阅读说明：本技术 一种钴基材抛光液及其应用 (Cobalt-based material polishing solution and application thereof ) 是由 刘卫丽 徐傲雪 宋志棠 于 2020-06-30 设计创作，主要内容包括：本发明涉及一种钴基材抛光液及其应用,按重量百分比,包括如下组分：液相载体50-80％；磨料0.1-10％；氧化剂≤1％；铵盐化合物0.005-20％；抑制剂0.1-100mM。本发明通过选择合适的氧化剂、铵盐化合物以及抑制剂并将他们合理组合,通过提高机械和化学作用来提高抛光速率,控制Co表面腐蚀情况以及改善表面质量,具有良好的应用前景。(The invention relates to a cobalt-based material polishing solution and application thereof, wherein the cobalt-based material polishing solution comprises the following components in percentage by weight: liquid phase carrier 50-80%; 0.1 to 10 percent of abrasive; oxidant is less than or equal to 1 percent; 0.005-20% of ammonium salt compound; 0.1-100mM inhibitor. The invention has good application prospect by selecting and reasonably combining the proper oxidant, ammonium salt compound and inhibitor, improving the polishing rate through improving mechanical and chemical actions, controlling the corrosion condition of the Co surface and improving the surface quality.)

1. A cobalt-based material polishing solution is characterized in that: comprises the following components in percentage by weight:

2. the polishing solution according to claim 1, wherein: the liquid phase carrier is deionized water.

3. The polishing solution according to claim 1, wherein: the abrasive is silica particles, cerium oxide particles or aluminum oxide particles.

4. The polishing solution according to claim 3, wherein: the particle size of the silicon dioxide particles is 5-100 nm.

5. The polishing solution according to claim 1, wherein: the oxidant is NaClO, KMnO₄、K₂Cr₂O₇And one or more of hydrogen peroxide.

6. The polishing solution according to claim 1, wherein: the ammonium salt compound is ammonium chloride, ammonium bicarbonate, ammonium carbonate, ammonium iodide, ammonium sulfate, ammonium bisulfate, ammonium nitrate, ammonium fluoride, ammonium bromide, ammonium molybdate, ammonium dimolybdate, ammonium lactate, ammonium chromate, ammonium fluoroborate, ammonium polyacrylate, ammonium formate, water-soluble ammonium polyphosphate, ammonium phosphomolybdate, ammonium oxalate, ammonium arsenate dihydrogen, ferrous ammonium sulfate hexahydrate, ammonium phosphate, ammonium phosphomolybdate, ammonium fluorotitanate, sodium ammonium phosphate, monoammonium glycyrrhizinate, ammonium bicarbonate, ammonium stearate, ammonium dichromate, ammonium tellurate, ammonium octamolybdate, monoammonium glycyrrhizinate, ammonium phthalate, ammonium titanyl oxalate, diammonium glycyrrhizinate, ammonium dodecamolybdate, ammonium borate tetrahydrate, ammonium sebacate, ammonium polyphosphate, chloroamphosphate, ammonium tetramolybdate, ammonium polyphosphate, ammonium molybdate solution, monoammonium glycyrrhizinate, ammonium oxalate, ammonium didecanodiate, ammonium acetate, ammonium glycolate, Ammonium nitrophosphate, ammonium molybdate, ammonium laurylacetate, ammonium nicotinate, ammonium hydrogen borate tetrahydrate, diammonium chloride phosphate, ammonium phosphate hydrochloride, modified ammonium polyphosphate, ammonium hydrogen urate, ammonium thiophosphate, triammonium phosphate trihydrate, diethylammonium hydrochloride, diammonium glycyrrhizinate, ammonium hydrogen borate tetrahydrate and hydroxylammonium hydrochloride.

7. The polishing solution according to claim 1, wherein: the inhibitor is one or more of diethanolamine, methyldiethanolamine salt, alkyl phosphate ester diethanolamine salt, iminodiacetic acid diethanolamine acetate, diethanolamine bisulfate, dodecyl sulfuric acid diethanolamine salt, clopyralid ethanolamine salt, diethanolamine sebacate and oleic acid diethanolamine salt.

8. The polishing solution according to claim 1, wherein: the pH value range of the polishing solution is 7.00-12.00.

9. Use of the cobalt-based material polishing solution according to claim 1.

Technical Field

The invention belongs to the field of polishing solution, and particularly relates to cobalt-based material polishing solution and application thereof.

Background

As device feature sizes continue to shrink, the use of copper as an interconnect material for interconnect lines in integrated circuit (BEOL) processes presents several challenges. These include a sharp increase in resistivity with decreasing thickness, non-conformal deposition at narrow trench widths of 20nm or less, and size limitations of diffusion barriers/liners. This has led to the search for new adhesion/barrier layers in Cu interconnects and new trench fill materials. In which the conventional adhesion/barrier layer (Ta/TaN) in Cu interconnect structures no longer meets the requirements and needs to be replaced by other materials, such as Ru, Co, Ir or their alloys, have gradually come into the eye of researchers. All adhesion/barrier replacement materials in copper interconnects, Co, have been reported to have lower resistivity, high thermal stability, and excellent barrier and adhesion properties and its compatibility with direct electroplated copper. The results indicate that cobalt has the potential to be used as an adhesion layer in copper. Co is a promising alternative interconnect material Cu, which has a lower resistivity at smaller dimensions (about 10nm) than copper, and can meet the interconnect line challenges of the first two metal layers M1 and M2 at these lower nodes.

