Electronic integrated device and manufacturing method thereof
阅读说明：本技术 一种电子集成器件及其制作方法 (Electronic integrated device and manufacturing method thereof ) 是由 谢梦兰 庞惠卿 高亮 于 2020-06-30 设计创作，主要内容包括：公开了一种电子集成器件,包含：第一和第二基板、薄膜光伏器件(TFPV)和有机电致发光器件(OLED)；TFPV和OLED分别设置在第一和第二基板上,TFPV包含第一和第二电极,第一电极和第一基板的接触面为第一表面,第二电极设置在第一电极上；OLED包含第三和第四电极,第三电极和第二基板的接触面为第二表面,第四电极设置在第三电极上；第一和第二基板物理连接；第一电极到第二电极的方向与第三电极到第四电极的方向的夹角小于90°,第一和第二表面的垂直投影面积完全不重合；第一和第三电极之间的最小横向距离不大于5mm。TFPV不仅能吸收环境光,还能吸收OLED发出的光,并将其转换成电能实现光能的回收利用。(Disclosed is an electronic integrated device comprising: first and second substrates, a thin film photovoltaic device (TFPV), and an organic electroluminescent device (OLED); the TFPV and the OLED are respectively arranged on the first substrate and the second substrate, the TFPV comprises a first electrode and a second electrode, the contact surface of the first electrode and the first substrate is a first surface, and the second electrode is arranged on the first electrode; the OLED comprises a third electrode and a fourth electrode, the contact surface of the third electrode and the second substrate is a second surface, and the fourth electrode is arranged on the third electrode; the first and second substrates are physically connected; the included angle between the direction from the first electrode to the second electrode and the direction from the third electrode to the fourth electrode is less than 90 degrees, and the vertical projection areas of the first surface and the second surface are not coincident completely; the minimum lateral distance between the first and third electrodes is not more than 5 mm. The TFPV can absorb ambient light and light emitted by the OLED and convert the light into electric energy to recycle the light energy.)
1. An electronic integrated device, comprising: a first substrate, a second substrate, at least one thin film photovoltaic device (TFPV), and at least one organic electroluminescent device (OLED);
at least one TFPV is arranged on the first substrate, the TFPV comprises a first electrode and a second electrode, the first electrode is in direct contact with the first substrate, the contact surface of the first electrode and the first substrate is a first surface, and the second electrode is arranged on the first electrode;
the OLED comprises a third electrode and a fourth electrode, the third electrode is in direct contact with the second substrate, the contact surface of the third electrode is a second surface, and the fourth electrode is arranged on the third electrode;
the first substrate and the second substrate are physically connected;
an included angle formed by the direction from the first electrode to the second electrode and the direction from the third electrode to the fourth electrode is smaller than 90 degrees, and the vertical projection areas of the first surface and the second surface are not overlapped completely;
the minimum lateral distance between the first electrode and the third electrode is no greater than 5 mm.
2. The electronic integrated device of claim 1, wherein the first electrode and the third electrode are both anodes and the second electrode and the fourth electrode are both cathodes.
3. The electronic integrated device according to claim 1 or 2, wherein the first electrode and the third electrode are selected from ITO, IZO, metal oxides, graphene/carbon nanotube composite films, or a combination thereof, the same or different; the second and fourth electrodes are selected from Al, Ag, Mg, Yb, MoOx, or combinations thereof, the same or different.
4. The electronic integrated device of claim 1, wherein the first substrate and the second substrate are physically connected to form a continuous, same substrate.
5. The electronic integrated device according to claim 4, wherein the first electrode and the third electrode are continuous, and/or the second electrode and the fourth electrode are continuous.
6. An electronic integrated device as claimed in claim 1, further comprising an adhesive disposed between said first substrate and said second substrate, said first substrate and said second substrate being physically connected by said adhesive, said adhesive having a refractive index of between 1.2 and 2.4 when cured;
preferably, the difference between the refractive index of the adhesive glue after curing and the refractive index of at least one of the first substrate and the second substrate is within a range of ± 10%.
7. The electronic integrated device of claim 1, wherein the first surface and the second surface are the same height or the first surface is at least 80nm higher than the second surface.
8. The electronic integrated device according to claim 1, wherein the first substrate and the second substrate are transparent substrates.
9. The electronic integrated device of claim 1, further comprising an energy storage device electrically connected to the TFPV and/or the OLED.
