Fault diagnosis device
阅读说明:本技术 故障诊断装置 (Fault diagnosis device ) 是由 今中佑树 于 2018-06-18 设计创作,主要内容包括:抑制放电能力的降低,并且诊断放电电阻的故障。一种使蓄电元件(31)放电的放电电路(60)的故障诊断装置,所述放电电路(60)包括由并联连接的多个电阻块(B)构成的电阻电路(61),所述电阻块(B)由串联连接的多个放电电阻(Ra、Rb)构成,所述故障诊断装置在所述蓄电元件(31)的放电过程中,基于所述放电电阻(Ra、Rb)的连接点(P)的电压或电流,诊断所述电阻电路(61)的故障。(The reduction of the discharge capability is suppressed, and the failure of the discharge resistance is diagnosed. A failure diagnosis device for a discharge circuit (60) that discharges an electrical storage element (31), wherein the discharge circuit (60) includes a resistance circuit (61) that is configured from a plurality of resistance blocks (B) connected in parallel, the resistance blocks (B) being configured from a plurality of discharge resistances (Ra, Rb) connected in series, and wherein the failure diagnosis device diagnoses a failure of the resistance circuit (61) based on a voltage or a current at a connection point (P) of the discharge resistances (Ra, Rb) during discharge of the electrical storage element (31).)
1. A failure diagnosis device for a discharge circuit that discharges a power storage element,
the discharge circuit includes a resistance circuit composed of a plurality of resistance blocks connected in parallel,
the resistance block is composed of a plurality of discharge resistances connected in series,
the failure diagnosis device diagnoses a failure of the resistance circuit based on a voltage current at a connection point of the discharge resistor during a discharge process of the power storage element.
2. The failure diagnosis device according to claim 1, comprising:
the detection element detects the voltage difference between the resistor blocks of the connection point of the discharge resistor and outputs a detection signal; and
and a determination unit that determines whether or not the resistance circuit has a failure based on the detection signal output from the detection element.
3. The failure diagnostic device according to claim 2,
a plurality of the detection elements are provided corresponding to the plurality of the resistive patches,
the plurality of detection elements are commonly connected to the determination unit.
4. The fault diagnosis device according to claim 2 or claim 3,
the detection element is an optical insulating element that transmits the detection signal to the determination unit while being insulated from the resistance circuit.
5. The failure diagnostic device according to claim 4,
the electric storage element is used for a 48V-series battery.
6. The fault diagnosis device according to any one of claim 2 to claim 5,
the discharge circuit includes a series switch connected in series with the resistive circuit,
the determination unit determines whether or not the series switch has failed, based on a voltage at a connection point of the discharge resistor.
7. The fault diagnosis device according to any one of claim 1 to claim 6,
the electric storage elements are provided in plurality in series,
the discharge circuit is provided corresponding to each of the plurality of power storage elements, and is a balancer circuit that equalizes voltages of the plurality of power storage elements.
Technical Field
The present invention relates to a technique for detecting a failure of a discharge resistor.
Background
A battery formed by connecting secondary batteries in series has a balancer (balancer) function to equalize the remaining capacity between the secondary batteries. In general, the resistance of the balancer circuit is formed in a structure in which a plurality of discharge resistors are connected in series and parallel for the reason of heat dissipation and rated power. In the balancer circuit, when the discharge resistor fails in the short-circuit mode, power loss in the resistor connected in series with the short-circuited resistor becomes large. Therefore, when the balancer circuit is operated in a short-circuited state, a failure may occur due to heat generation. Further, when the discharge resistor fails in the open mode, the discharge capacity of the balancer circuit is reduced, and therefore, the voltages of the secondary batteries cannot be balanced.
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Disclosure of Invention
Problems to be solved by the invention
In the method of
The present invention has been made in view of the above circumstances, and an object thereof is to suppress a decrease in discharge capacity and diagnose a failure of a discharge resistor.
Means for solving the problems
A failure diagnosis device for a discharge circuit that discharges an electric storage element, the discharge circuit including a resistance circuit composed of a plurality of resistance blocks connected in parallel, the resistance blocks being composed of a plurality of discharge resistances connected in series, the failure diagnosis device diagnosing a failure of the resistance circuit based on a voltage or a current at a connection point of the discharge resistances during discharge of the electric storage element.
Effects of the invention
In this configuration, a failure of the resistance circuit can be detected during the operation of the discharge circuit. Therefore, it is not necessary to stop the discharge circuit during the failure detection, and therefore, the reduction of the discharge capability of the discharge circuit can be suppressed.
Drawings
Fig. 1 is a side view of an automobile according to
Fig. 2 is a perspective view of the battery.
Fig. 3 is an exploded perspective view of the battery.
Fig. 4 is a block diagram showing an electrical structure of the battery.
Fig. 5 is a circuit diagram of a discharge circuit.
Fig. 6 is a graph obtained by summing the input voltages to the BM in the state of the discharge resistor.
Fig. 7 is a circuit diagram of a discharge circuit of
Fig. 8 is a graph in which the input voltage Vin to the BM is summed up for each state of the transistor Q4.
Fig. 9 is a circuit diagram of a discharge circuit of
Fig. 10 is a circuit diagram of a discharge circuit according to another embodiment.
Detailed Description
A failure diagnosis device for a discharge circuit that discharges an electric storage element, wherein the discharge circuit includes a resistance circuit composed of a plurality of resistance blocks connected in parallel, the resistance blocks being composed of a plurality of discharge resistances connected in series, and the failure diagnosis device diagnoses a failure of the resistance circuit based on a voltage or a current at a connection point of the discharge resistances during discharge of the electric storage element. In this configuration, a failure of the resistance circuit can be diagnosed during the operation of the discharge circuit. Therefore, it is not necessary to stop the discharge circuit for failure diagnosis, and therefore, a decrease in the discharge capability of the discharge circuit can be suppressed.
The failure diagnosis device may include: the detection element detects the voltage difference between the resistor blocks of the connection point of the discharge resistor and outputs a detection signal; and a determination unit that determines whether or not the resistance circuit has a failure based on a detection signal output from the detection element. In this configuration, the determination unit can diagnose a failure of the resistance circuit by monitoring only the presence or absence of the detection signal output from the detection element. Therefore, it is not necessary for the determination unit to have a high arithmetic function, and the failure diagnosis of the resistance circuit can be performed with a low-cost configuration
The plurality of detection elements may be provided corresponding to the plurality of resistance blocks, and the plurality of detection elements may be connected to the determination unit in common. In this configuration, only one detection line connecting the judgment section and each detection element is sufficient, and the circuit configuration is simple. In addition, the determination unit may monitor only one input when determining whether or not the resistance circuit has a failure, and thus the monitoring load is small.
The detection element is an optical insulating element that transmits the detection signal to the determination unit while being insulated from the resistance circuit. In this configuration, the determination unit can be protected from overvoltage. Further, since the determination unit is less likely to fail, the reliability of failure diagnosis of the resistance circuit is high.
The electricity storage element is for a 48V-series battery. The voltage of the 48V-series battery is 4 times that of the 12V-series battery, and the determination unit is likely to malfunction. By applying this technique, the determination unit can be effectively protected from overvoltage, and since a failure is less likely to occur in the determination unit, the reliability of failure diagnosis of the resistance circuit is high.
The discharge circuit may include a series switch connected in series with the resistor circuit, and the determination unit may determine whether or not the series switch has a failure based on a voltage value at a connection point of the discharge resistor. In this configuration, it is possible to detect not only a failure of the resistance circuit but also a failure of the series switch.
Preferably, the plurality of power storage elements are provided in series, and the discharge circuit is a balancer circuit provided corresponding to each of the plurality of power storage elements and configured to equalize voltages of the plurality of power storage elements. In this configuration, since it is not necessary to stop the discharge circuit for failure diagnosis, the balance capability of the balancer circuit (discharge circuit) becomes high.
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1. Description of the storage batteries
Fig. 1 is a side view of an automobile, fig. 2 is a perspective view of a battery, fig. 3 is an exploded perspective view of the battery, and fig. 4 is a block diagram showing an electrical structure of the battery.
