阅读说明：本技术 一种半导体设备 (Semiconductor device ) 是由 张文强 史小平 兰云峰 秦海丰 纪红 赵雷超 于 2019-02-15 设计创作，主要内容包括：本发明提供一种半导体设备,该半导体设备可避免载流气体与工艺气体源直接接触,进而避免工艺气体在载流气体中的含量达到饱和。本发明的半导体设备的供气管路中载流气体所携带的工艺气体更少,在原子层沉积反应中多余的工艺气体也更少,从而可以避免由过量的工艺气体引起的薄膜颗粒掺杂问题。(The invention provides a semiconductor device which can prevent a carrier gas from directly contacting a process gas source, thereby preventing the content of the process gas in the carrier gas from being saturated. The gas supply pipeline of the semiconductor equipment has less process gas carried by carrier gas and less redundant process gas in atomic layer deposition reaction, thereby avoiding the problem of doping of film particles caused by excessive process gas.)

1. A semiconductor device, the semiconductor device includes a gas supply line and a process chamber, the gas supply line includes a plurality of gas supply units, each gas supply unit includes a carrier gas pipe and a process gas pipe, in each gas supply unit, the carrier gas pipe with the process gas pipe communicates, an outlet end of the carrier gas pipe becomes an outlet of the gas supply unit, a plurality of the outlet of the gas supply unit all communicates with the process chamber, characterized in that at least one of the plurality of gas supply units is a first gas supply unit, an extending direction of the process gas pipe of the first gas supply unit intersects an extending direction of the carrier gas pipe of the first gas supply unit, and the process gas pipe of the first gas supply unit selectively communicates with the carrier gas pipe of the first gas supply unit, so that the carrier gas introduced through the inlet end of the carrier gas pipe of the first gas supply unit can communicate the process gas pipe of the first gas supply unit through the process gas pipe of the first gas supply unit The process gas introduced into the carrier gas pipe of the first gas supply unit is blown to the outlet of the first gas supply unit.

2. The semiconductor apparatus according to claim 1, wherein at least one of the gas supply units further comprises a dilution gas pipe, an outlet end of the dilution gas pipe is connected between a connection of a process gas pipe of the gas supply unit including the dilution gas pipe and a carrier gas pipe of the gas supply unit including the dilution gas pipe and an outlet of the gas supply unit including the dilution gas pipe, and the dilution gas pipe is selectively communicated with the carrier gas pipe of the gas supply unit including the dilution gas pipe.

3. The semiconductor apparatus according to claim 2, wherein the first gas supply unit includes two of the dilution gas pipes.

4. The semiconductor device according to claim 3, wherein the first gas supply unit further comprises a purge tube, an inlet end of the purge tube is communicated with one of the diluent gas tubes of the first gas supply unit, an outlet end of the purge tube is communicated with the carrier gas tube of the first gas supply unit, and the outlet end of the purge tube is positioned between the inlet end of the carrier gas tube of the first gas supply unit and an intersection of the process gas tube of the first gas supply unit and the carrier gas tube in the first gas supply unit, the purge tube selectively communicating the carrier gas tube of the first gas supply unit with the diluent gas tube connected to the inlet end of the purge tube.

5. The semiconductor device according to claim 3 or 4, wherein the plurality of gas supply units further include a second gas supply unit, the second gas supply unit includes the diluent gas pipe, the process gas pipe of the second gas supply unit includes a carrier gas branch pipe, a process gas branch pipe, and a communication branch pipe, an inlet end of the carrier gas branch pipe and an outlet end of the process gas branch pipe are both selectively communicated with the carrier gas pipe of the second gas supply unit, one end of the communication branch pipe is connected between the inlet end and the outlet end of the carrier gas branch pipe, and the other end of the communication branch pipe is connected between the inlet end and the outlet end of the process gas branch pipe, so that the carrier gas branch pipe and the process gas branch pipe are selectively communicated through the communication branch pipe.