10. The electronic integrated device of claim 1, further comprising an external electrical drive.
11. The electronically integrated device of claim 1, wherein the TFPV and OLED further comprise an encapsulation layer, and the encapsulation layer of the TFPV and the encapsulation layer of the OLED are continuous or separate.
12. The electronically integrated device of claim 1, wherein the TFPV comprises one or more of a perovskite thin film photovoltaic, an organic thin film photovoltaic, a copper indium gallium selenide thin film solar cell, a cadmium telluride thin film solar cell, an amorphous silicon photovoltaic device, a dye sensitized photovoltaic device.
13. The electronically integrated device of claim 1, wherein the TFPV surrounds the OLED device in a circular layout.
14. The electronic integrated device of claim 1, wherein the first electrode and the third electrode each comprise a long side and a short side, and the long side of the first electrode is not adjacent to the short side of the third electrode;
preferably, when the ratio of the long side to the short side of the third electrode is greater than 5:1, the long side of the first electrode is not adjacent to the short side of the third electrode.
15. An electronic integrated device as claimed in claim 1 or 14, characterized in that the side length of the shortest side of the first electrode is 2mm or more.
16. The electronic integrated device of claim 1, further comprising an insulating dielectric layer disposed between the TFPV and the OLED, the insulating dielectric layer having a refractive index within ± 5% of a refractive index of at least one of the first electrode, the third electrode, and the substrate.
17. An electronic integrated device as claimed in claim 16, wherein said insulating dielectric layer has a refractive index of between 1.2 and 2.4;
preferably, the refractive index of the insulating medium layer is between 1.5 and 2.2;
more preferably, the refractive index of the insulating medium layer is between 1.8 and 2.0.
18. An electronic integrated device according to claim 1, wherein the minimum lateral distance between the first electrode and the third electrode is not more than 3 mm;
preferably, the minimum lateral distance between the first electrode and the third electrode is no more than 1 mm.
19. A method of making an electronic integrated device, comprising:
providing a first substrate;
providing a first electrode on one side of the first substrate; the contact surface of the first electrode and the first substrate forms a first surface;
providing a second substrate;
a third electrode is arranged on one side of the second substrate, and the contact surface of the third electrode and the second substrate forms a second surface;
the first substrate and the second substrate are connected through physical connection;
a second electrode is arranged on the first electrode, and a light absorption layer of the TFPV device is arranged between the first electrode and the second electrode;
a fourth electrode is arranged on the third electrode, and a light emitting layer of the OLED device is arranged between the third electrode and the fourth electrode;
an included angle formed by the direction from the first electrode to the second electrode and the direction from the third electrode to the fourth electrode is smaller than 90 degrees, and the vertical projections of the first plane and the second plane are not coincident;
the minimum lateral distance between the first electrode and the third electrode is no greater than 5 mm.
20. The method of manufacturing an electronic integrated device according to claim 19, wherein the first electrode and the third electrode are anodes, and the second electrode and the fourth electrode are cathodes.
21. The method of manufacturing an electronic integrated device according to claim 19, wherein the first substrate and the second substrate are physically connected to form a continuous same substrate.
22. The method of manufacturing an electronic integrated device according to claim 21, wherein the first electrode and the third electrode are continuous, or the second electrode and the fourth electrode are continuous.
23. The method for manufacturing an electronic integrated device according to claim 19, further providing an adhesive paste, wherein the first substrate and the second substrate are physically connected by the adhesive paste, and the refractive index of the adhesive paste after curing is within a range of ± 10% of the refractive index of at least one of the first substrate and the second substrate.
24. The method for manufacturing an electronic integrated device according to claim 19, wherein the first electrode and the third electrode are simultaneously manufactured, and/or the second electrode and the fourth electrode are simultaneously manufactured.
25. The method of claim 19 wherein said TFPV is in a ring layout around the outside of the OLED.
26. The method of manufacturing an electronic integrated device according to claim 19, further providing an insulating dielectric layer disposed between the TFPV and the OLED.
27. The method for manufacturing an electronic integrated device according to claim 19, wherein the first surface and the second surface have the same height, or the first surface is higher than the second surface by at least 80 nm.
Technical Field
The invention relates to an electronic integrated device and a manufacturing method thereof. And more particularly, to an electronic integrated device integrating a thin film photovoltaic device and an organic electroluminescent device, and a method of fabricating the electronic integrated device.
Background
An organic electroluminescent device (OLED) is formed by stacking a cathode, an anode, and organic layers between the cathode and the anode, converts electrical energy into optical energy by applying a voltage across the cathode and the anode of the device, and has advantages of wide angle, high contrast, and faster response time. During the last decades, researchers have conducted a great deal of research to obtain efficient devices, and OLED devices using phosphorescence have achieved nearly 100% Internal Quantum Efficiency (IQE). However, due to the refractive index mismatch between the different film layers, a large amount of light is totally reflected or absorbed at the interface, resulting in an External Quantum Efficiency (EQE) of a typical OLED of only between 20% -30%. Jinouk Song et al reported that the loss of light inside the device can be generalized to the following modes due to the multi-layer structure of the OLED: "substrate mode" means that total reflection is confined within the substrate due to the refractive index of air (1.0) being less than the refractive index of the substrate (glass 1.5) during the escape of light from the thin film OLED into the air, and the substrate mode light occupies about 30% of the total number of radiation photons of the organic layer. "waveguide mode" means that the light emitted from the light-emitting layer of the OLED reaches the interface of the transparent electrode and the substrate, and total reflection is confined in the organic thin film due to the refractive index of the substrate (glass 1.5) being generally smaller than that of the transparent electrode (ITO 2.0), and the light of the waveguide mode accounts for about 30% of the total number of radiation photons of the organic layer. In addition, there is a loss of light in the plasma mode at the interface of the organic layer and the metal cathode layer. Therefore, it has been a concern of researchers how to extract the light energy trapped inside the OLED device.
Solar cells or photovoltaic cells are devices that convert light energy (especially solar radiation) into electrical energy by the photovoltaic effect of a material. In recent years, thin film photovoltaic devices (TFPV), such as organic solar devices (OPV), have been rapidly developed due to their advantages of high efficiency, low cost, easy preparation, etc., and their external quantum efficiency can reach 18%; the photoelectric conversion efficiency of the perovskite solar device is rapidly improved since the report, the external quantum efficiency of the current laboratory device reaches 24.2 percent, and the perovskite solar device can be comparable to the commercialized silicon-based solar cell technology. Thin film photovoltaic devices, which can efficiently convert low intensity light in an indoor environment into megawatt to microwatt power, are recognized as ideal options for driving low power devices. The indoor organic solar device developed by Yong Cui and the like can generate electricity in rooms such as living rooms, offices and libraries, and the OPV device is irradiated by an LED lamp (1000 illuminance), so that the conversion efficiency is higher by 26%. Compared with an inorganic LED, the OLED has wide spectrum, can emit light at 380nm-1000nm, can convert absorbed OLED light into electric energy by utilizing the light absorption characteristic of a TFPV device to realize the recycling of light energy, and has great significance for energy conservation and environmental protection.
The OLED and TFPV devices generally use glass or other transparent materials as a substrate, and also include transparent conductive oxides such as ITO as an anode, and other functional layers are usually formed by vacuum thermal evaporation or solution spray printing. Therefore, the two types of devices have strong compatibility in materials and preparation processes. There are some prior art disclosing methods of manufacturing, lighting devices or display devices combining OPV and OLED devices.
CN106058052A discloses an integrated system based on thin film power generation, energy storage and light emission, which combines an OPV device, an OLED device and a super capacitor, and the invention is intended to actually convert solar energy into electric energy by using OPV to drive the OLED device to emit light or serve as a power supply device. In addition, the application emphasizes that the OLED device and the OPV device are fabricated on the same plane of the same substrate, and makes clear mention of the role of OPV in converting solar energy into electrical energy, while defining the photovoltaic device as OPV.
US10453904B2 discloses an active matrix display device, which employs a multi-layer longitudinal stack structure, in which an OLED device and an OPV device are respectively disposed on two substrates, a semi-transparent OLED device is vertically disposed on the OPV device, and an air gap exists between the OLED device and the OPV device, such a device arrangement way that the OPV can only absorb light emitted from the OLED, but cannot utilize light that may be lost inside the OLED. Meanwhile, the OLED device therein is double-sided light emitting, resulting in a great reduction in its light emitting efficiency.
