersed, and local generation of a leakage current can be suppressed. In this way, the third dielectric layer is made of an insulator or a conductor, and thus the third dielectric layer can function as a resistance adjusting layer with respect to the second dielectric layer.

In some embodiments, the second dielectric layer may be made of a semiconductor including a metal oxide containing one or both of Zn and Sn as a constituent element, and the third dielectric layer may be made of a conductor including a metal oxide containing In as a constituent element. Since such a transparent conductor includes the third dielectric layer having excellent conductivity, occurrence of local leakage current can be further suppressed. Further, since the second dielectric layer is formed of a semiconductor including a metal oxide containing one or both of Zn and Sn as a constituent element, the second dielectric layer is excellent in transparency and storage stability.

In another embodiment, the second dielectric layer may be formed of the semiconductor including a metal oxide containing one or both of Zn and Sn as a constituent element, and the third dielectric layer may be formed of an insulator including one or both of a nitride of Si and an oxide of Si.

Since such a transparent conductor includes the third dielectric layer having excellent conductivity, occurrence of local leakage current can be further suppressed. Further, since the second dielectric layer is formed of a semiconductor including a metal oxide containing one or both of Zn and Sn as a constituent element, the second dielectric layer is excellent in transparency and storage stability.

The third dielectric layer of the transparent conductor may be made of a conductor, and the third dielectric layer may further include a fourth dielectric layer made of an insulator containing one or both of a nitride of Si and an oxide of Si on the side opposite to the second dielectric layer. Such a transparent conductor can sufficiently suppress generation of local leakage current and also reduce power consumption.

In another aspect, the present disclosure provides a light control body including a pair of transparent conductors and a light control layer between the pair of transparent conductors, wherein at least one of the pair of transparent conductors is any one of the transparent conductors. Since the light adjuster includes any of the above transparent conductors, occurrence of local leakage current can be suppressed.

The present disclosure provides, in another aspect, an electronic device including the light adjuster and a power supply. Since the electronic device includes the light adjuster having any of the above transparent conductors, occurrence of local leakage current can be suppressed.

ADVANTAGEOUS EFFECTS OF INVENTION

In one aspect, a transparent conductor in which generation of local leakage current can be suppressed can be provided. In another aspect, a light adjuster including a transparent conductor capable of suppressing local leakage current can be provided. In another aspect, an electronic device including a light adjuster capable of suppressing local generation of a leakage current can be provided.

Drawings

FIG. 1 is a schematic cross-sectional view of one embodiment of a transparent conductor.

Fig. 2 is a schematic cross-sectional view of another embodiment of a transparent conductor.

Fig. 3 is a schematic cross-sectional view of another embodiment of a transparent conductor.

Fig. 4 is a schematic cross-sectional view of a dimmer and an electronic device including the dimmer according to one embodiment.

Fig. 5 is a photograph showing an observation image of the metal layer in the light adjuster after the energization test in comparative example 2 using an optical microscope.

Fig. 6 is a photograph showing an observation image of the defect shown in fig. 5 by a scanning electron microscope.

Detailed Description

Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. However, the following embodiments are illustrative of the present invention, and the present invention is not limited to the following embodiments. In the description, the same reference numerals are used for elements having the same structure or the same function, and overlapping description will be omitted as appropriate. The positional relationship such as up, down, left, right, and the like is based on the positional relationship shown in the drawings unless otherwise specified. In addition, the dimensional ratios of the drawings are not limited to the illustrated ratios.

Fig. 1 is a schematic cross-sectional view of a transparent conductor according to the present embodiment. The transparent conductor 100 of fig. 1 includes, in order: a transparent substrate 10, a dielectric layer 21 (first dielectric layer), a metal layer 22 containing silver or a silver alloy as a main component, a dielectric layer 23 (second dielectric layer) composed of a semiconductor, and a dielectric layer 24 (third dielectric layer) composed of a conductor.

The transparent substrate 10 may be a flexible organic resin film. The organic resin film may be an organic resin sheet. Examples of the organic resin film include: polyester films such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyolefin films such as polyethylene and polypropylene, polycarbonate films, acrylic films, norbornene films, polyarylate films, polyethersulfone films, diacetylcellulose films, and triacetylcellulose films. Among these, polyester films such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) are preferable. The above-mentioned 1 species may be used alone or in combination of 2 or more species.

