阅读说明：本技术 一种半导体结构和制备半导体结构的方法 (A kind of semiconductor structure and the method for preparing semiconductor structure ) 是由 向鹏 程凯 于 2017-04-24 设计创作，主要内容包括：一种半导体结构和制备半导体结构的方法,解决了现有技术中在衬底上外延生长半导体化合物外延结构所存在的易龟裂、翘曲大以及位错密度大的问题。该半导体结构包括：衬底(1)；设置在所述衬底(1)上方的至少一个周期结构(3)；其中,每个所述周期结构(3)包括至少一个周期,每个所述周期包括沿外延方向依次叠加的第一周期层(31)和第二周期层(32)。(A kind of semiconductor structure and the method for preparing semiconductor structure, solve the problems, such as to be epitaxially grown on the substrate in the prior art present in semiconducting compound epitaxial structure be easily cracked, warpage is big and dislocation density is big.The semiconductor structure includes: substrate (1)；At least one periodic structure (3) being arranged above the substrate (1)；Wherein, each periodic structure (3) includes at least one period, and each period includes the period 1 layer (31) and second round layer (32) being sequentially overlapped along extension direction.)