阅读说明：本技术 磁存储装置 (Magnetic memory device ) 是由 岩崎刚之 村山昭之 甲斐正 大坊忠臣 远藤将起 大岭俊平 五十岚太一 伊藤顺一 于 2019-03-08 设计创作，主要内容包括：一实施方式的磁存储装置具备磁阻效应元件,所述磁阻效应元件包含非磁性体、及所述非磁性体上的积层体。所述积层体包含所述非磁性体上的第1铁磁体、与所述第1铁磁体交换耦合的反铁磁体、及所述第1铁磁体与所述反铁磁体之间的第2铁磁体,且构成为根据在积层方向内在第1方向上流动的第1电流成为第1电阻,根据在与所述第1方向相反的第2方向上流动的第2电流成为与所述第1电阻不同的第2电阻。(A magnetic memory device according to one embodiment includes a magnetoresistive element including a nonmagnetic material and a laminate on the nonmagnetic material. The multilayer body includes a1 st ferromagnetic body on the nonmagnetic body, an antiferromagnet that is exchange-coupled to the 1 st ferromagnetic body, and a2 nd ferromagnetic body between the 1 st ferromagnetic body and the antiferromagnet, and is configured to have a1 st resistance in accordance with a1 st current flowing in a1 st direction in a lamination direction, and to have a2 nd resistance different from the 1 st resistance in accordance with a2 nd current flowing in a2 nd direction opposite to the 1 st direction.)

1. A magnetic memory device comprises a magnetoresistive element including a nonmagnetic material and a laminate on the nonmagnetic material

The laminate body includes:

a1 st ferromagnetic body provided on the non-magnetic body and maintaining different resistances according to an applied current;

an antiferromagnet exchange coupled with the 1 st ferromagnet; and

a2 nd ferromagnet between the 1 st ferromagnet and the antiferromagnet.

2. The magnetic storage device of claim 1, wherein

The 2 nd ferromagnetic member has a film thickness of 0.1 nm to 0.3 nm.

3. The magnetic storage device of claim 1, wherein

The 2 nd ferromagnetic body has an amorphous structure.

4. The magnetic storage device of claim 3, wherein

The 2 nd ferromagnetic body has soft magnetism.

5. The magnetic storage device of claim 1, wherein

The 2 nd ferromagnetic body has the same crystal structure as the 1 st ferromagnetic body.

6. The magnetic storage device of claim 5, wherein

The 2 nd ferromagnet has a hard magnetic property.

7. The magnetic storage device of claim 1, wherein

The 2 nd ferromagnetic material contains at least one element selected from cobalt (Co), iron (Fe), nickel (Ni), and manganese (Mn).

8. The magnetic storage device of claim 7, wherein

The 2 nd ferromagnetic material further contains at least one element selected from niobium (Nb), zirconium (Zr), tantalum (Ta), titanium (Ti), hafnium (Hf), silicon (Si), and gadolinium (Gd).

9. The magnetic storage device of claim 8, wherein

The 2 nd ferromagnetic body contains at least one alloy selected from cobalt titanium (CoTi), cobalt hafnium (CoHf), cobalt zirconium (CoZr), nickel niobium (NiNb), nickel zirconium (NiZr), nickel tantalum (NiTa), nickel titanium (NiTi), nickel hafnium (niff), manganese silicon (MnSi), and manganese gadolinium (MnGd).

10. The magnetic storage device of claim 7, wherein

The 2 nd ferromagnet further contains boron (B).

11. The magnetic storage device of claim 1, wherein

The antiferromagnet contains nickel manganese (NiMn) or palladium manganese (PdMn).

12. The magnetic storage device of claim 1, wherein

The antiferromagnet has a different crystal structure than the 1 st ferromagnet.

13. The magnetic storage device of claim 12, wherein

The 1 st ferromagnetic body has the same crystal structure as the nonmagnetic body.

14. The magnetic storage device of claim 1, wherein

The magnetoresistance effect element further includes a 3 rd ferromagnetic body on the non-magnetic body on the opposite side of the 1 st ferromagnetic body, and

the 1 st ferromagnetic body, the nonmagnetic body, and the 3 rd ferromagnetic body constitute a magnetic tunnel junction.

15. The magnetic memory device of claim 14 wherein

The magnetization of the 3 rd ferromagnetic body is larger than the magnetization of the laminated body.

16. The magnetic storage device according to claim 1, comprising a storage unit including the magnetoresistance effect element, and a selector connected to the magnetoresistance effect element.

Technical Field

Background

Magnetic Memory devices (MRAM) using a magnetoresistive effect element as a Memory element are known.

Disclosure of Invention

Drawings

Fig. 1 is a block diagram illustrating a configuration of a magnetic storage device according to embodiment 1.

Fig. 2 is a circuit diagram for explaining the configuration of the memory cell array of the magnetic memory device according to embodiment 1.

Fig. 3 is a cross-sectional view for explaining the structure of the memory cell array of the magnetic memory device according to embodiment 1.

Fig. 4 is a cross-sectional view for explaining the configuration of the magnetoresistive element of the magnetic memory device according to embodiment 1.

Fig. 5 is a diagram for explaining the magnetic characteristics of the memory layer in the magnetoresistive element of the magnetic memory device according to embodiment 1.

Fig. 6 is a schematic diagram for explaining a method of manufacturing a magnetoresistive element of the magnetic memory device according to embodiment 1.

Fig. 7 is a schematic diagram for explaining a method of manufacturing a magnetoresistive element of the magnetic memory device according to embodiment 1.

Fig. 8 is a schematic diagram for explaining a method of manufacturing a magnetoresistive element of the magnetic memory device according to embodiment 1.

Fig. 9 is a schematic diagram for explaining a method of manufacturing a magnetoresistive element of the magnetic memory device according to embodiment 1.

Fig. 10 is a cross-sectional view for explaining the configuration of the magnetoresistive element of the magnetic memory device according to embodiment 2.

Fig. 11 is a schematic diagram for explaining a method of manufacturing a magnetoresistive element of the magnetic memory device according to embodiment 2.

Fig. 12 is a schematic diagram for explaining a method of manufacturing a magnetoresistive effect element of the magnetic memory device according to embodiment 2.

Fig. 13 is a cross-sectional view for explaining the configuration of the magnetoresistive element in the magnetic memory device according to variation 1.

Fig. 14 is a circuit diagram for explaining the configuration of the memory cell array of the magnetic memory device according to variation 2.

Fig. 15 is a sectional view for explaining the structure of a memory cell of the magnetic memory device according to variation 2.

Embodiments relate generally to a magnetic storage device.