阅读说明：本技术 显示装置和制造该显示装置的方法 (Display device and method of manufacturing the same ) 是由 李世镐 于 2020-03-20 设计创作，主要内容包括：本发明涉及显示装置和制造该显示装置的方法。该显示装置包括：基板；彼此面对的像素电极和对电极；电连接到像素电极的薄膜晶体管；电连接到对电极并且与像素电极间隔开的接触电极；电连接到接触电极并且与薄膜晶体管间隔开的辅助电极；利用其发射光的中间层,中间层包括：发射层,以及与像素电极和接触电极对应的第一功能层,第一功能层限定在其处暴露接触电极的开口部分；以及在薄膜晶体管与像素电极之间、在辅助电极与接触电极之间并且限定在其处辅助电极电连接到接触电极的接触开口的多绝缘层,接触开口与中间层的开口部分对应。(The present invention relates to a display device and a method of manufacturing the same. The display device includes: a substrate; a pixel electrode and a counter electrode facing each other; a thin film transistor electrically connected to the pixel electrode; a contact electrode electrically connected to the counter electrode and spaced apart from the pixel electrode; an auxiliary electrode electrically connected to the contact electrode and spaced apart from the thin film transistor; an intermediate layer with which light is emitted, the intermediate layer comprising: an emission layer, and a first functional layer corresponding to the pixel electrode and the contact electrode, the first functional layer defining an opening portion at which the contact electrode is exposed; and a multi-insulating layer between the thin film transistor and the pixel electrode, between the auxiliary electrode and the contact electrode, and defining a contact opening at which the auxiliary electrode is electrically connected to the contact electrode, the contact opening corresponding to the opening portion of the intermediate layer.)

1. A display device, comprising:

a substrate;

a pixel electrode and a counter electrode facing each other on the substrate;

a pixel circuit including a thin film transistor, the pixel circuit being electrically connected to the pixel electrode at the thin film transistor;

a contact electrode electrically connected to the counter electrode and through which an electrical signal is transmitted to the counter electrode, the contact electrode and the pixel electrode being spaced apart from each other along the substrate;

an auxiliary electrode electrically connected to the contact electrode and through which the electric signal is transmitted to the contact electrode, the auxiliary electrode and the thin film transistor being spaced apart from each other along the substrate;

an intermediate layer with which light is emitted, the intermediate layer comprising: an emission layer corresponding to the pixel electrode, and a first functional layer corresponding to the pixel electrode and the contact electrode, the first functional layer defining an opening portion at which the contact electrode is exposed to the outside of the intermediate layer; and

a multi-insulating layer between the thin film transistor and the pixel electrode and between the auxiliary electrode and the contact electrode, the multi-insulating layer defining a contact opening at which the auxiliary electrode is electrically connected to the contact electrode, the contact opening corresponding to the opening portion of the intermediate layer.

2. The display device according to claim 1,

the opening portion of the intermediate layer includes a first opening and a second opening spaced apart from each other along the substrate, the first opening being closer to the pixel electrode than the second opening; and is

The counter electrode is electrically connected to the contact electrode at the first opening and the second opening.

3. The display device according to claim 2,

the multiple insulating layers include an inorganic insulating layer and an organic insulating layer farther from the substrate than the inorganic insulating layer, and

in a region corresponding to the first opening, the organic insulating layer defines an open portion at which the counter electrode is electrically connected to the contact electrode.

4. The display device according to claim 3, wherein the inorganic insulating layer is between the contact electrode and the auxiliary electrode in the region corresponding to the first opening.

5. The display device according to claim 3, wherein, in a region corresponding to the second opening,

the organic insulating layer defines a first contact hole where the counter electrode is electrically connected to the contact electrode, and

the inorganic insulating layer defines a second contact hole corresponding to the first contact hole, and the contact electrode is electrically connected to the auxiliary electrode at the second contact hole.

6. The display device according to claim 2,

the intermediate layer further comprising a second functional layer facing the first functional layer, the emissive layer being between the first functional layer and the second functional layer,

a first aperture is defined in the first functional layer and a second aperture is defined in the second functional layer, and

the first opening of the intermediate layer is defined by the first and second apertures being aligned with one another.

7. The display device according to claim 6,

a third aperture is defined in the first functional layer and a fourth aperture is defined in the second functional layer, an

The second opening of the intermediate layer is defined by the third and fourth apertures being aligned with one another.

8. The display device of claim 1, wherein the intermediate layer further comprises one or more of a hole transport layer, a hole injection layer, an electron injection layer, and an electron transport layer.

9. The display device according to claim 1, wherein the auxiliary electrode comprises copper and titanium.

10. The display device of claim 2, wherein a portion of the first functional layer defined at the first opening of the intermediate layer is a denatured portion of the first functional layer.

11. The display device according to claim 3,

the thin film transistor of the pixel circuit includes a semiconductor layer, a gate electrode corresponding to the semiconductor layer, and a connection electrode electrically connected to the semiconductor layer, and

the auxiliary electrode and the connection electrode are respective portions of the same material layer on the substrate.

12. The display device according to claim 11, wherein the inorganic insulating layer directly contacts the connection electrode of the thin film transistor to cover the thin film transistor.

13. The display device of claim 1, wherein the contact electrode and the pixel electrode are respective portions of a same layer of material on the substrate.

14. The display device according to claim 1,

the multi-insulating layer includes an inorganic insulating layer and an organic insulating layer farther from the substrate than the inorganic insulating layer; and is

The organic insulating layer defines an open portion at which the counter electrode is electrically connected to the contact electrode, in a region corresponding to the open portion of the first functional layer.

