阅读说明：本技术 一种高速互联结构 (High-speed interconnection structure ) 是由 张武平 宋小平 刘成刚 于 2020-12-25 设计创作，主要内容包括：本发明涉及互联结构技术领域,提供了一种高速互联结构。用于直流信号传输的部分设置有直流信号管脚,所述直流信号管脚由上层管脚和下层管脚构成,或者由单独的上层管脚构成,或者由单独的下层管脚构成；用于高频传输的部分采用高频阻抗匹配的金属图案和金丝组合实现,所述金属图案与所述金丝组合构成补偿结构,所述补偿结构使得高速互联结构的高频阻抗能够连续的完成过渡。本发明跟传统焊接软带的结构相比,具有信号线短、损耗低、反射小等优点。(The invention relates to the technical field of interconnection structures and provides a high-speed interconnection structure. The part for transmitting the direct current signal is provided with a direct current signal pin, and the direct current signal pin consists of an upper layer pin and a lower layer pin, or consists of an independent upper layer pin, or consists of an independent lower layer pin; the part for high-frequency transmission is realized by combining a metal pattern matched with high-frequency impedance and a gold wire, the metal pattern and the gold wire are combined to form a compensation structure, and the compensation structure enables the high-frequency impedance of the high-speed interconnection structure to be continuously transited. Compared with the traditional structure of welding the soft belt, the invention has the advantages of short signal line, low loss, small reflection and the like.)

1. A high speed interconnect structure, comprising:

the part for transmitting the direct current signals is provided with a direct current signal pin, the direct current signal pin is composed of an upper layer pin and a lower layer pin, or the direct current signal pin is composed of an independent upper layer pin, or the direct current signal pin is composed of an independent lower layer pin;

the part for high-frequency transmission is realized by combining a metal pattern matched with high-frequency impedance and a gold wire, the metal pattern and the gold wire are combined to form a compensation structure, and the compensation structure enables the high-frequency impedance of the high-speed interconnection structure to be continuously transited.

2. The high-speed interconnect structure of claim 1, wherein the high-speed interconnect structure is used for hermetic shell ceramic parts and/or individual ceramic parts, in particular:

the direct-current signal pins and the metal patterns are arranged on the ceramic part of the tube shell; and/or;

the single ceramic part is provided with the direct-current signal pins and a metal pattern;

wherein the metal pattern is used for completing electrical communication with the corresponding gold wire combination when the ceramic part of the tube shell and/or the single ceramic part are assembled.

3. The high-speed interconnect structure of claim 2, wherein the high-speed interconnect structure specifically comprises:

the direct current signal pin is directly welded and fixed with a golden finger of the PCB, the direct current signal pin not only plays a role in transmitting direct current signals, but also mechanically fixes the PCB and the ceramic part or the single ceramic part of the tube shell together.

4. The high-speed interconnect structure of claim 2, wherein the high-speed interconnect structure specifically comprises:

connecting a plurality of metal patterns in the ceramic part of the tube shell or the single ceramic part with metal wires and the metallization layers with corresponding functions on the PCB; wherein, the PCB metallization layer part is designed with a metal pattern with compensation gold wire parasitic parameters.

5. The high-speed interconnect structure of claim 1, wherein for a metal pattern, a gold wire electrically connected thereto is combined with a bonding wire structure in which the first stub, the long wire and the second stub are arranged.

6. The high-speed interconnect structure of claim 5, wherein the first stub, the long line, and the second stub have the same longitudinal length of the gold wire; and the first stub and the second stub have the same line length.

7. The high-speed interconnect structure according to claim 5, wherein when the corresponding interface impedance is 50 ohms, the metal pattern has an impedance characteristic of 50 ohms at a frequency of 1GHz, and the gold wire combination is specifically:

the first and second stubs each exhibit an equivalent impedance of 0.04 ohms;

the first stub and the second stub each exhibit an equivalent inductance of 0.115 nH;

the long line exhibits an equivalent impedance of 0.085 ohms and a corresponding equivalent inductance of 0.13 nH;

the equivalent capacitance between the metal patterns on the two sides and the metal wire combination is 0.02 pF.

8. The high-speed interconnect structure of claim 7, wherein the high-frequency band applicable to the high-speed interconnect structure is a 100G-400G transmission rate scenario.

9. The high-speed interconnect structure of claim 7, wherein the equivalent circuit of the gold wire is composed of an equivalent inductor, an equivalent resistor, and two equivalent capacitors connected in parallel to the equivalent inductor and the equivalent resistor, respectively, wherein the equivalent inductor is calculated by:

wherein, l is the length of the gold wire, d is the diameter of the gold wire, mu₀Is magnetic permeability in vacuum, mu_rIs goldThe relative permeability of the filament.

10. The high-speed interconnect structure of claim 1, wherein for a metal pattern, a gold wire electrically connected thereto is combined with a bonding wire structure in which the first stub and the second stub are arranged; alternatively, a bonding wire structure in which the first short wires and the long wires are arranged is employed.

[ technical field ] A method for producing a semiconductor device

The invention relates to the technical field of interconnection structures, in particular to a high-speed interconnection structure.

[ background of the invention ]

With the increasing demand of networks, the speed requirements of optical communication networks are higher and higher, and the speed requirements of 100G/400G and higher are on the way.

With the increase of the speed, for the optical component, the traditional circuit connection mode can not meet the existing speed requirement, and a high-reliability solution is urgently needed.

For high-speed devices, there are two ways to interconnect with the PCB: one is a typical soft belt structure with three types of soft belt interconnection as shown in fig. 1, fig. 2 and fig. 3, the soft belt welding mode is influenced by processing precision, mounting precision and solder thickness control, the consistency of high-frequency characteristics is often poor, and batch delivery is influenced, and meanwhile, due to the influence of the soft belt structure, the transmission distance is generally longer, the signal loss is large, and the signal transmission requirement above 56G is difficult to meet.

[ summary of the invention ]

The technical problem to be solved by the embodiment of the invention is that the soft belt welding mode is influenced by the processing precision, the installation precision and the solder thickness control, so that the consistency of high-frequency characteristics is not good, and the batch delivery is influenced.

The embodiment of the invention adopts the following technical scheme:

the invention provides a high-speed interconnection structure, comprising:

the part for transmitting the direct current signals is provided with a direct current signal pin, the direct current signal pin is composed of an upper layer pin and a lower layer pin, or the direct current signal pin is composed of an independent upper layer pin, or the direct current signal pin is composed of an independent lower layer pin;

the part for high-frequency transmission is realized by combining a metal pattern matched with high-frequency impedance and a gold wire, the metal pattern and the gold wire are combined to form a compensation structure, and the compensation structure enables the high-frequency impedance of the high-speed interconnection structure to be continuously transited.

Preferably, the high speed interconnect is used for hermetic shell ceramic parts and/or individual ceramic parts, in particular:

the direct-current signal pins and the metal patterns are arranged on the ceramic part of the tube shell; and/or;

the single ceramic part is provided with the direct-current signal pins and a metal pattern;

wherein the metal pattern is used for completing electrical communication with the corresponding gold wire combination when the ceramic part of the tube shell and/or the single ceramic part are assembled.

Preferably, the high-speed interconnection structure specifically includes:

the direct current signal pin is directly welded and fixed with a golden finger of the PCB, the direct current signal pin not only plays a role in transmitting direct current signals, but also mechanically fixes the PCB and the ceramic part or the single ceramic part of the tube shell together.

Preferably, the high-speed interconnection structure specifically includes:

connecting a plurality of metal patterns in the ceramic part of the tube shell or the single ceramic part with metal wires and the metallization layers with corresponding functions on the PCB; wherein, the PCB metallization layer part is designed with a metal pattern with compensation gold wire parasitic parameters.

Preferably, for one metal pattern, the combination of the gold wires electrically connected with the metal pattern adopts a bonding wire structure in which a first short wire, a long wire and a second short wire are arranged.

Preferably, the first short line, the long line and the second short line have the same length of the gold wire; and the first short line and the second short line have the same line length.

Preferably, when the corresponding interface impedance is 50 ohms, the impedance characteristic presented by the metal pattern is a resistance value of 50 ohms when the frequency is 1GHz, and the gold wire combination is specifically:

the first and second stubs each exhibit an equivalent impedance of 0.04 ohms;

the first stub and the second stub each exhibit an equivalent inductance of 0.115 nH;

the long line exhibits an equivalent impedance of 0.085 ohms and a corresponding equivalent inductance of 0.13 nH;

the equivalent capacitance between the metal patterns on the two sides and the metal wire combination is 0.02 pF.

Preferably, the high-frequency band applicable to the high-speed interconnection structure is a transmission rate scene of 100G-400G.

Preferably, the equivalent circuit of the gold wire is composed of an equivalent inductor, an equivalent resistor, and two equivalent capacitors respectively connected in parallel with the equivalent inductor and the equivalent resistor, wherein the equivalent inductor is calculated in the following manner:

wherein, l is the length of the gold wire, d is the diameter of the gold wire, mu₀Is magnetic permeability in vacuum, mu_rIs the relative permeability of gold wire.

Preferably, for a metal pattern, the combination of gold wires electrically connected with the metal pattern adopts a bonding wire structure with a first short wire and a second short wire arranged; alternatively, a bonding wire structure in which the first short wires and the long wires are arranged is employed.

Compared with the prior art, the embodiment of the invention has the beneficial effects that:

the invention adopts an interconnection scheme combining a pin and a gold wire bonding, not only overcomes the defect that the quality of a transmission signal of a soft belt is not easy to control, but also overcomes the risk of easy breakage in gold wire interconnection, compared with the structure of the traditional welding soft belt, the structure has the advantages of short signal line, low loss, small reflection and the like, and provides a good solution for interconnection at the speed of 100G and above.

[ description of the drawings ]

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

Fig. 1 is a schematic diagram of a soft strip coupling structure in an optical module in the prior art;

FIG. 2 is a schematic diagram of a soft strip coupling structure in another optical module in the prior art;

fig. 3 is a schematic diagram of a soft strip coupling structure in an optical module in the prior art;

FIG. 4 is a schematic diagram of a high-speed interconnect structure provided by an embodiment of the present invention;

FIG. 5 is a front view of a high speed interconnect structure provided by an embodiment of the present invention;

fig. 6 is a schematic diagram of a dc signal pin structure in a high-speed interconnect structure according to an embodiment of the present invention;

FIG. 7 is a schematic diagram of an equivalent circuit after a gold wire bonding wire is coupled according to an embodiment of the present invention;

FIG. 8 is an axial view of a stub-stub bond wire configuration provided by an embodiment of the present invention;

FIG. 9 is a schematic diagram of an equivalent circuit of a conventional gold wire bonding wire according to an embodiment of the present invention;

FIG. 10 is a schematic diagram of an equivalent circuit of a gold wire bond wire of a stub-long-stub according to an embodiment of the present invention;

FIG. 11 is a graph of the signal electric field characteristics of a short-long-short gold wire combination provided by an embodiment of the present invention;

fig. 12 is a diagram of an RL simulation result of designing and simulating a short-to-long-to-short bonding wire in three-dimensional electromagnetic simulation software according to an embodiment of the present invention;

fig. 13 is a diagram illustrating an IL simulation result of designing and simulating a short-to-long-to-short bonding wire in three-dimensional electromagnetic simulation software according to an embodiment of the present invention;

FIG. 14 is a schematic diagram of an equivalent circuit of a stub-to-stub gold wire bond;

FIG. 15 is a graph comparing the electric field characteristics of a short-long-short gold wire combination and a short-long gold wire combination signal provided by an embodiment of the present invention;

FIG. 16 is a schematic diagram of an equivalent circuit of a gold wire bonding wire of a stub-stub according to an embodiment of the present invention;

FIG. 17 is a graph of signal electric field characteristics for a short-to-short gold wire combination provided by an embodiment of the present invention;

fig. 18 is a diagram showing the RL simulation result of designing and simulating bonding wires of three gold wire combinations in the three-dimensional electromagnetic simulation software provided in the embodiment of the present invention;

fig. 19 is a diagram illustrating an IL simulation result of designing and simulating a bonding wire with three gold wire combinations in three-dimensional electromagnetic simulation software according to an embodiment of the present invention;

fig. 20 is a diagram of an equivalent impedance simulation result presented in signal transmission by a bonding wire with three gold wire combinations designed and simulated in three-dimensional electromagnetic simulation software provided in the embodiment of the present invention.

[ detailed description ] embodiments

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

In the description of the present invention, the terms "inner", "outer", "longitudinal", "lateral", "upper", "lower", "top", "bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are for convenience only to describe the present invention without requiring the present invention to be necessarily constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.

In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.

