阅读说明：本技术 一种led结构及led阵列的巨量转移方法 (L ED structure and L ED array mass transfer method ) 是由 刘鉴明 柯志杰 谈江乔 黄青青 柯毅东 于 2020-04-27 设计创作，主要内容包括：本申请实施例提供了一种LED结构及其LED阵列的巨量转移方法,该方法利用光感应材料层覆盖LED阵列背离第二衬底一侧表面,并填充LED阵列中相邻LED之间的间隙,从而使得光感应材料层既可以作为LED阵列与第一衬底之间的键合层,又可以作为填充相邻LED之间缝隙的牺牲层,并且通过预设光线对光感应材料层的第一区域照射进行去除,保留光感应材料层的第二区域作为链条图形层,无需额外制备链条图形层,从而简化了LED阵列的巨量转移过程中的工艺步骤,还避免了键合层和牺牲层以及链条图形层和牺牲层采用不同材料时的材料不兼容问题,降低了所述LED巨量转移过程中的成本和工艺难度。(The embodiment of the application provides an L ED structure and a huge transfer method of a L ED array thereof, the method utilizes a light-sensitive material layer to cover a surface of a L ED array on a side away from a second substrate and fills a gap between adjacent L EDs in the L ED array, so that the light-sensitive material layer can be used as a bonding layer between a L ED array and a first substrate and also can be used as a sacrificial layer for filling a gap between adjacent L EDs, a first area of the light-sensitive material layer is removed by preset irradiation of light, a second area of the light-sensitive material layer is reserved as a chain pattern layer, and no chain pattern layer is required to be additionally prepared, so that process steps in the huge transfer process of the L ED array are simplified, the problem of incompatibility of materials when the bonding layer and the sacrificial layer, and the chain pattern layer and the sacrificial layer adopt different materials is avoided, and the cost and process difficulty in the huge transfer process of the L ED array are reduced.)

1. A mass transfer method for L ED arrays, comprising:

forming a light sensing material layer covering L ED arrays on a first side of an L ED array structure, wherein the L ED array structure comprises a second substrate and L ED arrays on the first side of the second substrate, the light sensing material layer covers the surface of the L ED arrays on the side facing away from the second substrate and fills gaps between adjacent L ED in the L ED arrays, and the light sensing material layer is decomposed under the irradiation of preset light;

bonding a first substrate with the layer of photo-sensing material on a side of the layer of photo-sensing material facing away from the L ED array;

removing the second substrate, and forming a first mask on the side of the first substrate, which faces away from the L ED array;

irradiating the light-induced material layer by using the preset light beam by using the first mask as a mask until the first area of the light-induced material layer is removed, and reserving the second area of the light-induced material layer;

wherein the second region of the photo-sensing material layer includes a first component perpendicular to the first substrate and forming a structure having a plurality of grooves after being combined with the first substrate, and a second component located in the grooves and extending from sidewalls of the grooves toward centers of the grooves, and the L ED is fixed in the grooves by the second component with a gap from the first substrate.

2. The mass transfer method according to claim 1, further comprising:

forming a second mask on one side, away from the first substrate, of the second area of the light sensing material layer;

and irradiating a second component of the second area of the light-sensing material layer by using the preset light by using the second mask as a mask, removing part of the thickness of the second component of the light-sensing material layer, and reserving part of the thickness of the second component.

3. The mass transfer method according to claim 2, wherein the thickness of the second component retention portion ranges from 0.5 μ ι η to 2 μ ι η inclusive.

4. The mass transfer method according to claim 2, wherein a pattern of a portion of said first reticle located in said recess is complementary to a pattern of a portion of said second reticle located in said recess.

5. The mass transfer method according to any one of claims 1-4, wherein the predetermined light is an ultraviolet laser.

6. The mass transfer method of claim 1, wherein forming a layer of photo-sensing material on a first side of an L ED array structure covering L ED arrays comprises:

a laser sensitive material was spun on the first side of the L ED array structure to form a layer of light sensitive material covering L ED array.

7. The bulk transfer method of claim 1, wherein removing the second substrate comprises: and removing the second substrate by using a laser stripping process.

8. The mass transfer method according to claim 1, further comprising:

grabbing each L ED of the L ED array from a side of the L ED array facing away from the first substrate.

9. An L ED structure, comprising:

a first substrate;

a photo-sensing structure on a first side of the first substrate, the photo-sensing structure comprising a first component perpendicular to the first substrate and forming a structure having a plurality of recesses in combination with the first substrate, and a plurality of second components within the recesses extending from at least a portion of the sidewalls of the recesses toward the center of the recesses;

an L ED array located on a first side of the first substrate, the L ED array including a plurality of L EDs, the L EDs located within the grooves in one-to-one correspondence with the grooves and secured within their corresponding grooves by the second component;

wherein the L ED electrode is toward the first substrate and the L ED electrode has a gap with the first substrate.

10. The L ED structure of claim 9, wherein a thickness of the second component in a range of 0.5 to 2 μm, inclusive, in a direction L ED toward the first substrate.

11. The L ED structure of claim 9, wherein the groove includes a first sidewall, a second sidewall, a third sidewall, and a fourth sidewall, the second component including:

a first protrusion formed by extending at least a partial region of the first sidewall toward a center of the groove;

a second protrusion formed by extending at least a partial region of the second sidewall toward the center of the groove;

a third protrusion formed by extending at least a partial region of the third sidewall toward the center of the groove;

a fourth protrusion formed by extending at least a partial region of the fourth sidewall toward a center of the groove.