15. The display device according to claim 14, wherein the inorganic insulating layer defines a contact opening corresponding to the open portion of the organic insulating layer in the region corresponding to the open portion of the first functional layer, and the contact electrode is further electrically connected to the auxiliary electrode at the contact opening.

16. The display device according to claim 15, wherein the inorganic insulating layer is between the contact electrode and the auxiliary electrode except at the contact opening in the region corresponding to the opening portion of the first functional layer.

17. A method of manufacturing a display device, the method comprising:

providing on a substrate:

a pixel electrode and a counter electrode facing each other,

a thin film transistor electrically connected to the pixel electrode,

a contact electrode electrically connected to the counter electrode and through which an electrical signal is transmitted to the counter electrode, the contact electrode being spaced apart from the pixel electrode,

an auxiliary electrode electrically connected to the contact electrode and through which the electric signal is transmitted to the contact electrode, the auxiliary electrode being spaced apart from the thin film transistor,

an inorganic insulating layer corresponding to the thin film transistor and the auxiliary electrode,

an organic insulating layer between the inorganic insulating layer and the pixel electrode and between the inorganic insulating layer and the contact electrode,

an open portion in the organic insulating layer, the open portion exposing the inorganic insulating layer to the outside of the organic insulating layer, and

a contact opening in the organic insulating layer and the inorganic insulating layer, the contact opening exposing the auxiliary electrode to the outside of the organic insulating layer and the inorganic insulating layer;

providing an intermediate layer by sequentially providing a first functional layer corresponding to the pixel electrode and the contact electrode and an emission layer corresponding to the pixel electrode, with which light is emitted;

removing a portion of the first functional layer corresponding to the contact electrode to provide an opening in the first functional layer that exposes the contact electrode to outside the first functional layer; and is

Contacting the counter electrode with the contact electrode at the opening in the first functional layer.

18. The method of claim 17, wherein providing the opening in the first functional layer comprises: removing a portion of the first functional layer corresponding to the contact electrode by irradiating a laser beam to the first functional layer.

19. The method of claim 17, wherein providing the intermediate layer further comprises: providing a second functional layer after providing the emission layer, the second functional layer corresponding to the pixel electrode and the contact electrode,

wherein the method further comprises: removing a portion of the second functional layer corresponding to the contact electrode while removing the portion of the first functional layer corresponding to the contact electrode to provide the opening in both the first functional layer and the second functional layer.

20. The method of claim 17, wherein the open portion is larger than the contact opening.

Technical Field

One or more embodiments relate to a display device and a method of manufacturing the same. More particularly, one or more embodiments relate to a display device that is relatively easily manufactured and has relatively high luminance stability and a method of manufacturing the display device.

Background

Organic light emitting display devices have a relatively larger viewing angle, better contrast characteristics, and faster response speed than other display devices, and thus have attracted attention as next-generation display devices.

The organic light emitting display device includes pixels, each of which includes an organic light emitting diode. The organic light emitting diode includes a pixel electrode, a counter electrode facing the pixel electrode, and an intermediate layer including an emission layer between the pixel electrode and the counter electrode. In these organic light emitting display devices, the pixel electrode has an island shape obtained by patterning a material layer to respectively correspond to individual units in the pixel, but the counter electrode has a single body corresponding to a plurality of pixels.

Disclosure of Invention

As the planar area of the organic light emitting display device increases, the conventional organic light emitting display device cannot display a high-quality image due to a voltage drop of the counter electrode provided as a single body.

To address several disadvantages, including the above-described disadvantage, one or more embodiments include a display device that is relatively easy to manufacture and has high luminance stability and a method of manufacturing the display device. However, the embodiment or embodiments are only examples, and the scope of the present invention is not limited thereto.

Additional features will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments.

According to one or more embodiments, a display device includes: a substrate; a pixel electrode and a counter electrode facing each other on a substrate; a pixel circuit including a thin film transistor, the pixel circuit being electrically connected to the pixel electrode at the thin film transistor; a contact electrode electrically connected to the counter electrode and through which an electrical signal is transmitted to the counter electrode, the contact electrode and the pixel electrode being spaced apart from each other along the substrate; an auxiliary electrode electrically connected to the contact electrode and through which an electrical signal is transmitted to the contact electrode, the auxiliary electrode and the thin film transistor being spaced apart from each other along the substrate; an intermediate layer with which light is emitted, the intermediate layer comprising: an emission layer corresponding to the pixel electrode, and a first functional layer corresponding to the pixel electrode and the contact electrode, the first functional layer defining an opening portion at which the contact electrode is exposed to the outside of the intermediate layer; and a multi-insulating layer between the thin film transistor and the pixel electrode and between the auxiliary electrode and the contact electrode, the multi-insulating layer defining a contact opening at which the auxiliary electrode is electrically connected to the contact electrode, the contact opening corresponding to the opening portion of the intermediate layer.

According to one or more embodiments, the opening portion may include a first opening and a second opening spaced apart from each other; and the counter electrode may be electrically connected to the contact electrode at the first opening and the second opening.

According to one or more embodiments, the multi-insulating layer may include: an inorganic insulating layer and an organic insulating layer farther from the substrate than the inorganic insulating layer, and in a region corresponding to the first opening, the organic insulating layer may define an open portion at which the counter electrode is electrically connected to the contact electrode.

According to one or more embodiments, an inorganic insulating layer may be between the contact electrode and the auxiliary electrode in a region corresponding to the first opening to insulate the contact electrode from the auxiliary electrode.

According to one or more embodiments, the organic insulating layer may include a first contact hole at which the counter electrode is electrically connected to the contact electrode, and the inorganic insulating layer may define a second contact hole corresponding to the first contact hole, and the contact electrode is electrically connected to the auxiliary electrode at the second contact hole, in a region corresponding to the second opening.

According to one or more embodiments, the intermediate layer may further include a second functional layer facing the first functional layer, the emission layer is between the first functional layer and the second functional layer, the first aperture may be defined in the first functional layer and the second aperture may be defined in the second functional layer, and the first opening of the intermediate layer may be defined by the first aperture and the second aperture aligned with each other.

In accordance with one or more embodiments, a third aperture may be defined in the first functional layer, a fourth aperture may be defined in the second functional layer, and the second opening may be defined by the third aperture and the fourth aperture aligned with each other.

According to one or more embodiments, the intermediate layer may further include one or more of a hole transport layer, a hole injection layer, an electron injection layer, and an electron transport layer.

According to one or more embodiments, the auxiliary electrode may include copper (Cu) and titanium (Ti).

According to one or more embodiments, the portion of the first functional layer defined at the first opening of the intermediate layer may be a denatured portion of the first functional layer.

According to one or more embodiments, the thin film transistor of the pixel circuit may include a semiconductor layer, a gate electrode corresponding to the semiconductor layer, and a connection electrode electrically connected to the semiconductor layer, and the auxiliary electrode and the connection electrode may be respective portions of the same material layer on the substrate.

According to one or more embodiments, the inorganic insulating layer may directly contact the connection electrode of the thin film transistor to cover the thin film transistor.

According to one or more embodiments, the contact electrode and the pixel electrode may be respective portions of the same material layer on the substrate.

According to one or more embodiments, the multi-insulating layer may include: an inorganic insulating layer and an organic insulating layer farther from the substrate than the inorganic insulating layer; and the organic insulating layer may define an open portion at which the counter electrode is electrically connected to the contact electrode, in a region corresponding to the open portion of the first functional layer.

According to one or more embodiments, the inorganic insulating layer may define a contact opening corresponding to the open portion of the organic insulating layer in a region corresponding to the open portion of the first functional layer, and the contact electrode is further electrically connected to the auxiliary electrode at the contact opening.

According to one or more embodiments, the inorganic insulating layer may be between the contact electrode and the auxiliary electrode except at the contact opening.

According to one or more embodiments, a method of manufacturing a display device includes: providing on a substrate: a pixel electrode and a counter electrode facing each other, a thin film transistor electrically connected to the pixel electrode, a contact electrode electrically connected to the counter electrode and through which an electrical signal is transmitted to the counter electrode, the contact electrode being spaced apart from the pixel electrode, an auxiliary electrode electrically connected to the contact electrode and through which the electrical signal is transmitted to the contact electrode, the auxiliary electrode being spaced apart from the thin film transistor, an inorganic insulating layer corresponding to the thin film transistor and the auxiliary electrode, an organic insulating layer between the inorganic insulating layer and the pixel electrode and between the inorganic insulating layer and the contact electrode, an open portion in the organic insulating layer exposing the inorganic insulating layer to the outside of the organic insulating layer, and a contact opening in the organic insulating layer and the inorganic insulating layer exposing the auxiliary electrode to the outside of the organic insulating layer and the inorganic insulating layer; providing an intermediate layer by sequentially providing a first functional layer corresponding to the pixel electrode and the contact electrode and an emission layer corresponding to the pixel electrode, with which light is emitted; removing a portion of the first functional layer corresponding to the contact electrode to provide an opening in the first functional layer that exposes the contact electrode to the outside of the first functional layer; and contacting the counter electrode with the contact electrode at the opening in the first functional layer.

In accordance with one or more embodiments, providing an opening comprises: a portion of the first functional layer corresponding to the contact electrode is removed by irradiating a laser beam to the first functional layer.

In accordance with one or more embodiments, providing an intermediate layer may further comprise: providing a second functional layer after providing the emission layer, the second functional layer corresponding to the pixel electrode and the contact electrode, and the method may further include: while removing the portion of the first functional layer corresponding to the contact electrode, removing a portion of the second functional layer corresponding to the contact electrode to provide an opening in both the first functional layer and the second functional layer.

According to one or more embodiments, the open portion may be larger than the contact opening.

These and/or other features will become apparent and more readily appreciated from the following description of the embodiments, the claims and the accompanying drawings.

These general and specific embodiments may be implemented using systems, methods, computer programs, or a combination thereof.

Drawings

These and/or other features will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

FIG. 1 is a schematic top plan view of an embodiment of a display device;

FIG. 2 is an equivalent circuit diagram of an embodiment of one pixel of a display device;

fig. 3 to 6 are sectional views illustrating processes and structures in an embodiment of a method of manufacturing a display device; and is

Fig. 7 and 8 are sectional views illustrating a process and a structure in another embodiment of a method of manufacturing a display device.

Detailed Description

Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as limited to the description set forth herein. Accordingly, the embodiments are described below to clarify features of the present description only by referring to the drawings.

As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. Expressions such as "at least one of …," when located after a list of elements, modify the list of entire elements and do not modify an individual element of the list. "at least one" is not to be construed as limiting "a". "or" means "and/or". As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

It will be understood that, although the terms "first," "second," etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another.

It will be further understood that the terms "comprises" and/or "comprising," when used herein, specify the presence of stated features or components, but do not preclude the presence or addition of one or more other features or components.

It will be understood that when a layer, region or component is referred to as being "on" another layer, region or component, it can be directly or indirectly formed on the other layer, region or component. That is, for example, intervening layers, regions, or components may be present. In contrast, when a layer, region or component is referred to as being "on" another layer, region or component, there are no intervening layers, regions or components present.

Furthermore, relative terms, such as "lower" or "bottom" and "upper" or "top," may be used herein to describe one element's relationship to another element as illustrated in the figures. It will be understood that the relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on the "upper" side of the other elements. Thus, the exemplary term "lower" can encompass both an orientation of "lower" and "upper," depending on the particular orientation of the figure. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" and "beneath" can encompass both an orientation of above and below.

