阅读说明：本技术 一种在连续辐射照射下具有稳定性能的晶体管逻辑电路 (Transistor logic circuit with stable performance under continuous radiation irradiation ) 是由 黄宏嘉 林和 牛崇实 洪学天 于 2021-07-07 设计创作，主要内容包括：本发明公开了一种在连续辐射照射下具有稳定性能的晶体管逻辑电路,包括：输入多发射极晶体管、相位分离晶体管、射极跟随器、输出负载晶体管、可吸收晶体管、电阻器组和附加二极管元件组；附加二极管元件组,分别连接输入多发射极晶体管、相位分离晶体管、射极跟随器、可吸收晶体管、电阻器组；附加二极管元件组包括多个附加二极管元件,用于控制输出端的逻辑电平值,并在连续辐射照射下保持响应速度；一种在连续辐射照射下具有稳定性能的晶体管元件逻辑运算方法,该新型电路的低电平输出电压具有足够低的值,使增益与开关速度能保持稳定。(The invention discloses a transistor logic circuit with stable performance under continuous radiation irradiation, which comprises: an input multi-emitter transistor, a phase separation transistor, an emitter follower, an output load transistor, an absorbable transistor, a resistor group and an additional diode element group; an additional diode element group which is respectively connected with the input multi-emitter transistor, the phase separation transistor, the emitter follower, the absorbable transistor and the resistor group; the additional diode element group comprises a plurality of additional diode elements for controlling the logic level value of the output end and maintaining the response speed under continuous radiation irradiation; a method for logically operating a transistor element with stable performance under continuous radiation irradiation, the low level output voltage of the novel circuit has a sufficiently low value to enable the gain and switching speed to be kept stable.)

1. A transistor logic circuit having stable performance under continuous radiation exposure, comprising:

an input multi-emitter transistor, a phase separation transistor, an emitter follower, an output load transistor, an absorbable transistor, a resistor group and an additional diode element group;

the input end multi-emitter transistor is respectively connected with the input bus, the phase separation transistor, the additional diode element group and the resistor group; the output load transistor is respectively connected with the absorbable transistor, the phase separation transistor, the emitter follower, the common bus and the output end;

an additional diode element group which is respectively connected with the input multi-emitter transistor, the phase separation transistor, the emitter follower, the absorbable transistor and the resistor group; the additional diode element group includes a plurality of additional diode elements.

2. A transistor logic circuit having stable performance under continuous radiation exposure in accordance with claim 1, wherein said additional set of diode elements comprises:

a first additional diode and a second additional diode; a first additional diode comprising: a first additional transistor, a first additional transistor connection circuit; a second additional diode comprising: a second additional transistor, a second additional transistor connection circuit;

a first additional transistor connection circuit connecting the base and the collector of the first additional transistor as a first equivalent anode of the first additional diode; the emitter of the first additional transistor is used as a first equivalent cathode of the first additional diode, and diode element equivalence is achieved on the emitter junction of the first additional transistor;

the first equivalent anode is respectively connected with the collector of the input multi-emitter transistor and the base of the phase separation transistor, and the first equivalent cathode is connected with the base of the absorbable transistor;

a second additional transistor connection circuit connecting the base and the collector of the second additional transistor as a second equivalent anode of the second additional diode; the emitter of the second additional transistor is used as a second equivalent cathode of the second additional diode, and diode element equivalence is realized on the emitter junction of the second additional transistor;

the second equivalent anode is respectively connected with the base of the input multi-emitter transistor and the resistor group, and the second equivalent cathode is respectively connected with the collector of the absorbable transistor, the base of the emitter follower and the resistor group.

3. A transistor logic circuit having stable performance under continuous radiation exposure in accordance with claim 1, wherein said additional set of diode elements further comprises:

the additional emitter of the phase separation transistor is equivalent to a first additional diode, and the additional emitter of the input-end multi-emitter transistor is equivalent to a second additional diode; an equivalent first additional diode is connected to the base of the absorbable transistor through an additional emitter of the phase separation transistor; the equivalent second additional diode is respectively connected with a collector of the phase separation transistor, a base of the emitter follower and the resistor group through an additional emitter of the input-end multi-emitter transistor;

the N-type region of the first additional diode is connected with the base electrode of the absorption transistor, and the P-type region of the first additional diode is connected with the base electrode of the phase separation transistor;

the N-type region of the second additional diode is connected to the collector of the phase-splitting transistor and the P-type region of the second additional diode is connected to the base of the input multi-emitter transistor.

4. A transistor logic circuit having stable performance under continuous radiation exposure according to claim 1, wherein the resistor bank comprises: a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, and a sixth resistor;

one end of the first resistor is connected with the base electrode of the input multi-emitter transistor, and the other end of the first resistor is connected with the power bus;

one end of the second resistor is connected with the additional diode element group, the phase separation transistor and the emitter follower respectively, and the other end of the second resistor is connected with the power bus;

one end of the third resistor is connected with the emitter follower, and the other end of the third resistor is connected with the power bus;

one end of the fourth resistor is connected with the emitter follower, and the other end of the fourth resistor is connected with the power bus;

one end of the fifth resistor is connected with the emitter follower, and the other end of the fifth resistor is grounded;

one end of the sixth resistor is connected with the phase separation transistor, the absorbing transistor and the output load transistor respectively, and the other end of the sixth resistor is connected with the common bus.

5. A transistor logic circuit having stable performance under continuous radiation exposure in accordance with claim 1, wherein said emitter follower comprises:

an emitter follower first transistor and an emitter follower second transistor; the base electrode of the first emitter follower transistor is respectively connected with the additional diode element group and the collector electrode of the phase separation transistor, the emitter electrode of the first emitter follower transistor is connected with the base electrode of the second emitter follower transistor and one end of a fifth resistor, and the other end of the fifth resistor is grounded; the collector of the emitter follower first transistor is connected with one end of a third resistor, and the other end of the third resistor is connected with a power bus;

the collector of the second transistor of the emitter follower is connected with one end of a fourth resistor, and the other end of the fourth resistor is connected with a power bus; the emitter of the second transistor of the emitter follower is respectively connected with the emitter of the transistor capable of absorbing, the collector of the output load transistor and the output end.

6. The transistor logic circuit of claim 5, wherein the output load transistor comprises:

the base of the output load transistor is connected to the emitter of the phase separation transistor and the collector of the transistor which can absorb, the emitter of the transistor which can absorb is connected to the collector of the output load transistor, the base of the transistor which can absorb is connected to the emitter equivalent diode cathode of the first additional diode element on the emitter of the first additional transistor structure, the base and the collector of the first additional diode element are connected together and the P region is connected to the base of the phase separation transistor, wherein the upper end of the first additional diode element is the collector of the phase separation transistor;

forming an interconnect structure in said opening in said circuit by connecting the collector of the additional transistor to the base; and connecting to a power supply bus via the second resistor after forming the interconnect structures between which the phase separation transistors are located.

