阅读说明：本技术 薄膜体声波谐振滤波器装配使用方法及电子设备 (Method for assembling and using film bulk acoustic wave resonant filter and electronic equipment ) 是由 张磊 余怀强 邓立科 王玺 蒋明眼 于 2021-07-27 设计创作，主要内容包括：本申请提供一种薄膜体声波谐振滤波器装配使用方法及电子设备,包括：根据薄膜体声波谐振滤波器芯片电路模型和接地电路构建出滤波器装配之后的等效电路模型；利用三维电磁仿真软件对滤波器的接地电路进行建模、仿真、计算,分别提取出接地电路中接地焊盘以及接地键合线所对应的寄生参数,寄生参数包括接地键合线的寄生电感以及接地焊盘的寄生电容和寄生电感；将寄生参数带回等效电路中,利用仿真软件得到该种接地装配方式下滤波器的带外抑制和通带带宽。通过改变接地键合线的材质、直径、数量及键合弧度等参数调节接地键合线的寄生电感,将不同装配方式下的寄生电感分别带入滤波器的等效电路中,能够快速得到性能最佳的滤波器装配方式,从而缩短滤波器的调试时间。(The application provides a film bulk acoustic wave resonator filter assembly and use method and electronic equipment, including: constructing an equivalent circuit model after the filter is assembled according to the thin film bulk acoustic wave resonant filter chip circuit model and the grounding circuit; modeling, simulating and calculating a grounding circuit of the filter by using three-dimensional electromagnetic simulation software, and respectively extracting parasitic parameters corresponding to a grounding bonding pad and a grounding bonding wire in the grounding circuit, wherein the parasitic parameters comprise parasitic inductance of the grounding bonding wire, parasitic capacitance and parasitic inductance of the grounding bonding pad; and (4) bringing the parasitic parameters back to the equivalent circuit, and obtaining the out-of-band rejection and the passband bandwidth of the filter in the grounding assembly mode by using simulation software. The parasitic inductance of the grounding bonding wire is adjusted by changing the material, diameter, number, bonding radian and other parameters of the grounding bonding wire, and the parasitic inductances under different assembly modes are respectively brought into the equivalent circuit of the filter, so that the assembly mode of the filter with the best performance can be quickly obtained, and the debugging time of the filter is shortened.)

1. A method of assembling and using a film bulk acoustic resonator filter, comprising:

constructing an equivalent circuit model after the filter is assembled according to the thin film bulk acoustic wave resonant filter chip circuit model and the grounding circuit; the filter chip circuit model is obtained by simulating a plurality of resonators through different architecture designs, the grounding circuit is composed of parasitic capacitance and parasitic inductance of a grounding bonding pad on the surface of the filter chip and parasitic inductance of a grounding bonding wire, the grounding circuit of the resonator bonded and grounded by the grounding bonding wire is the same, and the grounding circuit is composed of the parasitic capacitance of the grounding bonding pad, the parasitic inductance after being connected in series and the parasitic inductance of the grounding bonding wire in parallel;

modeling, simulating and calculating a grounding circuit of the filter by using three-dimensional electromagnetic simulation software, and respectively extracting parasitic parameters corresponding to a grounding bonding pad and a grounding bonding wire in the grounding circuit;

feeding back the parasitic parameters of the grounding circuit to an equivalent circuit model after the filter is assembled, and obtaining S parameters of the filter by using simulation software;

optimizing S parameter performance of the filter by adjusting parasitic parameters of the grounding circuit, wherein the S parameter performance comprises filter out-of-band rejection and passband bandwidth;

the optimal assembly mode of the film bulk acoustic wave resonant filter is obtained by comparing the performance of the filter so as to guide the assembly of the filter.

2. The method for assembling and using a film bulk acoustic resonator filter according to claim 1, further comprising: and calculating the parasitic capacitance of the grounding pad by using a plate capacitance formula.

3. The method for assembling and using a film bulk acoustic resonator filter according to claim 1, further comprising: and modeling and simulating the grounding pad by using simulation software to obtain the resonant frequency of the grounding pad.

4. The method for assembling and using a film bulk acoustic resonator filter according to claim 1, further comprising: calculating to obtain the parasitic capacitance of the grounding pad and the resonant frequency obtained by simulation, and calculating formula by using LC resonant frequencyWherein f is frequency in hertz (Hz); l is inductance in Henry (H); c is capacitance, in farads (F), to determine the parasitic inductance of the ground pad.

5. The method for assembling and using a film bulk acoustic resonator filter according to claim 1, further comprising: constructing a three-dimensional electromagnetic simulation model of the grounding circuit by using electromagnetic field simulation software, and obtaining the resonant frequency f of the grounding circuit through electromagnetic field simulation₀. An equivalent calculation model of a grounding circuit is established by utilizing circuit simulation software, a parasitic capacitance value and a parasitic inductance value of the grounding pad are input into the equivalent calculation model, and the resonance frequency f obtained by the equivalent calculation model is enabled to be obtained by adjusting the parasitic inductance value of a grounding bonding wire in the equivalent calculation model₁Gradually approaches the resonant frequency f of the grounding circuit obtained by the simulation of the three-dimensional electromagnetic simulation model₀When f is₁And f₀When the difference value is converged to a preset precision value, the corresponding inductance value of the equivalent calculation model is the parasitic inductance of the grounding bonding wire.

6. The method for assembling and using a film bulk acoustic resonator filter according to claim 1, further comprising: the parasitic capacitance and the parasitic inductance of the grounding bonding pad are adjusted by changing the design of the grounding bonding pad of the filter chip, and the parasitic inductance of the grounding bonding wire is adjusted by changing one or more of the material, the diameter, the number and the radian of the bonding wire.

7. The method for assembling and using a film bulk acoustic wave resonator filter according to claim 1 or 6, further comprising: the parasitic inductance of the grounding bonding wires is gradually reduced along with the increment of the number of the grounding bonding wires, and the transmission zero point or the passband bandwidth of the film bulk acoustic wave resonant filter is changed.

8. An electronic device, comprising: a thin film bulk acoustic resonator filter obtained by using the thin film bulk acoustic resonator filter assembly method according to any one of claims 1 to 7.

Technical Field

The present invention relates to radio frequency technology and filter technology, and more particularly, to a method for assembling and using a film bulk acoustic resonator filter and an electronic device.

Background

The multifunctional development of the wireless communication terminal puts high technical requirements on miniaturization, high frequency, high performance, low power consumption, low cost and the like on a radio frequency device. The traditional surface acoustic wave filter (SAW) has large insertion loss in a high frequency band above 2.4GHz, and the dielectric filter has good performance but large volume. The Film Bulk Acoustic Resonator (FBAR) filter technology is a radio frequency device with more excellent performance which appears along with the improvement of the processing technology level and the rapid development of the modern wireless communication technology in recent years. The filter has the advantages of extremely high quality factor Q value (more than 1000) and being capable of being integrated on an IC chip, and can be compatible with a Complementary Metal Oxide Semiconductor (CMOS) process, thereby effectively avoiding the defect that a surface acoustic wave resonant filter and a dielectric resonant filter can not be compatible with the CMOS process.

In the research and design manufacturing of FBAR filters, wire bonding is usually used to electrically connect FBAR filters on a silicon substrate. However, wire bonding has an influence on the out-of-band filtering performance of the FBAR filter, for example, the suppression of the transmission zero frequency of a specific interference signal, and at present, when the FBAR filter is wire-bonded and packaged, the target performance is often obtained by continuous debugging according to historical experience, and there are disadvantages that the debugging workload is large, the debugging efficiency is low, the optimal performance cannot be achieved due to the non-design, and repeated debugging is required for different filter designs, and therefore, there is a need for an FBAR filter assembly and use method capable of achieving the specified filtering performance and guiding the wire-bonded package parameters.

Content of application

In view of the above drawbacks of the prior art, an object of the present application is to provide a method for assembling and using a film bulk acoustic resonator filter and an electronic device, which are used to solve the problems that, when an FBAR filter in the prior art is assembled and used, the debugging workload is large, the debugging efficiency is low, the FBAR filter cannot be designed, the optimal performance is difficult to achieve, and repeated debugging is required for different filter designs.

