阅读说明：本技术 一种靶材溅射面的抛光方法 (Polishing method for sputtering surface of target ) 是由 姚力军 潘杰 边逸军 王学泽 徐礼升 于 2021-09-17 设计创作，主要内容包括：本发明提供了一种靶材溅射面的抛光方法,所述抛光方法包括以下步骤：采用钻石砂布对靶材的待加工面进行抛光处理,以形成溅射面；所述钻石砂布的目数为250-350#；本发明所述抛光方法仅采用钻石砂布进行一次抛光处理,即可使溅射面的粗糙度达到使用要求,无需更换抛光工件,简化了操作流程,节约了加工成本,提高了生产效率,有利于工业化生产。(The invention provides a polishing method of a sputtering surface of a target, which comprises the following steps: polishing the surface to be processed of the target by adopting diamond abrasive cloth to form a sputtering surface; the mesh number of the diamond abrasive cloth is 250- & ltSUB & gt 350- & gt; the polishing method provided by the invention can enable the roughness of the sputtering surface to meet the use requirement only by adopting the diamond abrasive cloth to carry out polishing treatment once, does not need to replace a polishing workpiece, simplifies the operation flow, saves the processing cost, improves the production efficiency, and is beneficial to industrial production.)

1. A polishing method of a sputtering surface of a target is characterized by comprising the following steps:

polishing the surface to be processed of the target by adopting diamond abrasive cloth to form a sputtering surface;

the mesh number of the diamond abrasive cloth is 250- & ltSUB & gt 350- & gt.

2. The polishing method as recited in claim 1, wherein the target comprises a tungsten titanium target.

3. The polishing method according to claim 1 or 2, wherein the surface to be processed comprises a circular arc surface.

4. The polishing method as claimed in any one of claims 1 to 3, wherein the rotation speed of the target material during the polishing process is 300-.

5. The polishing method according to any one of claims 1 to 4, wherein the pressure between said diamond abrasive cloth and said surface to be processed during said polishing treatment is 10 to 100N.

6. The polishing method according to any one of claims 1 to 5, wherein the diamond abrasive cloth is moved from outside to inside in a radial direction of the surface to be processed during the polishing process.

7. The polishing method according to any one of claims 1 to 6, wherein the diamond abrasive cloth is moved at a constant speed from outside to inside along a radius direction of the surface to be processed during the polishing process.

8. The polishing method according to any one of claims 1 to 7, wherein the diamond abrasive cloth is moved at a speed of 50 to 100mm/min during the polishing treatment.

9. The polishing method according to any one of claims 1 to 8, wherein the time of the polishing treatment is 10 to 30 min.

10. The polishing method according to any one of claims 1 to 9, comprising the steps of:

providing a tungsten titanium target material, wherein the target material is provided with an arc-shaped surface to be processed;

and polishing the surface to be processed by adopting 250- & ltSUB & gt- & gt 350- & ltSUB & gt diamond abrasive cloth, wherein in the polishing process, the rotating speed of the target is 300- & ltSUB & gt 500 & lt/SUB & gt, the pressure between the diamond abrasive cloth and the surface to be processed is 10-100N, the diamond abrasive cloth moves at a constant speed along the radius direction of the surface to be processed from outside to inside at a speed of 50-100mm/min, and a sputtering surface is formed after polishing for 10-30 min.

Technical Field

The invention belongs to the technical field of sputtering target processing, and relates to a polishing method of a target sputtering surface.

Background

The sputtering target is one of important raw materials in the preparation process of semiconductor integrated circuits, and is mainly used for preparing physical vapor deposition films of contacts, through holes, interconnecting wires, barrier layers, packaging and the like in the integrated circuits. In the magnetron sputtering process, target atoms are deposited on the surface of a substrate by bombarding the surface of the target with accelerated ions, so that a deposited film is formed.

The quality of the target material used in the magnetron sputtering process is one of the key factors influencing the quality of the magnetron sputtering coating. The quality requirements for the sputtering target are higher than those of the traditional material industry. The general quality requirements of the sputtering target mainly include the requirements on the aspects of size, flatness, purity, component content, density, grain size, defect control and the like; in addition, the sputtering target material has higher quality requirements or special quality requirements in terms of surface roughness, resistance value, uniformity of crystal grain size, uniformity of composition and structure, content and size of foreign matter (oxide), magnetic permeability, ultra-high density, ultra-fine crystal grains, and the like. Therefore, further polishing is required after turning to meet the use requirements.