From the viewpoint of rigidity, the thicker the transparent substrate 10 is, the more preferable. On the other hand, from the viewpoint of making the transparent conductor 100 thinner, the thinner the transparent substrate 10 is, the more preferable. From such a viewpoint, the thickness of the transparent substrate 10 is, for example, 10 to 200 μm.

The transparent substrate 10 is not limited to a transparent substrate made of an organic resin, and may be a molded product of an inorganic compound such as soda-lime glass, alkali-free glass, or quartz glass.

By "transparent" in this disclosure is meant visible light transmission, which may also scatter light to some extent. The concept of "transparent" in the present disclosure also includes the case of scattering of light, which is generally referred to as translucency. The transparent substrate 10 has a visible light transmittance of, for example, 80% or more, preferably 90% or more, in a wavelength range of 450 to 650 nm.

The dielectric layer 21 may be made of a semiconductor or an insulator. From the viewpoint of sufficiently suppressing the electron migration of the metal layer 22, the dielectric layer 21 is preferably made of a semiconductor. Specifically, the dielectric layer 21 may be a layer containing a metal oxide, or may be a metal oxide layer made of a metal oxide.

The dielectric layer 21 may contain, for example, four components of zinc oxide, tin oxide, indium oxide, and titanium oxide, or three components of zinc oxide, indium oxide, and titanium oxide as main components. By containing the above four components in the dielectric layer 21, the dielectric layer 21 having both sufficiently high conductivity and transparency can be obtained. The zinc oxide is, for example, ZnO, and the indium oxide is, for example, In₂O₃. Titanium oxide, for example TiO₂Tin oxide is, for example, SnO₂. The ratio of the metal atoms to the oxygen atoms of each metal oxide may deviate from the stoichiometric ratio.

The "main component" in the present disclosure means a ratio of 80% by mass or more with respect to the whole. Dielectric layer 21 may have a higher resistance than dielectric layer 23. Therefore, the dielectric layer 21 may contain less tin oxide than the dielectric layer 23, or may contain no tin oxide.

When the dielectric layer 21 contains three components of zinc oxide, indium oxide, and titanium oxide, the three components are converted into ZnO and In, respectively₂O₃And TiO₂In this case, the content of ZnO is preferably the largest among the three components with respect to the total of the three components. From the viewpoint of suppressing the light absorption of the dielectric layer 21, the content of ZnO is, for example, 45 mol% or more with respect to the total of the three components. In the dielectric layer 21, the content of ZnO is, for example, 85 mol% or less with respect to the total of the three components, from the viewpoint of sufficiently improving the storage stability in an environment of high temperature and high humidity.

In the dielectric layer 21, In is from the viewpoint of suppressing the light absorption of the dielectric layer 21₂O₃The content of (b) is, for example, 35 mol% or less based on the total of the three components. In the dielectric layer 21, the storage stability under the environment of high temperature and high humidity is sufficiently improvedFrom a qualitative point of view, In₂O₃The content of (b) is, for example, 10 mol% or more based on the total of the three components.

In the dielectric layer 21, TiO is used from the viewpoint of suppressing the light absorption of the dielectric layer 21₂The content of (b) is, for example, 20 mol% or less based on the total of the three components. In the dielectric layer 21, TiO is used from the viewpoint of sufficiently improving the storage stability in a high-temperature and high-humidity environment₂The content of (b) is, for example, 5 mol% or more based on the total of the three components. The contents of the three components are respectively converted to ZnO and In₂O₃And TiO₂And the obtained value.

The dielectric layer 23 is made of a semiconductor. Specifically, the dielectric layer 21 may be a layer containing a metal oxide, or may be a metal oxide layer made of a metal oxide.

The dielectric layer 23 contains, for example, four components of zinc oxide, indium oxide, titanium oxide, and tin oxide, or three components of zinc oxide, titanium oxide, and tin oxide as main components. The dielectric layer 23 can have both conductivity and high transparency by containing the above four or three components as main components. The zinc oxide is, for example, ZnO, and the indium oxide is, for example, In₂O₃. Titanium oxide, for example TiO₂Tin oxide is, for example, SnO₂. The ratio of the metal atoms to the oxygen atoms in each of the above metal oxides may be deviated from the stoichiometric ratio.

