阅读说明：本技术 超导装置中的磁通量控制 (Magnetic flux control in superconducting devices ) 是由 J·马蒂尼 于 2018-06-04 设计创作，主要内容包括：本发明提供一种方法,其包含从第一装置生成偏压信号；及将所述偏压信号施加到第二装置,所述第一装置具有(a)超导迹线及(b)超导量子干涉装置SQUID,其中所述SQUID的第一端子电耦合到所述超导迹线的第一端,且所述SQUID的第二端子电耦合到所述超导迹线的第二端,其中从所述第一装置生成所述偏压信号包含：将第一信号Φ<Sub>1</Sub>施加到所述SQUID的第一子环路；及将第二信号Φ<Sub>2</Sub>施加到所述SQUID的第二子环路,其中施加所述第一信号Φ<Sub>1</Sub>及所述第二信号Φ<Sub>2</Sub>使得所述第一装置的超导相的值递增或递减达2π的非零整数倍n。(A method includes generating a bias signal from a first device; and applying the bias signal to a second device, the first device having (a) a superconducting trace and (b) a superconducting quantum interference device (SQUID), wherein a first terminal of the SQUID is electrically coupled to a first end of the superconducting trace and a second terminal of the SQUID is electrically coupled to a second end of the superconducting trace, wherein generating the bias signal from the first device comprises: the first signal phi 1 A first sub-loop applied to the SQUID; and applying the second signal phi 2 A second sub-loop applied to the SQUID, wherein the first signal Φ is applied 1 And the second signal phi 2 So that the firstThe value of the superconducting phase of a device is incremented or decremented by a non-zero integer multiple n of 2 pi.)

1. A method comprising

Generating a bias signal from a first device, an

Applying the bias signal to a second device, the first device comprising (a) a superconducting trace and (b) a superconducting quantum interference device (SQUID) having at least three parallel-coupled nonlinear inductor junctions, wherein a first terminal of the SQUID is electrically coupled to a first end of the superconducting trace and a second terminal of the SQUID is electrically coupled to a second end of the superconducting trace to form a loop, wherein generating the bias signal from the first device comprises:

the first time-varying magnetic flux phi₁A first sub-loop applied to the SQUID; and

second time-varying magnetic flux phi₂A second sub-loop applied to the SQUID,

wherein the first time-varying magnetic flux Φ is applied₁And the second time-varying magnetic flux phi₂Such that the value of the superconducting phase of the first device is incremented or decremented by a non-zero integer multiple n of 2 pi.

2. The method of claim 1, wherein the output state comprises an effective phase shift of a current through the first device.

3. The method of claim 1, wherein the output state comprises an effective flux through the first device.

4. The method of claim 1, wherein the first time-varying magnetic flux Φ₁And said second time-varying magnetic flux phi₂Are each less than the flux quantum phi₀。

5. The method of claim 1, wherein the first time-varying magnetic flux Φ₁With said flux quantum phi₀Ratio phi of₁/Φ₀And the second time-varying magnetic flux phi₂With said flux quantum phi₀Ratio phi of₂/Φ₀A path is traced around a point at which a value of current through the first device is 0.

6. The method of claim 5, wherein the ratio Φ at the point at which the current through the first device is 0₁/Φ₀And the ratio phi₂/Φ₀Approximately equal to 1/3.

7. The method of claim 5, wherein when the ratio Φ is₁/Φ₀And saidRatio phi₂/Φ₀The integer multiple n is incremented when tracing the path in a first direction around the point at which the current through the first device is 0, or

Wherein when the ratio phi₁/Φ₀And the ratio phi₂/Φ₀The integer multiple n is decremented as the path is traced along a second direction opposite the first direction.

8. The method of claim 5, wherein the path is a closed loop path.

9. The method of claim 1, wherein the first time-varying magnetic flux Φ₁With said flux quantum phi₀Ratio phi of₁/Φ₀And the second time-varying magnetic flux phi₂With said flux quantum phi₀Ratio phi of₂/Φ₀Tracking a path through a point where an effective phase shift of the current through the first device is 0.

10. The method of claim 9, wherein the path is a closed loop path.

11. The method of claim 1, wherein applying the first and second time-varying magnetic fluxes comprises changing a phase associated with each josephson junction of the SQUID by 2 pi.

12. The method of claim 1, further comprising cooling the first device below a superconducting critical temperature of a superconducting material in the superconducting trace.

13. The method of claim 1, wherein the first time-varying magnetic flux Φ is applied sequentially₁And the second time-varying magnetic flux phi₂。

14. The method of claim 12, whereinThe first time-varying magnetic flux phi₁And the second time-varying magnetic flux phi₂Overlap in time.

15. An apparatus, comprising:

a first device comprising

A superconducting trace, and

a superconducting quantum interference device (SQUID) having at least three nonlinear inductor junctions coupled in parallel, wherein a first terminal of the SQUID is electrically coupled to a first end of the superconducting trace and a second terminal of the SQUID is electrically coupled to a second end of the superconducting trace to form a loop; and

a second device disposed proximate to the first device, wherein a state of the second device is controllable by a bias generated by the first device.

16. The device of claim 14, wherein the second device is a qubit.

17. The device of claim 14, wherein the second device is a qubit coupler element.

18. A system, comprising:

a plurality of cells arranged in an i row by j column array, i being an integer greater than or equal to 1 and j being an integer greater than or equal to 2, wherein each cell of the plurality of cells comprises a corresponding magnetic flux control device comprising:

a superconducting trace, and

a superconducting quantum interference device (SQUID) having at least three parallel-coupled nonlinear inductor junctions, wherein a first terminal of the SQUID is electrically coupled to a first end of the superconducting trace and a second terminal of the SQUID is electrically coupled to a second end of the superconducting trace to form a loop.

19. The system of claim 17, wherein each unit of the plurality of units further comprises a corresponding second device positioned proximate to the magnetic flux control device.

20. The system of claim 18, wherein for each cell of the plurality of cells, the second means comprises a qubit.

21. The system of claim 18, wherein for each cell of the plurality of cells, the second means comprises a qubit coupler element.

22. The system of claim 18, further comprising:

i first control lines, wherein each of the i first control lines extends along a corresponding row of the array and is coupleable to each magnetic flux control device within the corresponding row; and

j second control lines, wherein each second control line of the j control lines extends along a corresponding column of the array and is coupleable to each magnetic flux control device within the corresponding column.

23. The system of claim 21, further comprising:

a row select generator coupled to the i first control lines, the row select generator configured to provide a unique corresponding signal to each of the i first control lines; and

a column select generator coupled to the j second control lines, the column select generator configured to provide a unique corresponding signal to each of the j second control lines.

