Semiconductor device and imaging device
阅读说明:本技术 半导体设备与成像设备 (Semiconductor device and imaging device ) 是由 横山孝司 冈干生 神田泰夫 于 2019-02-07 设计创作,主要内容包括:提供一种适合于高度集成的结构的半导体设备。该半导体设备具有:晶体管,具有栅极部、第一扩散层、以及第二扩散层;第一导电部;第二导电部,与第一导电部电绝缘;第一存储器元件,位于第一扩散层与第一导电部之间并且电连接至第一扩散层和第一导电部;以及第二存储器元件,位于第二扩散层与第二导电部之间并且电连接至第二扩散层和第二导电部。(A semiconductor device suitable for a highly integrated structure is provided. The semiconductor device has: a transistor having a gate portion, a first diffusion layer, and a second diffusion layer; a first conductive portion; a second conductive portion electrically insulated from the first conductive portion; a first memory element located between the first diffusion layer and the first conductive portion and electrically connected to the first diffusion layer and the first conductive portion; and a second memory element located between the second diffusion layer and the second conductive portion and electrically connected to the second diffusion layer and the second conductive portion.)
1. A semiconductor device, comprising:
a transistor including a gate portion, a first diffusion layer, and a second diffusion layer;
a first conductive portion;
a second conductive portion electrically insulated from the first conductive portion;
a first storage element located between the first diffusion layer and the first conductive portion and electrically coupled to each of the first diffusion layer and the first conductive portion; and
a second storage element located between the second diffusion layer and the second conductive portion and electrically coupled to each of the second diffusion layer and the second conductive portion.
2. The semiconductor device of claim 1, further comprising:
a third conductive portion that is disposed opposite to the first storage element and electrically coupled to the first diffusion layer, as viewed from the first diffusion layer; and
a fourth conductive portion that is disposed opposite to the second storage element and electrically coupled to the second diffusion layer, as viewed from the second diffusion layer.
3. The semiconductor device of claim 1, wherein the gate portion, the first conductive portion, and the second conductive portion all extend along a first direction.
4. The semiconductor device of claim 2, wherein the gate portion and the first through fourth conductive portions all extend along a first direction.
5. The semiconductor device according to claim 1, further comprising a semiconductor substrate having a first surface on which the gate portion is provided and a second surface positioned opposite to the first surface, wherein,
the first diffusion layer constitutes a portion of the semiconductor substrate near the first surface; and is
The second diffusion layer constitutes another portion of the semiconductor substrate near the first surface.
6. The semiconductor device of claim 5, further comprising:
a first insulating layer covering the second surface of the semiconductor substrate; and
a first connection portion and a second connection portion each penetrating the first insulating layer; wherein the content of the first and second substances,
the first storage element and the second storage element are each disposed opposite to the second surface, as viewed from the first insulating layer;
the first storage element is electrically coupled to the first diffusion layer through the first connection portion; and is
The second memory element is electrically coupled to the second diffusion layer through the second connection portion.
7. The semiconductor device of claim 6, further comprising:
a second insulating layer covering the first surface of the semiconductor substrate;
a third conductive portion and a fourth conductive portion each disposed opposite to the second surface as viewed from the second insulating layer;
a third connection portion penetrating the second insulating layer and electrically coupling the first diffusion layer and the third conductive portion to each other; and
a fourth connection portion penetrating the second insulating layer and electrically coupling the second diffusion layer and the fourth conductive portion to each other.
8. The semiconductor device according to claim 7, further comprising a controller that performs the following control:
setting an electric potential of the first conductive portion to a first electric potential, setting an electric potential of the fourth conductive portion to a second electric potential higher than the first electric potential, setting an electric potential of the gate portion to the second electric potential, and setting an electric potential of the second conductive portion and an electric potential of the third conductive portion to a third electric potential that is independent of all of the electric potential of the first conductive portion, the electric potential of the fourth conductive portion, and the electric potential of the gate portion, thereby writing first information in the first memory element; and is
Setting the potential of the first conductive portion to the second potential, setting the potential of the fourth conductive portion to the first potential, setting the potential of the gate portion to the second potential, and setting the potentials of the second conductive portion and the third conductive portion to the third potential, thereby writing second information in the first memory element.
