阅读说明：本技术 集成式led发光器件及其制备方法 (Integrated LED light-emitting device and preparation method thereof ) 是由 李玉元 杨皓宇 洪国展 陈锦庆 万喜红 李昇哲 雷玉厚 于 2021-08-05 设计创作，主要内容包括：本发明涉及固态半导体照明技术领域,提供一种集成式LED发光器件,包括合成基板、若干芯片、封装层、正极链接端子和负极链接端子。合成基板包括依序堆叠的第一基板、第二基板、第三基板以及第四基板,第三基板具有第一开口,第四基板具有第二开口。若干个芯片间隔设置在第三基板上,且位于第二开口内。封装层包覆若干个芯片。正极链接端子电性连接于若干个芯片的正极；负极链接端子电性连接于若干个芯片的负极。借此,可实现一体式全自动化作业,可以简化制程,节约成本。(The invention relates to the technical field of solid semiconductor lighting, and provides an integrated LED light-emitting device which comprises a synthetic substrate, a plurality of chips, a packaging layer, a positive electrode connecting terminal and a negative electrode connecting terminal. The composite substrate includes a first substrate, a second substrate, a third substrate and a fourth substrate stacked in sequence, the third substrate has a first opening, and the fourth substrate has a second opening. The plurality of chips are arranged on the third substrate at intervals and are positioned in the second opening. The packaging layer covers a plurality of chips. The positive electrode link terminal is electrically connected with the positive electrodes of the chips; the negative electrode linking terminal is electrically connected to the negative electrodes of the chips. Therefore, the integrated full-automatic operation can be realized, the manufacturing process can be simplified, and the cost is saved.)

1. An integrated LED light device, comprising:

a composite substrate including a first substrate, a second substrate, a third substrate and a fourth substrate stacked in sequence, the third substrate having a first opening, the fourth substrate having a second opening;

the chips are arranged on the third substrate at intervals and are positioned in the second openings;

the packaging layer coats the plurality of chips;

the positive electrode linking terminal is electrically connected to the positive electrodes of the chips; and

and the negative electrode linking terminal is electrically connected with the negative electrodes of the chips.

2. The integrated LED lighting device of claim 1, wherein: the first substrate is a glass substrate, the second substrate is a reflective substrate, the third substrate is a metal substrate, and the fourth substrate is a protective substrate.

3. The integrated LED lighting device of claim 2, wherein: the third substrate comprises a positive metal substrate and a negative metal substrate, the first opening is formed between the positive metal substrate and the negative metal substrate, the positive electrode of the chip is electrically connected with the positive metal substrate, and the negative electrode of the chip is electrically connected with the negative metal substrate.

4. The integrated LED lighting device as set forth in any one of claims 1-3, wherein: the first substrate has a size ranging from 1cm x 1cm to 40cm x 40cm, the second substrate has a thickness ranging from 10 μm to 200 μm, the third substrate has a thickness ranging from 10 μm to 100 μm, and the fourth substrate has a thickness ranging from 10 μm to 100 μm.

5. The integrated LED lighting device of claim 1, wherein: the distance range between the chips is 30 mu m-5cm, and the distance range between the anode and the cathode of each chip is 10 mu m-1 mm.

6. The integrated LED lighting device of claim 1, wherein: the molding angle range of the packaging layer is 15-170 degrees, and the thickness of the packaging layer is 40-10 mm higher than that of the chip.

7. The integrated LED lighting device of claim 1, wherein: the width of the first opening is greater than 30 μm.

8. The integrated LED lighting device of claim 1, wherein: the integrated LED light-emitting device further comprises a bonding layer arranged between the chip and the third substrate.

9. The integrated LED lighting device of claim 8, wherein: the bonding layer has a thickness in the range of 1 μm to 10 μm.

10. A preparation method of an integrated LED light-emitting device is characterized by comprising the following steps: the preparation method comprises the following steps:

providing a composite substrate, wherein the composite substrate comprises a first substrate, a second substrate, a third substrate and a fourth substrate which are sequentially stacked, the third substrate is provided with a first opening, and the fourth substrate is provided with a second opening;

fixing a bonding layer on the third substrate, wherein the bonding layer is positioned in the second opening;

fixing a plurality of chips on the bonding layer;

electrically connecting the positive electrode connecting terminal with the positive electrodes of the chips;

electrically connecting a negative electrode connecting terminal with the negative electrodes of the chips; and

and carrying out dispensing packaging treatment on the plurality of chips.