24. A method of operating a multi-level memory device, the multi-level memory device comprising: (a) a superconducting trace and (b) a superconducting quantum interference device (SQUID) having at least three parallel-coupled nonlinear inductor junctions, wherein a first terminal of the SQUID is electrically coupled to a first end of the superconducting trace and a second terminal of the SQUID is electrically coupled to a second end of the superconducting trace to form a loop, the method comprising:

the first time-varying magnetic flux phi₁Applied to a first sub-loop of the SQUID and imparts a second time-varying magnetic flux Φ₂A second sub-loop applied to the SQUID to place the multi-level memory device in a first memory state.

25. The method of claim 22, wherein the first time-varying magnetic flux Φ is applied₁And applying a second time-varying magnetic flux phi₂Causing an output state of the multi-level memory device to change by a non-zero integer n.

26. The method of claim 22, further comprising coupling a third time-varying magnetic flux Φ₃Applied to the first sub-loop of the SQUID and imparts a fourth time-varying magnetic flux Φ₄Applying to the second sub-loop of the SQUID to place the multi-level memory device in a second memory state, wherein the second memory state is different from the first memory state.

Technical Field

The present invention relates to magnetic flux control in superconducting devices.

Background

Quantum computing is a relatively new computational method that utilizes quantum effects (e.g., basis state stacking and entanglement) to perform certain computations more efficiently than a typical digital computer. In contrast to digital computers that store and manipulate information in the form of bits (e.g., "1" or "0"), quantum computing systems may use qubits to manipulate information. Qubits may refer to quantum devices that enable superposition of multiple states (e.g., data in both a "0" state and a "1" state) and/or superposition of data itself in multiple states. According to conventional terminology, the superposition of "0" and "1" states in a quantum system may be represented as, for example, α -0>+β│1>. The "0" and "1" states of the digital computer are respectively similar to the-0 of the qubit>And | 1>The ground state. Value-alpha-²Indicates that the qubit is at-0>Probability of state, and value | β |²Indicates that the qubit is in-1>Probability of the base state.

Disclosure of Invention

In general, in some aspects, the subject matter of the invention can be embodied in methods comprising: generating a bias signal from a first device; and applying the bias signal to a second device, the first device including (a) a superconducting trace and (b) a superconducting quantum interference device (SQUID) having at least three parallel-coupled nonlinear inductor junctions, wherein a first terminal of the SQUID is electrically coupled to a first end of the superconducting trace and a second terminal of the SQUID is electrically coupled to a second end of the superconducting trace to form a loop, wherein generating the bias signal from the first device includes: the first time-varying magnetic flux phi₁A first sub-loop applied to the SQUID; and applying a second time-varying magnetic flux phi₂A second sub-loop applied to the SQUID, wherein the first time-varying magnetic flux Φ is applied₁And the second time-varying magnetic flux phi₂Such that the value of the superconducting phase of the first device is incremented or decremented by a non-zero integer multiple n of 2 pi.

Implementations of the method may include one or more of the following features. For example, in some implementations, the output state includes an effective phase shift of a current through the first device.

In some implementations, the output state includes an effective flux through the first device.

In some embodiments, the first time-varying magnetic flux Φ₁And said second time-varying magnetic flux phi₂Are each less than the flux quantum phi₀。

In some embodiments, the first time-varying magnetic flux Φ₁With said flux quantum phi₀Ratio phi of₁/Φ₀And the second time-varying magnetic flux phi₂With said flux quantum phi₀Ratio phi of₂/Φ₀A path is traced around a point at which a value of current through the first device is 0. The ratio Φ at the point where the current through the first device is 0₁/Φ₀And the ratio phi₂/Φ₀May be approximately equal to 1/3, for example. When the ratio phi₁/Φ₀And the ratio phi₂/Φ₀The integer multiple n is incremented when tracing the path in a first direction around the point at which the current through the first device is 0, or when the ratio Φ₁/Φ₀And the ratio phi₂/Φ₀The integer multiple n is decremented as the path is traced along a second direction opposite the first direction. The path may be a closed loop path.

In some embodiments, the first time-varying magnetic flux Φ₁With said flux quantum phi₀Ratio phi of₁/Φ₀And the second time-varying magnetic flux phi₂With said flux quantum phi₀Ratio phi of₂/Φ₀Tracking a path through a point where an effective phase shift of the current through the first device is 0. The path may be a closed loop path.

In some implementations, applying the first and second time-varying magnetic fluxes includes changing a phase associated with each josephson junction of the SQUID by 2 pi.

In some implementations, the method includes cooling the first device to below a superconducting critical temperature of a superconducting material in the superconducting trace.

In some embodiments, the first time-varying magnetic flux Φ is applied sequentially₁And the second time-varying magnetic flux phi₂. The first time-varying magnetic flux phi₁And the second time-varying magnetic flux phi₂May overlap in time.

In general, in some other aspects, the subject matter of this disclosure can be embodied in devices that include: a first device having a superconducting trace and a superconducting quantum interference device (SQUID), the SQUID having at least three parallel-coupled nonlinear inductor junctions, wherein a first terminal of the SQUID is electrically coupled to a first end of the superconducting trace and a second terminal of the SQUID is electrically coupled to a second end of the superconducting trace to form a loop; and a second device disposed proximate to the first device, wherein a state of the second device is controllable by a bias generated by the first device.

Implementations of the device may include one or more of the following features. For example, in some embodiments, the second device is a qubit.

In some embodiments, the second device is a qubit coupler element.

In general, in some other aspects, the subject matter of this disclosure can be embodied in a system comprising: a plurality of cells arranged in an array of M rows by N columns, M being an integer greater than or equal to 1 and N being an integer greater than or equal to 2, wherein each cell of the plurality of cells includes a corresponding magnetic flux control device having: a superconducting trace and a superconducting quantum interference device (SQUID), the SQUID having at least three parallel-coupled nonlinear inductor junctions, wherein a first terminal of the SQUID is electrically coupled to a first end of the superconducting trace and a second terminal of the SQUID is electrically coupled to a second end of the superconducting trace to form a loop.

Implementations of the system may include one or more of the following features. For example, in some implementations, each cell of the plurality of cells further includes a corresponding second device positioned proximate to the magnetic flux control device.

In some implementations, for each cell of the plurality of cells, the second device includes a qubit.

In some implementations, for each cell of the plurality of cells, the second device includes a qubit coupler element.

In some embodiments, the system further comprises: m first control lines, wherein each of the M first control lines extends along a corresponding row of the array and is coupleable to each magnetic flux control device within the corresponding row; and N second control lines, wherein each second control line of the N control lines extends along a corresponding column of the array and is coupleable to each magnetic flux control device within the corresponding column. The system may further include: a row select generator coupled to the M first control lines, the row select generator configured to provide a unique corresponding signal to each of the M first control lines; and a column select generator coupled to the N second control lines, the column select generator configured to provide a unique corresponding signal to each of the N second control lines.