To achieve the above and other related objects, a first aspect of the present application provides a method for assembling and using a thin film bulk acoustic resonator filter, including:

step S1, constructing an equivalent circuit model after the filter is assembled according to the chip circuit model of the film bulk acoustic wave resonant filter and the grounding circuit; the filter chip circuit model is formed by a plurality of resonators through different architecture design simulation, wherein the grounding circuit comprises the parasitic capacitance and the parasitic inductance of a grounding bonding pad on the surface of a filter chip and the parasitic inductance of a grounding bonding wire;

step S2, modeling, simulating and calculating the grounding circuit of the filter by using three-dimensional electromagnetic simulation software, and respectively extracting parasitic parameters corresponding to a grounding pad and a grounding bonding wire in the grounding circuit;

step S3, feeding back the parasitic parameters of the grounding circuit to an equivalent circuit model after the filter is assembled, and obtaining S parameters of the filter by using simulation software;

step S4, optimizing S parameter performance of the filter by adjusting parasitic parameters of the grounding circuit, wherein the S parameter performance comprises filter out-of-band rejection and passband bandwidth;

and step S5, obtaining the best assembly mode of the film bulk acoustic wave resonance filter by comparing the performances of the filter under different assembly modes so as to guide the assembly of the filter.

Another object of the present invention is to provide an electronic device including a thin film bulk acoustic resonator filter obtained by using the above thin film bulk acoustic resonator filter assembly using method.

As described above, the method for assembling and using the film bulk acoustic wave resonator filter and the electronic device according to the present application have the following advantages:

the method includes the steps that an equivalent model of a film bulk acoustic wave resonance filter with parasitic inductance and parasitic capacitance of a grounding circuit is established, and the filter with grounding bonding wires of different configurations is simulated; the parasitic inductance of the grounding bonding wire is adjusted to enable the film bulk acoustic wave resonant filter to achieve specified out-of-band rejection or pass band bandwidth optimization, so that the film bulk acoustic wave resonant filter with a specified waveform is obtained, and the assembly efficiency and the performance of the film bulk acoustic wave resonant filter are improved; meanwhile, aiming at the performance simulation and emulation work of the FBAR, an important theoretical basis is provided for realizing the assembly of the device.

Drawings

FIG. 1 is a flow chart illustrating a method of assembling and using a thin film bulk acoustic resonator filter according to the present application;

fig. 2 is a schematic structural diagram of a thin film bulk acoustic resonator filter based on a ladder topology structure according to the present application;

3-a, 3-b, and 3-c are schematic diagrams illustrating the thin film bulk acoustic resonator filter provided by the present application after being connected to a ground bonding wire;

4-a, 4-b, 4-c, and 4-d respectively show simulation model diagrams after a thin film bulk acoustic resonator filter provided by the present application is connected to a ground bonding wire;

FIG. 5 shows a simulation of a thin film bulk acoustic resonator filter with different ground bond lines provided for the present application;

fig. 6 shows a simulation diagram of connecting different ground bonding lines for a thin film bulk acoustic resonator filter provided by the present application.

Detailed Description

The following description of the embodiments of the present application is provided by way of specific examples, and other advantages and effects of the present application will be readily apparent to those skilled in the art from the disclosure herein. The present application is capable of other and different embodiments and its several details are capable of modifications and/or changes in various respects, all without departing from the spirit of the present application. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict.

It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present application, and the drawings only show the components related to the present application and are not drawn according to the number, shape and size of the components in actual implementation, and the type, number and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.

FBARs are devices having a piezoelectric effect material and a structure capable of forming an (inverse) piezoelectric effect structure, and are manufactured by using a silicon substrate, a Micro Electro Mechanical System (MEMS) technology, and a thin film technology. The FBAR works on the principle that, in the core part of a "sandwich" structure of electrodes-piezoelectric material-electrodes, the piezoelectric material is deformed by applying a voltage to the electrodes, and when an alternating voltage is applied, the structure has an inverse piezoelectric effect. In the process, electric energy is converted into mechanical energy, the mechanical energy is transmitted in the structure through sound waves, vibration is caused, and meanwhile, an electric signal is generated through vibration, namely, the mechanical energy is converted into the electric energy through the piezoelectric effect, and the electric signal is output. The piezoelectric effect and the inverse piezoelectric effect exist at the same time, interact with each other and can generate resonance in the interaction process, so that the signal is selected.