7. The transistor logic circuit of claim 6, wherein the phase-splitting transistor comprises:

the collector of the phase separation transistor is connected to the power supply bus through a second resistor, and the emitter of the phase separation transistor is connected to the common bus through a sixth resistor; the collector of said phase separation transistor is connected to the N-region of a second additional diode element on the emitter of the second additional transistor structure, the base and collector of which are connected together and to the base of the input multi-emitter transistor.

8. A transistor logic circuit having stable performance under continuous radiation exposure according to claim 2, wherein said additional set of diode elements further comprises:

the additional diode element group can be used for replacing the resistor 6 with a circuit consisting of two resistors and a transistor for improving the transmission characteristic; the emitter of this transistor is connected to the common bus, while the base and collector are connected to the emitter of the phase separation transistor through a resistor.

9. A transistor logic circuit having stable performance under continuous radiation exposure according to claim 7, wherein the common bus comprises: a common high-frequency transmission line and a high-frequency transmission line connection point;

common high-frequency transmission line: the length is set, the length extends from the input end to each joint of the common bus, and the length is used for absorbing the residual radio frequency modulation signal in the circuit; wherein the input terminal is connected to the input port, the common bus is connected to the common bus, a phase-separating transistor, and a sinking transistor;

the output port is connected to a collector electrode of the output load transistor so as to output the radio frequency monitoring signal in a coupling mode according to the beam splitting rate of the residual radio frequency modulation signal; the common high-frequency transmission line comprises a coplanar waveguide or a microstrip line;

the common high-frequency transmission line material includes: a resistive material; the resistive material is selected from one of a thin film and a thick film; the resistive material includes: a carbon-filled polymer; a high frequency transmission line connection point for providing a DC and RF return path in said transistor having stable performance under continuous radiation exposure.

10. A method for logically operating a transistor element having stable performance under continuous radiation exposure, comprising:

a logic circuit low level output; the voltage value of the low level output can be expressed by the following formula:

vout ═ { Vebt (XW) + Veb (SC)) } - { Vebt (KXS)) + Vebd (EJ-1) } formula (1)

Wherein: vebt (XW), Veb (SC) and Vebt (KXS) are the voltage drops at the open junctions of the emitter-base of the bit-split transistor, the output load transistor, and the sinking transistor, respectively, and Vebd (EJ-1) is the voltage drop across the forward biased first additional diode element in the circuit of the sinking transistor;

voltage drop at the junction is output in low level; the value of the low-level output voltage Vout is determined by the difference in voltage drop between the two pairs of parallel-connected circuits of emitter-base junctions, and the voltage drop Δ V at the p-n junction through which the different currents I1 and I2 pass can be determined according to the following equation (2):

wherein：Is the temperature potential (at t ≈ 300K,) M is a defect coefficient of I-V characteristic, and the value range of m is 1 to 2; i1 and I2 represent the first current and the second current at the p-n junction, respectively, passing through; the value of the low level output voltage is determined by the difference in voltage drop between the two pairs of parallel connected circuits of the emitter-base p-n junction; a voltage drop difference between the pair of junctions caused by a difference in current flowing between the pair of junctions; and voltage drops of different currents passing through the junction pairs are obtained according to the temperature potential and the defect coefficient of the characteristics.

Technical Field

The present invention relates to the field of semiconductors, and more particularly to a transistor logic circuit having stable performance under continuous radiation exposure.

Background

Increasingly extensive research on aerospace and space technologies and high-energy physics requires semiconductor devices and circuits which can stably work under continuous radiation conditions, but at present, radiation-resistant high-quality high-reliability semiconductor devices are few, and the adopted methods such as device design and process design have the defects of complex process, high price and the like; the most similar scheme of the invention is to obtain the semiconductor device and the circuit which can stably work under the continuous radiation condition through the circuit design, but the characteristics of the known circuit design and the components are sensitive to the variation of the gain of the absorbable transistor and the deviation of the resistance calculation value in the basic circuit of the absorbable transistor, so that the semiconductor circuit and the system constructed by the semiconductor circuit can not stably work under the continuous radiation condition; the main disadvantages of the prior art are as follows: designing a device: the circuit is complex and sensitive to the variation of gain of the absorption transistor and the deviation of a resistance calculation value in a basic circuit of the absorption transistor, so that the semiconductor circuit and a system constructed by the semiconductor circuit cannot stably work under the continuous radiation condition; the process design comprises the following steps: the addition of process steps and the change of process flow can not obtain satisfactory results, and the price is high; therefore, there is a need to provide a transistor logic circuit with stable performance under continuous radiation exposure to at least partially solve the problems of the prior art.

Disclosure of Invention

In this summary, concepts in a simplified form are introduced that are further described in the detailed description. This summary of the invention is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.

To at least partially solve the above problems, the present invention provides a transistor logic circuit having stable performance under continuous irradiation of radiation, comprising:

an input multi-emitter transistor, a phase separation transistor, an emitter follower, an output load transistor, an absorbable transistor, a resistor group and an additional diode element group;

the input end multi-emitter transistor is respectively connected with the input bus, the phase separation transistor, the additional diode element group and the resistor group; the output load transistor is respectively connected with the absorbable transistor, the phase separation transistor, the emitter follower, the common bus and the output end;

an additional diode element group which is respectively connected with the input multi-emitter transistor, the phase separation transistor, the emitter follower, the absorbable transistor and the resistor group; the additional diode element group comprises a plurality of additional diode elements for controlling the logic level value of the output end and maintaining the response speed under continuous radiation irradiation.

Preferably, the additional diode element group includes:

a first additional diode and a second additional diode; a first additional diode comprising: a first additional transistor, a first additional transistor connection circuit; a second additional diode comprising: a second additional transistor, a second additional transistor connection circuit;

a first additional transistor connection circuit connecting the base and the collector of the first additional transistor as a first equivalent anode of the first additional diode; the emitter of the first additional transistor is used as a first equivalent cathode of the first additional diode, and diode element equivalence is achieved on the emitter junction of the first additional transistor;

the first equivalent anode is respectively connected with the collector of the input multi-emitter transistor and the base of the phase separation transistor, and the first equivalent cathode is connected with the base of the absorbable transistor;

a second additional transistor connection circuit connecting the base and the collector of the second additional transistor as a second equivalent anode of the second additional diode; the emitter of the second additional transistor is used as a second equivalent cathode of the second additional diode, and diode element equivalence is realized on the emitter junction of the second additional transistor;

the second equivalent anode is respectively connected with the base of the input multi-emitter transistor and the resistor group, and the second equivalent cathode is respectively connected with the collector of the absorbable transistor, the base of the emitter follower and the resistor group.

