阅读说明：本技术 包含多电平命令和地址信号的装置和方法 (Apparatus and method including multi-level command and address signals ) 是由 金康永 于 2020-05-15 设计创作，主要内容包括：多电平命令和地址CA信号用于将命令和存储器地址从控制器提供到存储器系统。与二进制信号相比,使用多电平信号CA信号可以允许使用更少的信号来表示相同数量的命令和/或地址空间,或使用相同数量的多电平CA信号来表示更多数量的命令和/或地址空间。可以在不减小命令和/或地址空间的集合情况下减少外部命令/地址端子的数量。可替代地,可以保持外部端子的数量,但是提供命令和/或地址空间的扩展集合。(The multi-level command and address CA signals are used to provide commands and memory addresses from the controller to the memory system. Using multi-level signal CA signals may allow the same number of command and/or address spaces to be represented using fewer signals or a greater number of command and/or address spaces to be represented using the same number of multi-level CA signals than binary signals. The number of external command/address terminals can be reduced without reducing the set of command and/or address spaces. Alternatively, the number of external terminals may be maintained, but an extended set of command and/or address spaces is provided.)

1. An apparatus, comprising:

an address decoder configured to receive an address signal and provide a decoded address;

a command decoder configured to receive internal command signals and provide internal control signals for performing memory operations; and

a command/address input circuit configured to receive multi-level command and address signals and to provide output signals representing values of the multi-level command and address signals to the address decoder and the command decoder, wherein a plurality of the command and address signals represent more bits.

2. The device of claim 1, wherein the multi-level command and address signals include at least two multi-level command and address signals representing three bits of address information.

3. The device of claim 1, wherein the multi-level command and address signals comprise three-level signals.

4. The device of claim 1, wherein the command/address input circuit comprises:

a multi-level input buffer configured to receive the multi-level command and address signals and to provide, for each of the multi-level command and address signals, a respective output signal having a logic level based on the respective multi-level command and address signal;

a command and address input decoder circuit configured to receive the output signal from the multi-level input buffer and configured to provide a decoded signal representative of the bits of the multi-level command and address signal.

5. The device of claim 4, wherein the command/address input circuit further comprises a signal latch configured to latch the output signal from the multi-level input buffer.

6. The apparatus of claim 4, wherein the multi-level input buffer comprises a plurality of multi-level input buffer circuits each configured to receive a respective one of the multi-level command and address signals, each of the plurality of multi-level input buffers comprising:

a first buffer circuit configured to receive the respective multi-level command and address signals and to receive a first reference voltage, the first buffer circuit configured to provide a first one of the output signals based on a voltage of the respective multi-level command and address signals relative to the first reference voltage; and

a second buffer circuit configured to receive the respective multi-level command and address signals and to receive a second reference voltage, the second buffer circuit configured to provide a second one of the output signals based on a voltage of the respective multi-level command and address signals relative to the second reference voltage.

7. An apparatus, comprising:

an address decoder configured to receive an address signal and provide a decoded address;

a command decoder configured to receive internal command signals and provide internal control signals for performing memory operations; and

a command/address input circuit configured to receive a plurality of multilevel command and address signals and to provide output signals representing values of the plurality of multilevel command and address signals to an address decoder and a command decoder, wherein each of the multilevel command and address signals has a respective voltage corresponding to one of three or more different values.

8. The apparatus of claim 7, wherein each multi-level command and address signal has a voltage corresponding to 0, 1, or 2.

9. The apparatus of claim 7, wherein the values of the plurality of multi-level command and address signals provided to the address decoder are represented by bits and the values of the plurality of multi-level command and address signals provided to the command decoder are represented by output signals having logic levels corresponding to non-binary values.

10. The device of claim 9, wherein the command/address input circuit is configured to provide three bits to the address decoder based on the values of two multi-level command and address signals.

11. The apparatus of claim 9, wherein the command/address input circuit is configured to provide four output signals to the command decoder based on one multi-level command and address signal.

12. An apparatus, comprising:

an address decoder configured to receive an address signal and provide a decoded address;

a command decoder configured to receive internal command signals and provide internal control signals for performing memory operations; and

a command/address input circuit configured to receive a plurality of multi-level command and address signals and to provide output signals to the address decoder and the command decoder, wherein the output signals include signals representing binary values and signals representing non-binary values.

13. The apparatus of claim 12, wherein the signals representing binary values correspond to internal address signals and the signals representing non-binary values correspond to internal command signals.

14. The apparatus of claim 13, wherein the command/address input circuit comprises a multi-level input buffer configured to receive the plurality of multi-level command and address signals and to provide, for each of the plurality of multi-level command and address signals, a respective pair of output signals having respective logic levels based on values represented by the respective multi-level command and address signals.

15. The apparatus of claim 14, wherein the command/address input circuit further comprises a command and address input decoder circuit configured to provide a decoded signal based on a plurality of pairs of output signals from the multilevel input buffer, wherein the decoded signal represents a bit and is provided to the address decoder.

16. The apparatus of claim 14, wherein the command/address input circuit further comprises a signal latch configured to receive a plurality of pairs of output signals from the multi-level input buffer and to provide the plurality of pairs of output signals to the command decoder.

17. An apparatus, comprising:

an address decoder configured to receive an address signal and provide a decoded address;

a command decoder configured to receive internal command signals and provide internal control signals for performing memory operations; and

command/address input circuitry configured to receive a plurality of multilevel command and address signals and to provide output signals to the address decoder and the command decoder, wherein the multilevel command and address signals represent a command structure that includes a command operand to identify a memory command and further includes memory address information to identify a memory location to which the memory command is directed,

wherein the command operand is represented by a first portion of the plurality of multi-level command and address signals and each of the multi-level command and address signals of the first portion represents a non-binary value, and wherein the address information is represented by a second portion of the plurality of multi-level command and address signals and the multi-level command and address signals of the second portion represent bits of memory address information.

18. The apparatus of claim 17, wherein the second portion of pairs of multi-level command and address signals represent three bits of memory address information.

19. The device of claim 17, wherein the command structure includes a first portion and a second portion, the first portion received by the command/address input circuit on a rising edge of a clock signal and the second portion received by the command/address input circuit on a falling edge of the clock signal.

20. The apparatus of claim 19, wherein a first and a second of the first portion of the plurality of multi-level command and address signals represent the command operand, and wherein a first and a second of the second portion of the plurality of multi-level command and address signals represent address information.

21. An apparatus, comprising:

a command and address bus;

a controller configured to provide multi-level command and address signals to the command and address bus, the multi-level command and address signals each having a respective voltage corresponding to one of at least three or more different values; and

a memory system coupled to the controller through the command and address bus, the memory system including a plurality of memories, each of the memories configured to receive the multi-level command and address signals and decode the multi-level command and address signals to represent binary values of a memory address.

22. The apparatus of claim 21, wherein each of the memories of the memory system is further configured to receive the multilevel command and address signals and decode the command and address signals into non-binary values of a command operand.

23. An apparatus, comprising:

a memory configured to receive a plurality of multi-level command and address signals representing a command structure including command operands and memory addresses, the multi-level command and address signals having respective voltages corresponding to non-binary values, wherein the memory includes:

means for providing internal command signals representing the command operands based on the multi-level command and address signals;

means for providing an internal address signal representing the memory address, the memory address including a plurality of bits represented by the internal address signal; and

means for performing a memory operation on a memory location based on the internal address signal based on the internal command signal.