ADS (advanced Design system) is an EDA tool specially developed by Agilent corporation, is a radio frequency microwave circuit and communication system simulation software, and can conveniently and quickly simulate FBAR by a user by means of the strong circuit simulation function of the ADS.

HFSS (high Frequency Structure simulator) is three-dimensional electromagnetic simulation software introduced by Ansoft, wherein HFSS provides a simple and intuitive user design interface, a precise and adaptive field solver, and a powerful post-processor with unprecedented electrical performance analysis capability, and can calculate S parameters and full-wave electromagnetic fields of three-dimensional passive structures of arbitrary shapes.

Referring to fig. 1, a flow chart of a method for assembling and using a film bulk acoustic resonator filter according to the present application includes:

step S1, constructing an equivalent circuit model after the filter is assembled according to the chip circuit model of the film bulk acoustic wave resonant filter and the grounding circuit; the filter chip circuit model is formed by a plurality of resonators through different architecture design simulation, the grounding circuit is formed by parasitic capacitance and parasitic inductance of a grounding bonding pad on the surface of a filter chip and parasitic inductance of a grounding bonding wire, the grounding circuit of the resonators bonded and grounded by the grounding bonding wire is the same, and the grounding circuit is formed by connecting the parasitic capacitance and the parasitic inductance of the grounding bonding pad in series and then connecting the parasitic capacitance and the parasitic inductance of the grounding bonding wire in parallel;

step S2, modeling, simulating and calculating the grounding circuit of the filter by using three-dimensional electromagnetic simulation software, and respectively extracting parasitic parameters corresponding to a grounding pad and a grounding bonding wire in the grounding circuit;

step S3, feeding back the parasitic parameters of the grounding circuit to an equivalent circuit model after the filter is assembled, and obtaining S parameters of the filter by using simulation software;

step S4, optimizing S parameter performance of the filter by adjusting parasitic parameters of the grounding circuit, wherein the S parameter performance comprises filter out-of-band rejection and passband bandwidth;

and step S5, obtaining the best assembly mode of the film bulk acoustic wave resonance filter by comparing the performances of the filter under different assembly modes so as to guide the assembly of the filter.

Specifically, the parasitic capacitance and the parasitic inductance of the grounding bonding wire are fixed, the parasitic inductance of the grounding bonding wire can be adjusted by changing the material, the diameter number, the bonding radian and other modes of the grounding bonding wire, the parasitic inductances under different assembly modes are respectively brought into equivalent circuits of the filter, the out-of-band rejection and the passband bandwidth of the filter under different assembly modes can be obtained through simulation, the optimal filter assembly mode is obtained, the debugging time of the film bulk acoustic wave resonant filter is shortened, the assembly of the filter is guided, and the assembly efficiency of the film bulk acoustic wave resonant filter is improved.

Wherein, it needs to be explained that the parasitic capacitance of the grounding pad is calculated by using a plate capacitance formula;

it should be noted that, the resonant frequency of the ground pad is obtained by performing modeling simulation on the ground pad by using simulation software.

Wherein, it is to be noted that the parasitic capacitance of the grounding pad and the resonance frequency obtained by simulation are obtained by calculation, and an LC resonance frequency calculation formula is utilizedWherein f is frequency in hertz (Hz); l is inductance in Henry (H); c is capacitance in farads (F), and the parasitic inductance of the ground pad is determined using this calculation.

Wherein, it is also noted that, a three-dimensional electromagnetic simulation model of the grounding circuit is constructed by using an electromagnetic field simulation software HFSS, and the resonant frequency f of the grounding circuit is obtained by electromagnetic field simulation₀. An equivalent calculation model of a grounding circuit is built in circuit simulation software ADS, a parasitic capacitance value and a parasitic inductance value of the grounding pad are input into the equivalent calculation model, the parasitic inductance value of a grounding bonding wire in the equivalent calculation model is adjusted, so that the resonance frequency f1 obtained by the equivalent calculation model gradually approaches the resonance frequency f0 of the grounding circuit obtained by the three-dimensional electromagnetic simulation model, and when the difference value between f1 and f0 is converged to a preset precision value (for example, the difference value between the two resonance frequencies is less than 1kHz), the corresponding inductance value of the equivalent calculation model is the parasitic inductance of the grounding bonding wire.