Preferably, the additional diode element group further includes:

an additional emitter of the phase separation transistor is equivalent to a first additional diode and an additional emitter of the input-side multi-emitter transistor is equivalent to a second additional diode; an equivalent first additional diode is connected to the base of the absorbable transistor through an additional emitter of the phase separation transistor; the equivalent second additional diode is respectively connected with a collector of the phase separation transistor, a base of the emitter follower and the resistor group through an additional emitter of the input-end multi-emitter transistor;

the N-type region of the first additional diode is connected with the base electrode of the absorption transistor, and the P-type region of the first additional diode is connected with the base electrode of the phase separation transistor;

the N-type region of the second additional diode is connected to the collector of the phase-splitting transistor and the P-type region of the second additional diode is connected to the base of the input multi-emitter transistor.

Preferably, the resistor group includes: a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, and a sixth resistor;

one end of the first resistor is connected with the base electrode of the input multi-emitter transistor, and the other end of the first resistor is connected with the power bus;

one end of the second resistor is connected with the additional diode element group, the phase separation transistor and the emitter follower respectively, and the other end of the second resistor is connected with the power bus;

one end of the third resistor is connected with the emitter follower, and the other end of the third resistor is connected with the power bus;

one end of the fourth resistor is connected with the emitter follower, and the other end of the fourth resistor is connected with the power bus;

one end of the fifth resistor is connected with the emitter follower, and the other end of the fifth resistor is grounded;

one end of the sixth resistor is connected with the phase separation transistor, the absorbing transistor and the output load transistor respectively, and the other end of the sixth resistor is connected with the common bus.

Preferably, the emitter follower includes:

an emitter follower first transistor and an emitter follower second transistor; the base electrode of the first emitter follower transistor is respectively connected with the additional diode element group and the collector electrode of the phase separation transistor, the emitter electrode of the first emitter follower transistor is connected with the base electrode of the second emitter follower transistor and one end of a fifth resistor, and the other end of the fifth resistor is grounded; the collector of the emitter follower first transistor is connected with one end of a third resistor, and the other end of the third resistor is connected with a power bus;

the collector of the second transistor of the emitter follower is connected with one end of a fourth resistor, and the other end of the fourth resistor is connected with a power bus; the emitter of the second transistor of the emitter follower is respectively connected with the emitter of the transistor capable of absorbing, the collector of the output load transistor and the output end.

Preferably, the output load transistor includes:

the base of the output load transistor is connected to the emitter of the phase separation transistor and the collector of the transistor which can absorb, the emitter of the transistor which can absorb is connected to the collector of the output load transistor, the base of the transistor which can absorb is connected to the emitter equivalent diode cathode of the first additional diode element on the emitter of the first additional transistor structure, the base and the collector of the first additional diode element are connected together and the P region is connected to the base of the phase separation transistor, wherein the upper end of the first additional diode element is the collector of the phase separation transistor;

forming an interconnect structure in said opening in said circuit by connecting the collector of the additional transistor to the base; and connecting to a power supply bus via the second resistor after forming the interconnect structures between which the phase separation transistors are located.

Preferably, the phase separation transistor includes:

the collector of the phase separation transistor is connected to the power supply bus through a second resistor, and the emitter of the phase separation transistor is connected to the common bus through a sixth resistor; the collector of said phase separation transistor is connected to the N-region of a second additional diode element on the emitter of the second additional transistor structure, the base and collector of which are connected together and to the base of the input multi-emitter transistor.

Preferably, the additional diode element group further includes:

the additional diode element group can be used for replacing the resistor 6 with a circuit consisting of two resistors and a transistor for improving the transmission characteristic; the emitter of this transistor is connected to the common bus, while the base and collector are connected to the emitter of the phase separation transistor through a resistor.

Preferably, the common bus comprises: a common high-frequency transmission line and a high-frequency transmission line connection point;

common high-frequency transmission line: the length is set, the length extends from the input end to each joint of the common bus, and the length is used for absorbing the residual radio frequency modulation signal in the circuit; wherein the input terminal is connected to the input port, the common bus is connected to the common bus, a phase-separating transistor, and a sinking transistor;

the output port is connected to a collector electrode of the output load transistor so as to output the radio frequency monitoring signal in a coupling mode according to the beam splitting rate of the residual radio frequency modulation signal; the common high-frequency transmission line comprises a coplanar waveguide or a microstrip line;

the common high-frequency transmission line material includes: a resistive material; the resistive material is selected from one of a thin film and a thick film; the resistive material includes: a carbon-filled polymer; a high frequency transmission line connection point for providing a DC and RF return path in said transistor having stable performance under continuous radiation exposure.

A method for logically operating a transistor element having stable performance under continuous radiation exposure, comprising:

element logic operation step 1, outputting logic circuit low level; the voltage value of the low level output can be expressed by the following formula:

vout ═ { Vebt (XW) + Veb (SC)) } - { Vebt (KXS)) + Vebd (EJ-1) } formula (1)

Wherein: vebt (XW), Veb (SC) and Vebt (KXS) are the voltage drops at the open junctions of the emitter-base of the bit-split transistor, the output load transistor, and the sinking transistor, respectively, and Vebd (EJ-1) is the voltage drop across the forward biased first additional diode element in the circuit of the sinking transistor;

element logic operation step 2, voltage drop at the junction is output in low level; the value of the low-level output voltage Vout is determined by the difference in voltage drop between the two pairs of parallel-connected circuits of emitter-base junctions, and the voltage drop Δ V at the p-n junction through which the different currents I1 and I2 pass can be determined according to the following equation (2):

wherein:is the temperature potential (at t ≈ 300K,m is a defect coefficient of I-V characteristic, and the value range of m is 1 to 2; i1 and I2 represent the first current and the second current at the p-n junction, respectively, passing through; the value of the low level output voltage is determined by the difference in voltage drop between the two pairs of parallel connected circuits of the emitter-base p-n junction; a voltage drop difference between the pair of junctions caused by a difference in current flowing between the pair of junctions; and voltage drops of different currents passing through the junction pairs are obtained according to the temperature potential and the defect coefficient of the characteristics.