9. The semiconductor device according to claim 8, wherein the controller comprises a potential control circuit capable of keeping the potential of the second conductive portion and the potential of the third conductive portion at the third potential.
10. The semiconductor device according to claim 7, further comprising a controller that performs the following control:
setting the potential of the second conductive portion to a first potential, setting the potential of the third conductive portion to a second potential higher than the first potential, setting the potential of the gate portion to the second potential, and setting the potential of the first conductive portion and the potential of the fourth conductive portion to a fourth potential that is independent of all of the potential of the second conductive portion, the potential of the third conductive portion, and the potential of the gate portion, thereby writing first information into the second memory element; and is
Setting the potential of the second conductive portion to the second potential, setting the potential of the third conductive portion to the first potential, setting the potential of the gate portion to the second potential, and setting the potential of the first conductive portion and the potential of the fourth conductive portion to the fourth potential, thereby writing second information in the second memory element.
11. The semiconductor device according to claim 10, wherein the controller comprises a potential control circuit capable of keeping the potential of the first conductive portion and the potential of the fourth conductive portion at the fourth potential.
12. The semiconductor device of claim 5, further comprising:
a first insulating layer covering the first surface of the semiconductor substrate;
a first connection portion and a second connection portion each penetrating the first insulating layer;
a third conductive portion that is provided opposite to the first surface as viewed from the first insulating layer and is electrically coupled to the first diffusion layer through the first connection portion; and
a fourth conductive portion that is disposed opposite to the first surface and electrically coupled to the second diffusion layer through the second connection portion, as viewed from the first insulating layer.
13. The semiconductor device of claim 12, further comprising:
a second insulating layer covering the second surface of the semiconductor substrate; and
a third connection portion and a fourth connection portion each penetrating the second insulating layer; wherein the content of the first and second substances,
the first conductive portion is disposed opposite to the second insulating layer and electrically coupled to the first diffusion layer through the third connection portion, as viewed from the first memory element; and is
The second conductive portion is disposed opposite to the second insulating layer and electrically coupled to the second diffusion layer through the fourth connection portion, as viewed from the second memory element.
14. The semiconductor device of claim 1, further comprising a fin comprising semiconductor material and extending in a second direction that intersects the first direction, wherein,
the first storage element and the second storage element are each coupled to a back side of the fin; and is
The gate portion, the first diffusion layer, and the second diffusion layer extend in the first direction and cover surfaces other than the back surface of the fin portion.
15. An image forming apparatus comprising:
a semiconductor device; and
an imaging element stacked on the semiconductor device;
the semiconductor device includes:
a transistor including a gate portion, a first diffusion layer, and a second diffusion layer;
a first conductive portion;
a second conductive portion electrically insulated from the first conductive portion;
a first storage element located between the first diffusion layer and the first conductive portion and electrically coupled to each of the first diffusion layer and the first conductive portion; and
a second storage element located between the second diffusion layer and the second conductive portion and electrically coupled to each of the second diffusion layer and the second conductive portion.
Technical Field
The present disclosure relates to a semiconductor device including a transistor and a memory element, and an imaging device including the semiconductor device.
Background
For a semiconductor integrated circuit including CMOS (complementary metal oxide semiconductor) transistors, higher integration and higher operation speed thereof have been studied. In recent years, switching from a volatile memory to a nonvolatile memory has been studied from the viewpoint of low power consumption, and for example, development of MRAM (magnetoresistive random access memory) has been proposed (for example, see PTL 1).
Reference list
Patent document
PTL 1: international publication No. WO 2007/066407
Disclosure of Invention
Incidentally, a semiconductor device including the semiconductor integrated circuit is expected to be more highly integrated. Accordingly, it is desirable to provide a semiconductor device having a structure suitable for higher integration, and an imaging device including the semiconductor device.