In this embodiment, the ground pads and the silicon-based substrate are connected by selecting different numbers of ground bonding wires, for example, by adding one more ground bonding wire in parallel, which is equivalent to increasing the diameter of the ground bonding wire, that is, changing the parasitic inductance of the ground bonding wire, wherein it is further to be noted that, in order to quantify the parasitic inductance value, the material, size, shape, length, bonding radian and diameter of each ground bonding wire are all fixed. By adjusting the parasitic inductance of the grounding bonding wire in the mode, the film bulk acoustic wave resonant filter is improved to achieve the suppression of specified out-of-band frequency or the relative bandwidth of the filter passband, so that the film bulk acoustic wave resonant filter with optimized performance is obtained quickly, and the assembly efficiency and the performance of the film bulk acoustic wave resonant filter are improved.

Here, it should be further noted that, on the basis of the above embodiments, the parasitic inductance of the thin film bulk acoustic wave resonator filter is adjusted by controlling any one or more of the number, length, diameter, bonding radian and material of the ground bonding wires of each FBAR unit.

For example, when the number, length, bonding radian, diameter and other parameters of the grounding bonding wires are not changed, the grounding bonding wires made of different materials are selected as parasitic inductances of the grounding bonding wires for adjusting the FBAR unit; for another example, when the number, length, bonding radian, material and other parameters of the grounding bonding wires are not changed, the grounding bonding wires with different diameters are selected as parasitic inductances of the bonding wires for adjusting the FBAR units; for another example, when the number, diameter, bonding radian, material and other parameters of the grounding bonding wires are not changed, the grounding bonding wires with different lengths are selected as parasitic inductances of the grounding bonding wires for adjusting the FBAR unit; or, the parasitic inductance of the film bulk acoustic wave resonant filter is determined by controlling a plurality of control parameters such as the number and length of the grounding bonding wires, the number and diameter, the number and material, the bonding radian and the number of the bonding wires, the bonding radian and diameter, the length, the number and the diameter of the grounding bonding wires of each FBAR unit, so that the resonant frequency obtained by simulation software gradually approaches to the simulated resonant frequency of the grounding bonding pad with the grounding bonding wires, and when the simulated resonant frequency converges to a preset precision value, the parasitic inductance of the grounding bonding wires is obtained, and the parasitic inductance of the film bulk acoustic wave resonant filter is controlled more accurately.

As shown in fig. 2, a typical FBAR filter based on a ladder topology framework provided by the present application is composed of electrodes, piezoelectric thin-film resonators and a silicon-based substrate, a parallel resonator of the FBAR filter is connected to ground through a ground bonding wire, an equivalent model of a ground pad is a series resistor, a capacitor and an inductor, and an equivalent model of a ground bonding wire is a series resistor and an inductor, which are not described herein again; besides the traditional ladder topology, the FBAR filter may also be in other topologies.

In other embodiments, the thin film bulk acoustic resonator filter includes a signal input terminal rfin (rf input), a signal output terminal rfout (rf output), nodes N1 to Nn +1, and m series FBAR units, N parallel FBAR units interconnected in sequence, where m is a positive integer greater than N; the FBAR unit comprises a supporting layer, a bottom electrode, a piezoelectric layer and a top electrode which are prepared on a substrate and deposited in sequence from bottom to top; the junction between the signal input end RFin and the first series FBAR unit is a junction N1, the junction between the nth series FBAR unit and the signal output end RFout is a junction Nn +1, the junction between the second series FBAR unit and the (N-1) th series FBAR unit is connected with one end of one of the parallel FBAR units respectively, and the other end of each parallel FBAR unit is grounded through a grounding bonding wire.

