阅读说明：本技术 一种半导体核辐射探测器及其制备方法和应用 (Semiconductor nuclear radiation detector and preparation method and application thereof ) 是由 张明智 王可 邹继军 朱志甫 邓文娟 田芳 于 2020-05-29 设计创作，主要内容包括：本发明适用于核辐射探测技术领域,提供了一种半导体核辐射探测器及其制备方法和应用,该制备方法包括以下步骤：用溴甲醇溶液对CsPbBr<Sub>3</Sub>单晶衬底的表面进行化学腐蚀处理；用氢溴酸溶液对化学腐蚀处理后的衬底的其中一面进行钝化处理,形成钝化层；对钝化层的中央部分进行刻蚀处理,形成刻蚀区域；在刻蚀区域上依次沉积第一内层金属电极、第一中层金属电极和第一外层金属电极；以及在衬底远离刻蚀区域一面上依次沉积第二内层金属电极、第二中层金属电极和第二外层金属电极,得到半成品；将半成品置于保护气氛下进行退火处理,得到半导体核辐射探测器。该半导体核辐射探测器可进行室温探测和无损探测,其具有探测极限低,方便携带等优点。(The invention is suitable for the technical field of nuclear radiation detection, and provides a semiconductor nuclear radiation detector and a preparation method and application thereof, wherein the preparation method comprises the following steps: bromomethanol solution for CsPbBr 3 Carrying out chemical corrosion treatment on the surface of the single crystal substrate; passivating one surface of the substrate subjected to the chemical corrosion treatment by using a hydrobromic acid solution to form a passivation layer; etching the central part of the passivation layer to form an etching area; depositing a first inner layer metal electrode, a first middle layer metal electrode and a first outer layer metal electrode on the etching area in sequence; depositing a second inner-layer metal electrode, a second middle-layer metal electrode and a second outer-layer metal electrode on one surface of the substrate far away from the etching area in sequence to obtain a semi-finished product; placing the semi-finished product in a protective atmosphere for annealing treatment to obtain a semiconductorA body nuclear radiation detector. The semiconductor nuclear radiation detector can be used for room temperature detection and nondestructive detection, and has the advantages of low detection limit, convenience in carrying and the like.)

1. A method for manufacturing a semiconductor nuclear radiation detector is characterized by comprising the following steps:

selection of CsPbBr₃A single crystal as a substrate;

carrying out chemical corrosion treatment on the surface of the substrate by using a bromomethanol solution to obtain a substrate subjected to chemical corrosion treatment;

passivating one surface of the substrate subjected to the chemical corrosion treatment by using a hydrobromic acid solution to form a passivation layer;

etching the central part of the passivation layer to form an etching area;

depositing a first inner layer metal electrode, a first middle layer metal electrode and a first outer layer metal electrode on the etching area in sequence; depositing a second inner layer metal electrode, a second middle layer metal electrode and a second outer layer metal electrode on one surface of the substrate after the chemical corrosion treatment, which is far away from the etching area, in sequence to obtain a semi-finished product;

and placing the semi-finished product in a protective atmosphere for annealing treatment to obtain the semiconductor nuclear radiation detector.

2. The method of claim 1, wherein the bromomethanol solution has a bromomethanol concentration of 3% to 7% by mass.

3. The method according to claim 1, wherein the hydrobromic acid solution has a pH of 4 to 5.

4. The method as claimed in claim 1, wherein the etching process is plasma etching.

5. The method according to claim 1, wherein the first inner metal electrode and the second inner metal electrode are both Ti electrodes; the first middle-layer metal electrode is a Pt electrode or an Ag electrode; the second middle-layer metal electrode is a Pt electrode or an Ag electrode; the first outer layer metal electrode is an Au electrode or an Al electrode; the second outer layer metal electrode is an Au electrode or an Al electrode.

6. The method for manufacturing a semiconductor nuclear radiation detector according to claim 5, wherein the thicknesses of the first inner layer metal electrode and the second inner layer metal electrode are respectively 10-30 nm; the thicknesses of the first middle layer metal electrode and the second middle layer metal electrode are respectively 30-50 nm; the thicknesses of the first outer layer metal electrode and the second outer layer metal electrode are 50-100 nm respectively.

7. A method of fabricating a semiconductor nuclear radiation detector according to claim 1, wherein the protective atmosphere is an Ar atmosphere.

8. The method according to claim 1, wherein the annealing temperature is 60-100 ℃.

9. A semiconductor nuclear radiation detector manufactured by the manufacturing method according to any one of claims 1 to 8.

10. Use of a semiconductor nuclear radiation detector according to claim 9 in nuclear radiation detection.

Technical Field

The invention belongs to the technical field of nuclear radiation detection, and particularly relates to a semiconductor nuclear radiation detector and a preparation method and application thereof.

Background

Energy, especially novel energy, has been a research hotspot and a research difficulty in the scientific and industrial fields as indispensable power for the development of the modern civilized society. Among them, nuclear energy is one of the first choices of future energy due to its abundant energy storage as the most efficient and abundant clean energy in the present society. However, the enormous destructive power of nuclear energy also makes the general public "talk about nuclear discoloration" and "avoid nuclear distance". Therefore, how to do the nuclear detection and the nuclear detection work is the essential prerequisite work for peacefully developing the nuclear energy. The nuclear detection technology is an important key technology for nuclear detection and nuclear monitoring, and the reliability, sensitivity, anti-interference characteristic and other properties of nuclear radiation detection equipment and instruments directly influence the safety of lives and properties, so that the nuclear radiation detection equipment and the instruments are indispensable tools in the process of peacefully developing nuclear energy.

