阅读说明：本技术 一种高磁导率高频率平面电感及其制备方法 (High-permeability high-frequency planar inductor and preparation method thereof ) 是由 赵磊 张晓渝 章强 邢园园 马春兰 于 2019-09-29 设计创作，主要内容包括：本发明涉及一种高磁导率高频率平面电感及其制备方法,它为软磁薄膜,其化学组分通式为Fe<Sub>x</Sub>N<Sub>y</Sub>Hf<Sub>z</Sub>；式中,x为0.7～0.9,y为0.05～0.15,z为0.05～0.15。该平面电感基于Fe<Sub>x</Sub>N<Sub>y</Sub>Hf<Sub>z</Sub>软磁薄膜,具有优异的软磁性能和高的磁导率,为FeNHf薄膜应用于高频电子器件的平面电感提供了必要的材料技术基础；而且结构简单、体积小、重量轻、空间集成度高。(The invention relates to a high-permeability high-frequency planar inductor and a preparation method thereof, wherein the inductor is a soft magnetic film and has a chemical component general formula of Fe x N y Hf z (ii) a Wherein x is 0.7 to 0.9, y is 0.05 to 0.15, and z is 0.05 to 0.15. The planar inductor is based on Fe x N y Hf z The soft magnetic film has excellent soft magnetic performance and high magnetic conductivity, and provides a necessary material technical basis for applying the FeNHf film to a planar inductor of a high-frequency electronic device; and simple structure, small volume, light weight and high space integration level.)

1. A high magnetic conductivity high frequency plane inductance which characterized in that: it is a soft magnetic film, the general formula of the chemical components of which is shown in formula (I),

Fe_xN_yHf_z (Ι)；

wherein x is 0.7 to 0.9, y is 0.05 to 0.15, and z is 0.05 to 0.15.

2. The high permeability high frequency planar inductor of claim 1, wherein: it is deposited on any surface of a medium substrate, the material of the medium substrate is glass, quartz or high-resistivity silicon, and the resistivity of the high-resistivity silicon is higher than 10k omega cm.

3. The high permeability high frequency planar inductor of claim 1, wherein: the thickness of the material is 40-80 nm.

4. The high permeability high frequency planar inductor of claim 1, wherein: its magnetic permeability is higher than 400 at 0.8GHz frequency band, and its resonance frequency is higher than 2.9 GHz.

5. The high permeability high frequency planar inductor of claim 1, wherein: the planar spiral inductor is planar spiral, the line width of the planar spiral inductor is 10-50 mu m, the wire spacing is 10-100 mu m, and the total inductor length is 0.1-1 mm.

6. The high permeability high frequency planar inductor of claim 1, wherein: the planar inductance of the inductor is 5-500 nH.

7. A method for manufacturing a high permeability high frequency planar inductor according to any one of claims 1 to 6, characterized in that it comprises the steps of:

(a) cleaning the medium substrate in an ultra-clean room;

(b) etching an inductance unit array and splitting on the surface of the dielectric substrate by adopting an ultraviolet exposure photoetching process and taking photoresist as a mask;

(c) depositing on the surface of the product obtained in the step (b) by adopting a magnetron sputtering process to form a soft magnetic film layer;

(d) and (c) immersing the product in the step (c) into stripping liquid, and stripping to obtain the high-permeability high-frequency planar inductor formed on the surface of the dielectric substrate.

8. The method for manufacturing a high-permeability high-frequency planar inductor according to claim 7, wherein: in the step (c), the magnetron sputtering process adopts high vacuum magnetron sputtering equipment, and the deposition vacuum bottom is pumped to 1 × 10^-5Below Pa, the target material is an iron target with the purity of 99.99 percent, and a plurality of Hf metal sheets are uniformly arranged on the surface of the iron target.

9. The method for manufacturing a high-permeability high-frequency planar inductor according to claim 8, wherein: in the step (c), the atomic percentage of Hf in the soft magnetic film is controlled according to the number of Hf metal sheets, and each atomic composition ratio is determined through XSP or EDAX energy spectrum tests.

10. The method for manufacturing a high-permeability high-frequency planar inductor according to claim 8, wherein: in the step (c), Ar gas is adopted during the deposition glow starting, and the deposition gas is N₂，N₂The volume of the gas is 5-10% of the volume of the used gas.

