阅读说明：本技术 用于检测诸如冲击、加速度、旋转力等平面内的力的集成压电传感器 (Integrated piezoelectric sensor for detecting in-plane forces such as shock, acceleration, rotational force, and the like ) 是由 F·普罗科皮奥 C·瓦尔扎辛 于 2015-11-26 设计创作，主要内容包括：压电传感器(10)形成在半导体材料芯片中,该半导体材料芯片具有限定平面(XY)的表面(13A)并且集成有用于感测在平面内作用的力的感测结构(11；30；60)。芯片由限定悬臂(12；32；52；62)的衬底(13；33)形成,该悬臂(12；32；52；62)具有被约束到衬底的锚固部(15)的第一端(12A)和在外力的作用下自由弯曲的第二端(12B)。悬臂具有第一和第二纵向半部,每个纵向半部承载平行于芯片平面延伸的压电材料的相应的条状元件(16,17)。(The piezoelectric sensor (10) is formed in a chip of semiconductor material having a surface (13A) defining a plane (XY) and integrated with a sensing structure (11; 30; 60) for sensing forces acting in the plane. The chip is formed by a substrate (13; 33) defining a cantilever (12; 32; 52; 62), the cantilever (12; 32; 52; 62) having a first end (12A) constrained to an anchor (15) of the substrate and a second end (12B) free to bend under the action of an external force. The cantilever has first and second longitudinal halves, each carrying a respective strip-like element (16, 17) of piezoelectric material extending parallel to the plane of the chip.)

1. A method of manufacturing a piezoelectric sensor, comprising:

forming first and second strips along a longitudinal direction of a substrate, each of the first and second strips having a piezoelectric layer between respective first and second electrode layers;

electrically coupling the first electrode layer of the first strip to the second electrode layer of the second strip;

electrically coupling the second electrode layer of the first strip to the first electrode layer of the second strip; and

forming a cantilever extending in the longitudinal direction from the substrate by etching the substrate, the cantilever comprising the first strip and the second strip.

2. The method of claim 1, further comprising:

securing a first cover to a first surface of the substrate; and

a second cover is secured to the second surface of the substrate.

3. The method of claim 1, further comprising:

forming a passivation layer on the first and second stripes and the substrate;

exposing at least a portion of the first and second electrode layers of the first and second stripes by selectively removing a portion of the passivation layer;

forming electrical contacts by depositing metallization layers in the exposed portions of the first and second electrode layers of the first and second strips.

4. A system, comprising:

a piezoelectric sensor, the piezoelectric sensor comprising:

a semiconductor substrate;

an anchor portion;

a cantilever formed in the substrate, the cantilever having a first end and a second end, the first end being constrained to the anchor portion; and

a first strip-like element of piezoelectric material on the cantilever, the first strip-like element having a first portion and a second portion, the second portion aligned with and spaced apart from the first portion between the first end and the second end.

5. The system of claim 4, further comprising:

a measurement circuit electrically coupled to the piezoelectric sensor and configured to determine a value of an external force acting on the cantilever.

6. The system of claim 4, wherein the piezoelectric sensor comprises a second strip-like element of piezoelectric material on the cantilever, the second strip-like element being positioned laterally with respect to the first strip-like element.

Technical Field

The present invention relates to an integrated piezoelectric sensor for detecting forces in-plane, such as impacts, accelerations, uniaxial and acceleration, and rotational forces. In particular, the invention concerns sensors obtained using semiconductor technology, generally using the techniques used for the manufacture of MEMS devices, for detecting forces acting in the plane of the sensor.

Background

As is known, when piezoelectric materials are subjected to physical stress and undergo deformation, they are biased, generating a potential difference across them and an electrical charge. By connecting these materials to an external circuit, a piezoelectric current is obtained which is related to the applied force.

The above phenomena have been studied for several years and employed in order to provide sensors in which the sensing structure (typically a cantilever beam or cantilever arm having at least one piezoelectric region) undergoes deformation upon mechanical stress and generates an electrical current. By connecting the sensing circuit to measurement circuitry (such as an ammeter and processing stage), the measurement circuitry can detect the charge or potential difference and determine the force acting on the cantilever.

