阅读说明：本技术 一种采用硅橡胶制备电缆局部放电缺陷模型的方法 (Method for preparing cable partial discharge defect model by adopting silicon rubber ) 是由 肖睿 张云朋 胡海燕 张磊 曲奎龙 辛超 于 2018-06-06 设计创作，主要内容包括：本发明公开了一种采用硅橡胶制备电缆局部放电缺陷模型的方法,属于高压电缆绝缘材料局部放电检测技术领域,采用硅橡胶作为电缆局部放电缺陷模型的主绝缘材料,通过在铜芯及模具套中浇注硅橡胶,高温硫化后一次成型,局部放电缺陷直接在加工过程中制作完成,通过控制硅橡胶温度、流速及混入杂质可制作不同的局部放电缺陷。本发明可实现将局部放电缺陷在模型加工过程中制作完成,能模拟生产过程中产生的气泡、杂质等缺陷,具有透明易观察等特点,具有重要的现实意义。(The invention discloses a method for preparing a cable partial discharge defect model by adopting silicon rubber, which belongs to the technical field of partial discharge detection of high-voltage cable insulation materials. The invention can realize the completion of the manufacture of the partial discharge defect in the model processing process, can simulate the defects of bubbles, impurities and the like generated in the production process, has the characteristics of transparency, easy observation and the like, and has important practical significance.)

1. a method for preparing a cable partial discharge defect model by adopting silicon rubber is characterized by comprising the following steps: silicon rubber is used as a main insulating material of a cable partial discharge defect model, the silicon rubber is poured into a copper core and a mould sleeve, and is molded once after high-temperature vulcanization, the partial discharge defect is directly manufactured in the processing process, and different partial discharge defects can be manufactured by controlling the temperature, the flow rate and impurities mixed in the silicon rubber; the method specifically comprises the following steps:

Step 1: carrying out smoothing treatment on the surface of the copper core;

step 2: uniformly spraying a semi-conductive material on the copper core until the semi-conductive material is completely dried;

And step 3: placing the copper core sprayed with the semiconductive material into a mold for casting a silicon rubber main insulating material, dispersing and mixing metal particles in the silicon rubber main insulating material, and controlling the temperature and the flow rate in the casting process;

and 4, step 4: putting the copper core cast with the silicon rubber main insulating material into an oven for drying, and controlling the temperature to be about 120 ℃;

and 5: demolding the model obtained in the step (4), and uniformly spraying a semiconductive material on the outer layer of the main silicon rubber insulating material until the semiconductive material is completely dried;

Step 6: a stress cone is wound by hand, and a copper braided belt is wound outside the stress cone to serve as an outer shielding layer;

and 7: and preparing a cable partial discharge defect model.

Technical Field

the invention belongs to the technical field of partial discharge detection of high-voltage cable insulating materials, and particularly relates to a method for preparing a cable partial discharge defect model by adopting silicon rubber.

background

the operation reliability of the power cable is directly related to the safety and stability of a power system, and the statistical data shows that the operation accidents of the power cable are mainly caused by partial discharge faults caused by insulation defects of the power cable, so the operation life of the cable is greatly dependent on the operation state of an insulating material. In the operation process of the cable, the insulating material is subjected to various external stress effects such as heat, electricity, machinery, chemistry and the like for a long time, so that the self insulation and the mechanical property are gradually reduced, and partial discharge can be caused to cause cable accidents. Therefore, the method is used for accurately measuring the partial discharge condition of the cable insulating material and diagnosing the running state of the cable insulating material, is very important for predicting the service life of the cable, and is also a premise and a basis for realizing the state maintenance of the cable.

disclosure of Invention

Aiming at the technical problems in the prior art, the invention provides the method for preparing the cable partial discharge defect model by adopting the silicon rubber, which has reasonable design, overcomes the defects of the prior art and has good effect.

In order to achieve the purpose, the invention adopts the following technical scheme:

a method for preparing a cable partial discharge defect model by adopting silicon rubber, wherein the silicon rubber is used as a main insulating material of the cable partial discharge defect model, the silicon rubber is poured into a copper core and a mould sleeve, and is subjected to one-step molding after high-temperature vulcanization, partial discharge defects are directly manufactured in the processing process, and different partial discharge defects can be manufactured by controlling the temperature, the flow rate and impurities of the silicon rubber; the method specifically comprises the following steps:

Step 1: carrying out smoothing treatment on the surface of the copper core;

step 2: uniformly spraying a semi-conductive material on the copper core until the semi-conductive material is completely dried;

And step 3: placing the copper core sprayed with the semiconductive material into a mold for casting a silicon rubber main insulating material, dispersing and mixing metal particles in the silicon rubber main insulating material, and controlling the temperature and the flow rate in the casting process;

And 4, step 4: putting the copper core cast with the silicon rubber main insulating material into an oven for drying, and controlling the temperature to be about 120 ℃;

and 5: demolding the model obtained in the step (4), and uniformly spraying a semiconductive material on the outer layer of the main silicon rubber insulating material until the semiconductive material is completely dried;

Step 6: a stress cone is wound by hand, and a copper braided belt is wound outside the stress cone to serve as an outer shielding layer;

And 7: and preparing a cable partial discharge defect model.

The invention has the following beneficial technical effects:

the invention can realize the completion of the manufacture of the partial discharge defect in the model processing process, can simulate the defects of bubbles, impurities and the like generated in the production process, has the characteristics of transparency, easy observation and the like, and has important practical significance.

drawings

FIG. 1 is a schematic diagram of a metal particle defect model.

FIG. 2 is a schematic diagram of a bubble defect model.

wherein, 1-copper core; 2-an inner semiconductive coating; 3, silicon rubber insulation; 4-an outer semiconductive coating; 5-copper braided belt; 6-a shielding case; 7-a plug-in connector; 8-a housing; 9-metal particles; 10-bubbles.

Detailed Description

the invention is described in further detail below with reference to the following figures and detailed description: