阅读说明：本技术 一种采用电压驱动的bjt (BJT (bipolar junction transistor) driven by voltage ) 是由 唐红祥 于 2020-06-08 设计创作，主要内容包括：本发明涉及功率半导体器件领域,公开了一种采用电压驱动的BJT,包括N型硅片,N型硅片底部设有集电极,N型硅片顶部设有第一P阱,第一P阱内设有第一N扩散区,N型硅片顶部设有第二P阱,第二P阱内设有第二N扩散区,N型硅片顶部连接绝缘层,绝缘层上设有输出电极,输出电极穿过绝缘层分别与第一P阱和第一N扩散区电连接,绝缘层内设有控制电极,控制电极接收驱动集电极和输出电极导通的控制信号A,绝缘层在第二P阱对应处设有发射极和基极,发射极穿过绝缘层与第二N扩散区连接,输出电极与基极电连接,基极穿过绝缘层与第二P阱电连接,本发明将BJT的导通控制从电流驱动变为电压驱动,不用再额外设计大电流驱动电路,减少了BJT的应用成本。(The invention relates to the field of power semiconductor devices, and discloses a BJT (bipolar junction transistor) driven by voltage, which comprises an N-type silicon wafer, wherein the bottom of the N-type silicon wafer is provided with a collector, the top of the N-type silicon wafer is provided with a first P well, the first P well is internally provided with a first N diffusion region, the top of the N-type silicon wafer is provided with a second P well, the second P well is internally provided with a second N diffusion region, the top of the N-type silicon wafer is connected with an insulating layer, the insulating layer is provided with an output electrode, the output electrode penetrates through the insulating layer and is respectively and electrically connected with the first P well and the first N diffusion region, the insulating layer is internally provided with a control electrode, the control electrode receives a control signal A for driving the conduction of the collector and the output electrode, the insulating layer is provided with an emitter and a base electrode at the corresponding position of the second P well, the emitter penetrates through the insulating layer and is, and a large-current driving circuit is not additionally designed, so that the application cost of the BJT is reduced.)

1. A BJT driven with a voltage, comprising: comprises an N-type silicon wafer, a silicon wafer,

a collector electrode is arranged at the bottom of the N-type silicon wafer, at least one first P well is arranged at the top of the N-type silicon wafer, at least one first N diffusion region is arranged in the first P well, a second P well is also arranged at the top of the N-type silicon wafer, and a second N diffusion region is arranged in the second P well;

the top of the N-type silicon wafer is connected with an insulating layer, an output electrode is arranged on the insulating layer, the output electrode penetrates through the insulating layer and is respectively and electrically connected with the first P well and the first N diffusion region, a control electrode is further arranged in the insulating layer and used for receiving a control signal A for driving the collector electrode and the output electrode to be conducted, an emitter electrode and a base electrode are respectively arranged at the corresponding position of the second P well, the emitter electrode and the base electrode are separated by the insulating layer, the emitter electrode penetrates through the insulating layer and is electrically connected with the second N diffusion region, the output electrode is electrically connected with the base electrode, the base electrode penetrates through the insulating layer and is electrically connected with the second P well and used for receiving a control signal B for driving the collector electrode and the emitter electrode to be conducted.

2. The thyristor according to claim 1, wherein: two first N diffusion regions are arranged in the first P trap.

3. The thyristor according to claim 1, wherein: the N-type silicon wafer is divided into an N + layer and an N-layer.

4. The thyristor according to claim 2, wherein: the resistivity of the N + layer of the N-type silicon wafer is less than 0.1 omega cm, and the resistivity of the N-layer of the N-type silicon wafer is more than or equal to 0.1 omega cm.

Technical Field

The invention relates to the field of power semiconductor devices, in particular to a BJT driven by voltage.

Background

At present, the turn-on of the BJT, i.e. the bipolar junction transistor, is driven by current, when in use, a large current is input to the base of the BJT through the driving circuit, and then the collector and the emitter of the BJT are turned on. However, for some BJT application circuits, the driving circuit outputting a large current increases the application cost of the whole circuit.

