阅读说明：本技术 核壳式结构GaN结型场效应管器件及其制备方法 (Core-shell structure GaN junction field effect transistor device and preparation method thereof ) 是由 邵鹏飞 郭慧 陈敦军 谢自力 于 2020-05-14 设计创作，主要内容包括：本发明公开了一种核壳式结构GaN结型场效应管器件及其制备方法。该方法首先利用MBE/MOCVD技术在蓝宝石衬底生长第二重掺n-GaN层,作为后续的漏端欧姆接触层,再继续外延核壳式纳米柱状p-n结,内层n-GaN为沟道层,最后再外延一层重掺的n-GaN作为源端欧姆接触层。器件结构生长完后再利用刻蚀和电极蒸发工艺形成源漏极和栅极,得到GaN-JFET器件；核壳式p-n结结构因沟道被环形包夹,其内部电场分布更均匀,栅对沟道具有更强的控制能力。(The invention discloses a core-shell structure GaN junction field effect transistor device and a preparation method thereof. The method comprises the steps of firstly growing a second heavily doped n-GaN layer on a sapphire substrate by using an MBE/MOCVD technology to serve as a subsequent drain-end ohmic contact layer, then continuing to epitaxially grow a core-shell type nano columnar p-n junction, taking the inner layer n-GaN as a channel layer, and finally epitaxially growing a layer of heavily doped n-GaN as a source-end ohmic contact layer. After the device structure grows, a source drain and a grid are formed by etching and electrode evaporation processes to obtain a GaN-JFET device; the core-shell type p-n junction structure has the advantages that the channel is annularly wrapped, the electric field distribution in the core-shell type p-n junction structure is more uniform, and the grid has stronger control capability on the channel.)

技术领域

本发明涉及一种核壳式结构GaN结型场效应管器件，属于半导体器件领域。

背景技术

结型场效应晶体管是构成互补晶体管逻辑电路、电流感测放大器、模数转换器驱动器、光电二极管跨阻放大器等电路或装置中的核心器件，这些电路或装置在电力传输、交通运输、消费电子等领域有重要应用。GaN基场效应晶体管因具有工作频率高、导通电阻低、功率密度高、耐击穿电压高等优势，在可变电阻和功放领域具有重要应用前景。传统的结型场效应晶体管(JFET)需要利用再生长或离子注入工艺来实现p-n结，制备工艺较为复杂。