CN107662083A provides a method for processing a sputtering surface of a target, which comprises: 1) carrying out rough polishing treatment on the surface to be processed by adopting first flocking abrasive paper, and removing a stress deformation layer on the surface to be processed to form a rough polished surface; 2) carrying out semi-fine polishing treatment on the rough polishing surface by using second flocking abrasive paper to form a semi-fine polishing surface; 3) carrying out fine polishing treatment on the semi-fine polished surface by using third flocking abrasive paper to form a sputtering surface; 4) the roughness of second flocking abrasive paper is less than the roughness of first flocking abrasive paper, and is greater than the roughness of third flocking abrasive paper.

CN113021125A provides a method for treating a titanium target sputtering surface, which comprises sand paper treatment, scouring pad treatment and wool wheel treatment which are sequentially carried out; the sanding treatment comprises the following steps of sequentially carrying out 320# sanding treatment and 600# sanding treatment; the scouring pad treatment comprises 1200# scouring pad treatment and 2000# scouring pad treatment which are sequentially carried out; the wool wheel treatment comprises the steps of sequentially carrying out wool wheel and diamond grinding paste W10 treatment, wool wheel and diamond grinding paste W3.5 treatment and wool wheel and diamond grinding paste W1.5 treatment; the sand paper treatment time is 8-10 min; the time for treating the scouring pad is 2-4 min; the wool wheel treatment time is 8-11 min.

CN112828541A discloses a processing method of a tantalum target material and a sputtering surface thereof, which comprises turning and polishing in sequence; the turning is to feed a cutter blade from the edge to the center along the diameter direction of the tantalum target material; the turning comprises rough turning and finish turning which are carried out in sequence, and the tool insert amount is kept constant in the rough turning and finish turning processes; the finish turning comprises 8-12 cutter turning, and the remaining allowance of the finish turning is 0.3-0.6 mm; and the polishing step is to polish the turning surface of the tantalum target material by using sand paper and scouring pad.

CN112809455A discloses a polishing method of a tungsten silicon target and a sputtering surface thereof, which comprises a first water mill polishing, a second water mill polishing and a third water mill polishing which are carried out back and forth; the number of round trips is 15-25; the running speeds of the target materials of the first water mill polishing, the second water mill polishing and the third water mill polishing are respectively and independently 0.1-0.3m/s and are respectively and independently carried out by adopting water mill abrasive belts; the rotating speed of the water grinding abrasive belt is 10-30r/min, and the specification comprises a No. 600 white corundum abrasive belt or a No. 800 white corundum abrasive belt; the first water mill polishing, the second water mill polishing and the third water mill polishing are respectively and independently accompanied with cooling water to flush the sputtering surface of the target; the flushing rate of the cooling water is 600-800mL/min, and the temperature is 5-25 ℃.

Although the above polishing method can make the roughness of the sputtering surface meet the use requirement, the steps are too complicated, the polishing piece needs to be frequently replaced, and repeated polishing is needed. Therefore, the simple and convenient polishing method is provided, and the important significance is realized in simplifying the polishing process.

Disclosure of Invention

Aiming at the problems in the prior art, the invention aims to provide a polishing method of a target sputtering surface, in particular to a polishing method of a tungsten-titanium target arc sputtering surface.

In order to achieve the purpose, the invention adopts the following technical scheme:

in a first aspect, the present invention provides a polishing method for a sputtering surface of a target, including the steps of:

and polishing the surface to be processed of the target by adopting diamond abrasive cloth to form a sputtering surface.

The diamond abrasive cloth has a mesh number of 250-.

In the invention, the polishing method utilizes the high wear resistance of the diamond abrasive cloth according to the property of the surface of the target material. Only one-time polishing treatment is carried out, so that the roughness of the sputtering surface can meet the use requirement, a polishing workpiece does not need to be replaced, the operation flow is simplified, the processing cost is saved, the production efficiency is improved, and the industrial production is facilitated.

