阅读说明：本技术 一种采用电压驱动的可控硅 (Silicon controlled rectifier driven by voltage ) 是由 唐红祥 于 2020-06-08 设计创作，主要内容包括：本发明涉及功率半导体器件领域,公开了一种采用电压驱动的可控硅,包括N型硅片,N型硅片底部设有P型扩散层,P型扩散层底部电连接阳极电极,N型硅片顶部设有第一P阱,第一P阱内设有第一N扩散区,N型硅片顶部设有第二P阱,第二P阱内设有第二N扩散区,N型硅片顶部连接绝缘层,绝缘层上设有输出电极,输出电极穿过绝缘层分别与第一P阱和第一N扩散区电连接,绝缘层内还设有控制电极,绝缘层在第二P阱的对应处分别设有阴极电极和门极电极,阴极电极穿过绝缘层与第二N扩散区电连接,门极电极穿过绝缘层与第二P阱电连接,本发明将可控硅的导通控制从电流驱动变为电压驱动,降低了对驱动IC的要求,减少了可控硅的应用成本。(The invention relates to the field of power semiconductor devices, and discloses a voltage-driven silicon controlled rectifier, which comprises an N-type silicon chip, wherein the bottom of the N-type silicon chip is provided with a P-type diffusion layer, the bottom of the P-type diffusion layer is electrically connected with an anode electrode, the top of the N-type silicon chip is provided with a first P well, a first N diffusion region is arranged in the first P well, the top of the N-type silicon chip is provided with a second P well, a second N diffusion region is arranged in the second P well, the top of the N-type silicon chip is connected with an insulating layer, an output electrode is arranged on the insulating layer, the output electrode penetrates through the insulating layer and is respectively and electrically connected with the first P well and the first N diffusion region, a control electrode is also arranged in the insulating layer, the insulating layer is respectively provided with a cathode electrode and a gate electrode at the corresponding positions of the second P well, the cathode electrode penetrates through the insulating layer and is electrically connected, the requirements on the drive IC are reduced, and the application cost of the controllable silicon is reduced.)

1. A silicon controlled rectifier that adopts voltage drive, its characterized in that: the N-type silicon wafer is provided with a P-type diffusion layer at the bottom, the bottom of the P-type diffusion layer is electrically connected with an anode electrode, the top of the N-type silicon wafer is provided with at least one first P well, at least one first N diffusion region is arranged in the first P well, the top of the N-type silicon wafer is also provided with a second P well, and at least one second N diffusion region is arranged in the second P well;

the top of the N-type silicon wafer is connected with an insulating layer, an output electrode is arranged on the insulating layer, the output electrode penetrates through the insulating layer and is respectively electrically connected with the first P well and the first N diffusion region, a control electrode is further arranged in the insulating layer and used for receiving and driving a control signal A for conducting the anode electrode and the output electrode, a cathode electrode and a gate electrode are respectively arranged at the corresponding position of the second P well and are separated by the insulating layer, the cathode electrode penetrates through the insulating layer and is electrically connected with the second N diffusion region, and the gate electrode penetrates through the insulating layer and is electrically connected with the second P well and used for receiving and driving a control signal B for conducting the anode electrode and the cathode electrode.

2. The thyristor according to claim 1, wherein: two first N diffusion regions are arranged in parallel in the first P well.

Technical Field

The invention relates to the field of power semiconductor devices, in particular to a silicon controlled rectifier driven by voltage.

Background

At present, the conduction of the thyristor, namely the thyristor, is driven by current, namely, the IC inputs a large-current trigger signal to a gate pole of the thyristor, and the requirement of the driving mode on the IC is higher, so that in the application field of the thyristor, the high-requirement driving IC increases the application cost of the thyristor.

Disclosure of Invention

In view of the defects of the background art, the invention provides the silicon controlled rectifier driven by voltage, and aims to solve the technical problems that the existing silicon controlled rectifier is driven by a current mode, the requirement on a driving IC is higher, and the application cost of the silicon controlled rectifier is increased.