Compared with the prior art, the invention at least comprises the following beneficial effects:

the parameter stability of the transistor-transistor logic element under continuous radiation irradiation can be improved; a transistor logic circuit with stable performance under continuous radiation irradiation can control the logic level value of an output end by inputting a multi-emitter transistor, a phase separation transistor, an emitter follower, an output load transistor, an absorbable transistor, a resistor group and an additional diode element group; the input end multi-emitter transistor is respectively connected with the input bus, the phase separation transistor, the additional diode element group and the resistor group; the output load transistor is respectively connected with the absorbable transistor, the phase separation transistor, the emitter follower, the common bus and the output end; an additional diode element group which is respectively connected with the input multi-emitter transistor, the phase separation transistor, the emitter follower, the absorbable transistor and the resistor group; the additional diode element group comprises a plurality of additional diode elements, and the logic level value of the control output end can maintain the response speed under continuous radiation irradiation.

Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.

Drawings

The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:

FIG. 1 is a circuit diagram of an embodiment of a transistor logic circuit with stable performance under continuous radiation exposure according to the present invention.

FIG. 2 is a circuit diagram of a second embodiment of a transistor logic circuit with stable performance under continuous radiation exposure in accordance with the present invention.

Detailed Description

The present invention is further described in detail below with reference to the drawings and examples so that those skilled in the art can practice the invention with reference to the description.

As shown in fig. 1-2, the present invention provides a transistor logic circuit having stable performance under continuous radiation exposure, comprising:

an input multi-emitter transistor, a phase separation transistor, an emitter follower, an output load transistor, an absorbable transistor, a resistor group and an additional diode element group;

the input end multi-emitter transistor is respectively connected with the input bus, the phase separation transistor, the additional diode element group and the resistor group;

the output load transistor is respectively connected with the absorbable transistor, the phase separation transistor, the emitter follower, the common bus and the output end;

an additional diode element group which is respectively connected with the input multi-emitter transistor, the phase separation transistor, the emitter follower, the absorbable transistor and the resistor group; the additional diode element group comprises a plurality of additional diode elements for controlling the logic level value of the output end and maintaining the response speed under continuous radiation irradiation.

The working principle of the technical scheme is as follows: a transistor logic circuit with stable performance under continuous radiation irradiation controls the logic level value of an output end through an input multi-emitter transistor, a phase separation transistor, an emitter follower, an output load transistor, an absorbable transistor, a resistor group and an additional diode element group; the input end multi-emitter transistor is respectively connected with the input bus, the phase separation transistor, the additional diode element group and the resistor group; the output load transistor is respectively connected with the absorbable transistor, the phase separation transistor, the emitter follower, the common bus and the output end; an additional diode element group which is respectively connected with the input multi-emitter transistor, the phase separation transistor, the emitter follower, the absorbable transistor and the resistor group; the additional diode element group comprises a plurality of additional diode elements for controlling the logic level value of the output end to maintain the response speed under continuous radiation irradiation.

The beneficial effects of the above technical scheme are that: the parameter stability of the transistor-transistor logic element under continuous radiation irradiation can be improved; a transistor logic circuit with stable performance under continuous radiation irradiation can control the logic level value of an output end by inputting a multi-emitter transistor, a phase separation transistor, an emitter follower, an output load transistor, an absorbable transistor, a resistor group and an additional diode element group; the input end multi-emitter transistor is respectively connected with the input bus, the phase separation transistor, the additional diode element group and the resistor group; the output load transistor is respectively connected with the absorbable transistor, the phase separation transistor, the emitter follower, the common bus and the output end; an additional diode element group which is respectively connected with the input multi-emitter transistor, the phase separation transistor, the emitter follower, the absorbable transistor and the resistor group; the additional diode element group comprises a plurality of additional diode elements, and the logic level value of the control output end can maintain the response speed under continuous radiation irradiation.

In one embodiment, the additional group of diode elements comprises:

a first additional diode and a second additional diode; a first additional diode comprising: a first additional transistor, a first additional transistor connection circuit; a second additional diode comprising: a second additional transistor, a second additional transistor connection circuit;

a first additional transistor connection circuit connecting the base and the collector of the first additional transistor as a first equivalent anode of the first additional diode; the emitter of the first additional transistor is used as a first equivalent cathode of the first additional diode, and diode element equivalence is achieved on the emitter junction of the first additional transistor;

the first equivalent anode is respectively connected with the collector of the input multi-emitter transistor and the base of the phase separation transistor, and the first equivalent cathode is connected with the base of the absorbable transistor;

a second additional transistor connection circuit connecting the base and the collector of the second additional transistor as a second equivalent anode of the second additional diode; the emitter of the second additional transistor is used as a second equivalent cathode of the second additional diode, and diode element equivalence is realized on the emitter junction of the second additional transistor;

the second equivalent anode is respectively connected with the base of the input multi-emitter transistor and the resistor group, and the second equivalent cathode is respectively connected with the collector of the absorbable transistor, the base of the emitter follower and the resistor group.

The working principle of the technical scheme is as follows: a first additional diode and a second additional diode; a first additional diode comprising: a first additional transistor, a first additional transistor connection circuit; a second additional diode comprising: a second additional transistor, a second additional transistor connection circuit; a first additional transistor connection circuit connecting the base and the collector of the first additional transistor as a first equivalent anode of the first additional diode; the emitter of the first additional transistor is used as a first equivalent cathode of the first additional diode, and diode element equivalence is achieved on the emitter junction of the first additional transistor; the first equivalent anode is respectively connected with the collector of the input multi-emitter transistor and the base of the phase separation transistor, and the first equivalent cathode is connected with the base of the absorbable transistor; a second additional transistor connection circuit connecting the base and the collector of the second additional transistor as a second equivalent anode of the second additional diode; the emitter of the second additional transistor is used as a second equivalent cathode of the second additional diode, and diode element equivalence is realized on the emitter junction of the second additional transistor; the second equivalent anode is respectively connected with the base of the input multi-emitter transistor and the resistor group, and the second equivalent cathode is respectively connected with the collector of the absorbable transistor, the base of the emitter follower and the resistor group;

if one or more of the inputs of the element receives a low voltage level Vinput ≈ 0.2V, the voltage is set ≈ 0.9V on a multiple-emitter transistor basis. The phase separation transistor is closed with the output load transistor and is therefore set at a voltage value close to the power supply voltage on the collector of the phase separation transistor. The first and second transistors of the output emitter follower are disconnected and the output load transistor is closed. When a high level is set at the input of the circuit, the transistor of the output emitter follower is turned on, the additional diode element connected between the collector of the phase separation transistor and the base of the transistor of the input multi-emitter is in reverse bias, the absorption transistor is closed, its emitter-base junction and the diode element are reverse biased. Therefore, the first and second additional diode elements and the sinking transistor in the high level mode at the output terminal do not affect the static characteristics of the elements;

when a high voltage level Vinput of 2.4V is applied to all input terminals of the element, a voltage of about 2.1V will be set at the base of the input multi-emitter transistor, the transistor is in reverse active mode and the channel is open, a voltage of about 1.4V will be set at the collector of the phase-splitting transistor, closing the first and second transistors of the output emitter follower, opening the output load transistor and supplying the current to the output terminal connection element. This will set a low level voltage at the output of the circuit. The emitter of the sinking transistor is connected to a point of low potential and the base is connected to a point of potential ≈ 1.4V through an additional diode element. Therefore, the sink transistor is turned on and bypasses the collector junction of the output load transistor, thereby limiting the high-speed operation of the element from a low potential to a high potential;

the second additional diode element between the base of the input multi-emitter transistor and the collector of the phase-splitting transistor is open-circuited, stabilizing the collector voltage at a level ≈ 1.4v and limiting the saturation of the phase-splitting transistor, resulting in an efficient high-speed switching circuit during switching.

The beneficial effects of the above technical scheme are that: increasing the stability of the parameters of the transistor-transistor logic element under continuous radiation exposure; a first additional diode and a second additional diode; a first additional diode comprising: a first additional transistor, a first additional transistor connection circuit; a second additional diode comprising: a second additional transistor, a second additional transistor connection circuit; a first additional transistor connection circuit connecting the base and the collector of the first additional transistor as a first equivalent anode of the first additional diode; the emitter of the first additional transistor is used as a first equivalent cathode of the first additional diode, and diode element equivalence is achieved on the emitter junction of the first additional transistor; the first equivalent anode is respectively connected with the collector of the input multi-emitter transistor and the base of the phase separation transistor, and the first equivalent cathode is connected with the base of the absorbable transistor; a second additional transistor connection circuit connecting the base and the collector of the second additional transistor as a second equivalent anode of the second additional diode; the emitter of the second additional transistor is used as a second equivalent cathode of the second additional diode, and diode element equivalence is realized on the emitter junction of the second additional transistor; the second equivalent anode is respectively connected with the base of the input multi-emitter transistor and the resistor group, and the second equivalent cathode is respectively connected with the collector of the absorbable transistor, the base of the emitter follower and the resistor group;

if one or more of the inputs of the element receives a low voltage level Vinput ≈ 0.2V, the voltage is set ≈ 0.9V on a multiple-emitter transistor basis. The phase separation transistor is closed with the output load transistor and is therefore set at a voltage value close to the power supply voltage on the collector of the phase separation transistor. The first and second transistors of the output emitter follower are disconnected and the output load transistor is closed. When a high level is set at the input of the circuit, the transistor of the output emitter follower is turned on, the additional diode element connected between the collector of the phase separation transistor and the base of the transistor of the input multi-emitter is in reverse bias, the absorption transistor is closed, its emitter-base junction and the diode element are reverse biased. Therefore, the first and second additional diode elements and the sinking transistor in the high level mode at the output terminal do not affect the static characteristics of the elements;

when a high voltage level Vinput of 2.4V is applied to all input terminals of the element, a voltage of about 2.1V will be set at the base of the input multi-emitter transistor, the transistor is in reverse active mode and the channel is open, a voltage of about 1.4V will be set at the collector of the phase-splitting transistor, closing the first and second transistors of the output emitter follower, opening the output load transistor and supplying the current to the output terminal connection element. This will set a low level voltage at the output of the circuit. The emitter of the sinking transistor is connected to a point of low potential and the base is connected to a point of potential ≈ 1.4V through an additional diode element. Therefore, the sink transistor is turned on and bypasses the collector junction of the output load transistor, thereby limiting the high-speed operation of the element from a low potential to a high potential;

the second additional diode element between the base of the input multi-emitter transistor and the collector of the phase-splitting transistor is open-circuited, stabilizing the collector voltage at a level ≈ 1.4v and limiting the saturation of the phase-splitting transistor, providing an efficient high-speed switching circuit during switching.

In one embodiment, the additional group of diode elements further comprises:

an additional emitter of the phase separation transistor is equivalent to a first additional diode and an additional emitter of the input-side multi-emitter transistor is equivalent to a second additional diode; an equivalent first additional diode is connected to the base of the absorbable transistor through an additional emitter of the phase separation transistor; the equivalent second additional diode is respectively connected with a collector of the phase separation transistor, a base of the emitter follower and the resistor group through an additional emitter of the input-end multi-emitter transistor;

the N-type region of the first additional diode is connected with the base electrode of the absorption transistor, and the P-type region of the first additional diode is connected with the base electrode of the phase separation transistor;

the N-type region of the second additional diode is connected to the collector of the phase-splitting transistor and the P-type region of the second additional diode is connected to the base of the input multi-emitter transistor.

The working principle of the technical scheme is as follows: an additional emitter of the phase separation transistor is equivalent to a first additional diode and an additional emitter of the input-side multi-emitter transistor is equivalent to a second additional diode; an equivalent first additional diode is connected to the base of the absorbable transistor through an additional emitter of the phase separation transistor; the equivalent second additional diode is respectively connected with a collector of the phase separation transistor, a base of the emitter follower and the resistor group through an additional emitter of the input-end multi-emitter transistor; when the amplification factors of all transistors of the element are simultaneously changed within an allowable range, the voltage drop difference DeltaV is kept constant, so that the stability of output voltage and speed under the external influence can be ensured; for example, due to temperature fluctuations or exposure to penetrating radiation, the magnification of the transistor constituting the element may vary; it follows from the above that the low level output voltage of the proposed component has a sufficiently low value to provide a large noise immunity and to enable the gain of the transistor to remain stable when the transistor circuit is subjected to external influences; in the proposed element, the voltage at the collector Vcrt of the phase separation transistor is less than the voltage at the base of the input multi-emitter transistor, which is less than the amount of voltage drop across the diode element forward biased, and is about 1.4V; the N-type region of the first additional diode is connected with the base electrode of the absorption transistor, and the P-type region of the first additional diode is connected with the base electrode of the phase separation transistor; the N-type region of the second additional diode is connected to the collector of the phase-splitting transistor and the P-type region of the second additional diode is connected to the base of the input multi-emitter transistor.

The beneficial effects of the above technical scheme are that: comparison of the voltage values of most characteristic points of the known and proposed elements shows that the characteristics of the known elements are sensitive to variations in the gain of the absorbing transistor and to deviations in the calculated value of the resistance in the basic circuit of the absorbing transistor, since the magnitude of the voltage drop across the emitter junction is practically not spread during the same process cycle and is small with changes in the current, which are due to variations in the gain of the transistor under various external influences; an additional emitter of the phase separation transistor is equivalent to a first additional diode and an additional emitter of the input-side multi-emitter transistor is equivalent to a second additional diode; an equivalent first additional diode is connected to the base of the absorbable transistor through an additional emitter of the phase separation transistor; the equivalent second additional diode is respectively connected with a collector of the phase separation transistor, a base of the emitter follower and the resistor group through an additional emitter of the input-end multi-emitter transistor; when the amplification factors of all transistors of the element are simultaneously changed within an allowable range, the voltage drop difference DeltaV is kept constant, so that the stability of output voltage and speed under the external influence can be ensured; for example, due to temperature fluctuations or exposure to penetrating radiation, the magnification of the transistor constituting the element may vary; it follows from the above that the low level output voltage of the proposed component has a sufficiently low value to provide a large noise immunity and to enable the gain of the transistor to remain stable when the transistor circuit is subjected to external influences; in the proposed element, the voltage at the collector Vcrt of the phase separation transistor is less than the voltage at the base of the input multi-emitter transistor, which is less than the amount of voltage drop across the diode element forward biased, and is about 1.4V; the N-type region of the first additional diode is connected with the base electrode of the absorption transistor, and the P-type region of the first additional diode is connected with the base electrode of the phase separation transistor; the N-type region of the second additional diode is connected to the collector of the phase separation transistor, and the P-type region of the second additional diode is connected to the base of the input multi-emitter transistor; the element provided by the invention improves the existing defects and improves the performance of the circuit element.

In one embodiment, the resistor bank includes: a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, and a sixth resistor;

one end of the first resistor is connected with the base electrode of the input multi-emitter transistor, and the other end of the first resistor is connected with the power bus;

one end of the second resistor is connected with the additional diode element group, the phase separation transistor and the emitter follower respectively, and the other end of the second resistor is connected with the power bus;

one end of the third resistor is connected with the emitter follower, and the other end of the third resistor is connected with the power bus;

one end of the fourth resistor is connected with the emitter follower, and the other end of the fourth resistor is connected with the power bus;

one end of the fifth resistor is connected with the emitter follower, and the other end of the fifth resistor is grounded;

one end of the sixth resistor is connected with the phase separation transistor, the absorbing transistor and the output load transistor respectively, and the other end of the sixth resistor is connected with the common bus.

The working principle of the technical scheme is as follows: by a plurality of resistors, comprising: a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, and a sixth resistor; one end of the first resistor is connected with the base electrode of the input multi-emitter transistor, and the other end of the first resistor is connected with the power bus; one end of the second resistor is connected with the additional diode element group, the phase separation transistor and the emitter follower respectively, and the other end of the second resistor is connected with the power bus; one end of the third resistor is connected with the emitter follower, and the other end of the third resistor is connected with the power bus; one end of the fourth resistor is connected with the emitter follower, and the other end of the fourth resistor is connected with the power bus; one end of the fifth resistor is connected with the emitter follower, and the other end of the fifth resistor is grounded; one end of the sixth resistor is connected with the phase separation transistor, the absorbing transistor and the output load transistor respectively, and the other end of the sixth resistor is connected with the common bus.

The beneficial effects of the above technical scheme are that: through a plurality of resistors, voltage balance of the circuit can be realized; the method comprises the following steps: a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, and a sixth resistor; one end of the first resistor is connected with the base electrode of the input multi-emitter transistor, and the other end of the first resistor is connected with the power bus; one end of the second resistor is connected with the additional diode element group, the phase separation transistor and the emitter follower respectively, and the other end of the second resistor is connected with the power bus; one end of the third resistor is connected with the emitter follower, and the other end of the third resistor is connected with the power bus; one end of the fourth resistor is connected with the emitter follower, and the other end of the fourth resistor is connected with the power bus; one end of the fifth resistor is connected with the emitter follower, and the other end of the fifth resistor is grounded; one end of the sixth resistor is connected with the phase separation transistor, the absorbable transistor and the output load transistor respectively, and the other end of the sixth resistor is connected with the common bus; the voltage of the circuit is more balanced and the current is more stable.

In one embodiment, the emitter follower includes:

an emitter follower first transistor and an emitter follower second transistor; the base electrode of the first emitter follower transistor is respectively connected with the additional diode element group and the collector electrode of the phase separation transistor, the emitter electrode of the first emitter follower transistor is connected with the base electrode of the second emitter follower transistor and one end of a fifth resistor, and the other end of the fifth resistor is grounded; the collector of the emitter follower first transistor is connected with one end of a third resistor, and the other end of the third resistor is connected with a power bus;

the collector of the second transistor of the emitter follower is connected with one end of a fourth resistor, and the other end of the fourth resistor is connected with a power bus; the emitter of the second transistor of the emitter follower is respectively connected with the emitter of the transistor capable of absorbing, the collector of the output load transistor and the output end.

The working principle of the technical scheme is as follows: a first transistor of an emitter follower and a second transistor of the emitter follower; the base electrode of the first emitter follower transistor is respectively connected with the additional diode element group and the collector electrode of the phase separation transistor, the emitter electrode of the first emitter follower transistor is connected with the base electrode of the second emitter follower transistor and one end of a fifth resistor, and the other end of the fifth resistor is grounded; the collector of the emitter follower first transistor is connected with one end of a third resistor, and the other end of the third resistor is connected with a power bus; the collector of the second transistor of the emitter follower is connected with one end of a fourth resistor, and the other end of the fourth resistor is connected with a power bus; the emitter of the second transistor of the emitter follower is respectively connected with the emitter of the transistor capable of absorbing, the collector of the output load transistor and the output end; high input impedance, low output impedance, low current drawn from the signal source and high load carrying capacity.

The beneficial effects of the above technical scheme are that: the base electrode of the first emitter follower transistor is respectively connected with the additional diode element group and the collector electrode of the phase separation transistor, the emitter electrode of the first emitter follower transistor is connected with the base electrode of the second emitter follower transistor and one end of a fifth resistor, and the other end of the fifth resistor is grounded; the collector of the emitter follower first transistor is connected with one end of a third resistor, and the other end of the third resistor is connected with a power bus; the collector of the second transistor of the emitter follower is connected with one end of a fourth resistor, and the other end of the fourth resistor is connected with a power bus; the emitter of the second transistor of the emitter follower is respectively connected with the emitter of the transistor capable of absorbing, the collector of the output load transistor and the output end; the input impedance is high, the output impedance is low, the current required from the signal source is small, the load capacity is strong, and the influence caused by direct connection between circuits can be reduced and buffering is performed.