In general, in some other aspects, the subject matter of this disclosure can be embodied in methods of operating a multi-level memory device that includes: (a) a superconducting trace and (b) a superconducting quantum interference device (SQUID) having at least three parallel-coupled nonlinear inductor junctions, wherein a first terminal of the SQUID is electrically coupled to a first end of the superconducting trace and a second terminal of the SQUID is electrically coupled to a second end of the superconducting trace to form a loop, the method comprising: the first time-varying magnetic flux phi₁Applied to a first sub-loop of the SQUID and imparts a second time-varying magnetic flux Φ₂A second sub-loop applied to the SQUID to place the multi-level memory device in a first memory state.

Implementations of the method may include one or more of the following features. For example, in some embodiments, the first time-varying magnetic flux Φ is applied₁And applying a second time-varying magnetic flux phi₂Causing an output state of the multi-level memory device to change by a non-zero integer n. In some implementations, the method includes varying the third time-varying magnetic flux Φ₃Applied to the first sub-loop of the SQUID and imparts a fourth time-varying magnetic flux Φ₄Applying to the second sub-loop of the SQUID to place the multi-level memory device in a second memory state, wherein the second memory state is different from the first memory state.

Particular implementations of the subject matter described herein may realize one or more of the following advantages. For example, in some embodiments, the magnetic flux control device of the present invention is capable of dissipating substantially little power, and thus provides an advantageous option as a control device for a quantum computing circuit element. For example, in certain embodiments, the magnetic flux control device of the present invention may dissipate less 10 than a CMOS-based or SFQ-based control device³To 10⁵Multiple power. Because the power dissipation, and therefore heat generation, of the magnetic flux control device is so low, the control device may even be arranged on the same chip as the quantum computing circuit elements in certain implementations without substantially increasing local chip temperature and/or causing a transition to an undesired energy state. In some implementations, the magnetic flux control device of the present invention may operate as a logical and gate, where a high output is generated (e.g., the magnetic flux control device output state changes) only when both inputs meet a predetermined criterion, and a low output is obtained (e.g., the magnetic flux control device output state does not change) if either of the inputs does not meet the predetermined criterion. The plurality of magnetic flux control devices may be arranged in an array or matrix configuration to provide multiplexing control for the plurality of quantum computing circuit elements. In some embodiments, the magnetic flux control device of the present invention may operate as a multi-level memory device.

The details of one or more implementations are set forth in the accompanying drawings and the description. Other features and advantages will be apparent from the description and drawings, and from the claims.

Detailed Description

Quantum computing requires coherent processing of quantum information stored in qubits (qubits) in a quantum computer. Superconducting quantum computing is a promising quantum computing technology implementation in which quantum computing circuit elements are formed in part from superconducting materials. Superconducting quantum computers are typically multilevel systems, where the two lowest energy levels are used as the basis for computation. Preferably, quantum circuit elements (e.g., quantum computing circuit elements) are operated with low energy loss and dissipation (e.g., the quantum computing circuit elements exhibit a high quality factor Q). Low energy loss and dissipation can help avoid quantum decoherence and/or transition to other undesirable energy states, for example.

One source of loss and dissipation is the heat generated by the control element (e.g., qubit control element). Qubit control elements may have different functions. For example, in some cases, the qubit control element provides a control signal (e.g., a flux bias) to tilt/perturb the dual-well potential during qubit operation. In some cases, the qubit control element provides control signals to adjust the amplitude of the potential barrier between potential wells or to change the operating frequency of the qubit during qubit operation. Additional control functions are also possible. Another example of a control element includes a qubit coupler control element that provides, for example, a control signal to modify a coupling strength between the qubit and the qubit coupler element. Other control elements are also possible.

Typically, the control element may be a relatively high power dissipation and hence heat generating source. When this control element is arranged on the same chip as a superconducting quantum computing circuit element (e.g., a qubit), the local energy dissipation level may cause significant heating relative to low temperatures (e.g., about 20mK) at which the quantum computing circuit element needs to be maintained to achieve superconductivity. The high energy dissipation and subsequent heat generation stages can therefore make it difficult to achieve the low temperatures at which the device is required to operate. Even for low power alternatives, such as Single Flux Quantum (SFQ) digital logic devices, the power dissipation stage may be too high.

The present invention relates to a magnetic flux control device capable of dissipating substantially little power and thus providing advantageous options as a control device for a quantum computing circuit element. For example, in certain embodiments, the magnetic flux control device of the present invention may dissipate less 10 than a CMOS-based or SFQ-based control device³To 10⁵Multiple power. Therefore, because of the magnetic fluxThe power dissipation, and hence heat generation, of the volume control device is so low that in certain implementations the control device can even be arranged on the same chip as the quantum computing circuit elements without substantially increasing the local chip temperature and/or causing a transition to an undesired energy state.

Changing the output state of the magnetic flux control device involves sequentially switching a plurality of individual time-varying input signals (e.g., magnetic flux signal Φ)₁、Φ₂) To the magnetic flux control device, wherein the time-varying input signal meets a predetermined criterion. The predetermined criteria may include causing a superconducting phase of the magnetic flux control device to change by up to 2 n, where n is a non-zero integer. More specifically, the predetermined criteria may include applying an input signal (e.g., a magnetic flux signal, e.g., Φ)₁And phi₂) So that the input signal and the flux quantum phi₀Ratio of (e.g., #)₁/Φ₀And phi₂/Φ₀) A path around the critical point, such as a closed loop path, is tracked. The critical point may correspond to a location at which the current I through the device is 0. For example, when phi₁/Φ₀＝Φ₂/Φ₀A critical point occurs at 1/3. In some implementations, the predetermined criteria can include applying an input signal (e.g., a magnetic flux signal Φ)₁And phi₂) So that the input signal and the flux quantum phi₀Ratio of (e.g., #)₁/Φ₀And phi₂/Φ₀) The effective phase shift of the current I of the tracking flux control device is the path of the point at which 0 is located, e.g. a closed loop path.

When the applied flux meets a predetermined criterion, the output state of the magnetic flux control device changes. For example, the effective flux through the flux control device (as opposed to the magnetic field applied to the flux control device) changes the flux quantum Φ₀N is a non-zero integer. In contrast, when the applied flux signal does not meet the predetermined criterion, the output state of the magnetic flux control device does not change. For example, the effective flux through the magnetic flux control device is constant. Thus, in some embodiments, the magnetic flux control device of the present invention may operate as a logical AND gate, where only two inputs are presentA high output (e.g., a change in the output state of the flux control device) is generated when none of the inputs meet a predetermined value, and a low output (e.g., a constant output state of the flux control device) is obtained if none of the inputs meet a predetermined criterion. The plurality of magnetic flux control devices may be arranged in an array or matrix configuration to provide multiplexing control for the plurality of quantum computing circuit elements.

In some embodiments, the magnetic flux control device of the present invention may operate as a multi-level memory device. That is, since the output state (e.g., effective flux or superconducting phase) of the magnetic flux control device is proportional to n, each integer change in n may correspond to a different memory state. As will be appreciated from the present invention, other applications and advantages of the magnetic flux control device are also possible.