In the dielectric layer 23, the content of zinc oxide is, for example, 20 mol% or more with respect to the total of the above four components, from the viewpoint of maintaining high transparency and sufficiently improving conductivity. In the dielectric layer 23, the content of zinc oxide is, for example, 68 mol% or less with respect to the total of the above four components, from the viewpoint of sufficiently improving the storage stability in a high-temperature and high-humidity environment.

In the dielectric layer 23, the content of indium oxide is, for example, 35 mol% or less with respect to the total of the above four components, from the viewpoint of sufficiently reducing the surface resistance and making the transmittance within an appropriate range. In the dielectric layer 23, the content of indium oxide is, for example, 15 mol% or more with respect to the total of the four components, from the viewpoint of sufficiently improving the storage stability in an environment of high temperature and high humidity.

In the dielectric layer 23, the content of titanium oxide is, for example, 20 mol% or less with respect to the total of the above four components, from the viewpoint of ensuring the transmittance of visible light. In the dielectric layer 23, the content of titanium oxide is, for example, 5 mol% or more with respect to the total of the above four components from the viewpoint of sufficiently improving the alkali resistance.

In the dielectric layer 23, the content of tin oxide is, for example, 40 mol% or less with respect to the total of the above four components, from the viewpoint of ensuring high transparency. In the dielectric layer 23, the content of tin oxide is, for example, 5 mol% or more with respect to the total of the above four components, from the viewpoint of sufficiently improving the storage stability in an environment of high temperature and high humidity. The contents of the four components are respectively converted to ZnO and In₂O₃、TiO₂And SnO₂And the obtained value.

In the dielectric layer 23, the content of zinc oxide is, for example, 20 mol% or more with respect to the total of the three components, from the viewpoint of maintaining high transparency and sufficiently improving conductivity. In the dielectric layer 23, the content of zinc oxide is, for example, 80 mol% or less with respect to the total of the above four components, from the viewpoint of sufficiently improving the storage stability in a high-temperature and high-humidity environment.

In the dielectric layer 23, the content of titanium oxide is, for example, 40 mol% or less with respect to the total of the three components, from the viewpoint of ensuring the transmittance of visible light. In the dielectric layer 23, the content of titanium oxide is, for example, 5 mol% or more with respect to the total of the three components, from the viewpoint of sufficiently improving the alkali resistance.

In the dielectric layer 23, the content of tin oxide is, for example, 40 mol% or less with respect to the total of the three components, from the viewpoint of ensuring high transparency. In the dielectric layer 23, oxidation is performed from the viewpoint of sufficiently improving the storage stability in a high-temperature and high-humidity environmentThe content of tin is, for example, 5 mol% or more with respect to the total of the three components. The contents of the three components are respectively converted to ZnO and In₂O₃、TiO₂And SnO₂And the obtained value.

The dielectric layers 21 and 23 have functions of adjusting optical characteristics, protecting the metal layer 22, and ensuring electrical conductivity. The dielectric layers 21 and 23 may contain trace components or inevitable components in addition to the above components within a range not significantly impairing the functions thereof. However, from the viewpoint of producing the transparent conductor 100 having sufficiently high characteristics, the higher the ratio of the three components or the total of the four components in the dielectric layer 21 and the dielectric layer 23 is, the more preferable it is. These proportions are, for example, 95% by mass or more, and preferably 97% by mass or more. The dielectric layer 21 may be composed of the above three components. The dielectric layer 23 may be composed of the above-described four components or three components.

The composition of the dielectric layer 21 may be the same as or different from that of the dielectric layer 23. If the dielectric layer 21 and the dielectric layer 23 are of the same composition, the manufacturing process can be simplified. For example, the dielectric layer 21 may be a layer containing four components of zinc oxide, indium oxide, titanium oxide, and tin oxide as main components, similarly to the dielectric layer 23. In this case, the specific ratio of each metal oxide to the total of the four components in the dielectric layer 21 may be the same as that of the dielectric layer 23. Therefore, the contents of the dielectric layer 23 regarding the numerical ranges of the respective components can also be applied to the dielectric layer 21.

The dielectric layer 23 is a layer containing the above four components as main components, and the dielectric layer 21 may be a layer containing three components of zinc oxide, indium oxide, and titanium oxide as main components. This can reduce the manufacturing cost while maintaining high transparency. In this case, although the dielectric layer 21 has lower conductivity than the dielectric layer 23, the dielectric layer 23 can ensure conductivity, and therefore, there is no particular problem.

The thicknesses of the dielectric layer 21 and the dielectric layer 23 are, for example, 3 to 70nm, preferably 5 to 50nm, from the viewpoint of satisfying both high transparency and conductivity at a high level. The thicknesses of the dielectric layer 21 and the dielectric layer 23 may be the same or different from each other. For example, by individually adjusting the thicknesses of the dielectric layers 21 and 23, it is possible to suppress a change in the color tone of the transmitted color, or to effectively utilize an optical interference effect for converting the reflected light generated in the metal layer 22 into the transmitted light.

The dielectric layers 21 and 23 can be formed by a vacuum deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, or a CVD method. Among these methods, the sputtering method is preferable in terms of the capability of reducing the size of the film forming chamber and the high film forming speed. As the sputtering method, DC magnetron sputtering may be mentioned. As the target, an oxide target, a metal or a semi-metal target can be used.

The metal layer 22 contains silver or a silver alloy as a main component. The total content of silver and the silver alloy in the metal layer 22 may be, for example, 90 mass% or more, or 95 mass% or more in terms of silver element. The metal layer 22 may contain a metal element other than silver. For example, the environmental resistance of the metal layer 22 can be improved by containing at least one element selected from Cu, Nd, Pt, Pd, Bi, Sn, and Sb as a constituent element or a metal element of a silver alloy. Examples of silver alloys include: Ag-Pd, Ag-Cu, Ag-Pd-Cu, Ag-Nd-Cu, Ag-In-Sn, and Ag-Sn-Sb.

The thickness of the metal layer 22 is, for example, 1 to 15nm, preferably 5 to 12.5nm, and more preferably 7.5 to 12.5nm, from the viewpoint of sufficiently reducing the transmittance of infrared rays and setting the transmittance of visible light to an appropriate range.

The metal layer 22 can be formed using, for example, DC magnetron sputtering. The method for forming the metal layer 22 is not particularly limited, and other vacuum film forming methods using plasma, ion beam, or the like, coating methods using a liquid in which constituent components are dispersed in an appropriate binder, or the like can be appropriately selected.

The dielectric layer 24 is a layer having a conductivity different from that of the dielectric layer 23 and is made of an insulatorIn the present disclosure, the "insulator", "conductor" and "semiconductor" constituting each layer have different conductivities from each other, and in the present disclosure, the surface resistance is 1 × 10⁸An object of Ω/sq or more corresponds to an "insulator". The surface resistance is 1 × 10⁴～1×10⁷The object of Ω/sq is equivalent to a "semiconductor". the surface resistance is 1 × 10³An object below Ω/sq corresponds to an "electric conductor".

The dielectric layer 24 may be made of an insulator containing one or both of a nitride of Si and an oxide of Si, for example. The nitride of Si being silicon nitride, e.g. with Si₃N₄And (4) showing. The oxide of Si being silicon oxide, e.g. SiO or SiO₂And (4) showing. The ratio of silicon atoms to nitrogen atoms and oxygen atoms in the silicon nitride and silicon oxide may be deviated from the stoichiometric ratio. When the dielectric layer 24 contains both a nitride of Si and an oxide of Si, it may be contained as silicon oxynitride, or may contain silicon nitride and silicon oxide, respectively.

The dielectric layer 24 has a thickness of, for example, 1 to 50nm, preferably 2 to 40nm, and more preferably 3 to 30nm, from the viewpoint of sufficiently reducing the leakage current and ensuring sufficient transparency. From the same viewpoint, the total thickness of the dielectric layer 23 and the dielectric layer 24 may be, for example, 4 to 120nm, or 5 to 90 nm.

