阅读说明：本技术 一种基于氧化镓的集成器件 (Integrated device based on gallium oxide ) 是由 卢星 王钢 陈梓敏 于 2020-05-08 设计创作，主要内容包括：本发明公开了一种基于氧化镓的集成器件,涉及半导体集成领域。针对现有技术中没有基于氧化镓材料的单一芯片同时集成压电谐振器和晶体管的技术空缺而提出本方案。包括并列设置的压电谐振器区和晶体管区；晶体管区和压电谐振器区分设在同一氧化镓层的两侧,氧化镓层在压电谐振器区设有电极对,电极对与氧化镓层电性连接,电极对中的任一电极与晶体管区中的源极电性连接。优点在于,通过采用氧化镓半导体,在一块芯片上同时制得晶体管和压电谐振器,实现射频前端中的射频信号放大电路和射频滤波器的单片集成化技术基础,具有高性能、低损耗、高可靠性、体积小和成本低的优点。尤其适用于射频技术的前端设备。(The invention discloses an integrated device based on gallium oxide, and relates to the field of semiconductor integration. The scheme is provided aiming at the technical vacancy that a single chip based on gallium oxide materials simultaneously integrates a piezoelectric resonator and a transistor in the prior art. The piezoelectric resonator comprises a piezoelectric resonator area and a transistor area which are arranged in parallel; the transistor area and the piezoelectric resonator area are arranged on two sides of the same gallium oxide layer, the gallium oxide layer is provided with an electrode pair in the piezoelectric resonator area, the electrode pair is electrically connected with the gallium oxide layer, and any electrode in the electrode pair is electrically connected with a source electrode in the transistor area. The piezoelectric resonator and the radio frequency signal amplifying circuit have the advantages that by adopting the gallium oxide semiconductor, the transistor and the piezoelectric resonator are simultaneously manufactured on one chip, the single-chip integration technical basis of the radio frequency signal amplifying circuit and the radio frequency filter in the radio frequency front end is realized, and the piezoelectric resonator has the advantages of high performance, low loss, high reliability, small size and low cost. The method is particularly suitable for the front-end equipment of the radio frequency technology.)

1. An integrated device based on gallium oxide comprises a piezoelectric resonator area and a transistor area which are arranged in parallel; the piezoelectric gallium oxide resonator is characterized in that the transistor area and the piezoelectric resonator area are arranged on two sides of the same gallium oxide layer (103), the gallium oxide layer (103) is provided with an electrode pair in the piezoelectric resonator area, the electrode pair is electrically connected with the gallium oxide layer (103), and any electrode in the electrode pair is electrically connected with a source electrode (110) in the transistor area.

2. The gallium oxide-based integrated device according to claim 1, wherein the gallium oxide layer (103) has a thickness of 0.1um to 20 um.

3. The gallium oxide-based integrated device according to claim 1, wherein the gallium oxide layer (103) is composed of single-phase gallium oxide.

4. The gallium oxide-based integrated device according to claim 1, wherein the electrode pair comprises a first electrode (106) and a second electrode (107), the first electrode (106) is disposed on the upper surface of the gallium oxide layer (103), and the second electrode (107) is disposed on the lower surface of the gallium oxide layer (103); the transistor area is provided with a through hole which is arranged below the source electrode (110) and penetrates to the bottom of the device; at least one end of the second electrode (107) penetrates through the through hole and is electrically connected with the source electrode (110).

5. The integrated device based on gallium oxide according to claim 1, wherein the electrode pair comprises a first electrode (106) and a second electrode (107) that are interdigitated electrodes, the first electrode (106) and the second electrode (107) are disposed on the upper surface of the gallium oxide layer (103), and at least one end of the second electrode (107) extends into the transistor region and is electrically connected to the source electrode (110).

6. An integrated device based on gallium oxide according to any one of claims 1 to 5, characterized in that a substrate (101), a buffer layer (102), a gallium oxide layer (103) are stacked in this order from bottom to top; the buffer layer (102) and the substrate (101) are provided with cavities in the piezoelectric resonator area, and the gallium oxide layer (103) is provided with electrode pairs at the corresponding positions of the cavities; the upper surface of the gallium oxide layer (103) is also provided with a channel layer (104) in a transistor area in a stacking mode, one end, close to the piezoelectric resonator area, of the upper surface of the channel layer (104) is provided with a source electrode (110), the other end of the upper surface of the channel layer is provided with a drain electrode (109), and a grid electrode (108) is arranged between the source electrode (110) and the drain electrode (109).

7. An integrated device based on gallium oxide according to claim 6, wherein the gate (108) is located at a distance from the source (110) less than the distance from the drain (109).

8. The gallium oxide-based integrated device according to claim 6, wherein the channel layer (104) further comprises a barrier layer (105) on the upper surface thereof under the source electrode (110), the gate electrode (108), and the drain electrode (109).

9. The gallium oxide-based integrated device according to claim 6, wherein the gate (108) is a T-shaped structure.

Technical Field

The invention relates to the field of semiconductor integration, belongs to a new generation of information technology, and particularly relates to an integrated device based on gallium oxide.

