阅读说明：本技术 一种磁性随机存储器及其制备方法和控制方法 (Magnetic random access memory and preparation method and control method thereof ) 是由 卢世阳 刘宏喜 曹凯华 王戈飞 赵巍胜 于 2021-07-23 设计创作，主要内容包括：本发明公开了一种磁性随机存储器及其制备方法和控制方法,涉及隧穿磁电阻领域,步骤包括：构建所述磁性随机存储器的底部层级结构；构建混合式重金属层；构建剩余隧穿磁隧道结膜层结构；构建加工隧穿磁隧道结。所述方法通过在底层衬底结构上表面构建混合式重金属层,在不同材质金属层上表面溅射生成完整磁隧道结,针对重金属层通入电流,利用不同材质的自旋霍尔角角度和大小不同的性质,使所述重金属层在通入电流时实现多模态翻转动作。结合其磁性随机存储器本身良好的存储性能,可实现计算机的“逻辑存储一体化”,从而实现对计算机运算速度的提升。(The invention discloses a magnetic random access memory and a preparation method and a control method thereof, relating to the field of tunneling magnetoresistance, comprising the following steps: building a bottom hierarchy of the magnetic random access memory; constructing a mixed heavy metal layer; constructing a residual tunneling magnetic tunnel junction film layer structure; and constructing and processing the tunneling magnetic tunnel junction. The method comprises the steps of constructing a mixed heavy metal layer on the upper surface of a bottom substrate structure, sputtering the upper surfaces of metal layers made of different materials to generate a complete magnetic tunnel junction, and leading current to the heavy metal layer, wherein the heavy metal layer realizes multi-mode turning action when the current is led in by utilizing the properties of different spinning Hall angle angles and different sizes of the different materials. The magnetic random access memory has good storage performance, and can realize logic storage integration of the computer, thereby realizing the improvement of the operation speed of the computer.)

1. A method for manufacturing a magnetic random access memory, the method comprising:

s1: building a bottom hierarchy of the magnetic random access memory;

s2: constructing a mixed heavy metal layer;

s3: constructing a tunneling magnetic tunnel junction film layer structure;

s4: and constructing and processing the tunneling magnetic tunnel junction.

2. The method of claim 1, wherein the method is applied to SOT-MRAM cells having Via-type connection structures and contact-type connection structures as heavy metal layers.

3. The method of claim 1, wherein the hybrid heavy metal layer structure is a unified layer of at least two materials capable of generating a spin current structure.

4. The method of claim 1 or 3, wherein the hybrid heavy metal layer material category selection comprises: heavy metal simple substance, heavy metal oxide, heavy metal nitride, alloy, antiferromagnetic magnetic material, crystal film, polycrystalline film, amorphous film, peril semimetal and two-dimensional electron gas.

5. The method of claim 1 or 3, wherein the hybrid heavy metal layer is formed of materials selected to maintain spin hall angles of opposite directions, the spin hall angles having different absolute values.

6. The method of claim 1, wherein the step of constructing the hybrid heavy-metal layer comprises the steps of:

g1: constructing a first partial heavy metal layer on the upper surface of the bottom layer structure;

g2: removing the redundant first part of the heavy metal layer on the upper surface of the bottom layer structure, and reserving a subsequent heavy metal layer area to be constructed;

g3; constructing a subsequent partial heavy metal layer on the upper surface of the bottom layer structure;

g4: and removing the upper surface of each metal layer without relevant construction waste.

7. The method as claimed in claim 1 or 6, wherein in the step of constructing the hybrid heavy metal layer, the heavy metal layer is constructed by sputtering.

8. The method as claimed in claim 1 or 6, wherein in the step of constructing the hybrid heavy metal layer, the removing of the excess heavy metal layer and the removing of the upper surface of each metal layer without related construction waste can be performed by etching.

9. The method as claimed in claim 1 or 6, wherein in the step of constructing the hybrid metal layer, when the number of the heavy metal layer regions to be constructed is greater than or equal to 2, the steps of G2, G3 and G4 are executed in a circulating manner until the construction of the hybrid metal layer is completed.

10. A magnetic random access memory, comprising: a magnetic tunnel junction with a mixed heavy metal layer; wherein the content of the first and second substances,

the hybrid heavy metal layer comprises at least two heavy metal materials with opposite spin Hall angles and different absolute values.

