阅读说明：本技术 量子点结构、其制作方法及量子点发光器件 (Quantum dot structure, manufacturing method thereof and quantum dot light-emitting device ) 是由 杨绪勇 曹璠 王晓俊 叶海桥 柳杨 冯靖雯 于 2020-03-30 设计创作，主要内容包括：本公开实施例提供了一种量子点结构、其制作方法及量子点发光器件,量子点结构,包括：核结构；壳层,包裹在核结构的表面；其中,核结构在靠近壳层的部位具有至少一种壳前驱体元素；壳前驱体元素为与壳层中的元素相同的元素。通过在形成团簇结构的阶段加入含配位溶剂的壳前驱体得到的,在成核过程中,配位溶剂具有表面钝化作用,减缓了纳米团簇结构转化为核结构的过程,可以改善量子点成核过程的可控性,壳前驱体吸附在纳米团簇结构的表面,可以避免量子点成核过程中发生高温熟化,在继续成核的过程中,使形成的核结构的尺寸分布更加均一,提升了量子点结构的色纯度。(The embodiment of the disclosure provides a quantum dot structure, a manufacturing method thereof and a quantum dot light-emitting device, wherein the quantum dot structure comprises: a core structure; the shell layer is wrapped on the surface of the core structure; wherein the core structure has at least one shell precursor element at a position near the shell layer; the shell precursor elements are the same elements as in the shell layer. The shell precursor containing the coordination solvent is added in the stage of forming the cluster structure, in the nucleation process, the coordination solvent has a surface passivation effect, the process of converting the nanocluster structure into the core structure is slowed down, the controllability of the quantum dot nucleation process can be improved, the shell precursor is adsorbed on the surface of the nanocluster structure, high-temperature curing can be avoided in the quantum dot nucleation process, in the process of continuing nucleation, the size distribution of the formed core structure is more uniform, and the color purity of the quantum dot structure is improved.)

A quantum dot structure, comprising:

a core structure;

the shell layer is wrapped on the surface of the core structure;

wherein the core structure has at least one shell precursor element at a location proximal to the shell layer; the shell precursor elements are the same elements as in the shell layer.

The quantum dot structure of claim 1, wherein the core structure comprises: a metal element and a nonmetal element bonded by a chemical bond; wherein the metal element is a group III element, and the nonmetal element is a group V element.

The quantum dot structure of claim 2, wherein the core structure has the metal element, the non-metal element, and the shell precursor element at a portion near the shell layer.

The quantum dot structure of claim 1, wherein the shell precursor element is zinc, selenium, or sulfur.

A quantum dot light-emitting device, wherein the quantum dot light-emitting layer of the quantum dot light-emitting device has the quantum dot structure according to any one of claims 1 to 4.

A method for fabricating a quantum dot structure according to any of claims 1 to 4, comprising:

mixing a precursor of a metal element, a fatty acid ligand and a non-coordination solvent;

adding a precursor of a nonmetallic element into the mixed solution and heating to form a nanocluster structure with a core structure;

at the stage of forming the nanocluster structure, a shell precursor containing a coordinating solvent is added and heated to form the nanocluster structure into a core structure and a shell layer on the outer side of the core structure.

The method of claim 6, wherein the mixing a precursor of the metal element, the fatty acid ligand, and the non-coordinating solvent comprises:

adding a precursor of a metal element, a fatty acid ligand and a non-coordinating solvent into a reaction container;

introducing inert gas into the reaction container and heating to a first temperature; wherein the first temperature is in the range of 100 ℃ to 160 ℃.

The method of claim 7, wherein adding a precursor of a non-metallic element to the mixed solution and heating comprises:

cooling the mixed solution, adding a phosphorus source and a phosphorus coordination solvent, and adding the solution to a second temperature; wherein the second temperature is in the range of 170 ℃ to 230 ℃.

The fabrication method according to claim 6, wherein the step of adding a shell precursor containing a coordinating solvent and heating at the stage of forming the nanocluster structure comprises:

adding a shell precursor containing a coordination solvent at the stage of forming the nanocluster structure;

heating the solution added with the shell precursor containing the coordination solvent to a third temperature; the third temperature is in the range of 240 ℃ to 320 ℃.

The method according to claim 9, wherein the coordinating solvent is one or a combination of tri-n-octylphosphine and tributylphosphine;

the shell precursor is one or a combination of zinc sulfide, zinc selenide and zinc sulfoselenide.

The method of manufacturing of claim 6, further comprising:

and purifying the formed quantum dot structure by adopting n-hexane and ethanol.

The production method according to any one of claims 6 to 11, wherein the precursor of the metal element is one or a combination of indium methanesulfonate, indium acetate, indium laurate, indium myristate, indium palmitate, indium stearate, indium eicosanoate, and indium acetylacetonate.

The method according to any one of claims 6 to 11, wherein the fatty acid ligand is one or a combination of dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, and eicosanoic acid.