阅读说明：本技术 直接蒸发泵至冷板的分子束外延系统 (Molecular beam epitaxy system for directly evaporating pump to cold plate ) 是由 杜鹏 于 2019-04-22 设计创作，主要内容包括：公开了一种分子束外延系统,用于通过将吸气剂材料从渗出蒸发器(5)蒸发到冷板上,来消除分子束外延生长室(1)中在生长之前、生长期间或生长中断期间和/或生长之后的过剩束流量。冷板可以是分子束外延生长室(1)的低温板(2),也可以是附接腔室(9)中的冷板(8)。所述分子束外延系统包括分子束外延生长室中的低温板(2)或附接到分子束外延生长室(1)的腔室中的冷板(8)。通过适当的工艺,如冷却该冷板、为分子束外延工艺加载基板(3)、为分子束外延生长(7)提供必要的束流量、加热渗出蒸发器(5)并打开蒸发器(5)的快门以便吸气剂材料束流量到达所述板上,多余的束流量将被消除。由此,避免生长层的交叉污染。(A molecular beam epitaxy system is disclosed for eliminating excess beam flux in a molecular beam epitaxy growth chamber (1) before, during or during an interruption of growth and/or after growth by evaporating getter material from a effusion evaporator (5) onto a cold plate. The cold plate can be a low-temperature plate (2) of the molecular beam epitaxial growth chamber (1) or a cold plate (8) in an attachment chamber (9). The molecular beam epitaxy system comprises a low temperature plate (2) in the molecular beam epitaxy chamber or a cold plate (8) in a chamber attached to the molecular beam epitaxy chamber (1). By appropriate processes, such as cooling the cold plate, loading the substrate (3) for molecular beam epitaxy, providing the necessary beam flux for molecular beam epitaxy (7), heating the effusion vaporizer (5) and opening the shutter of the vaporizer (5) so that the beam flux of getter material reaches the plate, the excess beam flux will be eliminated. Thereby, cross-contamination of the grown layers is avoided.)

1. A molecular beam epitaxy system comprising:

the growth chamber is provided with a plurality of growth chambers,

a sample manipulator mounted within the growth chamber for holding a sample for epitaxial growth on the sample, an

A source for providing a beam flux of growth material to the sample,

characterized in that the molecular beam epitaxy system further comprises:

a cold plate, and

a effusion vaporizer for supplying a beam flow of getter material to the cold plate.

2. The molecular beam epitaxy system of claim 1, wherein the cold plate is mounted within the growth chamber or within an auxiliary chamber connected to the growth chamber.

3. The molecular beam epitaxy system according to claim 1 or 2, wherein the cold plate is made of stainless steel.

4. The molecular beam epitaxy system of any preceding claim, wherein the cold plate is a cryopanel of the molecular beam epitaxy system.

5. Molecular beam epitaxy system according to any preceding claim, characterised in that the effusion vaporizer comprises a filament for heating and a crucible for a plurality of getter materials.

6. Molecular beam epitaxy system according to any preceding claim, wherein the effusion vaporizer is arranged to be at 1E^-9To 1E^-2The getter material is supplied at a bundle equivalent pressure.

7. Molecular beam epitaxy system according to any preceding claim, characterised in that the amount of beam current provided by the effusion vaporiser is arranged to intersect the amount of beam current provided by the source.

8. A method for eliminating residual gases in a molecular beam epitaxy system, the method comprising:

providing the molecular beam epitaxy system with a cold plate and a effusion vaporizer,

cooling the cold plate, and

providing a beam flow of getter material from the effusion vaporizer to the cold plate.

9. The method of claim 8, wherein the cold plate is mounted within a growth chamber of the system or within a secondary chamber connected to the growth chamber.

10. The method of claim 8 or 9, wherein the cold plate is cooled by liquid nitrogen or water.

11. The method of any one of claims 8 to 10, wherein the cold plate is cooled to a temperature of 290K to 2K.

12. The method according to any of claims 8 to 11, wherein the getter material is gallium, indium, aluminum, titanium, chromium or sulfur.

13. The method of any one of claims 8 to 12, wherein the residual gas comprises one or more of: arsenic, phosphorus, antimony, oxygen, nitrogen, mercury, selenium and tellurium.

Technical Field

The present application relates to a Molecular Beam Epitaxy (MBE) system for eliminating excess beam flux in an MBE growth chamber before, during, or during an interruption of growth, and/or after growth. The MBE system is used for epitaxial growth of III-V, II-V, Si/Ge semiconductor systems, oxide materials, and other compound semiconductors.