The dielectric layer 24 can be formed by a vacuum deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, or a CVD method. Among these methods, the sputtering method is preferable in terms of the ability to reduce the size of the film forming chamber and the high film forming speed. As the sputtering method, DC magnetron sputtering may be mentioned. As the target, a silicon target can be used, and sputtering can be performed in an atmosphere of nitrogen, oxygen, or a mixed gas of nitrogen and oxygen.

The transparent conductor 100 of fig. 1 includes, in order: a transparent substrate 10, a dielectric layer 21, a metal layer 22 containing silver or a silver alloy as a main component, a dielectric layer 23 composed of a semiconductor, and a dielectric layer 24 composed of an insulator. Since the dielectric layer 24 is made of an insulator, leakage current leaking from the metal layer 22 to the dielectric layer 23 can be reduced. This can reduce power consumption when the light adjuster and the electronic device are manufactured using the transparent conductor 100. In addition, since the occurrence of local leakage current can be suppressed, the occurrence of electron migration in the metal layer 22 can be suppressed.

Fig. 2 is a schematic cross-sectional view of another embodiment of a transparent electrical conductor 110. The transparent conductor 110 includes: a transparent substrate 10, a dielectric layer 21 (first dielectric layer), a metal layer 22 containing silver or a silver alloy as a main component, a dielectric layer 23 (second dielectric layer) composed of a semiconductor, and a dielectric layer 25 (third dielectric layer) composed of a conductor. That is, the transparent conductor 110 is different from the transparent conductor 100 of fig. 1 in that the dielectric layer 23 includes the dielectric layer 25 made of a conductor. The transparent conductor 110 may have the same composition, thickness, function, and the like as those of the transparent conductor 100 except for the dielectric layer 25. Therefore, the description of the transparent conductor 100 in fig. 1 can be applied to each layer of the transparent conductor 110.

The dielectric layer 25 is a layer having a conductivity different from that of the dielectric layer 23, and is made of a conductor. The dielectric layer 25 may be made of, for example, a metal oxide. The metal oxide may contain In as a constituent element, or may contain In and Sn as constituent elements. The metal oxide is, for example, Indium Tin Oxide (ITO).

The dielectric layer 25 has a thickness of, for example, 1 to 50nm, preferably 3 to 40nm, and more preferably 5 to 30nm, from the viewpoint of sufficiently reducing local leakage current and ensuring sufficient transparency.

The dielectric layer 25 can be formed by a vacuum deposition method such as a vacuum deposition method, a sputtering method, an ion plating method, or a CVD method. Among these methods, the sputtering method is preferable in terms of the ability to reduce the size of the film forming chamber and the high film forming speed. As the sputtering method, DC magnetron sputtering may be mentioned. As the target, an oxide target, a metal or a semi-metal target can be used.

The transparent conductor 110 includes: a transparent substrate 10, a dielectric layer 21, a metal layer 22 containing silver or a silver alloy as a main component, a dielectric layer 23 composed of a semiconductor, and a dielectric layer 25 composed of a conductor. Since the dielectric layer 24 is made of a conductive material, leakage current from the metal layer 22 can be dispersed. This can suppress local generation of leakage current. Therefore, the occurrence of electron migration in the metal layer 22 can be suppressed.

Fig. 3 is a schematic cross-sectional view of another embodiment of a transparent conductor 120. The transparent conductor 120 includes: a transparent substrate 10, a dielectric layer 21 (first dielectric layer), a metal layer 22 containing silver or a silver alloy as a main component, a dielectric layer 23 (second dielectric layer) composed of a semiconductor, a dielectric layer 25 (third dielectric layer) composed of a conductor, and a dielectric layer 24 (fourth dielectric layer) composed of an insulator. That is, the transparent conductor 120 is different from the transparent conductor 100 of fig. 1 in that the dielectric layer 25 is further provided between the dielectric layer 23 and the dielectric layer 24. The dielectric layer 21, the metal layer 22, the dielectric layer 23, and the dielectric layer 24 may have the same composition, thickness, function, and the like as those of the transparent conductor 100. The dielectric layer 25 may have the same composition, thickness, function, and the like as the transparent conductor 110. Therefore, the explanation contents of the transparent conductor 100 and the transparent conductor 110 can be applied to the layers of the transparent conductor 120, which are common to the transparent conductor 100 and the transparent conductor 110.