6. The semiconductor apparatus according to claim 5, wherein the atomic layer deposition apparatus further comprises a trimethylaluminum source bottle and a water vapor source bottle, the process gas pipe of the first gas supply unit communicates with the trimethylaluminum source bottle, and both the outlet end of the carrier gas branch pipe and the inlet end of the process gas branch pipe of the second gas supply unit communicate with the water vapor source bottle.

7. The semiconductor device according to claim 6, wherein a cooling liquid channel is formed on a side wall of the trimethylaluminum source bottle.

8. The semiconductor apparatus according to any one of claims 1 to 4, wherein the gas supply line further comprises a main duct, and the inlet end of the carrier gas pipe of each gas supply unit communicates with the main duct.

9. The semiconductor apparatus according to any one of claims 1 to 4, wherein the process chamber further comprises an exhaust pipe, one end of the exhaust pipe communicates with the inside of the process chamber, and the other end of the exhaust pipe is located outside the process chamber.

10. The semiconductor apparatus according to any one of claims 1 to 4, wherein the extending direction of the process gas tubes of the first gas supply unit is perpendicular to the extending direction of the carrier gas tubes of the first gas supply unit.

Technical Field

The invention relates to the field of microelectronic processing equipment, in particular to semiconductor equipment.

Background

With the development of the semiconductor industry, integrated circuit devices are gradually becoming diversified and miniaturized. It is important to precisely control the thickness and uniformity of the film and maintain the coverage of a high aspect ratio. The Atomic Layer Deposition (ALD) technique can precisely control the film thickness and has good shape retention. The advantages of atomic layer deposition techniques are becoming more and more apparent as the size of integrated circuit devices decreases.

Atomic layer deposition is one of the methods for vapor deposition of thin films, and when an atomic layer deposition process is performed, two process gases participating in the thin film deposition alternately enter a process chamber and perform a chemical reaction after being adsorbed on the surface of a substrate.

In the prior art, in order to avoid waste caused by directly introducing high-purity process gas, inert carrier gas is introduced into a process gas source, and the process gas mixed in the carrier gas is loaded into a process chamber by using the carrier gas flowing out of the process gas source.

However, the film prepared by the method is easy to generate particles, and the quality of the film is seriously affected, so how to improve the atomic layer deposition equipment or the atomic layer deposition process to improve the quality of the atomic layer deposition film becomes a technical problem to be solved in the field.

Disclosure of Invention

The invention aims to provide a semiconductor device for atomic layer deposition. The semiconductor device can remarkably reduce the content of the process gas used in the atomic layer deposition process in the carrier gas.

In order to achieve the above object, as one aspect of the present invention, there is provided a semiconductor apparatus including a gas supply line and a process chamber, the gas supply line including a plurality of gas supply units, each gas supply unit including a carrier gas pipe and a process gas pipe, the carrier gas pipe communicating with the process gas pipe in each gas supply unit, an outlet end of the carrier gas pipe becoming an outlet of the gas supply unit, the outlets of the plurality of gas supply units each communicating with the process chamber, wherein at least one of the plurality of gas supply units is a first gas supply unit, an extending direction of the process gas pipe of the first gas supply unit intersects with an extending direction of the carrier gas pipe of the first gas supply unit, and the process gas pipe of the first gas supply unit selectively communicates with the carrier gas pipe of the first gas supply unit, so that the carrier gas introduced through the inlet end of the carrier gas pipe of the first gas supply unit can blow the process gas introduced through the process gas pipe of the first gas supply unit into the carrier gas pipe of the first gas supply unit to the outlet of the first gas supply unit.

Preferably, at least one of the gas supply units further includes a dilution gas pipe, an outlet end of the dilution gas pipe is connected between a connection of a process gas pipe of the gas supply unit including the dilution gas pipe and a carrier gas pipe of the gas supply unit including the dilution gas pipe and an outlet of the gas supply unit including the dilution gas pipe, and the dilution gas pipe is selectively communicated with the carrier gas pipe of the gas supply unit including the dilution gas pipe.

Preferably, the first gas supply unit includes two dilution gas pipes.