As shown in fig. 1, the
As shown in fig. 3,
As shown in fig. 3, a plurality of
As shown in fig. 2, the
As shown in fig. 3, the
Referring to fig. 4, an electrical structure of
Referring to fig. 4, an electrical structure of
The assembled
The cell voltage E of the
The current sensor 41 is provided inside the
The voltage detector 45 is provided inside the
The temperature sensor 47 is provided inside the
The current interrupting device 37 may be a contact switch (mechanical type) such as a relay, an FET (field effect transistor), or a semiconductor switch such as a transistor. The current interrupting device 37 is disposed in the current carrying path 35 of the assembled
The BM50 includes a CPU51 having an arithmetic function, a memory 53 storing various information, a communication unit 55, and the like, and the BM50 is provided on the
The BM50 monitors the current of the
When the voltage, current, or temperature of the
As shown in the following equation (2), BM50 estimates the SOC (state of charge) of
(1) The formula represents the definition of SOC.
SOC=Cr/Co×100……(1)
Co is the full charge capacity of the secondary battery, and Cr is the residual capacity of the secondary battery.
SOC=SOCo+100×∫Idt/Co……(2)
SOCo is the initial value of SOC, and I is the current.
2. Discharging
The
The
The reason why the
The 4 th transistor Q4 is an NPN transistor. The collector of the 4 th transistor Q4 is connected to the
When an operation signal is applied to the base of the 4 th transistor Q4 to turn on the 4 th transistor Q4, a current can flow through the
The BM50 monitors the voltage of each
As shown in fig. 5, the
The 2 nd transistor Q2 is a PNP transistor, and the emitter of the 2 nd transistor Q2 is connected to the connection point P2 of the two discharge resistors Ra and Rb of the resistor block B2, and the base is connected to the connection point P3 of the two discharge resistors Ra and Rb of the resistor block B3. The 3 rd transistor Q3 is a PNP transistor, and the emitter of the 3 rd transistor Q3 is connected to the connection point P3 between the two discharge resistors Ra and Rb of the resistor block B3, and the base is connected to the connection point P1 between the two discharge resistors Ra and Rb of the resistor block B1.
The collector of the 1 st transistor Q1, the collector of the 2 nd transistor Q2, and the collector of the 3 rd transistor Q3 are commonly connected to a detection line Lo.
When the voltage differences between the emitter and the base of the 1 st to 3 rd transistors Q1 to Q3 are higher than the operating voltage (for example, 0.6V), the 1 st to 3 rd transistors Q1 to Q3 are turned on. The 1 st to 3 rd transistors Q1 to Q3 are examples of the "detection element" of the present invention.
While the
Next, a method of diagnosing a failure of the
When the 4 th transistor Q4 is turned on, a discharge current flows from the
Therefore, as shown in fig. 6, all of the transistors Q1 to Q3 are turned off, and the input voltage Vin to the input BM50 becomes zero [ V ].
Next, when the discharge resistance Ra of the resistance block B1 is open-circuited due to disconnection or the like, the voltage at the connection point P1 of the resistance block B1 becomes 0[ V ], and the voltages at the connection points P2 and P3 of the resistance blocks B2 and B3 become E/2[ V ]. This generates a positive voltage difference between the emitter and the base of the 3 rd transistor Q3, which is higher than the operating voltage of the transistor Q. Accordingly, the 3 rd transistor Q3 among the transistors Q1 to Q3 is turned on, and the input voltage Vin of the input BM50 becomes E/2[ V ]. That is, the detection signal of E/2[ V ] is input from the 3 rd transistor Q3 to the
When the discharge resistor Ra of the resistance block B1 has a short-circuit fault, the voltage at the connection point P1 of the resistance block B1 becomes E [ V ], and the voltages at the connection points P2 and P3 of the resistance blocks B2 and B3 become E/2[ V ]. This generates a positive voltage difference between the emitter and the base of the 1 st transistor Q1, which is higher than the operating voltage of the transistor Q. Accordingly, the 1 st transistor Q1 among the transistors Q1 to Q3 is turned on, and the input voltage Vin of the input BM50 becomes E [ V ]. That is, the 1 st transistor Q1 inputs the detection signal of E [ V ] to the