A semiconductor device as an embodiment of the present disclosure includes: a transistor including a gate portion, a source portion, and a drain portion; a first conductive portion; a second conductive portion electrically insulated from the first conductive portion; a first memory element located between the source portion and the first conductive portion and electrically coupled to each of the source portion and the first conductive portion; and a second memory element located between the drain portion and the second conductive portion and electrically coupled to each of the drain portion and the second conductive portion. Further, an imaging apparatus as an embodiment of the present disclosure includes the semiconductor apparatus described above.
In the semiconductor device and the imaging device as the embodiments of the present disclosure, the first storage element is coupled to a source portion of the transistor, and the second storage element is coupled to a drain portion of the transistor. Thus, for example, the overall footprint is smaller than if the first and second storage elements were coupled to the source portion.
The semiconductor device and the imaging device as embodiments of the present disclosure are suitable for higher integration. It should be noted that the effect of the present disclosure is not limited to this, and may be any effect described below.
Drawings
Fig. 1A is a cross-sectional view showing a configuration example of a semiconductor apparatus according to a first embodiment of the present disclosure.
Fig. 1B is a plan view showing a configuration example of the semiconductor apparatus shown in fig. 1A.
Fig. 1C is another plan view showing a configuration example of the semiconductor apparatus shown in fig. 1A.
Fig. 1D is a circuit diagram of the semiconductor apparatus shown in fig. 1A.
Fig. 2 is a cross-sectional view showing an example of the configuration of a memory portion of the memory element shown in fig. 1A.
Fig. 3 is a cross-sectional view showing an example of a configuration of each layer of the memory part shown in fig. 2.
Fig. 4A is an explanatory diagram for describing a method of writing first information into the first memory element of the semiconductor apparatus shown in fig. 1A.
Fig. 4B is an explanatory diagram for describing a method of writing second information into the first memory element of the semiconductor apparatus shown in fig. 1A.
Fig. 4C is an explanatory diagram for describing a method of writing first information into the second memory element of the semiconductor apparatus shown in fig. 1A.
Fig. 4D is an explanatory diagram for describing a method of writing second information into the second memory element of the semiconductor apparatus shown in fig. 1A.
Fig. 5A is a cross-sectional view showing a configuration example of a semiconductor device according to a second embodiment of the present disclosure.
Fig. 5B is a plan view showing a configuration example of the semiconductor apparatus shown in fig. 5A.
Fig. 5C is another plan view showing a configuration example of the semiconductor apparatus shown in fig. 5A.
Fig. 6A is a perspective view showing a configuration example of a semiconductor device according to a third embodiment of the present disclosure.
Fig. 6B is a cross-sectional view showing a configuration example of the semiconductor device shown in fig. 6A.
Fig. 6C is a cross-sectional view showing a modification of the semiconductor apparatus shown in fig. 6A.
Fig. 7A is a perspective view schematically showing an imaging apparatus as an application example of a semiconductor apparatus including the present disclosure.
Fig. 7B is a cross-sectional view showing a configuration example of the image forming apparatus shown in fig. 7A.
Fig. 8A is a cross-sectional view showing a configuration example of a semiconductor device as a reference example.
Fig. 8B is a plan view showing a semiconductor apparatus as a reference example shown in fig. 8A.
Fig. 9A is an explanatory diagram describing a method of writing second information into a first memory element of a semiconductor device as another modification of the present disclosure.
Fig. 9B is an explanatory diagram describing a method of writing first information into a first memory element of a semiconductor device as another modification of the present disclosure.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Note that the description is given in the following order.