Fig. 1 is a schematic diagram illustrating an example of a magnetic flux control device 100 and a second device 150, such as a qubit. Both the control device 100 and the second device 150 may be formed on a dielectric substrate, such as silicon or sapphire. In this example, the second device 150 is a two-junction qubit that includes superconducting traces 114 arranged in a loop or ring structure. The superconducting traces 114 are coupled to the corresponding nonlinear inductor junctions 110, 112 in two separate locations. In examples disclosed herein, a nonlinear inductor junction may include a josephson junction, which is a quantum mechanical device made of two superconducting electrodes separated by an insulating barrier. An example of a josephson junction includes an aluminum oxide layer sandwiched between a first aluminum layer and a second aluminum layer. The superconducting traces 114 may be formed of a material capable of achieving superconductivity. For example, the traces 114 may be formed from aluminum or niobium. The second device 150 is not limited to the configuration shown in fig. 1 and may instead include other designs, including other qubit designs. For example, in some implementations, the second device 150 includes a phase qubit, a charge qubit, or a flux qubit. Examples of flux qubits that can be used include, for example, a fluxmon qubit, a gmon qubit, or an x-mon qubit. Qubits may include two, three, four or other numbers of josephson junctions. Other qubit configurations are also possible. The second device 150 may include devices other than qubits. For example, in some implementations, the second device 150 includes a qubit coupler element. The qubit coupler element may comprise, for example, a resonator element, such as a superconducting resonator element.

The second device 150 is disposed proximate the magnetic flux control device 100 such that the second device 150 is exposed to a bias signal generated by the magnetic flux control device 100. The bias signal generated by the magnetic flux control device 100 may comprise a magnetic flux M generated by the magnetic flux control device 100.

The magnetic flux control device 100 includes a superconducting trace 102, where one end of the superconducting trace 102 is connected to a first terminal 106 of a superconducting quantum interference device (SQUID)104 and a second end of the superconducting trace 102 is connected to a second terminal 108 of the SQUID 104 to form a loop structure or loop 101. The superconducting traces 102 may be formed of a material capable of achieving superconductivity. For example, the traces 102 may be formed from aluminum or niobium. Operation of the magnetic flux control device 100 includes cooling the magnetic flux control device 100 below the superconducting critical temperature of the superconducting material in the device 100, and then applying a plurality of input signals (e.g., time-varying magnetic flux signals) to the SQUID 104 such that a current I is generated in the superconducting trace 102. The current I traveling through the superconducting trace 102 generates a magnetic flux M that may be inductively coupled to a second device 150 positioned near the magnetic flux control device 105.

The current I can be expressed as I ≈ n Φ₀L, where n is an integer, L is the dominant inductance of the loop (e.g., the inductance of the loop formed by superconducting trace 102 and SQUID 104), and Φ₀Is a flux quantum, which can be expressed as h/2e, where h is the planckian constant and e is the charge on the electron.

The state of the second device 150 may be controlled by a bias signal generated by the magnetic flux control device 100. That is, based on the particular magnetic flux signal applied to the SQUID 104, in certain implementations, the value of n may be changed and the current I or effective flux M generated by the device 100 and received by the second device 150 (where M may be expressed as approximately M ≈ n Φ₀). Thus, in some embodiments, the magnetic flux control device 100 serves as a control element for an external device (e.g., the second device 150). For example, the magnetic flux control device 100 can be used to modify the slope of the qubit potential well, modify the magnitude of the qubit potential well barrier amplitude based on the value of n, or change the qubit frequency.

Although the second device 150 is shown as a superconducting qubit in the example, other devices may be used instead. For example, in some embodiments, the bias signal generated by the magnetic flux control device 100 may be used to control a qubit coupler element. That is, the bias voltage (e.g., magnetic flux or current signal) generated by the device 100 may be altered to cause a corresponding change in the coupling strength of the qubit coupler element. Alternatively, the bias voltage generated by the apparatus 100 may be altered to cause a corresponding change in the frequency of the qubit coupler element.

Fig. 2 is a schematic diagram illustrating an example of a SQUID200 that may be used as element 104 in magnetic flux control device 100. SQUID200 is a three junction SQUID, meaning SQUID200 includes three nonlinear inductor junctions 210, 220, and 230. The nonlinear inductor junctions 210, 220, and 230 are electrically coupled in parallel directly to each other at the first terminal 206 and the second terminal 208. For example, nonlinear inductor junctions 210, 220, and 230 may be electrically coupled in parallel with one another through superconducting trace 202. Superconducting traces 202 may be formed from materials capable of achieving superconductivity. For example, trace 202 may be formed from aluminum or niobium. Terminal 206 is equivalent to terminal 106 and terminal 208 is equivalent to terminal 108, as shown in fig. 1.

By coupling the junctions 210, 220, and 230 together in this manner, two loops (sub-loop 240 and sub-loop 250) are provided. Sub-loop 240 is defined by a current path through nonlinear inductor junction 210, superconducting trace 202, and nonlinear inductor junction 220. Sub-loop 250 is defined by a current path through nonlinear inductor junction 220, superconducting trace 202, and nonlinear inductor junction 230. When the SQUID200 is coupled to a superconductor trace (such as trace 102 in the example of figure 1), the sub-loops 240, 250 correspond to the sub-loops of the larger ring defined by the current path through trace 102 and SQUID 200.

The operation of magnetic flux control device 100 is described herein using SQUID200 as an example of element 104, but other SQUID designs may also be used as element 104. For example, although SQUID200 is illustrated in figure 2 as having three non-linear inductive junctions in parallel, SQUIDs having more than three non-linear inductive junctions may be used instead. In some implementations, SQUIDs having four, five, six, or other numbers of parallel-coupled nonlinear inductor junctions can be used instead. Where the SQUID includes more than three nonlinear inductor junctions/more than two sub-loops, the output state of the magnetic flux control device may still be changed by applying a corresponding magnetic flux signal to each sub-loop, where the magnetic flux signal meets predetermined criteria, as explained herein.