In this way, the piezoelectric sensor is able to measure forces such as linear and rotational forces, e.g. acceleration, shock, etc.

The geometrical dimensions, the properties of the material and generally the overall design of the sensing structure of the sensor are generally optimized according to the physical quantity to be detected.

For example, for an impact sensor, it is possible to use a sensing structure 1 as shown in fig. 1. Here, the piezoelectric sensor 1 comprises a cantilever 2 carrying a piezoelectric layer 3, for example a PET (lead zirconate titanate) crystal. The cantilever 2 is constrained in 7 and has a free end 8. In case of an external force 4 acting on the cantilever 2, these cause a curling of the cantilever 2 and a bending up or down, as indicated by arrow 5. This bending causes a deformation of the free end 8 of the cantilever 2 and the generation of a stress that can be detected via a suitable measuring circuit.

The piezoelectric sensor 1 of fig. 1 is suitable for detecting deformation due to a force or stress acting in a direction perpendicular to the plane in which the cantilever 2 is placed (so-called "out-of-plane direction"). Thus, in the example shown, in which the cantilever 2 extends to a first approximation in the plane XY, the piezoelectric sensor 1 is able to detect a force or stress that causes a movement of the free end of the cantilever 2 in the direction Z.

However, the piezoelectric sensor 1 is not able to detect the action of forces or stresses acting in the plane XY. To detect these forces, the piezoelectric sensor 1 is rotated by 90 ° in such a way that the cantilever 2 can extend parallel to a plane passing through the axis Z.

However, this causes a significant complication in the production of the sensing structure, since the manufacturing and assembly is complicated and requires higher costs, the overall dimensions of the sensing structure are larger, and the sensing structure has a lower accuracy than the in-plane sensing structure.

Other known solutions envisage embedding in the structure of the cantilever a layer of piezoelectric material extending according to a lying plane transverse to the plane XY (for example at 45 ° with respect to the sensor plane). However, these solutions are particularly complex from a manufacturing point of view and are therefore expensive. They are therefore not capable of being used in all low cost applications.

Disclosure of Invention

It is an object of the present invention to provide a sensor that overcomes the drawbacks of the prior art.

According to the present invention, a force sensor of the piezoelectric type is provided, as defined in claim 1.

Drawings

For a better understanding of the present invention, preferred embodiments thereof will now be described, by way of non-limiting example only, with reference to the accompanying drawings, in which:

FIG. 1 is a perspective view of a piezoelectric force sensing structure of known type;

FIG. 2 is a perspective view of an embodiment of a force sensing structure for use in an in-plane force sensor;

FIG. 3 shows an equivalent electrical diagram of a force sensor including the sensing structure of FIG. 2;

FIG. 4 is a perspective view of a different embodiment of the sensing structure of the present force sensor;

FIG. 5 is a perspective view of a deformation of the structure of FIG. 4 in the presence of an external force;

FIG. 6 is a schematic illustration of a different embodiment of the present pressure sensor for detecting both linear and rotational forces;

FIGS. 7A and 7B are schematic illustrations of the behavior of the force sensor of FIG. 6 in the presence of an external linear force and an external rotational force, respectively; and

FIGS. 8A-8E are cross-sectional views of the sensing structure of FIGS. 2, 4 and 6 in successive fabrication steps.

Detailed Description

Fig. 2 and 3 show an embodiment of a sensing structure 11 of a force sensor 10 for detecting forces or stresses oriented in the planar direction of the structure.

The sensing structure 11 is formed in a substrate 13 forming a chip, as shown more clearly in fig. 8A-8E. Substrate 13 is made of a material commonly used in the semiconductor industry; it may be, for example, a silicon or SOI substrate. The substrate 13 has a main surface 13A defining a plane XY forming the sensitivity plane of the force sensor 10.

The substrate 13 monolithically forms a beam 12 of the cantilever type, the beam 12 of the cantilever type having a main extension direction (longitudinal direction) parallel to the axis Y, a first end (constrained end) 12A fixed to an anchoring region 15 of the substrate 13, and a second end (free end) 12B. The cantilever 12 may have a thickness in the direction Z smaller than the substrate 13, for example negligible with respect to the other two dimensions, however this is not mandatory, as discussed below.