1. First embodiment (semiconductor device including two memory elements on the back surface side of semiconductor substrate)
2. Second embodiment (semiconductor device including two memory elements on front surface side of semiconductor substrate)
3. Third embodiment (semiconductor device including two memory elements on the back surface side of fin-shaped semiconductor layer)
4. Application example (imaging device including semiconductor device and sensor device bonded together)
5. Other modifications
<1 > first embodiment >
[ configuration of semiconductor device 1 ]
Fig. 1A shows a cross-sectional configuration of a
As illustrated in fig. 1A to 1D, the
The
For example, the
The
For example, a portion of the
The
The element region R1 is further provided with a contact plug P1 as a first connection portion and a contact plug P2 as a second connection portion, the contact plug P1 and the contact plug P2 each extending to penetrate the insulating
For example, the
For example, the pair of
The word lines WL and the select lines SL1 and SL2 are embedded in the
For example, the multilayer
The multilayer
As described above, the insulating
The
The
For example, the storage section 32 in the storage element 30 is preferably a spin-injection magnetization-reversal storage element (STT-MTJ: spin transfer torque-magnetic tunnel junction) that stores information by reversing the magnetization direction of a storage layer described later by spin injection. STT-MTJs enable high speed reading and writing and are thus promising as non-volatile memories in place of volatile memories.
For example, the conductive layer 31 and the conductive layer 33 include a metal material such as Cu, Ti, W, or Ru. The conductive layer 31 and the conductive layer 33 preferably mainly include Cu, Al, or W, i.e., a metal other than the constituent material of the underlayer 32A or the capping layer 32E described later. Further, it is also possible to make the conductive layer 31 and the conductive layer 33 include Ti, TiN (titanium nitride), Ta, TaN (tantalum nitride), W, Cu, or Al, or a stacked structure thereof.
Fig. 2 shows an example of the configuration of the storage section 32. The memory section 32 has a configuration in which, for example, there are a bottom layer 32A, a magnetization fixed layer 32B, an insulating layer 32C, a memory layer 32D, and a cap layer 32E stacked in ascending order of distance from the conductive layer 31. That is, the memory element 30 has a bottom fixed structure including the magnetization fixed layer 32B, the insulating layer 32C, and the memory layer 32D in order from bottom to top in the stacking direction. Information is stored by changing the orientation of the magnetization M32D of the storage layer 32D using uniaxial anisotropy. The information "0" or "1" is defined by the relative angle (parallel or antiparallel) between the magnetization M32D of the storage layer 32D and the magnetization M32B of the magnetization fixed layer 32B.
The underlayer 32A and the capping layer 32E include a metal film such as Ta or Ru, or a stacked film thereof.
The magnetization pinned layer 32B is a reference layer serving as a reference (magnetization direction) of stored information of the storage layer 32D, and includes a ferromagnetic substance having a magnetic moment that fixes the direction of the magnetization M32B in a direction perpendicular to the film surface. For example, the magnetization pinned layer 32B includes Co-Fe-B.
It is desirable to change the direction of the magnetization M32B of the magnetization pinned layer 32B by reading and writing, however, it is not always necessary to be pinned in a specified direction. One of the reasons for this is that the direction of the magnetization M32B of the magnetization pinned layer 32B needs to be changed only less likely than the direction of the magnetization M32D of the storage layer 32D. For example, the magnetization pinned layer 32B only needs to have a higher coercive force and a larger magnetic film thickness or have a larger magnetic damping constant than the memory layer 32D. In order to fix the direction of the magnetization M32B, for example, it is sufficient to dispose an antiferromagnetic substance such as PtMn or IrMn in contact with the magnetization fixing layer 32B. Alternatively, the direction of the magnetization M32B may be directly fixed by magnetically coupling a magnetic substance in contact with the antiferromagnetic substance and the magnetization fixed layer 32B through a nonmagnetic substance such as Ru.
The insulating layer 32C is an intermediate layer serving as a tunnel barrier layer (tunnel insulating layer) and includes, for example, alumina or magnesium oxide (MgO). Among them, the insulating layer 32C preferably includes magnesium oxide. This enables the magnetoresistance change rate (MR ratio) to be increased and the efficiency of spin injection to be improved, thereby making it possible to reduce the current density for reversing the orientation of the magnetization M32D of the storage layer 32D.