With the development of integrated circuit metal interconnection technology and the increase of the number of wiring layers, Chemical Mechanical Polishing (CMP) has been widely used for surface planarization in the chip manufacturing process. In the polishing process of the cobalt interconnection process, some complexing agents or chelating agents are often introduced into the cobalt polishing solution, and have a strong complexing or chelating effect on metal ions, so that the polishing rate of cobalt can be remarkably improved. But when the polishing rate is too fast, the surface quality of cobalt may be deteriorated.

Disclosure of Invention

The invention aims to solve the technical problem of providing a cobalt-based material polishing solution and application thereof, which has good application prospect by selecting and reasonably combining a proper oxidant, an ammonium salt compound and an inhibitor, improving the polishing rate through improving mechanical and chemical actions, controlling the corrosion condition of a Co surface and improving the surface quality.

The invention provides a cobalt-based material polishing solution which comprises the following components in percentage by weight:

the liquid phase carrier is deionized water.

The abrasive is silica particles, cerium oxide particles or aluminum oxide particles.

The particle size of the silicon dioxide particles is 5-100 nm. The particle size of the silica particles is a single particle size. The single particle size generally means that the particle size of the silica particles used remains consistent. The silica particles are preferably spherical silica particles or non-spherical silica particles.

The oxidant is NaClO, KMnO₄、K₂Cr₂O₇And one or more of hydrogen peroxide.

The ammonium salt compound is ammonium chloride, ammonium bicarbonate, ammonium carbonate, ammonium iodide, ammonium sulfate, ammonium bisulfate, ammonium nitrate, ammonium fluoride, ammonium bromide, ammonium molybdate, ammonium dimolybdate, ammonium lactate, ammonium chromate, ammonium fluoroborate, ammonium polyacrylate, ammonium formate, water-soluble ammonium polyphosphate, ammonium phosphomolybdate, ammonium oxalate, ammonium arsenate dihydrogen, ferrous ammonium sulfate hexahydrate, ammonium phosphate, ammonium phosphomolybdate, ammonium fluorotitanate, sodium ammonium phosphate, monoammonium glycyrrhizinate, ammonium bicarbonate, ammonium stearate, ammonium dichromate, ammonium tellurate, ammonium octamolybdate, monoammonium glycyrrhizinate, ammonium phthalate, ammonium titanyl oxalate, diammonium glycyrrhizinate, ammonium dodecamolybdate, ammonium borate tetrahydrate, ammonium sebacate, ammonium polyphosphate, chloroamphosphate, ammonium tetramolybdate, ammonium polyphosphate, ammonium molybdate solution, monoammonium glycyrrhizinate, ammonium oxalate, ammonium didecanodiate, ammonium acetate, ammonium glycolate, Ammonium nitrophosphate, ammonium molybdate, ammonium laurylacetate, ammonium nicotinate, ammonium hydrogen borate tetrahydrate, diammonium chloride phosphate, ammonium phosphate hydrochloride, modified ammonium polyphosphate, ammonium hydrogen urate, ammonium thiophosphate, triammonium phosphate trihydrate, diethylammonium hydrochloride, diammonium glycyrrhizinate, ammonium hydrogen borate tetrahydrate and hydroxylammonium hydrochloride. The ammonium salt compound has ammonium ions present in the polishing solution system, with ammonium sulfate being preferred.

The inhibitor is one or more of diethanolamine, methyldiethanolamine salt, alkyl phosphate ester diethanolamine salt, iminodiacetic acid diethanolamine acetate, diethanolamine bisulfate, dodecyl sulfuric acid diethanolamine salt, clopyralid ethanolamine salt, diethanolamine sebacate and oleic acid diethanolamine salt. The inhibitor belongs to an adsorption film type corrosion inhibitor in a polishing solution system, and forms an adsorption film on the metal surface to inhibit corrosion reaction, wherein diethanolamine is preferred.

The pH value range of the polishing solution is 7.00-12.00.

The polishing solution is a Chemical Mechanical Polishing (CMP) solution.

The invention also provides an application of the cobalt-based material polishing solution.

Advantageous effects

The invention has good application prospect by selecting and reasonably combining the proper oxidant, ammonium salt compound and inhibitor, improving the polishing rate through improving mechanical and chemical actions, controlling the corrosion condition of the Co surface and improving the surface quality.

Drawings

FIG. 1 is a view of the surface of a cobalt plate after polishing with the present invention.

Detailed Description

The invention will be further illustrated with reference to the following specific examples. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Further, it should be understood that various changes or modifications of the present invention may be made by those skilled in the art after reading the teaching of the present invention, and such equivalents may fall within the scope of the present invention as defined in the appended claims.