阅读说明：本技术 制造石墨烯结构和装置的方法 (Methods of fabricating graphene structures and devices ) 是由 西蒙·托马斯 伊沃尔·吉尼 于 2019-01-10 设计创作，主要内容包括：本发明提供了用于生产具有1至100个石墨烯层的石墨烯层结构的方法,所述方法包括：将热阻等于或大于蓝宝石的热阻的基底设置在反应室中的加热的衬托器上,所述室具有复数个冷却的入口,所述复数个冷却的入口布置成使得在使用时入口跨基底分布并且相对基底具有恒定的间隔,通过入口供应包含前体化合物的流并使其进入反应室,从而使前体化合物分解并在基底上形成石墨烯,其中入口被冷却至低于100℃,优选50℃至60℃,并且衬托器被加热至超过前体的分解温度至少50℃的温度,使用激光从基底选择性地烧蚀石墨烯,其中激光的波长超过600nm并且功率小于50瓦。(The present invention provides a method for producing a graphene layer structure having 1 to 100 graphene layers, the method comprising: disposing a substrate having a thermal resistance equal to or greater than that of sapphire on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged such that, in use, the inlets are distributed across the substrate and at a constant spacing relative to the substrate, supplying a stream comprising a precursor compound through the inlets and into the reaction chamber to decompose the precursor compound and form graphene on the substrate, wherein the inlets are cooled to less than 100 ℃, preferably 50 ℃ to 60 ℃, and the susceptor is heated to a temperature at least 50 ℃ above the decomposition temperature of the precursor, selectively ablating graphene from the substrate using a laser, wherein the wavelength of the laser is in excess of 600nm and the power is less than 50 watts.)