阅读说明：本技术 一种提升选通管器件性能的方法、系统、设备和介质 (Method, system, equipment and medium for improving performance of gate tube device ) 是由 罗庆 丁亚欣 余杰 吕杭炳 刘明 于 2020-07-06 设计创作，主要内容包括：本发明提供了一种提升选通管器件性能的方法、系统、设备和介质。所述方法包括：确定选通管器件的直流操作时的操作电压和限制电流；对选通管器件施加操作电压和限制电流,直至关态漏电流减小；继续对选通管器件施加操作电压和限制电流,直至关态漏电流减小到最小值；并获取与关态漏电流最小值所对应的第一操作电压和第一限制电流,并以该第一操作电压和第一限制电流为中心获取操作电压区间和限制电流区间；对选通管器件施加在操作电压区间和限制电流区间范围内的第二操作电压和第二限制电流,以进行直流操作或脉冲操作；确定选通管器件的反向操作电压,对选通管器件施加所述反向操作电压,使选通管器件出现复位现象。(The invention provides a method, a system, equipment and a medium for improving the performance of a gate tube device. The method comprises the following steps: determining an operating voltage and a limiting current of the gating device during direct current operation; applying an operating voltage and a limiting current to the gate tube device until the off-state leakage current is reduced; continuously applying operating voltage and limiting current to the gate tube device until the off-state leakage current is reduced to the minimum value; acquiring a first operating voltage and a first limiting current corresponding to the minimum value of the off-state leakage current, and acquiring an operating voltage interval and a limiting current interval by taking the first operating voltage and the first limiting current as centers; applying a second operating voltage and a second limiting current within the operating voltage interval and the limiting current interval to the gate tube device to perform direct current operation or pulse operation; and determining the reverse operation voltage of the gating tube device, and applying the reverse operation voltage to the gating tube device to enable the gating tube device to have a reset phenomenon.)

1. A method for improving performance of a gate tube device is characterized by comprising the following steps:

step S1, determining the operating voltage and the limiting current of the gating device during the direct current operation;

step S2, applying the operating voltage and the limiting current to the gate tube device to make the gate tube device circulate under the direct current until the off-state leakage current is reduced;

step S3, continuing to apply the operating voltage and the limiting current to the gate tube device, and circulating the gate tube device under the direct current until the off-state leakage current is reduced to the minimum value; acquiring a first operating voltage and a first limiting current corresponding to the minimum value of the off-state leakage current, and acquiring an operating voltage interval and a limiting current interval by taking the first operating voltage and the first limiting current as centers;

step S4, applying a second operating voltage and a second limiting current within the operating voltage interval and the limiting current interval to the gate tube device to perform direct current operation or pulse operation;

and step S5, determining the reverse operation voltage of the gate tube device, and applying the reverse operation voltage to the gate tube device to enable the gate tube device to have a reset phenomenon.

2. The method according to claim 1, wherein the step S1 includes:

under direct current, acquiring minimum operating voltage, maximum operating voltage, highest limiting current and lowest limiting current which enable a gate tube device to have a switching phenomenon;

determining the operating voltage of the gating device during the direct current operation to be 0.5v-1v greater than the minimum operating voltage, and determining the limiting current of the gating device during the direct current operation to be 2-5 times of the minimum limiting current.

3. The method of claim 1, wherein in step S2, the off-state leakage current is reduced such that a current off-state leakage current has a value smaller than an initial off-state leakage current.

4. The method of claim 1, wherein in step S3, the off-state leakage currents are reduced to a minimum value, where the off-state leakage currents have values smaller than the first N off-state leakage currents, and the off-state leakage currents have values smaller than the last M off-state leakage currents, where N ≧ 1, and M ≧ 1.

5. The method of claim 1, wherein said determining a reverse operating voltage of the gating device in step S5 comprises:

performing a current-unlimited operation on the gate transistor device in a voltage direction opposite to the voltage direction of step S2 to obtain a minimum reverse operation voltage and a maximum reverse operation voltage for causing the gate transistor device to have a reset phenomenon;

determining a reverse operation voltage of the gating device to be 0-1v greater than the minimum reverse operation voltage and less than the maximum reverse operation voltage.