Next, when the discharge resistor Rb of the resistance block B1 is open-circuited due to disconnection or the like, the voltage at the connection point P1 of the resistance block B1 becomes E [ V ], and the voltages at the connection points P2 and P3 of the resistance blocks B2 and B3 become E/2[ V ]. This generates a positive voltage difference between the emitter and the base of the 1 st transistor Q1, which is higher than the operating voltage of the transistor Q. Accordingly, the 1 st transistor Q1 among the transistors Q1 to Q3 is turned on, and the input voltage Vin of the input BM50 becomes E [ V ]. That is, the 1 st transistor Q1 inputs the detection signal of E [ V ] to the
When the discharge resistor Rb of the resistance block B1 is short-circuited, the voltage at the connection point P1 of the resistance block B1 becomes 0[ V ], and the voltages at the connection points P2 and P3 of the resistance blocks B2 and B3 become E/2[ V ]. This generates a positive voltage difference between the emitter and the base of the 3 rd transistor Q3, which is higher than the operating voltage of the transistor Q. Accordingly, the 3 rd transistor Q3 among the transistors Q1 to Q3 is turned on, and the input voltage Vin of the input BM50 becomes E/2[ V ]. That is, the detection signal of E/2[ V ] is input from the 3 rd transistor Q3 to the
When one of the discharge resistors Ra and Rb of the resistor block B2 fails, one of the 1 st transistor Q1 and the 2 nd transistor Q2 is turned on, and the input voltage Vin of the input BM50 becomes E [ V ] or E/2[ V ]. That is, the detection signal of E [ V ] or E/2[ V ] is input to the BM50 from one of the 1 st transistor Q1 and the 2 nd transistor Q2.
When any one of the discharge resistors Ra and Rb of the resistor block B3 fails, one of the 2 nd transistor Q2 and the 3 rd transistor Q3 is turned on, and the input voltage Vin to the input BM50 becomes E [ V ] or E/2[ V ]. That is, the detection signal of E [ V ] or E/2[ V ] is input to the BM50 from one of the 2 nd transistor Q2 and the 3 rd transistor Q3.
As described above, the BM50 monitors the input voltage Vin while the
Specifically, when the input voltage Vin is zero [ V ], the
In this configuration, the BM50 diagnoses a failure of the
3. Description of the effects
In this configuration, a failure of the
In the present configuration, the BM50 monitors only the input voltage Vin, thereby being able to diagnose a failure of the
In this configuration, the circuit configuration is simple because only one detection line Lo connecting the BM50 and the transistors Q1 to Q3 is required. When determining whether or not the
In the present configuration, since the
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As shown in fig. 7,
When an operation signal is input from the BM50 to the base of the 5 th transistor Q5, the 5 th transistor Q5 is turned on, and the base voltage of the 3 rd transistor Q3 drops. Thereby, the 3 rd transistor Q3 is switched from off to on, and therefore, the voltage at the connection point P3 of the resistor block B3 is input to the BM50 via the 3 rd transistor Q3.
The BM50 determines whether or not the 4 th transistor Q4 has failed, based on the voltage at the connection point P3 when the 4 th transistor Q4 is turned on and turned off. Specifically, when the operation signal of off is applied from the BM50 to the 4 th transistor Q4 and the operation signal of on is applied to the 5 th transistor Q5, as shown in fig. 8, when the 4 th transistor Q4 operates normally (when it is off), the input voltage Vin input to the BM50 becomes E [ V ]. On the other hand, in the case where the 4 th transistor Q4 has a short-circuit failure, the input voltage Vin input to the BM50 becomes E/2[ V ]. Therefore, the BM50 can determine the short circuit failure of the 4 th transistor Q4 according to the value of the input voltage Vin.
When the BM50 applies the on operation signal to the 4 th transistor Q4 and the on operation signal to the 5 th transistor Q5, as shown in fig. 8, the input voltage Vin to the BM50 becomes E/2[ V ] when the 4 th transistor Q4 normally operates (turns on). On the other hand, in the case where the 4 th transistor Q4 has an open failure, the input voltage Vin input to the BM50 becomes E [ V ]. Therefore, the BM50 can determine the open failure of the 4 th transistor Q4 according to the value of the input voltage Vin.
In
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