Surface treatment method of sintered zirconia material and application thereof

文档序号:1729874 发布日期:2019-12-20 浏览:33次 中文

阅读说明:本技术 一种烧结氧化锆材料的表面处理方法及其应用 (Surface treatment method of sintered zirconia material and application thereof ) 是由 原福松 吕培军 于 2019-09-18 设计创作,主要内容包括:本发明实施例公开了一种烧结氧化锆材料的表面处理方法及其应用,所述处理方法采用超短脉冲激光对烧结氧化锆材料表面进行处理。本发明通过选用超短脉冲激光对烧结氧化锆材料表面进行处理,能够实现对烧结氧化锆材料的表面处理,而且该方法能够避免机械接触,避免机械加工产生的微裂纹以及杂质的引入;此外,该方法操作容易,工艺简单,节省了时间。(The embodiment of the invention discloses a surface treatment method of a sintered zirconia material and application thereof. According to the method, the surface of the sintered zirconia material is treated by selecting the ultrashort pulse laser, so that the surface treatment of the sintered zirconia material can be realized, and the method can avoid mechanical contact and avoid introduction of microcracks and impurities generated by mechanical processing; in addition, the method is easy to operate, simple in process and time-saving.)

1. A surface treatment method of a sintered zirconia material is characterized in that ultrashort pulse laser is adopted to treat the surface of the sintered zirconia material.

2. The treatment method according to claim 1, wherein the treatment is specifically irradiation treatment of the surface of the sintered zirconia material with ultrashort pulse laser.

3. The processing method of claim 1, wherein the ultrashort pulse laser is a femtosecond laser or a picosecond laser.

4. The processing method as claimed in claim 1, wherein the frequency of the ultra-short pulse laser is 100-500KHz, and the power is 4-10W.

5. The treatment method according to claim 1, wherein the surface treatment is a roughening treatment or a polishing treatment.

6. The method as claimed in claim 3, wherein when the surface treatment is roughening treatment, the frequency of the ultrashort pulse laser is 100 KHz and the power is 4-6W.

7. The processing method as claimed in claim 3, wherein when the surface treatment is polishing treatment, the frequency of the ultrashort pulse laser is 100-500KHz, and the power is 7-10W.

8. Use of the treatment method of any one of claims 1 to 7 in the surface treatment of a dental restoration, implant or abutment.

Technical Field

The embodiment of the invention relates to the technical field of surface treatment, in particular to a surface treatment method of a sintered zirconia material and application thereof.

Background

At present, zirconia and resin can not achieve ideal bonding strength, the zirconia restoration falls off clinically, and the poor retention rate of the zirconia restoration is the highest in all-ceramic materials. The bonding force of the zirconia bonding surface can be improved by performing certain pretreatment on the zirconia bonding surface. At present, the inner surface of zirconia is treated mainly by sand blasting, so that the roughness of the surface of the zirconia can be increased, and the bonding force of the zirconia is improved. The sol-gel method is a preparation method of a silicon coating, can modify the surface of zirconia, generates a layer of film on the surface of the zirconia, has high silicon element content in the film, and can increase the bonding force of the zirconia by combining with the use of a coupling agent. However, the adhesion of the zirconia is improved slightly no matter by sand blasting or sol-gel method, and the clinical requirement cannot be met only by simple treatment.

The surface microscopic morphology and roughness of the implant are one of the key factors affecting implant osseointegration. Similar to titanium implant, in vitro experiments, animal experiments and clinical experiments prove that the zirconia implant with rough surface is more favorable for improving the osseointegration rate of the implant and the stability of the osseointegration interface than the smooth surface. The prior surface treatment by sand blasting and sand blasting heating acid etching is proved to be beneficial to the osseointegration of the zirconia implant, but is easy to introduce impurities and cause mechanical damage to the implant.

The smoothness of the implant abutment is a main factor influencing the formation and attachment of soft tissues. At present, the surface of a titanium planting base station or a zirconium oxide planting base station is treated by adopting a mechanical polishing method, and mechanical damage and impurity introduction also occur.

Disclosure of Invention

Therefore, the embodiment of the invention provides a surface treatment method for a sintered zirconia material, which aims to solve the problems of material damage and impurity introduction caused by surface treatment by methods such as sand blasting, thermal acid etching and machinery in the prior art.

In order to achieve the above object, the embodiments of the present invention provide the following technical solutions:

according to a first aspect of the embodiments of the present invention, a surface treatment method for a sintered zirconia material is provided, where the surface treatment method is to treat the surface of the sintered zirconia material with an ultrashort pulse laser.

According to the method, the surface of the sintered zirconia material is irradiated by selecting the ultrashort pulse laser, so that the surface of the sintered zirconia material can be treated, mechanical contact can be avoided, and microcracks and impurity introduction caused by mechanical processing can be avoided; in addition, the method is easy to operate, simple in process and time-saving.

Further, the treatment is specifically irradiation treatment of the surface of the sintered zirconia material by using ultrashort pulse laser.

Further, the ultrashort pulse laser is a femtosecond laser or a picosecond laser.

Furthermore, the frequency of the ultrashort pulse laser is 100-500KHz, and the power is 4-10W.

Further, the surface treatment is roughening treatment or polishing treatment.

Further, when the surface treatment is roughening treatment, the frequency of the ultrashort pulse laser is 100-500KHz, and the power is 4-6W.

Further, when the surface treatment is polishing treatment, the frequency of the ultrashort pulse laser is 100-500KHz, and the power is 7-10W.

The invention can better improve the surface treatment effect by selecting specific ultrashort pulse laser aiming at different surface treatments.

According to a second aspect of embodiments of the present invention there is provided a use of the above-described treatment method in the surface treatment of an oral prosthesis, implant or abutment.

The embodiment of the invention has the following advantages:

according to the method, the surface of the sintered zirconia material is irradiated by selecting the ultrashort pulse laser, so that the surface of the sintered zirconia material can be treated, mechanical contact can be avoided, and microcracks and impurity introduction caused by mechanical processing can be avoided; in addition, the method is easy to operate, simple in process and time-saving.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. It should be apparent that the drawings in the following description are merely exemplary, and that other embodiments can be derived from the drawings provided by those of ordinary skill in the art without inventive effort.

FIG. 1 is a laser roadmap for the surface treatment process of the present invention;

fig. 2 is a three-dimensional confocal laser scanning microscope measurement result of a sintered zirconia sample wafer subjected to laser polishing treatment provided in embodiment 1 of the present invention;

FIG. 3 is a scanning electron microscope image of a sintered zirconia sample wafer subjected to roughening treatment provided in example 2 of the present invention;

FIG. 4 is a three-dimensional confocal laser microscopy measurement result of a polished sintered zirconia sample wafer according to comparative example 1 of the present invention;

FIG. 5 is a scanning electron microscope image of a sintered zirconia sample wafer provided in comparative example 2 of the present invention after being subjected to a roughening treatment.

Detailed Description

The present invention is described in terms of particular embodiments, other advantages and features of the invention will become apparent to those skilled in the art from the following disclosure, and it is to be understood that the described embodiments are merely exemplary of the invention and that it is not intended to limit the invention to the particular embodiments disclosed. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

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