In the invention, the mesh number of the diamond abrasive cloth has certain influence on the final polishing effect. Too large or too small of the amount can affect the roughness and appearance quality of the target surface.

The following technical solutions are preferred technical solutions of the present invention, but not limited to the technical solutions provided by the present invention, and technical objects and advantageous effects of the present invention can be better achieved and achieved by the following technical solutions.

As a preferred embodiment of the present invention, the target includes a tungsten titanium target.

As a preferable technical solution of the present invention, the surface to be processed includes a circular arc surface.

As a preferred technical solution of the present invention, during the polishing process, the rotation speed of the target is 300-.

In the invention, the target material is fixed on a rotatable device, and the device drives the target material to rotate for polishing.

In the invention, the rotating speed of the target material needs to be controlled. If the rotating speed is too high, excessive heat is generated, so that the appearance quality does not reach the standard; if the rotation speed is too slow, the roughness is affected, and the subsequent use is further affected.

In a preferred embodiment of the present invention, the pressure between the diamond abrasive cloth and the surface to be processed during the polishing process is 10 to 100N, for example, 10N, 20N, 30N, 40N, 50N, 60N, 70N, 80N, or 100N, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned range are also applicable.

As a preferred technical solution of the present invention, in the polishing process, the diamond abrasive cloth moves from outside to inside along a radial direction of the surface to be processed.

As a preferred technical solution of the present invention, in the polishing process, the diamond abrasive cloth moves at a constant speed from outside to inside along a radial direction of the surface to be processed.

In a preferred embodiment of the present invention, the diamond cloth is moved at a speed of 50 to 100mm/min, for example, 50mm/min, 60mm/min, 70mm/min, 80mm/min, 90mm/min, or 100mm/min during the polishing process, but the diamond cloth is not limited to the above-mentioned values, and other values not shown in the above-mentioned value range are also applicable.

In the present invention, the moving speed of the diamond abrasive cloth is controlled. If the speed is too fast or too slow, the roughness and the appearance quality of the surface of the target material are affected, and the subsequent coating quality is further affected.

As a preferred embodiment of the present invention, the polishing method comprises the steps of:

providing a tungsten titanium target material, wherein the target material is provided with an arc-shaped surface to be processed;

and polishing the surface to be processed by adopting 250- & ltSUB & gt- & gt 350- & ltSUB & gt diamond abrasive cloth, wherein in the polishing process, the rotating speed of the target is 300- & ltSUB & gt 500 & lt/SUB & gt, the pressure between the diamond abrasive cloth and the surface to be processed is 10-100N, the diamond abrasive cloth moves at a constant speed along the radius direction of the surface to be processed from outside to inside at a speed of 50-100mm/min, and a sputtering surface is formed after polishing for 10-30 min.

Compared with the prior art, the invention has the following beneficial effects:

the polishing method of the invention only adopts diamond abrasive cloth to carry out polishing treatment once, so that the roughness of the sputtering surface can meet the use requirement, the roughness is below 1.0 mu m, and the roughness can be below 0.5 mu m by further controlling the conditions in the polishing process; and the polishing workpiece does not need to be replaced in the polishing process, so that the operation flow is simplified, the processing cost is saved, the production efficiency is improved, and the industrial production is facilitated.

Detailed Description

In order to better illustrate the present invention and facilitate the understanding of the technical solutions of the present invention, the present invention is further described in detail below. However, the following examples are only simple examples of the present invention and do not represent or limit the scope of the present invention, which is defined by the claims.

The diamond cloths used in the following examples were purchased from 3M company.

The following are typical but non-limiting examples of the invention:

example 1:

the embodiment provides a polishing method of a sputtering surface of a target, which comprises the following steps:

providing a tungsten titanium target material with the diameter of 300mm, wherein the target material is provided with an arc-shaped surface to be processed;

and polishing the surface to be processed by using No. 250 diamond abrasive cloth, wherein in the polishing process, the rotating speed of the target is 300r/min, the pressure between the diamond abrasive cloth and the surface to be processed is 50N, the diamond abrasive cloth moves at a constant speed of 50mm/min from outside to inside along the radius direction of the surface to be processed, and a sputtering surface is formed after polishing for 10 min.