At present, the wide-bandgap semiconductor nuclear radiation detector represented by CdTeZn and T1Br is researched and developed, and the detector can meet the performance requirements of high resolution and high detection efficiency through years of research, but Te component segregation in CdTeZn and ion polarization in TlBr always become the difficult problems which restrict the application development of the detector and are difficult to exceed. The shortcomings of conventional nuclear radiation detectors have led to the development of a new type of high detection capability nuclear detector. In order to solve the above problems, the development of a novel semiconductor nuclear radiation detector that can be used at room temperature is not slow.

Disclosure of Invention

An embodiment of the present invention is directed to a method for manufacturing a semiconductor nuclear radiation detector, which aims to solve the problems in the background art.

The embodiment of the invention is realized in such a way that the preparation method of the semiconductor nuclear radiation detector comprises the following steps:

selection of CsPbBr₃A single crystal as a substrate;

carrying out chemical corrosion treatment on the surface of the substrate by using a bromomethanol solution to obtain a substrate subjected to chemical corrosion treatment;

passivating one surface of the substrate subjected to the chemical corrosion treatment by using a hydrobromic acid solution to form a passivation layer;

etching the central part of the passivation layer to form an etching area;

depositing a first inner layer metal electrode, a first middle layer metal electrode and a first outer layer metal electrode on the etching area in sequence; depositing a second inner layer metal electrode, a second middle layer metal electrode and a second outer layer metal electrode on one surface of the substrate after the chemical corrosion treatment, which is far away from the etching area, in sequence to obtain a semi-finished product;

and placing the semi-finished product in a protective atmosphere for annealing treatment to obtain the semiconductor nuclear radiation detector.

As a preferable scheme of the embodiment of the present invention, the mass percentage concentration of bromomethanol in the bromomethanol solution is 3% to 7%.

In another preferable embodiment of the invention, the pH of the hydrobromic acid solution is 4-5.

As another preferable scheme of the embodiment of the present invention, in the step, the etching method is a plasma etching method.

As another preferable scheme of the embodiment of the present invention, both the first inner-layer metal electrode and the second inner-layer metal electrode are Ti electrodes; the first middle-layer metal electrode is a Pt electrode or an Ag electrode; the second middle-layer metal electrode is a Pt electrode or an Ag electrode; the first outer layer metal electrode is an Au electrode or an Al electrode; the second outer layer metal electrode is an Au electrode or an Al electrode.

As another preferable scheme of the embodiment of the invention, the thicknesses of the first inner layer metal electrode and the second inner layer metal electrode are respectively 10-30 nm; the thicknesses of the first middle layer metal electrode and the second middle layer metal electrode are respectively 30-50 nm; the thicknesses of the first outer layer metal electrode and the second outer layer metal electrode are 50-100 nm respectively.

As another preferable scheme of the embodiment of the present invention, the protective atmosphere is an Ar atmosphere.

In another preferable scheme of the embodiment of the invention, in the step, the temperature of the annealing treatment is 60-100 ℃.

Another object of an embodiment of the present invention is to provide a semiconductor nuclear radiation detector manufactured by the above manufacturing method.

Another object of an embodiment of the present invention is to provide a use of the above semiconductor nuclear radiation detector in nuclear radiation detection.

Among them, CsPbBr is a typical example of all-inorganic perovskite, compared with CdZnTe and TlBr₃The following excellent performances are provided: a high average atomic number, a high density, a large forbidden band width (2.25eV), and a high resistivity (1011. OMEGA. multidot.cm). Especially CsPbBr₃Respectively, the electron and hole of (2) are 1.7 × 10^-3And 1.3 × 10^-3cm²The electron lifetime of the material is even 2.54 mu s; furthermore, CsPbBr₃Also has the advantages of lower melting point (567 ℃), easy melt growth and the like.

The embodiment of the invention provides a preparation method of a semiconductor nuclear radiation detector, which is characterized in that CsPbBr is used₃The single crystal is taken as a substrate, and a multilayer fully-symmetrical and semi-symmetrical composite metal electrode structure is deposited, so that the semiconductor nuclear radiation detector with high detection performance and high stability can be manufactured. The semiconductor nuclear radiation detector can be used for room temperature detection and nondestructive detection, has the advantages of low detection limit, convenience in carrying and the like, and can be widely applied to various nuclear detection fields. Specifically, the inner layer metal electrode and CsPbBr₃The substrate layers have excellent ohmic contact performance; the middle layer metal electrode has excellent thermal stability; the outer layer metal electrode has excellent conductivity; the effective charge collection efficiency can be obviously improved through the multilayer metal composite structure type electrode, so that the nuclear radiation of the semiconductor can be enhancedThe detection sensitivity and detection efficiency of the radiation detector to X-rays, α particles and gamma rays.

Drawings

Fig. 1 is a process schematic diagram of a manufacturing method of a semiconductor nuclear radiation detector according to an embodiment of the present invention.

FIG. 2 shows Au/Pt/Ti/CsPbBr prepared in example 1 of the present invention₃Schematic structural diagram of a semiconductor nuclear radiation detector of the type/Ti/Pt/Au.

FIG. 3 shows Au/Pt/Ti/CsPbBr prepared in example 2 of the present invention₃Schematic structural diagram of a semiconductor nuclear radiation detector of the type/Ti/Ag/Au.

FIG. 4 shows Au/Pt/Ti/CsPbBr prepared in example 1 of the present invention₃Semiconductor nuclear radiation detector pair of the type/Ti/Pt/Au²⁴¹Am (α particles).

In the figure: 1-a substrate; 2-a passivation layer; 3-a Ti electrode; a 4-Pt electrode; a 5-Au electrode; 6-Ag electrode.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.