阅读说明：本技术 一种基于谐振器能量局部化效应的双轴硅微加速度计 (Double-shaft silicon micro-accelerometer based on resonator energy localization effect ) 是由 杨波 郭鑫 郑翔 姜永昌 陈新茹 于 2020-05-14 设计创作，主要内容包括：本发明公开了一种基于谐振器能量局部化效应的双轴硅微加速度计,包括上层的信号敏感结构以及下层的信号引出结构。上层信号敏感结构通过硅微加工技术加工而成,下层通过玻璃湿法刻蚀及金属层溅射技术加工而成,上层的信号敏感结构通过阳极键合技术键合在下层的信号引出结构之上。本发明的双轴惯性加速度测量采用两组结构参数一致的弱耦合谐振器的振动幅度比例之差作为整体输出信号,避免输出响应曲线严重非线性区的出现,同时有效的抑制外界共模干扰,进一步提升加速度计的环境稳定性。(The invention discloses a double-shaft silicon micro-accelerometer based on resonator energy localization effect, which comprises an upper signal sensitive structure and a lower signal leading-out structure. The upper signal sensitive structure is processed by a silicon micromachining technology, the lower signal sensitive structure is processed by a glass wet etching technology and a metal layer sputtering technology, and the upper signal sensitive structure is bonded on the lower signal leading-out structure by an anodic bonding technology. According to the double-shaft inertial acceleration measurement method, the difference between the vibration amplitude ratios of two groups of weakly coupled resonators with consistent structural parameters is used as an integral output signal, the occurrence of a serious nonlinear region of an output response curve is avoided, external common mode interference is effectively inhibited, and the environmental stability of the accelerometer is further improved.)

1. A dual-axis silicon micro-accelerometer based on resonator energy localization effects, comprising: the accelerometer adopts a double-layer structure, and comprises an upper-layer signal sensitive structure and a lower-layer signal leading-out structure (5), wherein the upper-layer signal sensitive structure is processed by a silicon micromachining technology, the lower-layer signal leading-out structure (5) is processed by a glass wet etching and metal layer sputtering technology, a metal leading-out electrode and a signal wire are arranged on the surface of the lower-layer signal leading-out structure, and the upper-layer signal sensitive structure is bonded on the lower-layer signal leading-out structure (5) by an anodic bonding technology;

the upper-layer signal sensitive structure consists of an inertial mass block (1), first, second, third and fourth weak coupling resonators (2-1, 2-2, 2-3 and 2-4) and first, second, third and fourth force amplification structures (3-1, 3-2, 3-3 and 3-4);

the first weak coupling resonator (2-1) is positioned on the left side of the inertial mass block (1) and connected with a first output straight beam (3-1-1) on the first force amplification structure (3-1);

the second weak coupling resonator (2-2) is positioned at the lower side of the inertial mass block (1) and is connected with a second output straight beam (3-2-1) of the second force amplification structure (3-2);

the third weak coupling resonator (2-3) is positioned on the right side of the inertial mass block (1) and is connected with a third output straight beam (3-3-1) of the third force amplification structure (3-3);

the fourth weak coupling resonator (2-4) is positioned on the upper side of the inertial mass block (1) and is connected with a fourth output straight beam (3-4-1) of the fourth force amplification structure (3-4);

the first, second, third and fourth input straight beams (3-1-2, 3-2-2, 3-3-2 and 3-4-2) of the first, second, third and fourth force amplifying structures (3-1, 3-2, 3-3 and 3-4) are connected with the inertial mass block (1); when the accelerometer is subjected to an inertial force, the inertial force generated by the inertial mass (1) is amplified by the first, second, third and fourth force amplifying structures (3-1, 3-2, 3-3, 3-4) and further acts on the vibration beams of the first, second, third and fourth single-ended fixed vibration parts (2-1-3, 2-2-3, 2-3-3 and 2-4-3) on the first, second, third and fourth force amplifying structures (3-1, 3-2, 3-3 and 3-4), so that the axial rigidity of the vibration beams is different, the motion characteristics of the first, second, third and fourth weakly coupled resonators (2-1, 2-2, 2-3 and 2-4) are changed, and the first, second, third and fourth single-ended fixed vibration parts (2-1-3, 2-3, 2-2-3, 2-3-3, 2-4-3) and a first, second, third and fourth force amplifying structures (3-1, 3-2, 3-3, 3-4), the vibration amplitude ratio of the vibration beam of the first, second, third and fourth double-end fixed vibration parts (2-1-4, 2-2-4, 2-3-4, 2-4-4) is changed.