11. The mram of claim 10, wherein the hybrid heavy metal layer material is selected to include at least two spin current structure generating materials.

12. The magnetic random access memory of claim 10 wherein the magnetic random access memory tunneling magnetic tunnel junction structure is a top pinned structure.

13. A multi-state control method for a magnetic random access memory, wherein the method is applied to the magnetic random access memory according to any one of claims 10 to 12, and comprises the following steps:

respectively introducing a current into bottom electrodes of magnetic tunnel junctions of the magnetic random access memory, wherein the spin Hall angle directions and absolute values of various heavy metal materials of a mixed heavy metal layer in the magnetic tunnel junctions are different, so that the mixed heavy metal layer forms a plurality of different direction groups;

the plurality of different direction groups cause the magnetic tunnel junction to form a plurality of different resistance states;

and respectively identifying the plurality of different resistance states, and respectively representing different binary data by the different resistance states for storage and/or reading.

Technical Field

The invention relates to the field of magnetic electronic devices, in particular to a preparation method of a magnetic random access memory.

Background

With the continuous update and upgrade of the software and hardware performance of electronic equipment, the market puts higher requirements on the running speed and the storage speed of a computer. In a traditional von neumann computer architecture, a processor and a memory are two independent devices, the computing speed of the processor in the prior art is much faster than the reading and writing speed of the memory, and information in the memory needs to be continuously transmitted between the processor and the memory for computing, so that the computing speed of the computer is greatly limited, namely the problem of a 'storage wall' in a general sense.

To solve the above problem, a system structure for increasing the operation speed of a computer is disclosed at the present stage, as shown in fig. 1, the system structure includes: a root component 201, and three chips 202, 203, 204 and a converter 205, wherein: two PCIe (peripheral component interconnect express) interfaces are arranged on the chips of the at least two chips, the at least two chips are connected with the converter through the PCIe interfaces, and the chips or the converter of the at least two chips are connected with the following component. The embodiment realizes the increase of the computing capacity and the improvement of the computing speed through at least two chips. Since the technology still adopts the mode of logic storage split, the problem of the storage wall is not solved fundamentally, and therefore, in future applications, the technology still falls into a bottleneck state along with the further improvement of the demand of calculation, namely the running speed.

Currently, with the continuous maturity of the technology for developing and manufacturing Magnetic memories, Magnetic Random Access Memories (MRAMs), including Spin-orbit torque-Magnetic Random Access memories (SOT-MRAM), have become the most potential memories for replacing embedded flash memories due to their advantages of high storage density, low energy consumption, non-volatility of information, and the like. And the memory based on the magnetic material has the characteristics of electric controllability and natural information non-volatility, and is an ideal system for realizing logic storage integration.

Therefore, spin logic devices based on magnetic materials and spin electronics technology are further developed and utilized, the problem of a computer memory wall is fundamentally solved, and logic memory integration is realized, so that the improvement of the running speed of the computer is very important.

Disclosure of Invention

The embodiment of the invention provides a preparation method of a magnetic random access memory, which can accurately and stably realize logic operation and multi-mode storage of data.

In order to solve the above problems, a first aspect of the present invention provides a method for manufacturing a magnetic random access memory, including the steps of:

s1: building a bottom hierarchy of the magnetic random access memory;

s2: constructing a mixed heavy metal layer;

s3: constructing a tunneling magnetic tunnel junction film layer structure;

s4: and constructing and processing the tunneling magnetic tunnel junction.

In some embodiments, the method for fabricating the magnetic random access memory can be used for SOT-MRAM cells in which the heavy metal layer is a Via (interconnect Via) connection structure and a contact connection structure.

In some embodiments, the structure of the hybrid heavy metal layer is a layer provided with at least two materials capable of generating a spin current structure.

In some embodiments, the hybrid heavy metal layer material category selection comprises: heavy metal simple substance, heavy metal oxide, heavy metal nitride, alloy, antiferromagnetic magnetic material, crystal film, polycrystalline film, amorphous film, peril semimetal and two-dimensional electron gas.

In some embodiments, the materials of the hybrid heavy metal layer are selected to maintain the spin hall angles of the materials opposite to each other, and the absolute values of the spin hall angles are different.