Example 1:

embodiment 1 of the present invention provides a high-speed interconnect structure, as shown in fig. 4, including:

the part for dc signal transmission is provided with a dc signal pin, which is composed of an upper layer pin and a lower layer pin (see fig. 5), or is composed of a separate upper layer pin, or is composed of a separate lower layer pin;

in a specific implementation manner, considering the situation that the stress in the environment is different in magnitude and whether a matched effective fixing structure exists in the corresponding ceramic part, the layout manner of the dc signal pins may adopt one of the three manners, and the manner formed by the upper layer pins and the lower layer pins belongs to the three manners with the highest stability, which is suitable for the situation that the stress environment is complicated.

In the invention, the direct-current signal pin structure is provided, and the fixing effect of the whole soft belt matching assembly is realized by considering that the soft belt can depend on the soft belt and the golden fingers arranged on the soft belt in the realization process of the soft belt in the prior art, and the direct-current signal pin structure can not be fixed by depending on a corresponding integral structure in the embodiment of the invention, but more direct-current signal pin structures are fixed by depending on structures except the golden wires; such as the dc signal pin described above. Of course, in an alternative implementation manner, a separate fixing connector may be used to perform the fixed coupling between the ceramic part of the package shown in fig. 4 or the separate ceramic part and the PCB (for example, a fixing base is directly disposed at a fixed position of the corresponding PCB and coupled into the corresponding base by screws to complete the fixing of the package on the corresponding PCB, and the corresponding ceramic part of the package or the separate ceramic part may also be fixed to the package in a similar manner, or even fixed in a manner that the upper and lower parts of the package are directly covered to form the upper and lower abutting surfaces, which is not described herein again), at this time, the above "consisting of separate upper-layer pins or separate lower-layer pins" may be used to control the assembly complexity and the total number of devices.

In this embodiment, it is understood that the later metal cluster and gold wire combination is defaulted to the upper level location area, i.e., the upper surface similar to fig. 5.

The part for high-frequency transmission is realized by combining a metal pattern matched with high-frequency impedance and a gold wire, the metal pattern and the gold wire are combined to form a compensation structure, and the compensation structure enables the high-frequency impedance of the high-speed interconnection structure to be continuously transited. The gold wire combination implementation form described in the embodiment of the present invention may be expressed as a combination manner of the first short wire, the long wire, and the second short wire, a combination manner of the first short wire and the long wire, and the like.

The embodiment of the invention adopts an interconnection scheme combining a pin and a gold wire bonding, thereby overcoming the defect that the quality of a transmission signal of a soft belt is not easy to control and the risk of easy breakage in gold wire interconnection.

The metallization pattern adopts a transmission structure of a coplanar waveguide or a microstrip line, the metallization pattern can present 50 ohm impedance characteristic (the default is that the equivalent impedance of an interface is described as 50 ohm), the metallization pattern needs gold wire interconnection, the gold wire brings parasitic series resistance, inductance and parallel parasitic capacitance, the parasitic parameters can introduce capacitive reactance and inductive reactance to the interconnection structure, and the calculation formula is as follows:

X_l＝2πf×L

wherein C is a capacitive reactance, L is an inductive reactance, and f is a frequency.

As shown in fig. 4, the high-speed interconnection structure is used for the airtight ceramic part of the case and/or the separate ceramic part, which are more different from each other in that the ceramic part of the case is fixedly coupled with the case after the assembly is completed, and more often, the ceramic part of the case is formed with the case in advance by gluing to form a structure which can be used for airtight condition, and the separate ceramic part is more specifically described in the above-mentioned general description except the case where the ceramic part of the case is implemented:

the direct-current signal pins and the metal patterns are arranged on the ceramic part of the tube shell; and/or;

the single ceramic part is provided with the direct-current signal pins and a metal pattern;

wherein the metal pattern is used for completing electrical communication with the corresponding gold wire combination when the ceramic part of the tube shell and/or the single ceramic part are assembled.

In terms of the prior art scene, the popularization rate of the ceramic structure of the tube shell is higher and higher, and the ceramic structure is characterized in that the ceramic part and the tube shell are fixed in advance in a glue mode, so that the stability of the structure is higher; however, considering that multiple device versions may exist in parallel in an actual scenario, and the case ceramic structure in the historical mold may not be fully adapted to the iteration of the function, a combined implementation of case ceramic and individual ceramic parts also exists. Any one of the above two structures or a combination thereof is applicable to the technical solution proposed by the present invention.