The storage layer 32D includes a ferromagnetic substance having a magnetic moment that allows the direction of the magnetization M32D to be freely changed to a direction perpendicular to the film surface. For example, the storage layer 32D includes Co-Fe-B.
Fig. 3 shows an example of the configuration of the respective layers in the storage section 32 in more detail. The underlayer 32A has a configuration in which, for example, there are a Ta layer having a thickness of 3nm and a Ru film having a thickness of 25nm stacked in ascending order of distance from the conductive layer 31. The magnetization pinned layer 32B has a configuration in which, for example, there are a Pt layer having a thickness of 5nm, a Co layer having a thickness of 1.1nm, a Ru layer having a thickness of 0.8nm, and a (Co20Fe80)80B20 layer having a thickness of 1nm stacked in ascending order of distance from the conductive layer 31. The insulating layer 32C has a configuration in which, for example, there are a Mg layer having a thickness of 0.15nm, a MgO layer having a thickness of 1nm, and a Mg layer having a thickness of 0.15nm stacked in ascending order of distance from the conductive layer 31. For example, the memory layer 32D has a thickness t of 1.2 to 1.7nm and includes a (Co20Fe80)80B20 layer. The cap layer 32E has a configuration in which, for example, there are a Ta layer having a thickness of 1nm, a Ru layer having a thickness of 5nm, and a Ta layer having a thickness of 3nm stacked in ascending order of distance from the conductive layer 31.
The
[ operation of semiconductor device 1 ]
In the
Specifically, for example, as shown in fig. 4A, the controller CTRL sets the potential of the bit line BL1 to a first potential (e.g., low), and sets the potential of the select line SL1 to a second potential (high) higher than the first potential. This makes the electron e-Flows in the direction of the arrow, and thereby writes the first information "1" in the storage layer 32D of the
For example, as shown in fig. 4B, the controller CTRL sets the potential of the bit line BL1 to the second potential and the potential of the select line SL1 to the first potential. This makes the electron e-Flows in the direction of the arrow, and thereby writes the second information "0" in the storage layer 32D of the
For example, as shown in fig. 4C, the controller CTRL sets the potential of the bit line BL2 to a first potential and sets the potential of the select line SL2 to a second potential. This makes the electron e-Flows in the direction of the arrow, and thereby first information "1" is written in the storage layer 32D of the
For example, as shown in fig. 4D, the controller CTRL sets the potential of the bit line BL2 to the second potential, and sets the potential of the select line SL2 to the first potential. This makes the electron e-Flows in the arrow direction, and thereby second information "0" is written in the storage layer 32D of the
Depending on the order of magnitude relationship among the respective potentials of the select line SL1, the select line SL2, the bit line BL1, the bit line BL2, and the word line WL, a current is applied in a direction perpendicular to the film surface of the memory section 32, which causes the spin torque magnetization to be inverted. Thus, writing of information is performed by making the orientation of the magnetization M32D of the storage layer 32D parallel or antiparallel to the magnetization M32B of the magnetization fixed layer 32B and thereby changing the resistance value of the storage section 32 to be high or low.
Meanwhile, providing a magnetic layer (not shown) serving as an information reference on the storage layer 32D with a thin insulating film interposed therebetween and using a ferromagnetic tunnel current flowing via the insulating layer 32C makes it possible to read out information stored in the storage portion 32. Further, reading can also be performed by using the magnetoresistance effect.
