阅读说明：本技术 多层一次性可编程永久存储器单元及其制备方法 (Multilayer One Time Programmable persistent memory unit and preparation method thereof ) 是由 彭泽忠 于 2017-08-28 设计创作，主要内容包括：多层一次性可编程永久存储器单元及其制备方法,涉及存储器技术。本发明提供一种多层一次性可编程永久存储器单元,含有：至少两层一次性可编程永久存储器模块,一层堆叠在另一层的上面；所述至少两层一次性可编程永久存储器模块的每一层,包含有用反相掺杂半导体材料制成的M行和N列,其中M和N是大于1正整数；薄绝缘电介质材料设置在所述至少两层一次性可编程永久存储器模块的每一层的所述M行和N列的相交处,在M行和N列之间；所述薄绝缘电介质材料在每一所述M行和N列的顶面和底面之一上。本发明的多层OTP永久存储器单元具有高存储密度。(Multilayer One Time Programmable persistent memory unit and preparation method thereof, is related to memory technology.The present invention provides a kind of multilayer One Time Programmable persistent memory unit, contains: at least two layers of One Time Programmable persistent storage module, a layer heap are stacked in the upper surface of another layer；Each layer of at least two layers One Time Programmable persistent storage module, comprising M row made of useful reverse phase doped semiconductor materials and N column, wherein M and N is greater than 1 positive integer；Each layer of the M row of at least two layers One Time Programmable persistent storage module and the intersection of N column is arranged in thin insulating dielectric substance, between M row and N column；The thin insulating dielectric substance is on one of top and bottom that each M row and N are arranged.Multilayer OTP persistent memory unit of the invention has high storage density.)