During operation of the magnetic flux control device 100, two input signals (e.g., time-varying magnetic flux signals Φ) are separately applied_LAnd phi_R) To the sub-loops 240 and 250 of the SQUID 200. The magnetic field may be provided by positioning a separate inductor (e.g., a superconducting trace) adjacent to each of the sub-loops 240, 250 and providing a current through the inductor to generate the magnetic field. Applying a time-varying flux to the two loops results in the generation of a current through each nonlinear inductor junction of the SQUID 200. The current through the junction 210 may be represented as I₀sin(δ-2πΦ_LΦ₀) In which I₀Is the critical current through the junction (the value of which can be set by the junction fabrication process), δ is the phase difference across the device, and Φ₀Is a flux quantum. The current through junction 230 may be denoted as I₀sin(δ+2πΦ_LΦ₀). The current through the central junction 220 may be denoted as I₀sin(δ)。

The current I (δ) through the SQUID200 (i.e., the current passing from terminal 208 to terminal 206) may then be represented as a combination of the currents through each nonlinear inductive junction or:

I(δ)＝I₀sin(δ)+I₀sin(δ+2πΦ_LΦ₀)+I₀sin(δ-2πΦ_LΦ₀)

＝Im{I₀e^iδ(1+e^i2πΦR/Φ0+e^-i2πΦL/Φ0)

＝I_0e(Φ_R,Φ_L)sin[δ+φ(Φ_R,Φ_L)]，

wherein I_0eIs taken as phi_RAnd phi_LIs the effective critical current of SQUID200, and phi is as phi_RAnd phi_LEffective phase shift of the current I (δ) as a function of (d).

The foregoing equation applies to the limit where the inductance of the sub-loop is small (e.g., where the josephson inductance of the flux control device is less than the loop inductance L of the flux control device). Figure 3A is a graph illustrating a first time-varying magnetic flux signal 300 (depicted as Φ in figure 3A) applied to the first sub-loop 240 of the SQUID200 of figure 2_L) And a second time-varying magnetic flux signal 302 (depicted as Φ in figure 3A) applied to a second sub-loop 250 of the SQUID200 of figure 2_R) Schematic diagram of an example waveform of (a). The output state of the magnetic flux control device 100 may be changed by altering the first time-varying magnetic flux signal 300 and the second time-varying magnetic flux signal 302 according to a predetermined criterion. In particular, the effective phase shift φ, and thus the superconducting phase change, of the current I through the SQUID200 can be induced by up to 2 π n, where n is an integer. As explained herein, the current I through the flux device may also be denoted as I ═ n Φ₀And L. Since each change of the effective phase shift phi by 2 pi is equivalent to a change of n by 1, the current I proportional to n will also change. That is, changing the effective phase shift by 2 π changes the effective flux through the loop of the magnetic flux control device (where, for example, the loop is defined by the traces 102 and the SQUID element 104) by Φ₀This changes the loop current by approximately phi₀And L. Thus, an integer change in n can be achieved by applying an input signal to SQUID200 to change the phase associated with the josephson junction by 2 pi. In contrast, when the signals (e.g., magnetic flux signals) applied to the first and second sub-loops 240 and 250 do not meet a predetermined criterion, the output state of the magnetic flux control device does not change.

Waveforms 300 and 302 are examples of magnetic flux signals that meet predetermined criteria to change the phase of current I. The waveforms 300 and 302 are divided into four separate time segments T ═ 1, 2, 3, and 4. During the first time period T-1, the amplitudes of both the flux 300 and the flux 302 have the same initial value, e.g. both fluxes are zero. During the second period T-2, the amplitude of the flux 300 increases linearlyTo a maximum (e.g. flux quantum phi)₀) While the amplitude of the flux 302 remains at its initial value. For example, the amplitude of the flux 302 remains zero. During the third time period T-3, the amplitude of flux 300 begins to decrease linearly towards the final value, while the amplitude of flux 302 begins to increase linearly to a maximum value, e.g., Φ₀. In some embodiments, the final value of the flux 300 may be equal to the initial value (e.g., zero), although other final values are possible. During the fourth time period T-4, the magnitude of flux 300 does not change, while the magnitude of flux 302 begins to decrease linearly to a final value. For example, in some embodiments, the final value of the flux 302 may be equal to the initial value (e.g., zero), although other final values are possible.

Fig. 3B is the amplitude (depicted as Φ) of the first magnetic flux signal 300 at the different time periods T ═ 1, 2, 3, and 4 shown in fig. 3A_L) Relative to the amplitude of the second magnetic flux signal 302 (depicted as Φ)_R) A graph of (a). As illustrated in FIG. 3B, the amplitudes of the magnetic flux signals plotted against each other track the closed loop path, with a maximum value of Φ₀. By applying the magnetic flux signal in the aforementioned manner, the phase change across the magnetic flux control device is up to 2 π, i.e., the effective flux through the magnetic flux control device is changed by Φ₀。

The criteria required for an applied signal to cause an effective phase shift phi to change by 2 pi can be understood by referring to fig. 4 and 5. FIG. 4 is a graph illustrating phi₀Normalized first magnetic flux waveform 300 (represented as Φ in FIG. 4)_L) Amplitude of (c) to phi₀Normalized second magnetic flux waveform 302 (represented as Φ in FIG. 4)_R) And a graph covered by a heat map depicting the effective critical current I_0eAnd the critical current I through the flux control device 100₀The ratio of (a) to (b). Phi_L/Φ₀And phi_R/Φ₀Tracks the closed loop path 400 around the heat map. For each position along the closed-loop path 400, the ratio I_0e/I₀Determined from a heat map at the location. To obtain a change in the effective phase shift φ by 2 π, the applied flux tracks a closed loop path around the critical point 402 on the heat map. In bookIn the example, the critical point 402 corresponds to the ratio I_0e/I₀Equal to the position of 0. Thus, when the magnetic flux applied to the first and second sub-loops of the SQUID200 completes a closed loop path around the critical point 402, the effective phase shift Φ across the magnetic flux control device 100 changes by up to 2 π, resulting in a change in n by up to 1. In this example, the critical point 402 occurs at a value Φ approximately equal to 1/3_L/Φ₀And phi_R/Φ₀To (3). The value at which the critical point occurs may vary depending on the inductance of the magnetic flux control device loop (e.g., determined by trace 102 and SQUID element 104 shown in fig. 1). When the magnetic flux is applied such that the closed loop path 400 is tracked in a counter-clockwise manner, the phase increases by up to 2 pi per full revolution. For example, if the overlapping magnetic flux signals shown in fig. 3A are repeated again, the effective phase shift across the magnetic flux devices will increase by another 2 π and n by 2.

Alternatively, it can be understood from FIG. 5 that integer changes to Φ are useful for achieving a 2 π phase change and thus effective flux across magnetic flux control device 100₀Is determined. FIG. 5 is a graph illustrating phi₀Normalized first magnetic flux waveform 300 (represented as Φ in FIG. 5)_L) Amplitude of (c) to phi₀Normalized second magnetic flux waveform 302 (represented as Φ in FIG. 5)_R) And covered by a thermal map depicting a phase shift phi (phi) across the magnetic flux control device 100_R、Φ_L) (where the phase shift is in degrees). Phi_L/Φ₀And phi_R/Φ₀Tracks the closed loop path 500 around the heat map. For each location along closed loop path 500, the effective phase shift across the magnetic flux control device is determined from the thermal map at that location. To obtain a phase shift phi (phi)_R、Φ_L) Up to a 2 pi change, the closed loop path passes through a location (e.g., line 502) on the heat map where the phase goes from negative to zero to positive (or from positive to zero to negative, depending on the direction the path is tracked). Also, when the magnetic flux is applied such that the closed loop path 500 is tracked in a counterclockwise manner, the effective phase shift increases by up to 2 π per full revolution.

As shown in FIG. 3A, waveforms may be applied to the SQUI in sequenceEach sub-loop of D200 and may overlap in time. From phi_L/Φ₀And phi_R/Φ₀The particular trajectory tracked is not critical to achieving a 2 pi phase transition, so long as the predetermined criteria are met when the magnetic flux signal is applied to the sub-loops of the SQUID 200. For example, the magnetic flux waveforms 300 and 302 are shown in FIG. 3 as phase-shifted sawtooth patterns. Other waveforms may be used instead. For example, the waveform may have a sinusoidal or other shape. In some implementations, a step-up function can be used to obtain a change in the first waveform and/or the second waveform from an initial value to a maximum value. Alternatively, in some implementations, a step-wise decreasing function may be used to obtain the change from the maximum value to the final value in the first waveform and/or the second waveform. In some embodiments, the maximum achieved by the first waveform is different from the maximum achieved by the second waveform. However, to achieve a change of n by 1, the maximum amplitude of the flux (Φ) applied to each sub-loop of SQUID200_LAnd phi_R) Flux quantum value phi should not be exceeded₀. In some embodiments, the magnitude of the flux applied to each sub-loop of SQUID200 may exceed the flux quantum Φ₀Causing an additional critical point to be enclosed, resulting in n changing by an integer greater than 1.

In some embodiments, the waveform applied to the first sub-loop 240 of the SQUID200 is different from the waveform applied to the second sub-loop 250 of the SQUID 200. In some implementations, the initial value and/or the final value of the first waveform and/or the second waveform is non-zero. The waveform shown in fig. 3A depicts the magnitude of flux increasing from a relatively low initial value to a higher maximum value and returning to a low final value. However, in some embodiments, the change in flux amplitude may be reversed. For example, the flux amplitude of each waveform may start at a relatively high initial value, decrease to a lower minimum value, and then increase to a higher final value. Such waveforms, when applied to the SQUID200, may cause the triangular path shown in figure 3B to flip laterally about the vertical axis.

The phase shift between the maximum of the first waveform and the maximum of the second waveform may also vary, as long as the waveforms overlap to achieve an allowable effective phase shift φThe predetermined criterion may be changed by up to 2 pi. For example, although fig. 3A shows the first waveform 300 reaching a maximum value before the second waveform 302 reaches a maximum value, the application of the waveforms may be reversed such that the second waveform 302 reaches a maximum value before the first waveform 300 reaches a maximum value. In this case, from Φ_L/Φ₀And phi_R/Φ₀The tracked trajectory will progress in the opposite direction to that shown in fig. 3B. I.e. from phi_L/Φ₀And phi_R/Φ₀The tracked trajectory will progress in a clockwise manner rather than around the closed loop path in a counterclockwise manner as shown in fig. 3B. Reverse direction from phi_L/Φ₀And phi_R/Φ₀The tracked trajectory causes the effective phase shift phi to decrease by an integer multiple of 2 pi each time. With each 2 pi phase decrease, the value n decreases by 1. Thus, the sign of the change in n depends on the direction in which the trajectory of the magnetic flux applied to the SQUID sub-loop encloses the critical point. The absolute value of n is determined by the number of consecutive times that the input signal to the SQUID of the magnetic flux control device causes the effective phase shift to increase or decrease by 2 pi. For example, if the effective phase shift increases by 6 π, then n is 3. In another example, if the effective phase shift is reduced by 6 π, then n-3. In another example, if the effective phase shift increases by 6 π and then decreases by 2 π, then n is 2.

To avoid coupling to the resonant frequency of the sub-loops of SQUID200, the flux applied to each sub-loop should be associated with a corresponding frequency that is less than the resonant frequency of the sub-loop (e.g., the resonant frequency of the SQUID sub-loop may be in the range of 10GHz to 50GHz in some cases). In some implementations, reducing the frequency of the applied flux signal can reduce the power dissipation of the device. This is because as the operating frequency decreases, the voltage generated by the device decreases. At lower voltages, the power dissipated by the operation of the magnetic flux control device is reduced.

As explained with respect to fig. 1, the current I through magnetic flux device 100 may be represented as I ═ n Φ₀L, where L is the inductance of the superconducting trace 102. To achieve even finer changes in I, the superconducting traces 102 may be added by adding additional inductive material to the device 100The inductance of (2). Fig. 6 is a schematic illustrating an example of a magnetic flux control device 600 in which the effective inductance L of the device 600 is modified by adding an additional loop of superconducting traces 616 and an additional 3-junction element 620 (e.g., a 3-junction SQUID, such as the SQUID200 shown in fig. 2) coupled to the traces 602. A first portion of device 600 including traces 602 and SQUID 604 is the same as device 100 shown in figure 1 and is identical to inductance L₁And (4) associating. The second portion of the device 600 includes a second trace 616 with an additional 3-junction element 620 and an inductance L₂Associated and coupled with trace 602. By adding trace 616 and 3-junction element 620, finer current control of the output current may be obtained. This is because the quantized current in the lower loop (trace 602 and element 604) is shared between the common wires of the upper loop and the lower loop (trace 616 and element 620). Thus, the quantized current I in the lower loop₂＝n₂Φ₀/L₂Producing a small flux MI in the upper loop proportional to the mutual inductance M of the shared conductor₂Followed by finer control of I ═ n₂Φ₀M/L₁L₂The output current is varied. In this manner, the magnetic flux device enables finer control of the second device 650 (e.g., a qubit or qubit coupler element).

As explained herein, the value of n does not change if the flux applied to the SQUID200 does not meet a predetermined criterion. For example, if the applied flux fails to track a closed loop path around the critical point corresponding to current I ═ 0, then the value of n will not change. Alternatively, if the applied flux fails to track a path through the point at which the phase of the magnetic flux control device transitions between positive and negative values as described herein, the value of n will not change.

The process for changing the output state of the flux control device is close to adiabatic. In some embodiments, the magnetic flux control device of the present invention may dissipate less 10 than a CMOS-based or SFQ-based control device³To 10⁵Multiple power. Therefore, the magnetic flux control apparatus of the present invention generates very little heat. In addition, the magnetic flux control device of the present invention does not need to use any other qubit control device (e.g., SFQ-based control device)An on-chip damping resistor. Because the power dissipation, and therefore heat generation, of the magnetic flux control device is so low, the magnetic flux control device can be arranged on or near the same chip as the quantum computing circuit elements without substantially increasing the local chip temperature above a desired operating temperature (e.g., 20mK), without causing a transition to an undesired energy state or causing decoherence.

The magnetic flux control devices of the present disclosure, such as the devices shown in fig. 1 and 6, may be used as control elements, such as quantum circuit elements (e.g., quantum computing circuit elements), for applying a bias voltage to one or more other devices. For example, in some embodiments, the magnetic flux control device of the present invention can be used to apply a particular bias (e.g., a magnetic flux signal or a current signal) to a superconducting qubit (e.g., a flux qubit, a phase qubit, or a charge qubit). The bias from the magnetic flux control device may be used to initialize the superconducting qubit to a particular desired state, to adjust the operating frequency of the superconducting qubit to a predetermined frequency, to tilt/perturb the double-well potential exhibited by the superconducting qubit, and/or to adjust the amplitude of the potential barrier between the potential wells exhibited by the superconducting qubit. For example by varying the first time-varying magnetic flux phi₁Applied to a first sub-loop of a SQUID element of a magnetic flux control device and converts a second time-varying magnetic flux phi₂Second sub-loop applied to SQUID (in which first time-varying magnetic flux Φ)₁And a second time-varying magnetic flux phi₂Meeting predetermined criteria as explained herein), the bias voltage supplied by the magnetic flux control device may vary by a non-zero integer multiple n. For example, the magnetic flux signal or current signal generated by the flux control device may be incremented or decremented to the flux quantum Φ₀Thereby causing a change in the state (e.g., operating frequency) of the qubit.

In some implementations, the magnetic flux control devices of the present invention (such as the devices shown in fig. 1 and 6) can be used to apply a particular bias voltage (e.g., a magnetic flux signal or a current signal) to a superconducting qubit coupling element. The bias from the magnetic flux control device can be used to increase or decrease the coupling strength of the superconducting qubit coupling element such that it can be modifiedThe degree of coupling between two or more qubits. For example by varying the first time-varying magnetic flux phi₁Applied to a first sub-loop of a SQUID element of a magnetic flux control device and converts a second time-varying magnetic flux phi₂Second sub-loop applied to SQUID (in which first time-varying magnetic flux Φ)₁And a second time-varying magnetic flux phi₂Meeting a predetermined criterion as explained herein), the magnetic flux signal or current signal generated by the magnetic flux control device may be incremented or decremented to the flux quantum Φ₀Is used to generate a non-zero integer multiple n of n, resulting in a corresponding change in the coupling strength of the superconducting qubit coupling element. Alternatively or additionally, the bias generated by the flux control device may be used to tune the frequency of the qubit coupler.

A magnetic flux control device according to the present invention requires at least two input signals (e.g., one for each sub-loop of the SQUID) and changes output state (e.g., current I or flux M) only when the input signals meet predetermined criteria. In all other cases, the output state of the device is unchanged. Thus, in some embodiments, the magnetic flux control device is adapted to function as a logic and gate. That is, only when an input signal having the necessary predetermined criteria is applied to both sub-loops of the SQUID does the effective phase shift of the device change by 2 π, so that the effective flux through the device changes by the flux quantum Φ₀(e.g., output 1). In all other cases (i.e. when only one magnetic flux signal with a time-varying amplitude is applied or when no magnetic flux signal with a time-varying amplitude is applied), the effective flux will be unchanged (e.g. output 0).

In some implementations, multiple magnetic flux control devices may be combined with corresponding circuit elements (e.g., quantum circuit elements) in an array to provide controllable matrix addressing of the circuit elements (e.g., quantum circuit elements). Fig. 7 is a schematic diagram illustrating an example of a controllable matrix array 700 of magnetic flux control devices. As shown in fig. 7, the array 700 includes a plurality of cells 702, 704, 706, and 708 arranged in rows and columns. Each cell 702, 704, 706, and 708 includes a magnetic flux control device, such as the magnetic flux control devices described herein. For example, in some implementations, the magnetic flux control device includes a superconducting trace coupled to a SQUID having three parallel-coupled nonlinear inductor junctions. Each cell 702, 704, 706, and 708 also includes a circuit element positioned adjacent to the magnetic flux control device. The circuit elements may include, for example, qubits and/or qubit coupling elements. Other circuit elements are also possible.

The array 700 also includes a plurality of vertical control lines (e.g., control lines 712, 714). Each vertical control line extends along a corresponding column of the array 700 and is positioned alongside each cell within that column. For example, control line 712 is positioned alongside cells 702 and 706, while control line 714 is arranged alongside cells 704 and 708. The vertical control lines may be formed from superconducting traces and associated with corresponding inductances.

The array 700 also includes a plurality of horizontal control lines (e.g., control lines 716, 718). Each horizontal control line extends along a corresponding column of the array 700 and is positioned alongside each cell within the column. For example, control line 716 is positioned next to cells 702 and 704, while control line 718 is positioned next to cells 706 and 708. The horizontal control lines may be formed from superconducting traces and associated with corresponding inductances.

Vertical control lines (e.g., lines 712, 714) are coupled to (e.g., electrically connected to) column select generator 710. The horizontal control lines (e.g., lines 716, 718) are coupled to (e.g., electrically connected to) a row select generator 720. Each of the column select generator 710 and row select generator includes circuitry (e.g., a current source) configured to generate a waveform applied to the control lines. The column select generator and row select generator may be configured to provide a unique waveform to each control line to which the generators are coupled. For example, in some implementations, the column select generators may be programmed to deliver unique waveforms to each vertical control line, while the row select generators may be programmed to deliver unique waveforms to each horizontal control line.

Thus, given an i x j matrix of cells, where each cell includes a circuit element (e.g., a quantum circuit element such as a qubit or qubit coupler element) and a corresponding magnetic flux control device, the number of connectors required to address the circuit element is i + j. Furthermore, the magnetic flux control device of each cell in the matrix is used to actively maintain the state of the circuit elements when addressing other cells, thus preventing cross-talk from inadvertently changing the state of unaddressed cells. That is, when an input signal meeting a predetermined criterion as described herein is supplied to the magnetic flux control device, the magnetic flux control device is placed in a persistent output state (e.g., the magnetic flux control device generates a persistent current) that does not change until and unless the input signal meeting the predetermined criterion is again applied to change the output state. Thus, there is no need to provide a continuous application of the input signal to the cell to maintain the desired output state. Furthermore, because the control device can actively maintain the state of the circuit elements, the total power dissipation required to address the array is significantly lower than would be required if each cell had to be addressed successively to maintain its state.

In some implementations, the magnetic flux control device of the present invention can be used as a multi-level memory device. As explained herein, the current I through a magnetic flux device may be denoted as I ═ M/L, where M is the flux through the superconducting loops of the device and may be denoted as M ═ n Φ₀. With each 2 pi change in the effective phase shift of the magnetic flux control device, the integer value n changes by 1, resulting in a corresponding change in the output state (e.g., current I or magnetic flux M) of the magnetic flux control device. The output state of the device is unchanged unless there is another 2 pi change in the effective phase shift of the flux control device. Thus, depending on the value of n, the magnetic flux control device may be placed in a variety of different output or "memory" states. That is, different values of I (or different magnetic fluxes M) generated by the control device may represent different memory states, where each memory state will be maintained until and unless an appropriate flux signal is applied to the magnetic flux control device to change n again.