[ action and Effect of semiconductor device 1 ]
In the
In contrast, according to the
<2 > second embodiment
[ configuration of semiconductor device 2]
Fig. 5A shows a cross-sectional configuration of a semiconductor device 2 as a second embodiment of the present disclosure. Further, fig. 5B and 5C show a planar configuration of the semiconductor device 2. Note that fig. 5B shows a planar configuration of the semiconductor device 2 viewed from the
In the
In comparison with the
[ action and Effect of semiconductor device 2]
Further, in this semiconductor device 2, effects similar to those of the
<3 > third embodiment
[ configuration of semiconductor device 3]
Fig. 6A is a perspective view showing the configuration of a
For example, the
The
Further, the
[ action and Effect of semiconductor device 3]
Further, in this
Further, in the present embodiment, the
[ configuration of
Fig. 6C is a cross-sectional view showing the configuration of a
<4. application example >
Fig. 7A shows a schematic configuration of the
For example, the
In the
The
Fig. 7B illustrates an embodiment of a specific cross-sectional configuration of the
The
The present disclosure has been described above with reference to the embodiments and the like; however, the present disclosure is not limited to the above-described embodiments and may be modified in various ways.
For example, the above embodiments have been described with reference to specific configurations of the
Further, the above-described first embodiment has been described with reference to an example in which the
Also, in the above-described embodiments and the like, the memory element having the bottom fixing structure is described; however, the present technology may employ a memory element having a top fixed structure. As used herein, the top fixed structure refers to a structure in which a memory layer, an insulating layer, and a magnetization fixed layer are stacked in this order from bottom to top in the stacking direction. It should be noted that in the case of a storage element having a top fixed structure, its behavior is opposite to that in the case where the storage element has a bottom fixed structure (high and low inversions written into the storage element).
It should be noted that the effects described herein are merely examples and the description thereof is non-limiting. Any other effect can also be achieved. Further, the present technology may have the following configuration.
(1) A semiconductor device, comprising:
a transistor including a gate portion, a first diffusion layer, and a second diffusion layer;
a first conductive portion;
a second conductive portion electrically insulated from the first conductive portion;
a first storage element located between the first diffusion layer and the first conductive portion and electrically coupled to each of the first diffusion layer and the first conductive portion; and
a second storage element located between the second diffusion layer and the second conductive portion and electrically coupled to each of the second diffusion layer and the second conductive portion.
(2) The semiconductor device according to (1), further comprising:
a third conductive portion, viewed from the first diffusion layer, disposed opposite the first storage element and electrically coupled to the first diffusion layer; and
the fourth conductive portion, viewed from the second diffusion layer, is disposed opposite the second storage element and is electrically coupled to the second diffusion layer.
(3) The semiconductor device according to (1) or (2), wherein the gate portion, the first conductive portion, and the second conductive portion all extend along the first direction.
(4) The semiconductor device according to (2), wherein the gate portion and the first to fourth conductive portions all extend in the first direction.
(5) The semiconductor device according to any one of (1) to (4), further comprising a semiconductor substrate having a first surface on which the gate portion is provided and a second surface positioned opposite to the first surface, wherein,
the first diffusion layer constitutes a portion of the semiconductor substrate near the first surface; and is
The second diffusion layer constitutes another portion of the semiconductor substrate near the first surface.
(6) The semiconductor device according to (5), further comprising:
a first insulating layer covering the second surface of the semiconductor substrate; and
a first connection portion and a second connection portion each penetrating the first insulating layer; wherein the content of the first and second substances,
the first storage element and the second storage element are each disposed opposite to the second surface, as viewed from the first insulating layer;
the first memory element is electrically coupled to the first diffusion layer through the first connection portion; and is
The second memory element is electrically coupled to the second diffusion layer through a second connection portion.
(7) The semiconductor device according to (6), further comprising:
a second insulating layer covering the first surface of the semiconductor substrate;
a third conductive portion and a fourth conductive portion each disposed opposite to the second surface as viewed from the second insulating layer;
a third connection portion penetrating the second insulating layer and electrically coupling the first diffusion layer and the third conductive portion to each other; and
a fourth connection portion penetrating the second insulating layer and electrically coupling the second diffusion layer and the fourth conductive portion to each other.