Preferably, the first gas supply unit further comprises a purging pipe, the inlet end of the purging pipe is communicated with a dilution gas pipe of the first gas supply unit, the outlet end of the purging pipe is communicated with a carrier gas pipe of the first gas supply unit, the outlet end of the purging pipe is located at the inlet end of the carrier gas pipe of the first gas supply unit and between the intersection of the process gas pipe of the first gas supply unit and the carrier gas pipe in the first gas supply unit, and the purging pipe selectively communicates the carrier gas pipe of the first gas supply unit with the dilution gas pipe connected with the inlet end of the purging pipe.

Preferably, it is a plurality of the gas supply unit still includes the second gas supply unit, the second gas supply unit includes the diluent gas pipe, the process gas pipe of second gas supply unit includes carrier gas branch pipe, process gas branch pipe and intercommunication branch pipe, the entry end of carrier gas branch pipe with the exit end of process gas branch pipe all with the carrier gas pipe of second gas supply unit selectively communicates, the one end of intercommunication branch pipe is connected to between the entry end and the exit end of carrier gas branch pipe, the other end of intercommunication branch pipe is connected to between the entry end and the exit end of process gas branch pipe, make the carrier gas branch pipe with the process gas branch pipe passes through intercommunication branch pipe selectively communicates.

Preferably, the atomic layer deposition equipment further comprises a trimethylaluminum source bottle and a water vapor source bottle, the process gas pipe of the first gas supply unit is communicated with the trimethylaluminum source bottle, and the outlet end of the current-carrying gas branch pipe of the second gas supply unit and the inlet end of the process gas branch pipe are both communicated with the water vapor source bottle.

Preferably, a cooling liquid channel is formed on the side wall of the trimethylaluminum source bottle.

Preferably, the gas supply line further comprises a main pipe, and an inlet end of the carrier gas pipe of each gas supply unit is communicated with the main pipe.

Preferably, the process chamber further comprises an exhaust pipe, one end of the exhaust pipe is communicated with the inside of the process chamber, and the other end of the exhaust pipe is located outside the process chamber.

Preferably, an extending direction of the process gas tubes of the first gas supply unit is perpendicular to an extending direction of the carrier gas tubes of the first gas supply unit.

Compared with the scheme that the carrier gas is directly introduced into the process gas source and is mixed with the process gas in the prior art, the process chamber disclosed by the invention has the advantages that the amount of the process gas mixed into the carrier gas introduced into the process chamber is less, so that after each step of atomic layer deposition reaction, redundant process gas is not easy to leave in the process chamber, and the problem of doping of film particles caused by excessive process gas can be avoided.

Drawings

The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:

FIG. 1 is a schematic diagram of a semiconductor device provided by the present invention;

fig. 2 is a schematic view of a gas supply line of the semiconductor apparatus of fig. 1.

Description of the reference numerals

MFC1-MFC 5: mass flow controllers PV1-PV 13: one-stage control valve

MV1 to MV 7: the secondary control valve 1: semiconductor device with a plurality of semiconductor chips

10: the air supply line 20: process chamber

21: chamber wall 22: spray head

23: base station 100: first air supply unit

200: second air supply unit 110, 210: carrier gas tube

120: process gas tubes 130, 140, 230: diluent gas pipe

150: the purge pipe 221: carrier gas branch pipe

222: process gas branch pipe 223: communicating branch pipe

300: main pipe

Detailed Description

The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.

Through repeated research by the inventors of the present invention, the reason why particles appear on the thin film in the existing atomic layer deposition technology is as follows:

for atomic layer deposition, the most desirable reaction regime is for each process gas to be adsorbed as a layer of molecules on the substrate base plate. However, in the prior art, the carrier gas is directly introduced into the process gas source, which causes a large amount of process gas to be mixed in the carrier gas, so that the amount of process gas in the process chamber is far higher than the amount required for reaction, and the excessive process gas is dispersed in the chamber or adsorbed on the surfaces of the chamber wall and the showerhead, etc., and reacts with other types of process gas to generate particles, which fall on the substrate, thereby seriously affecting the film quality. Therefore, the root cause for the occurrence of particles affecting the film quality in the prior art is excessive amount of process gas entering the process chamber.

