阅读说明：本技术 一种具有纯轴向变形敏感梁的mems压阻式三轴冲击加速度计芯片及其制备方法 (A kind of three axis shock accelerometer chip of MEMS piezoresistive and preparation method thereof with purely axial deformation sensitive beam ) 是由 赵立波 于明智 马银涛 贾琛 皇咪咪 杨萍 王久洪 蒋庄德 于 2019-07-26 设计创作，主要内容包括：本发明公开了一种具有纯轴向变形敏感梁的MEMS压阻式三轴冲击加速度计芯片及其制备方法,该芯片包括X、Y、Z三个测量单元组成,分别用来测量X、Y、Z三个方向的加速度；无论是哪个测量单元,支撑量与敏感梁分离,支撑梁主要作用是支撑质量块运动,而应力主要集中于敏感梁,使得敏感梁上的压敏电阻条阻值发生变化,极大的弱化了灵敏度与谐振频率的相互制约关系,使得传感器的灵敏度和谐振频率都有了很大提高；无论是哪个测量单元,当受到某一方向的作用力时,两质量块的同步运动,与其固定的敏感梁两端也同步运动,从而敏感梁始终满足纯轴向变形条件,在相同谐振频率下,传感器的灵敏度达到最优。(The invention discloses a kind of three axis shock accelerometer chip of MEMS piezoresistive and preparation method thereof with purely axial deformation sensitive beam, the chip include tri- measuring units compositions of X, Y, Z, are respectively used for measuring the acceleration in tri- directions X, Y, Z；Either which measuring unit, amount of support is separated with sensitive beam, supporting beam main function is support mass block movement, and stress focuses primarily upon sensitive beam, so that the varistor resistance value in sensitive beam changes, the mutual restricting relation for greatly weakening sensitivity and resonance frequency, so that the sensitivity of sensor and resonance frequency have large increase；Either which measuring unit, when the active force by a direction, two mass blocks are moved synchronously, the sensitive beam both ends being secured to also move synchronously, to which sensitive beam meets purely axial deformation condition always, under identical resonance frequency, the sensitivity of sensor is optimal.)

1. a kind of three axis shock accelerometer chip of MEMS piezoresistive with purely axial deformation sensitive beam, which is characterized in that packet It includes chip outline border (1), is fixedly installed X measuring unit, Y measuring unit and Z measuring unit in the chip outline border (1)；Three Measuring unit is isolated by chip outline border (1)；The vertical centerline of Z measuring unit and the vertical centerline of Y measuring unit are flat For row in x-axis, the vertical centerline of X measuring unit is parallel to y-axis；Z measuring unit includes the second sub- measuring unit (2-2) and third Sub- measuring unit (2-3)；

The second sub- measuring unit (2-2) includes third mass block (2-6) and the 4th mass block (2-7)；Third mass block (2- 6) two sides pass through second supporting beam (4-2) respectively and are fixedly connected with chip outline border (1), the 4th mass block (2-7) Two sides pass through second supporting beam (4-2) respectively and be fixedly connected with chip outline border (1)；Third mass block (2-6) The medial surface of medial surface and the 4th mass block (2-7) is connected by several second sensitive beams (5-2)；

The sub- measuring unit of third (2-3) includes the 5th mass block (2-8) and the 6th mass block (2-9)；5th mass block (2- 8) two sides pass through a third supporting beam (4-3) respectively and are fixedly connected with chip outline border (1), the 6th mass block (2-9) Two sides pass through a third supporting beam (4-3) respectively and be fixedly connected with chip outline border (1)；5th mass block (2-8) The medial surface of medial surface and the 6th mass block (2-9) is connected by several third sensitive beams (5-3)；

Varistor in second sensitive beam (5-2) and third sensitive beam (5-3) is formed by the second metal lead wire (6-2) connection Favour stone full-bridge；

The lower end surface of chip outline border (1) is bonded with glass plate (7).

2. a kind of three axis shock accelerometer of MEMS piezoresistive with purely axial deformation sensitive beam according to claim 1 Chip, which is characterized in that the second sub- measuring unit (2-2) is provided with first groove (18-1), the first ditch along its vertical centerline Slot (18-1) separates third mass block (2-6) and the 4th mass block (2-7)；Second sub- measuring unit (2-2) face on the outside There are two second groove (18-2) for setting, and two second grooves (18-2) are relative to the second vertical center of sub- measuring unit (2-2) Line is symmetrical, the side of each the second supporting beam (4-2) and first groove (18-1) contact, the other side and a second groove One end of (18-2) contacts；

The sub- measuring unit of third (2-3) is provided with the 4th groove (18-4) along its vertical centerline, and the 4th groove (18-4) is by Five mass blocks (2-8) and the 6th mass block (2-9) separate, and the sub- measuring unit of third (2-3) is respectively set in two lateral surface There are the 6th groove (18-6), vertical centerline of two the 6th grooves (18-6) relative to the sub- measuring unit of third (2-3) Symmetrically, the end of the 4th groove (18-4) is each provided with a 5th vertical groove (18-5)；Each third supporting beam The end contact of the side of (4-3) and the contact of the 6th groove (6), the other side and the 5th groove (18-5).

3. a kind of three axis shock accelerometer of MEMS piezoresistive with purely axial deformation sensitive beam according to claim 2 Chip, which is characterized in that the second groove (18-2) includes second side (18-2-2) and is arranged in second side (18-2- 2) first side (18-2-1) at both ends；Second side (18-2-2) is parallel to first groove (18-1), first side (18-2- 1) perpendicular to second side (18-2-2)；The side of each the second supporting beam (4-2) and first groove (18-1) contact, it is another Side and the contact of the end of a second side (18-2-2).

4. a kind of three axis shock accelerometer of MEMS piezoresistive with purely axial deformation sensitive beam according to claim 2 Chip, which is characterized in that the lower end of second supporting beam (4-2) and the third supporting beam (4-3) and glass plate (7) Bonding.

5. a kind of three axis shock accelerometer of MEMS piezoresistive with purely axial deformation sensitive beam according to claim 2 Chip, which is characterized in that array is provided with several the second sensitive beams (5-2) in first groove (18-1), each is second quick The inner side edge for feeling one end third mass block (2-6) of beam (5-2) is fixedly connected, the inside of the other end and the 4th mass block (2-7) While being fixedly connected；

Array is provided with several third sensitive beams (5-3) on 4th groove (18-4), each one end third sensitive beam (5-3) It is fixedly connected with the inner side edge of the 5th mass block (2-8), the inner side edge of the other end and the 6th mass block (2-9) is fixedly connected.