Disclosure of Invention

In view of the defects of the background art, the invention provides a BJT driven by voltage, and aims to solve the technical problem that the conventional BJE adopts large-current driving, a corresponding driving circuit is required in practical application, and the application cost is increased.

In order to solve the technical problems, the invention provides the following technical scheme: a BJT driven by voltage comprises an N-type silicon wafer, wherein a collector is arranged at the bottom of the N-type silicon wafer, at least one first P well is arranged at the top of the N-type silicon wafer, at least one first N diffusion region is arranged in the first P well, a second P well is also arranged at the top of the N-type silicon wafer, and a second N diffusion region is arranged in the second P well;

the top of the N-type silicon wafer is connected with an insulating layer, an output electrode is arranged on the insulating layer, the output electrode penetrates through the insulating layer and is electrically connected with a first P well and a first N diffusion region respectively, a control electrode is further arranged in the insulating layer and is used for receiving a control signal A for driving a collector electrode and the output electrode to be conducted, an emitter electrode and a base electrode are arranged at the corresponding position of a second P well on the insulating layer respectively and are separated by the insulating layer, the emitter electrode penetrates through the insulating layer and is electrically connected with the second N diffusion region, the output electrode is electrically connected with the base electrode, and the base electrode penetrates through the insulating layer and is electrically connected with the second P well and is used.

Furthermore, two first N diffusion regions are arranged in the first P trap at intervals.

Further, the N-type silicon wafer is divided into an N + layer and an N-layer, wherein the resistivity of N-is more than or equal to 0.1 omega cm, and the resistivity of N + is less than 0.1 omega cm.

Compared with the prior art, the invention has the beneficial effects that: when the BJT is driven to be conducted, driving voltage is input to the control electrode, the anode collector and the output electrode are conducted at the moment, excitation connected with the collector flows into the base electrode through the output electrode, then the collector is conducted with the emitter, and the excitation can flow out through the collector and the emitter, so that the conduction control of the BJT is realized.

Drawings

The invention has the following drawings:

FIG. 1 is a schematic view of the BJT of embodiment 1;

FIG. 2 is a schematic view of the BJT of embodiment 2;

fig. 3 is a schematic circuit diagram of the present invention.

Detailed Description

The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic views illustrating only the basic structure of the present invention in a schematic manner, and thus show only the constitution related to the present invention.

As shown in fig. 1, a BJT driven by voltage includes an N-type silicon wafer 1, a collector 7 is disposed at the bottom of the N-type silicon wafer 1, a first P-well 2 is disposed at the top of the N-type silicon wafer 1, two first N-diffusion regions 3 are disposed in the first P-well 2, a second P-well 4 is further disposed at the top of the N-type silicon wafer 1, and a second N-diffusion region 5 is disposed in the second P-well 4;

the top of the N-type silicon chip 1 is connected with an insulating layer 7, an output electrode 8 is arranged on an insulating layer 6, the output electrode 8 penetrates through the insulating layer 7 and is respectively and electrically connected with a first P well 2 and a first N diffusion region 3, a control electrode 9 is further arranged in the insulating layer 7, the control electrode 9 is used for receiving a control signal A for driving a collector electrode 7 and the output electrode 8 to be conducted, an emitter electrode 10 and a base electrode 11 are respectively arranged at the corresponding position of a second P well 4 on the insulating layer 7, the emitter electrode 10 and the base electrode 11 are separated by the insulating layer 7, the emitter electrode 10 penetrates through the insulating layer 7 and is electrically connected with a second N diffusion region 5, the output electrode 8 is electrically connected with the base electrode 11, the base,

for receiving a control signal B for driving the collector 7 and the emitter 10 into conduction.

Furthermore, two first N diffusion regions 3 are disposed in the first P well 2.

Further, the N-type silicon wafer 1 is divided into an N + layer and an N-layer, wherein the resistivity of N-is not less than 0.1 omega cm, and the resistivity of N + is less than 0.1 omega cm.