Wherein the bottom electrode is made of Pt, the piezoelectric layer is AlN, the top electrode is Al, the supporting layer is SiO2, and the supporting layer is Si₃N₄. In an FBAR filter, SiO of the support layer₂Thickness of 300nm, Si of the support layer₃N₄The thickness was 200nm, the thickness of the bottom electrode was 80nm, and the thickness of the piezoelectric layer was 1 μm.

For example, as shown in FIG. 3-a, the number m of series connected FBAR units is 5, and the number n of parallel connected FBAR units is 4; since the parasitic resistance is very small and does not affect the resonant frequency of the FBAR, as shown in fig. 3-b, in this case, the equivalent circuit model of the parasitic parameter consists of C connected in series by ignoring the effect of the resistance_pAnd L_PAnd L in parallel_WAnd (4) forming.

As shown in fig. 4-a, the standard bond wire model in HFSS is used; extracting parasitic parameters, for example, the parasitic capacitance of a ground pad can be calculated by a classical formula and the parasitic capacitance of the ground pad can be calculated by a plate capacitance formula. For example, the parasitic inductance of the ground pad is determined by using an LC resonance frequency calculation formula through a calculated parasitic capacitance of the ground pad and a simulated resonance frequency, the resonance frequency is obtained by performing simulation calculation with HFSS simulation software, for example, the ground bonding wire is trapezoidal after connecting the ground pad and the substrate, the model of the ground bonding wire adopts a 4-point standard model obtained by the HFSS simulation software, and the size of the ground bonding wire is as follows: h 1-0.1 mm, h 2-0.35 mm, D-0.7 mm, Φ -0.025 mm, and the distance between adjacent ground bonding wires is 0.06 mm.

In order to study the influence of parasitic inductance generated when different numbers of bonding wires are grounded on the electrical performance of the FBAR filter, for example, one ground bonding wire, two ground bonding wires and three ground bonding wires are respectively used on the ground pads of different FBAR units. For example, as in fig. 4-b, there is a pattern of one wire bond on each ground pad; 4-c, with a pattern of two bond wires on each ground pad; 4-d, each ground pad has a model of three bonding wires, wherein the pad bonded with only one bonding wire in the model is a radio frequency transmission pad, which does not affect the grounding performance of the FBAR filter; in the above embodiment, the area of the single ground pad is 0.0844mm². Obtaining the parasitic capacitance (C) of the grounding pad through simulation and calculation_P) And parasitic inductance (L)_P)(C_P＝0.0254pF，L_P0.337 nH). In order to extract the ground bonding wire (L)_W) The parasitic inductance of the grounding circuit is simulated in HFSS according to different grounding mode models shown in the figure 4-b and the figure 4-d, and the resonant frequency of the grounding circuit under different grounding assembly modes is obtained. Next, the parasitic parameters (C) obtained by HFSS simulation were simulated using Agilent ADS software to create a parasitic parameter model equivalent to that in FIG. 3-C_PAnd L_P) Introducing a parasitic parametric model by modifying the ground bond line (L)_W) Such that the resonant frequency obtained in ADS gradually approaches the simulated resonant frequency obtained in HFSS. Finally, when the difference between the two resonant frequencies converges to a predetermined precision value (e.g., the difference between the two resonant frequencies is less than 1kHz),determining respective parasitic parameters L of grounding bonding wires under different grounding assembly modes_W。

Table 1 is the result of parasitic inductance extracted from the ground bond wires with different ground assembly styles, where parasitic inductance decreases as the number of ground bond wires per pad increases.

TABLE 1

Number of bonding wires	Resonance frequency (GHz)	Parasitic inductance Lw(nH)
			1	36.69	0.401
2	41.85	0.232
			3	44.25	0.172

As shown in fig. 5, a simulation result diagram of grounding bonding wires with different configurations is provided for the present application, and the resonator is directly grounded through the grounding bonding wires. For a filter with bond wire ground, the first transmission zero frequency (i.e., the transmission zero closest to the center frequency of the filter's lower band) is 3.6GHz, and the second transmission zero frequency is 3.52 GHz. For the filters shown in fig. 4-b, fig. 4-c, and fig. 4-d, the first transmission zero frequencies are 3.595GHz, 3.59GHz, and 3.58GHz, respectively, and the second transmission zero frequencies are 3.508GHz, 3.505GHz, and 3.48GHz, respectively. As can be seen from the above, as the number of bonding wires increases (i.e., parasitic inductance Lw decreases), the transmission zero at the low frequency edge shifts to a higher frequency.