Technical Field

The invention belongs to the field of planar inductors, relates to a planar thin film inductor, and particularly relates to a high-permeability high-frequency planar inductor and a preparation method thereof.

Background

Inductors are widely used as basic components of electronic circuits in various electronic fields such as electronic communication equipment. Compared with a resistor and a capacitor, the planar inductor has high frequency and high inductance, which brings technical difficulty to the practical application of the planar inductor. The large inductance device occupies a large volume in the integrated circuit, which is not favorable for the integration and miniaturization of the circuit. Therefore, the development of high frequency and high permeability planar thin film inductors is one of the feasible methods.

At present, the inductance value of the planar thin-film inductor in unit area is small, and the frequency is low; the planar inductor with large inductance value occupies a large area, which is not beneficial to the integration and miniaturization of the circuit. Therefore, it is a very interesting work in the field of electronic technology to study the planar thin film inductor based on high permeability and high frequency.

Disclosure of Invention

The invention aims to overcome the defects of the prior art and provide a high-permeability high-frequency planar inductor.

In order to achieve the purpose, the invention adopts the technical scheme that: a high-permeability high-frequency planar inductor is a soft magnetic thin film, the general formula of the chemical components of the planar inductor is shown in formula (I),

Fe_xN_yHf_z (Ι)；

wherein x is 0.7 to 0.9, y is 0.05 to 0.15, and z is 0.05 to 0.15.

Optimally, the silicon nitride is deposited on any surface of a medium substrate, the material of the medium substrate is glass, quartz or high-resistivity silicon, and the resistivity of the high-resistivity silicon is higher than 10k omega cm.

Optimally, the thickness of the material is 40-80 nm.

Optimally, the magnetic permeability of the magnetic material is higher than 400 in the 0.8GHz frequency band, and the resonance frequency is higher than 2.9 GHz.

Optimally, the planar spiral inductor is planar spiral, the line width of the planar spiral inductor is 10-50 mu m, the wire spacing is 10-100 mu m, and the total inductor length is 0.1-1 mm.

Optimally, the planar inductance of the inductor is 5-500 nH.

The invention also aims to provide a preparation method of the high-permeability high-frequency planar inductor, which comprises the following steps:

(a) cleaning the medium substrate in an ultra-clean room;

(b) etching an inductance unit array and splitting on the surface of the dielectric substrate by adopting an ultraviolet exposure photoetching process and taking photoresist as a mask;

(c) depositing on the surface of the product obtained in the step (b) by adopting a magnetron sputtering process to form a soft magnetic film layer;

(d) and (c) immersing the product in the step (c) into stripping liquid, and stripping to obtain the high-permeability high-frequency planar inductor formed on the surface of the dielectric substrate.

Optimally, in the step (c), the magnetron sputtering process adopts high-vacuum magnetron sputtering equipment, and the deposition vacuum bottom is pumped to 1 × 10^-5Below Pa, the target material is an iron target with the purity of 99.99 percent, and a plurality of Hf metal sheets are uniformly arranged on the surface of the iron target.

Further, in the step (c), the atomic percentage of Hf in the soft magnetic thin film is controlled by the number of Hf metal pieces, and the atomic composition ratio is determined by XSP or EDAX energy spectrum testing.

Further, in the step (c), Ar gas is used for starting deposition, and the deposition gas is N₂，N₂The volume of the gas is 5-10% of the volume of the used gas.

Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages: the invention relates to a high-permeability high-frequency planar inductor based on Fe_xN_yHf_zThe soft magnetic film has excellent soft magnetic performance and high magnetic conductivity, and provides a necessary material technical basis for applying the FeNHf film to a planar inductor of a high-frequency electronic device; and simple structure, small volume, light weight and high space integration level.