In one embodiment, the output load transistor includes:

the base of the output load transistor is connected to the emitter of the phase separation transistor and the collector of the transistor which can absorb, the emitter of the transistor which can absorb is connected to the collector of the output load transistor, the base of the transistor which can absorb is connected to the emitter equivalent diode cathode of the first additional diode element on the emitter of the first additional transistor structure, the base and the collector of the first additional diode element are connected together and the P region is connected to the base of the phase separation transistor, wherein the upper end of the first additional diode element is the collector of the phase separation transistor;

forming an interconnect structure in said opening in said circuit by connecting the collector of the additional transistor to the base; and connecting to a power supply bus via the second resistor after forming the interconnect structures between which the phase separation transistors are located.

The working principle of the technical scheme is as follows: connecting the base of the output load transistor to the emitter of the phase separation transistor and the collector of the absorption transistor, the emitter of the absorption transistor being connected to the collector of the output load transistor, the base of the absorption transistor being connected to the emitter-equivalent diode cathode of the first additional diode element on the emitter of the first additional transistor structure, the base and collector of the first additional diode element being connected together and the P-region being connected to the base of the phase separation transistor, wherein the upper end of the first additional diode element is the collector of the phase separation transistor; forming an interconnect structure in said opening in said circuit by connecting the collector of the additional transistor to the base; and after the interconnection structures are formed, the interconnection structures are connected to a power supply bus through the second resistor, the phase separation transistor is arranged between the interconnection structures, and the result that the transistor processes input signals is obtained.

The beneficial effects of the above technical scheme are that: connecting the base of the output load transistor to the emitter of the phase separation transistor and the collector of the absorption transistor, the emitter of the absorption transistor being connected to the collector of the output load transistor, the base of the absorption transistor being connected to the emitter-equivalent diode cathode of the first additional diode element on the emitter of the first additional transistor structure, the base and collector of the first additional diode element being connected together and the P-region being connected to the base of the phase separation transistor, wherein the upper end of the first additional diode element is the collector of the phase separation transistor; forming an interconnect structure in said opening in said circuit by connecting the collector of the additional transistor to the base; and after the interconnection structures are formed, the phase separation transistor is connected to a power supply bus through the second resistor, the phase separation transistor is arranged between the interconnection structures, and the result that the transistor processes input signals can be obtained.

In one embodiment, the phase separation transistor includes:

the collector of the phase separation transistor is connected to the power supply bus through a second resistor, and the emitter of the phase separation transistor is connected to the common bus through a sixth resistor; the collector of said phase separation transistor is connected to the N-region of a second additional diode element on the emitter of the second additional transistor structure, the base and collector of which are connected together and to the base of the input multi-emitter transistor.

The working principle of the technical scheme is as follows: the collector of the transistor is connected to the power bus through the second resistor, and the emitter is connected to the common bus through the sixth resistor; the collector of said phase separation transistor is connected to the N-region of a second additional diode element on the emitter of the second additional transistor structure, the base and collector of which are connected together and to the base of the input multi-emitter transistor.

The beneficial effects of the above technical scheme are that: the collector of the transistor is connected to the power bus line through a second resistor, and the emitter is connected to the common bus line through a sixth resistor; the collector of said phase separation transistor is connected to the N-region of a second additional diode element on the emitter of the second additional transistor structure, the base and collector of which are connected together and to the base of the input multi-emitter transistor.

In one embodiment, the additional group of diode elements further comprises:

the additional diode element group can be used for replacing the resistor 6 with a circuit consisting of two resistors and a transistor for improving the transmission characteristic; the emitter of this transistor is connected to the common bus, while the base and collector are connected to the emitter of the phase separation transistor through a resistor.

The working principle of the technical scheme is as follows: the additional diode element group can adopt a circuit consisting of two resistors and one transistor to replace the resistor 6 for improving the transmission characteristic; the emitter of this transistor is connected to the common bus, while the base and collector are connected to the emitter of the phase separation transistor through a resistor.

The beneficial effects of the above technical scheme are that: the transmission characteristic can be improved, and the additional diode element group can adopt a circuit consisting of two resistors and one transistor to replace the resistor 6 for improving the transmission characteristic; the emitter of the transistor is connected to a common bus line, and the base and the collector are connected to the emitter of the phase separating transistor through a resistor, so that the transmission characteristic is further improved.

In one embodiment, the common bus comprises: a common high-frequency transmission line and a high-frequency transmission line connection point;

common high-frequency transmission line: the length is set, the length extends from the input end to each joint of the common bus, and the length is used for absorbing the residual radio frequency modulation signal in the circuit; wherein the input terminal is connected to the input port, the common bus is connected to the common bus, a phase-separating transistor, and a sinking transistor;

the output port is connected to a collector electrode of the output load transistor so as to output the radio frequency monitoring signal in a coupling mode according to the beam splitting rate of the residual radio frequency modulation signal; the common high-frequency transmission line comprises a coplanar waveguide or a microstrip line;

the common high-frequency transmission line material includes: a resistive material; the resistive material is selected from one of a thin film and a thick film; the resistive material includes: a carbon-filled polymer; a high frequency transmission line connection point for providing a DC and RF return path in said transistor having stable performance under continuous radiation exposure.

The working principle of the technical scheme is as follows: the common high-frequency transmission line has a set length, the length extends from the input end to each joint connected with the common bus, and the common high-frequency transmission line is used for absorbing the residual radio frequency modulation signal in the circuit; wherein the input terminal is connected to the input port, the common bus is connected to the common bus, a phase-separating transistor, and a sinking transistor; the output port is connected to a collector electrode of the output load transistor so as to output the radio frequency monitoring signal in a coupling mode according to the beam splitting rate of the residual radio frequency modulation signal; the common high-frequency transmission line comprises a coplanar waveguide or a microstrip line; the common high-frequency transmission line material includes: a resistive material; the resistive material is selected from one of a thin film and a thick film; the resistive material includes: a carbon-filled polymer; a high frequency transmission line connection point for providing a DC and RF return path in said transistor having stable performance under continuous radiation exposure.

The beneficial effects of the above technical scheme are that: according to the public high-frequency transmission line, the length is set, the length extends from the input end to each joint connected with the public bus, and the public high-frequency transmission line is used for absorbing the residual radio frequency modulation signal in the circuit; wherein the input terminal is connected to the input port, the common bus is connected to the common bus, a phase-separating transistor, and a sinking transistor; the output port is connected to a collector electrode of the output load transistor so as to output the radio frequency monitoring signal in a coupling mode according to the beam splitting rate of the residual radio frequency modulation signal; the common high-frequency transmission line comprises a coplanar waveguide or a microstrip line; the common high-frequency transmission line material includes: a resistive material; the resistive material is selected from one of a thin film and a thick film; the resistive material includes: a carbon-filled polymer; a high frequency transmission line connection point for providing a DC and RF loop in the transistor with stable performance under continuous radiation exposure.