6. a kind of three axis shock accelerometer of MEMS piezoresistive with purely axial deformation sensitive beam according to claim 5 Chip, which is characterized in that the second sensitive beam (5-2) quantity of the cross central line two sides of the second sub- measuring unit (2-2) is equal, Third sensitive beam (5-3) quantity of the cross central line two sides of the sub- measuring unit of third (2-3) is equal.

7. a kind of three axis shock accelerometer of MEMS piezoresistive with purely axial deformation sensitive beam according to claim 1 Chip, which is characterized in that X measuring unit is identical with the structure of Y measuring unit, two the first sub- measuring units (2-1) of each freedom Composition, each first sub- measuring unit (2-1) include the first mass block (2-4) and the second mass block (2-5), the first mass block The lateral surface of the lateral surface of (2-4) and the second mass block (2-5) is each by first supporting beam (4-1) and chip outline border (1) it connects, the medial surface of the first mass block (2-4) and the second mass block (2-5) passes through hinge beam (3) and the first sensitive beam (5- 1) it connects.

8. a kind of three axis shock accelerometer of MEMS piezoresistive with purely axial deformation sensitive beam according to claim 1 Chip, which is characterized in that first supporting beam (4-1) and hinge beam (3) are respectively positioned on the first sub- measuring unit (2-1) transverse direction Center.

9. a kind of three axis shock accelerometer of MEMS piezoresistive with purely axial deformation sensitive beam according to claim 1 Chip, which is characterized in that there are two the first sensitive beam (5-1) for the side setting of each hinge beam (3)；Wherein close to hinge beam (3) two the first sensitive beams (5-1) relative to hinge beam (3) symmetrically, far from hinge beam (3) two the first sensitive beam (5- 1) symmetrical relative to hinge beam (3)；Varistor is provided in first sensitive beam (5-1), on four the first sensitive beams (5-1) Varistor is connected by the first metal lead wire (6-1), forms semi-loop favour stone full-bridge circuit.

10. a kind of MEMS piezoresistive three axis shock accelerometer core as claimed in claim 7 with purely axial deformation sensitive beam The preparation method of piece, which comprises the following steps:

Step 1, two-sided thermal oxide is carried out to soi wafer, is respectively formed one layer of hot oxygen two in the upper and lower surfaces of soi wafer The hot oxygen silicon dioxide layer (11) of silicon oxide layer, respectively upper layer and the hot oxygen silicon dioxide layer (12) of bottom；

Step 2, the hot oxygen silicon dioxide layer in upper layer in the lightly doped region of the front SOI is removed by reaction ionic etching method (11), it after adulterating boron ion in lightly doped region, is formed lightly doped district (13)；

Step 3, it in one layer photoresist of the front surface coated of soi wafer (14), is then removed by reaction ionic etching method heavily doped The hot oxygen silicon dioxide layer (11) in upper layer in miscellaneous region carries out heavy doping in heavily doped region, is formed ohmic contact regions (15)；

Step 4, one layer of deposited silicon dioxide layer is formed using plasma reinforced chemical vapour deposition method in the front of SOI piece (16), etch lead hole；Through physical vaporous deposition depositing Ti/Al layers on silicon dioxide layer (16), makes metal by lithography and draw The structure of line (6) and pad (17)；

Step 5, the hot oxygen silica of bottom in the movement clearance region of the SOI piece back side is removed by reaction ionic etching method (12), then pass through inductively coupled plasma etching side in the back side movement clearance region of substrate silicon (10) in soi wafer Method etches gap；

Step 6, bottom is formed by the vapour deposition process of plasma enhanced chemical at the back side of the hot oxygen silica (12) of bottom Layer silicon nitride layer (18)；

Step 7, the underlying silicon nitride layer (18) in back-etching region, the etched area are removed by reaction ionic etching method Domain is in movement clearance region；It is etched in etch areas by deep reaction ion etching method, is etched to buried oxide layer (9)；Shape At supporting beam (4), the lower half portion of hinge beam (3) and all mass blocks；

Step 8, hot oxygen silicon dioxide layer (11) and the deposition two in positive etch areas are removed by reaction ionic etching method Silicon oxide layer (16) is then etched to buried oxide layer (9) by inductively coupled plasma etching method, and supporting beam (4), hinge are formed The overall structure of the top half and sensitive beam (5) of beam (3) and all mass blocks；

Step 9, the SOI piece front for having etched completion is protected using photoresist, then utilizes buffer from back-etching Buried oxide layer (9) will dry after the rinsing of SOI piece, remove positive photoresist (14), chip be made；

Step 10, in glass plate (7) glazing carved glass metallic region, Cr/Au layers (19) are sputtered on glass plate (7) later, it will Chip made from step 9 passes through anode linkage on glass plate (7), the MEMS piezoresistive with purely axial deformation sensitive beam The preparation of three axis shock accelerometer chips is completed.

[technical field]

The invention belongs to micro-mechanical electronic system sensor element fields, and in particular to one kind has purely axial deformation sensitive Three axis shock accelerometer chip of MEMS piezoresistive of beam and preparation method thereof.

[background technique]

Further investigation with the development of Penetrator Weapon in recent years and to impact explosion phenomenon measures projectile penetrating acceleration Degree-time history curve seems particularly necessary, meanwhile, the impact acceleration born in Penetration reaches tens of thousands of to hundreds of thousands of, In Penetration, the severe force environment of body brings very test to the survival of overload measurement sensor and test macro, It also proposed harsh requirement to overload measurement technology, projectile penetrating overload measurement technology, which has become, restricts Penetrator Weapon development One of technological difficulties.The frequency spectrum of multinomial actual measurement multilayer penetration signal and the simulation analysis of penetration model are studies have shown that multilayer is invaded The essential characteristic of thorough acceleration signal has: (1) time-domain curve shows as multimodality；(2) bent when each layer of target plate of projectile penetrating Line feature is consistent with overload signal feature when projectile penetrating single layer same type target；(3) acceleration peak value is high, and magnitude reaches More than tens of thousands of, the multiple shock resistance of test device is put forward higher requirements；(4) dynamic range is big, and amplitude variation is fast, therefore, The preferable sensor of dynamic characteristic must be selected, i.e., higher requirement is proposed to intrinsic frequency and sensitivity, but it is intrinsic Frequency and sensitivity sheet need to improve sensitivity as the relationship mutually restricted, therefore while guaranteeing intrinsic frequency simultaneously；When When accelerometer chip measures the acceleration perpendicular to chip, because the deformation direction of its measuring unit is perpendicular to chip surface, So that intrinsic frequency and the balance of sensitivity are more not easy.