24. A method, comprising:

receiving, at a memory, a plurality of multi-level command and address signals representing a command structure including a command operand and a memory address, the multi-level command and address signals having respective voltages corresponding to one of at least three different voltages, each of the at least three different voltages corresponding to a different value;

providing internal command signals representing the command operands based on the multi-level command and address signals;

providing internal address signals representing the memory address, the memory address including a plurality of bits represented by the internal address signals; and

performing a memory operation on a memory location based on the internal address signal based on the internal command signal.

25. The method of claim 24, wherein providing the internal command signals comprises providing output signals based on each of multi-level command and address signals, wherein the output signals represent values of the respective multi-level command and address signals.

26. The method of claim 25, wherein providing the internal address signal comprises decoding the output signal of a plurality of multi-level command and address signals and providing a decoded signal having a logic level based on a logic level of the output signal.

27. The method of claim 24, wherein providing internal address signals comprises providing three bits of the memory address from two of the multilevel command and address signals.

28. The method of claim 24, wherein providing internal command signals comprises providing a plurality of output signals having respective logic levels based on values represented by a multi-level command and address signal.

29. The method of claim 28, wherein providing internal address signals comprises providing bits of the memory address based on the plurality of output signals.

Background

Semiconductor memories are used in many electronic systems to store data that can be retrieved at a later time. As electronic systems are increasingly required to be faster, have larger memory capacities, and have additional features, semiconductor memories that can access, store more data faster, and contain new features are constantly being developed to meet changing needs. The goal of each generation of semiconductor memory was to improve the performance of the memory in electronic systems.

Semiconductor memories are typically controlled by providing command signals, address signals and clock signals to the memory. For example, various signals may be provided by a memory controller. The command signals and address signals include memory commands and memory addresses that control the semiconductor memory to perform various memory operations, such as read operations for retrieving data from the memory and write operations for storing data into the memory, at memory locations corresponding to the memory addresses. Read data and write data may be provided between the controller and the memory at known timings relative to one or more of the clock signals, e.g., system clock signals CK and CKF.

As semiconductor memories are developed with greater performance, for example, by increasing memory capacity and a greater number of commands and features, the number of memory commands and memory addresses may correspondingly increase. Thus, larger memory control information in the form of command and address signals may likewise be added, often requiring additional external terminals to receive the command and address signals. However, adding external terminals increases the semiconductor memory die size and increases circuit complexity, both of which may be undesirable. Future semiconductor memory designs will benefit from solutions that break design limitations that are currently imposed by current methods of providing memory control information via command signals and address signals.

Disclosure of Invention

Apparatus and methods including multi-level command and address signals are disclosed. For example, an example apparatus includes an address decoder configured to receive address signals and provide decoded addresses, and a command decoder configured to receive internal command signals and provide internal control signals for performing memory operations. The example apparatus further includes a command/address input circuit configured to receive multi-level command and address signals and to provide output signals representing values of the multi-level command and address signals to the address decoder and the command decoder. A plurality of command and address signals represent more bits.

Another example apparatus includes an address decoder configured to receive address signals and provide decoded addresses, and a command decoder configured to receive internal command signals and provide internal control signals for performing memory operations. The example apparatus further includes a command/address input circuit configured to receive a plurality of multi-level command and address signals and to provide output signals representing values of the plurality of multi-level command and address signals to an address decoder and a command decoder. Each multi-level command and address signal has a respective voltage corresponding to one of three or more different values.

Another example apparatus includes an address decoder configured to receive address signals and provide decoded addresses, and a command decoder configured to receive internal command signals and provide internal control signals for performing memory operations. The example apparatus further includes a command/address input circuit configured to receive a plurality of multi-level command and address signals and to provide output signals to the address decoder and the command decoder. The output signals include signals representing binary values and signals representing non-binary values.

Another example apparatus includes an address decoder configured to receive address signals and provide decoded addresses, and a command decoder configured to receive internal command signals and provide internal control signals for performing memory operations. The example apparatus further includes a command/address input circuit configured to receive a plurality of multi-level command and address signals and to provide output signals to the address decoder and the command decoder. The multi-level command and address signals represent a command structure that includes command operands to identify memory commands, and further includes memory address information to identify a memory location to which the memory command is directed. The command operand is represented by a first portion of the plurality of multi-level command and address signals, and each of the multi-level command and address signals of the first portion represents a non-binary value. The address information is represented by a second portion of the plurality of multi-level command and address signals, and the multi-level command and address signals of the second portion represent bits of memory address information.

Another example apparatus includes an address decoder configured to receive address signals and provide decoded addresses, and a command decoder configured to receive internal command signals and provide internal control signals for performing memory operations. The example apparatus further includes a command/address input circuit configured to receive a plurality of multi-level command and address signals and to provide output signals to the address decoder and the command decoder. The multi-level command and address signals represent a command structure that includes command operands to identify memory commands, and further includes memory address information to identify a memory location to which the memory command is directed. The command operand is represented by a first portion of the plurality of multi-level command and address signals, and each of the multi-level command and address signals of the first portion represents a non-binary value. The address information is represented by a second portion of the plurality of multi-level command and address signals, and the multi-level command and address signals of the second portion represent bits of memory address information.

Another example apparatus includes a command and address bus, a controller, and a memory system. The controller is configured to provide multi-level command and address signals to the command and address bus. The multi-level command and address signals each have a respective voltage corresponding to one of at least three or more different values. The memory system is coupled to the controller by the command and address bus and contains a plurality of memories. Each of the memories is configured to receive the multi-level command and address signals and decode the multi-level command and address signals to represent binary values of a memory address.

Another example apparatus includes a memory configured to receive a plurality of multi-level command and address signals representing a command structure including command operands and memory addresses. The multi-level command and address signals have respective voltages corresponding to non-binary values. The memory includes means for providing internal command signals representing the command operands based on the multilevel command and address signals, and means for providing internal address signals representing the memory address. The memory address includes a plurality of bits represented by the internal address signals. The memory further includes means for performing a memory operation on a memory location based on the internal address signal based on the internal command signal.

An example method includes receiving, at a memory, a plurality of multi-level command and address signals representing a command structure including a command operand and a memory address. The multi-level command and address signals have respective voltages corresponding to one of at least three different voltages. Each of the at least three different voltages corresponds to a different value. The example method further comprises: providing internal command signals representing the command operands based on the multi-level command and address signals; providing internal address signals representing the memory address, the memory address including a plurality of bits represented by the internal address signals; and performing a memory operation on a memory location based on the internal address signal based on the internal command signal.

Drawings

Fig. 1 is a block diagram of a system according to an embodiment of the present disclosure.

Fig. 2 is a block diagram of an apparatus according to an embodiment of the present disclosure.

FIG. 3 is a block diagram of a multi-level input buffer and command and address input decoder circuit according to an embodiment of the present disclosure.

Fig. 4 is a schematic diagram of a multi-level input buffer circuit according to an embodiment of the present disclosure.

Fig. 5 is a graph of the relationship between a three-level input signal and the logic level of an output signal representing the value of the three-level input signal according to an embodiment of the present disclosure.

Fig. 6 is a graph of the voltage of a three-level input signal versus the logical value represented by the three-level input signal according to an embodiment of the present disclosure.

Fig. 7 is a schematic diagram of a multi-level input buffer including a pair of multi-level input buffer circuits according to an embodiment of the present disclosure.

Fig. 8 is a graph of a relationship between two three-level input signals, an output signal, and a decoded signal according to an embodiment of the present disclosure.