As one aspect of the present invention, as shown in fig. 1 and 2, there is provided a semiconductor apparatus 1, the semiconductor apparatus 1 comprising a gas supply line 10 and a process chamber 20, the gas supply line 10 comprising a plurality of gas supply units, each gas supply unit comprising a carrier gas pipe and a process gas pipe, in each gas supply unit, the carrier gas pipe communicating with the process gas pipe, an outlet end of each carrier gas pipe becoming an outlet of the gas supply unit, outlets of a plurality of said gas supply units communicating with the process chamber 20.

As shown in fig. 1 and 2, at least one of the plurality of gas supply units is a first gas supply unit 100, an extending direction of the process gas pipe 120 of the first gas supply unit 100 crosses an extending direction of the carrier gas pipe 110 of the first gas supply unit 100, and the process gas pipe 120 of the first gas supply unit 100 is selectively communicated with the carrier gas pipe 110 of the first gas supply unit 100, so that the carrier gas introduced through the inlet end of the carrier gas pipe 110 of the first gas supply unit 100 can blow the process gas introduced through the process gas pipe 120 of the first gas supply unit 100 to the carrier gas pipe 110 of the first gas supply unit 100 to the outlet of the first gas supply unit 100.

In the semiconductor apparatus 1 of the present invention, the carrier gas pipe 110 and the process gas source are connected to each other through only one process gas pipe 120. When a carrier gas having a certain flow rate passes through the carrier gas pipe 110, the pressure inside the carrier gas pipe 110 will be lower than the pressure of the process gas at the inlet end of the process gas pipe 120. Under the action of the pressure difference, the process gas enters the carrier gas tube 110 through the process gas tube 120, mixes with the carrier gas in the carrier gas tube 110, and is finally transported to the process chamber 20 for the ald reaction.

Compared with the scheme that the carrier gas is directly introduced into the process gas source and mixed with the process gas in the prior art, the semiconductor equipment 1 provided by the invention has the advantages that the amount of the process gas mixed in the carrier gas is less when the atomic layer deposition process is executed, so that redundant process gas is not easy to remain in the process chamber after each step of atomic layer deposition reaction, and the problem of film particle doping caused by excessive process gas can be avoided.

Here, it should be noted that the phrase "the process gas pipe 120 is selectively communicated with the carrier gas pipe 110" means that the process gas pipe 120 is controlled to be communicated with the carrier gas pipe 110 when the process gas at the inlet end of the process gas pipe 120 needs to be introduced into the process chamber, and the process gas pipe 120 is controlled to be disconnected when the process gas does not need to be introduced.

Preferably, the selective communication between the process gas pipe 120 and the carrier gas pipe 110 may be achieved by providing an on-off valve on the process gas pipe 120, which is opened when the process gas at the inlet end of the process gas pipe 120 needs to be introduced into the process chamber, and closed when the process gas does not need to be introduced. For example, in the embodiment shown in fig. 1, the process gas pipe 120 is provided with a primary control valve PV11, and the primary control valve PV11 is opened or closed to control whether the process gas pipe 120 is communicated with the carrier gas pipe 110.

In order to dilute the process gas as much as possible and reduce the amount of the process gas introduced into the process chamber so that the gas molecules deposited on the substrate are in a single layer, it is preferable that at least one of the gas supply units further includes a dilution gas pipe, an outlet end of the dilution gas pipe is connected between a connection of the process gas pipe of the gas supply unit including the dilution gas pipe and the carrier gas pipe of the gas supply unit including the dilution gas pipe and an outlet of the gas supply unit including the dilution gas pipe, and the dilution gas pipe is selectively communicated with the carrier gas pipe of the gas supply unit including the dilution gas pipe.

Taking the embodiment shown in fig. 1 as an example, the first gas supply unit 100 includes a dilution gas pipe 130 (and a dilution gas pipe 140), an outlet end of the dilution gas pipe 130 (and the dilution gas pipe 140) is connected between a connection of the process gas pipe 120 and the carrier gas pipe 110 and an outlet of the first gas supply unit 100, and the dilution gas pipe 130 is selectively communicated with the carrier gas pipe 110.