Since the transparent conductor 120 includes the dielectric layer 25 made of a conductor on the dielectric layer 23, leakage current from the metal layer 22 can be dispersed. Since the transparent conductor 120 includes the dielectric layer 24 made of an insulator on the dielectric layer 24, the leakage current from the metal layer 22 can be reduced. Therefore, the suppression of the electron migration in the metal layer 22 and the reduction of the power consumption can be achieved at the same time at a high level.

The transparent conductor of the present disclosure is not limited to the transparent conductors of fig. 1 to 3. For example, the transparent conductors 100, 110, and 120 may be provided with any other layers. For example, a hard coat layer containing a cured resin may be provided between the transparent substrate 10 and the dielectric layer 21, and/or on the side of the transparent substrate 10 opposite to the side of the dielectric layer 21. This can improve the hardness and strength of the transparent conductor. Any layer is not limited thereto.

The transparent conductors 100, 110, 120 may have a visible light transmittance of 20 to 80%, for example. The visible light reflectance of the transparent conductors 100, 110, 120 may be, for example, 5 to 20%. The infrared reflectance of the transparent conductors 100, 110, and 120 may be, for example, 40% to 60%. This can improve heat insulation properties and sufficiently suppress the occurrence of heat cracks. The infrared reflectance of the transparent conductors 100, 110, and 120 may be, for example, 60% or less from the viewpoint of ease of manufacturing. The transparent conductors 100, 110, and 120 may have a transmittance of infrared rays of 5 to 35%, for example.

The transmittance and reflectance of visible light according to the present disclosure are average values of measured values in a wavelength range of 450 to 650 nm. The transmittance and reflectance of infrared rays are average values of measured values in a wavelength range of 700 to 1200 nm. The transmittance and reflectance of visible light and the transmittance and reflectance of infrared light were obtained as average values of the results of measurement at a10 nm pitch using a commercially available measuring apparatus.

Fig. 4 is a schematic view of a light modulator 200 and an electronic device 300 of an embodiment. The light adjuster 200 of fig. 4 includes a pair of transparent conductors 100a and 100b and a light adjusting layer 40 therebetween. The pair of transparent conductors 100a and 100b are stacked such that the dielectric layer 24 is on the side of the light modulation layer 40. The pair of transparent conductors 100a and 100b are stacked in a staggered manner so that a part of the surface of the dielectric layer 24 is exposed. In the present embodiment, the transparent conductor 100 is used for the application of the light adjuster.

Examples of the light modulation layer 40 include a light modulation layer of an electrochromic system, an SPD (Suspended particle device) system, a PDLC (Polymer Dispersed liquid Crystal) system, and the like. PDLC has a higher refractive index than the atmosphere when no voltage is applied, and therefore, cloudiness occurs. That is, light is scattered at its surface and recognized as opaque white. On the other hand, PDLC has a refractive index substantially equal to that of the atmosphere when a voltage is applied, and therefore light is not scattered on its surface and becomes transparent. In this way, the transmittance of visible light can be adjusted. The light modulation layer 40 includes a matrix made of, for example, a polymer and a liquid crystal dispersed in the matrix.

The liquid crystal included in the light control layer 40 is not particularly limited, and examples thereof include nematic, smectic, and cholesteric liquid crystals. On the other hand, the polymer contained in the light control layer 40 is also not particularly limited, and examples thereof include acrylic resins, vinyl ether resins, and ene-thiol resins. The content of the liquid crystal in the light modulation layer 40 is, for example, 20 to 70 mass%. The light control layer 40 can be formed by curing a resin composition containing a liquid crystal. The resin composition contains, for example, an oligomer (prepolymer), a polyfunctional or monofunctional acrylic monomer, a vinyl ether monomer, and a liquid crystal compound. The resin composition may contain a photo-curing initiator and a dye.

Examples of the prepolymer include thiol prepolymers having a thiol group. Examples of the acrylic monomer include: hydroxyethyl acrylate (HEA), hydroxyethyl methacrylate (HEMA), 1, 6-hexanediol diacrylate (HDDA), tripropylene glycol diacrylate (TPGDA), trimethylolpropane triacrylate (TMPTA), and the like. Examples of the vinyl ether monomer include butanediol monovinyl ether, 1, 4-cyclohexanedimethanol monovinyl ether, and triethylene glycol divinyl ether.