Fig. 9 is a timing diagram illustrating various signals for receiving commands and/or addresses at a semiconductor device according to an embodiment of the disclosure.

FIG. 10 is a diagram of a command structure, such as commands and addresses for multi-level command and address signals, according to an embodiment of the present disclosure.

FIG. 11 is a block diagram of a multi-level input buffer, a Command and Address (CA) input decoder circuit, and a signal latch according to an embodiment of the disclosure.

FIG. 12 is a diagram of a command structure, such as commands and addresses for multi-level command and address signals, according to an embodiment of the disclosure.

Detailed Description

Apparatus and methods for providing information between a controller and a memory system using multi-level signals are described. In some embodiments of the present disclosure, multi-level Command and Address (CA) signals are used to provide command and memory addresses from a controller to a memory system. Using multi-level signals for CA signals, for example, may allow the same number of command and/or address spaces to be represented using fewer signals (as compared to binary signals) or a greater number of command and/or address spaces to be represented using the same number of signals. In the former instance, the number of external terminals (e.g., command/address terminals) may be reduced without reducing the set of command and/or address spaces. In the latter example, the number of external terminals may be maintained, but an extended set of command and/or address spaces is provided.

Fig. 1 is a block diagram of a system 100 according to an embodiment of the present disclosure. System 100 includes a controller 10 and a memory system 105. Memory system 105 includes memories 110(0) -110(p) (e.g., "device 0" through "device p"), where p is a non-zero integer. In some embodiments of the present disclosure, memory 110 may be a Dynamic Random Access Memory (DRAM), such as a Low Power Double Data Rate (LPDDR) DRAM. Memories 110(0) -110(p) are each coupled to a command/address, data, and clock bus. Each of the buses may include one or more signal lines on which signals are provided. The controller 10 and the memory system 105 communicate over several buses. For example, Command and Address (CA) signals are received by the memory system 105 on the command/address bus 115, and data is provided between the controller 10 and the memory system 105 over the data bus 125. Various clock signals may be provided between the controller and the memory system 105 through a clock bus 130. The clock bus 130 may include signal lines for providing the controller 10 with system clock signals CK and CKF received by the memory system 105, data clock signals WCK and WCKF received by the memory system 105, and an access data clock signal RDQS provided by the memory system 105.

The CK and CKF signals provided by the controller 10 to the memory system 105 are used to time the provision and receipt of commands and addresses. The WCK and WCKF signals and the RDQS signal are used to time the provision of data. The CK signal and the CKF signal are complementary, and the WCK signal and the WCKF signal are complementary. The WCK and WCKF signals provided by the controller 10 to the memory system 105 may be synchronized with the CK and CKF signals also provided by the controller 10 to the memory system 105.

The controller 10 provides commands to the memory system 105 to perform memory operations. Non-limiting examples of memory commands include timing commands for controlling the timing of various operations, access commands for accessing the memory, such as read commands for performing read operations, and write commands for performing write operations. The command signals provided by the controller 10 to the memory system 105 further include select signals (e.g., chip select CS signals CS0, CS1, CSp). When all the memories 110 are supplied with command, address, data and clock signals, the selection signals supplied on the respective selection signal lines are used to select which memory 110 will respond to the command and perform the corresponding operation. In some embodiments of the present disclosure, a respective select signal is provided to each memory 110 of the memory system 105. The controller 10 provides an active select signal to select the corresponding memory 110. When the corresponding select signal is active, the corresponding memory 100 is selected to receive the command and address provided on the command/address bus 115.

The CA signals provided by the controller 10 to the memory system 105 may be multilevel signals representing commands and addresses. The multi-level CA signal has a respective voltage level corresponding to one of a plurality of different voltage ranges. Each of the different voltage ranges corresponds to a respective value. The memory system 105 uses a combination of values represented by the multi-level CA signal to identify commands issued by the controller 10 and the memory addresses to which the commands are directed. In some embodiments of the present disclosure, the CA signal may have a respective voltage level corresponding to one of three different voltage ranges (e.g., three-level signaling). In other embodiments of the present disclosure, the CA signal may have a respective voltage level corresponding to one of four different voltage ranges (e.g., four-level signaling). The present disclosure is not intended to be limited to three-level or four-level signaling and, more generally, is not intended to be limited to any particular amount of level signaling.

In operation, when an activate command and a read command and associated address are provided by the controller 10 to the memory system 105, the memory 110 selected by the select signal receives the read command and associated address and performs a read operation to provide the controller 10 with read data from the memory location corresponding to the associated address. In preparation for the selected memory 110 to provide read data to the controller 10, the controller provides valid WCK and WCKF signals to the memory system 105. The WCK and WCKF signals may be used by the selected memory 110 to generate the access data clock signal RDQS. The RDQS signal is provided to the controller 10 by the memory 110 performing the read operation for timing the provision of the read data to the controller 10. The controller 10 may receive read data using the RDQS signal.

When an activate command and a write command and associated address are provided by the controller 10 to the memory system 105, the memory 110 selected by the select signal receives the command and associated address and performs a write operation to write data from the controller 10 to a memory location corresponding to the associated address. In preparation for the selected memory 110 to receive write data from the controller 10, the controller provides valid WCK and WCKF signals to the memory system 105. The WCK and WCKF signals may be used by the selected memory 110 to generate internal clock signals for timing the operation of the circuitry receiving the write data. Data is provided by the controller 10 and the selected memory 110 receives write data from the WCK and WCKF signals, the write data being written to the memory corresponding to the memory address.

Fig. 2 is a block diagram of an apparatus according to an embodiment of the present disclosure. The apparatus may be a semiconductor device 200 and will be referred to as such. In some embodiments, the semiconductor device 200 may include, but is not limited to, a memory, such as, for example, an LPDDR memory integrated into a single semiconductor die. In some embodiments of the present disclosure, the semiconductor die may contain only the semiconductor device 200. In some embodiments of the present disclosure, a semiconductor die may contain a semiconductor device 200 embedded with other systems integrated on the same semiconductor die. In some embodiments of the present disclosure, the semiconductor device 200 may be included in the memory system 105 of fig. 1. For example, each of the memories 110 may include a semiconductor device 200.

The semiconductor device 200 may include a memory array 250. The memory array 250 includes a plurality of memory banks, each of which includes a plurality of word lines WL, a plurality of bit lines BL, and a plurality of memory cells MC arranged at intersections of the plurality of word lines WL and the plurality of bit lines BL. Selection of the word line WL is performed by the row decoder 240 and selection of the bit line BL is performed by the column decoder 245. The Sense Amplifiers (SAMP) are positioned for their corresponding bit lines BL and are connected to at least one respective local I/O line pair (LIOT/B) which is in turn coupled to at least one respective main I/O line pair (MIOT/B) through a Transmission Gate (TG) acting as a switch.

The semiconductor device 200 may employ a plurality of external terminals (e.g., pins) including command/address terminals coupled to a command/address bus to receive command and address signals CA. The CA signal may be a multilevel signal representing a command and an address. For example, the CA signals may represent commands and addresses having a command structure that includes command operands and memory addresses.