Background

Molecular beam epitaxy systems typically have an ultra-high vacuum (UHV) growth chamber, a effusion cell for providing a molecular or atomic beam, and a pump for maintaining an ultra-high pressure environment within the chamber. The ultra-high vacuum environment within the chamber is critical to ensure that the mean free path of the molecules is larger than the dimensions of the chamber so that no collisions occur before the evaporated atoms/molecules reach the substrate.

Under normal growth conditions of solid source MBE systems for epitaxial growth of composite materials, one or two molecular elements are supplied in much higher amounts than the other elements, e.g. arsenic in GaAs systems, antimony in GaSb systems, phosphorus in InP systems, nitrogen in GaN systems, mercury in MCT systems and oxygen in oxide systems. The excess beam current provided cannot be incorporated into the growth layer, thereby forming residual gases in the growth chamber. The cryopanel and pump should pump these residual gases. However, both practical and theoretical calculations indicate that residual gases remain in the growth chamber during growth that cannot be pumped by the cryopanel and the pump. For example, if the flux of the arsenic beam for growth is at 1E^-5Torr level, background arsenic pressure in the growth chamber during GaAs growth can be as high as 1E^-7The level of the tray. Dualization of such residual gas pairs as GaAs or the likeThe growth of the compound is not harmful. However, if ternary, quaternary or quinary compounds (e.g., InAsP, inaspb, ingaalasssb, etc.) are grown during the growth process, contamination may occur because the incorporation rate of As, Sb and P elements is quite sensitive to partial pressure. Alternatively, in one system, the excess elements need to be switched between layers such as InAs/GaSb superlattices, CdTe/HgTe superlattices and silicon/oxide systems. The content of the grown structure is then less stable than expected.

Conventional pumps, such as ion pumps, turbo pumps, cryopumps, etc., have different difficulties for pumping residual gas continuously for short periods of time when there is a gas load or when an excessive molecular beam flow is supplied. If the gas load is too high, the ion pump can reach its useful life very quickly. The cryopump will saturate quickly and the turbo pump will experience a reverse flow problem. The cryopanel is designed to reduce background pressure during growth. However, the pumping efficiency is not yet high enough. For example, at 100K, at least 15% of the arsenic will still be desorbed from the As excess surface of the cryopanel. Due to the thermal load from the unit or manipulator to the cryopanel and the low thermal conductivity of stainless steel, the surface temperature of the cryopanel can be significantly higher than 77K. The pumping speed of the cryopanel is further limited. On the other hand, residual arsenic plays an important role in the sustained growth. For example, arsenic contamination is significant, undermining the structural quality of GaSb layers in InAs/GaSb systems. The As/P beam is difficult to control and switch for growing InGaAsP containing structures.

Disclosure of Invention

It is an object of the present application to provide a molecular beam epitaxy system with a direct evaporation pump that is able to pump excess beam flux or residue gas more efficiently.

The purpose of the present application is achieved by the following principles. The non-contaminating getter material will evaporate from the effusion vaporizer to the cryopanel or another cold plate to increase the adhesion efficiency of the excess beam flux. The getter material is an element that can increase the efficiency of adhesion of the molecules to be eliminated on the cold surface, if the surface already has the getter material. The getter material does not provide additional contamination to the grown layer and the beam dose of the getter material does not compromise the beam dose provided by the layer growth source. Thereby, excess beam flux or residual gas in the MBE growth chamber is eliminated.

Drawings

Figure 1 is a schematic diagram of one setup of a current application of the MBE system, in which the effusion vaporizer is mounted at the top of the chamber and works with the cryopanel of the MBE growth chamber. The beam flux provided by the evaporator does not overlap with the beam flux provided by the effusion cell.

Figure 2 is a schematic diagram of another setup of the MBE system in current use, in which the effusion vaporizer is mounted at the bottom of the chamber and works with the cryopanel of the MBE growth chamber. The beam flux provided by the evaporator has an overlap with the beam flux provided by the effusion cell.

Figure 3 is a schematic diagram of a third setup currently in use for an MBE system in which a effusion vaporizer is mounted in an additional chamber connected to the MBE growth chamber and working with a cold plate in the additional chamber.

Detailed Description

Typical MBE growth chambers include stainless steel chamber walls, a set of low temperature plate plates, pump ports, viewing windows, ports for other equipment (e.g., RHED systems), etc. Several necessary sources are connected to the chamber to provide a molecular beam flux for growth. A sample manipulator mounted to hold a substrate to be grown.

