阅读说明：本技术 一种掺镱硼酸锶钆钇混晶激光晶体及其制备方法和应用 (Ytterbium-doped strontium-gadolinium-yttrium borate mixed crystal laser crystal and preparation method and application thereof ) 是由 潘忠奔 唐开阳 张衍 戴晓军 蔡华强 于 2019-11-28 设计创作，主要内容包括：本发明公开了一种掺镱硼酸锶钆钇混晶激光晶体及其制备方法和应用,掺镱硼酸锶钆钇混晶激光晶体的分子式为Sr<Sub>3</Sub>Gd<Sub>x</Sub>Y<Sub>y</Sub>Yb<Sub>2-x-y</Sub>(BO<Sub>3</Sub>)<Sub>4</Sub>,其中x＝0～2,y＝0～2,Yb<Sup>3+</Sup>离子的掺杂浓度为5at.％至30at.％。实验结果表明所制备的Sr<Sub>3</Sub>Gd<Sub>x</Sub>Y<Sub>y</Sub>Yb<Sub>2-x-y</Sub>(BO<Sub>3</Sub>)<Sub>4</Sub>混晶性能介于Yb:Sr<Sub>3</Sub>Gd<Sub>2</Sub>(BO<Sub>3</Sub>)<Sub>4</Sub>和Yb:Sr<Sub>3</Sub>Y<Sub>2</Sub>(BO<Sub>3</Sub>)<Sub>4</Sub>晶体之间,具有较宽的发射光谱,采用锁模技术,有望获得超短脉冲激光输出。(The invention discloses a ytterbium-doped strontium borate gadolinium yttrium mixed crystal laser crystal and a preparation method and application thereof, wherein the molecular formula of the ytterbium-doped strontium borate gadolinium yttrium mixed crystal laser crystal is Sr 3 Gd x Y y Yb 2‑x‑y (BO 3 ) 4 Wherein x is 0-2, y is 0-2, Yb 3+ The doping concentration of the ions is 5 at.% to 30 at.%. The experimental result shows that the prepared Sr 3 Gd x Y y Yb 2‑x‑y (BO 3 ) 4 The mixed crystal property is between Yb and Sr 3 Gd 2 (BO 3 ) 4 And Yb: Sr 3 Y 2 (BO 3 ) 4 The crystals have wider emission spectrum, and the mode locking technology is adopted, so that ultrashort pulse laser output is hopeful to obtain.)

1. An ytterbium-doped strontium-gadolinium-yttrium borate laser crystal is characterized in that the laser crystal is Yb³⁺Ion-doped Sr₃(Gd,Y)(BO₃)₄The molecular formula of the crystal is Sr₃Gd_xY_yYb_2-x-y(BO₃)₄Wherein x is 0-2, y is 0-2, Yb³⁺The doping concentration of the ions is 5 at.% to 30 at.%.

2. The ytterbium-doped strontium borate gadolinium yttrium laser crystal of claim 1, wherein Gd and Y elements are doped by Yb³⁺And (4) substituting.

3. The preparation method of the ytterbium-doped strontium gadolinium yttrium borate laser crystal of claim 1 or 2, characterized in that the ytterbium-doped strontium gadolinium yttrium borate laser crystal is prepared by the following raw materials through solid phase reaction to obtain mixed crystal and then adopting a Czochralski method:

raw materials: gd of 99.99% purity₂O₃Yb of 99.99% purity₂O₃Y of 99.99% purity₂O₃Purity of 99.99% SrCO₃H with a purity of 99.99%₃BO₃；

Solid phase reaction chemical formula:

4. the method according to claim 3, wherein the solid phase reaction comprises the steps of: fully mixing the raw materials, carrying out solid-phase reaction for 20-24 h at the temperature of 800-1000 ℃, and then heating to 1000-1200 ℃ for reaction for 24-30 h to obtain the polycrystalline material.

5. The method according to claim 4, wherein the pulling method comprises the step of pulling a polycrystalline material at a pulling rate of 0.5 to 3 mm/hr and at a rotation speed of 4 to 11rpm in a pulling furnace.

6. Use of a ytterbium-doped strontium gadolinium yttrium borate laser crystal according to claim 1 or 2, characterized in that the crystal is used in a 1 μm solid mode-locked laser to generate ultrafast laser pulses.

Technical Field

The invention belongs to the field of laser crystal materials, and particularly relates to a preparation method and application of a laser crystal and application of the laser crystal in a solid laser.

Background

The mechanism of laser generation was proposed by einstein in 1917, and the first laser was introduced in 1960, after which the laser made a prominent contribution to the human understanding of the world and had a strong driving effect on optical technology. In addition, the plasma physics, solid physics and other disciplines are very strong.

After the advent of laser, higher laser energy output, shorter laser pulses, and higher laser peak power were sought. After the advent of the Q-switching technique, laser pulse output in the order of nanoseconds became possible. With the advent of mode-locking technology, picosecond and femtosecond-level laser pulse outputs were possible. The ultrafast laser has good application prospect in the fields of medicine, military, processing and the like because of meeting the advantages of high peak value, wide spectrum and narrow pulse width, so that the ultrafast pulse output is developed in laser research of a plurality of wave bands and becomes an important measurement index. In the 80 s, the development of bulk crystals enabled the solid-state laser to be developed rapidly, and the development of laser technology was further driven by the appearance of broad-spectrum laser crystals. The massive laser substrate has the advantages of high heat conductivity coefficient, excellent thermal stability, capability of continuously and stably working and the like, and has important application prospect on miniaturization, stabilization and high efficiency of all-solid-state lasers.

Disclosure of Invention

The invention aims to provide a laser crystal material which can generate 1 micron ultrashort pulse, the disorder degree of the material is larger, and then ultrashort pulse laser can be generated more favorably through a mode locking technology.

In order to achieve the technical effects, the invention adopts the following technical scheme:

a ytterbium-doped strontium-gadolinium-yttrium borate laser crystal, which is Yb³⁺Ion-doped Sr₃(Gd,Y)(BO₃)₄The molecular formula of the crystal is Sr₃Gd_xY_yYb_2-x-y(BO₃)₄Wherein x is 0-2, y is 0-2, Yb³⁺The doping concentration of the ions is 5 at.% to 30 at.%. at.% means atomic number percentage content. Through the verification of multiple experiments, when x is 0-2, y is 0-2, Yb³⁺The doping concentration of (A) is preferably 0 to 30 at% based on the crystal mass. The ytterbium doped strontium gadolinium yttrium borate crystal belongs to an orthorhombic system. In the molecular formula of the crystal, x is not equal to 0, and y is not equal to 0.

The further technical proposal is that in the ytterbium-doped strontium borate gadolinium yttrium laser crystal, Gd and Y elements can be coated by Yb³⁺And (4) substituting.

The invention also provides a preparation method of the ytterbium-doped strontium borate gadolinium yttrium laser crystal, wherein the ytterbium-doped strontium borate gadolinium yttrium laser crystal is prepared by a Czochralski method after mixed crystals are obtained by the following raw materials through solid-phase reaction:

raw materials: gd of 99.99% purity₂O₃Yb of 99.99% purity₂O₃Y of 99.99% purity₂O₃Purity of 99.99% SrCO₃H with a purity of 99.99%₃BO₃；

Solid phase reaction chemical formula:

6SrCO₃+(2-x-y)Yb₂O₃+xGd₂O₃+yY₂O₃+8H₃BO₃

the further technical scheme is that the solid phase reaction comprises the following steps: fully mixing the raw materials, carrying out solid-phase reaction for 20-24 h at the temperature of 800-1000 ℃, and then heating to 1000-1200 ℃ for reaction for 24-30 h to obtain the polycrystalline material.

The further technical scheme is that the pulling method comprises the step of placing a polycrystalline material in a pulling furnace, wherein the pulling speed of growth is 0.5-3 mm/h, and the rotating speed is 4-11 rpm.

The invention also provides the application of the ytterbium-doped strontium borate gadolinium yttrium laser crystal, and the crystal is used for generating ultrafast laser pulses in a 1-micron solid mode-locked laser.

Compared with the prior art, the invention has at least the following beneficial effects: the ytterbium-doped strontium borate gadolinium yttrium laser crystal prepared by the invention has larger disorder degree, Sr₃Gd_xY_yYb_2-x-y(BO₃)₄The mixed crystal property is between Yb and Sr₃Gd₂(BO₃)₄And Yb: Sr₃Y₂(BO₃)₄The crystals have wider emission spectrum, and the mode locking technology is adopted, so that ultrashort pulse laser output is hopeful to obtain.

Drawings

FIG. 1 shows Sr of the present invention₃Gd_0.9Y_0.9Yb_0.2(BO₃)₄Mixed crystal, and Sr₃Y_1.8Yb_0.2(BO₃)₄And Sr₃Gd_1.8Yb_0.2(BO₃)₄XRD diffraction pattern of (a).

FIG. 2 shows Sr of the present invention₃Gd_0.9Y_0.9Yb_0.2(BO₃)₄Mixed crystal, and Sr₃Gd_1.8Yb_0.2(BO₃)₄And Sr₃Y_1.8Yb_0.2(BO₃)₄The emission spectrum of (a).

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.