(8) The semiconductor device according to (7), further comprising a controller that performs the following control:
setting an electric potential of the first conductive portion to a first electric potential, setting an electric potential of the fourth conductive portion to a second electric potential higher than the first electric potential, setting an electric potential of the gate portion to the second electric potential, and setting an electric potential of the second conductive portion and an electric potential of the third conductive portion to a third electric potential independent of all of the electric potential of the first conductive portion, the electric potential of the fourth conductive portion, and the electric potential of the gate portion, thereby writing first information in the first memory element; and is
The potential of the first conductive portion is set to a second potential, the potential of the fourth conductive portion is set to a first potential, the potential of the gate portion is set to a second potential, and the potential of the second conductive portion and the potential of the third conductive portion are set to a third potential, thereby writing second information in the first memory element.
(9) The semiconductor device according to (8), wherein the controller includes a potential control circuit capable of maintaining the potential of the second conductive part and the potential of the third conductive part at a third potential.
(10) The semiconductor device according to (7), further comprising a controller that performs the following control:
setting an electric potential of the second conductive portion to a first electric potential, setting an electric potential of the third conductive portion to a second electric potential higher than the first electric potential, setting an electric potential of the gate portion to the second electric potential, and setting an electric potential of the first conductive portion and an electric potential of the fourth conductive portion to a fourth electric potential independent of all of the electric potential of the second conductive portion, the electric potential of the third conductive portion, and the electric potential of the gate portion, thereby writing first information in the second memory element; and is
Setting the potential of the second conductive portion to a second potential, setting the potential of the third conductive portion to a first potential, setting the potential of the gate portion to a second potential, and setting the potential of the first conductive portion and the potential of the fourth conductive portion to a fourth potential, thereby writing second information in the second memory element.
(11) The semiconductor device according to (10), wherein the controller includes a potential control circuit capable of maintaining the potential of the first conductive part and the potential of the fourth conductive part at a fourth potential.
(12) The semiconductor device according to any one of (5) to (11), further comprising:
a first insulating layer covering the first surface of the semiconductor substrate;
a first connection portion and a second connection portion each penetrating the first insulating layer;
a third conductive portion that is provided opposite to the first surface as viewed from the first insulating layer and is electrically coupled to the first diffusion layer through the first connection portion; and
a fourth conductive portion, viewed from the first insulating layer, disposed opposite the first surface and electrically coupled to the second diffusion layer through the second connection portion.
(13) The semiconductor device according to (12), further comprising:
a second insulating layer covering the second surface of the semiconductor substrate; and
a third connection portion and a fourth connection portion each penetrating the second insulating layer; wherein the content of the first and second substances,
a first conductive portion provided opposite to the second insulating layer and electrically coupled to the first diffusion layer through a third connection portion, as viewed from the first memory element; and is
The second conductive portion is disposed opposite to the second insulating layer and electrically coupled to the second diffusion layer through a fourth connection portion, as viewed from the second memory element.
(14) The semiconductor device of (1), further comprising a fin comprising a semiconductor material and extending in a second direction that intersects the first direction, wherein,
the first storage element and the second storage element are each coupled to the back surface of the fin; and is
The gate portion, the first diffusion layer, and the second diffusion layer extend in the first direction and cover surfaces other than the back surface of the fin portion.
(15) An image forming apparatus comprising:
a semiconductor device; and
an imaging element stacked on the semiconductor device;
the semiconductor device includes:
a transistor including a gate portion, a first diffusion layer, and a second diffusion layer;
a first conductive portion;
a second conductive portion electrically insulated from the first conductive portion;
a first storage element located between the first diffusion layer and the first conductive portion and electrically coupled to each of the first diffusion layer and the first conductive portion; and
a second storage element located between the second diffusion layer and the second conductive portion and electrically coupled to each of the second diffusion layer and the second conductive portion.
The present application claims priority from japanese patent application JP2018-39217, filed on 6.3.2018 to the japanese patent office, the entire contents of which are incorporated herein by reference.
It should be understood by those skilled in the art that various alterations, combinations, sub-combinations, and modifications may be made according to design requirements and other factors insofar as they come within the scope of the appended claims or the equivalents thereof.
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