阅读说明：本技术 高性能光刻胶用酚醛树脂及其制备方法和用途 (Phenolic resin for high-performance photoresist and preparation method and application thereof ) 是由 王步泉 于 2020-06-12 设计创作，主要内容包括：本发明公开了一种高性能光刻胶用酚醛树脂及其制备方法和用途,所述酚醛树脂主要由甲酚、甲醛、催化剂制成。本发明光刻胶感度好、耐蚀刻。(The invention discloses a phenolic resin for a high-performance photoresist, a preparation method and application thereof. The photoresist has good sensitivity and is resistant to etching.)

1. A phenolic resin for high-performance photoresist is characterized in that: the phenolic resin is mainly prepared from the following raw materials in parts by weight:

70-90 parts of cresol

15-20 parts of formaldehyde

0.2-1 weight part of catalyst.

2. The phenol resin for high-performance photoresist according to claim 1, characterized in that: the cresol is selected from one or more of m-cresol, p-cresol and o-cresol.

3. The phenol resin for high-performance photoresist according to claim 1, characterized in that: the formaldehyde is one or more of 37% formaldehyde, 92% paraformaldehyde and 96% paraformaldehyde.

4. The phenol resin for high-performance photoresist according to claim 1, characterized in that: the catalyst is one or more of sulfuric acid, phosphoric acid and oxalic acid.

5. A method for preparing the phenolic resin for the high-performance photoresist according to claim 1, which is characterized by comprising the following steps: the method comprises the following steps: metering raw materials, heating for reaction, dehydrating, dephenolizing, cooling and granulating.

6. The method for preparing the phenolic resin for the high-performance photoresist according to claim 5, which is characterized in that: the dehydration is carried out at the temperature of 100-155 ℃; dephenolation was carried out at 155 ℃ and 190 ℃.

7. Use of the phenolic resin for high-performance photoresist according to claim 1 in the preparation of high-performance photoresist.

Technical Field

The invention relates to a phenolic resin and a preparation method and application thereof.

Background

The photoresist is one of the key materials for fine pattern processing in the microelectronic technology, and particularly, the development of large-scale and ultra-large-scale integrated circuits in recent years greatly promotes the research, development and application of the photoresist. The photoresist mainly comprises resin, a photosensitizer and a high-purity solvent. The phenolic resin is a high molecular adhesive which is coated at a high temperature and realizes adhesive bonding by cooling and hardening, and mainly comprises a high molecular polymer.

Typical current photoresist resins include phenolic resins, PHS, acryl, polyimide. Phenolic resins are used in a wide variety of applications for economic and efficiency reasons, and they can be applied thinly, uniformly and rapidly to a substrate. At present, phenolic resin comprises novolac resin, novolac epoxy resin, linear phenolic resin and resol, which generally have poor sensitivity and poor etching and are difficult to meet the requirements of high-performance photoresist.

Disclosure of Invention

The invention aims to provide a phenolic resin for photoresist with good photoresist sensitivity and high etching resistance and a preparation method and application thereof.

The technical solution of the invention is as follows:

a phenolic resin for high-performance photoresist is characterized in that: the phenolic resin is mainly prepared from the following raw materials in parts by weight:

70-90 parts of cresol

15-20 parts of formaldehyde

0.2-1 weight part of catalyst.

The cresol is selected from one or more of m-cresol, p-cresol and o-cresol, and the purity is more than 99%.

The formaldehyde is one or more of 37% formaldehyde, 92% paraformaldehyde and 96% paraformaldehyde, and the concentration deviation is within 1%.

The catalyst is one or more of sulfuric acid, phosphoric acid and oxalic acid, and the purity of the catalyst is more than 99%.

The method comprises the following steps: metering raw materials, heating for reaction, dehydrating, dephenolizing, cooling and granulating.

The dehydration is carried out at the temperature of 100-155 ℃; dephenolation was carried out at 155 ℃ and 190 ℃.

An application of phenolic resin for high-performance photoresist in preparing the high-performance photoresist.

The photoresist has good sensitivity and is resistant to etching.

Table 1 sensitivity and residual film property test data:

base material: the thickness of the silicon wafer film is as follows: 15000 Angstrom prebake conditions: 110 ℃ 90S

Exposure: canon camera solvent: TMAH (2.38%). 70S

	General resin	Resins of the invention
			Film thickness	14951	15025
mj	13.52	8.61
			Δ	100％	63.7％
Residual film rate	91％	98％

From the above table, it can be seen that the resin of the present invention has better sensitivity and smaller exposure energy than the conventional resin, and can shorten the manufacturing time of the product and improve the efficiency. In addition, after exposure, the residual film rate is higher, and the subsequent product performance is more favorably improved.

Table 2 corrosion resistance test:

base material: the thickness of the silicon wafer film is as follows: 15000 Angstrom prebake conditions: 110 ℃ 90S

Exposure: canon camera solvent: TMAH (2.38%). 70S

Hardening conditions are as follows: 135 ℃ 120S

After etching:

from the above table, it can be seen that the resin of the present invention is more excellent in corrosion resistance than the conventional resin, and can give a better product.

The present invention will be further described with reference to the following examples.

Example 1:

in the embodiment, the phenolic resin for the photoresist comprises the following raw material components in parts by weight:

the raw material components are measured into a reaction kettle, stirred and heated for 3 hours at the temperature of 100 ℃, dehydrated to 155 ℃, dephenolized to 190 ℃, and finally discharged, cooled and granulated.