2. The dual-axis silicon microaccelerometer based on resonator energy localization effect of claim 1, characterized in that: the structures of the first, second, third and fourth weak coupling resonators (2-1, 2-2, 2-3 and 2-4) are completely the same; wherein the first weak coupling resonator (2-1) is composed of a group of first single-end fixed vibration parts (2-1-3), a group of first double-end fixed vibration parts (2-1-4), first and second weak coupling beams (2-1-1 and 2-1-2), first, second, third and fourth excitation signal applying mechanisms (2-1-5, 2-1-6, 2-1-7 and 2-1-8), first and second, three, four, five, six and seven eight sensitive signal detection mechanisms (2-1-9, 2-1-10, 2-1-11, 2-1-12, 2-1-13, 2-1-14, 2-1-15 and 2-1-16);

the first single-end fixed vibration part (2-1-3) and the first double-end fixed vibration part (2-1-4) are respectively connected through a first weak coupling beam (2-1-1 and a second weak coupling beam (2-1-2);

the first, second, third and fourth excitation signal applying structures (2-1-5, 2-1-6, 2-1-7 and 2-1-8) are arranged on the outer sides of the first single-ended fixed vibration part (2-1-3) and the first double-ended fixed vibration part (2-1-4) to form an excitation capacitor bank; the first, second, third, fourth, fifth, sixth and seventeenth sensitive signal detection mechanisms (2-1-9, 2-1-10, 2-1-11, 2-1-12, 2-1-13, 2-1-14, 2-1-15 and 2-1-16) are arranged on the inner sides of the first single-end fixed vibration part (2-1-3) and the first double-end fixed vibration part (2-1-4) to form a sensitive capacitor group.

3. The dual-axis silicon microaccelerometer based on resonator energy localization effect of claim 1, characterized in that: the first, second, third and fourth force amplifying structures (3-1, 3-2, 3-3 and 3-4) are completely the same in structure; the first intrinsic force amplification structure (3-1) is composed of a first output straight beam (3-1-1), a first input straight beam (3-1-2), a first support straight beam (3-1-3), a first lever (3-1-4) and a first lever anchor point (3-1-5); wherein the first lever anchor point (3-1-5) is connected with the first lever (3-1-4) through the first supporting straight beam (3-1-3).

4. The dual-axis silicon microaccelerometer based on resonator energy localization effect of claim 1, characterized in that: the metal electrodes comprise first, second, third, fourth, fifth, sixth, seventh, eighth, ninth, tenth, eleventh, twelfth, thirteenth, fourteenth, fifteenth and sixteenth excitation capacitance electrodes (4-9-3, 4-9-4, 4-10-3, 4-10-4, 4-11-3, 4-11-4, 4-12-3, 4-12-4, 4-13-3, 4-13-4, 4-14-3, 4-14-4, 4-15-3, 4-15-4, 4-16-3 and 4-16-4);

first, second, third, fourth, fifth, sixth, seventh, eighth excitation capacitance lead-out electrodes (4-1-3, 4-1-4, 4-2-3, 4-2-4, 4-3-3, 4-3-4, 4-4-3, 4-4-4-4);

the first, the second, the third, the fourth, the fifth, the sixth, the seventh, the eighth, the ninth, the tenth, the eleventh, the twelfth, the thirteenth, the fourteenth, the fifteenth, the sixteenth, the seventeenth, the eighteenth, the nineteenth, the twentieth, the twenty-first, the twenty-second, the twenty-third, the twenty-fourth, the twenty-fifth, the twenty-sixth, the twenty-seventh, the twenty-eighteenth, the twenty-ninth, the thirty-third and the thirty-second detection capacitor electrodes (4-9-1, 4-9-2, 4-9-5, 4-9-6, 4-10-1, 4-10-2, 4-10-5, 4-10-6, 4-11-1, 4-11-2, 4-11-5, 4-11-6, 4-12-1, 4-12-2, 4-12-5, 4-12-6, 4-13-1, 4-13-2, 4-13-5, 4-13-6, 4-14-1, 4-14-2, 4-14-5, 4-14-6, 4-15-1, 4-15-2, 4-15-5, 4-15-6, 4-16-1, 4-16-2, 4-16-5, 4-16-6);

first, second, third, fourth, fifth, sixth, seventh and eighth detection capacitance leading-out electrodes (4-1-1, 4-1-2, 4-2-1, 4-2-2, 4-3-1, 4-3-2, 4-4-1 and 4-4-2), first, second, third and fourth carrier electrodes (4-18-1, 4-18-2, 4-18-3 and 4-18-4); the first, second, third and fourth carrier extraction electrodes (4-17-1, 4-17-2, 4-17-3 and 4-17-4).