6. The method of any of claims 1-5, wherein the gating device is NbO_xA gating device.

7. A system for improving performance of a gate tube device, the system comprising:

the device comprises an operating voltage and limiting current determining module, a voltage and limiting current determining module and a voltage and limiting current determining module, wherein the operating voltage and limiting current determining module is used for determining the operating voltage and limiting current of the gating device during direct-current operation;

the first execution module is used for applying the operating voltage and the limiting current to the gate tube device to enable the gate tube device to circulate under direct current until off-state leakage current is reduced;

an operation voltage interval and limiting current interval obtaining module, configured to continuously apply the operation voltage and limiting current to the gate transistor device, so that the gate transistor device is cycled under direct current until the off-state leakage current is reduced to a minimum value; acquiring a first operating voltage and a first limiting current corresponding to the minimum value of the off-state leakage current, and acquiring an operating voltage interval and a limiting current interval by taking the first operating voltage and the first limiting current as centers;

the second execution module is used for applying a second operating voltage and a second limiting current within the operating voltage interval and the limiting current interval to the gate tube device so as to perform direct current operation or pulse operation;

and the reset module is used for determining the reverse operation voltage of the gate tube device and applying the reverse operation voltage to the gate tube device to enable the gate tube device to have a reset phenomenon.

8. An electronic device, characterized in that the device comprises:

a processor;

a memory storing a computer executable program which, when executed by the processor, causes the processor to perform a method of boosting gate tube device performance as claimed in claims 1-6.

9. A computer-readable storage medium, on which a computer program is stored, which program, when being executed by a processor, is adapted to carry out the method of improving the performance of a gate pipe device as claimed in claims 1-6.

Technical Field

The invention relates to a method, a system, equipment and a medium for improving the performance of a gate tube device.

Background

With the development of memory technology, a plurality of new non-volatile memories (NVM) with excellent performance are widely used. A Resistive Random Access Memory (RRAM) among new nonvolatile memories has a simple Metal-insulator-Metal (MIM) structure and is easily integrated in a Complementary Metal Oxide Semiconductor (CMOS) circuit. Among them, the cross-point RRAM has a high memory density and an excellent scalability, but the cross-point RRAM has a disadvantage of a high leakage current, and the gate transistor device has advantages of a simple structure and a large nonlinearity, and is considered as a strong candidate for solving the problem of the leakage current.

Based on NbO_xThe gating tube device has the advantages of high on-state current, high switching speed and the like, but the gating tube device contains NbO_xThe circuit of the gating device needs to be operated on NbO_xThe gating device performs multiple switching, NbO with increasing switching times_xThe problems of increased leakage current and reduced on-off ratio of the gate tube device can be solved, and NbO under the direct current operation is greatly limited_xThe lifetime of the gating device. Therefore, how to promote NbO_xGating device performance to extend NbO under DC operation_xThe lifetime of strobe devices is a concern to researchers today.

Disclosure of Invention

Technical problem to be solved

How to promote NbO_xGating device performance to extend NbO under DC operation_xLifetime of strobe device

(II) technical scheme

In order to solve the above problem, an aspect of the present invention provides a method for improving performance of a gate tube device, where the method includes:

step S1, determining the operating voltage and the limiting current of the gating device during the direct current operation;

step S2, applying the operating voltage and the limiting current to the gate tube device to make the gate tube device circulate under the direct current until the off-state leakage current is reduced;

step S3, continuing to apply the operating voltage and the limiting current to the gate tube device, and circulating the gate tube device under the direct current until the off-state leakage current is reduced to the minimum value; acquiring a first operating voltage and a first limiting current corresponding to the minimum value of the off-state leakage current, and acquiring an operating voltage interval and a limiting current interval by taking the first operating voltage and the first limiting current as centers;

step S4, applying a second operating voltage and a second limiting current within the operating voltage interval and the limiting current interval to the gate tube device to perform direct current operation or pulse operation;

and step S5, determining the reverse operation voltage of the gate tube device, and applying the reverse operation voltage to the gate tube device to enable the gate tube device to have a reset phenomenon.

Optionally, the step S1 includes: under direct current, acquiring minimum operating voltage, maximum operating voltage, highest limiting current and lowest limiting current which enable a gate tube device to have a switching phenomenon; determining the operating voltage of the gating device during the direct current operation to be 0.5v-1v greater than the minimum operating voltage, and determining the limiting current of the gating device during the direct current operation to be 2-5 times of the minimum limiting current.