The command/address input circuit 205 receives the CA signal at the command/address terminal and provides an address signal and provides a command signal ICMD to the address decoder 212 and the command decoder 215, respectively. The address signal and the command signal are based on a combination of values of the multilevel CA signal received by the command/address input circuit 205. The address decoder 212 receives address signals and provides decoded row address signals XADD to a row decoder 240 and decoded column address signals YADD to a column decoder 245. The address decoder 212 also provides a bank address signal BADD to the row decoder 240 and the column decoder 245. The command decoder 215 includes circuitry for decoding the command signal ICMD to generate various internal signals and commands for performing operations. For example, the command decoder 215 provides internal signals to control circuitry of the semiconductor device 200 to access the memory array 250 based on the command signals, such as to read data from or write data to the memory array 250 based on a read command or a write command, respectively.

The semiconductor device 200 may further employ a selection terminal for receiving the selection signal CS, a clock terminal for receiving the clock signals CK and CKF, a data clock terminal for receiving the data clock signals WCK and WCKF, data terminals DQ and RDQS, power supply terminals VDD, VSS and VDDQ, and a ZQ calibration terminal (ZQ).

The selection terminal may be provided with a selection signal CS for selecting the semiconductor device 200 to receive the CA signal. For example, when the CS signal is active (e.g., an active high logic level), the semiconductor device 200 is activated to receive the CA signal on a command/address bus (e.g., the command/address bus 115 of fig. 1).

When an activate command is received and provided in time to a bank and row address, and a read command is received and provided in time to a bank and column address, read data is read from the memory array 250 of the memory specified by the address. The command/address input circuit 205 provides activate and read commands to the command decoder 215 and provides addresses to the address decoder 212. The command decoder 215 supplies an internal command to the input/output circuit 260, and the address decoder 212 supplies a decoded address to the row decoder and the column decoder, thereby outputting read data from a memory specified by the address to the outside from the data terminal DQ through the read/write amplifier 255 and the input/output circuit 260 according to the RDQS clock signal.

When an activate command is received and supplied to the bank and row addresses in time, and a write command is received and supplied to the bank and column addresses in time, the write data supplied to the data terminal DQ is written into the memory array 250 of the memory specified by the addresses. The command/address input circuit 205 supplies the activate and write commands to the command decoder 215 and supplies the address to the address decoder 212. The command decoder 215 provides internal commands to the input/output circuitry 260 and the address decoder 212 provides decoded addresses to the row and column decoders so that write data is received by the data receivers in the input/output circuitry 260 and provided through the input/output circuitry 260 and the read/write amplifiers 255 to the memory of the memory array 250 specified by the addresses.

An external clock signal is supplied to the clock terminal and the data clock terminal. The external clock signals CK, CKF, WCK, WCKF may be provided to the clock input circuit 220. The CK signal and CKF signal may be complementary, and the WCK signal and WCKF signal may be complementary. When enabled, an input buffer included in the clock input circuit 220 receives an external clock signal. For example, the input buffer receives the CK and CKF signals when enabled by the CKE signal from the command decoder 215, and receives the WCK and WCKF signals when enabled by the WCKIBEN signal from the command decoder 215. The clock input circuit 220 may receive an external clock signal to generate internal clock signals ICK and IWCK and IWCKF. The internal clock signals ICK and IWCK and IWCKF are provided to the internal clock circuit 230. The internal clock circuit 230 includes circuitry that provides various phase and frequency controlled internal clock signals IWCKn based on the received internal clock signals. The multiphase clock signal IWCKn may be provided to the input/output circuit 260 for controlling the output timing of read data and the input timing of write data.

Power supply potentials VDD and VSS are supplied to the power supply terminals. These power supply potentials VDD and VSS are supplied to the internal voltage generator circuit 270. The internal voltage generator circuit 270 generates respective internal potentials VPP, VOD, VARY, VPERI, etc. and a reference potential ZQVREF based on the power supply potentials VDD and VSS. The internal potential VPP is mainly used in the row decoder 240, the internal potentials VOD and VARY are mainly used in the sense amplifiers included in the memory array 250, and the internal potential VPERI is used in many other circuit blocks. The reference potential ZQVREF is used in the ZQ calibration circuit 265.

The power supply terminal is also supplied with a power supply potential VDDQ. The power supply potential VDDQ is supplied to the input/output circuit 260 together with the power supply potential VSS. In the embodiment of the present disclosure, the power supply potential VDDQ may be the same potential as the power supply potential VDD. In another embodiment of the present disclosure, the power supply potential VDDQ may be a potential different from the power supply potential VDD. However, the dedicated power supply potential VDDQ is used for the input/output circuit 260 so that power supply noise generated by the input/output circuit 260 does not propagate to other circuit blocks.

The calibration terminal ZQ is connected to a ZQ calibration circuit 265. When activated by the ZQ calibration command ZQ _ com, the ZQ calibration circuit 265 performs a calibration operation with reference to the impedance of the RZQ and the reference potential ZQVREF. The impedance code ZQCODE obtained through the calibration operation is provided to the input/output circuit 260, and thus specifies the impedance of an output buffer (not shown) included in the input/output circuit 260.

Fig. 3 is a block diagram of a multi-level input buffer 310 and a command and address input decoder circuit 320 according to an embodiment of the present disclosure. In some embodiments of the present disclosure, the multi-level input buffer 310 and the command and address input decoder circuit 320 may be included in the command/address input circuit 205 of the semiconductor device 200 of fig. 2.

The multi-level input buffer 310 includes multi-level input buffer circuits 315(0) -315(n), where n is a non-zero integer. Each of input buffer circuits 315 receives a respective command/address (CA) signal CA 0-CAn. For example, input buffer circuitry 315(0) receives command/address signal CA0, input buffer circuitry 315(1) receives command/address signal CA1, and so on. Each of the CA signals may be provided on a respective command/address terminal. For example, in some embodiments of the present disclosure, the respective terminal is a respective one of the command/address terminals of the semiconductor device 200 of fig. 2.

In some embodiments of the present disclosure, the CA signal is a multilevel input signal. For example, as detected by input buffer circuit 315, the command/address signals have respective voltage levels corresponding to one of a plurality of different voltage ranges. In some embodiments of the present disclosure, the CA signal may have a respective voltage level corresponding to one of three different voltage ranges (e.g., three-level signaling). In other embodiments of the present disclosure, the command/address signals may have respective voltage levels corresponding to one of four different voltage ranges (e.g., four-level signaling) in some embodiments of the present disclosure. The present disclosure is not intended to be limited to three-level or four-level signaling and, more generally, is not intended to be limited to any particular amount of level signaling.

The input buffer circuit 315 provides an output signal CAn _ H and an output signal CAn _ L having logic levels based on the respective CAn signals. For example, input buffer circuit 315(0) provides the CA0_ H signal and the CA0_ L signal having logic levels based on the voltage level of the CA0 signal, input buffer circuit 315(1) provides the CA1_ H signal and the CA1_ L signal having logic levels based on the voltage level of the CA1 signal, and so on.

In some embodiments of the present disclosure, the pair of the CAn _ H and CAn _ L signals may have respective logic levels that represent values based on the respective CA signals. For example, a low logic level CAn _ H signal and a low logic level CAn _ L (i.e., "00") may represent a value of 0; the low logic level CAn _ H signal and the high logic level CAn _ L (i.e., "01") may represent a value of 1; and a high logic level CAn _ H signal and a high logic level CAn _ L (i.e., "11") may represent a value of 2. The values represented by the CAn _ H and CAn _ L signals may correspond to the values of the respective CA signals.