Technical Field

The invention relates to the field of micro-electromechanical systems and micro-inertia measurement, in particular to a double-shaft silicon micro-accelerometer based on resonator energy localization effect.

Background

Microelectromechanical systems refer to high-technology devices with dimensions of a few millimeters or less, the internal structures of which are typically on the order of micrometers or nanometers. The MEMS is designed into various application science and engineering technologies, and has wide application prospect in the fields of intelligent systems, consumer electronics, intelligent home, wearable equipment, microfluidic technologies and the like.

The silicon micro-accelerometer is a typical inertial sensor realized by using a micro-electro-mechanical system processing technology, is a core component for inertial navigation, guidance, orientation, motion carrier measurement and control, and has the characteristics of small volume, light weight, low cost, low energy consumption, high reliability, easy digitization, capability of meeting severe environment application and the like compared with the traditional accelerometer.

Since the end of the last century, much work has been done at home and abroad on silicon microaccelerometers. Researchers at Berkeley university of California developed a resonant silicon micro-accelerometer based on a resonance sensitivity principle, and can realize measurement of external input acceleration. However, at present, with the great reduction of the structure size, the sensitivity and the resolution of a common silicon micro-accelerometer are greatly reduced, and the influence of parasitic effect, mechanical structure noise, circuit noise and the like is great, so that the limit of detection capability is basically reached, the precision of the silicon micro-accelerometer is only maintained at a low-middle precision level, the application requirements of the low-middle precision can be basically met, and the difficulty in further greatly improving the measurement precision is great.

Disclosure of Invention

In order to solve the problems, the invention provides a double-shaft silicon micro-accelerometer based on resonator energy localization effect, which has the advantages of high relative sensitivity, small cross-axis interference, high environmental stability and the like.

In order to achieve the purpose, the invention adopts the technical scheme that:

the double-shaft silicon micro-accelerometer based on the resonator energy localization effect integrally adopts a double-layer structure, and comprises an upper-layer signal sensitive structure and a lower-layer signal leading-out structure. The upper signal sensitive structure is processed by a silicon micromachining technology, the lower signal sensitive structure is processed by a glass wet etching and metal layer sputtering technology, a metal leading-out electrode and a signal wire are arranged on the surface of the upper signal sensitive structure, and the upper signal sensitive structure is bonded on the lower signal leading-out structure by an anodic bonding technology.

The upper-layer signal sensitive structure consists of an inertial mass block, a first weak coupling resonator, a second weak coupling resonator, a third weak coupling resonator, a fourth weak coupling resonator, a first force amplifying structure, a second force amplifying structure, a third force amplifying structure and a fourth force amplifying structure;

the first weak coupling resonator is positioned on the left side of the inertial mass block and connected with a first output straight beam on the first force amplification structure;

the second weak coupling resonator is positioned at the lower side of the inertial mass block and is connected with a second output straight beam of the second force amplification structure;

the third weak coupling resonator is positioned on the right side of the inertial mass block and is connected with a third output straight beam of the third force amplification structure;

and the fourth weak coupling resonator is positioned on the upper side of the inertial mass block and is connected with a fourth output straight beam of the fourth force amplification structure.

The first, second, third and fourth input straight beams of the first, second, third and fourth force amplifying structures are connected with the inertia mass block;

the invention further improves that: the first, second, third and fourth weakly coupled resonators have the same structure; the first weak coupling resonator consists of a group of first single-end fixed vibration parts, a group of first double-end fixed vibration parts, a first weak coupling beam, a second weak coupling beam, a first excitation signal applying mechanism, a second excitation signal applying mechanism, a third excitation signal applying mechanism, a fourth excitation signal applying mechanism, a fifth excitation signal applying mechanism, a sixth excitation signal applying mechanism and a seventh excitation signal detecting mechanism; the first single-end fixed vibration part and the first double-end fixed vibration part are respectively connected through a first weak coupling beam and a second weak coupling beam;

the first, second, third and fourth excitation signal applying structures are arranged on the outer sides of the first single-end fixed vibration part and the first double-end fixed vibration part to form an excitation capacitor bank; the first, second, third, fourth, fifth, sixth and seventeenth sensing signal detection mechanisms are arranged on the inner sides of the first single-end fixed vibration part and the first double-end fixed vibration part to form a sensing capacitor bank.