Optionally, in step S2, the off-state leakage current is reduced to a value that the current off-state leakage current is smaller than the initial off-state leakage current.

Optionally, in step S3, the off-state leakage current is reduced to a minimum value, where the values of the off-state leakage current are all smaller than the values of the first N off-state leakage currents, and the values of the off-state leakage current are all smaller than the values of the last M off-state leakage currents, where N is greater than or equal to 1, and M is greater than or equal to 1.

Optionally, in step S5, the determining the reverse operation voltage of the gating device includes: performing a current-unlimited operation on the gate transistor device in a voltage direction opposite to the voltage direction of step S2 to obtain a minimum reverse operation voltage and a maximum reverse operation voltage for causing the gate transistor device to have a reset phenomenon; determining a reverse operation voltage of the gating device to be 0-1v greater than the minimum reverse operation voltage and less than the maximum reverse operation voltage.

Optionally, the gating device is NbO_xA gating device.

In another aspect, the present invention provides a system for improving the performance of a gated pipe device, the system comprising:

the device comprises an operating voltage and limiting current determining module, a voltage and limiting current determining module and a voltage and limiting current determining module, wherein the operating voltage and limiting current determining module is used for determining the operating voltage and limiting current of the gating device during direct-current operation;

the first execution module is used for applying the operating voltage and the limiting current to the gate tube device to enable the gate tube device to circulate under direct current until off-state leakage current is reduced;

an operation voltage interval and limiting current interval obtaining module, configured to continuously apply the operation voltage and limiting current to the gate transistor device, so that the gate transistor device is cycled under direct current until the off-state leakage current is reduced to a minimum value; acquiring a first operating voltage and a first limiting current corresponding to the minimum value of the off-state leakage current, and acquiring an operating voltage interval and a limiting current interval by taking the first operating voltage and the first limiting current as centers;

the second execution module is used for applying a second operating voltage and a second limiting current within the operating voltage interval and the limiting current interval to the gate tube device so as to perform direct current operation or pulse operation;

and the reset module is used for determining the reverse operation voltage of the gate tube device and applying the reverse operation voltage to the gate tube device to enable the gate tube device to have a reset phenomenon.

Yet another aspect of the present invention provides an electronic device, the device comprising: a processor; a memory storing a computer executable program which, when executed by the processor, causes the processor to perform a method of improving gate pipe device performance as described above.

Yet another aspect of the present invention provides a computer readable storage medium having stored thereon a computer program which, when executed by a processor, implements a method of improving performance of a gate pipe device as described above.

(III) advantageous effects

Due to NbO under direct current circulation_xUnstable phenomena such as increased leakage current and decreased on-off ratio of gate tube device can occur, for NbO_xThe situation that the leakage current is reduced to the minimum value can occur after the gating tube device performs direct current circulation, the required target operation is performed after the situation occurs, the leakage current generated by the target operation can be reduced, and then NbO (niobium boron oxide) is subjected to direct current circulation_xThe invention reduces the leakage current of the gating tube device, adjusts the switching ratio, and improves the stability of the gating tube device, the service life of the switch and the performance of a circuit where the gating tube device is located. The method provided by the invention can be executed through a program, so that the whole process is convenient and quick.

Drawings

Fig. 1 is a flowchart of a method for improving performance of a gate tube device according to an embodiment of the present invention;

fig. 2 is a schematic diagram of an NbOx gate device according to an embodiment of the present invention;

FIG. 3 is a block diagram of a system for improving the performance of a gatekeeper, according to an embodiment of the present invention;

fig. 4 is a block diagram of an electronic device provided by an embodiment of the invention.

Detailed Description

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. It is to be understood that such description is merely illustrative and not intended to limit the scope of the present invention. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the invention. It may be evident, however, that one or more embodiments may be practiced without these specific details. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The terms "comprises," "comprising," and the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.

Referring to fig. 1, an embodiment of the present invention provides a method for improving performance of a gate tube device, where the method includes steps S1 to S5:

in step S1, the operating voltage and the limiting current for the dc operation of the gate device are determined.