The output signals CAn _ H and CAn _ L may be provided to the command and address input decoder circuit 320. The input decoder circuit 320 provides decoded signals CAO0-CAO2 having respective logic levels that are based on the logic levels of the CAn _ H and CAn _ L signals. For example, input decoder circuit 320 may provide decoded signals CAO0-CAO2 having respective logic levels based on the logic levels of the CA0_ H and CA0_ L and CA1_ H and CA1_ L signals provided by input buffer circuit 315(0) and input buffer circuit 315(1), respectively. In some embodiments of the present disclosure, as shown in fig. 8, the input decoder circuit 320 may provide decoded signals CAO0-CAO2, which will be described below, based on respective logic levels of the CA0_ H and CA0_ L and the CA1_ H and CA1_ L signals. The CAO0-CAO2 may represent three bits of information, one bit for each decoded signal.

The decoded signals CAO0-CAO2 may be provided to an address decoder and/or a command decoder (e.g., address decoder 212 and/or command decoder 215 of FIG. 2), respectively. As previously described, the address decoder and/or the command decoder receives the signals and provides internal address and control signals to perform operations corresponding to the CA signals.

As previously described, in some embodiments of the present disclosure, the input buffer circuit 315 receives a multi-level CA signal. A multilevel signal may be used to represent a greater amount of information than, for example, a binary (i.e., two-level) signal having two different voltage levels to represent one bit of information. In contrast, in an example including two input buffer circuits 315 (e.g., input buffer circuits 315(0) and 315(1)) that each receive a respective three-level CA signal, the two multi-level signals may represent three bits of data (as compared to two bits of data representing a binary signal). Scaled from two input buffer circuits 315 to, for example, six input buffer circuits 315 each receiving a respective three-level CA signal, the six signals may represent nine bits of data as compared to six bits of data for six binary signals.

Using multi-level signals for CA signals, for example, may allow the same number of command and/or address spaces to be represented using fewer signals (as compared to binary signals) or a greater number of command and/or address spaces to be represented using the same number of signals. In the former instance, the number of external terminals (e.g., command/address terminals) may be reduced without reducing the set of command and/or address spaces. In the latter example, the number of external terminals may be maintained, but an extended set of command and/or address spaces is provided.

Fig. 4 is a schematic diagram of a multi-level input buffer circuit 400 according to an embodiment of the present disclosure. In some embodiments of the present disclosure, the multi-level input buffer circuit 400 may be included in the multi-level input buffer circuit 315 of fig. 3.

The multilevel input buffer circuit 400 includes a buffer circuit 410 and a buffer circuit 420. The buffer circuit 410 is supplied with a (high) reference voltage Vref _ H, and the buffer circuit 420 is supplied with a (low) reference voltage Vref _ L. The Vref _ H voltage is greater than the Vref _ L voltage. The buffer circuit 410 and the buffer circuit 420 are also supplied with command/address signals CA. Buffer circuit 410 provides output signal CA _ H based on the CA signal and the Vref _ H voltage, and buffer circuit 420 provides output signal CA _ L based on the CA signal and the Vref _ L voltage. For example, buffer circuit 410 provides the CA _ H signal having a logic level of voltage relative to the Vref _ H voltage based on the CA signal, and buffer circuit 420 provides the CA _ L signal having a logic level of voltage relative to the Vref _ L voltage based on the CA signal.

In an example operation, the buffer circuit 410 provides a high logic level CA _ H signal when the voltage of the CA signal is greater than the Vref _ H voltage, and provides a low logic level CA _ H signal when the voltage of the CA signal is less than the Vref _ H voltage; and the buffer circuit 420 provides a high logic level CA _ L signal when the voltage of the CA signal is greater than the Vref _ L voltage, and provides a low logic level CA _ L signal when the voltage of the CA signal is less than the Vref _ L voltage.

The resulting CA _ H and CA _ L signals may be decoded by a command and address input decoder circuit (e.g., command and address input decoder circuit 320 of fig. 3) along with other CA _ H and CA _ L signals to provide decoded output signals.

Fig. 5 is a graph of the relationship between a three-level input signal and the logic level of an output signal representing the value of the three-level input signal according to an embodiment of the present disclosure. In some embodiments of the present disclosure, the relationship of fig. 5 may be provided by the multilevel input buffer circuit 400 of fig. 4. In such embodiments of the present disclosure, the three-level input signal may be represented by the command/address signal CA.

The relationship of the three-level input signal and the logic value of fig. 5 will be described with reference to the multi-level input buffer circuit 400.

When the voltage of the CA signal is less than the (low) reference voltage Vref _ L (and also necessarily less than the (high) reference voltage Vref _ H), the buffer circuit 420 provides a low logic level CA _ L signal (i.e., "0"), and the buffer circuit 410 also provides a low logic level CA _ H signal (i.e., "0"). "00" of the CA _ H and CA _ L signals corresponds to a value of 0. Thus, a multilevel CA signal that is less than Vref _ L and Vref _ H corresponds to a value of 0 and may be represented by "00" for the CA _ H and CA _ L signals.

When the voltage of the CA signal is less than the Vref _ H voltage but greater than the Vref _ L voltage, the buffer circuit 420 provides a low logic level CA _ L signal (i.e., "0"), and the buffer circuit 410 provides a high logic level CA _ H signal (i.e., "1"). "10" of the CA _ H and CA _ L signals corresponds to a value of 1. Thus, a multi-level CA signal that is less than Vref _ H and greater than Vref _ L corresponds to a value of 1 and may be represented by "10" of the CA _ H and CA _ L signals.

When the voltage of the CA signal is greater than the Vref _ H voltage (and also necessarily greater than the Vref _ L voltage), buffer circuit 420 provides a high logic level CA _ L signal (i.e., "1"), and buffer circuit 410 also provides a high logic level CA _ H signal (i.e., "1"). "11" of the CA _ H and CA _ L signals corresponds to a value of 2. Thus, a multilevel CA signal greater than Vref _ L and Vref _ H corresponds to a value of 2 and may be represented by "11" of the CA _ H and CA _ L signals.

As shown in the previous example, the three-level CA signal may represent three different values (e.g., values 0, 1, and 2). Each of the values may be represented by a logic level of the pair of output signals CA _ H and CA _ L.

Fig. 6 is a graph of the voltage of a three-level input signal versus the logical value represented by the three-level input signal according to an embodiment of the present disclosure. In some embodiments of the present disclosure, the relationship of fig. 6 may represent a relationship between the three-level signal of fig. 5 and a logic value. In some embodiments of the present disclosure, the relationship of fig. 6 may be provided by the multilevel input buffer circuit 400 of fig. 4. In such embodiments of the present disclosure, the voltage shown in fig. 6 may represent the voltage of the command/address signal CA.

The voltage to logic value relationship of the three-level input signal of fig. 6 will be described with reference to the three-level signal to logic value relationship of fig. 5.

The voltage of the three-level input signal which is smaller than the (low) reference voltage Vref _ L (and which is also necessarily smaller than the (high) reference voltage Vref _ H) corresponds to a logic value 0.

The voltage of the three-level input signal, which is less than the Vref _ H voltage but greater than the Vref _ L voltage, corresponds to a logic value of 1.

A voltage of the three-level input signal that is greater than the Vref _ H voltage (and also necessarily greater than the Vref _ L voltage) corresponds to a logic value of 2.

Fig. 7 is a schematic diagram of a multi-level input buffer 700 including a pair of multi-level input buffer circuits 715(0) and 715(1), according to an embodiment of the disclosure. In some embodiments of the present disclosure, the pair of multi-level input buffer circuits 715(0) and 715(1) may be included in the command/address input circuit 205 of the semiconductor device 200 of fig. 2. In some embodiments of the present disclosure, the pair of multi-level input buffer circuits 715(0) and 715(1) may be included in the multi-level input buffer 310 of fig. 3.