[summary of the invention]

It is an object of the invention to overcome the above-mentioned prior art, provide a kind of with purely axial deformation sensitive beam Three axis shock accelerometer chip of MEMS piezoresistive and preparation method thereof；The sensor is designed using the method for separation function structure The detection structure sensitive beam and support construction supporting beam of three axis jerk acceleration transducer of MEMS piezoresistive out, wherein support unit It is separated with sensitive structure, greatly weakens the mutual restricting relation of sensitivity and resonance frequency, so that the sensitivity of sensor There is large increase with resonance frequency, improves the performance of sensor.

In order to achieve the above objectives, the present invention is achieved by the following scheme:

A kind of three axis shock accelerometer chip of MEMS piezoresistive with purely axial deformation sensitive beam, including outside chip Frame is fixedly installed X measuring unit, Y measuring unit and Z measuring unit in the chip outline border；Three measuring units pass through core The isolation of piece outline border；The vertical centerline of Z measuring unit and the vertical centerline of Y measuring unit are each parallel to x-axis, X measuring unit Vertical centerline be parallel to y-axis；Z measuring unit includes the second sub- measuring unit and the sub- measuring unit of third；

The second sub- measuring unit includes third mass block and the 4th mass block；Distinguish two sides of third mass block It is fixedly connected by second supporting beam with chip outline border, two sides of the 4th mass block pass through one second support respectively Beam is fixedly connected with chip outline border；The medial surface of the medial surface of third mass block and the 4th mass block passes through several the second sensitivities Beam connection；

The sub- measuring unit of third includes the 5th mass block and the 6th mass block；Distinguish two sides of the 5th mass block It is fixedly connected by a third supporting beam with chip outline border, two sides of the 6th mass block pass through a third support respectively Beam is fixedly connected with chip outline border；The medial surface of 5th mass block and the medial surface of the 6th mass block are sensitive by several thirds Beam connection；

Second sensitive beam connects to form favour stone full-bridge by the second metal lead wire with the varistor in third sensitive beam；

The lower end surface of chip outline border is bonded with glass plate.

A further improvement of the present invention is that:

Preferably, the second sub- measuring unit is provided with first groove along its vertical centerline, and first groove is by third quality Block and the 4th mass block separate；There are two second groove, two second groove phases for face setting on the outside for second sub- measuring unit Measuring unit vertical centerline sub- for second is symmetrical, the side of each the second supporting beam and first groove contact, the other side It is contacted with an end of a second groove；

The sub- measuring unit of third is provided with the 4th groove along its vertical centerline, and the 4th groove is by the 5th mass block and the 6th Mass block separates, and the sub- measuring unit of third is respectively arranged with the 6th groove, two the 6th groove phases in two lateral surface The vertical centerline of measuring unit sub- for third is symmetrical, and the end of the 4th groove is each provided with a 5th vertical ditch Slot；The end contact of the side of each third supporting beam and the 6th trench contact, the other side and the 5th groove.

Preferably, the second groove includes second side and the first side that second side both ends are arranged in；Second side While being parallel to first groove, first side is perpendicular to second side；The side of each the second supporting beam and first groove contact, The contact of the end of the other side and a second side.

Preferably, the lower end of second supporting beam and the third supporting beam is bonded with glass plate.

Preferably, array is provided with several the second sensitive beams, one end of each the second sensitive beam in first groove The inner side edge of three mass blocks is fixedly connected, and the inner side edge of the other end and the 4th mass block is fixedly connected；

Array is provided with several third sensitive beams on 4th groove, each third sensitive beam one end and the 5th mass block Inner side edge be fixedly connected, the inner side edge of the other end and the 6th mass block is fixedly connected.

Preferably, the second sensitive beam quantity of the cross central line two sides of the second sub- measuring unit is equal, the measurement of third The third sensitive beam quantity of the cross central line two sides of unit is equal.

Preferably, X measuring unit is identical with the structure of Y measuring unit, two the first sub- measuring unit compositions of each freedom, often One the first sub- measuring unit includes the first mass block and the second mass block, the lateral surface of the first mass block and the second mass block Lateral surface is connected each by first supporting beam with chip outline border, and the medial surface of the first mass block and the second mass block passes through Hinge beam and the connection of the first sensitive beam.

Preferably, first supporting beam and hinge beam are respectively positioned on the center of the first sub- measuring unit transverse direction.

Preferably, there are two the first sensitive beams for the side setting of each hinge beam；Wherein close to two of hinge beam One sensitive beam is symmetrical relative to hinge beam, and two the first sensitive beams far from hinge beam are symmetrical relative to hinge beam；First is sensitive Varistor is provided on beam, the varistor in four the first sensitive beams is connected by the first metal lead wire, forms semi-loop Favour stone full-bridge circuit.

A kind of preparation of the above-mentioned three axis shock accelerometer chip of MEMS piezoresistive with purely axial deformation sensitive beam Method, comprising the following steps:

Step 1, two-sided thermal oxide is carried out to soi wafer, is respectively formed one layer of heat in the upper and lower surfaces of soi wafer The hot oxygen silicon dioxide layer of oxygen silicon dioxide layer, respectively upper layer and the hot oxygen silicon dioxide layer of bottom；

Step 2, the hot oxygen silica in upper layer in the lightly doped region of the front SOI is removed by reaction ionic etching method Layer after adulterating boron ion in lightly doped region, forms lightly doped district；

Step 3, it in one layer photoresist of the front surface coated of soi wafer, is then removed by reaction ionic etching method heavily doped The hot oxygen silicon dioxide layer in upper layer in miscellaneous region carries out heavy doping in heavily doped region, forms ohmic contact regions；

Step 4, one layer of deposition silica is formed using plasma reinforced chemical vapour deposition method in the front of SOI piece Layer, etch lead hole；Through physical vaporous deposition depositing Ti/Al layers in silicon dioxide layer, metal lead wire and weldering are made by lithography The structure of disk；

Step 5, the hot oxygen titanium dioxide of bottom in the movement clearance region of the SOI piece back side is removed by reaction ionic etching method Then silicon is etched in the back side movement clearance region of substrate silicon by inductively coupled plasma etching method in soi wafer Gap out；

Step 6, bottom is formed by the vapour deposition process of plasma enhanced chemical at the back side of the hot oxygen silica of bottom Layer silicon nitride layer；