"about" or "approximately" as used herein includes the stated value, and is meant to be within an acceptable deviation of the particular value as determined by one of ordinary skill in the art, taking into account the measurement in question and the error associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "about" may mean within one or more standard deviations, or within ± 30%, 20%, 10%, or 5% of the stated value.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

The size of elements in the drawings may be exaggerated for convenience of explanation. In other words, since the sizes and thicknesses of components in the drawings are arbitrarily illustrated for convenience of explanation, the following embodiments are not limited thereto. Exemplary embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of illustrative embodiments. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, the embodiments described herein should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region illustrated or described as flat may typically have rough and/or non-linear features. Furthermore, the sharp corners illustrated may be rounded. Thus, the regions illustrated in the figures are schematic in nature and the shapes of the regions are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the present claims.

In the following examples, the x-axis, y-axis, and z-axis are not limited to the three axes of a rectangular coordinate system, and may be explained in a broader sense. For example, the x-axis, y-axis, and z-axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other.

While certain embodiments may be practiced differently, certain process sequences may be performed in a different order than that described. For example, two processes described in succession may be executed substantially concurrently or in the reverse order to that described.

Fig. 1 is a schematic top plan view of an embodiment of a display device, and fig. 2 is an equivalent circuit diagram of an embodiment of a pixel of the display device.

Referring to fig. 1, the display device 10 may include a display area DA and a peripheral area PA adjacent to the display area DA. In an embodiment, the peripheral area PA may surround the display area DA in a top plan view. Fig. 1 shows a substrate 100 of the display device 10 as a top plan view of the entire display device 10. An image is displayed and/or light is emitted at the display area DA. In the peripheral area PA, an image may not be displayed and/or light may not be emitted to define a non-display area.

The display device 10 and/or various components of the display device 10 may include a display area DA and a peripheral area PA. Referring to fig. 1, for example, the substrate 100 may include a display area DA and a peripheral area PA. The display device 10 and/or various components of the display device 10 may be disposed in a plane defined by a first direction and a second direction that intersect one another. Referring to fig. 1, a substrate 100 is disposed in a plane defined by an x-axis direction and a y-axis direction. The thicknesses of the display device 10 and/or various components of the display device 10 are defined along a third direction that intersects each of the first and second directions. Referring to fig. 3, the thickness of the substrate 100 and the various layers on the substrate 100 are defined along the z-axis direction.

The display device 10 includes a plurality of pixels P (e.g., a plurality of pixels P or pixels P) provided in the display area DA. Referring to fig. 2, each of the pixels P may include a pixel circuit PC and an organic light emitting diode OLED as a display element (e.g., a light emitting element) connected to the pixel circuit PC. The pixel circuit PC may include a first thin film transistor ("TFT") T1, a second TFT T2, and a storage capacitor Cst. Each of the pixels P may emit, for example, red, green, blue or white light through the organic light emitting diode OLED. An image may be displayed at the pixel P using light emitted from the organic light emitting diode OLED.

The second TFT T2 (e.g., the switching TFT T2) may be connected to the scan line SL and the data line DL, and transmits the data voltage received through the data line DL to the first TFT T1 based on the switching voltage received through the scan line SL. The storage capacitor Cst may be connected to the second TFT T2 and the driving voltage line PL, and may store a voltage corresponding to a difference between the voltage received from the second TFT T2 and the first power supply voltage ELVDD supplied to the driving voltage line PL. That is, the various lines described herein may represent signal lines through which electrical signals (e.g., data signals, control signals, drive signals, and/or power signals) are transmitted. In an embodiment, the electrical signal may include a data voltage, a switching voltage, a power supply voltage, a scan signal, a data signal, and the like.

The first TFT T1 (e.g., the driving TFT T1) may be connected to the driving voltage line PL and the storage capacitor Cst, and may control an electric driving current flowing from the driving voltage line PL to the organic light emitting diode OLED according to a voltage value stored in the storage capacitor Cst. The organic light emitting diode OLED may generate and/or emit light having a certain brightness by an electric driving current. A counter electrode (e.g., a cathode electrode) of the organic light emitting diode OLED may receive the second power supply voltage ELVSS.

Although the case where the pixel circuit PC includes two TFTs and one storage capacitor Cst is illustrated in fig. 2, the embodiment is not limited thereto. The number of TFTs and the number of storage capacitors Cst may vary according to the design of the pixel circuit PC. In the embodiment, for example, the pixel circuit PC may further include 4, 5, or more TFTs in addition to the two TFTs described above.

Referring back to fig. 1, a scan driver 1100 generating and/or supplying a scan signal to each of the pixels P, a data driver 1200 generating and/or supplying a data signal to each of the pixels P, and main power wirings (not shown) through which the first and second power supply voltages ELVDD and ELVSS are supplied may be disposed in the peripheral region PA. In fig. 1, the data driver 1200 is located at one side of the substrate 100. However, according to another embodiment, the data driver 1200 may be located outside the substrate 100, such as on a flexible printed circuit board ("FPCB") electrically connected to the pad of the display device 10. In an embodiment, a pad may be disposed on the substrate 100, and the FPCB may be connected to the display device 10 at the pad.

Fig. 3 to 6 are sectional views illustrating processes and structures in an embodiment of a method of manufacturing a display device. It will be understood that various layers provided on the substrate 100 in the following description may exist on the substrate 100 of fig. 1, but are omitted in fig. 1 for convenience of illustration. In an embodiment, the left side of the views in fig. 3 to 6 may correspond to the peripheral area PA (fig. 1), and the right side of the views in fig. 3 to 6 may correspond to the display area DA (fig. 1), but is not limited thereto.