Preferably, the selective communication between each dilution gas tube and its corresponding carrier gas tube is achieved by providing an on-off valve on the dilution gas tube. For example, in the embodiment shown in fig. 1, the dilution gas pipe 130, the dilution gas pipe 140, and the dilution gas pipe 230 are respectively provided with a primary control valve PV8, a primary control valve PV7, and a primary control valve PV6, and whether each dilution gas pipe communicates with its corresponding carrier gas pipe can be controlled by opening and closing the three valves.

The invention improves the content of the carrier gas in the mixed gas output from the outlet of each gas supply unit by arranging the diluent gas pipe in each gas supply unit, thereby reducing the content of the process gas.

In order to further reduce the content of the process gas having a large saturated vapor pressure in the carrier gas, it is preferable that the first gas supply unit 100 includes a dilution gas pipe 130 and a dilution gas pipe 140, as shown in fig. 1 and 2.

When the process gas required for the reaction includes a process gas having a relatively large saturated vapor pressure (e.g., a gas such as trimethylaluminum), the first gas supply unit 100 including two dilution gas pipes is used to transport the process gas having a relatively large saturated vapor pressure, so that the content of the process gas in the mixed gas can be further reduced.

Preferably, the first gas supply unit 100 further includes a purge tube 150, an inlet end of the purge tube 150 communicates with the diluent gas tube 130 of the first gas supply unit 100, an outlet end of the purge tube 150 communicates with the carrier gas tube 110, and an outlet end of the purge tube 150 is located between the inlet end of the carrier gas tube 110 and the intersection of the process gas tube 120 and the carrier gas tube 110, the purge tube 150 selectively communicating the carrier gas tube 110 with the diluent gas tube 130.

Preferably, selective communication between the dilution gas tube 130 and the carrier gas tube 110 may be achieved by providing an on-off valve on the purge tube 150. For example, in the embodiment shown in fig. 1, the purge pipe 150 is provided with a primary control valve PV9, and whether the dilution gas pipe 130 and the carrier gas pipe 110 are communicated or not can be controlled by opening and closing the primary control valve PV 9.

According to the invention, by arranging the purging pipe 150 and the primary control valve PV9, when the process gas with larger vapor pressure remained in the carrier gas pipe 110 is purged, the primary control valve PV9 can be opened, so that the carrier gas in one dilution pipe is mixed with the carrier gas pipe 110, the efficiency of discharging the remained process gas from the carrier gas pipe 110 can be effectively improved, the remained amount of the process gas with larger saturated vapor pressure in the carrier gas pipe 110 is further reduced, and the phenomenon that the remained process gas is attached to a pipeline to influence the next atomic layer deposition reaction is avoided.

Further preferably, as shown in fig. 1 and 2, the plurality of gas supply units further includes a second gas supply unit 200, the second gas supply unit 200 includes a dilution gas pipe 230, the process gas pipe of the second gas supply unit 200 includes a carrier gas branch pipe 221, a process gas branch pipe 222, and a communication branch pipe 223, an inlet end of the carrier gas branch pipe 221 and an outlet end of the process gas branch pipe 222 are both selectively communicated with the carrier gas pipe 210, one end of the communication branch pipe 223 is connected between the inlet end and the outlet end of the carrier gas branch pipe 221, and the other end of the communication branch pipe 223 is connected between the inlet end and the outlet end of the process gas branch pipe 222, such that the carrier gas branch pipe 221 and the process gas branch pipe 222 are selectively communicated through the communication branch pipe 223.

Preferably, as shown in fig. 1 and 2, selective communication between the carrier gas branch pipe 221 and the carrier gas pipe 210 may be achieved by providing a primary switching valve PV2 on the carrier gas branch pipe 221; selective communication between the process gas branch pipe 222 and the carrier gas pipe 210 is achieved by providing a primary switching valve PV3 on the process gas branch pipe 222; selective communication between carrier gas branch pipe 221 and process gas branch pipe 222 is achieved by providing a two-stage switching valve MV1 on communication branch pipe 223.