Step 7, the underlying silicon nitride layer in back-etching region, the etched area are removed by reaction ionic etching method Domain is in movement clearance region；It is etched in etch areas by deep reaction ion etching method, is etched to buried oxide layer；Form branch Support the lower half portion of beam, hinge beam and all mass blocks；

Step 8, the hot oxygen silicon dioxide layer and deposition two in positive etch areas are removed by reaction ionic etching method Then silicon oxide layer is etched to buried oxide layer by inductively coupled plasma etching method, form supporting beam, hinge beam and all matter The top half of gauge block and the overall structure of sensitive beam；

Step 9, the SOI piece front for having etched completion is protected using photoresist, then utilizes buffer from the back side Buried oxide layer is etched, will be dried after the rinsing of SOI piece, removed positive photoresist, chip is made；

Step 10, photoetching glass metal region on a glass sputters Cr/Au layers on a glass later, step 9 is made On a glass by anode linkage, three axis of the MEMS piezoresistive impact with purely axial deformation sensitive beam adds the chip obtained The preparation of speedometer chip is completed.

Compared with prior art, the invention has the following advantages:

The invention discloses a kind of three axis shock accelerometer chip of MEMS piezoresistive with purely axial deformation sensitive beam, The chip includes tri- measuring unit groups of X, Y, Z, is respectively used for measuring the acceleration in three directions of x, y, z, it can be achieved that three sides To the separating and measuring of acceleration；The Z measuring unit, supporting beam are separated with sensitive beam, and supporting beam main function is support quality Block movement, and stress focuses primarily upon sensitive beam, so that the varistor resistance value in sensitive beam changes, the two respectively takes charge of it Duty greatly weakens the mutual restricting relation of sensitivity and resonance frequency, so that the sensitivity of sensor and resonance frequency are all There is large increase, improves the performance of sensor；When the acceleration by Z-direction, due to moving synchronously for two mass blocks, The sensitive beam both ends being secured to also move synchronously, so that sensitive beam meets purely axial deformation condition always, in identical resonance frequency Under rate, the sensitivity of sensor is optimal, so that the sensor chip has the performance indicator of good measurement acceleration, because The dynamic characteristic of this sensor is preferable.The separating and measuring of 100000g or less 3-axis acceleration may be implemented in the sensor chip； Its intrinsic frequency is greater than 1.1MHz, and X, Y and Z-direction sensitivity are all larger than 1.2 μ V/g/3V under the conditions of no amplification.The present invention is logical The structure for changing sensor chip is crossed, structure design is optimized, to meet the performance indicator of HI high impact, big pulsewidth load.

Further, the supporting beam position of two sub- measuring units in Z measuring unit is different, and one is located at son measurement list The middle position of member, another is located at the outside in sub- measuring unit, due to the difference of the position of supporting beam, when the second son measurement When the mass block of unit is rotated along inside, the mass block of the sub- measuring unit of third is rotated along outside；Therefore, two subelements is quick Sense beam is in opposite stress state, tension one compression, and then forms favour stone full-bridge, Lai Tigao output sensitivity.

Further, second groove is bending structure, guarantees the second supporting beam in the middle position of the second sub- measuring unit.

Further, the supporting beam of two measuring units of Z-direction is bonded to bottom glass plate by equal anode linkage technique, The rigidity for increasing entire sensor substantially increases the intrinsic frequency of sensor.

Further, quantity is arranged all in accordance with acceleration and chip in either the second sensitive beam or third sensitive beam Varistor resistance value setting, these sensitive beams are all satisfied purely axial deformation condition, to increase varistor resistance value, increase defeated Out；Sensitive beam length is longer, and intrinsic frequency is higher, but corresponding sensitivity can reduce, therefore the present invention is sensitive by increasing The quantity of beam, so that improving the sensitivity of sensitive beam while guaranteeing intrinsic frequency.

Further, two sub- measuring unit two sides sensitive beam quantity are equal, so that in the sensitivity for guaranteeing detection direction While, eliminate cross jamming caused by the deflection of mass block caused by sensor non-detection directional acceleration.

Further, X measuring unit and Y measuring unit equally include mass block, supporting beam and sensitive beam；Either which Measuring unit, supporting beam are separated with sensitive beam, supporting beam main function be support mass block movement, and stress focus primarily upon it is quick Feel beam so that the varistor resistance value in sensitive beam changes, Each performs its own functions for the two, greatly weaken sensitivity with it is humorous The mutual restricting relation of vibration frequency improves sensor so that the sensitivity of sensor and resonance frequency have large increase Performance；For X measuring unit or Y measuring unit, when the acceleration of acceleration or the direction y by the direction x, due to two mass Block moves synchronously, and the sensitive beam both ends being secured to also move synchronously, so that sensitive beam meets purely axial deformation condition always, Under identical resonance frequency, the sensitivity of sensor is optimal.

Further, supporting beam and hinge beam are respectively positioned on the center of the first sub- measuring unit, are guaranteeing detection direction Sensitivity while, eliminate sensor non-detection directional acceleration caused by mass block deflection caused by cross jamming；

Further, the first sensitive beam is symmetrical relative to hinge beam, due to meeting when by acceleration effect of two mass blocks It moves synchronously, so that the movement of the sensitive beam both ends being secured at any time is identical, either which unit, sensitive beam Movement is symmetrical both with respect to cross central line, so that the sensitive beam both ends length travel of cross central line two sides is on the contrary, lateral position It moves and offsets, and since sensitive beam is sufficiently fine, mass block bending in both ends is small to the moment of flexure of sensitive beam to that can ignore, thus sensitive beam Always meet the condition of purely axial deformation.

The invention also discloses a kind of three axis shock accelerometer core of MEMS piezoresistive with purely axial deformation sensitive beam The preparation method of piece, the preparation method introduce reactive ion etching, Both Plasma Chemical Vapor according to the design feature of the chip The methods of deposition, deep reaction ion etching technology, in the case where guaranteeing sensor shape precision, simplification of flowsheet is reduced Processing cost.

