阅读说明：本技术 一种显示面板及其制备方法、显示装置 (Display panel, preparation method thereof and display device ) 是由 金鹏 于 2020-06-23 设计创作，主要内容包括：本申请公开了一种显示面板及其制备方法、显示装置,显示面板包括第一PI层；第一阻隔层,设于所述第一PI层上；缓冲层,设于所述第一阻隔层远离所述第一PI层的一侧；多晶硅层,设于所述缓冲层远离所述第一阻隔层的一侧；激光遮挡层,设于所述第一PI层和所述第一阻隔层之间；或/和所述激光遮挡层设于所述第一阻隔层和所述缓冲层之间；或/和所述激光遮挡层设于所述缓冲层和所述多晶硅层之间。(The application discloses a display panel, a preparation method thereof and a display device, wherein the display panel comprises a first PI layer; the first barrier layer is arranged on the first PI layer; the buffer layer is arranged on one side, far away from the first PI layer, of the first blocking layer; the polycrystalline silicon layer is arranged on one side, far away from the first blocking layer, of the buffer layer; the laser shielding layer is arranged between the first PI layer and the first blocking layer; the laser shielding layer is arranged between the first blocking layer and the buffer layer; or/and the laser shielding layer is arranged between the buffer layer and the polycrystalline silicon layer.)

1. A display panel, comprising:

a first PI layer;

the first barrier layer is arranged on the first PI layer;

the buffer layer is arranged on one side, far away from the first PI layer, of the first blocking layer;

the polycrystalline silicon layer is arranged on one side, far away from the first blocking layer, of the buffer layer;

the laser shielding layer is arranged between the first PI layer and the first blocking layer; the laser shielding layer is arranged between the first blocking layer and the buffer layer; or/and the laser shielding layer is arranged between the buffer layer and the polycrystalline silicon layer.

2. The display panel according to claim 1, wherein the laser shielding layer is made of Al₂O₃。

3. The display panel according to claim 1, wherein the laser blocking layer has a thickness in a range of 1nm to 50 nm.

4. The display panel of claim 1, wherein the display panel further comprises

The second barrier layer is arranged on one side, far away from the first barrier layer, of the first PI layer;

the second PI layer is arranged on one side, far away from the first PI layer, of the second barrier layer;

and the glass substrate is arranged on one side, far away from the second barrier layer, of the second PI layer.

5. A method for manufacturing the display panel according to claim 1, comprising the steps of:

preparing a first PI layer;

preparing a laser shielding layer on the first PI layer;

preparing a first barrier layer on the laser shielding layer; or/and preparing a laser shielding layer on the first barrier layer;

preparing a buffer layer on the first barrier layer; or/and preparing a laser shielding layer on the buffer layer;

and preparing an amorphous silicon layer on the buffer layer.

6. The method of claim 5, wherein the step of preparing the amorphous silicon layer further comprises

And performing excimer laser annealing on the amorphous silicon layer to form a polycrystalline silicon layer.

7. The method according to claim 5, wherein the laser shielding layer is formed by chemical deposition or ink-jet printing.

8. The method of claim 5, wherein the first barrier layer and the buffer layer are formed by chemical deposition.

9. The method according to claim 5, wherein Al is used as a material of the laser shielding layer₂O_3，The thickness range of the laser shielding layer is 1nm-50 nm.

10. A display device comprising the display panel according to any one of claims 1 to 4.

Technical Field

The application relates to the technical field of display panels, in particular to a display panel, a preparation method of the display panel and a display device.

Background

The conventional organic light-Emitting Diode (OLED) structure has the advantages of self-luminescence, wide viewing angle, high contrast, low power consumption, and very high response rate, and has become one of the mainstream display technologies.

The OLED display panel adopts a very thin organic material coating and a substrate, and the current is switched on, so that the organic material emits light for display. At present, the OLED adopts Polyimide (PI) as a flexible substrate, the polyimide is first coated on a glass substrate, an amorphous silicon layer is then prepared after a barrier layer and a buffer layer are prepared on the PI substrate by a chemical vapor deposition method, and an Excimer Laser Annealing (ELA) is performed on the amorphous silicon layer to form a polycrystalline silicon layer.

Referring to fig. 1, fig. 1 is a schematic structural diagram of a display panel provided in the prior art, in which a display panel 100 includes a glass substrate 110, a first PI layer 120, a first barrier layer 130, a second PI layer 140, a second barrier layer 150, a buffer layer 160, and an amorphous silicon layer 170. Since the barrier layer and the buffer layer are usually made of silicon oxide or silicon nitride materials, and the transmittances of the materials are very high, when excimer laser annealing is performed on the amorphous silicon layer, laser can easily penetrate through the PI layer below the barrier layer and the buffer layer to burn, and even the PI layer can be peeled off.