In some embodiments, the method of constructing a hybrid heavy metal layer comprises the steps of:

g1: constructing a first partial heavy metal layer on the upper surface of the bottom layer structure;

g2: removing the redundant first part of the heavy metal layer on the upper surface of the bottom layer structure, and reserving a subsequent heavy metal layer area to be constructed;

g3: constructing a subsequent partial heavy metal layer on the upper surface of the bottom layer structure;

g4: and removing the upper surface of each metal layer without relevant construction waste.

In some embodiments, in the method for constructing the hybrid heavy metal layer, the metal layer construction can be performed by sputtering.

In some embodiments, in the method for constructing a hybrid heavy metal layer, the removing the excess metal layer and the removing the upper surface of the metal layer without related construction waste may be performed by etching.

In some embodiments, the step of constructing the remaining MTJ (Magnetic Tunnel Junction) structure above the heavy metal layer is performed by sputtering.

In some embodiments, the processing of the MTJ film layer structure into the MTJ tunnel junction process may include: gluing, developing and etching.

In some embodiments, the number of the heavy metal layer areas to be constructed is greater than or equal to 2, and the steps of G2, G3 and G4 are executed in a circulating manner until the construction of the mixed metal layer is completed.

The second aspect of the present application also provides a magnetic random access memory, characterized in that the magnetic random access memory includes: a magnetic tunnel junction with a mixed heavy metal layer; wherein the content of the first and second substances,

the hybrid heavy metal layer comprises at least two heavy metal materials with opposite spin Hall angles and different absolute values.

In some embodiments, the hybrid heavy metal layer material is selected to include at least two materials that can create a spin-current structure.

In some embodiments, the magnetic random access memory tunneling magnetic tunnel junction structure is a top pinned structure.

In a third aspect of the present application, there is provided a multi-state control method for a magnetic random access memory, where the method is applied to the magnetic random access memory, and includes:

respectively introducing currents in different directions and/or different magnitudes into bottom electrodes of magnetic tunnel junctions of the magnetic random access memory, so that spin Hall angle directions of various heavy metal materials of a mixed heavy metal layer in the magnetic tunnel junctions form a plurality of different direction groups;

the plurality of different direction groups cause the magnetic tunnel junction to form a plurality of different resistance states;

and respectively identifying the plurality of different resistance states, and respectively representing different binary data by the different resistance states for storage and/or reading.

The embodiment of the invention provides a preparation method of a magnetic random access memory capable of logical operation, which comprises the steps of constructing a mixed heavy metal layer on the upper surface of a bottom substrate structure, sputtering the upper surfaces of metal layers made of different materials to generate a complete magnetic tunnel junction, and leading current into the heavy metal layer to realize multi-mode turning action when the current is led into the heavy metal layer by utilizing the properties of different spin Hall angle directions and absolute values of the different materials. The magnetic random access memory has good storage performance, and can realize logic storage integration of the computer, thereby realizing the improvement of the operation speed of the computer.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application.

FIG. 1 is a schematic diagram of a prior art system according to the present invention;

FIG. 2 is a schematic diagram of a tunneling magnetic tunnel junction structure according to an embodiment of the present invention;

FIG. 3-a is a schematic diagram of a VIa-connected SOT-MRAM architecture cell for a heavy metal layer according to an embodiment of the present invention;

FIG. 3-b is a schematic diagram of a heavy metal layer contact-connected SOT-MRAM structure cell according to an embodiment of the invention;

FIG. 4 is a schematic diagram of a hybrid heavy metal layer current input waveform and modal output according to an embodiment of the invention;

FIG. 5 is a flow chart illustrating a process for fabricating a magnetic random access memory capable of logical operations according to an embodiment of the present invention;

FIG. 6 is a schematic diagram of the process for constructing the hybrid heavy-metal layer according to an embodiment of the invention;

FIG. 7 is a schematic diagram of a substrate layer structure of a magnetic random access memory according to an embodiment of the invention;

FIG. 8 is a schematic diagram illustrating a variation of the structure of the hybrid heavy-metal layer construction process product according to an embodiment of the invention;

FIG. 9-a is a product structure schematic diagram in the film layer growing process after the tunneling magnetic tunnel junction metal layer is constructed according to an embodiment of the invention;

FIG. 9-b is a schematic diagram of a tunneling magnetic tunnel junction completed product structure according to an embodiment of the present invention.