[Detailed description of the invention]

Fig. 1 is the positive schematic diagram of overall structure of the invention；

Fig. 2 is the schematic diagram at the overall structure back side of the invention；

Fig. 3 is the part the B-B ' amplification profile schematic diagram in Fig. 1；

Fig. 4 is the part the A-A ' amplification profile schematic diagram in Fig. 1；

Fig. 5 is the working principle plan view of the first sub- measuring unit 2-1；

Fig. 6 is the working principle plan view of the second sub- measuring unit 2-2 and the sub- measuring unit 2-3 of third；

Fig. 7 is the working principle perspective view of the first sub- measuring unit 2-1；

Fig. 8 is the working principle perspective view of the second sub- measuring unit 2-2 and the sub- measuring unit 2-3 of third；

Wherein, (a) figure is the sub- measuring unit of third；(b) figure is the second sub- measuring unit；

Fig. 9 is favour stone full-bridge working principle diagram；

Figure 10 is preparation process flow structural schematic diagram of the invention；

Wherein, (a) figure is step 1；(b) figure is step 2；(c) figure is step 3；(d) figure is step 4；(e) figure is step 5；(f) figure is step 6；(g) figure is step 7；(h) figure is step 8；(i) figure is step 9；(j) figure is step 10.

Figure 11 is preparation technology flow chart of the invention；

Wherein: 1- chip outline border；2- measuring unit；3- hinge beam；4- supporting beam；5- sensitive beam；6- metal lead wire；7- Glass plate；8- device layer；9- buried oxide layer；10- substrate silicon；The upper layer 11- thermal oxide silica；The hot oxygen silica of 12- bottom； 13- lightly doped district；14- photoresist；15- heavily doped region；16- silicon dioxide layer；17- pad；18- underlying silicon nitride layer；19- Cr/Au layers；The sub- measuring unit of 2-1- first；The sub- measuring unit of 2-2- second；The sub- measuring unit of 2-3- third；The first mass of 2-4- Block；The second mass of 2-5- is fast；2-6- third mass block；The 4th mass block of 2-7-；The 5th mass block of 2-8-；The 6th mass of 2-9- Block；The first supporting beam of 4-1-；The second supporting beam of 4-2-；4-3- third supporting beam；The first sensitive beam of 5-1-；5-2- second is sensitive Beam；5-3- third sensitive beam；The first metal lead wire of 6-1；The second metal lead wire of 6-2-；18-1- first groove；The second ditch of 18-2- Slot；The 4th groove of 18-4-；The 5th groove of 18-5-；The 6th groove of 18-6-；The first side 18-2-1-；The second side 18-2-2-.

[specific embodiment]

The invention will be described in further detail in the following with reference to the drawings and specific embodiments:

In the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", "vertical", The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, merely to Convenient for description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation, It is constructed and operated in a specific orientation, therefore is not considered as limiting the invention；Term " first ", " second ", " third " It is used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance；In addition, unless otherwise specific regulation and limit Fixed, term " installation ", " connected ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, be also possible to detachably connect It connects；It can be directly connected, the connection inside two elements can also be can be indirectly connected through an intermediary.For this For the those of ordinary skill in field, the concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.

The invention discloses a kind of three axis shock accelerometer chip of MEMS piezoresistive with purely axial deformation sensitive beam And preparation method thereof；The accelerometer chip includes the X measuring unit being arranged in chip outline border 1, Y measurement referring to Fig. 1 and Fig. 2 Unit and Z measuring unit, each measuring unit include two sub- measuring units 2, and the sub- measuring unit 2 includes that the first son is surveyed Measure unit 2-1, the second sub- measuring unit 2-2 and the sub- measuring unit 2-3 of third；The chip outline border 1 is bonded on glass plate 7, X Measuring unit is identical with four sub- 2 structures of measuring unit in Y measuring unit, is the first sub- measuring unit 2-1, and Z measurement is single The structure of two sub- measuring units in member is not identical, the respectively second sub- measuring unit 2-2 and the sub- measuring unit 2-3 of third. O-xyz coordinate system is established, wherein the long side of chip outline border 1 is parallel to x-axis, and the short side of chip outline border 1 is parallel to y-axis, entire core The plane of piece outline border 1 is parallel to xoy plane, and z-axis is perpendicular to xoy plane.

The vertical centerline of two the first sub- measuring unit 2-1 in X measuring unit is parallel to y-axis, in X measuring unit Two the first sub- measuring unit 2-1 are arranged in parallel along x-axis；Two the first sub- measuring unit 2-1 in Y measuring unit it is vertical in Heart line is parallel to x-axis, and two the first sub- measuring unit 2-1 in Y measuring unit are along x-axis arranged；In Z measuring unit The vertical centerline of two sub- measuring unit 2-2 and the sub- measuring unit 2-3 of third each parallel to x-axis, the second sub- measuring unit 2-2 and The sub- measuring unit 2-3 of third is arranged in parallel along y-axis.

Each sub- measuring unit 2 includes respective mass block, supporting beam and sensitive beam, three sub- measuring unit difference For measuring the acceleration in three directions of x, y, z；Each sub- measuring unit is fixedly connected with chip outline border 1, and each height is surveyed Amount unit does not contact between each other.

Referring to Fig. 3, the first sub- measuring unit 2-1 includes the first mass block 2-4 and the second mass block 2-5, the first matter The lateral surface of gauge block 2-4 and the second mass block 2-5 are connected with chip outline border 1 by the first supporting beam 4-1 respectively, and two first Beam 4-1 is supportted on the cross central line of the first sub- measuring unit 2-1, outside one end of each the first supporting beam 4-1 and chip Frame 1 is fixedly connected, and the other end and the first mass block 2-4's or the second mass block 2-5's lateral surface are fixedly connected；First mass block It is connected between 2-4 and the medial surface of the second mass block 2-5 by hinge beam 3, along vertical, the hinge beam 3 of the first measuring unit 2-1 Both ends be located at the center of the first mass block 2-4 and the second mass block 2-5；First mass block 2-4 and the second mass The distance between block 2-5 is the distance between first sensitive beam 5-1, and the two sides of hinge beam 3 are respectively set sensitive there are two first Beam 5-1, one end of each the first sensitive beam 5-1 are connected with the medial surface of the first mass block 2-4, the other end and the second mass block The medial surface of 2-5 connects；First sensitive beam 5-1 of setting 3 side of hinge beam includes the first sensitive beam 5-1 and the outside of inside First sensitive beam 5-1, the first sensitive beam 5-1 of two insides is symmetrical relative to hinge beam 3, the first sensitive beam 5- in two outsides 1 is symmetrical relative to hinge beam 3；It is fixedly installed independent varistor on each first sensitive beam 5-1, each first son is surveyed The varistor on four the first sensitive beam 5-1 on unit 2-1 is measured by the first metal lead wire 6-1 connection, forms semi-loop Favour stone full-bridge circuit；The first sensitive beam 5-1 is set as 4, but the setting quantity root of the first sensitive beam 5-1 altogether in the present embodiment The factually demand setting of border varistor, sensitive beam length is longer, and intrinsic frequency is higher, but corresponding sensitivity can reduce, Therefore the present invention passes through the quantity for increasing sensitive beam, so that improving the sensitivity of sensitive beam while guaranteeing intrinsic frequency； The first sensitive beam 5-1 be arranged in two mass blocks close to side portion because sensitive beam is at the center of mass block, Its sensitivity is lower.

Referring to fig. 4, the described second sub- measuring unit 2-2 includes the vertically symmetrical third mass block 2-6 in center and the Four mass block 2-7, the second subelement 2-2 are provided with first groove 18-1 along its vertical centerline, and first groove 18-1 is by third Mass block 2-6 and the 4th mass block 2-7 keep apart；There are two symmetrical relative to first groove 18-1 for setting on chip outline border 1 Second groove 18-2, a second groove 18-2 around third mass block 2-6 periphery setting, by third mass block 2-6 and Chip outline border 1 is isolated；Another second groove 18-2 around the 4th mass block 2-7 periphery setting, by the 4th mass block 2-7 and Chip outline border 1 is isolated；Second groove 18-2 is bending structure, including a two first side 18-2-1 and second side 18- 2-2, described two first side 18-2-1 are separately positioned on the both ends of second side 18-2-2, and equal and second side 18-2-2 Connection；Second side 18-2-2 is parallel to first groove 18-1, two first side 18-2-1 vertically with second side 18-2- 2；Two sides of third mass block 2-6 pass through the second supporting beam 4-2 respectively and are fixedly connected with chip outline border 1, the 4th mass block Two sides of 2-7 pass through the second supporting beam 4-2 respectively and are fixedly connected with chip outline border 1, and the two of each the second supporting beam 4-2 Side is respectively first side 18-2-1 and first groove 18-1；The second sub- same end measuring unit 2-2, third matter are set The second supporting beam 4-2 of gauge block 2-6 and the second supporting beam 4-2 of the 4th mass block 2-7, it is symmetrical relative to first groove 18-1； The second supporting beam 4-2 is bonded by anode linkage and glass plate 7；It is set between third mass block 2-6 and the 4th mass block 2-7 It is equipped with several second sensitive beams 5-2, the inner side edge of each second one end sensitive beam 5-2 and third mass block 2-6 are fixed to be connected It connects, the other end and the 4th mass block 2-7 inner side edge are fixedly connected, and the setting quantity of the second sensitive beam 5-2 is relative to transverse center Line is symmetrical.

Referring to fig. 4, the sub- measuring unit 2-3 of the third includes the vertically symmetrical 5th mass block 2-8 in center and the Six mass block 2-9, the sub- measuring unit 2-3 of third are provided with the 4th groove 18-4 along its vertical centerline, and the 4th groove 18-4 is set It sets between the medial surface of the 5th mass block 2-8 and the medial surface of the 6th mass block 2-9, by the 5th mass block 2-8 and the 6th matter Gauge block 2-9 isolation；The both ends of 4th groove 18-4 are respectively connected with a 5th groove 18-5, and the 5th groove 18-5 is vertical Communicated in the 4th groove 18-4, the 5th groove 18-5 and the 4th groove 18-4, each the 5th groove 18-5 and the 5th mass A side of block 2-8 and a contact aside of the 6th mass block 2-9, a 4th groove 18-4 and two the 5th grooves 18-5 collectively constitutes the structure of a " I " fonts；6th groove 18-6 there are two being opened up on the sub- measuring unit 2-3 of third, one The lateral surface of the 5th mass block 2-8 is arranged in 6th groove 18-6, and a 6th groove 18-6 is arranged in the 6th mass block 2-9's Lateral surface；Two the 6th groove 18-6 are each parallel to the 4th groove 18-4；For the 5th mass block 2-8 or the 6th mass block 2-9, Separated by a 6th groove 18-6 and two the 5th groove 18-5 with chip outline border 1；Two sides of 5th mass block 2-8 Side passes through third supporting beam 4-3 respectively and chip outline border 1 connects, and two sides of the 6th mass block 2-9 pass through third branch respectively It supports beam 4-3 and chip outline border 1 connects；One end of each third supporting beam 4-3 and chip outline border 1 connect, the other end and the 5th The side of mass block 2-8 or the side of the 6th mass block 2-9 connection, two sides of each third supporting beam 4-3 respectively and 4th groove 18-4 and the 6th groove 18-6 contact；The third supporting beam 4-3 passes through anode linkage and glass plate 7 is bonded； It is provided with third sensitive beam 5-3 between 5th mass block 2-8 and the 6th mass block 2-9, one end of each third sensitive beam 5-3 It is fixedly connected with the medial surface of the 5th mass block 2-8, the medial surface of the other end and the 6th mass block 2-9 are fixedly connected.Each Third one end sensitive beam 5-3 is fixedly connected with the inner side edge of the 5th mass block 2-8, the other end and the 6th mass block 2-9 inner side edge It is fixedly connected, the setting quantity of third sensitive beam 5-3 is symmetrical relative to cross central line.

Referring to figs. 5 and 6, according to the total resistance value of varistor and space in the present invention, the second sensitive beam 5-2 and third are sensitive Each setting 6 of beam 5-3, because being each provided with a pressure-sensitive electricity on each second sensitive beam 5-2 or third sensitive beam 5-3 Resistance, therefore every side of i.e. cross central line is each provided with 3 varistors, the arrangement make sub- measuring unit by The mode of texturing of the second sensitive beam 5-2 and third sensitive beam 5-3 are purely axial deformation, the purely axial change when z directional acceleration Shape is to deform along the length direction of sensitive beam；It is close with the mentality of designing of the first sensitive beam 5-1, the second sensitive beam 5-2 and The setting quantity of three sensitive beam 5-3 is set according to the demand of practical varistor, and sensitive beam length is longer, and intrinsic frequency is higher, But corresponding sensitivity can reduce, therefore the present invention passes through the quantity for increasing sensitive beam, so that guaranteeing the same of intrinsic frequency When, improve the sensitivity of sensitive beam；Because Z measuring unit is used to measure the acceleration in the direction z, there is no need to third is sensitive Beam 5-3 is arranged in side portion, but centrally disposed place, to improve the susceptibility of measurement；Pressure-sensitive electricity on second sensitive beam 5-2 Resistance is connected with the varistor on third sensitive beam 5-3 by the second metal lead wire 6-2, and favour stone full-bridge is formed.