Referring to fig. 3, a pixel electrode 210 and a contact electrode 210a spaced apart from each other may be provided or formed on the substrate 100. Although the pixel electrode 210 and the contact electrode 210a are provided or formed on the organic insulating layer 170 in fig. 3, embodiments are not limited thereto.

Various layers may be provided or formed between each of the pixel electrode 210 and the contact electrode 210a and the substrate 100, respectively. Referring to fig. 3 to 6, a thin film transistor TFT and a capacitor CAP are provided or formed on the substrate 100, and a multi-insulating layer MIL (e.g., an insulating multi-layer MIL) is provided or formed to cover the thin film transistor TFT and the capacitor CAP. The pixel electrode 210 and the contact electrode 210a are provided or formed on the multi-insulating layer MIL.

The substrate 100 may comprise any of a variety of materials, for example, glass, metal, or plastic such as polyethylene terephthalate ("PET"), polyethylene naphthalate ("PEN"), or polyimide ("PI").

A pixel circuit PC for supplying an electric signal to a display element (e.g., an organic light emitting diode OLED) is provided or formed on the substrate 100. The pixel circuit PC may include a thin film transistor TFT and a capacitor CAP. In an embodiment, the electrical signal may be provided to the display elements in the display area DA from outside the display area DA.

Specifically, the buffer layer 110 may be disposed on the substrate 100 in order to planarize the surface of the substrate 100 and/or prevent impurities and the like from penetrating into the semiconductor layer 120 of the thin film transistor TFT. The buffer layer 110 may include silicon oxide (SiO)_x) Silicon nitride (SiN)_x) Or/and silicon oxynitride (SiON), and the semiconductor layer 120 may be located on the buffer layer110.

A gate electrode 140 of the thin film transistor TFT is disposed on the semiconductor layer 120. The source electrode 160s and the drain electrode 160d of the thin film transistor TFT electrically communicate with each other in response to a signal applied to the gate electrode 140. In an embodiment, the gate electrode 140 may include or be formed of at least one selected from aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu) in a single layer structure or a multi-layer structure, for example, in consideration of adhesion to adjacent layers, surface smoothness of layers stacked on the gate electrode 140, and processability.

In order to ensure insulation between the semiconductor layer 120 and the gate electrode 140 within the thin film transistor TFT, a gate insulating layer 130 may be between the semiconductor layer 120 and the gate electrode 140. Referring to fig. 3, the gate insulating layer 130 may be further within the capacitor CAP. That is, the gate insulating layer 130 described above may be a corresponding portion of the same gate insulating material layer. The gate insulating layer 130 may include an inorganic insulating material such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, or hafnium oxide.

The interlayer insulating layer 150 may be disposed on the gate electrode 140, and may include an inorganic insulating material such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, or hafnium oxide. The interlayer insulating layer 150 may be provided or formed in a single layer structure or a multi-layer structure including one or more of the above materials.

A source electrode 160s and a drain electrode 160d, each of which is a connection electrode electrically connected to the semiconductor layer 120 of the thin film transistor TFT, are disposed on the interlayer insulating layer 150. The source electrode 160s and the drain electrode 160d are electrically connected to the semiconductor layer 120 through contact holes provided or formed in the interlayer insulating layer 150 and the gate insulating layer 130. The source electrode 160s and the drain electrode 160d may each include or be formed of at least one selected from aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu) in a single layer structure or a multi-layer structure in consideration of conductivity and the like. According to an embodiment, each of the source electrode 160s and the drain electrode 160d as the connection electrode may be provided or formed as a triple layer of Ti/Al/Ti or Mo/Al/Mo. According to an embodiment, each of the source electrode 160s and the drain electrode 160d may be provided or formed as a multi-layered structure of Cu/Ti.

In order to protect the thin film transistor TFT having the above layers and planarize an upper surface of the thin film transistor TFT, a multi-insulating layer MIL may be provided or formed on the thin film transistor TFT. According to the present embodiment, the multi-insulating layer MIL may include an inorganic insulating layer 165 directly contacting the source and drain electrodes 160s and 160d of the thin film transistor TFT and an organic insulating layer 170 providing a flat upper surface on which the pixel electrode 210 is provided or formed.

The inorganic insulating layer 165 may prevent a conductive wiring or a conductive element (e.g., like a signal line) including a metal (like aluminum) that may be damaged by an etchant from being exposed to an etching material and/or an etching environment (e.g., an etchant) during the manufacture of the display device 10. The inorganic insulating layer 165 may include, for example, silicon oxide (SiO)_x) Silicon nitride (SiN)_x) Or/and silicon oxynitride (SiON), and may be provided or formed as a multilayer structure or a single layer structure. According to an embodiment, the inorganic insulating layer 165 may include silicon nitride (SiN)_x)。

The inorganic insulating layer 165 may have at least about 500 angstroms

Is measured. According to another embodiment, the thickness of the inorganic insulating layer 165 may be equal to or greater than about

May be equal to or greater than about

May be equal to or greater than about

May be equal to or greater than aboutMay be equal to or greater than aboutMay be equal to or greater than about

May be equal to or greater than aboutMay be equal to or greater than aboutMay be equal to or greater than aboutMay be equal to or greater than aboutMay be equal to or greater than about

Or may be equal to or greater than about

Alternatively, the inorganic insulating layer 165 may have a thickness of aboutTo about

Is measured.

The organic insulating layer 170 may be disposed on the inorganic insulating layer 165 to be disposed farther from the substrate 100 than the inorganic insulating layer 165. The upper surface of the organic insulating layer 170 may be approximately flat. The organic insulating layer 170 may include an organic insulating material, for example, polymethylmethacrylate ("PMMA") or polystyrene ("PS"), a polymer derivative having a phenol group, an acryl-based polymer, an imide-based polymer, an acryl-based polymer, an amide-based polymer, a fluorine-based polymer, a p-xylene-based polymer, a vinyl alcohol-based polymer, or a blend thereof. According to an embodiment, the organic insulating layer 170 may include polyimide.

The pixel electrode 210 may be on the organic insulating layer 170. The pixel electrode 210 may include materials such as indium tin oxide ("ITO"), indium zinc oxide ("IZO"), zinc oxide ("ZnO"), indium oxide ("In"), and the like₂O₃"), indium gallium oxide (" IGO "), or aluminum zinc oxide (" AZO "). According to another embodiment, the pixel electrode 210 may reflect light, such as by including a reflective layer or reflective material. The pixel electrode 210 may include, for example, silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a combination of these materials. According to another embodiment, the pixel electrode 210 may further include ITO, IZO, ZnO, or In₂O₃A relatively thin layer or film is provided or formed. Such thin layers or films may be disposed above or below the reflective layer.

The pixel defining layer 180 may be disposed on the pixel electrode 210. The pixel defining layer 180 may define or include an opening through which an upper surface of the pixel electrode 210 is exposed, and may cover an edge of the pixel electrode 210. The opening in the pixel defining layer 180 may correspond to or define a light emitting region of the pixel P. The pixel defining layer 180 may include an organic insulating material. Alternatively, the pixel defining layer 180 may include, for example, silicon nitride (SiN)_x) Silicon oxynitride (SiON) or silicon oxide (SiO)_x) The inorganic insulating material of (1). Alternatively, the pixel defining layer 180 may include both an organic insulating material and an inorganic insulating material.

The intermediate layer 220 includes an emission layer 223. The intermediate layer 220 may include a first functional layer 221 (e.g., an initial first functional material layer 221) below the emission layer 223 and/or a second functional layer 222 (e.g., an initial second functional material layer 222) above the emission layer 223. The emissive layer 223 may include a relatively low molecular weight organic material or a relatively high molecular weight organic material with which a certain color of light is generated and/or emitted.

Referring to fig. 3, an initial first functional material layer 221 and an initial second functional material layer 222 are first provided or formed on the substrate 100 (e.g., along the entire substrate 100). In an embodiment, the initial first functional material layer 221 and the initial second functional material layer 222 are provided corresponding to the display area DA (fig. 1) and the peripheral area PA (fig. 1). For ease of explanation, the following description of the method refers to the first functional layer 221 and the second functional layer 222, however, it will be understood that the intermediate processes for forming these layers include the initial formation of the material layers used to form the first functional layer 221 and the second functional layer 222.

The first functional layer 221 may include a single layer structure or a multi-layer structure. In an embodiment, for example, when the first functional layer 221 is provided or formed of a relatively high molecular weight organic material, the first functional layer 221 may include a hole transport layer ("HTL") having a single layer structure and may include poly- (3,4) -ethylene-dihydroxy thiophene ("PEDOT") or polyaniline ("PANI"). On the other hand, when the first functional layer 221 is provided or formed of a relatively low molecular weight organic material, the first functional layer 221 may include a hole injection layer ("HIL") and an HTL.

The second functional layer 222 may be omitted. In an embodiment, for example, when the first functional layer 221 and the emission layer 223 are provided or formed of relatively high molecular weight materials, the second functional layer 222 may be included in a stacked structure on the substrate 100 as described above. The second functional layer 222 may include a single layer structure or a multi-layer structure. The second functional layer 222 may include an electron transport layer ("ETL") and/or an electron injection layer ("EIL").

The emission layer 223 of the intermediate layer 220 may be disposed in each pixel P within the display area DA. The emission layer 223 may be patterned as a discrete element to correspond to the pixel electrode 210. In contrast to the emission layer 223, the first functional layer 221 and/or the second functional layer 222 of the intermediate layer 220 may be provided or formed to correspond to the plurality of pixels P. In an embodiment, the first functional layer 221 and/or the second functional layer 222 of the intermediate layer 220 may correspond to the entirety of the display area DA, similar to the structure of the counter electrode 230 (fig. 6) which will be described later. In an embodiment, the first functional layer 221 and/or the second functional layer 222 of the intermediate layer 220 may further correspond to the peripheral area PA.

The counter electrode 230 may include a conductive material having a relatively low work function. In an embodiment, for example, the counter electrode 230 may include a (semi) transparent material layer including, for example, silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or an alloy of these materials. Alternatively, the counter electrode 230 may further include a material such as ITO, IZO, ZnO, or In on the (semi) transparent material layer including any of the above-described materials₂O₃Of the material layer (c). In an embodiment of manufacturing the display device 10, the first functional layer 221, the second functional layer 222 and the counter electrode 230 may be provided or formed by thermal deposition of materials for forming the respective layers or electrodes.

The auxiliary electrode 160a may be disposed on the interlayer insulating layer 150 at one side of the pixel circuit PC. In the embodiment, the auxiliary electrode 160a may be disposed in the peripheral area PA (fig. 1), without being limited thereto. The auxiliary electrode 160a may be provided or formed using the same process as that for forming the source electrode 160s and the drain electrode 160 d. The electrode of the capacitor CAP may be provided or formed using the same process as that for forming the source electrode 160s and the drain electrode 160 d. Accordingly, the auxiliary electrode 160a and/or the electrode of the capacitor CAP may include the same material as that included in the source electrode 160s and the drain electrode 160 d. Referring to a similar hatching pattern in fig. 3, the auxiliary electrode 160a, the electrode of the capacitor CAP, the source electrode 160s, and the drain electrode 160d may be respective portions of the same material layer on the substrate 100, and may be portions respectively formed from the same material layer in a method of manufacturing the display device 10. According to an embodiment, the auxiliary electrode 160a may be provided or formed in a multi-layered structure of Cu/Ti.

A multi-insulating layer MIL may be disposed on the auxiliary electrode 160 a. The inorganic insulating layer 165 may directly contact the auxiliary electrode 160a to prevent the auxiliary electrode 160a from being exposed to an etching environment according to a subsequent process, and may reduce or effectively prevent the auxiliary electrode 160a from being separated from other layers on the substrate 100.

The multi-insulating layer MIL may have a contact portion CT (e.g., a contact opening CT) where a portion of the upper surface of the auxiliary electrode 160a is exposed. When the contact hole CNT for electrically connecting the pixel electrode 210 to the drain electrode 160d of the thin film transistor TFT is provided or formed, the contact portion CT (e.g., the contact hole portion CT) may be provided or formed at the same time. The contact portion CT may include a first contact hole 170h2 defined in the organic insulating layer 170 and a second contact hole 165h defined in the inorganic insulating layer 165. The first contact hole 170h2 and the second contact hole 165h may correspond to or align with each other to form the contact portion CT as a continuous hole. A contact region CTA at which a contact electrode 210a to be described later is electrically connected to the auxiliary electrode 160a through a contact portion CT may be provided or formed.

The multi-insulating layer MIL may also have an open portion OP (e.g., an opening OP) where a portion of the organic insulating layer 170 is omitted. The open portion OP may be defined with an open hole 170h1 in the organic insulating layer 170, at which a portion of the inorganic insulating layer 165 is exposed at the open hole 170h 1. An open area OPA, through which a portion of the inorganic insulating layer 165 is exposed, may be defined at the open portion OP.

In fig. 3, the organic insulating layer 170 defines or includes both the open hole 170h1 defining the open portion OP and the first contact hole 170h2 defining the contact portion CT. The open hole 170h1 and the first contact hole 170h2 are spaced apart from each other in a direction along the substrate 100 (e.g., in the x-axis direction). However, the embodiments are not limited thereto.

According to a modified embodiment, the open hole 170h1 and the first contact hole 170h2 of fig. 3 may be connected to each other, and thus a single one opening as shown in fig. 7 may be formed. Referring to fig. 7, a contact portion CT 'exposing a portion of the auxiliary electrode 160a may be provided or formed in the inorganic insulating layer 165, and an open portion OP' corresponding to the contact portion CT 'and having a size greater than the contact portion CT' along the substrate 100 may be provided or formed in the organic insulating layer 170. Although fig. 3 to 6 and 7 show the x-axis direction (fig. 1), the structures in fig. 3 and 7 may also be applied in the y-axis direction.

In fig. 7, a portion of the auxiliary electrode 160a may be exposed through the contact portion CT 'located within the open portion OP'. The exposed portion of auxiliary electrode 160a may define a contact area CTA' where contact electrode 210a and auxiliary electrode 160a are connected to each other. The portion of the open portion OP ' other than the contact region CTA ' may be understood as an open region OPA '. That is, the contact region CTA ' and the open region OPA ' may define the entirety of the open portion OP '. There is no electrical contact between the elements in the open area OPA ', but the open area OPA' can reduce outgassing, which will be described later. The inorganic insulating layer 165 is between the contact electrode 210a and the auxiliary electrode 160a except for the contact portion CT'.

The contact electrode 210a may be disposed on the auxiliary electrode 160a with the multi-insulating layer MIL between the contact electrode 210a and the auxiliary electrode 160 a. The contact electrode 210a may be electrically connected to the auxiliary electrode 160a at a contact portion CT. The contact electrode 210a may be provided or formed at the open portion OP. The contact electrode 210a may be located in the open portion OP, and may be insulated from the auxiliary electrode 160a with the inorganic insulating layer 165 between the contact electrode 210a and the auxiliary electrode 160 a. In the embodiment, the contact electrode 210a may be disposed in the peripheral area PA (fig. 1), without being limited thereto. According to an embodiment, the contact electrode 210a may be provided or formed using the same process as that for forming the pixel electrode 210, and may include the same material as that included in the pixel electrode 210. Referring to a similar pattern of hatching in fig. 3, the contact electrode 210a and the pixel electrode 210 may be respective portions of the same material layer on the substrate 100, and may be portions separately formed from the same material layer in a method of manufacturing the display device 10.

In this way, an open region OPA (i.e., an open portion OP) at which a portion of the organic insulating layer 170 is omitted may be further included in addition to the contact portion CT at which the auxiliary electrode 160a and the contact electrode 210a are electrically connected to each other, and thus the occurrence of outgassing in the organic insulating layer 170 including an organic insulating material during the manufacture of the display device 10 may be reduced.

Referring to fig. 4, a laser beam LB may be irradiated to portions of the initial first and second functional material layers 221 and 222 corresponding to the contact portions CT and the open portions OP. Due to the irradiation of the laser beam LB, respective portions of the initial first functional material layer 221 and the initial second functional material layer 222 for forming the first functional layer 221 and the second functional layer 222 may be removed from the contact portion CT and the open portion OP.

As shown in fig. 5, the opening portions 220H may be provided or formed or defined by a laser beam LB in an initial first functional material layer 221 from which the first functional layer 221 is formed and an initial second functional material layer 222 from which the second functional layer 222 is formed. The opening portion 220H may include a first opening 220a and a second opening 220b spaced apart from each other along the substrate 100. Specifically, in each of the initial first functional material layer 221 from which the first functional layer 221 is formed and the initial second functional material layer 222 from which the second functional layer 222 is formed, a first opening 220a corresponding to the open portion OP and a second opening 220b corresponding to the contact portion CT may be provided or formed. Since the first and second openings 220a and 220b are provided or formed by removing respective portions of the initial first functional material layer 221 from which the first functional layer 221 is formed and the initial second functional material layer 222 from which the second functional layer 222 is formed, such as by using the laser beam LB, portions (e.g., side surfaces) of the first and second functional layers 221 and 222 defined to the first and second openings 220a and 220b may be portions (e.g., heat-denatured portions) denatured by relatively high heat.