To perform MBE epitaxial growth, the substrate is loaded onto a substrate handler and heated prior to growth to perform certain surface treatments, such as removing oxides. Since the clean surface has unsaturated bonds, epitaxial growth can start at this surface. The shutter is then opened to release the evaporated molecular beam flux. The molecular beam flux reaches the substrate and forms a compound on the substrate. According to different growth mechanisms, different growth conditions are adopted, and a high-quality layer can be obtained. Although III-V semiconductor materials are typically grown under conditions that contain large amounts of group V elements, meaning that group V elements (such as arsenic, phosphorus, antimony, and nitrogen) are continuously supplied at levels much higher than group III elements, such as gallium, indium, and aluminum. The beam flux ratio of group V elements to group III elements varies between 5-30. The excess group V element creates an excess beam flux or residual pressure in the chamber. These residual molecular beam fluxes can be reflected by the cryopanel, but cannot condense completely on it in a few minutes. Pumping the chamber to base pressure typically takes 10 to 30 minutes. The same occurs in oxide systems where oxygen is supplied as an excess element and in mercury-containing systems where mercury is supplied as an excess element.

The present application also includes a oozing vaporizer that works with the cryopanel of the system to eliminate these residual gases. A separate chamber with a cold plate may also be connected to the growth chamber to provide a cold surface.

The increase in the sticking coefficient of the residual gas depends on the fact that the group iii element is not present, and the group V element is not desorbed from the surface. If there is sulfur, titanium or chromium on the surface, mercury, nitrogen and oxygen do not desorb accordingly. The adhesion of group iii elements, sulphur, titanium, chromium is always good and therefore no additional contamination occurs. For example, gallium, indium or aluminum may be used as a getter material for the elimination of arsenic. If gallium, indium or aluminum is evaporated to the cold surface, it will stay on the surface of the cold plate and the flux of the arsenic molecular beam impinging on the surface will remain unchanged. This chemisorption is extremely stable on cold surfaces. The arsenic is then removed from the free space within the chamber. The amount of stream from the effusion vaporizer not including growth to 1E^-5A range of beam flows. In the MBE region, up to 1E^-5The BEP pressure of (a) has a mean free path of hundreds of meters, so that the additional getter beam flux does not generally affect the growth beam flux. Due to careful geometric design, the flux from the effusion vaporizer cannot reach the substrate. Otherwise, it provides additional flux of the growing molecular beam. In addition, another effect, such as increasing defect density, needs to be considered.

This pumping effect is achieved by providing at least one effusion evaporator and a cold surface in the MBE system. The cold surface may be a cryopanel or an additional surface of the MBE system. The effusion vaporizer may work with a cryopanel or an additional panel. Two possible configurations are described herein.

1. The effusion vaporizer operates in conjunction with a cryopanel.

Effusion evaporator installationAt the top, bottom, or sides of the MBE growth chamber. With a well-designed geometry, the beam flux provided by the evaporator can reach most of the cryopanels of the MBE growth chamber, but not the substrate being grown. The molecular beam flux from the evaporator may traverse the beam flux path of the growth element. Due to 1e^-5The mean free path under torr is still hundreds of meters, which is huge compared to the size of the MBE growth chamber, and the beam fluxes from different sources or evaporators do not affect each other.

In fig. 1, the source (4) and other sources provide a molecular beam flux to the substrate (3) during growth. The remaining gas remains in the chamber (1). Then, the effusion vaporizer (5) supplies getter molecules onto the cryopanel (2). Since the adhesion coefficient of the residual gas on the surface covered with the getter material is 1, the collided residual gas molecules cannot be desorbed from the surface of the cryopanel. Thus, excess beam flux or residual gas is purged from the chamber. The beam flux coverage of the evaporator is marked (6). Without overlapping the getter beam flux (6) and the growth beam flux (7).

In fig. 2, the effusion vaporizer (5) supplies getter molecules from the bottom of the chamber to the cryopanel plate (2) and then collects the excess molecular beam flux onto the cryopanel. The growth beam flow (7) has an overlap with the getter beam flow (6). As mentioned above, this overlap does not affect growth.

2. The effusion evaporator works with a cold plate in an additional chamber that is connected to the MBE growth chamber.

In fig. 3, an additional chamber (9) and cold plate (8) connected to the MBE growth chamber are provided. The effusion evaporator (5) is connected to an additional chamber. As with the working principle of configuration 1, the evaporator supplies getter material to the cold plate to collect residual gas or excess beam flow from the growth chamber.

The present application has significantly lower excess beam flux levels during growth compared to conventional MBE. In addition, the switching time of the excess elements is reduced.