CN105307304A discloses an OPV-driven OLED light source and a method for manufacturing the same, wherein the OPV collects sunlight, converts light energy into electric energy through a controller, supplies power to the OLED, and stores the electric energy into an OPV controller and a memory, and the stored energy can be released again to drive the OLED, thereby realizing that the OPV drives the OLED light source to emit light. However, in this patent application, the OPV and the OLED module are connected by a common electrode layer, and together form two parts of a device, which is a stacked device structure. US20190006425a1 discloses a lighting assembly that combines the use of an OLED and an OPV, wherein each OLED pixel is combined with an OPV device, also in a multi-layer longitudinal stack, the OPV and OLED being electrically connected, the OPV absorbing solar energy to generate electrical power to power the OLED. The preparation method, the lighting device or the display panel all adopt a superposed structure of the OPV and the OLED, solar energy or ambient light is converted into electric energy by using the OPV and the electric energy is supplied to the OLED, but the superposed structure has complex process and high cost, and the OPV does not utilize light possibly lost in an OLED device.
US20140225090a1 discloses an OLED display device having a solar cell device disposed in an area defined by boundaries between pixel points and pixel points of the OLED, but the solar cell device is disposed either below an opaque electrode of the OLED device, the opaque electrode of the OLED device being spaced from the electrode of the solar cell device by an insulating layer; or the opaque electrode (bottom electrode) of the OLED device and one electrode of the solar cell are on the same horizontal plane, but the subsequent functional layers are respectively prepared in opposite directions on the horizontal plane, so that the solar cell device can only absorb external ambient light and cannot utilize light emitted by the OLED due to the arrangement positions of the OLED device and the solar cell in the two cases. The solar cell can also be arranged above the OLED device, but actually is arranged above the packaging sheet on the light-emitting side of the prepared OLED device, and the arrangement of the device structure ensures that the light of the OLED can be emitted only after passing through the solar cell device, so most of the light is lost in the solar cell device, therefore, the invention aims to arrange some solar cell devices among OLED pixel points to absorb sunlight or ambient light, and supply power to the OLED if necessary to realize the effective utilization of energy.
Takayuki Chiba et Al report a dual-mode OLED-OPV device, which adopts a longitudinal superposition structure, the bottom of the device is an OPV device, an OLED device is arranged on the OPV device, the OPV and the OLED device are connected through a layer of thin metal Ag/Ag: Al, and the top of the OLED is provided with a semitransparent electrode Mg: Ag. The OPV is also used to convert solar energy into electrical energy to power the OLED, so the device structure and the function to be realized are different from the present invention.
On the basis of the above, the present invention provides an electronic integrated device integrating a thin film photovoltaic device and an organic electroluminescent device through intensive research by the inventors.
Disclosure of Invention
In view of the above problems, the present invention is directed to an electronic integrated device integrating a thin film photovoltaic device and an organic electroluminescent device.
According to an embodiment of the present invention, there is disclosed an electronic integrated device characterized by including: a first substrate, a second substrate, at least one thin film photovoltaic device (TFPV), and at least one organic electroluminescent device (OLED);
at least one TFPV is arranged on the first substrate, the TFPV comprises a first electrode and a second electrode, the first electrode is in direct contact with the first substrate, the contact surface of the first electrode and the first substrate is a first surface, and the second electrode is arranged on the first electrode;
the OLED comprises a third electrode and a fourth electrode, the third electrode is in direct contact with the second substrate, the contact surface of the third electrode is a second surface, and the fourth electrode is arranged on the third electrode;
the first substrate and the second substrate are physically connected;
an included angle formed by the direction from the first electrode to the second electrode and the direction from the third electrode to the fourth electrode is smaller than 90 degrees, and the vertical projection areas of the first surface and the second surface are not overlapped completely;
the minimum lateral distance between the first electrode and the third electrode is no greater than 5 mm.
According to an embodiment of the present invention, there is disclosed a method for manufacturing an electronic integrated device, including:
providing a first substrate;
providing a first electrode on one side of the first substrate; the contact surface of the first electrode and the first substrate forms a first surface;
providing a second substrate;
a third electrode is arranged on one side of the second substrate, and the contact surface of the third electrode and the second substrate forms a second surface;
the first substrate and the second substrate are connected by a physical connection;
a second electrode is arranged on the first electrode, and a light absorption layer of the TFPV device is arranged between the first electrode and the second electrode;
a fourth electrode is arranged on the third electrode, and a light emitting layer of the OLED device is arranged between the third electrode and the fourth electrode;
an included angle formed by the direction from the first electrode to the second electrode and the direction from the third electrode to the fourth electrode is smaller than 90 degrees, and the vertical projections of the first plane and the second plane are not coincident;
the minimum lateral distance between the first electrode and the third electrode is no greater than 5 mm.