The multi-level input buffer circuit 715(0) includes a buffer circuit 710(0) and a buffer circuit 720 (0). Buffer circuit 710(0) is supplied with a (high) reference voltage Vref _ H, and buffer circuit 720(0) is supplied with a (low) reference voltage Vref _ L. The Vref _ H voltage is greater than the Vref _ L voltage. Buffer circuits 710(0) and 720(0) are also provided with command/address signal CA 0. The multi-level input buffer circuit 715(1) includes a buffer circuit 710(1) and a buffer circuit 720 (1). Buffer circuit 710(1) is provided with the Vref _ H voltage, and buffer circuit 720(1) is provided with the Vref _ L voltage. Buffer circuits 710(1) and 720(1) are also provided with command/address signal CA 1. The CA0 and CA1 signals may be multilevel input signals (e.g., three-level signals).

Buffer circuit 710(0) provides output signal CA0_ H based on the CA0 signal and the Vref _ H voltage, and buffer circuit 720(0) provides output signal CA0_ L based on the CA0 signal and the Vref _ L voltage. For example, buffer circuit 710(0) provides a CA _ H signal having a logic level of voltage relative to the Vref _ H voltage based on the CA0 signal, and buffer circuit 720(0) provides a CA _ L signal having a logic level of voltage relative to the Vref _ L voltage based on the CA0 signal.

Buffer circuit 710(1) provides output signal CA1_ H based on the CA1 signal and the Vref _ H voltage, and buffer circuit 720(1) provides output signal CA1_ L based on the CA1 signal and the Vref _ L voltage. Buffer circuits 710(1) and 720(1) may operate in a manner similar to previously described buffer circuits 710(0) and 720 (0).

As previously described with reference to fig. 3, in an example including two input buffer circuits each receiving a respective three-level command/address signal, the two signals may represent three bits of data. In such embodiments of the present disclosure, a pair of input buffer circuits may be included for each pair of CA signals.

Example operation of two input buffer circuits each receiving a respective three-level command/address signal will be described with reference to a pair of multi-level input buffer circuits 715(0) and 715 (1). In example operation, the CA0_ H and CA0_ L signals from input buffer circuitry 715(0) and the CA1_ H and CA1_ L signals from input buffer circuitry 715(1) are provided to command and address input decoder circuitry, e.g., command and address input decoder circuitry 320 of fig. 3. As previously described, the command and address input decoder circuits provide decoded signals CAO0, CAO1, and CAO2 that represent three bits of data.

In some embodiments of the present disclosure, two three-level command/address (CA) signals may be generated by a pair of multi-level input buffer circuits (e.g., multi-level input buffer circuits 715(0) and 715(1)) and command and address input decoder circuits (e.g., command and address input decoder circuit 320) to provide the following three-bit information, CAO0-CAO 2:

example of CA decoding:

when CA1 ═ 0 → CAO2 ═ L, CAO1 ═ CA0_ H, CAO0 ═ CA0_ L

When CA1 ═ 2 → CAO2 ═ H, CAO1 ═ CA0_ H, CAO0 ═ CA0_ L

When CA1 ═ 1 → CAO2 ═ CA0_ H, CAO1 ═ H, CAO0 ═ L

Fig. 8 is a relationship diagram between two three-level input signals CA1 and CA0, output signals CA1_ H and CA1_ L and CA0_ H and CA0L, and decoded signals CAO2-CAO0 according to an embodiment of the present disclosure. The decoded signals CAO2-CAO0 may represent three bits of data. The relationship of fig. 8 may be provided by the previously described example of CA decoding.

In some embodiments of the present disclosure, the relationship of fig. 8 may be provided by the pair of multilevel input buffer circuits 715(0) and 715(1) of fig. 7 and the command and address input decoder circuit 320 of fig. 3.

The relationship of fig. 8 will be described with reference to multilevel input buffer circuits 715(0) and 715(1) and command and address input decoder circuit 320.

Fig. 8 shows CA1 and CA0 signals, which may have one of three different values (e.g., 0, 1, or 2), and output signals CA1_ H and CA1_ L and CA0_ H and CA0_ L, which are provided by input buffer circuit 715(1) and input buffer circuit 715(0), respectively. The output signal may have a low logic level "L" (e.g., "0" bit) or a high logic level "H" (e.g., "1" bit).

In one example, as shown in the relationship of fig. 8, when the voltage of the CA1 signal corresponds to a value of 0 and the voltage of the CA0 signal corresponds to a value of 1, the resulting high and low output signals are CA1_ H ═ L and CA1_ L ═ L, and CA0_ H ═ L and CA0_ L ═ H (e.g., provided by multi-level input buffer circuits 715(1) and 715 (0)). In another example, when the voltage of the CA1 signal corresponds to a value of 2 and the voltage of the CA0 signal corresponds to a value of 1, the resulting high and low output signals are CA1_ H and CA1_ L H, and CA0_ H and CA0_ L H. Fig. 8 also shows other combinations of CA1 and CA0 signals and corresponding output signals CA1_ H and CA1_ L and CA0_ H and CA0_ L.

As shown in fig. 8, the output signals CA1_ H and CA1_ L and CA0_ H and CA0_ L may be decoded by the command and address input decoder circuit 320 to provide decoded signals CAO2, CAO1, and CAO 0. The decoded signal may have a low logic level "L" (e.g., "0" bit) or a high logic level "H" (e.g., "1" bit).

In one example, as shown in the relationship of fig. 8, when CA1_ H-L and CA1_ L-L, and CA0_ H-L and CA0_ L-H (which is one of the previously described examples), the corresponding decoded signals are CAO 2-L, CAO 1-L and CAO 0-H. In another example, when CA1_ H and CA1_ L H, and CA0_ H and CA0_ L H (this is another example described previously), the corresponding decoded signals are CAO 2H, CAO 1L and CAO 0H. Other combinations of the high and low output signals CA1_ H and CA1_ L and CA0_ H and CA0_ L and the corresponding CAO2, CAO1, and CAO0 signals are also shown in fig. 8.

Fig. 9 is a timing diagram illustrating various signals for receiving commands and/or addresses at a semiconductor device according to an embodiment of the disclosure. In some embodiments of the present disclosure, the semiconductor device 200 of fig. 2 may receive commands and/or addresses as shown in the timing diagram of fig. 9. For example, the signal may be provided to the semiconductor device by a controller (e.g., controller 10 of fig. 1). In some embodiments of the present disclosure, memory 110 of FIG. 1 receives the commands and/or addresses shown in the timing diagram of FIG. 9.

Fig. 9 shows the system clock signals CK and CKF, the selection signal CS, the command and address signal CA, and the command generated based on the CA signal CA. The CA signal may be a multi-level input signal (e.g., a three-level signal, a four-level signal, a two-level signal, etc.). The CK and CKF clock signals may be complementary. In the example of FIG. 9, the commands generated by the CA signals are the active commands ACT-1 and ACT-2.

In some embodiments of the present disclosure, the command may contain two parts: the first command portion is received when the CK clock signal transitions from a low clock level to a high clock level (e.g., a rising clock edge R of the CK clock signal), and the second command portion is received when the CK clock signal transitions from a high clock level to a low clock level (e.g., a falling clock edge F of the CK clock signal). The first command portion may contain command operands and addresses, and the second command portion may contain addresses. The command operands may be decoded to identify the corresponding command (e.g., an ACT-1 or ACT-2 command), and the address may comprise a memory address, such as a bank address, a row address, and so forth.