The invention further improves that: the first force amplifying structure, the second force amplifying structure, the third force amplifying structure and the fourth force amplifying structure are completely the same in structure; the first intrinsic force amplifying structure consists of a first output straight beam, a first input straight beam, a first support straight beam, a first lever and a first lever anchor point; wherein the first lever anchor point is connected with the first lever through a first supporting straight beam.

The invention further improves that: the metal electrodes comprise first, second, third, fourth, fifth, sixth, seventh, eighth, ninth, tenth, eleventh, twelfth, thirteenth, fourteenth, fifteenth and sixteenth excitation capacitance electrodes;

first, second, third, fourth, fifth, sixth, seventh, eighth excitation capacitance extraction electrodes; a first, second, third, fourth, fifth, sixth, seventh, eighth, ninth, tenth, eleventh, twelfth, thirteenth, fourteenth, fifteenth, sixteenth, seventeenth, eighteenth, nineteenth, twentieth, twenty-first, twenty-second, twenty-third, twenty-fourth, twenty-fifth, twenty-sixth, twenty-seventh, twenty-eighteenth, twenty-ninth, thirty-second detection capacitor electrode; the first, second, third, fourth, fifth, sixth, seventh and eighth detection capacitor extraction electrodes and the first, second, third and fourth carrier electrodes; the first, second, third and fourth carrier extraction electrodes.

When the double-shaft silicon micro-accelerometer based on the resonator energy localization effect is acted by an inertia force, the inertia force generated by the inertia mass block is amplified by the first, second, third and fourth force amplification structures and further acts on the vibration beams of the first, second, third and fourth single-end fixed vibration parts on the first, second, third and fourth force amplification structures, so that the axial rigidity of the vibration beams is different, the motion characteristics of the first, second, third and fourth weakly coupled resonators are changed, and the vibration amplitude proportion of the vibration beams of the first, second, third and fourth single-end fixed vibration parts and the first, second, third and fourth double-end fixed vibration parts on the first, second, third and fourth force amplification structures is changed. Therefore, the magnitude of the external input acceleration can be reversely deduced by measuring the variation degree of the vibration amplitude proportion of the vibration beam of the first, second, third and fourth double-end fixed vibration component.

Further, when the excitation signal applying structure of the weak coupling resonator applies the same-frequency opposite-phase cross-flow excitation voltage, the vibration beam can vibrate under the action of the electric field excitation force, so that the output alternating current signal can be detected on the sensitive signal detection mechanism. After closed-loop operation is carried out on the output signal, the frequency of the alternating current excitation signal can be locked to be the effective modal frequency of the weak coupling resonator, and therefore the weak coupling resonator is ensured to work in an effective mode.

Further, the biaxial silicon micro-accelerometer based on resonator energy localization effect selects the anti-phase motion mode of the weakly coupled resonator as the effective mode. When the weak coupling resonator works in an effective mode, the vibration beams of the single-end fixed vibration component and the double-end fixed vibration component have the same motion frequency and opposite directions. The vibration amplitude proportion of two coaxial groups of weakly coupled resonators with consistent structural parameters is subjected to difference calculation, so that the occurrence of a serious nonlinear area of an output response curve can be avoided, and external common mode interference can be effectively inhibited.

The invention has the beneficial effects that: compared with the prior art, the invention has the following advantages:

1. the inertial acceleration in two directions in a plane can be sensed by adopting a double-shaft sensing structure;

2. the force amplification structure is adopted to amplify the external introduced inertia force, so that the absolute mechanical sensitivity of the accelerometer is improved;

3. the vibration amplitude proportional signal of the weakly coupled resonator is used as a detection signal, so that the relative mechanical sensitivity of the accelerometer is improved, and the temperature stability of the accelerometer is improved;

4. the difference between the vibration amplitude ratios of the two groups of weakly coupled resonators with the same structural parameters is used as an overall output signal, and compared with the vibration amplitude ratio signal output of the original single weakly coupled resonator, the occurrence of a serious nonlinear area of an output response curve can be effectively avoided, meanwhile, external common mode interference is effectively inhibited, and the environmental stability of the accelerometer is further improved.