A method of logically operating a transistor element having stable performance under continuous radiation exposure, comprising:

element logic operation step 1, outputting logic circuit low level; the voltage value of the low level output can be expressed by the following formula:

vout ═ { Vebt (XW) + Veb (SC)) } - { Vebt (KXS)) + Vebd (EJ-1) } formula (1)

Wherein: vebt (XW), Veb (SC) and Vebt (KXS) are the voltage drops at the open junctions of the emitter-base of the bit-split transistor, the output load transistor, and the sinking transistor, respectively, and Vebd (EJ-1) is the voltage drop across the forward biased first additional diode element in the circuit of the sinking transistor;

element logic operation step 2, voltage drop at the junction is output in low level; the value of the low-level output voltage Vout is determined by the difference in voltage drop between the two pairs of parallel-connected circuits of emitter-base junctions, and the voltage drop Δ V at the p-n junction through which the different currents I1 and I2 pass can be determined according to the following equation (2):

wherein:is the temperature potential (at t ≈ 300K,m is a defect coefficient of I-V characteristic, and the value range of m is 1 to 2; i1 and I2 represent the first current and the second current at the p-n junction, respectively, passing through; the value of the low level output voltage is determined by the difference in voltage drop between the two pairs of parallel connected circuits of the emitter-base p-n junction; a voltage drop difference between the pair of junctions caused by a difference in current flowing between the pair of junctions; and voltage drops of different currents passing through the junction pairs are obtained according to the temperature potential and the defect coefficient of the characteristics.

The working principle of the technical scheme is as follows: element logic operation step 1, outputting logic circuit low level; the voltage value of the low level output can be expressed by the following formula:

vout ═ { Vebt (XW) + Veb (SC)) } - { Vebt (KXS)) + Vebd (EJ-1) } formula (1)

Wherein: vebt (XW), Veb (SC) and Vebt (KXS) are the voltage drops at the open junctions of the emitter-base of the bit-split transistor, the output load transistor, and the sinking transistor, respectively, and Vebd (EJ-1) is the voltage drop across the forward biased first additional diode element in the circuit of the sinking transistor;

element logic operation step 2, voltage drop at the junction is output in low level; the value of the low-level output voltage Vout is determined by the difference in voltage drop between the two pairs of parallel-connected circuits of emitter-base junctions, and the voltage drop Δ V at the p-n junction through which the different currents I1 and I2 pass can be determined according to the following equation (2):

wherein:is the temperature potential (at t ≈ 300K,m is a defect coefficient of I-V characteristic, and the value range of m is 1 to 2; i1 and I2 represent the first current and the second current at the p-n junction, respectively, passing through; the value of the low level output voltage is determined by the difference in voltage drop between the two pairs of parallel connected circuits of the emitter-base p-n junction; a voltage drop difference between the pair of junctions caused by a difference in current flowing between the pair of junctions; obtaining voltage drops of different currents passing through the junction pairs according to the temperature potential and the defect coefficient of the characteristics; temperature potentialMay be expressed as kT/q, which may be found from the values of K (K ═ 1.38 × 10J/K) and q (q ═ 1.6 × 10C) at tt ≈ 300K, 0.026V; the temperature potential generally has a positive temperatureThe temperature coefficient, and the junction voltage of the transistor has a negative temperature coefficient, and the balance of the temperature coefficient and the temperature coefficient can generate a reference voltage with zero temperature coefficient at a certain temperature;

the difference Δ V between the voltage drops is kept constant while the amplification factors of all the transistors of the element are varied within an allowable range, which ensures stability of the output voltage and speed under external influences, for example, the amplification factors of the transistors constituting the element may vary due to temperature fluctuations or exposure to penetrating radiation; it follows from the above that the low level output voltage of the proposed component has a sufficiently low value to provide a large noise immunity and to enable the gain of the transistor to remain stable when the transistor circuit is subjected to external influences; in the proposed element, the voltage at the collector Vcrt of the phase separation transistor is less than the voltage at the base of the input multi-emitter transistor, which is less than the amount of voltage drop across the diode element forward biased, and is about 1.4V; comparing the voltage values of most characteristic points of the known and proposed elements of the present invention shows that the characteristics of the known elements are sensitive to variations in gain of the absorbing transistor and deviations in calculated values of resistance in the basic circuit of the absorbing transistor, because the magnitude of the voltage drop across the emitter junction is not actually expanded in the same process cycle and changes little with current, which is caused by variations in gain of the transistor under various external influences, whereas the magnitude of the voltage drop across the emitter junction is not actually expanded in the same process cycle and changes little with current, overcoming these drawbacks; the low level output voltage of the novel circuit has a value low enough to provide greater noise immunity and to allow the gain and switching speed of the transistor to remain stable when the transistor circuit is subjected to external influences.

The beneficial effects of the above technical scheme are that: when the amplification factors of all the transistors are simultaneously changed within the allowable range, the difference Δ V between the voltage drops can be kept constant, which can ensure stability of the output voltage and speed under external influence, for example, the amplification factor of the transistor constituting the element may be changed due to temperature fluctuation or exposure to penetrating radiation; it follows from the above that the low level output voltage of the proposed component has a sufficiently low value to provide a large noise immunity and to enable the gain of the transistor to remain stable when the transistor circuit is subjected to external influences; in the proposed element, the voltage at the collector Vcrt of the phase separation transistor is less than the voltage at the base of the input multi-emitter transistor, which is less than the amount of voltage drop across the diode element forward biased, and is about 1.4V; comparing the voltage values of most characteristic points of the known and proposed elements of the present invention shows that the characteristics of the known elements are sensitive to variations in gain of the absorbing transistor and deviations in calculated values of resistance in the basic circuit of the absorbing transistor, because the magnitude of the voltage drop across the emitter junction is not actually expanded in the same process cycle and changes little with current, which is caused by variations in gain of the transistor under various external influences, whereas the magnitude of the voltage drop across the emitter junction is not actually expanded in the same process cycle and changes little with current, overcoming these drawbacks; the low level output voltage of the novel circuit has a value low enough to provide greater noise immunity and to allow the gain and switching speed of the transistor to remain stable when the transistor circuit is subjected to external influences.

While embodiments of the invention have been disclosed above, it is not limited to the applications set forth in the description and examples, which are fully applicable to various fields of endeavor for which the invention may be embodied, and further modifications may readily be effected therein by those skilled in the art without departing from the general concept as defined by the appended claims and their equivalents, and the invention is therefore not limited to the details shown and described herein.