In the embodiment, if the ceramic part of the package and/or the separate ceramic part are directly electrically connected to the PCB, the above-mentioned embodiments are carried out. The direct current signal pin is directly welded and fixed with the golden finger of the PCB, the direct current signal pin not only plays a role in transmitting direct current signals, but also mechanically fixes the PCB and the ceramic part or the single ceramic part of the tube shell together. When bearing the effect of certain external force, the PCB is difficult to move, thereby ensuring that the gold wires of the high-frequency transmission part are not easy to break due to the external force.

As shown in fig. 6 (which can be understood as the bottom view effect from the bottom to the top in the structure diagram of fig. 5), there is also provided a preferred implementation scheme, wherein one side of the ceramic part and/or the separate ceramic part of the package is used for arranging the dc signal pins, and the dc signal joint array shown in fig. 6 is formed; and the other side is mainly used for bearing the high-frequency impedance matching metal pattern and gold wire combined structure. Thereby forming a more effective and stable fixation structure.

In addition, if the application scenario of the present invention includes the above-mentioned PCB, a metal pattern for compensating parasitic parameters of the gold wire is also provided on a portion of the corresponding PCB for electrical connection with the gold wire, and the high-speed interconnect structure specifically includes:

connecting a plurality of metal patterns in the ceramic part of the tube shell or the single ceramic part with metal wires and the metallization layers with corresponding functions on the PCB; wherein, the PCB metallization layer part is designed with a metal pattern with compensation gold wire parasitic parameters. The structure has excellent high-frequency performance, and can realize transmission at a rate of 100/400G or more.

In the embodiment of the present invention, as shown in fig. 7, the equivalent circuit of the gold wire is composed of an equivalent inductor, an equivalent resistor, and two equivalent capacitors respectively connected in parallel to the equivalent inductor and the equivalent resistor, wherein the calculation method of the equivalent inductor is as follows:

wherein, l is the length of the gold wire, d is the diameter of the gold wire, mu₀Is magnetic permeability (mu) in vacuum₀＝4π×10^-7H/m)，μ_rIs the relative permeability (mu) of gold wire_r＝1)。

After the application examples of the high-speed interconnection structure provided by the invention and the PCB board matched with the high-speed interconnection structure to complete the electrical connection are described, an innovative improvement scheme is also provided based on the high-speed interconnection structure provided by the invention. In a corresponding modified solution, as shown in fig. 8, for one metal pattern, a gold wire electrically connected to the metal pattern adopts a bonding wire structure in which a first short wire, a long wire and a second short wire are arranged. The first short line, the long line and the second short line have the same length of the gold wire; and the first short line and the second short line have the same line length. For example, a gold wire with a diameter of 0.025mm, which is the most common in the prior art, may be used, and besides, a gold wire with another diameter may also be used as the solution of the present invention, and the length of the gold wire may be designed by the above-mentioned formula of calculating the equivalent inductance.

Example 2:

the embodiment of the invention is an implementation scheme based on the embodiment 1 and matched with a specific application scene for explanation. The ceramic surface is provided with a metallization layer, and a direct-current signal pin is welded on the metallization part for direct-current signal transmission by using high-temperature solder; the device comprises an upper layer pin and a lower layer pin, or an independent upper layer pin, or an independent lower layer pin;

the part for high-frequency transmission is not welded with a pin, and is directly realized by combining a metal pattern matched with high-frequency impedance and a gold wire, and the metal pattern and the gold wire are combined to form a compensation structure, so that the high-frequency impedance of a high-speed interconnection structure is relatively continuous, and good high-frequency performance is obtained.

Compared with the structure of the traditional welding soft belt, the structure has the advantages of short signal line, low loss, small reflection and the like, and provides a good solution for interconnection at the speed of 100G or above.

In use, the pins for dc characteristic transmission are soldered directly to the metal fingers of the PCB board. This pin not only plays the effect of transmission direct current signal, still is in the same place PCB board with pipe shell ceramic portion or solitary ceramic portion is fixed for when bearing the effect of certain external force, PCB is difficult for removing, thereby guarantees that the gold wire of high frequency transmission part does not receive external force, difficult fracture.

Example 3:

in the embodiment of the present invention, a short, long, and short combined gold wire structure is designed for one metal pattern as set forth in the above embodiment 1, and compared with the difference in the characteristics of the prior art, the structure is demonstrated through specific test objects and experimental data.