The invention provides an electronic integrated device integrating a TFPV (pulse width modulation) device and an OLED (organic light emitting diode), which is characterized in that a thin film photovoltaic device effectively absorbs light in a substrate mode and a waveguide mode inside the OLED and converts the light into electric energy to realize the recycling of the light energy by designing the plane layout relationship of the TFPV device and the OLED device. The thin film photovoltaic device in the electronic integrated device structure of the invention can not only absorb ambient light, including but not limited to sunlight, but also absorb light in an OLED waveguide mode and a substrate mode.
Drawings
Fig. 1a-1c are schematic diagrams of a typical OLED device and an optical waveguide.
Fig. 2a-2d are top and cross-sectional views of an electronic integrated device in accordance with the present invention.
Fig. 3a-3c are top views of an electronic integrated device in accordance with the present invention.
Fig. 4a-4c are top and cross-sectional views of another electronic integrated device in accordance with the present invention.
FIGS. 5a-5b are schematic diagrams of an electronic integrated device that can be combined in the present invention.
Fig. 6 is a circuit control schematic diagram of the electronic integrated device of the present invention.
Detailed Description
As used herein, "top" means furthest from the substrate, and "bottom" means closest to the substrate. In the case where the first layer is described as being "disposed on" the second layer, the first layer is disposed closer to the substrate. Conversely, where a first layer is described as being "disposed" under a second layer, the first layer is disposed closer to the substrate. Other layers may be present between the first and second layers, unless it is specified that the first layer is "in contact with" the second layer. For example, a cathode can be described as being "disposed on" an anode even though various organic layers are present between the cathode and the anode.
As used herein, "physically joined" refers to joining two parts together by adhering with an adhesive, direct contact, melting to form a unified system, and the like. For example, the first substrate and the second substrate may be combined together by, but are not limited to, bonding with an adhesive, direct contact, melting to form a unified system, and the like. The physical connection referred to in the present invention does not include a connection method using only electrical connection but does not constitute the above-described contact, but may include a method of further including electrical connection in addition to the above-described contact method. The same substrate can also be considered to be composed of the first substrate and the second substrate through physical connection.
As used herein, the term "the vertically projected areas are completely misaligned" refers to the shadow areas created assuming parallel light strikes the top of the first or second surface vertically are completely misaligned.
As used herein, "direction of a first electrode to a second electrode" refers to assuming that a point is selected as a starting point at the first electrode, from which a ray is drawn perpendicular to the first electrode and directed toward the second electrode, the direction of the ray indicating the direction of the first electrode to the second electrode; likewise, the term "direction of the third electrode to the fourth electrode" refers to assuming that a point is selected as a starting point at the third electrode, from which a ray is drawn perpendicular to the third electrode and directed towards the fourth electrode, the direction of the ray indicating the direction of the third electrode to the fourth electrode.
As used herein, the term "OLED device" includes an anode layer, a cathode layer, one or more organic layers disposed between the anode layer and the cathode layer. An "OLED device" may be bottom emitting, i.e. emitting light from the anode layer side, or top emitting, i.e. emitting light from the cathode layer side, or a transparent device, i.e. emitting light from both the anode layer and the cathode layer.
As used herein, the term "Thin-film photovoltaic device" or "Thin-film photovoltaicaic (TFPV)" refers to a photovoltaic device in the form of a Thin film, including, but not limited to, perovskite photovoltaic devices, organic photovoltaic devices (OPVs), dye-sensitized photovoltaic devices, Thin-film silicon-based photovoltaic devices, copper indium gallium selenide Thin-film solar cells, cadmium telluride Thin-film solar cells, amorphous silicon photovoltaic devices, and the like.
As used herein, the term "energy storage device" refers to a device that can store electrical energy, including, but not limited to, capacitors, batteries, lithium batteries, and the like.
As used herein, the term "substrate mode" of light refers to the fact that when light emitted from the light-emitting layer of an OLED device reaches the substrate-air interface, total reflection is confined within the substrate due to the refractive index of air (1.0) being generally less than the refractive index of the substrate (glass 1.5).