When the process gas contains process gas (e.g., water vapor) with smaller saturated vapor pressure, the carrier gas branch pipe 221 is used to introduce all the carrier gas in the carrier gas pipe 210 into the process gas source, so that the content of the process gas in the carrier gas is saturated, and the mixed gas saturated with the process gas returns to the carrier gas pipe 210 through the process gas branch pipe 222, so as to increase the content of the process gas with smaller saturated vapor pressure, so as to maintain the balance of different process gas contents.

Preferably, as shown in fig. 1 and 2, the gas supply line 10 further includes a main duct 300, and the inlet ends of the carrier gas pipes of the respective gas supply units are communicated with the main duct 300.

The same type of carrier gas is introduced into each carrier gas pipe through one main pipeline 300, so that the pipeline structure is simplified, the recycled waste is more single, and the recycling of the gas is more convenient.

Preferably, mass flow controller MFC1 is mounted on carrier gas tube 110, mass flow controller MFC2 is mounted on dilution gas tube 130, mass flow controller MFC3 is mounted on dilution gas tube 140, mass flow controller MFC4 is mounted on carrier gas tube 210, and mass flow controller MFC5 is mounted on dilution gas tube 230. The 5 mass flow controllers can realize the accurate control of the gas supply quantity of each gas supply unit, thereby realizing the accurate control of the proportion of different process gases, ensuring that the process gases react more fully during the atomic layer deposition and further reducing the residue of the process gases.

Preferably, as shown in FIG. 1, the process chamber 20 includes a chamber wall 21, a showerhead 22, and a pedestal 23. The spray head 22 is connected with the outlet of each gas supply unit, and when the atomic layer deposition reaction is carried out, the process gas is fully dispersed in the process cavity 20 through the spray head 22, so that the process gas is fully contacted with the substrate; after the atomic layer deposition reaction is finished, the carrier gas purges the process chamber 20 through the spray head 22, so as to ensure that the residual process gas is removed. The susceptor 23 is used to heat the gas in the process chamber 20 to a suitable reaction temperature.

Preferably, as shown in fig. 1, when the gas supply line 10 includes the first gas supply unit 100 and the second gas supply unit 200, the semiconductor apparatus 1 further includes a trimethyl aluminum (TMA) source bottle and water vapor (H)₂O) source bottle. The process gas pipe 120 of the first gas supply unit 100 is communicated with the trimethylaluminum source bottle, the outlet end of the carrier gas branch pipe 221 of the second gas supply unit 200 and the inlet of the process gas branch pipe 222The ends are all communicated with the water vapor source bottle.

Preferably, a cooling liquid channel is formed on the side wall of the trimethylaluminum source bottle. The cooling liquid channel can be filled with cooling liquid to cool the trimethylaluminum steam in the trimethylaluminum source bottle so as to reduce the saturated vapor pressure of the trimethylaluminum in the carrier gas and further reduce the content of the trimethylaluminum in the carrier gas.

Preferably, the semiconductor device 1 further comprises a dry pump (not shown in the drawings), and the process chamber 20 is provided with an exhaust pipe (a pipe in which the secondary control valve MV7 is located in fig. 1 and 2), one end of the exhaust pipe is communicated with the process chamber 20, and the other end of the exhaust pipe is connected to the dry pump.

Preferably, as shown in fig. 1 and 2, each gas supply unit of the gas supply line 10 is provided with an exhaust duct (a duct in which the primary control valve PV4 and the primary control valve PV13 are located in fig. 1 and 2), one end of which communicates with the carrier gas pipe (the carrier gas pipe 110 and the carrier gas pipe 210) of the gas supply unit in which the exhaust duct is located, and the other end of which is located outside the process chamber 20.

Preferably, one end of the exhaust pipeline is communicated with a carrier gas pipe of the gas supply unit where the exhaust pipeline is located, and the other end of the exhaust pipeline is connected to the dry pump.