As shown in fig. 6, a graph of simulation results of ground bond wires of different configurations is provided for the present application, wherein two samples of the assembled FBAR filter have one ground bond wire and two ground bond wires bonded to each ground pad. A pair of GSG probes is used to measure the S-parameters of the filters on the circuit board. The measurements include test data on the filter chip wafer, as shown in fig. 6, and measurements from the curves show that the transmission zero of the filter at the low frequency edge shifts to higher frequencies as the number of bonds increases. The increase in the number of ground bonding wires is consistent with the simulation result in fig. 5, and the transmission zero frequency in the low frequency band is 3.514GHz in the wafer test.

Simulation modeling and analysis of FBAR filters considering different configurations of ground bond wires. In some practical applications, it is found that the electrical performance of the filter is affected by the design of the filter ground, and in order to optimize the performance of the filter, a filter model is established that takes into account parasitic inductance and capacitance. In the modeling process, the resonant frequencies of the ground pad and the ground bonding wire are simulated to extract parasitic parameters. Then, filters with different configurations of ground bondwires were simulated. From the simulation results, it is shown that as the number of ground bondwires increases, the transmission zero at the low frequency edge shifts to higher frequencies. To verify validity, two filter samples were assembled and measured, e.g., filter one with one ground bond wire bonded to each ground pad and filter two with two ground bond wires bonded to each ground pad. The measurement data shows that the low-frequency transmission zero distribution of the filter is related to the configuration of the grounding wire and is consistent with the simulation result; also, the effect of the different configurations of the ground bond wires on the electrical performance of the FBAR filter contributes to the improvement of the filter performance through the assembly design of the FBAR filter.

In other embodiments, the ratio of the areas of the series FBARs and the parallel FBARs of the film bulk acoustic resonator filter is changed, the area of the series FBARs is used as an optimization variable, the specified waveform parameter is used as an optimization target, and a gradient optimization algorithm is used for optimization.

Specifically, the area of the serially connected FBARs is w₁*w₁～w₅*w₅The area ratio of the parallel FBARs to the series FBARs is a₁～a₄Setting w₁*w₁～w₅*w₅、a₁～a₄For optimizing variables, the optimization objectives are set as follows: the transmission coefficient S in the filter S parameters is generally set as more stringent as possible to optimize the target, so as to increase the robustness of the design. For example, a₁～a₄Is 1-8, the loss of the transmission coefficient S in the S parameter is set to reach a preset range in a preset frequency band, and a variable (w) is optimized₁,w₂,w₃,w₄,w₅) And (a)₁,a₂,a₃,a₄)，w₁～w₅Has a unit of μm²And the FBAR filter with better performance can be obtained by using a gradient optimization method for simulation.

By way of the examples described above, the present application also provides an electronic apparatus (e.g., an electronic device) comprising: the film bulk acoustic wave resonant filter obtained by the using method is assembled by using the film bulk acoustic wave resonant filter.

In summary, the present application establishes an equivalent model of a film bulk acoustic resonator filter with respect to parasitic inductance and parasitic capacitance by simulating filters with differently configured ground bonding wires; the parasitic inductance of the grounding bonding wire is adjusted to enable the film bulk acoustic wave resonant filter to achieve specified out-of-band rejection or pass band bandwidth optimization, so that the film bulk acoustic wave resonant filter with a specified waveform is obtained quickly, and the assembly efficiency and the performance of the film bulk acoustic wave resonant filter are improved; meanwhile, aiming at the performance simulation and emulation work of the FBAR, an important theoretical basis is provided for realizing the assembly of the device. Therefore, the application effectively overcomes various defects in the prior art and has high industrial utilization value.

The above embodiments are merely illustrative of the principles and utilities of the present application and are not intended to limit the application. Any person skilled in the art can modify or change the above-described embodiments without departing from the spirit and scope of the present application. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical concepts disclosed in the present application shall be covered by the claims of the present application.