As used herein, the term "waveguide mode" light refers to light emitted from the light emitting layer of an OLED device that reaches the interface of the transparent electrode and the substrate, with total reflection confined in the organic thin film due to the substrate's index of refraction (glass 1.5) typically being less than the transparent electrode (ITO 2.0).
As used herein, the term "continuous" refers to physical connections between the film layers, rather than being independent, i.e., any two points in the film layers between which at least one path may exist and all points in the path fall within the film layer.
As used herein, the term "external electrically driven device" may be a power plug, but may also be other devices capable of providing power, such as a battery, a USB interface (e.g., USB fabric, Micro-USB interface, Type-C interface, etc.), a wireless charging device (e.g., an electromagnetic induction charging device, a magnetic resonance charging device, a radio frequency wireless charging device, etc.). The "external electric drive device" may further comprise a circuit control device including a CPU, a microprocessor, a chip, an FPC board, a memory.
As used herein, the term "minimum lateral distance" refers to the minimum lateral distance that is the minimum length of a line segment formed by the perpendicular projection of the line connecting two points, at each selected point on the adjacent sides of the first electrode and the third electrode.
According to an embodiment of the present invention, there is disclosed an electronic integrated device characterized by including: a first substrate, a second substrate, at least one thin film photovoltaic device (TFPV), and at least one organic electroluminescent device (OLED);
at least one TFPV is arranged on the first substrate, the TFPV comprises a first electrode and a second electrode, the first electrode is in direct contact with the first substrate, the contact surface of the first electrode and the first substrate is a first surface, and the second electrode is arranged on the first electrode;
the OLED comprises a third electrode and a fourth electrode, the third electrode is in direct contact with the second substrate, the contact surface of the third electrode is a second surface, and the fourth electrode is arranged on the third electrode;
the first substrate and the second substrate are physically connected;
an included angle formed by the direction from the first electrode to the second electrode and the direction from the third electrode to the fourth electrode is smaller than 90 degrees, and the vertical projection areas of the first surface and the second surface are not overlapped completely;
the minimum lateral distance between the first electrode and the third electrode is no greater than 5 mm.
According to an embodiment of the invention, the first and third electrodes are both anodes and the second and fourth electrodes are both cathodes.
According to an embodiment of the present invention, the first electrode and the third electrode are identically or differently selected from ITO, IZO, metal oxide, graphene/carbon nanotube composite film, or a combination thereof.
According to an embodiment of the invention, the second and fourth electrodes are selected from Al, Ag, Mg, Yb, MoOx, or a combination thereof, the same or different.
According to one embodiment of the invention, the first substrate and the second substrate are connected by physical connection to form a continuous same substrate.
According to an embodiment of the invention, the first and third electrodes are continuous, or the second and fourth electrodes are continuous.
According to one embodiment of the present invention, the electronic integrated device further comprises an adhesive paste disposed between the first substrate and the second substrate.
According to one embodiment of the invention, the refractive index of the adhesive glue after curing is between 1.2 and 2.4.
According to one embodiment of the present invention, the difference between the refractive index of the adhesive glue after curing and the refractive index of at least one of the first substrate and the second substrate is within ± 10%.
According to one embodiment of the invention, the first substrate and the second substrate are physically connected by an adhesive glue.
According to one embodiment of the invention, the first surface and the second surface are of the same height.
According to one embodiment of the invention, the first surface is at least 80nm higher than the second surface.
According to one embodiment of the invention, the first and second substrates are transparent substrates.
According to one embodiment of the present invention, the electronic integrated device further comprises an energy storage device electrically connected to the TFPV and/or the OLED.
According to one embodiment of the present invention, the energy storage device includes, but is not limited to, a capacitor, a battery, a lithium battery, and the like.
According to one embodiment of the invention, the electronic integrated device further comprises an external electric drive.
According to an embodiment of the present invention, the external electric drive may be a power plug, or may be other devices capable of providing power, such as a battery, a USB interface (e.g., USB fabric, Micro-USB interface, Type-C interface, etc.), a wireless charging device (e.g., an electromagnetic induction charging device, a magnetic resonance charging device, a radio frequency wireless charging device, etc.).
According to one embodiment of the invention, the external electrically driven device further comprises a circuit control device.
According to one embodiment of the invention, the circuit control device comprises one or more of a CPU, a microprocessor, a chip, an FPC circuit board and a memory.
According to one embodiment of the invention, the TFPV and OLED further comprise an encapsulation layer, and the encapsulation layer of the TFPV and the encapsulation layer of the OLED are continuous or independent.