In order to solve the technical problems, the invention provides the following technical scheme: a silicon controlled rectifier driven by voltage comprises an N-type silicon wafer, wherein a P-type diffusion layer is arranged at the bottom of the N-type silicon wafer, the bottom of the P-type diffusion layer is electrically connected with an anode electrode, at least one first P well is arranged at the top of the N-type silicon wafer, at least one first N diffusion region is arranged in the first P well, a second P well is also arranged at the top of the N-type silicon wafer, and at least one second N diffusion region is arranged in the second P well;

the top of the N-type silicon wafer is connected with an insulating layer, an output electrode is arranged on the insulating layer, and the output electrode penetrates through the insulating layer and is electrically connected with the first P well and the first N diffusion region respectively;

the insulating layer is also internally provided with a control electrode which is used for receiving a control signal A for driving the anode electrode and the output electrode to be conducted;

the insulating layer is provided with a cathode electrode and a gate electrode at the corresponding position of the second P well respectively, the cathode electrode and the gate electrode are separated by the insulating layer, the cathode electrode penetrates through the insulating layer and is electrically connected with the second N diffusion region, and the gate electrode penetrates through the insulating layer and is electrically connected with the second P well and used for receiving a control signal B for driving the conduction of the anode electrode and the cathode electrode.

Furthermore, two first N diffusion regions are arranged in parallel in the first P well.

Compared with the prior art, the invention has the beneficial effects that: when the drive silicon controlled rectifier is conducted, drive voltage is input to the control electrode, the anode electrode and the output electrode are conducted at the moment, excitation connected with the anode electrode flows into the gate electrode through the output electrode, then the anode electrode and the cathode electrode are conducted, and the excitation can flow out through the anode electrode and the cathode electrode, so that the conduction control of the silicon controlled rectifier is realized.

Drawings

The invention has the following drawings:

fig. 1 is a schematic structural view of a thyristor of embodiment 1;

fig. 2 is a schematic structural view of a thyristor of embodiment 2;

FIG. 3 is a schematic diagram of a circuit for driving an SCR using an IGBT according to the present invention;

fig. 4 is a schematic diagram of a circuit of the present invention using MOSFETs to drive SCRs.

Detailed Description

The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic views illustrating only the basic structure of the present invention in a schematic manner, and thus show only the constitution related to the present invention.

As shown in figure 1, the controllable silicon driven by voltage comprises an N-type silicon wafer 1, wherein a P-type diffusion layer 6 is arranged at the bottom of the N-type silicon wafer 1, and the bottom of the P-type diffusion layer 6 is electrically connected with an anode electrode 12.

The top of the N-type silicon wafer 1 is provided with a first P well 2, at least one first N diffusion region 3 is arranged in the first P well 2, in the embodiment, two first N diffusion regions 3 are arranged in the first P well 2, the top of the N-type silicon wafer 1 is also provided with a second P well 4, and a second N diffusion region 5 is arranged in the second P well 4;

the top of the N-type silicon chip 1 is connected with an insulating layer 7, an output electrode 8 is arranged on the insulating layer 7, and the output electrode 8 penetrates through the insulating layer 7 to be electrically connected with the first P well 2 and the first N diffusion region 3 respectively;

a control electrode 9 is also arranged in the insulating layer 7, and the control electrode 9 is used for receiving a control signal A for driving the anode electrode 12 and the output electrode 8 to be conducted;

the insulating layer 7 is provided with a cathode electrode 11 and a gate electrode 10 at the corresponding position of the second P-well 4 respectively, the cathode electrode 11 and the gate electrode 10 are separated by the insulating layer 7, the cathode electrode 11 penetrates through the insulating layer 7 to be electrically connected with the second N-diffusion region 5, and the gate electrode 10 penetrates through the insulating layer 7 to be electrically connected with the second P-well 4, and is used for receiving a control signal B for driving the conduction of the anode electrode 12 and the cathode electrode 11.

Further, two first N diffusion regions 3 are disposed in parallel in the first P well 2.