A longitudinal plane parallel to the axis YZ and passing through the midline of the cantilever 12 defines two longitudinal halves of the cantilever 12.

The substrate 13 may integrate other structural and electronic components (not shown).

The two strips 16, 17 extend above the cantilever 12, longitudinally with respect to the cantilever 12, substantially throughout the length of the cantilever 12, adjacent to each other, parallel and preferably equally to have the same piezoelectric properties. Each strip 16, 17 has a width less than half the width of the cantilever 12 and extends along a respective longitudinal half of the cantilever 12. Each strip 16, 17 comprises a piezoelectric region 24 of piezoelectric material, such as PZT (lead zirconate titanate), top and bottom electrodes 22, 23, both of metal.

The two strips 16 and 17 are connected in an opposing manner, as schematically shown in fig. 2 by an electrical connection 25, the electrical connection 25 typically being formed by a metal connection on the surface of the substrate 13 (see also fig. 8A-8E).

In detail, as shown in fig. 3, where each strip 16, 17 is represented by a capacitor denoted with the same reference numeral, the top electrode 22 of the first strip 16 is connected to the first reading node 20 and the bottom electrode 23 of the first strip is connected to the second reading node 21. In addition, the top electrode 22 of the second stripe 17 is connected to the second read node 21, and the bottom electrode 23 of the second stripe 17 is directly connected to the first read node 20.

The reading nodes 20, 21 are in turn connected to a measurement circuit 26, which measurement circuit 26 may be integrated in the same substrate 13 or in a suitably arranged ASIC (not shown).

In the illustrated embodiment, the free end 12b of the cantilever 12 has an extension 18, and the extension 18 achieves a reduction in the resonant frequency of the detection system by increasing the weight of the cantilever 12.

In use, in the presence of an external force acting in-plane on cantilever 12, cantilever 12 bends in the same plane XY. In the plane of the drawing of fig. 2, in practice, the free end 12b of the cantilever 12 moves to the left and right depending on the direction of the external force to cause compression on one side of the cantilever 12 and extension on the other. For example, force F directed to the left in FIG. 2 causes compression of the first strip 16 and the left side of cantilever 12 and expansion of the second strip 17 and the right side of cantilever 12. Conversely, a force in the opposite direction may cause compression of the second strip 17 and the right side of cantilever 12 and extension of the first strip 16 and the left side of cantilever 12.

The two strips 16 and 17 thus undergo separate and different (opposite) deformations. They thus generate equal and opposite electric fields E_Z(see FIG. 3), electric field E_ZMay be detected individually or in combination to increase its effectiveness.

In particular, by connecting the two strips 16 and 17 as described, the voltage between the electrodes 22, 23 of the respective strips 16, 17, increased by opposite values, varies, and a charge Q appears between the bias and read nodes 20, 21, given by the following equation (the first two are specific for piezoelectric materials, the third is gaussian law):

wherein sigma_PZTIs the stress on the strips 16, 17 related to the force F, the value of which can be obtained analytically for simple geometries or can be easily obtained using FEM software, E_PZTIs the Young's modulus, ε, of the piezoelectric material_PZTIs the deformation of the material to be treated,eis the piezoelectric constant (C/m)²)，E_zIs the electric field generated, D_indIs an electric displacement field, epsilon_elIs the piezoelectric permittivity (. epsilon.)_el＝ε₀ε_r) A is its area, and Q is the charge generated thereon. Thus, using equation (1), it is possible to determine the value of the external force acting on the cantilever 12 in a known manner.

It should be noted that the sensing structure 30 is capable of detecting forces acting in a planar direction (here the X direction) perpendicular to the direction of the cantilever 12, and is insensitive to forces oriented in the perpendicular directions Y and Z. In order to detect forces oriented in both the X and Y directions in a plane, it is therefore sufficient to use two sensors with respective cantilevers oriented perpendicular to each other.

Fig. 4 shows an embodiment of the sensing structure 30 featuring a high sensitivity.

The force sensor of fig. 4 comprises a plurality of cantilevers 32 parallel to each other, and fig. 4 shows two cantilevers 32 equal to each other. Similar to fig. 2, each cantilever 32 has a first end 32A anchored to a fixed anchor region of the substrate 33 and a second end 32B. The second ends 32B of the cantilever arms 32 are connected together by a transverse portion 34, the transverse portion 34 extending in a direction transverse (perpendicular) to the cantilever arms 32 and being fixed to the cantilever arms 32 such that all of the second ends 32B are precisely deflected in the same manner.

Each cantilever 32 carries two pairs of strips 35, each pair of strips 35 comprising a first strip 36 and a second strip 37. Each strip 36, 37 is in turn formed as described in relation to fig. 2 and thus comprises, in a manner not shown in fig. 4, a piezoelectric region 24, a top electrode 22 and a bottom electrode 23.

In detail, in each cantilever 32, each pair of strips 35 extends for approximately half the length of the respective cantilever 32, so that each first strip 36 extends laterally (in a direction perpendicular to the cantilever 32) side by side to a respective second strip 37 of the same pair of strips 35 and longitudinally with a respective second strip 37 of a different pair of strips 35. The stripes 36 and 37 in each pair of stripes 35 are also connected together and to a pair of read nodes 40, 41, similar to that described with respect to fig. 2 and 3. In addition, a pair of strips 35 on the same cantilever 32 are connected together and in a mirror image fashion to the read nodes 40, 41. Thus, in the longitudinal direction, each cantilever 32 carries two strip elements, which are in turn formed by a first strip 36 and a second strip 37.

In particular, the first stripes 36 (in the illustrated example, the stripes 36 disposed proximate to the first end 32A of the respective stripe 32, on a first side of the respective cantilever 23, e.g., the left side in fig. 4, and the first stripes 36 disposed proximate to the second end 32B of the respective cantilever 32, on a second side of the cantilever, e.g., the right side in fig. 4) have a top electrode (not shown) connected to the first read node 40 and a bottom electrode (not shown) connected to the second read electrode 41. In contrast, the second stripe 37 has a top electrode (not shown) connected to the second read node 41 and a bottom electrode (not shown) connected to the first read electrode 40.

Thus, the arrangement of fig. 4 is equivalent to a circuit similar to fig. 3, in which eight capacitors are connected in an alternating manner.

With the arrangement of fig. 4, as shown in fig. 5, the cantilever 32 undergoes an S-like deformation because its second end 32B is no longer free, but is constrained by the transverse portion 34 to move in the same manner perpendicular to the longitudinal direction of the cantilever 32 (parallel to the X-direction).

With the structure of fig. 4, it is possible to obtain higher sensitivity with a greater number of cantilevers 32. The presence of the transverse portion 34 ensures a coordinated movement of the cantilevers and enables any possible asymmetric and inhomogeneous effects between the cantilevers 32 to be eliminated, which might otherwise cause mutually different resonance frequencies and thus might require more complex processing of the signals generated by the sensing structure. The presence of at least two pairs of strips 35 on each cantilever 32 (i.e. the presence of first and second strips 36, 37 of opposite type aligned in the longitudinal direction of each cantilever 32) enables the detection of the presence of deformations even if the average of the deformations along the cantilever 32 is zero.

Fig. 6 illustrates an embodiment that enables detection of both linear and rotational type forces.

In the sensing structure 60 of fig. 6, two pluralities of cantilevers 52, 62 (hereinafter also referred to as "first cantilever(s)" 52 and "second cantilever(s)" 62) are arranged symmetrically with respect to each other in a symmetry plane 61 perpendicular to the drawing plane (and thus perpendicular to the longitudinal direction Y of the cantilevers 52, 62). Each of the plurality of cantilevers 52, 62 may be formed as shown in fig. 4 and thus have pairs 35 of piezoelectric strips 36, 37. The first cantilever 52 is fixed at a first end thereof at the same first anchoring zone 53 and has a second end constrained to a first transverse portion 54. The second cantilever 62 is fixed at a first end thereof at a same second anchoring zone 63 and has a second end constrained to a second transverse portion 64. The transverse portions 54, 64 are arranged side by side and in parallel. The plurality of cantilevers 52, 62 and the transverse portions 54, 64 preferably have the same structure, in particular the same thickness, length and width, so that the sensing structure is completely symmetrical about the plane 61.

In use, as illustrated in fig. 7A, in the presence of a linear force F1 lying in the sensor plane (plane XY), the force acts in the same manner on both of the plurality of cantilevers 52, 62. Therefore, the first and second cantilever arms 52, 62 undergo deformation in the same direction, and the electrical signals generated by each of the plurality of cantilever arms 52, 62 are the same.

In contrast, as illustrated in fig. 7B, in the presence of the rotational force F2, this force acts on each of the plurality of cantilever arms 52, 62 in opposite directions. Thus, first and second suspension arms 52 and 62 undergo deformation in opposite directions and generate electrical signals of opposite signs.

The measurement circuitry downstream of the sensing structure of fig. 7 is thus able to detect the type of force acting on the sensor.

The sensing structure shown in fig. 2-7 can be fabricated as described below with reference to fig. 8A-8E, which fig. 8A-8E show a cross section of a chip of semiconductor material taken in the longitudinal direction of the cantilever 12, 32, 52 or 62.

Initially (fig. 8A), a bottom electrode layer 73 (e.g. formed of titanium platinum oxide), a piezoelectric layer 74 and a top electrode layer 75 (e.g. ruthenium layer) are arranged on a standard type substrate 70 covered with an insulating layer 72 (typically thermal silicon oxide), for example on a silicon substrate or an SOI (silicon on insulator) substrate.

Next (fig. 8B), a top electrode layer 75, a piezoelectric layer 74 and a bottom electrode layer 73 are defined in turn using photolithographic techniques for forming strips 16, 17, 36 and 37 comprising respective piezoelectric regions 24 and respective top and bottom electrodes 22 and 23.

Then (fig. 8C), a passivation layer 78, e.g. a silicon oxide layer, is deposited, the passivation layer 78 is selectively removed so as to locally expose the top and bottom electrodes 23, 22 and to open the via 79, a metallization layer, e.g. platinum, is deposited, and the metallization layer is defined to form contact structures 80 and electrical connection lines 25.

Next (fig. 8D), the substrate 70 is etched from the front and back in order to laterally release the cantilevers 12, 32, 52, 62 to form trenches 85 and (if envisaged) to remove portions of the substrate 70 at the bottom to thin the cantilevers 12, 32, 52, 62. However, thinning the cantilever 12, 32, 52, 62 is not necessary, as the characteristics of the sensor (sensitivity and resonant frequency) do not depend on the thickness of the sensing structure. In addition, the possibility of movement of the cantilever arms 12, 32, 52, 62 may be ensured by the shape of the bottom cover.

Finally (fig. 8E), the bottom cover 86 and the top cover 87 are fixed to the substrate 70 in a known manner.

The described force sensor has many advantages.

The reading based on the piezoelectric phenomenon involves low noise, and therefore the sensor has high sensitivity.

The sensor is configured according to a vertical layer structure of standard type and therefore the assembly is of standard type and does not incur additional costs like in the case of a sensor arranged rotated by 90 °.

Several manufacturing steps are required after the steps typically used to fabricate the piezoelectric structure.

The sensor has an extremely compact structure and therefore the overall size is reduced.

The sensitivity of the sensor is independent of the thickness of the cantilever, and therefore the sensor does not experience inaccuracies and process spread (process spread) due to thickness variations in the batch.

The sensors may detect different types of forces, such as shock, acceleration, linearity, and rotational forces as described above.

Finally, it is clear that modifications and variations can be made to the sensor described and illustrated herein without thereby departing from the scope of the present invention, as defined in the annexed claims. For instance, the different embodiments described may be combined to provide further solutions.

In addition, although the illustrated structure always has at least one pair of piezoelectric strips, each strip extending on a respective longitudinal half of each cantilever, it is possible to form a single strip on one longitudinal half of the respective cantilever, which is subjected to compression or tension depending on the deformation of the cantilever and whose output signal is therefore uniquely related to the magnitude and direction of the force acting on the sensing structure.

For example, the single cantilever solution of fig. 3 may also have pairs of strips 35, similar to fig. 4. In addition, each cantilever may have more than two pairs of strips 35 following each other in the length direction of the cantilever, if desired. In addition, each cantilever may have more than two strips arranged beside each other, preferably an even number.