FIG. 8 is a table illustrating examples of different output states that may be established by a multi-level memory based flux control device according to the present invention. As shown in fig. 8, four different output states of a magnetic flux control device (e.g., device 100) are present. Each output state is mapped to a corresponding information bit. For example, a multi-level memory can be programmed to be in one of four different memory states (e.g., n +1, n +2, and n +3 corresponding to binary values "00", "01", "10", and "11", respectively).

Writing to multilevel memory includes applying a magnetic flux signal to a SQUID element of a magnetic flux control device, wherein the magnetic flux signal conforms to an effective phase shift change of the device

A predetermined criterion required to be an integer multiple of 2 pi. Evaluating the effective phase shift change shown in the table of FIG. 8 from a first memory state n

For example, to change the memory state of a multi-level memory from a first memory state to a second memory state (e.g., from "00" to "01"), a flux signal is applied to the device to change the effective phase shift by 2 π. To change the device from the first memory state to the third memory state (e.g., from "00" to "10"), a flux signal is applied to the device to change phase by 4 π. To change the device from the first memory state to the fourth memory state (e.g., from "00" to "11"), a flux signal is applied to the device to change the effective phase shift by 6 π. Similarly, to change the device from the fourth memory state to the first memory state (e.g., from "11" to "00"), a flux signal is applied to the device to change the effective phase shift by-6 π. To change the device from the fourth memory state to the second memory state (e.g., from "11" to "01"), a flux signal is applied to the device to change the effective phase shift by-4 π. To change the device from the fourth memory state to the third memory state (e.g., from "11" to "10"), a flux signal is applied to the device to change the effective phase shift by-2 π. Although the device associated with FIG. 8 is shown with only four different memory states, other numbers of memory states may be usedStatus. In some implementations, the limit on the number of memory states can be defined based on which time period is acceptable to change the phase of the memory device.

Implementations of quantum themes and quantum operations described in this specification may be implemented in suitable quantum circuits or, more generally, quantum computing systems, including the structures disclosed in this specification and structural equivalents thereof or one or more combinations thereof. The term "quantum computing system" may include, but is not limited to, a quantum computer, a quantum information processing system, a quantum cryptography system, a topological quantum computer, or a quantum simulator.

The terms quantum information and quantum data refer to information or data carried, held, or stored by a quantum system, where the smallest nontrivial system is a qubit, such as a system that defines a unit of quantum information. It is to be understood that the term "qubit" encompasses all quantum systems that can be appropriately approximated as two-stage systems in the corresponding context. Such quantum systems may include, for example, multi-stage systems having two or more stages. For example, such systems may include atomic, electronic, photonic, ionic, or superconducting qubits. In some embodiments, the calculation ground state is identified as having a ground state and a first excited state, however it should be understood that other arrangements are possible in which the calculation device is identified as having a higher order excited state. It is understood that quantum memory is a device that can store quantum data for long periods of time with high fidelity and efficiency, such as an optical-to-matter interface, where light is used for transmission and matter is used to store and preserve quantum features of quantum data (e.g., superposition or quantum coherence).

Quantum circuit elements (also referred to as quantum computing circuit elements) include circuit elements for performing quantum processing operations. That is, quantum circuit elements are configured to perform operations on data in a non-deterministic manner using quantum mechanical phenomena, such as superposition and entanglement. Some quantum circuit elements, such as qubits, may be configured to simultaneously represent and manipulate information in more than one state. Examples of superconducting quantum circuit elements include, among others, circuit elements such as quantum LC oscillators, qubits (e.g., flux qubits, phase qubits, or charge qubits), and superconducting quantum interference devices (SQUIDs) (e.g., RF-SQUIDs or DC-SQUIDs).

In contrast, typical circuit elements often process data in a deterministic manner. Typical circuit elements may be configured to collectively carry out the instructions of a computer program by performing basic arithmetic, logical, and/or input/output operations on data, where the data is represented in analog or digital form. In some implementations, a typical circuit element can be used to transmit data to and/or receive data from a quantum circuit element through an electrical or electromagnetic connection. Examples of typical circuit elements include CMOS circuit-based circuit elements, fast single-flux quantum (RSFQ) devices, Reversible Quantum Logic (RQL) devices, and ERSFQ devices, which are power-saving versions of RSFQ that do not use bias resistors.

Fabrication of the quantum circuit elements and typical circuit elements described herein may require deposition of one or more materials, such as superconductors, dielectrics, and/or metals. Depending on the materials selected, these materials may be deposited using deposition processes such as chemical vapor deposition, physical vapor deposition (e.g., evaporation or sputtering), or epitaxial techniques, among others. The processes for fabricating the circuit elements described herein may require removal of one or more materials from the device during fabrication. Depending on the material to be removed, the removal process may comprise, for example, a wet etching technique, a dry etching technique, or a lift-off process. The materials forming the circuit elements described herein may be patterned using known lithographic techniques (e.g., photolithography or e-beam lithography).

During operation of a quantum computing system using superconducting quantum circuit elements and/or typical superconducting circuit elements (such as the circuit elements described herein), the superconducting circuit elements are cooled within a cryostat to a temperature that allows the superconducting material to exhibit superconducting properties. A superconductor (alternatively superconducting) material may be understood as a material that exhibits superconducting properties at or below a superconducting critical temperature. Examples of the superconducting material include aluminum (superconducting critical temperature of 1.2 kelvin) and niobium (superconducting critical temperature of 9.3 kelvin).

While this specification contains many specific implementation details, these should not be construed as limitations on the scope of what may be claimed, but rather as descriptions of features that may be specific to particular implementations. Certain features that are described in this specification in the context of separate embodiments can also be implemented in combination in a single embodiment. Conversely, various features that are described in the context of a single embodiment can also be implemented in multiple embodiments separately or in any suitable subcombination. Moreover, although features may be described above as acting in certain combinations and even initially claimed as such, one or more features from a claimed combination can in some cases be excised from the combination, and the claimed combination may be directed to a subcombination or variation of a subcombination.

Similarly, while operations are depicted in the drawings in a particular order, this should not be understood as requiring that such operations be performed in the particular order shown or in sequential order, or that all illustrated operations be performed, to achieve desirable results. For example, the actions recited in the claims can be performed in a different order and still achieve desirable results. In some cases, multitasking and parallel processing may be advantageous. Moreover, the separation of various components in the embodiments described above should not be understood as requiring such separation in all embodiments.

Several embodiments have been described. Nevertheless, it will be understood that various modifications may be made without departing from the spirit and scope of the invention. Accordingly, other embodiments are within the scope of the following claims.