The influence of parasitic inductance effect in a gold wire bonding model is obvious from an equivalent circuit of gold wire bonding, and in order to improve the transmission performance of an optical module and reduce the influence of parasitic inductance of a gold wire bonding wire, the invention provides a bonding wire arrangement mode of the gold wire bonding wire, and the bonding wire arrangement of a short wire-a long wire-a short wire (also referred to as short-long-short for short) is used, as shown in fig. 8, three gold wires can be bonded in a bonding pad with limited width, so that the performance of the optical module is effectively improved.

Fig. 9 shows a conventional gold wire bonding equivalent circuit, in which the length of a gold wire is 0.3mm, the diameter is 0.025mm, the resistance is 0.05ohm, the inductance is 0.24nH, and the capacitance C1 is 0.0138pF (capacitance C2).

An equivalent circuit of a gold wire combination structure of a first stub, a long wire and a second stub is shown in fig. 10, where a corresponding interface impedance is 50 ohms (including a first interface equivalent resistor located on the left side of fig. 10 and a second interface equivalent resistor located on the right side of fig. 10, and both resistances of the first interface equivalent resistor and the second interface equivalent resistor are 50 ohms, in a specific circuit structure, when the first interface equivalent resistor represents an impedance characteristic presented by a system input network to an optical module, and the corresponding second interface equivalent resistor represents an impedance characteristic presented by a system receiving network to the optical module), an impedance characteristic presented by the metal pattern is a resistance of 50 ohms when a frequency is 1GHz, and the gold wire combination (a diameter of which uses a most conventional parameter of 0.025mm) is specifically:

the first stub and the second stub each exhibit an equivalent impedance of: the first stub equivalent resistance is 0.04 ohm;

the first stub and the second stub each exhibit an equivalent inductance of: the first stub equivalent inductance is 0.115 nH;

the equivalent impedance exhibited by the long line is: the long line equivalent resistance is 0.085 ohms, and the corresponding equivalent inductance exhibited is: the equivalent inductance of the long wire is 0.13 nH;

the equivalent capacitance between the metal patterns on the two sides and the metal wire combination is 0.02pF, and by adopting the structure, the parasitic inductance, the capacitance (also expressed as the equivalent inductance and the equivalent capacitance in other embodiments of the invention) and the like are reduced. So that the high-frequency loss and reflection are obviously reduced, and higher interconnection characteristics are obtained. Correspondingly, when the electrical signal passes through the gold wire combination, the corresponding electric field characteristic analysis is as shown in fig. 11, wherein in an electric field distribution diagram in the corresponding data signal transmission process, the larger the numerical value corresponding to the color is, the larger the signal transmission intensity is, it can be known from the effect of fig. 11 that the corresponding signal intensity is more balanced in the short-long-short structure, in this case, the equivalent inductance of the first short wire, the equivalent inductance of the second short wire, and the equivalent inductance of the long wire are respectively higher in the equivalent inductance calculation occupied by the gold wire combination than the original respective equivalent inductance, that is, the most intuitive calculation method is to take the weighted values of all the three to 1, and then calculate the equivalent inductance of the gold wire combination by using the equivalent inductances of the three in a parallel relationship.

Designing and simulating a short-line-long-line-short-line bonding line in three-dimensional electromagnetic simulation software, and comparing the short-line-long-line-short-line bonding line with a conventional bonding line mode, as shown in fig. 12 and 13, wherein the abscissa in the figure is a signal rate and the unit is G; the ordinate unit is dB; and the corresponding figure 12 is a graph of the reflected signal, so in figure 12, the larger the corresponding absolute value of the ordinate, the better the performance; and the corresponding figure 13 is a graph of the transmitted signal, so in figure 13, the smaller the corresponding absolute value of the mid-coordinate, the better the performance. From the simulation result, the return loss of the short-line-long-line-short-line routing mode is improved by about 10dB, the insertion loss is improved by more than 0.2dB, and the transmission characteristic of the optical module is effectively improved.

In the specific implementation process, the corresponding interface impedance can also be other values, and at this time, the equivalent impedance of the relevant metal pattern and the equivalent impedance of the gold wire combination are correspondingly adjusted; therefore, other embodiments similar to the embodiments of the present invention may be adopted, and only the value of the equivalent impedance parameter is simply adjusted, and still fall within the scope of the present invention.

