阅读说明：本技术 包括有机光电二极管的辐射检测装置 (Radiation detection device comprising an organic photodiode ) 是由 阿德里安·巴伊 艾米琳·莎偌可 本杰明·布蒂农 弗兰克·辛甘特 于 2018-04-19 设计创作，主要内容包括：本发明涉及一种用于检测电磁辐射(49)的装置,所述装置包括至少一个光电检测器,所述光电检测器包括在半导体层(32、34、36)的同一堆叠(30)中形成的有机二极管(D)以及有机光电二极管(PH),所述有机光电二极管接收所述辐射,所述光电检测器还包括至少一个遮蔽层(44),所述至少一个遮蔽层对于所述辐射不透明并遮蔽堆叠中与二极管相对应的部分。(The invention relates to a device for detecting electromagnetic radiation (49), comprising at least one photodetector comprising an organic diode (D) and an organic Photodiode (PH) formed in the same stack (30) of semiconductor layers (32, 34, 36), said organic photodiode receiving said radiation, said photodetector further comprising at least one shielding layer (44) opaque to said radiation and shielding the portion of the stack corresponding to the diode.)

1. A detection device (10) for detecting electromagnetic radiation (49; 56), comprising at least one photodetector (Pix; Pix1) comprising an organic Photodiode (PH) and an organic diode (D) different from a light-emitting diode, formed in a same stack (30) of semiconductor layers (32, 34, 36), said organic photodiode receiving said radiation, said photodetector further comprising at least one shielding layer (44) opaque to said radiation and shielding a portion of said stack corresponding to said diode.

2. The detection device according to claim 1, wherein the anode of the diode (D) is connected to the anode of the Photodiode (PH) or the cathode of the diode is connected to the cathode of the photodiode.

3. The detection apparatus according to claim 1 or 2, comprising: a support (20), a first conductive portion (26) extending over the support, and a second conductive portion (28) extending over the support, the stack (30) at least partially covering the first conductive portion and at least partially covering the second conductive portion, a minimum distance between the first conductive portion and the second conductive portion being greater than 10 nm.

4. The detection apparatus as defined in claim 3, wherein the opaque masking layer (44) is located on a side of the support (20) opposite the first and second conductive portions (26, 28).

5. A detection device according to claim 3, wherein the first conductive part (26) is at least partially transparent to the radiation and the second conductive part (28) is opaque to the radiation.

6. The detection apparatus as defined in claim 3, further comprising an insulating layer (38) covering the stack (30), the opaque masking layer (44) being located on the insulating layer on a side of the insulating layer opposite the stack.

7. The detection apparatus of claim 6, further comprising: a conductive element (40) extending over and through the insulating layer (38), the conductive element (40) being in contact with the first conductive portion (26) or with the second conductive portion (28), the conductive element (40) also forming the opaque masking layer.

8. The detection apparatus according to any one of claims 1 to 7, comprising an array of photodetectors (Pix) distributed in rows and columns.

9. The detection device according to any one of claims 1 to 8, wherein the stack (30) comprises at least a first semiconductor layer, a second semiconductor layer and a third semiconductor layer, the second semiconductor layer (34) being interposed between and in contact with the first semiconductor layer (32) and the third semiconductor layer (36), the second semiconductor layer being the layer in which the majority of the radiation received by the Photodiode (PH) is captured.

10. The detection device according to claim 9 in association with claim 3, wherein the first semiconductor layer (32) is in contact with the first conductive portion (26) and the second conductive portion (28).

11. The detection device according to claim 9 or 10, wherein the first semiconductor layer (32) and/or the third semiconductor layer (36) are made of a material selected from the group comprising:

metal oxides, in particular titanium oxide or zinc oxide;

molecular host/dopant systems, in particular those commercialized by Novaled under the trade names NET-5/NDN-1 or NET-8/MDN-26;

conducting polymers or doped semiconducting polymers, such as PEDOT polymers tosylate, which is a mixture of poly (3,4) -ethylenedioxythiophene and tosylate;

carbonates, such as CsCO 3;

polyelectrolytes, for example poly [9, 9-bis (3' - (N, N-dimethylamino) propyl) -2, 7-fluorene-alt-2, 7- (9, 9-dioctylfluorene) ] (PFN), poly [3- (6-trimethylhexylammonium ] thiophene (P3 TMAH), or poly [9, 9-bis (2-ethylhexyl) fluorene ] -b-poly [3- (6-trimethylhexylammonium ] thiophene (PF2/6-b-P3 TMAH);

a Polyethyleneimine (PEI) polymer or ethoxylated (PEIE), propoxylated and/or butoxylated polyethyleneimine polymer; and

mixtures of two or more of these materials.

Technical Field

The invention relates to a device for detecting electromagnetic radiation, in particular light, comprising an array of organic photodiodes.

Background

There has been provided a method for forming a device for detecting electromagnetic radiation comprising a transistor and a photodiode based on organic conductor and semiconductor materials. Such materials have the advantage of being easier to deposit and more corrosion resistant than inorganic conductor and semiconductor materials, such as silicon.

The use of organic materials further advantageously enables the formation of detection devices on any type of support, in particular on flexible supports such as plastic, paper, cardboard or fabric, on large-size supports such as signboards or on disposable supports such as packages of convenience goods.

The detection means may comprise an array of photodetectors arranged in rows and columns. Each photodetector may comprise an organic photodiode assembled in series with an electronic component enabling selection of the associated photodiode under the control of the selection means. The selection element may be an Organic Thin Film Transistor (OTFT).

A disadvantage is that the method of manufacturing the detection device may then comprise a large number of steps, in particular organic photodiode manufacturing steps and organic transistor manufacturing steps.

Disclosure of Invention

Drawings

The foregoing and other features and advantages will be discussed in detail in the following non-limiting description of specific embodiments, which is to be read in connection with the accompanying drawings, wherein:

FIG. 1 is an electrical diagram of an electromagnetic radiation detection apparatus including an array of organic photodetectors;

FIGS. 2 and 3 are partial and simplified top and cross-sectional views, respectively, of an embodiment of a photodetector of the detection apparatus of FIG. 1;

FIGS. 4,5 and 6 are a partial and simplified top view and two cross-sectional views, respectively, of another embodiment of a photodetector of the detection apparatus of FIG. 1;

fig. 7A to 7E are partially simplified cross-sectional views of structures obtained in successive steps of another embodiment of the method of manufacturing a photodetector illustrated in fig. 2 and 3; and is

Fig. 8-13 are views of fig. 3 of other embodiments of photodetectors similar to the detection device of fig. 1.

It is an object of an embodiment to overcome all or part of the disadvantages of the previously described electromagnetic radiation detection apparatus comprising an organic photodiode.