As can be seen from the above description, for the second sub- measuring unit 2-2 and the sub- measuring unit 2-3 of third in Z measuring unit, The middle position of the second sub- measuring unit 2-2 transverse direction is arranged in four the second supporting beam 4-2 in second sub- measuring unit 2-2, The inside face contact of equal and third mass block 2-6 medial surface or the 4th mass block 2-7, but in the sub- measuring unit 2-3 of third Four third supporting beam 4-3 the edge position of the measuring unit 2-3 transverse direction of third is set, and the 5th mass block 2-8 The outside face contact of lateral surface or the 6th mass block 2-9；As shown in Figure 6 and Figure 8, in two sub- measuring units supporting beam arrangement Position is different, and due to the difference of the position of supporting beam, when the mass block of the second sub- measuring unit 2-2 is rotated along inside, third is sub The mass block of measuring unit 2-3 is rotated along outside；Therefore, the sensitive beam of two subelements is in opposite stress state, and one Tension one compression, and then form favour stone full-bridge；Second sensitive beam 5-2 as shown in Figure 9 has six altogether, and three are one group, altogether Two groups, the R1 and R3 in Fig. 9 are respectively corresponded,；Similarly, third sensitive beam 5-3 totally six, three are one group, totally two groups, right respectively Answer the R2 and R4 in Fig. 9, such second sensitive beam 5-2 and third sensitive beam 5-3 just pass through conducting wire be connected as it is shown in Fig. 9 half-open Ring favour stone full-bridge circuit, Lai Tigao output sensitivity.

As shown in Figure 5-Figure 8, either X measuring unit, Y measuring unit or Z measuring unit, in each measuring unit Two mass blocks can be moved synchronously when by acceleration effect so that the sensitive beam both ends that are secured to are at any time Move identical, the length travel of sensitive beam both ends is on the contrary, lateral displacement is offset, and since sensitive beam is sufficiently fine, both ends mass block is curved Song is small to the moment of flexure of sensitive beam to that can ignore, so that sensitive beam meets the condition of purely axial deformation always；Referring to Fig. 5 and Fig. 7, For X measuring unit, when by acceleration in the x-direction, the first sensitive beam 5-1 of 3 two sides of hinge beam, one is extruded, One is stretched, and lateral displacement is offset, and the varistor in two the first sub- measuring unit 2-1 in sensitive beam passes through metal lead wire Connection forms favour stone full-bridge, carries out the measurement of acceleration；Similarly for Y measuring unit.

Since sensitive beam meets purely axial deformation condition always, therefore multiple groups sensitive beam can be added between two mass blocks, It requires to be configured according to actual resistance value, these sensitive beams are all satisfied purely axial deformation condition, to increase varistor resistance Value increases output；But for X measuring unit and Y measuring unit, for sensitive beam closer to hinge beam, susceptibility is lower, therefore quick The setting for feeling beam needs at outer side edges.

In the present embodiment,

The overall dimension of sensor chip are as follows: 410 μm of 3600 μ m of length × width x thickness=4800 μ m；

X, in Y measuring unit the first supporting beam 4-1 size are as follows: 405 μm of 150 μ m of length × width x thickness=520 μ m；

The size of second supporting beam 4-2 in second sub- measuring unit 2-2 are as follows: length × width x thickness=1050 μ m, 150 μ m 410μm；

The size of third supporting beam 4-3 in the sub- measuring unit 2-3 of third are as follows: length × width x thickness=1050 μ m, 160 μ m 410μm；

X, in Y measuring unit hinge beam 3 size are as follows: 405 μm of 50 μ m of length × width x thickness=150 μ m；

X, the size of sensitive beam is equal in Y, Z measuring unit are as follows: 5 μm of 10 μ m of length × width x thickness=70 μ m；

X, the first mass block 2-4 and the second mass block 2-5 size in Y measuring unit are as follows: length × width x thickness=900 μ ms 350μm×405μm；

The size of third mass block 2-6 and the 4th mass block 2-7 in second sub- measuring unit 2-2 are as follows: length × width x thickness= 950μm×450μm×405μm；

The size of 5th mass block 2-8 and the 6th mass block 2-9 in the sub- measuring unit 2-3 of third are as follows: length × width x thickness= 950μm×450μm×405μm。

The technical indicator that chip in the embodiment can reach is as follows:

1, range: 100~100000g (3-axis acceleration)；

2, sensitivity: >=1.2 μ V/g/3V；

3, intrinsic frequency: >=1.1MHz；

4, operating temperature: -35 DEG C~130 DEG C；

From These parameters as can be seen that the sensor is suitable for the measurement range that range is 100~100000g, can survey Broad quantum, and sensitivity and intrinsic frequency are higher by general sensor.

The working principle of the sensor chip are as follows:

Referring to Figure 5, it can be obtained by Newton's second law F=ma, when acceleration of the sensor chip by X-direction in face a_xWhen effect, the mass block in two the first sub- measuring unit 2-1 in X measuring unit is moved due to inertia and in generating surface, Cause the deformation of the first supporting beam 1, so as to cause the deformation of the first sensitive beam 5-1, according to the piezoresistive effect of silicon, the first sensitive beam Change in resistance occurs under stress for the varistor on 5-1, and the relationship between resistance varying-ratio and its suffered stress is such as Under:

Wherein: R is the initial resistance value of varistor；

π is the piezoresistance coefficient of varistor；

σ is the stress of varistor；

Δ R is the change in resistance of varistor.

At this point, the semi-loop favour stone full-bridge disequilibrium that four varistors on same operative orientation are constituted, output With external acceleration a_xDirectly proportional electric signal realizes the detection to acceleration.The sensitivity S and external acceleration a of sensor_x Relationship such as following formula:

Wherein: U_outFor the output voltage of Wheatstone bridge；

E is the Young's modulus of silicon；

π is piezoresistance coefficient；

U_applyFor the supply voltage of Wheatstone bridge；

ε is the strain of the micro- beam of pressure drag；

π₄₄For Shearing piezoresistance coefficient；

L is the length of sensitive beam；

The axial deformation of Δ l --- sensitive beam；

As acceleration a of the sensor chip by Y-direction in face_yWhen effect, two the firstth in Y measuring unit at this time The first mass block 2-4 and the second mass block 2-5 in sub- measuring unit 2-1 are moved due to inertia and in generating surface, sensor core The working principle and sensitivity computing method and the sensor chip of piece are by acceleration a_xShi Xiangtong, which is not described herein again.

Referring to Fig. 6, the working principle of the working principle and X, Y-axis of Z axis is essentially identical, except that when being added by Z axis When speed, since the position of supporting beam in the second sub- measuring unit 2-2 and sub- measuring unit 2-3 of third is different, the second son measurement The mass block of unit 2-2 is rotated along inside, and the sub- measuring unit 2-3 of third is rotated along outside.Therefore, the sensitive beam of two subelements In opposite stress state, one tension one is pressurized and then forms favour stone full-bridge, to be exported.

Referring to Figure 10 and Figure 11, wherein the step in the alphabetical corresponding diagram 10 in Figure 11 Block Diagrams is marked, the system of the chip Preparation Method, including following procedure:

Step 1, referring to (a) figure in Figure 10, using N-type (100) crystal face twin polishing soi wafer, the silicon wafer is under To including the substrate silicon 10, buried oxide layer 9 and the device layer 8 that stack gradually, substrate silicon 10 with a thickness of 400 μm, the thickness of buried oxide layer 9 Be 1 μm, device layer 8 with a thickness of 10 μm, silicon wafer overall thickness is 411 μm；Using HF acid solution clean soi wafer, 900 DEG C- Two-sided oxidation is carried out at 1200 DEG C, the hot oxygen silicon dioxide layer 12 of bottom is formed in the lower part of substrate silicon 10, on the top of device layer 8 Form the hot oxygen silicon dioxide layer 11 in upper layer.

Step 2, referring to (b) figure in Figure 10, first time photoetching patterns the hot oxygen silicon dioxide layer 11 in front, using anti- Answer the hot oxygen silicon dioxide layer 11 in ion(ic) etching (RIE) technique removal front lightly doped region, the hot oxygen dioxy in remaining region SiClx layer 11 serves as mask；The hot oxygen silicon dioxide layer 11 in front at patterning carries out boron ion and is lightly doped, and doping depth is 1.5 μm, form lightly doped district 13；The trap redistributed again pushes away diffusion annealing process, and the impurity to guarantee lightly doped district 13 is dense Degree is uniformly distributed；The lightly doped district 13 is the varistor in sensitive beam 5.

Step 3, referring to (c) figure in Figure 10, in one layer photoresist 14 of soi wafer front surface coated, it is therefore intended that protection is light Doped region is unaffected in next heavy doping step, then carries out second of photoetching and removes soi wafer front weight Then hot oxygen silicon dioxide layer 11 and photoresist 14 in doped region carry out boron ion heavy doping, form ohm of low resistance Contact zone 15, and redistribution diffusion annealing process is carried out, so that the impurity concentration of ohmic contact regions 15 is uniformly distributed, to guarantee it It is formed and is steadily contacted between the lightly doped district 13 on plain conductor 6 and sensitive beam 5 afterwards；

Step 4, referring to (d) figure in Figure 10, plasma reinforced chemical vapour deposition (Plasma is used in SOI piece front Enhanced Chemical Vapor Deposition, PECVD) technique one layer of deposited silicon dioxide layer 16, Zhi Hou of formation Third photo etching, etch lead hole, Ti/Al layers of whole surface physical vapour deposition (PVD) (PVD) later, then fourth lithography utilizes gold The metal layer for belonging to pad and other outer regions of conducting wire carving ablation metal conducting wire, forms the structure of metal lead wire 6 and pad 17, and 30 minutes alloying process are carried out under the conditions of 500 DEG C.

Step 5, referring to (e) figure in Figure 10, the 5th photoetching and reactive ion etching (RIE) technique removal SOI piece back The hot oxygen silica 12 of bottom in the movement clearance region of face, the hot oxygen silica 12 of the bottom in remaining region serve as exposure mask, so 5 μm of gap is prepared, by inductively coupled plasma body (ICP) lithographic technique in substrate silicon 10 afterwards to guarantee that acceleration passes Sensor proper motion in the operating condition.

Step 6, referring to (f) figure in Figure 10, the vapour deposition process of plasma enhanced chemical is used at the SOI piece back side (PECVD) technique forms underlying silicon nitride layer 18, the mask layer as following back-etching.

Step 7, referring to (g) figure in Figure 10, the 6th photoetching in SOI piece photoetching back-etching region, using reaction from Silicon nitride layer 18 in son etching (RIE) technique removal back-etching region, the silicon nitride layer 18 in remaining region are used as exposure mask, In In order to guarantee, molding supporting beam 4, hinge beam 3 and mass block 2 have good edge vertical in next etch step Degree and depth-to-width ratio, are carved here with deep reaction ion etching technology (Deep Reactive Ion Etching, DRIE) Erosion, until being etched to the stopping of buried oxide layer 9；The lower half portion of supporting beam 4, hinge beam 3 and all mass blocks is formed by the step.

Step 8, referring to (h) figure in Figure 10, the 7th photoetching is in SOI piece front photoetching front etch areas, using anti- Ion(ic) etching (RIE) technique is answered to remove hot oxygen silicon dioxide layer 11 and deposited silicon dioxide layer 16 in positive etch areas.So It is etched to buried oxide layer 9 using inductive couple plasma (Inductively Coupled Plasma, ICP) lithographic technique afterwards and stops Only, supporting beam 4, the top half of hinge beam 3 and mass block 2 are formed, the overall structure of sensitive beam 5 is formed.

Step 9, referring to (i) figure in Figure 10, the SOI piece front for having etched completion is protected using photoresist, so It is utilized respectively naturally dry after deionized water is rinsed with acetone, finally from back-etching buried oxide layer 9 using buffer HF afterwards Positive photoresist is removed again.

Step 10, referring to (j) figure in Figure 10, in 7 glazing carved glass metallic region of glass plate, later on glass plate 7 Cr/Au layer 19 is sputtered, to prevent Electrostatic Absorption；Finally by anode linkage by chip package on glass plate 7；Glass is BF33 glass, with a thickness of 500 μm.

This project is directed to the attitude measurement demand of high speed Penetrator Weapon, carries out grinding about novel sensing and measuring technique Study carefully.Target develops a kind of novel height for meeting superelevation load impacting signal measurement requirement suitable for high-elastic fast Penetrator Weapon Three axis jerk acceleration transducer of performance MEMS (Micro Electro-Mechanical Systems) pressure resistance type is invaded with improving The adaptive initiation control ability of thorough multilayer hard goal fuse and function reliability.Its key technology utilizes separation function structure Method designs the detection structure and support construction of three axis jerk acceleration transducer of MEMS piezoresistive, theory analysis detection structure With the relevant parameter of support construction to guarantee that detection structure generates maximum strain energy, purely axial deformation based on detection structure and The high rigidity of support construction, to make sensor while have the characteristics that highly sensitive and high natural frequency.

The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention Within mind and principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.