阅读说明：本技术 一种液相基底沉石墨烯分离方法 (liquid-phase substrate graphene precipitation separation method ) 是由 乔宪武 丁红 于 2019-10-22 设计创作，主要内容包括：本发明涉及一种石墨烯材料的制备领域,特别涉及一种液相基底沉石墨烯分离方法。在液相基底上沉积石墨烯薄膜,二甲基硅油均匀涂覆在基底表面,涂覆好样品放入沉积位置,将起催化作用的衬底放在硅油表面,能够大面积沉积高质量石墨烯薄膜。本方法将有利于制备大面积高质量石墨烯薄膜,减少石墨烯发生的团聚现象,大大提高其比表面积。(The invention relates to the field of preparation of graphene materials, in particular to a separation method of liquid-phase substrate-precipitated graphene. The graphene film is deposited on the liquid-phase substrate, the dimethyl silicone oil is uniformly coated on the surface of the substrate, the coated sample is placed in a deposition position, and the substrate with the catalysis effect is placed on the surface of the silicone oil, so that the high-quality graphene film can be deposited in a large area. The method is beneficial to preparing large-area high-quality graphene films, reduces the agglomeration phenomenon of graphene, and greatly improves the specific surface area of the graphene.)

1. A liquid-phase substrate precipitation graphene separation method is characterized in that:

(1) Selecting a silicon wafer or glass with proper size as a deposition substrate, ultrasonically cleaning the surface of the substrate by using an organic solvent, and drying the substrate by cold air for later use after cleaning;

(2) Uniformly coating dimethyl silicone oil on the surface of a substrate, putting the coated sample into a deposition position, and adjusting the height of a graphene preparation system;

(3) Putting the graphite oxide particles into a graphene preparation system, starting the graphene preparation system, and enabling the graphene preparation system to perform microwave irradiation and vibration on the graphite oxide particles to form the required graphene;

(4) And after the graphene is prepared and generated in the third step, collecting the graphene, and rapidly stripping the graphene film under the constant temperature condition of the vacuum chamber.

2. The method of claim 1, wherein: and transferring the deposited graphene film onto a semiconductor, and uniformly coating the conductive plastic on the upper surface of the semiconductor for packaging.

Technical Field

The invention relates to the field of preparation of graphene materials, in particular to a separation method of liquid-phase substrate-precipitated graphene.

Background

the sensor based on excellent electric, optical and magnetic properties of the graphene is an indispensable electric sensory system for production and life, and the application of the graphene material lays a foundation for realizing sensitivity, intellectualization and convenience of the sensor. Graphene has outstanding and unique electronic properties such as providing large area detection, ultra-high mobility and ambipolar field effect, and is considered to be an excellent biosensing material. Therefore, the graphene medical sensor also has a hot trend in research.

Based on the excellent electrical properties and the boundary electrical specific properties of graphene, graphene is expected to be applied to the field of stress-strain sensors. Single layer graphene is expected to be a potential stress sensor. And printing graphene on a transparent plastic or rubber substrate by adopting a counter ion etching technology or a stamping technology, and detecting the change of the compressive resistance of the graphene under the action of stress so as to further infer the magnitude of the stress.

The problems that exist are that: the existing methods for preparing graphene mainly comprise graphite stripping, a chemical oxidation-reduction method, an ultrasonic stripping method and the like. The graphene layer deposited on the surface of the semiconductor is limited by the strips, the shape of the prepared graphene is basically irregular, the number of layers cannot be controlled, and the graphene prepared by the chemical oxidation-reduction method is easy to agglomerate, so that the specific surface area of the graphene is greatly reduced.

disclosure of Invention

in order to solve the technical problems, the invention provides a separation method of liquid-phase substrate-precipitated graphene, which is characterized by comprising the following steps of:

(1) selecting a silicon wafer or glass with proper size as a deposition substrate, ultrasonically cleaning the surface of the substrate by using an organic solvent, and drying the substrate by cold air for later use after cleaning;

(2) Uniformly coating dimethyl silicone oil on the surface of a substrate, putting the coated sample into a deposition position, and adjusting the height of a graphene preparation system;

(3) Putting the graphite oxide particles into a graphene preparation system, starting the graphene preparation system, and enabling the graphene preparation system to perform microwave irradiation and vibration on the graphite oxide particles to form the required graphene;

(4) And after the graphene is prepared and generated in the third step, collecting the graphene, and rapidly stripping the graphene film under the constant temperature condition of the vacuum chamber.

The graphene film deposited on the liquid phase substrate is separated by the method, and the dimethyl silicone oil is absorbed by the organic solvent, so that the graphene film is obtained. And transferring the deposited graphene onto a semiconductor, and uniformly coating the conductive plastic on the upper surface of the semiconductor for packaging.

the method is favorable for preparing large-area high-quality graphene films, reduces the agglomeration phenomenon of graphene, and greatly improves the specific surface area of the graphene.

Detailed Description

The graphene is prepared by the following steps: selecting a silicon wafer or glass with proper size as a deposition substrate, ultrasonically cleaning the surface of the substrate by using an organic solvent, and drying the substrate by cold air for later use after cleaning. Uniformly coating dimethyl silicone oil on the surface of a base, putting a coated sample in a deposition position, putting a substrate with a catalytic effect on the surface of the silicone oil, and vacuumizing; adjusting the temperature of the substrate to 1000-1300 ℃, introducing inert gas, and keeping for 1-60 minutes to keep an oxygen-free atmosphere in the reaction chamber; and introducing organic gas of 10-200 sccm into the reaction chamber to react for 10-100 minutes, and adjusting the introduction speed of the inert gas to change according to 10-200 sccm/min to obtain the graphene. And separating the graphene film deposited on the liquid phase substrate, and absorbing the dimethyl silicone oil through an organic solvent to obtain the graphene film. And transferring the deposited graphene onto a semiconductor, and uniformly coating the conductive plastic on the upper surface of the semiconductor.