By arranging the exhaust pipe, the exhaust pipeline and the dry pump, the invention can quickly exhaust reaction waste gas from the process chamber after the reaction in the process chamber 20 is finished, quickly exhaust redundant process gas from the carrier gas pipe of each gas supply unit, and exhaust the reaction waste gas and the redundant process gas to the waste gas treatment device by the dry pump. When there is more than one process gas, each process gas may be alternately discharged to the exhaust gas treatment device by the dry pump through the exhaust pipes of the different gas supply units in a very short time.

In order to increase the flow rate of the process gas into the carrier gas tubes 110 through the process gas tubes 120, it is preferable that the process gas tubes 120 of the first gas supply unit 100 extend in a direction perpendicular to the direction in which the carrier gas tubes 110 of the first gas supply unit 100 extend. In the present invention, the extending direction of the process gas tube 120 is set to be perpendicular to the extending direction of the carrier gas tube 110, so that when a carrier gas flows through the carrier gas tube 110, the direction of the pressure gradient inside the carrier gas tube 110 and the process gas tube 120 is the same as the flowing direction of the process gas, thereby increasing the flow rate of the process gas.

The carrier gas pipe 110 and the process gas source in the semiconductor device 1 of the present invention are connected to each other through only one process gas pipe 120. The process gas enters the carrier gas tube 110 through the process gas tube 120 by the pressure difference, is mixed with the carrier gas in the carrier gas tube 110, and is finally transported to the process chamber 20 for the ald reaction. Compared with the scheme that the carrier gas is directly introduced into the process gas source and mixed with the process gas in the prior art, the process gas is less mixed in the carrier gas, so that redundant process gas is not easy to remain in the process chamber after each step of atomic layer deposition reaction, and the problem of film particle doping caused by excessive process gas can be solved.

The atomic layer deposition reaction between trimethylaluminum and water vapor using the semiconductor device 1 of the present invention is divided into five stages:

water vapor input stage: the water vapor passes through a primary control valve PV2, a secondary control valve MV2, a water vapor source bottle, a secondary control valve MV3, a primary control valve PV3 and a primary control valve PV5, then passes through the spray head 22, enters the process chamber 20 and is adsorbed on the surface of the substrate;

and (3) water vapor removing stage: the carrier gas which enters the carrier gas pipe 210 through the primary control valve PV3 and carries water vapor directly enters the dry pump through the primary control valve PV4 and the secondary control valve MV4, and the carrier gas in the dilution gas pipe 230 passes through the primary control valve PV6 and then purges the primary control valve PV5 from the rear part of the primary control valve PV5 to a section of pipeline of the chamber, so that the water vapor in the pipeline is removed completely;

and (3) a trimethyl aluminum input stage: the secondary control valve MV5 and the primary control valve PV11 are opened, trimethylaluminum steam automatically enters the carrier gas pipe 110 from a trimethylaluminum source bottle under the action of pressure difference at two ends of the process gas pipe 120, passes through the primary control valve PV12, is mixed with carrier gas in the dilution gas pipes 130 and 140, then enters the process chamber 20 through the spray head 22, and reacts with H2O adsorbed on the surface of the substrate to generate aluminum oxide;

a reaction cavity purging stage: closing the primary control valve PV11, the trimethylaluminum vapor in the carrier gas tube 110 is completely entrained into the chamber by the carrier gas flowing out of the dilution gas tubes 130 and 140;

and (3) a trimethyl aluminum removing stage: and closing the primary control valve PV8 and the primary control valve PV12, opening the primary control valve PV9 and the primary control valve PV13, purging the carrier gas pipe 110 by the carrier gas introduced from the inlet end of the carrier gas pipe 110 and the carrier gas entering the carrier gas pipe 110 through the purging pipe 150, purging the trimethyl aluminum steam remained between the primary control valve PV11 and the primary control valve PV13 to the dry pump, and simultaneously, allowing the gas in the dilution gas pipe 140 to enter the process chamber 20 through the spray head 22 to purge the process chamber, thereby removing the trimethyl aluminum steam remained in the pipeline.

It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.