Prior to time T0, the select signal CS is active (e.g., an active high logic level) and the multi-level CA signal corresponding to the first command portion is active. At time T0, the CK clock signal transitions to a high clock level and the rising edge R0 causes the CA signal to be received by, for example, the command/address input circuit 205, the multi-level input buffer 310, the input buffer 400, the multi-level input buffer 700, and so on. The command operands of the first command portion are decoded to identify the ACT-1 command. The CA signal corresponding to the second command portion is active before the falling clock edge F0 of the CK clock signal. The falling edge F0 of the CK clock signal causes the CA signal to be received. The bank address of the second command portion identifies the memory bank to which the ACT-1 command is directed. Other addresses contained in the first command portion and the second command portion may identify memory cells (e.g., row addresses) in the active bank to be accessed.

Before time T1, the selection signal CS is active, and the multilevel CA signal corresponding to the first command portion is active. At time T1, the CK clock signal transitions to a high clock level and the rising edge R1 causes the CA signal to be received. The command operands of the first command portion are decoded to identify the ACT-2 command. The CA signal corresponding to the second command portion is active before the falling clock edge F1 of the CK clock signal. The falling edge F1 of the CK clock signal causes the CA signal to be received. The bank address of the second command portion identifies the memory bank to which the ACT-2 command is directed. Other addresses contained in the first command portion and the second command portion may identify memory cells in the active bank to be accessed.

Prior to time T2, the CS signal is inactive (e.g., an inactive low logic level), and the CA signal corresponds to the deselect command DES. At time T2, the rising edge R2 of the CK clock signal causes the CA signal to be received and decoded to identify the DES command. The DES command causes the activated bank to be deactivated.

As previously described, using multi-level signals, for example, for command/address signals may allow for fewer signals to be used to represent the same number of commands and/or addresses, or the same number of signals to be used to represent a greater number of commands and/or addresses.

FIG. 10 is a diagram of a command structure 1000, e.g., commands and addresses for multi-level command and address signals, according to an embodiment of the disclosure. In some embodiments of the present disclosure, the command structure 1000 may be used with the system 100 of FIG. 1. For example, the multi-level command and address signals provided by controller 10 to memory system 105 may represent commands and addresses having a command structure as shown in FIG. 10. In some embodiments of the present disclosure, the command structure 1000 may be used with the semiconductor device 200 of fig. 2. For example, the multi-level command and address signals received by the semiconductor device 200 may represent commands and addresses having a command structure as shown in fig. 10.

The command structure 1000 shows a select signal CS provided to a select terminal and multi-level command and address signals CA0-CA5 provided to command/address terminals. In some embodiments of the present disclosure, a three-level CA signal is provided to the command/address terminal. The CA signal contains a multi-purpose output (MPO) that can be used for additional features. For example, in some embodiments of the present disclosure, MPO may be used to provide Error Correction Code (ECC) transparency to a controller (e.g., controller 10 of fig. 1). In some embodiments of the present disclosure, MPO may additionally or alternatively be used to provide on-demand feedback to the controller (e.g., provide uncorrectable error reports to the controller for WRITE Link ECC). MPO may be used for other features in other embodiments of the disclosure. For example, in some embodiments of the present disclosure, additional command and address signals CA6 may be provided instead of MPO to provide an extended set of command and/or address ranges.

The example commands and addresses shown in command structure 1000 include activate commands ACT-1 and ACT-2. Each of the ACT-1 and ACT-2 commands includes a first portion and a second portion. The first portion is received on a rising edge of a clock signal (e.g., a CK clock signal) and the second portion is received on a falling edge of the clock signal. The first portions of the ACT-1 and ACT-2 commands may contain command operands and addresses. The command operand may identify the command, and the address may be a portion of the memory address pointed to by the activate command. The second portion may contain addresses, such as the address of the memory bank to which the activate command is directed, and other portions of the memory address to which the activate command is directed. The ACT-1 and ACT-2 commands may be paired such that the full memory address is provided by the portion of the memory address contained in the activate command.

Referring to the command structure 1000, the first portion of the ACT-1 command is received at the rising clock edge R of the CK clock signal when the CS signal is active and when the multilevel command signal CA0 is 1 and CA1 is 0 (e.g., the command operand is 10). Multilevel signals CA2 and CA3 represent three bits R [18:20] of a memory address (e.g., a row address), and multilevel signals CA4 and CA5 represent the other three bits R [21:23] of the memory address. The second portion of the ACT-1 command is received at the falling clock edge F of the CK clock signal. The second portion of the ACT-1 command includes a memory address (e.g., a memory bank address and a row address). For example, multilevel signals CA0 and CA1 represent three bits BA [0:2] of the bank address, and multilevel signals CA2 and CA3 represent the other two bits BA [3:4] and one bit flag of the bank address. The multi-level signals CA4 and CA5 represent the other three bits R [15:17] of the memory address.

After the second portion of the ACT-1 command, the first portion of the ACT-2 command is received at the rising clock edge R of the CK clock signal when the CS signal is active and the multilevel command signal CA0 is 1 and CA1 is 1 (e.g., the command operand is 11). Multilevel signals CA2 and CA3 represent three bits R [9:11] of a memory address, and multilevel signals CA4 and CA5 represent the other three bits R [12:14] of the memory address. The second portion of the ACT-2 command is received at a falling clock edge F of the CK clock signal. The second portion of the ACT-2 command includes a memory address (e.g., a row address). For example, multi-level signals CA0 and CA1 represent three bits R [0:2] of a memory address, multi-level signals CA2 and CA3 represent the other three bits R [3:5] of a memory address, and multi-level signals CA4 and CA5 represent the other three bits R [6:8] of a memory address.

Upon receiving the ACT-1 and ACT-2 commands, the memory banks corresponding to memory bank addresses BA [0:4] are activated and the memory corresponding to memory addresses R [0:23] are ready for a memory operation (e.g., a memory access operation).

FIG. 11 is a block diagram of a multi-level input buffer 1110, a Command and Address (CA) input decoder circuit 1120, and an output signal (CA _ H/L) latch 1130, according to an embodiment of the present disclosure. In some embodiments of the present disclosure, the multi-level input buffer 1110, the command and address input decoder circuit 1120, and the high and low output signal latch 1130 may be included in the command/address input circuit 205 of the semiconductor device 200 of fig. 2.

In some embodiments of the present disclosure, multi-level input buffer 1110, CA input decoder circuit 1120, and CA _ H/L signal latch 1130 may be used with the example commands of fig. 10 and 12 to provide internal signals representing non-binary values (e.g., 0, 1, and 2) and binary values (e.g., 0 and 1) from multi-level input signals (e.g., CA0 and CA 1). Signals representing non-binary values and/or binary values may be provided to a command decoder and/or an address decoder (e.g., command decoder 215 and address decoder 212 of FIG. 2). For example, in some embodiments of the present disclosure, output signals (e.g., CAO0_ H/L and CAO1_ H/L) may be provided by CA _ H/L latch 1130 to a command decoder, and CA input decoder circuit 1120 may provide decoded signals (e.g., CAO0-CAO2) to an address decoder. In some embodiments of the present disclosure, the output signal is provided by CA _ H/L latch 1130 on the rising edge of the clock signal (e.g., CK _ R clock is active) and the decoded signal is provided by CA input decoder circuit 1120 on the falling edge of the clock signal (e.g., CK _ F clock is active).