Specifically, under direct current, acquiring minimum operating voltage, maximum limiting current and minimum limiting current which enable a gate tube device to have a switching phenomenon; determining the operating voltage of the gating device during the direct current operation to be 0.5v-1v greater than the minimum operating voltage, and determining the limiting current of the gating device during the direct current operation to be 2-5 times of the minimum limiting current.

Step S2, the operating voltage and the limiting current are applied to the gate device, and the gate device is cycled under direct current until the off-state leakage current decreases.

In this step, the criterion for the decrease of the off-state leakage current is that the current off-state leakage current value is smaller than the initial off-state leakage current value, which indicates that the off-state leakage current decreases.

Step S3, continuing to apply the operating voltage and the limiting current to the gate tube device, and circulating the gate tube device under the direct current until the off-state leakage current is reduced to the minimum value; and acquiring a first operating voltage and a first limiting current corresponding to the minimum value of the off-state leakage current, and acquiring an operating voltage interval and a limiting current interval by taking the first operating voltage and the first limiting current as centers.

In this step, the judgment basis for reducing the off-state leakage current to the minimum value is that the values of the off-state leakage currents are all smaller than the values of the first N off-state leakage currents, and the values of the off-state leakage currents are all smaller than the values of the last M off-state leakage currents, wherein N is greater than or equal to 1, and M is greater than or equal to 1.

And step S4, applying a second operating voltage and a second limiting current within the operating voltage interval and the limiting current interval to the gate tube device to perform direct current operation or pulse operation.

It should be noted that the operation voltages applied to the gate devices in the above steps S1-S4 are all operation voltages in the same direction.

And step S5, determining the reverse operation voltage of the gate tube device, and applying the reverse operation voltage to the gate tube device to enable the gate tube device to have a reset phenomenon.

In this step, said determining a reverse operating voltage of the gating device comprises: performing a current-unlimited operation on the gate transistor device in a voltage direction opposite to the voltage direction of step S2 to obtain a minimum reverse operation voltage and a maximum reverse operation voltage for causing the gate transistor device to have a reset phenomenon; determining a reverse operation voltage of the gating device to be 0-1v greater than the minimum reverse operation voltage and less than the maximum reverse operation voltage.

Thus, the invention is provided by the reaction of NbO_xAfter the gating device performs direct current circulation, an operating voltage interval and a limiting current interval when the leakage current is reduced to the minimum value are obtained, and then required target operation is performed in the interval, so that the leakage current generated by the target operation can be reduced. Then to NbO_xAnd the gating device carries out reverse reset, and the steps S1-S3 can be repeated when the gating device is used next time to find the situation that the leakage current is reduced to the minimum value, so that the operation voltage interval and the limiting current interval corresponding to the situation that the leakage current is reduced to the minimum value are updated. In the practical use process, NbO is subjected to first time_xWhen the gating device performs the DC operation or the pulse operation, the steps S1-S4 can be performed in sequence, and the next time NbO is performed_xWhen the gate device performs the dc operation or the pulse operation, the step S5 may be executed first, and then the steps S1-S4 are executed in sequence, and the process is repeated.

It should be noted that the contents of the above steps S1-S5 can be applied to NbO_xA gating device. As shown in FIG. 2, the NbO_xThe gating device comprises a top layer electrode 1 and a bottom layer electrode in sequence from top to bottom,A dielectric layer 2, a bottom electrode 3 and a substrate layer 4. The NbOx gate tube device can be prepared by the following steps:

first, in SiO₂On the/Si substrate, TiN with a thickness of 20nm was deposited by ion beam sputtering.

And secondly, obtaining a bottom electrode TiN through a photoetching technology.

Thirdly, carrying out magnetron sputtering on Ar and O₂Striking a target material with Nb and O being 1 to 1 in the environment, controlling the oxygen introduction amount to be 0.8sccm, and depositing an NbOx dielectric layer on the bottom layer electrode TiN, wherein the thickness of the NbOx layer is 60 nm.

Fourthly, the magnetron sputtering technology is used for preparing NbO_xAnd depositing a top electrode Pt on the layer, wherein the thickness of the top electrode Pt is 40 nm.