Technical Field

The invention relates to the technical field of solid semiconductor lighting, in particular to an integrated LED light-emitting device and a preparation method thereof.

Background

The LED light source has the advantages of energy saving, durability, no pollution, etc., and has been widely used in the fields of illumination, display, backlight source, etc., and has attracted much attention as a next-generation illumination mode with clear advantages. Based on the characteristics of long service life, high efficiency, high light utilization rate and the like of the LED, the LED illumination is widely applied to daily illumination. But the use process also encounters a plurality of technical problems, so that a plurality of people also make a plurality of research and improvement on the packaging mode of the LED,

at present, the LED lighting source is packaged by matching several processes and methods, and after the packaging is finished, the LED lighting source needs to be sent to manufacturers of downstream lighting, backlight and the like for chip mounting operation, and then the LED lighting source is assembled after the chip mounting operation is finished. The whole process is too complicated, consumes a large amount of manpower and material resources and has higher cost. In addition, the conventional work method has problems in reliability, safety, and the like.

Therefore, how to reasonably integrate and use resources under various different conditions is a technical problem to be solved by those skilled in the art.

Therefore, the present invention is directed to an integrated LED light emitting device and a method for manufacturing the same to solve the above problems.

Disclosure of Invention

In order to solve the problems of complicated preparation process, low cost and the like in the prior art, the invention provides an integrated LED light-emitting device and a preparation method thereof, which realize integrated full-automatic operation, simplify the manufacturing process and save the cost.

The invention provides an integrated LED light-emitting device which comprises a synthetic substrate, a plurality of chips, a packaging layer, a positive electrode connecting terminal and a negative electrode connecting terminal.

The composite substrate includes a first substrate, a second substrate, a third substrate and a fourth substrate stacked in sequence, the third substrate has a first opening, and the fourth substrate has a second opening. The plurality of chips are arranged on the third substrate at intervals and are positioned in the second opening. The packaging layer covers a plurality of chips. And the positive electrode linking terminal is electrically connected to the positive electrodes of the chips. And the negative electrode linking terminal is electrically connected to the negative electrodes of the chips.

In an embodiment, the first substrate is a glass substrate, the second substrate is a reflective substrate, the third substrate is a metal substrate and includes a positive metal substrate and a negative metal substrate, the first opening is formed between the positive metal substrate and the negative metal substrate, the positive electrode of the chip is electrically connected to the positive metal substrate, the negative electrode of the chip is electrically connected to the negative metal substrate, and the fourth substrate is a protective substrate.

In one embodiment, the first substrate has a size in a range of 1cm by 1cm to 40cm by 40cm, the second substrate has a thickness in a range of 10 μm to 200 μm, the third substrate has a thickness in a range of 10 μm to 100 μm, and the fourth substrate has a thickness in a range of 10 μm to 100 μm.

In one embodiment, the distance between the plurality of chips ranges from 30 μm to 5cm, and the distance between the anode and the cathode of each chip ranges from 10 μm to 1 mm.

In one embodiment, the molding angle of the packaging layer ranges from 15 degrees to 170 degrees, and the thickness of the packaging layer is 40 μm to 10mm higher than that of the chip.

In one embodiment, the width of the first opening is greater than 30 μm.

In one embodiment, the integrated LED light emitting device further includes a bonding layer disposed between the chip and the third substrate.

In one embodiment, the bonding layer has a thickness in a range of 1 μm to 10 μm.

The invention also provides a preparation method of the integrated LED luminescent device, which comprises the following steps: providing a composite substrate, wherein the composite substrate comprises a first substrate, a second substrate, a third substrate and a fourth substrate which are sequentially stacked, the third substrate is provided with a first opening, and the fourth substrate is provided with a second opening; fixing a bonding layer on the third substrate, wherein the bonding layer is positioned in the second opening; fixing a plurality of chips on the bonding layer; electrically connecting the positive electrode connecting terminal with the positive electrodes of the chips; electrically connecting a negative electrode connecting terminal with the negative electrodes of the chips; and carrying out dispensing packaging treatment on the plurality of chips.

Based on the above, compared with the prior art, the integrated LED light-emitting device and the preparation method thereof provided by the invention have the advantages that the integrated full-automatic operation is realized, the manufacturing process can be simplified, and the cost is saved.

Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts; in the following description, the drawings are illustrated in a schematic view, and the drawings are not intended to limit the present invention.

FIG. 1 is a schematic flow chart of a method for manufacturing an integrated LED light emitting device according to the present invention;

FIG. 2 is a schematic view of a production line of the method for manufacturing an integrated LED light emitting device according to the present invention;

FIG. 3 is a schematic diagram of an integrated LED light device according to the present invention; and

fig. 4 is a schematic structural diagram of the integrated LED lighting device with the support plate according to the present invention.

Reference numerals:

10-integrated LED light emitting device 12 composite substrate 121 first substrate

122 second substrate 123 third substrate 124 fourth substrate

125 first opening 126 second opening 14 chip

16 encapsulation layer 18 positive link terminal 20 negative link terminal

21IC terminal 22 bonding layer 24 mounting hole

26 supporting plate 50 brushing equipment 60 die bonding equipment

70 high temperature reflow soldering apparatus 80 fixing apparatus 90 low temperature reflow soldering apparatus

Width of support plate with diameter W1 of installation hole of 100 dispensing equipment D1

Molding angle of alpha encapsulation layer

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments; the technical features designed in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other; all other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the description of the present invention, it is to be understood that the terms "center", "lateral", "up", "down", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations and positional relationships based on those shown in the drawings, are only for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or component in question must have a particular orientation or be constructed and operated in a particular orientation, and therefore, should not be taken as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified. In addition, the term "comprises" and any variations thereof mean "including at least".

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integrally formed connection; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, and the two components can be communicated with each other. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

Referring to fig. 1 and 2, fig. 1 is a schematic flow chart of a method for manufacturing an integrated LED light emitting device according to the present invention, and fig. 2 is a schematic production line of the method for manufacturing an integrated LED light emitting device according to the present invention. To achieve at least one of the advantages or other advantages, an embodiment of the present invention provides a method for manufacturing an integrated LED light emitting device. As shown in the drawing, the method for manufacturing the integrated LED light emitting device includes the steps of:

s100: providing a synthetic substrate;

s200: fixing the bonding layer on the synthetic substrate;

s300: fixing a plurality of chips on the bonding layer;

s400: electrically connecting the positive electrode connecting terminal with the positive electrodes of the chips;

s500: electrically connecting the negative electrode connecting terminal with the negative electrodes of the chips;

s600: and carrying out dispensing packaging treatment on the plurality of chips.

In step S100, a composite substrate is provided, which includes a first substrate, a second substrate, a third substrate and a fourth substrate stacked in sequence from bottom to top. The first substrate mainly plays a role in supporting the whole and heat dissipation of a device, the second substrate mainly plays a role in protecting the attachment of the third substrate and the light emitted downwards by the reflection chip, the third substrate mainly plays a role in conducting a circuit, and the fourth substrate mainly plays a role in protecting the third substrate from being influenced by external factors and reflecting the light emitted from the side face of the chip. The third substrate is provided with a first opening which is used as a spacer of the anode and the cathode to avoid short circuit of the circuit. The fourth substrate has a second opening to accommodate the chip and the bonding layer.

In one embodiment, the first substrate is a glass substrate, which has excellent heat dissipation and support capabilities; the second substrate is a light-reflecting substrate, such as an acrylic substrate; the third substrate is a metal substrate, for example, a copper-clad substrate, an alloy substrate, or the like; the fourth substrate is a protective substrate, for example, a white oil reflective substrate or the like. The third substrate includes a positive metal substrate and a negative metal substrate, and a first opening is formed between the positive metal substrate and the negative metal substrate so as to be electrically isolated from each other. The positive electrode of the chip is electrically connected with the positive metal substrate, and the negative electrode of the chip is electrically connected with the negative metal substrate. Further, the preparation step of the synthetic substrate may be: firstly, polishing a glass substrate; electroplating or painting a reflective layer on the surface of the glass substrate for multiple times to form a reflective substrate; then, forming a copper-coated substrate on the reflecting layer, wherein the reflecting layer can also play a role in bonding the glass substrate and the copper-coated substrate; and then brushing a white oil reflecting layer on the surface of the copper-coated substrate to form a white oil reflecting substrate.

In one embodiment, the size of the first substrate ranges from 1cm by 1cm to 40cm by 40cm, and the size ranges refer to the ranges of length and width, and the length and width may be different. The second substrate has a thickness in the range of 10 μm to 200 μm, the third substrate has a thickness in the range of 10 μm to 100 μm, and the fourth substrate has a thickness in the range of 10 μm to 100 μm. In one embodiment, the width of the first opening is greater than 30 μm to provide better electrical isolation. In one embodiment, two opposite sides of the composite substrate are respectively provided with a mounting hole to facilitate mounting, the diameter of the mounting hole is larger than 1mm, and the number of the mounting holes can be correspondingly adjusted according to the size of the composite substrate.