Drawings

FIG. 1 is a schematic diagram of the fabrication of a high permeability high frequency planar inductor according to the present invention;

FIG. 2 shows Fe in example 1_xN_yHf_zFrequency dependent dependence of complex permeability mu of soft magnetic filmDrawing: mu' is the real part of complex permeability, is elastic permeability and represents the physical quantity of the stored energy size of the FeNHf soft magnetic film in the magnetization process; mu' is the imaginary part of complex permeability and represents the loss of the FeNHf soft magnetic film in the magnetization process; μ ═ μ' -j μ ″;

FIG. 3 is a schematic diagram of the inductance variation of the high permeability high frequency planar inductor of the present invention in different sizes;

FIG. 4 is a graph of complex permeability μ of the FeNHf soft magnetic film with respect to frequency in example 2;

FIG. 5 is a graph of complex permeability μ of the FeNHf soft magnetic film with respect to frequency in example 3;

FIG. 6 is an elemental analysis chart of a FeNHf soft magnetic thin film in example 3.

Detailed Description

The invention relates to a high-permeability high-frequency planar inductor which is a soft magnetic film and has a chemical component general formula shown in a formula (I),

Fe_xN_yHf_zin the formula (I), x is 0.7-0.9, y is 0.05-0.15, and z is 0.05-0.15. Based on Fe_xN_yHf_zThe (abbreviated as FeNHf) soft magnetic film has excellent soft magnetic performance and high magnetic conductivity, and provides a necessary material technical basis for applying the FeNHf film to the planar inductance of a high-frequency electronic device; and simple structure, small volume, light weight and high space integration level.

It is usually deposited on any surface of a dielectric substrate made of glass, quartz or high resistivity silicon with a resistivity higher than 10k Ω · cm.

The thickness of the planar inductor is preferably 40-80 nm; the magnetic conductivity of the magnetic material is higher than 400 at the frequency band of 0.8GHz, and the resonance frequency is higher than 2.9 GHz; the planar spiral inductor is planar spiral, the line width of the planar spiral inductor is 10-50 mu m, the wire spacing is 10-100 mu m, and the total inductor length is 0.1-1 mm; the planar inductance of the inductor is 5-500 nH.

The preparation method of the high-permeability high-frequency planar inductor comprises the following steps: (a) cleaning the medium substrate in an ultra-clean room; (b) etching on the surface of the dielectric substrate by using an ultraviolet exposure photoetching process and using photoresist as a maskForming an inductance unit array and splitting; (c) depositing on the surface of the product obtained in the step (b) by adopting a magnetron sputtering process to form a soft magnetic film layer; (d) and (c) immersing the product in the step (c) into stripping liquid, and stripping to obtain the high-permeability high-frequency planar inductor formed on the surface of the dielectric substrate. In the step (c), the magnetron sputtering process adopts high vacuum magnetron sputtering equipment, and the deposition vacuum bottom is pumped to 1 × 10^-5Below Pa, the target material is an iron target with the purity of 99.99 percent, and a plurality of Hf metal sheets are uniformly arranged on the surface of the iron target. In the step (c), the atomic percentage of Hf in the soft magnetic film is controlled according to the number of Hf metal sheets, and each atomic composition ratio is determined through XSP or EDAX energy spectrum tests. In the step (c), Ar gas is adopted during the deposition glow starting, and the deposition gas is N₂，N₂The volume of the gas is 5-10% of the volume of the used gas.

Compared with the prior planar inductor patent, the invention has at least the following advantages: (1) the materials used were different: in the Chinese invention patents with application numbers of 201710587547.X and 201210526634.1, alloy materials such as FeNi, iron and nickel and the like are respectively selected as magnetic core materials, while FeNHf is selected as a magnetic core in the invention, so that the magnetic core has the advantages of higher working frequency and higher magnetic conductivity; (2) the practicability is strong: compared with a multilayer composite structure designed in a Chinese invention patent with the application number of 201710587547.X, the planar inductor disclosed by the invention is simple in structure, small in size, light in weight and high in spatial integration degree; (3) the method has high commercialization value, and compared with the time and cost required for completing the preparation of the planar inductor in the Chinese invention patent with the application number of 201210526634.1, the time and production cost for preparing the planar inductor are lower, so that the method is more suitable for commercialization; (4) compared with the manual folding step adopted in the process of preparing the planar inductor in the Chinese patent with the application number of 201210526634.1, the micro-nano processing technology is adopted to control in the process of completing the preparation of the planar spiral inductor, so that the planar spiral inductor is high in reliability and high in precision.

The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings: