阅读说明：本技术 复合材料及应用其的半导体容器 (Composite material and semiconductor container using same ) 是由 江俊彦 邱铭乾 于 2020-01-20 设计创作，主要内容包括：本发明提供一种复合材料及应用其的半导体容器,所述复合材料包含添加石墨烯材料的环烯烃共聚物、添加石墨烯材料的环状嵌段共聚高分子或添加石墨烯材料的环烯烃聚合物,其中石墨烯材料所占的重量百分比为1.8％～8.0％。(The invention provides a composite material and a semiconductor container using the same, wherein the composite material comprises a cycloolefin copolymer added with a graphene material, a cyclic block copolymer added with the graphene material or a cycloolefin polymer added with the graphene material, and the graphene material accounts for 1.8-8.0 wt%.)

1. A semiconductor container made of composite materials is prepared from a cycloolefin composition, and is characterized in that the cycloolefin composition comprises a cycloolefin copolymer added with a graphene material or a cycloolefin polymer added with the graphene material, and the graphene material accounts for 1.8-8.0% by weight;

the graphene material is graphene nanoplatelets, graphene oxide or a combination thereof.

2. The composite semiconductor container of claim 1, wherein the composite semiconductor container is a reticle carrier or a substrate carrier.

3. The composite semiconductor container of claim 2 wherein said reticle carrier is an extreme ultraviolet reticle pod.

4. The composite semiconductor container according to claim 1, wherein the composite semiconductor container has a specific gravity in the range of 1 to 1.2.

5. The composite semiconductor container according to claim 1, wherein the composite semiconductor container has a water content in a range of 0.0001% to 0.01%.

6. The composite semiconductor container according to claim 1, wherein the composite semiconductor container has a shrinkage in the range of 0.1% to 0.5%.

7. The composite semiconductor container according to claim 1, wherein said composite semiconductor container has an impact strength in the range of 30 joules/meter to 50 joules/meter.

8. The composite semiconductor container according to claim 1, wherein the surface resistance of the composite semiconductor container falls within 10 when the graphene material is present in an amount of 1.8 to 3.6% by weight⁵～10⁹Ohm/unit area.

9. The composite semiconductor container according to claim 1, wherein when the graphene material is present in an amount of 3.6 to 8.0 wt%, the composite semiconductor container has a surface resistance of less than 10⁴Ohm/unit area.

10. The composite semiconductor container according to claim 1, wherein the composite semiconductor container is made of a cyclic block copolymer to which a graphene material is added.

11. A composite material is characterized by comprising a cycloolefin copolymer added with a graphene material or a cycloolefin polymer added with the graphene material, wherein the graphene material accounts for 1.8-8.0% by weight;

wherein the graphene material is graphene nanoplatelets, graphene oxide or a combination thereof.

12. The composite material of claim 11, wherein the composite material is made of a cyclic block copolymer to which a graphene material is added.

13. The composite material of claim 11, wherein the surface resistance of the composite material falls within 10 when the graphene material is present in an amount of 1.8 to 3.6% by weight⁵～10⁹Ohm/unit area.

14. The composite material of claim 11, wherein the surface resistance of the composite material is less than 10 when the graphene material is present in an amount of 3.6 to 8.0 wt%⁴Ohm/unit area.

Technical Field

The invention relates to a material composition and application thereof, in particular to a composite material added with a graphene material and a semiconductor container using the composite material.

Background

In the semiconductor industry, containers commonly used for transportation include two major types, namely, a transport box and a storage box, and the main materials of the conventional semiconductor containers include Polypropylene (PP), Polycarbonate (PC), liquid Crystal Polymer (L liquid Crystal Polymer, L CP), and the like.

The early conveying box is mostly made of polypropylene, but the early conveying box is less used due to low manufacturing yield; the polycarbonate is used as the main material, but because the water absorption rate of the material is more than 0.25%, the low-humidity maintaining time is short, and the requirement for maintaining dryness is higher in comparison with the processing process, the manufacturing cost is increased, and the polycarbonate is less used. As for the liquid crystal polymer as the host material, it is considered that it has the advantages of high hardness, high heat distortion temperature, high yield and long humidity maintaining time. There are still other problems such as high material cost, weak strength in the direction perpendicular to the fluid flow and easy breakage.

Therefore, in the face of stringent process standards and cost considerations in the semiconductor industry, the choice of host material is critical without changing the structure of the container body. The present invention is to achieve the requirements of light weight, high dimensional stability, impact resistance, long humidity maintaining time, low harmful gas release and low organic gas volatilization by improving the material.

In the following development and application, for example, the invention disclosed in taiwan patent No. TWI560798, a technique of using a cyclic olefin composition to add Carbon Nanotubes (CNTs) to adjust a semiconductor container to an antistatic (Anti-static) grade is proposed. However, Carbon Nanotubes (CNTs) are expensive Carbon materials, and the addition of CNTs contributes to improvement of various characteristics thereof, but greatly increases the cost of semiconductor containers. In addition, the use of an excessive amount of Carbon Nanotubes (CNTs) in a semiconductor container may also cause environmental pollution.