In step S200, a bonding layer is fixed on the third substrate and located in the second opening of the fourth substrate by using the squeegee 50 shown in fig. 2, and the bonding layer is used to reinforce the connection between the chip and the third substrate. In an embodiment, the bonding layer may be formed by a flux, the thickness of the flux before curing is 5 μm to 20 μm, and the thickness of the flux after curing is 1 μm to 10 μm, i.e. the thickness of the bonding layer is in a range of 1 μm to 10 μm. The bonding layer may also be formed of other materials such as solder paste, solder paste and flux mix, etc.

In step S300, the die bonding apparatus 60 in fig. 2 is used to fix the chip on the bonding layer, and the die bonding apparatus 60 can effectively fix the chip at the predetermined position. Further, a high-temperature reflow soldering device 70 can be used to volatilize part of the soldering flux at high temperature, so as to strengthen the connection between the chip and the third substrate, and complete the circuit series design. In one embodiment, the spacing between the chips is controlled to be 30 μm-5cm, the spacing range between the anode and the cathode of each chip is 10 μm-1mm, and the size of the composite substrate and the number of the chips can be adjusted. The chip can be a light emitting chip of blue light or other monochromatic light, and can also be a light emitting chip of R, G, B three colors or other mixed multiple colors.

In steps S400 and S500, the fixing device 80 in fig. 2 is used to fix the positive link terminal and the negative link terminal on the composite substrate, and to communicate the positive link terminal with the positive electrode of the chip and the negative link terminal with the negative electrode of the chip through the third substrate. Further, other control devices such as an IC may be fixed to the composite substrate by the fixing device 80. Subsequently, the low temperature reflow apparatus 90 can be used to strengthen and fix the positive electrode link terminal, the negative electrode link terminal, the IC and other control devices, and it should be noted that the melting point of the solder paste is lower than that of the chip to avoid the secondary dissolution and movement of the chip. IC and other controlling means can be used for controlling the illumination and the closure of each return circuit lamp pearl, reach the demonstration and require the effect.

In step S600, the dispensing apparatus 100 in fig. 2 is used to perform dispensing and sealing on the chip to form a package layer, so as to achieve a predetermined light-emitting angle or color temperature and protect the chip. In one embodiment, the molding angle of the packaging layer is controlled within 15-170 degrees, and the thickness of the packaging layer is 40-10 mm higher than that of the chip, so that the light condensation effect is improved. The distance from the bottom of the packaging layer to the top of the packaging layer is controlled to be 1mm-3mm, and the width of the packaging layer is controlled to be 1mm-3 mm.

In one embodiment, the support plates are disposed on two sides of the composite substrate, the width of the support plates is 2mm-20mm, so as to facilitate transportation of the substrate, and after the dispensing and sealing operations are completed, the support plates can be cut off by using a cutting device, and portions required by users are reserved.

Further, other devices can be added according to actual requirements to meet the use requirements, for example: if the surface of the synthetic substrate is dirty, a cleaning device may be added before the brushing device 50 to clean the synthetic substrate; an image inspection device can be added, and after the operation of the brushing device 50 is completed, the image inspection device is used for inspecting whether the bonding layer is uniformly coated; appearance inspection equipment can be added, after the die bonder 60 finishes operation, the appearance inspection equipment is used for inspecting the bonding tightness of the chip and the synthetic substrate, checking whether the chip has abnormal conditions such as distortion or error, if so, carrying out system recording, subsequently handing over to repair equipment, sharing data of the repair equipment and the appearance inspection equipment, removing the chip and the bonding layer of the product marked with the abnormal conditions, and then re-dotting solder paste/soldering flux and the chip for repair; the lighting test equipment can be additionally arranged, and after the product is manufactured, the product can be subjected to lighting test to confirm whether the product meets the requirements of customers; automatic packaging equipment can be additionally arranged, the finished product is correspondingly packaged and then delivered to the client, and the use requirement is met.

In addition, the devices can be linked through the linking table, and the linking table can convey the object finished by the equipment on the table to the equipment used in the next process, so that the automatic transmission between the equipment is finished. Through mutual collocation of the devices and optimization of the preparation method, an integrated full-automatic operation mode is finally formed, a complete integrated LED light-emitting device is obtained, the aims of industrial integration, product miniaturization and the like are fulfilled, and manpower and material resources are saved.