The first opening 220a may include a first hole 221a defined in an initial first functional material layer 221 and a second hole 222a defined in an initial second functional material layer 222. The second opening 220b may include a third hole 221b defined in the initial first functional material layer 221 and a fourth hole 222b defined in the initial second functional material layer 222. The first hole 221a and the second hole 222a may correspond to or align with each other, and the third hole 221b and the fourth hole 222b may correspond to or align with each other.

Referring to a similar hatch pattern in fig. 5, portions of the first functional layer 221 at opposite sides of the first and third holes 221a and 221b and at the pixel P (e.g., corresponding to and extending from the light emitting region at the emission layer 223) may be respective portions of the same material layer on the substrate 100, and may be portions respectively formed of the same initial material layer in a method of manufacturing the display device 10. Similarly, portions of the second functional layer 222 at opposite sides of the second and fourth holes 222a and 222b and at the pixel P (e.g., corresponding to and extending from the light emitting region at the emission layer 223) may be respective portions of the same material layer on the substrate 100, and may be portions respectively formed from the same initial material layer in the method of manufacturing the display device 10.

According to the present embodiment, the intermediate layer 220 includes both the first functional layer 221 and the second functional layer 222. However, according to another embodiment, the second functional layer 222 may be omitted. In this case, the first opening 220a may include only the first hole 221a defined in the first functional layer 221, and the second opening 220b may include only the third hole 221b defined in the first functional layer 221.

Although the first and second openings 220a and 220b of the opening portion 220H are spaced apart from each other in fig. 5, embodiments of the present disclosure are not limited thereto. According to a modified embodiment, the first opening 220a and the second opening 220b of fig. 5 may be connected to each other, and thus may form a single one of the opening portions 220H that are continuous along the substrate 100 as shown in fig. 7.

The counter electrode 230 may be provided or formed on the stacked structure of fig. 7, and thus a structure as shown in fig. 8 may be provided or formed. The above-described structures of fig. 7 and 8 may be understood as illustrations of a single structure provided or formed by one or more manufacturing operations.

Referring back to fig. 5, the width W2 of the first opening 220a along the substrate 100 (e.g., in the x-axis direction) may be less than the width W1 of the open portion OP in the open area OPA along the substrate 100 (e.g., in the x-axis direction), but embodiments of the present disclosure are not limited thereto.

Referring to fig. 6, the counter electrode 230 may be provided or formed on the stacked structure of fig. 5, such as in the entirety of the display area DA. The counter electrode 230 may be disposed opposite the pixel electrode 210 with the intermediate layer 220 between the counter electrode 230 and the pixel electrode 210. The counter electrode 230 may extend from the intermediate layer 220 to the first and second openings 220a and 220 b. The counter electrode 230 may directly contact the contact electrode 210a at the first and second openings 220a and 220 b.

In the display device 10 and the method of manufacturing the display device 10 according to the present embodiment, the auxiliary electrode 160a and the contact electrode 210a electrically connecting the counter electrode 230 to the auxiliary electrode 160a are provided or formed such that an electrical signal is transmitted to the counter electrode 230 through the auxiliary electrode 160a and the contact electrode 210a having relatively high electrical conductivity. Accordingly, it is possible to effectively prevent or minimize internal resistance ("IR") drop in the counter electrode 230, which may occur in the conventional structure in which the auxiliary electrode 160a and the contact electrode 210a are not provided. Therefore, the generation of an unexpected luminance deviation in the plurality of pixels P can be reduced or effectively prevented, or the luminance deviation can be minimized.

For the contact between the counter electrode 230 and the auxiliary electrode 160a, as shown in fig. 6, at least a portion of the contact electrode 210a should not be covered by the first and second functional layers 221 and 222. For this, when the initial first functional material layer 221 from which the first functional layer 221 is provided and the initial second functional material layer 222 from which the second functional layer 222 is provided are first provided or formed on the substrate 100 in the conventional display device, the initial first functional material layer 221 and the initial second functional material layer 222 may be selectively omitted at a portion of the contact electrode 210 a. However, in the method of forming the conventional display device, a mask is used to pattern the initial first functional material layer 221 and the initial second functional material layer 222 and provide the first functional layer 221 and the second functional layer 222. Accordingly, the manufacturing process of the conventional display device may be complicated, such as a process including a process in which the mask and the substrate 100 are precisely aligned with each other.

However, in one or more embodiments of the method of manufacturing the display device 10, the initial first functional material layer 221 and the initial second functional material layer 222 are first provided or formed on the substrate 100 (e.g., along the entirety of the substrate 100), and only respective portions of the initial first functional material layer 221 and the initial second functional material layer 222 corresponding to the contact electrodes 210a are selectively removed, such as by using a laser beam, and thus the manufacturing efficiency may be greatly improved.

While the present disclosure has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present disclosure as defined by the following claims. As described above, according to the embodiments of the present disclosure, it is possible to provide a display device that is easy to manufacture and has relatively high luminance stability and a method of manufacturing the display device. Of course, the scope of the present disclosure is not limited by this effect.

It is to be understood that the embodiments described herein are to be considered in a descriptive sense only and not for purposes of limitation. The description of features within each embodiment should typically be considered as other similar features that may be used in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope defined by the following claims.