Detailed Description

In order to make the objects, features and advantages of the present invention more apparent and understandable, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

It will be understood by those within the art that the terms "first", "second", etc. in this application are used only to distinguish one device, module, parameter, etc., from another, and do not denote any particular technical meaning or necessary order therebetween.

As shown in FIG. 2, the SOT-MRAM core structure, i.e. tunneling magnetic tunnel junction structure, is divided from bottom to top, and mainly includes: substrate layer (substrate), heavy metal layer, free layer, nonmagnetic layer, fixed layer, antiferromagnetically coupled layer, pinning layer and covering layer. Wherein the heavy metal layer generates a spin hall effect. Spin (Spin) is an inherent angular momentum of electrons, the Spin hall effect refers to that under the condition of no external magnetic field, an electric field is introduced, a non-polarized current is injected, electrons which Spin upwards and Spin downwards move in opposite directions, however, the number of charges which move upwards and downwards is equal, and therefore, no net current flows, the main cause of the Spin hall effect is based on the Spin Orbit Coupling (SOC) of electrons in a material, namely, the interaction result of the Spin angular momentum and the Orbit angular momentum of the electrons, and therefore, the strength of the Spin hall effect result degree has a strong correlation with the selection of a used sample material. In the application of SOT-MRAM field, SOT-MRAM passes an in-plane current in the heavy metal layer, and utilizes the interaction between electron spin and orbit to generate unbalanced spin accumulation, so as to form spin current perpendicular to the current direction. The spin-polarized current entering the free layer rapidly interacts with the local magnetic moment to generate a spin-orbit torque (or a field) that induces a magnetic moment to flip if a critical current is reached. SOT-MRAM is capable of producing strong Spin-orbit coupling due to the Spin-orbit torque effect of heavy metal layers, the Spin source often having a certain Spin-to-charge conversion efficiency, i.e., Spin Hall Angle (SHA).

In one embodiment of the present application, in order to implement the logical operation function of the magnetic memory, the hybrid heavy metal layer is constructed based on the principle that the spin hall angles of different heavy metal layer materials are different, and the spin hall angles are selected to be opposite and absoluteFor two materials of different values. 3-a and 3-b, wherein W (tungsten) and Pt (platinum) are taken as examples, the spin Hall angle of W and the spin Hall angle of Pt are opposite in direction, the spin Hall angle of W is negative, the spin Hall angle of Pt is positive, and the absolute value of the spin Hall angle of W is greater than the absolute value of the spin Hall angle of Pt in a numerical relation, i.e. | theta_W|＞|θ_PtThe relationship between the magnitude of the write current is: i is_W＜I_PtTherefore, when the same magnitude of current is introduced, the tunnel turning junctions of the two corresponding metal tunnels have logical non-relations and sequential relations in time sequence, the description of the logical state can be realized according to the requirements, and the method has the logical operation capability.

In one embodiment of the present application, to implement the logic state operation on the hybrid heavy metal layer, as shown in fig. 4, a representation logic of the tunneling magnetic tunnel junction switching state is provided. And (3) introducing current into the bottom electrode of the magnetic tunnel junction, wherein the current passes through the heavy metal layers, and different influences are generated on the resistance state of the MTJ junction on the upper layer due to the fact that the spin Hall angles of the two heavy metal layers are opposite and different in size. Taking the heavy metal layer materials as W and P as examples, when a positive current is introduced to the bottom electrode, the absolute value of the spin Hall angle of W is larger than that of Pt due to the opposite spin Hall angles of W and Pt, namely, | [ theta ] (theta) ]_W|＞|θ_PtThe relationship between the magnitude of the write current is: i is_W＜I_Pt. The SOT-MRAM state after the current is applied is represented as (01), and as the forward current increases, the magnitude relation of the write current of W and Pt is as follows: i is_W＜I_PtTherefore, W first achieves the inversion during the current increase, and the SOT-MRAM state after the inversion is represented as (11). When negative current is applied at the bottom-point, the SOT-MRAM state after current application appears as (10) because the spin Hall angles of W and Pt are opposite, and as the negative current increases, the write current magnitude relationship between W and Pt is: i is_W＜I_PtTherefore, W first achieves the inversion during the current increase, and the SOT-MRAM state after the inversion is represented as (00). Therefore, the multi-state logic operation and expression of the SOT-MRAM are realized.

In one embodiment of the present application, a method for manufacturing a magnetic random access memory capable of logical operation is provided, as shown in fig. 5, including the steps of:

s1: a bottom level structure of the magnetic random access memory is constructed.

As shown in fig. 7, a Complementary Metal Oxide Semiconductor (CMOS) integrated wafer of a conventional back end of line (BEOL) is used as the substrate. The substrate slice is also called wafer (wafer substrate), the process means of wafer processing at the present stage is mature, the method can be directly used for the manufactured product or can be independently prepared according to special requirements, and the common wafer manufacturing process flow of the 200mm CMOS comprises the following steps:

1) pulling a single crystal, 2) slicing, 3) lapping, 4) polishing, 5) adding layers, 6) photoetching, 7) doping, 8) heat treatment, 9) probing and 10) scribing.

S2: a hybrid heavy metal layer is constructed.

The heavy metal layer can be constructed by adopting a sputtering process. The sputtering process is a process of bombarding the surface of a solid with particles (particles or neutral atoms, molecules) with certain energy to make the atoms or molecules near the surface of the solid obtain enough energy to finally escape from the surface of the solid, and the sputtering process can be performed only under a certain vacuum state, and the growth of the mixed heavy metal layer constitutes a preferred sputtering process, but is not limited to this scheme, and other modes are also applicable.

Optionally, the sputtering process for growing and constructing the hybrid heavy metal layer includes, but is not limited to, two-stage sputtering, three-stage sputtering or four-stage sputtering, magnetron sputtering, target sputtering, radio frequency sputtering, bias sputtering, asymmetric alternating current radio frequency sputtering, ion beam sputtering, reactive sputtering, and the like.

Optionally, the mixed heavy metal layer growth building material is selected from at least one of the following materials: heavy metals such as Ta (tantalum), W, Pt, Pd (lead), Hf (hafnium), Au (gold), and nonmagnetic metals represented by Ti (titanium);

optionally, the mixed heavy metal layer growth building material may also be selected from WO or WN; and the multilayer structure of WO/WN thereof, the thickness of which is limited to 1-10 nm;

optionally, the mixed heavy metal layer growth building material may also be selected as an alloy of materials of the above metals in different atomic ratios, including but not limited to: au coating_0.93W_0.07、Au_0.9Ta_0.1、Au_xPt_100-xThe thickness is generally 1-10 nm;

optionally, the hybrid heavy metal layer growth building material may also be selected from antiferromagnetic magnetic materials, including but not limited to: IrMn, PtMn, FeMn, PdMn, L1₀-IrMn、poly-IrMn；

Optionally, the mixed heavy metal layer growth building material may also be selected from a crystalline thin film, a polycrystalline thin film or an amorphous thin film, including but not limited to: bi₂Se₃、Bi₂Te₃、Sb₂Te₃、(Bi_xSb_1-x)₂Te₃Or Bi_xSe_1-x；

Optionally, the mixed heavy metal layer growth building material may also be selected from the group consisting of exotic semimetals, including but not limited to WTe₂、MoTe₂Or Mo_xW_1-xTe₂；

Alternatively, the hybrid heavy metal layer growth building material may be selected to be any structure that can generate spin current, including but not limited to a two-dimensional electron gas.

S3: and constructing a tunneling magnetic tunnel junction film layer structure.

The tunneling magnetic tunnel junction film layer structure can be constructed by adopting a sputtering process, and the construction effect is shown as figure 9-a.

Optionally, the sputtering process constructed by the growth of the tunneling magnetic tunnel junction film layer includes, but is not limited to, two-stage sputtering, three-stage sputtering or four-stage sputtering, magnetron sputtering, target sputtering, radio frequency sputtering, bias sputtering, asymmetric alternating current radio frequency sputtering, ion beam sputtering, reactive sputtering, and the like.

S4: and constructing and processing the tunneling magnetic tunnel junction.

And after the tunneling magnetic tunnel junction film layer structure grows completely, processing the tunneling magnetic tunnel junction structure, wherein the processing effect is shown as figure 9-b. Common processing steps include: gluing, developing and etching.

The SOT-MRAM structure unit metal layer can be divided into Via type connection and contact type connection according to the connection type of the heavy metal layer, and the typical structure can be seen as an example of the structure in FIGS. 3-a and 3-b. The technical scheme of the embodiment of the application is that the hybrid heavy metal layer is constructed on the surface of the bottom substrate, the split description of the logic state is realized by using the difference of the spin Hall angle and the direction between different materials, the addition of the SOT-MRAM logic operation function is realized, the overall structure of the SOT-MRAM is not changed in the process, and the SOT-MRAM unit with the multi-modal structure has compatibility.