Therefore, there is a need to develop a new display panel and a method for manufacturing the same to overcome the drawbacks of the prior art.

Disclosure of Invention

An object of the present invention is to provide a display panel, which can solve the problem that laser easily penetrates through a barrier layer and a buffer layer to burn an underlying PI layer and even peel off the PI layer when the display panel in the prior art performs excimer laser annealing on an amorphous silicon layer.

To achieve the above object, the present invention provides a display panel, including a first PI layer; the first barrier layer is arranged on the first PI layer; the buffer layer is arranged on one side, far away from the first PI layer, of the first blocking layer; the polycrystalline silicon layer is arranged on one side, far away from the first blocking layer, of the buffer layer; the laser shielding layer is arranged between the first PI layer and the first blocking layer; the laser shielding layer is arranged between the first blocking layer and the buffer layer; or/and the laser shielding layer is arranged between the buffer layer and the polycrystalline silicon layer.

One or more laser shielding layers are arranged between the PI layer and the polycrystalline silicon layer, so that laser generated when excimer laser annealing is carried out on the amorphous silicon layer can be effectively blocked, and the PI layer below the PI layer is prevented from being burnt and stripped.

Further, in other embodiments, the material of the laser shielding layer adopts Al₂O₃. In other embodiments, the material of the laser shielding layer may be other materials with low light transmittance and high temperature resistance, and is not limited toIn Al₂O₃The first PI layer is not burned when the excimer laser annealing is performed on the amorphous silicon layer.

Further, in other embodiments, the thickness of the laser shielding layer ranges from 1nm to 50 nm.

Further, in other embodiments, the display panel further includes a second barrier layer disposed on a side of the first PI layer away from the first barrier layer; the second PI layer is arranged on one side, far away from the first PI layer, of the second barrier layer; and the glass substrate is arranged on one side, far away from the second barrier layer, of the second PI layer.

Further, in other embodiments, the light transmittance of the laser shielding layer is less than 10%. When excimer laser annealing is carried out on the amorphous silicon layer, the PI layer is guaranteed not to be burnt, and the yield of the display panel is improved.

In order to achieve the above object, the present invention further provides a manufacturing method for manufacturing the display panel according to the present invention, the manufacturing method including the steps of: preparing a first PI layer; preparing a laser shielding layer on the first PI layer; preparing a first barrier layer on the laser shielding layer; or/and preparing a laser shielding layer on the first barrier layer; preparing a buffer layer on the first barrier layer; or/and preparing a laser shielding layer on the buffer layer; and preparing an amorphous silicon layer on the buffer layer.

Further, in other embodiments, the step of preparing the amorphous silicon layer further includes performing excimer laser annealing on the amorphous silicon layer to form a polysilicon layer.

One or more laser shielding layers are prepared between the PI layer and the polycrystalline silicon layer, so that laser generated when excimer laser annealing is carried out on the amorphous silicon layer can be effectively blocked, and the PI layer below the PI layer is prevented from being burnt and stripped.

Further, in other embodiments, the laser shielding layer is prepared by chemical deposition or inkjet printing.

Further, in other embodiments, wherein the first barrier layer and the buffer layer are prepared by chemical deposition.

Further, in other embodiments, the material of the laser shielding layer adopts Al₂O_3，The thickness range of the laser shielding layer is 1nm-50 nm. In other embodiments, the laser shielding layer may be made of other materials with low light transmittance and high temperature resistance, and is not limited to Al₂O₃The first PI layer is not burned when the excimer laser annealing is performed on the amorphous silicon layer.

Further, in other embodiments, the light transmittance of the laser shielding layer is less than 10%, and the PI layer is not burned when the amorphous silicon layer is subjected to excimer laser annealing, so that the yield of the display panel is improved.

In order to achieve the above object, the present invention further provides a display device including the display panel according to the present invention.

Compared with the prior art, the invention has the beneficial effects that: the invention provides a display panel, a preparation method thereof and a display device₂O₃，Al₂O₃The amorphous silicon laser is compact, low in light transmittance and high-temperature resistant, can effectively block laser when excimer laser annealing is carried out on the amorphous silicon layer, and prevents burn and peeling of the PI layer below.

Drawings

The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.

Fig. 1 is a schematic structural diagram of a display panel provided in the prior art;

fig. 2 is a schematic structural diagram of a display panel according to an embodiment of the present invention;

fig. 3 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present invention.

Description of the figures in the detailed description:

a display panel-100; a glass substrate-110;

a second PI layer-140; a second barrier layer-150;

a first PI layer-120; laser shielding layer-200;

a first barrier layer-130;

a buffer layer-160; amorphous silicon layer-170.