Disclosure of Invention

In view of the problems of commercial difficulty and environmental pollution caused by the greatly increased manufacturing cost in the prior art, the present invention provides a composite material, which can greatly reduce the problems of use and pollution of carbon nanotubes, and can simultaneously achieve the technology of arbitrarily adjusting the characteristics of the composite material such as conductivity (Conductive), electrostatic dissipation (ESD), or Anti-Static.

As described above, the present invention discloses a composite material, which comprises a cycloolefin compound or a Cyclic Block Copolymer (CBC), and further comprises a graphene material, wherein the graphene material accounts for 1.8 wt% to 8.0 wt%. Wherein the Cycloolefin compound can be a Cycloolefin copolymer (COC) or a Cycloolefin polymer (COP); the Graphene material may be Graphene nanoplatelets (Graphene nanoplatelets), Graphene oxide (Graphene oxide), or a combination thereof.

Cyclic olefins are produced by Ring-opening metathesis (ROMP), a thermosetting copolymer formed by reaction injection molding, and a thermoplastic copolymer whose molecular weight is controlled by a hydrogenation step, i.e., a Cyclic Olefin Copolymer (COC). Another type is polymerization in the presence of a catalyst, which maintains a bicyclic structure in the main chain, namely a Cyclic Olefin Polymer (COP).

As for the Cyclic Block Copolymer (CBC), it is a polymer having high transparency, cleanness and chemical resistance. The present invention further comprises a cycloolefin compound and a Cyclic Block Copolymer (CBC) added with 1.8 to 8.0 wt% of a graphene material.

The composite material semiconductor container of the invention is made of the cycloolefin composition, so that the composite material semiconductor container has the characteristics of light weight, high dimensional stability, impact resistance, long humidity maintaining time, low harmful gas release, high yield and the like.

The foregoing summary of the invention is provided to introduce a basic description of various aspects and features of the present invention. This summary is not an extensive overview of the invention, and is intended to neither identify key or critical elements of the invention nor delineate the scope of the invention, but to present some concepts of the invention in a simplified form.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.

FIG. 1 is a graph comparing the weight percentage of carbon material added in examples of the present invention and comparative examples.

The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

The Cycloolefin composition of the present invention refers to a composition formed by using Cycloolefin compounds, such as Cyclic Olefin Copolymer (COC) or Cyclic Olefin Polymer (COP), or optionally Cyclic Block Copolymer (CBC) as a host material and adding 1.8 wt% to 8.0 wt% of graphene material, and a composite semiconductor container made of the material composition. The composite semiconductor container may be a mask carrier or a substrate carrier, and the Graphene material may be Graphene nanoplatelets (Graphene nanoplatelets), Graphene oxide (Graphene oxide), or a combination thereof.

The mask carrier may be a mask Pod (Reticle Pod). The Reticle Pod (Reticle Pod) comprises a Reticle storage Pod, a Reticle Pod (including a Standard Mechanical Interface (SMIF) Reticle Pod), or an Extreme Ultraviolet (EUV) Reticle Pod; the Substrate carrier may be a Front Opening Unified Pod (FOUP), a pod, or any other transport or storage container for carrying substrates (substrates) used in semiconductor manufacturing, but the invention is not limited thereto.

The Substrate (Substrate) used in the semiconductor process may be a silicon Substrate, a glass Substrate, a ceramic Substrate, a flexible plastic Substrate, a sapphire Substrate, or the like. And the silicon substrate may be a wafer.

A Cyclic Olefin Copolymer (COC), a Cyclic Olefin Polymer (COP), and a Cyclic Block Copolymer (CBC) may be used in practical examples, in which the Cyclic Olefin Polymer (COP) is used as a representative test. It will be disclosed how to adjust the weight percentage of the added graphene material to make the Surface resistance (Surface resistance) less than 10⁴Ohm/unit area (Ω/sq.), 10⁵～10⁹Ohm/unit area (omega/sq.) or 10⁹～10¹²Ohm/unit area (Ω/sq.) in order to achieve the composite efficacy of Conductive (Conductive), electrostatic Dissipative (ESD), or antistatic (Anti-Static) grades.

Wherein, when the Surface resistance (Surface resistance) of the composite material is less than 10⁴Ohm/sq, the composite material can generate Conductive (Conductive) property, so as to obtain the effect of semiconductor package electromagnetic interference Shielding (EMI Shielding). When the Surface resistance (Surface resistance) of the composite material falls to 10⁵～10⁹When ohm/unit area (Ω/sq.), the composite material can generate electrostatic dissipation (ESD) characteristic, so as to achieve the effect of electrostatic Protection (ESD Protection). Finally, when the Surface resistance (Surface resistance) of the composite material is adjusted to 10⁹～10¹²Ohm/unit area (omega/sq.) allows the composite material to have an antistatic (Anti-static) effect.

Accordingly, examples of the graphene material with various weight percentages added to achieve the effect of adjusting the Surface resistance (Surface resistance) of the composite material will be described in the following embodiments.