Another embodiment of the present invention provides a system for improving the performance of a gated pipe device, and referring to fig. 3, the system 300 includes: an operating voltage and limiting current determination module 301 for determining an operating voltage and a limiting current at the time of a dc operation of the gate device; a first execution module 302, configured to apply the operating voltage and the limiting current to the gate device, so that the gate device is cycled under a direct current until an off-state leakage current is reduced; an operation voltage interval and limiting current interval obtaining module 303, configured to continue to apply the operation voltage and limiting current to the gate transistor device, so that the gate transistor device is cycled under a direct current until an off-state leakage current is reduced to a minimum value; acquiring a first operating voltage and a first limiting current corresponding to the minimum value of the off-state leakage current, and acquiring an operating voltage interval and a limiting current interval by taking the first operating voltage and the first limiting current as centers; a second execution module 304, configured to apply a second operating voltage and a second limiting current within the operating voltage interval and the limiting current interval to the gate transistor device to perform a dc operation or a pulse operation; the reset module 305 is configured to determine a reverse operation voltage of the gate device, and apply the reverse operation voltage to the gate device to reset the gate device.

Any number of modules, sub-modules, units, sub-units, or at least part of the functionality of any number thereof according to embodiments of the invention may be implemented in one module. Any one or more of the modules, sub-modules, units, and sub-units according to the embodiments of the present invention may be implemented by being divided into a plurality of modules.

Fig. 4 schematically shows a block diagram of an electronic device according to an embodiment of the invention.

As shown in fig. 4, the electronic device 400 includes a processor 401 and a memory 402. The electronic device 400 may perform a method according to an embodiment of the invention.

In particular, processor 401 may comprise, for example, a general purpose microprocessor, an instruction set processor and/or an associated chipset, and/or a special purpose microprocessor (e.g., an Application Specific Integrated Circuit (ASIC)), or the like. The processor 401 may also include onboard memory for caching purposes. Processor 401 may be a single processing unit or a plurality of processing units for performing the different actions of the method flows according to embodiments of the present invention.

The memory 402, for example, can be any medium that can contain, store, communicate, propagate, or transport the instructions. For example, a readable storage medium may include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, device, or propagation medium. Specific examples of the readable storage medium include: magnetic storage devices, such as magnetic tape or Hard Disk Drives (HDDs); optical storage devices, such as compact disks (CD-ROMs); a memory, such as a Random Access Memory (RAM) or a flash memory; and/or wired/wireless communication links. Which stores a computer executable program which, when executed by the processor, causes the processor to perform the method as described above.

The present invention also provides a computer-readable medium, which may be embodied in the apparatus/device/system described in the above embodiments; or may exist separately and not be assembled into the device/apparatus/system. The computer readable medium carries one or more programs which, when executed, implement the above-described method according to an embodiment of the present invention.

According to embodiments of the present invention, a computer readable medium may be a computer readable signal medium or a computer readable storage medium or any combination of the two. A computer readable storage medium may be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination of the foregoing. More specific examples of the computer readable storage medium may include, but are not limited to: an electrical connection having one or more wires, a portable computer diskette, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing. In the present invention, a computer readable storage medium may be any tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device. In the present invention, however, a computer readable signal medium may include a propagated data signal with computer readable program code embodied therein, for example, in baseband or as part of a carrier wave. Such a propagated data signal may take many forms, including, but not limited to, electro-magnetic, optical, or any suitable combination thereof. A computer readable signal medium may also be any computer readable medium that is not a computer readable storage medium and that can communicate, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device. Program code embodied on a computer readable medium may be transmitted using any appropriate medium, including but not limited to: wireless, wired, optical fiber cable, radio frequency signals, etc., or any suitable combination of the foregoing.

It will be appreciated by a person skilled in the art that various combinations and/or combinations of features described in the various embodiments and/or in the claims of the invention are possible, even if such combinations or combinations are not explicitly described in the invention. In particular, various combinations and/or combinations of the features recited in the various embodiments and/or claims of the present invention may be made without departing from the spirit or teaching of the invention. All such combinations and/or associations fall within the scope of the present invention.

While the invention has been shown and described with reference to certain exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims and their equivalents. Accordingly, the scope of the present invention should not be limited to the above-described embodiments, but should be defined not only by the appended claims, but also by equivalents thereof.