According to one embodiment of the invention, the TFPV comprises one or more of a perovskite thin film photovoltaic, an organic thin film photovoltaic device, a copper indium gallium selenide thin film solar cell, a cadmium telluride thin film solar cell, an amorphous silicon photovoltaic device, a dye sensitized photovoltaic device.
According to one embodiment of the invention, the TFPV surrounds the OLED device in a ring layout.
According to an embodiment of the invention, the first electrode and the third electrode each comprise a long side and a short side.
According to one embodiment of the present invention, the first electrode and the third electrode each include a long side and a short side, and the long side of the first electrode is not adjacent to the short side of the third electrode.
According to an embodiment of the invention, the long side of the first electrode is not adjacent to the short side of the third electrode when the ratio of the long side to the short side of the third electrode is larger than 5: 1.
According to an embodiment of the invention, the length of the side of the shortest side of the first electrode is 2mm or more.
According to one embodiment of the invention, the thin film transistor further comprises an insulating dielectric layer disposed between the TFPV and the OLED.
According to an embodiment of the present invention, a difference between a refractive index of the insulating medium layer and a refractive index of at least one of the first electrode, the third electrode, and the substrate is within ± 5%.
According to one embodiment of the invention, the refractive index of the insulating medium layer is between 1.2 and 2.4.
According to one embodiment of the invention, the refractive index of the insulating medium layer is between 1.5 and 2.2.
According to one embodiment of the invention, the refractive index of the insulating medium layer is between 1.8 and 2.0.
According to an embodiment of the invention, the minimum lateral distance between the first electrode and the third electrode is not more than 5 mm.
According to an embodiment of the invention, the minimum lateral distance between the first electrode and the third electrode is not more than 3 mm.
According to an embodiment of the invention, the minimum lateral distance between the first electrode and the third electrode is not more than 1 mm.
According to an embodiment of the present invention, there is also disclosed a method for manufacturing an electronic integrated device, including:
providing a first substrate;
arranging a first electrode on one side of the first substrate, wherein the contact surface of the first electrode and the first substrate forms a first surface;
providing a second substrate;
a third electrode is arranged on one side of the second substrate, and the contact surface of the third electrode and the second substrate forms a second surface;
the first substrate and the second substrate are connected through physical connection;
a second electrode is arranged on the first electrode, and a light absorption layer of the TFPV device is arranged between the first electrode and the second electrode;
a fourth electrode is arranged on the third electrode, and a light emitting layer of the OLED device is arranged between the third electrode and the fourth electrode;
an included angle formed by the direction from the first electrode to the second electrode and the direction from the third electrode to the fourth electrode is smaller than 90 degrees, and the vertical projections of the first plane and the second plane are not coincident;
the minimum lateral distance between the first electrode and the third electrode is no greater than 5 mm.
According to an embodiment of the present invention, wherein the first electrode and the third electrode are anodes and the second electrode and the fourth electrode are cathodes in the preparation method.
According to an embodiment of the present invention, the first substrate and the second substrate are physically connected to form a continuous substrate.
According to an embodiment of the present invention, wherein the first electrode and the third electrode or the second electrode and the fourth electrode are continuous in the manufacturing method.
According to an embodiment of the present invention, wherein the preparation method further provides an adhesive glue.
According to an embodiment of the present invention, wherein a difference between a refractive index of the adhesive paste after curing and a refractive index of at least one of the first substrate and the second substrate in the preparation method is within a range of ± 10%.
According to an embodiment of the present invention, wherein the first substrate and the second substrate are physically connected by an adhesive glue in the manufacturing method.
According to an embodiment of the invention, wherein the first electrode and the third electrode are prepared simultaneously and/or the second electrode and the fourth electrode are prepared simultaneously in the preparation method.
According to an embodiment of the invention, the TFPV is arranged in a ring layout around the OLED in the manufacturing method.
According to an embodiment of the invention, an insulating medium layer is further provided in the preparation method, and the insulating medium layer is arranged between the TFPV and the OLED.
According to an embodiment of the present invention, wherein the first surface and the second surface have the same height in the manufacturing method.
According to an embodiment of the invention, wherein the first surface is at least 80nm higher than the second surface in the preparation method.