In embodiments of the present disclosure in which more than two multi-level signals are used, additional multi-level input buffers, CA input decoder circuits, and/or CA _ H/L signal latches in some or all of the multi-level input buffer 1110, CA input decoder circuit 1120, and/or CA _ H/L signal latch 1130 may be included. For example, for each pair of multi-level CA signals (e.g., CA2-CA5), an additional multi-level input buffer 1110 may be included. Additional CA input decoder circuits may be included and/or may be combined together into one CA input decoder circuit 1120 to provide a decoded signal. Additional CA H/L signal latches 1130 are included and/or may be combined together into one CA H/L signal latch 1130 to provide the CA H/L signal.

In some embodiments of the present disclosure, the multi-level input buffer 1110 may include the multi-level input buffer 310 of fig. 3 or the multi-level input buffer 700 of fig. 7. In some embodiments of the present disclosure, the multi-level input buffer circuit 1115(0) and/or 1115(1) may include the multi-level input buffer circuit 315 of fig. 3, the multi-level input buffer circuit 400 of fig. 4, or the multi-level input buffer circuit 715 of fig. 7. In some embodiments of the present disclosure, the multi-level input buffer 1110 may provide output signals as described with reference to the relationship between the two three-level input signals CA1 and CA0, the output signals CA1_ H and CA1_ L and CA0_ H and CA0L of fig. 8, and the decoded signals CAO2-CAO 0.

In some embodiments of the present disclosure, CA input decoder circuit 1120 may comprise command and address input decoder circuit 320 of fig. 3. In some embodiments of the present disclosure, CA input decoder circuit 1120 may provide decoded signals as described with reference to the relationship between the two three-level input signals CA1 and CA0, the high and low output signals CA1_ H and CA1_ L, and CA0_ H and CA0L of fig. 8, and the decoded signals CAO2-CAO 0.

FIG. 12 is a diagram of a command structure 1200, e.g., commands and addresses for multi-level command and address signals, according to an embodiment of the disclosure. In some embodiments of the present disclosure, the command structure 1200 may be used with the system 100 of FIG. 1. For example, the multi-level command and address signals provided by controller 10 to memory system 105 may represent commands and addresses having a command structure as shown in FIG. 12. In some embodiments of the present disclosure, the command structure 1200 may be used with the semiconductor device 200 of fig. 2. For example, the multi-level command and address signals received by the semiconductor device 200 may represent commands and addresses having a command structure as shown in fig. 12.

The example commands illustrated in command structure 1200 include the activate commands ACT-1 and ACT-2 previously described with reference to FIG. 10. Fig. 12 contains further examples of commands that may be identified by the multilevel command and the address signal CA. For example, FIG. 12 includes commands precharge PRE, Refresh REF, write 16-bit WR16, write 32-bit WR32, mask write MWR, read 16-bit RD16, and read 32-bit RD 32. The example commands are not intended to limit the scope of the present disclosure to the specific commands shown in fig. 12 and are provided as examples only.

As with the command structure of FIG. 10, the command structure of FIG. 12 shows the select signal CS being provided to the select terminal and the multilevel command and address signals CA0-CA5 being provided to the command/address terminal. In some embodiments of the present disclosure, three-level command and address signals are provided to the command/address terminals. As previously described, the command address signal includes a multi-purpose output (MPO) that may be used for additional features. However, for example, in some embodiments of the present disclosure, additional command and address signals CA6 may be provided instead of MPO to provide an extended set of command and/or address ranges.

Many of the example commands of FIG. 12 have a structure similar to that of the previously described activate commands ACT-1 and ACT-2. For example, many of the commands include a first portion and a second portion. The first portion is received on a rising edge R of a clock signal (e.g., CK clock signal) and the second portion is received on a falling edge F of the clock signal. The first portion of the command may contain command operands and addresses, and the second portion may contain addresses. The command operand may identify the command, and the address may be the memory address to which the command is directed, e.g., the memory bank and the column of memory to which the command is directed. For these example commands, such as WR16, WR32, MWR, RD16, and RD32, the two portions define the command and provide memory addresses BA [0:4] for the memory bank address and C [0:5] for the column address.

Other ones of the example commands of FIG. 12 may contain modified structures. For example, referring to example commands PRE and REF, the first portion contains command operands of multi-level signals CA0-CA3 and characteristic settings of multi-level signals CA4 and CA5, and the second portion contains memory addresses (e.g., memory bank addresses RA [0:4]) of multi-level signals CA0-CA3 to which the commands are directed and characteristic settings of multi-level signals CA4 and CA 5.

Referring to the example commands of fig. 10 and 12, the multi-level CA0-CA5 signals are used to provide command operands to identify commands and to provide memory addresses (e.g., memory bank addresses, row addresses, and column addresses (although not shown)). In some embodiments of the present disclosure, the command operands may be represented by non-binary values (e.g., 0, 1, 2, etc.), and the memory addresses may be represented by binary values (e.g., bits 0 and 1). In some embodiments of the present disclosure, the command operands and memory addresses may be represented by binary values. In some embodiments of the present disclosure, the command operands and memory addresses may be represented by non-binary values.

In some embodiments of the present disclosure, some or all of the multi-level CA signals may represent non-binary values. In some embodiments of the present disclosure, some or all of the multi-level CA signals may represent binary values. In some embodiments of the present disclosure, the multi-level CA signal may represent a combination of non-binary values and binary values.

In some embodiments of the present disclosure, the multi-level input buffers and multi-level input buffer circuits (e.g., multi-level input buffer 310 and multi-level input buffer circuit 315 of fig. 3, multi-level input buffer circuit 400 of fig. 4, multi-level input buffer 700 and multi-level input buffer circuit 715 of fig. 7) may provide output signals (e.g., high output signal CA _ H and low output signal CA _ L) representing non-binary values of the multi-level signals (e.g., a relationship between the three-level input signals of fig. 5 and the logic values represented by the three-level input signals). In some embodiments of the present disclosure, a command and address input decoder circuit (e.g., command and address input decoder circuit 320) may provide a decoded signal (e.g., CAOn) representing a binary value, for example, based on an output signal from a multi-level input buffer (e.g., a relationship between two three-level input signals, the output signal, and the decoded signal of fig. 8).

The details of the example commands shown in fig. 10 and 12 may be modified without departing from the scope of the present disclosure. For example, the number of bits representing a memory address may be modified, the command may have more or fewer portions, the information contained in the portions may be different, the number of multilevel signals used for the command may be more or fewer, additional and/or alternative commands, different command operands, etc., may be included and still be within the scope of the present disclosure.

Certain details are described to provide a sufficient understanding of examples of the disclosure. It will be apparent, however, to one skilled in the art that the examples of the present disclosure may be practiced without these specific details. Furthermore, the specific examples of the present disclosure described herein should not be construed as limiting the scope of the disclosure to these specific examples. In other instances, well-known circuits, control signals, timing schemes, and software operations have not been shown in detail in order to avoid unnecessarily obscuring the present disclosure. In addition, terms such as "coupled" or "coupled" mean that two components can be electrically coupled, either directly or indirectly. Indirect coupling may imply that two components are coupled through one or more intermediate components.

From the foregoing, it will be appreciated that, although specific embodiments of the disclosure have been described herein for purposes of illustration, various modifications may be made without deviating from the spirit or scope of the disclosure. Thus, the scope of the present disclosure should not be limited by any of the specific embodiments described herein.