Example 2:

the embodiment provides a polishing method of a sputtering surface of a target, which comprises the following steps:

providing a tungsten titanium target material with the diameter of 200mm, wherein the target material is provided with an arc-shaped surface to be processed;

and polishing the surface to be processed by adopting 350# diamond abrasive cloth, wherein in the polishing process, the rotating speed of the target is 500r/min, the pressure between the diamond abrasive cloth and the surface to be processed is 10N, the diamond abrasive cloth moves at a constant speed of 80mm/min from outside to inside along the radius direction of the surface to be processed, and a sputtering surface is formed after polishing for 20 min.

Example 3:

the embodiment provides a polishing method of a sputtering surface of a target, which comprises the following steps:

providing a tungsten titanium target material with the diameter of 400mm, wherein the target material is provided with an arc-shaped surface to be processed;

and polishing the surface to be processed by using No. 300 diamond abrasive cloth, wherein in the polishing process, the rotating speed of the target is 400r/min, the pressure between the diamond abrasive cloth and the surface to be processed is 100N, the diamond abrasive cloth moves at a constant speed of 100mm/min from outside to inside along the radius direction of the surface to be processed, and a sputtering surface is formed after polishing for 30 min.

Example 4:

the present example provides a polishing method of a sputtering surface of a target, which is different from the polishing method of example 1 only in that: in the polishing treatment process, the rotating speed of the target material is 200 r/min.

Example 5:

the present example provides a polishing method of a sputtering surface of a target, which is different from the polishing method of example 2 only in that: in the polishing treatment process, the rotating speed of the target material is 600 r/min.

Example 6:

the present example provides a polishing method of a sputtering surface of a target, which is different from the polishing method of example 1 only in that: in the polishing process, the diamond abrasive cloth moves at a constant speed of 30 mm/min.

Example 7:

the present example provides a polishing method of a sputtering surface of a target, which is different from the polishing method of example 3 only in that: in the polishing process, the diamond abrasive cloth moves at a constant speed of 120 mm/min.

Comparative example 1:

this comparative example provides a polishing method of a sputtering face of a target material, which is different from the polishing method in example 1 only in that: and (5) polishing by using flocked abrasive paper.

Comparative example 2:

this comparative example provides a polishing method of a sputtering face of a target material, which is different from the polishing method in example 1 only in that: polishing treatment was performed using 200# diamond abrasive cloth.

Comparative example 3:

this comparative example provides a polishing method of a sputtering face of a target material, which is different from the polishing method in example 2 only in that: the polishing treatment was performed using 400# diamond cloth.

The roughness of the sputtered surface after polishing in examples 1 to 7 and comparative examples 1 to 3 was measured, and the results are shown in Table 1.

TABLE 1

	Roughness/mum
		Example 1	0.3
Example 2	0.2
		Example 3	0.5
Example 4	1.0
		Example 5	0.8
Example 6	1.0
		Example 7	0.9
Comparative example 1	1.5
		Comparative example 2	1.0
Comparative example 3	1.1

The flocked sandpaper used in comparative example 1 had poor abrasion resistance, resulting in greater roughness.

The reduced or increased mesh size of the diamond gauze of comparative examples 2-3 resulted in greater coarseness than was possible without the standard.

It can be seen from the above examples and comparative examples that the polishing method of the present invention can make the roughness of the sputtering surface meet the use requirement by only performing a polishing treatment with diamond abrasive cloth, and make the roughness below 1.0 μm, and further control the conditions in the polishing process to make the roughness below 0.5 μm; and the polishing workpiece does not need to be replaced in the polishing process, so that the operation flow is simplified, the processing cost is saved, the production efficiency is improved, and the industrial production is facilitated.

The applicant states that the present invention is illustrated in detail by the above examples, but the present invention is not limited to the above detailed methods, i.e. it is not meant that the present invention must rely on the above detailed methods for its implementation. It will be apparent to those skilled in the art that any modifications to the present invention, equivalents thereof, additions of additional operations, selection of specific ways, etc., are within the scope and disclosure of the present invention.