Due to the compatibility of the materials and the manufacturing process, the OLED device and the TFPV device can be easily manufactured on the same substrate, and the same transparent conductive material is used as the anode. Therefore, under the reasonable layout design, the light trapped in the substrate mode and the waveguide mode in the OLED device can be extracted by the thin-film photovoltaic device and further converted into electric energy. If the thin film photovoltaic unit is connected with the energy storage device, the part of electric energy can be stored, and the OLED device can be supplied with power when needed, so that the luminous efficiency is indirectly improved.
FIG. 1 is a schematic diagram of a typical OLED device and optical waveguides. According to classical ray optics theory, only a small fraction of the generated light exits the substrate due to differences in refractive index, etc., between the glass substrate and the ITO/organic material, while the remaining majority of the light is trapped in the glass substrate and the device, either in substrate mode or in waveguide mode. As shown in FIG. 1a, the refractive index n of
α1＝arcsin(nair/nOL)≈33°，α2＝arcsin(nsub/nOL)≈54°。
the light generated by an OLED can be divided into three parts:
1) when the angle is not less than 0 degree and not more than α and not more than α1Assuming that the light emitted by the OLED is isotropic and totally reflected back after reaching the
2) substrate mode when α1≤α≤α2The light is confined in 301, which isThe proportion of
3) ITO/organic mode (waveguide mode) (. α)2α < 90 DEG, the
we have calculated the furthest lateral distance that the light of the substrate mode and waveguide mode of the OLED device can reach. FIG. 1b is a cross-sectional view of an integrated electronic device, 2 showing a TFPV device, 3 showing an OLED device, wherein the TFPV device shares a
When α1≤α≤α2When the light is confined in the
We simulate the optical substrate in which the substrate mode is calculatedThe farthest transverse distance L reached1：
Assume that 1: n issub＝1.5，nOL1.85, substrate thickness d10.7mm, the critical angle of light at the anode and substrate can be calculated as α arcsin (n)sub/nOL) When an incident ray of light at an incident angle α of 54 ° is incident at the boundary between the
assume 2: n issubIs 1.65 (refractive index of flexible film PET), thickness d10.05mm, the farthest distance that the substrate mode light exiting the OLED can reach is 2d1tan[arcsin(nsub/nOL)]＝2*0.05*2.35＝0.24mm；
From the above calculations, it can be seen that the substrate mode light exiting from the OLED can reach the thickness d of the substrate and the light at the farthest lateral distance1Proportional to the refractive index of the substrate and the refractive index of the organic layer, nsub/nOLThe larger the ratio, the farther the light from the OLED reaches, but typically the refractive index of the substrate is between 1.5 and 1.8 and the thickness of the substrate is between 0.05 and 0.7mm, so the calculated farthest lateral distance L that the OLED substrate mode light can reach is calculated1About 2mm, the length of the side length of the actual TFPV device is at least L1-d. Assuming that d is equal to 0, the side length of the TFPV device is set to L1Then the minimum side length of the TFPV device is 2 mm.
In the second case, as shown in FIG. 1c, the OLED device and TFPV device share a common anode, i.e., OLED device anode 31 and TFPV device anode 21 are continuous, and OLED device 3 is still spaced apart from TFPV device 2 by a distance d when incident angle α is measured2α < 90 °, total reflection of light ① at the interface between the anode 31 and the anode 401, confinement of the light in the anode 31 of the OLED device, and d2For anode thickness, incident light rays exit the boundary at the interface of substrate 401 and OLED device anode 31 at incident angle α (α approaches 90 °) andthe light of the waveguide mode exiting from the OLED can then reach the farthest distance L2＝2d2tan α (α approaches 90 °), then theoretically the light can reach infinity, assuming α is 89 ° (a small fraction of light between 89 ° and 90 ° is negligible), the anode thickness d20.12 μm, then L2＝2d2the tan α is 2 × 0.12 × tan89 ° -13.7 μm, 13.7 μm is much smaller than the distance that the light of the substrate mode can reach, and the TFPV device has an optimal side length of (13.7-d) μm, which is much smaller than the maximum distance that the light of the substrate mode can reach.
Based on the above two cases, we consider the TFPV device to have a side length of at least 2 mm. Of course, the longer the side length of the TFPV device, the more ambient light is absorbed, and this portion of the light can be converted into electrical energy to drive the OLED device.
The working principle of the electronic integrated device is specifically described by using several embodiments.
- 上一篇：一种医用注射器针头装配设备
- 下一篇：发光装置