Referring to fig. 3, fig. 3 is a schematic structural diagram of the integrated LED lighting device 10 according to the present invention. To achieve at least one of the advantages or other advantages, another embodiment of the present invention further provides an integrated LED light emitting device 10. The integrated LED light emitting device 10 may be manufactured according to the manufacturing method of any of the above embodiments. As shown in fig. 3, the integrated LED light emitting device 10 includes a composite substrate 12, a number of chips 14, an encapsulation layer 16, a positive link terminal 18, and a negative link terminal 20.

The composite substrate 12 includes a first substrate 121, a second substrate 122, a third substrate 123 and a fourth substrate 124 stacked in sequence. The third substrate 123 has a first opening 125 to ensure circuit design; the fourth substrate 124 has a second opening 126 to receive the chip 14.

A plurality of chips 14 are disposed on the third substrate 123 at intervals and located in the second opening 126. The chip 14 may cover the first opening 125 to prevent air from entering. The spacing between the chips 14 may be in the range of 30 μm to 5cm, and the spacing between the positive electrode and the negative electrode of each chip 14 may be in the range of 10 μm to 1 mm.

The encapsulation layer 16 encapsulates the plurality of chips 14. The molding angle α of the encapsulation layer 16 may range from 15 to 170 °, and the thickness of the encapsulation layer 16 is 40 μm to 10mm higher than the chip.

The positive electrode connecting terminal 18 is electrically connected to the positive electrodes of the plurality of chips 14, and the negative electrode connecting terminal 20 is electrically connected to the negative electrodes of the plurality of chips 14, so as to provide light emission by the serial connection of the circuits. The first substrate 121 protrudes from the second substrate 122, the protruding portion defines a power region, and the positive link terminal 18 and the negative link terminal 20 are disposed on the power region of the first substrate 121. Through the setting of anodal link terminal 18 and negative pole link terminal 20, can be external with the power, further optimize circuit design.

The integrated LED light emitting device 10 may further include an IC terminal 21 disposed in the power supply region of the first substrate 121, connected to the control IC circuit, and used for controlling the on/off of each circuit chip 14, so as to achieve the effect of display requirement, and also play a role in assisting the light emitting driving. In addition, the IC terminals may be adjusted according to design requirements and product requirements, for example, disposed on the side of the composite substrate 12, or formed on the back side to form a double-sided board structure.

The integrated LED light emitting device 10 may further include a bonding layer 22 disposed between the chip 14 and the third substrate 123. The bonding layer 22 is disposed offset from the first opening 125, in other words, the bonding layer 22 does not cover the first opening 125. The bonding layer 22 has a thickness ranging from 1 μm to 10 μm.

The integrated LED light emitting device 10 may also include mounting holes 24. Specifically, two opposite sides of the composite substrate 12 are respectively formed with a mounting hole 24 for facilitating mounting, a diameter D1 of the mounting hole 24 is larger than 1mm, and the number of the mounting holes 24 can be adjusted accordingly according to the size of the composite substrate 12.

As shown in fig. 4, the integrated LED light emitting device 10 may further include two support plates 26 covering left and right sides of the synthetic substrate 12. Specifically, the supporting plate 26 on the left side covers the side edges of the first substrate 121, the second substrate 122, and the third substrate 123, and the supporting plate 26 on the right side covers the side edge of the first substrate 121 to serve as a supporting edge for transporting the composite substrate 12, so as to improve stability. The width W1 of the support plate 26 ranges from 2mm to 20 mm.

In summary, the integrated LED lighting device 10 and the manufacturing method thereof provided by the present invention can reduce the step of attaching the light source to the substrate before the downstream assembly, so as to realize the integrated operation; the size of the substrate, the size of the chip 14 and the number of the chips 14 can be adjusted according to different industries and circuit designs, and the substrate, the chips and the chips can be directly assembled in real time; the LED packaging structure can replace the traditional LED packaging process, and the aims of industrial integration, integration and product miniaturization are fulfilled; can save manpower and material resources, reduce equipment investment, realize the effects such as full automation of product production.

In addition, it will be appreciated by those skilled in the art that, although there may be many problems with the prior art, each embodiment or aspect of the present invention may be improved only in one or several respects, without necessarily simultaneously solving all the technical problems listed in the prior art or in the background. It will be understood by those skilled in the art that nothing in a claim should be taken as a limitation on that claim.

Although terms such as flux, IC, substrate, etc. are used more often herein, the possibility of using other terms is not excluded. These terms are used merely to more conveniently describe and explain the nature of the present invention; they are to be construed as being without limitation to any additional limitations that may be imposed by the spirit of the present invention.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.