Background

With the advent of big data and the internet of things, the radio frequency communication technology is rapidly developed and widely applied. The radio frequency front end is a key component of communication equipment, is increasingly complex along with the upgrading of a communication system, and simultaneously faces the challenges of miniaturization, high efficiency, high reliability and low cost. The radio frequency signal amplifying circuit and the radio frequency filter are two indispensable components for constructing a radio frequency front end, wherein the radio frequency signal amplifying circuit comprises a power amplifier, a low noise amplifier and the like and is made of a semiconductor transistor; whereas radio frequency filters are usually implemented by piezoceramic resonators. Currently, in the mainstream rf front end, the amplifier circuit and the filter are two separate chips. There are the following problems: 1. the two independent chips cannot be integrated due to incompatible materials, so that the miniaturization of the system is not facilitated; 2. parasitic problems caused by multi-chip assembly can increase system power consumption and failure risks, and are not beneficial to improving the efficiency and reliability of equipment; 3. multi-chip assembly also does not facilitate further reduction in production costs.

On the other hand, gallium oxide is a new generation of ultra-wide bandgap semiconductor material, has the outstanding advantages of large forbidden bandwidth, high breakdown field strength, high electron saturation drift velocity, corrosion resistance, high temperature resistance, radiation resistance and the like, is a preferred material for preparing electronic devices with high frequency, high power, high temperature resistance, radiation resistance and the like, and has great application potential in the field of future radio frequency communication. The gallium oxide single crystal of the phase has a hexagonal symmetrical structure, has extremely strong piezoelectric polarization characteristics, can maintain the piezoelectric performance in a wider temperature range, and is very suitable for preparing a thin film piezoelectric resonator device with high frequency, low loss and high stability.

There is currently no specific application of gallium oxide materials to devices integrated in piezoelectric resonant and amplification circuits.

Disclosure of Invention

The invention aims to provide a gallium oxide-based integrated device to realize the simultaneous integration of a piezoelectric resonator and a transistor in a bulk chip.

The invention relates to an integrated device based on gallium oxide, which comprises a piezoelectric resonator area and a transistor area which are arranged in parallel; the transistor area and the piezoelectric resonator area are arranged on two sides of the same gallium oxide layer, the gallium oxide layer is provided with an electrode pair in the piezoelectric resonator area, the electrode pair is electrically connected with the gallium oxide layer, and any electrode in the electrode pair is electrically connected with a source electrode in the transistor area.

The integrated device based on the gallium oxide has the advantages that the gallium oxide semiconductor is adopted, the transistor and the piezoelectric resonator are simultaneously manufactured on one chip, the single-chip integration technical basis of a radio-frequency signal amplifying circuit and a radio-frequency filter in the radio-frequency front end is realized, and the integrated device based on the gallium oxide has the advantages of high performance, low loss, high reliability, small volume and low cost. In addition, the integrated device is compatible with the preparation process of the conventional gallium oxide electronic device, and the method is simple and reliable, so that the low cost is ensured.

The thickness of the gallium oxide layer is 0.1um to 20 um. The purpose is to disclose preferred value ranges.

The gallium oxide layer is composed of single-crystal phase gallium oxide. The aim is to disclose a preferred gallium oxide crystalline selection.

The electrode pair comprises a first electrode and a second electrode, the first electrode is arranged on the upper surface of the gallium oxide layer, and the second electrode is arranged on the lower surface of the gallium oxide layer; a through hole penetrating to the bottom of the device is arranged below the source electrode in the transistor area; at least one end of the second electrode penetrates through the through hole and is electrically connected with the source electrode.

The electrode pair comprises a first electrode and a second electrode which are interdigital electrodes, the first electrode and the second electrode are both arranged on the upper surface of the gallium oxide layer, and at least one end of the second electrode extends into the transistor area and is electrically connected with the source electrode. And providing another realization structure of the electrode pair.

Sequentially stacking a substrate, a buffer layer and a gallium oxide layer from bottom to top; the buffer layer and the substrate are provided with cavities in the piezoelectric resonator area, and the gallium oxide layer is provided with electrode pairs at the corresponding positions of the cavities; and the upper surface of the gallium oxide layer is also provided with a channel layer in a stacked manner in the transistor area, one end of the upper surface of the channel layer, which is close to the piezoelectric resonator area, is provided with a source electrode, the other end of the upper surface of the channel layer is provided with a drain electrode, and a grid electrode is arranged between the source electrode and the drain electrode. In providing a specific laminated structure.

The distance between the grid and the source is smaller than that between the grid and the drain. The transistor has the advantages of reducing parasitic resistance between the source electrode and the grid electrode and improving the withstand voltage between the drain electrode and the grid electrode, thereby obtaining the high frequency and high power performance of the transistor to the maximum extent.

The upper surface of the channel layer is also provided with a barrier layer below the source electrode, the grid electrode and the drain electrode. The channel carrier concentration and the mobility of the transistor can be improved, and further higher working frequency and larger output current can be obtained.

The grid is of a T-shaped structure. The method has the advantages that the length of the grid is reduced, and simultaneously, lower grid resistance is obtained, so that the transistor has high frequency and high power.

Drawings

Fig. 1 is a schematic structural diagram of a first embodiment of the gallium oxide-based integrated device according to the present invention.

Fig. 2 is a schematic structural diagram of a second embodiment of the gallium oxide-based integrated device according to the present invention.

Fig. 3 is a schematic structural diagram of a third embodiment of the gallium oxide-based integrated device according to the present invention.

Fig. 4 is a schematic structural diagram of a fourth embodiment of the gallium oxide-based integrated device according to the present invention.

Fig. 5 is a top view of a piezoelectric resonator region of the present invention.

Reference numerals: 101-substrate, 102-buffer layer, 103-gallium oxide layer, 104-channel layer, 105-barrier layer, 106-first electrode, 107-second electrode, 108-gate, 109-drain, 110-source.

Detailed Description