Example 4:

in example 1 of the present invention, a gold wire combination has been introduced, and in addition to the sandwich structure including the first stub, the long wire, and the second stub, which is preferred in example 3, a combination similar to the first stub and the second stub, or a combination of the first stub and the long wire may be employed. It should be noted here that, in the two alternative combinations, the parameter characteristics of the corresponding first stub and the second stub are consistent, and are only one expression for following the corresponding expression and for distinguishing the objects.

As shown in fig. 14, the parameter values of the gold wire combination first equivalent capacitance 'and second equivalent capacitance' presented in fig. 14 were changed to 0.028pF, except that the respective first stub equivalent resistance, second stub equivalent resistance, first stub equivalent inductance and second stub equivalent inductance were kept the same as those in fig. 10 in embodiment 3; the comparative analysis of the electric field characteristics of the corresponding short-long-short structure in the preferred embodiment of embodiment 1 of the present invention is shown in fig. 15, where the larger the value corresponding to the color in the electric field distribution diagram in the corresponding data signal transmission process is, the larger the signal transmission intensity is, and it can be known from the comparative effect of fig. 15 that the corresponding signal intensity is more balanced in the short-long-short structure, in this case, the equivalent inductance of the first short wire, the equivalent inductance of the second short wire, and the equivalent inductance of the long wire are respectively calculated in the gold wire combination, and the occupied weight of the equivalent inductance calculation is higher than the original respective equivalent inductance, that is, the most intuitive calculation method is to take the weighted values of all the three parts to 1, and then calculate the equivalent inductance of the gold wire combination in parallel relationship by using the equivalent inductances of the three parts. The phenomenon of the short-long structure is greatly overweight, so that large deviation is generated between the equivalent inductance of the gold wire combination calculated theoretically and the equivalent inductance of the gold wire combination in practical application, and the theoretical design cannot show due effect in practical application.

As shown in fig. 16, the parameter values of the gold wire combination first equivalent capacitance "and second equivalent capacitance" shown in fig. 14 were changed to 0.035pF, except that the respective first stub equivalent resistance, second stub equivalent resistance, first stub equivalent inductance and second stub equivalent inductance were kept the same as those in fig. 10 in embodiment 3; the corresponding electric field characteristic analysis is shown in fig. 17, wherein in an electric field distribution diagram in the corresponding data signal transmission process, the larger the numerical value corresponding to the color is, the larger the signal transmission intensity is, and it can be known from the effect of fig. 17 that the corresponding signal intensity is also more balanced in the short-short structure, in this case, the equivalent inductance of the first short line, the equivalent inductance of the second short line, and the equivalent inductance of the long line are respectively higher in the fitness between the calculated weight of the equivalent inductance in the gold wire combination and the original respective equivalent inductance, that is, the most intuitive calculation method is to take the weighted value of all three to 1, and then calculate the equivalent inductance of the gold wire combination by using the equivalent inductances of the three in a parallel relationship.

In the embodiment of the present invention, the short-long-short is still proposed as a preferred implementation solution because, compared to the short-short (equivalent to the long-long solution), the short-long-short can further lower the equivalent inductance, thereby achieving a better impedance matching effect, and, in the technical implementation of gold wire bonding, the applicant has demonstrated through practice that the width of the metal pattern required for the respective short-long-short gold wire composite structure and short-short gold wire composite structure can be the same, since the bonding point of the long wire can be just shifted as compared with the bonding points of the two short wires, and as the gold wire, it is in an insulated state except for the end points, therefore, the short-long-short gold wire combination structure is formed by a new lengthening wire mode on the basis of a similar short-short structure without influencing a long wire.

As shown in fig. 18 and fig. 19, the relationship between the speed and the attenuation of the short-short gold wire combination structure, the short-long gold wire combination structure and the short-long-short gold wire combination structure is shown in three alternative implementations proposed by the present invention. It can be seen from the figure that the short-long-short gold wire composite structure exhibits the optimum effect in both reflection and transmission characteristics compared to the other two structures.

Around the impedance matching characteristics given to example 1, as shown in fig. 20, the ordinate is impedance, and the abscissa is time, and in the compensation structure, the impedance presented by a single gold wire interconnection structure in a link is about 66 ohms, the impedance presented by a short-short interconnection structure is about 60 ohms, and the impedance presented by a short-long interconnection structure is about 53 ohms.

The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.