Drawings

FIG. 1 is a schematic view of the overall mechanical structure of the present invention;

FIG. 2 is a schematic diagram of a signal sensing architecture of the present invention;

FIG. 3(a) is a schematic diagram of the structure of the weakly coupled resonator of the present invention;

FIG. 3(b) is a schematic diagram of the structure of the weakly coupled resonator of the present invention;

FIG. 3(c) is a schematic diagram of the structure of the weakly coupled resonator of the present invention;

FIG. 3(d) is a schematic diagram of the weakly coupled resonator structure of the present invention;

FIG. 4(a) is a schematic diagram of a force amplifying lever structure according to the present invention;

FIG. 4(b) is a schematic diagram of a force amplifying lever structure according to the present invention;

FIG. 4(c) is a schematic view of a force amplifying lever structure of the present invention;

FIG. 4(d) is a schematic view of a force amplifying lever according to the present invention;

fig. 5 is a schematic diagram of a signal lead of the signal lead-out structure according to the present invention.

Detailed Description

The present invention is further described with reference to the accompanying drawings and specific examples, which are intended to be illustrative only and not to be limiting of the scope of the invention, and various equivalent modifications of the invention will occur to those skilled in the art upon reading the present invention and fall within the scope of the appended claims.

As shown in fig. 1, the biaxial silicon micro-accelerometer based on resonator energy localization effect provided by the invention adopts a double-layer structure, including an upper signal sensitive structure and a lower signal extraction structure 5. The upper signal sensitive structure is processed by a silicon micromachining technology, the lower signal leading-out structure 5 is processed by a glass wet etching technology and a metal layer sputtering technology, and the upper signal sensitive structure is bonded on the lower signal leading-out structure 5 by an anodic bonding technology.

As shown in fig. 2, the upper-layer signal sensitive structure is composed of an inertial mass block 1, first, second, third and fourth weakly coupled resonators 2-1, 2-2, 2-3 and 2-4, and first, second, third and fourth force amplification structures 3-1, 3-2, 3-3 and 3-4; the first weak coupling resonator 2-1 is positioned on the left side of the inertial mass block 1 and is connected with a first output straight beam 3-1-1 on the first force amplification structure 3-1; the second weak coupling resonator 2-2 is positioned at the lower side of the inertial mass block 1 and is connected with a second output straight beam 3-2-1 of the second force amplification structure 3-2; the third weak coupling resonator 2-3 is positioned on the right side of the inertial mass block 1 and is connected with a third output straight beam 3-3-1 of the third force amplification structure 3-3; the fourth weak coupling resonator 2-4 is positioned on the upper side of the inertial mass block 1 and is connected with a fourth output straight beam 3-4-1 of the fourth force amplification structure 3-4.

Wherein, the first, second, third and fourth input straight beams 3-1-2, 3-2-2, 3-3-2 and 3-4-2 of the first, second, third and fourth force amplifying structures 3-1, 3-2, 3-3-2 and 3-4-2 are connected with the inertia mass block 1;

as shown in fig. 3(a), 3(b), 3(c), and 3 (d): the structures of the first, second, third and fourth weak coupling resonators 2-1, 2-2, 2-3 and 2-4 are completely the same.

As shown in fig. 3(a), specifically, taking the first weakly coupled resonator 2-1 as an example:

the first weak coupling resonator 2-1 consists of a group of first single-ended fixed vibration parts 2-1-3, a group of first double-ended fixed vibration parts 2-1-4, first and second weak coupling beams 2-1-1 and 2-1-2, first, second, third and fourth excitation signal applying mechanisms 2-1-5, 2-1-6, 2-1-7 and 2-1-8, and first, second, third, fourth, fifth, sixth and seventh eight sensitive signal detecting mechanisms 2-1-9, 2-1-10, 2-1-11, 2-1-12, 2-1-13, 2-1-14, 2-1-15 and 2-1-16;

the first single-end fixed vibration part 2-1-3 and the first double-end fixed vibration part 2-1-4 are respectively connected through a first weak coupling beam 2-1-1 and a second weak coupling beam 2-1-2;

the first, second, third and fourth excitation signal applying structures 2-1-5, 2-1-6, 2-1-7 and 2-1-8 are arranged on the outer sides of the first single-end fixed vibration part 2-1-3 and the first double-end fixed vibration part 2-1-4 to form an excitation capacitor bank; the first, second, third, fourth, fifth, sixth and seventeenth sensitive signal detection mechanisms 2-1-9, 2-1-10, 2-1-11, 2-1-12, 2-1-13, 2-1-14, 2-1-15 and 2-1-16 are arranged on the inner sides of the first single-end fixed vibration part 2-1-3 and the first double-end fixed vibration part 2-1-4 to form a sensitive capacitance group.

The first, second, third and fourth force amplifying structures 3-1, 3-2, 3-3 and 3-4 are completely the same as shown in fig. 4(a), 4(b), 4(c) and 4 (d).

As shown in fig. 4(a), specifically taking the first force amplifying structure 3-1 as an example, the first force amplifying structure 3-1 is composed of a first output straight beam 3-1-1, a first input straight beam 3-1-2, a first support straight beam 3-1-3, a first lever 3-1-4, and a first lever anchor point 3-1-5. The first lever anchor point 3-1-5 is connected with the first lever 3-1-4 through the first supporting straight beam 3-1-3.

The arrangement of the metal electrodes and the metal leads of the signal lead-out structure in the present invention is shown in fig. 5.

The metal electrodes comprise first, second, third, fourth, fifth, sixth, seventh, eighth, ninth, tenth, eleventh, twelfth, thirteenth, fourteenth, fifteenth, sixteenth excitation capacitance electrodes 4-9-3, 4-9-4, 4-10-3, 4-10-4, 4-11-3, 4-11-4, 4-12-3, 4-12-4, 4-13-3, 4-13-4, 4-14-3, 4-14-4, 4-15-3, 4-15-4, 4-16-3, 4-16-4;

the first, second, third, fourth, fifth, sixth, seventh and eighth excitation capacitance extraction electrodes are 4-1-3, 4-1-4, 4-2-3, 4-2-4, 4-3-3, 4-3-4, 4-4-3 and 4-4-4;

the first, the second, the third, the fourth, the fifth, the sixth, the seventh, the eighth, the ninth, the tenth, the eleventh, the twelfth, the thirteenth, the fourteenth, the fifteenth, the sixteenth, the seventeenth, the eighteenth, the nineteenth, the twentieth, the twenty-first, the twenty-second, the thirteenth, the twenty-fourth, the twenty-fifth, the twenty-sixth, the twenty-seventh, the twenty-eighteenth, the twenty-ninth, the thirty-second and the thirty-second detection capacitor electrodes 4-9-1, 4-9-2, 4-9-5, 4-9-6, 4-10-1, 4-10-2, 4-10-5, 4-10-6, 4-11-1, 4-11-2, 4-11-5, 4-11-6, 4-12-1, 4-12-2, 4-12-5, 4-12-6, 4-13-1, 4-13-2, 4-13-5, 4-13-6, 4-14-1, 4-14-2, 4-14-5, 4-14-6, 4-15-1, 4-15-2, 4-15-5, 4-15-6, 4-16-1, 4-16-2, 4-16-5, 4-16-6;

the first, second, third, fourth, fifth, sixth, seventh and eighth detection capacitance extraction electrodes are 4-1-1, 4-1-2, 4-2-1, 4-2-2, 4-3-1, 4-3-2, 4-4-1 and 4-4-2, and the first, second, third and fourth carrier electrodes are 4-18-1, 4-18-2, 4-18-3 and 4-18-4; the first, second, third and fourth carrier extraction electrodes are 4-17-1, 4-17-2, 4-17-3 and 4-17-4.

The inertial force of the double-shaft silicon micro-accelerometer based on the resonator energy localization effect is expressed as follows:

F＝ma 1)

wherein m is the mass of the inertial mass. The inertia force generated by the inertia mass is amplified by the force amplification structure and further acts on the vibration beam of the single-end fixed vibration component, so that the axial rigidity of the vibration beam of the single-end fixed vibration component is different, and the change of the axial rigidity is specifically expressed as follows:

wherein k is_gIs the geometric rigidity coefficient of the vibration beam, lambda is the inertia force attenuation coefficient, and A is the magnification factor of the force amplification structure. When the axial rigidity of the vibration beam of the single-end fixed vibration component is changed, the motion characteristic of the weak coupling resonator is changed, and the vibration amplitude proportion of the vibration beam of the single-end fixed vibration component and the vibration beam of the double-end fixed vibration component is changed. Therefore, the difference expression of the vibration amplitude ratios of the weakly coupled resonators of the coaxial resonator structure is:

as can be seen from equation (3), the larger the external inertial force applied to the accelerometer, the larger the change in the difference between the vibration amplitude ratios. Therefore, the magnitude of the external input acceleration can be reversely deduced by measuring the change degree of the vibration amplitude proportion.

While the invention has been described in connection with specific embodiments thereof, it will be understood that these should not be construed as limiting the scope of the invention, which is defined in the following claims, and any variations which fall within the scope of the claims are intended to be embraced thereby.