In a preferred embodiment of the present application, taking the SOT-MRAM structure with heavy metal layer Via type connection as an example, the bottom substrate structure is a Via type connection, and the hybrid heavy metal layer construction process is shown in fig. 6 and includes the following steps:

g1: constructing a first partial heavy metal layer on the upper surface of the bottom layer structure;

wherein, the construction means can adopt sputtering growth means. The hybrid heavy metal layer growth described herein constitutes a preferred sputtering process, but is not limited to this scheme, and other modes are equally applicable.

Optionally, the sputtering process for growing and constructing the hybrid heavy metal layer includes, but is not limited to, two-stage sputtering, three-stage sputtering or four-stage sputtering, magnetron sputtering, target sputtering, radio frequency sputtering, bias sputtering, asymmetric alternating current radio frequency sputtering, ion beam sputtering, reactive sputtering, and the like.

G2: and removing the redundant first part of the heavy metal layer on the upper surface of the bottom layer structure, and reserving a subsequent heavy metal layer area to be constructed.

The conventional understanding of constructing the mixed heavy metal layer can be that 1) sputtering is carried out on a designated area, and 2) a complete area is sputtered for the first time and then is removed, and a second sputtering area is reserved. The first idea is higher in sputtering precision requirement and higher in operation difficulty. In general, to ensure the sputtering region is complete, the actual sputtering growth process has a larger sputtering effect range than the target region, so the second construction concept is more preferable here.

Optionally, the removing the redundant first partial heavy metal layer includes: gluing, developing, etching and other technological operations.

G3: and constructing a subsequent part of heavy metal layer on the upper surface of the bottom layer structure.

Wherein, the construction means can adopt sputtering growth means. The hybrid heavy metal layer growth described herein constitutes a preferred sputtering process, but is not limited to this scheme, and other modes are equally applicable.

Optionally, the sputtering process for growing and constructing the hybrid heavy metal layer includes, but is not limited to, two-stage sputtering, three-stage sputtering or four-stage sputtering, magnetron sputtering, target sputtering, radio frequency sputtering, bias sputtering, asymmetric alternating current radio frequency sputtering, ion beam sputtering, reactive sputtering, and the like.

G4: and removing the upper surface of each metal layer without relevant construction waste.

After the sputtering growth of the subsequent heavy metal layer is completed, a phenomenon of covering the upper surface structure of the product with waste materials occurs, which is specifically represented as a product state shown in step G3 in fig. 8. The top surface of the product in this state still represents the unmixed heavy metal layer, and the extraneous scrap on the top surface needs to be treated, and the treated state is the product state shown in step G4 in fig. 8.

Optionally, the removing the redundant first partial heavy metal layer includes: gluing, developing, etching and other technological operations.

The product state change corresponding to each step of the hybrid heavy-metal layer construction flow is shown in fig. 8. As can be seen from the figure, the fabrication process achieves the construction of the hybrid metal layer, building a new class of material region within the original heavy metal layer region. No significant effect is caused on the stacking state of the products. Therefore, on the premise that the storage performance of the original SOT-MRAM is not influenced by the negative direction, the hybrid heavy metal layer structure is provided, and logic storage integration is achieved.

Optionally, in the method for constructing the hybrid heavy metal layer, the metal layer may be constructed by sputtering.

Optionally, in the method for constructing a hybrid metal layer, the removing the excess metal layer and the removing the upper surface of the metal layer without related construction waste may be performed by etching.

The embodiment of the invention provides a preparation method of a magnetic random access memory capable of logical operation, which comprises the steps of constructing a mixed heavy metal layer on the upper surface of a bottom substrate structure, sputtering the upper surfaces of metal layers made of different materials to generate a complete magnetic tunnel junction, and leading current into the heavy metal layer to realize multi-mode turning action of the heavy metal layer when the current is led by utilizing the properties of different spin Hall angles and different sizes of the different materials. The magnetic random access memory has good storage performance, and can realize logic storage integration of the computer, thereby realizing the improvement of the operation speed of the computer.

The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, and any modifications, equivalents, improvements, etc. that are within the spirit and principle of the present invention should be included in the present invention.