Examples of the photo-curing initiator include radical-based photo-curing initiators. Examples thereof include: diphenyl (2,4, 6-trimethylbenzoyl) -phosphine oxide, phenylbis (2,4, 6-trimethylbenzoyl) -phosphine oxide, bis (. eta.5-2, 4-cyclopentadien-1-yl) bis [2, 6-difluoro-3- (1H-pyrrol-1-yl) phenyl ] titanium, 1-hydroxycyclohexyl phenyl ketone, and α, α -dimethoxy- α' -hydroxyacetophenone, and the like. The thickness of the light modulation layer 40 is, for example, 1 to 100 μm.

In the case of manufacturing the light modulator 200, the dielectric layer 21, the metal layer 22, the dielectric layer 23, and the dielectric layer 23 are formed in this order on one surface of the transparent substrate 10, and a pair of transparent conductors 100a and 100b is obtained. The pair of transparent conductors 100a and 100b are stacked with the dielectric layer 23 facing each other through a resin composition containing a liquid crystal. Then, the resin composition is cured by light irradiation or heating, whereby the pair of transparent conductors 100a and 100b are joined by the light control layer 40.

The pair of transparent conductors 100 includes a dielectric layer 24, a dielectric layer 23, a metal layer 22, a dielectric layer 21, and a transparent substrate 10 from the light control layer 40 side. The light adjuster 200 includes the transparent conductor 100 that can suppress local leakage current. Therefore, the occurrence of electron migration in each metal layer 22 can be suppressed.

The thicknesses of the transparent base material and the respective layers of the light adjuster 200 and the transparent conductor 100 constituting the light adjuster can be measured by the following procedure. The light adjuster 200 or the transparent conductor 100 is cut by a Focused Ion Beam (FIB) apparatus to obtain a cross section. The cross section was observed using a Transmission Electron Microscope (TEM), and the thickness of each layer was measured. The measurement is preferably performed at 10 or more positions arbitrarily selected, and an average value thereof is obtained. As a method of obtaining the cross section, a microtome may be used as a device other than the focused ion beam device. As a method for measuring the thickness, a Scanning Electron Microscope (SEM) may be used. In addition, the film thickness may be measured using a fluorescent X-ray apparatus.

The electronic device 300 includes: the light adjuster 200 includes an electrode 50a on an exposed surface of the dielectric layer 24 of one transparent conductor 100a, an electrode 50b on an exposed surface of the dielectric layer 24 of the other transparent conductor 100b, and a lead wire 52 electrically connecting the electrode 50a and the electrode 50b via an ac power supply 54. The light modulation layer 40 is interposed between the electrode 50a and the electrode 50 b. Therefore, as shown in fig. 4, positive charges and negative charges are generated in the pair of metal layers 22 by the potential difference generated by the ac power source 54. This generates an electric field, and the orientation of the liquid crystal included in the light modulation layer 40 changes. In this way, dimming is performed by the light adjuster 200.

Since the electronic device 300 includes the transparent conductors 100, occurrence of local leakage current between the pair of transparent conductors 100 can be suppressed. Therefore, the occurrence of the electron migration in the light adjuster 200 can be suppressed.

In the present embodiment, the light adjuster 200 and the electronic device 300 including the pair of transparent conductors 100 have been described, but the light adjuster of the present disclosure is not limited thereto. For example, at least one of the pair of transparent conductors 100 may be the transparent conductor 110, the transparent conductor 120, or a different transparent conductor. If at least one of the pair of transparent conductors 100 is the transparent conductor 110 or the transparent conductor 120, leakage current between the pair of transparent conductors 100 can be suppressed, and power consumption of the light modulator and the electronic device can be reduced.

While some embodiments have been described above, the present disclosure is not limited to any of the above embodiments. The transparent conductor of the present disclosure may be used for applications other than a light adjuster. The manufacturing method may be a common single-sheet method, a roll-to-roll method, or the like. In any of the production methods, the same effect can be obtained.