阅读说明：本技术 一种超薄衬底外延生长装置及制备方法 (Epitaxial growth device and preparation method for ultrathin substrate ) 是由 王新强 杨玉珍 王丕龙 张永利 赵旺 朱建英 于 2021-07-21 设计创作，主要内容包括：本发明属于外延生长装置技术领域,本发明提供了一种超薄衬底外延生长装置及制备方法,包括装置主体,装置主体的呈立方体结构,且左右两侧方分别设置有进气口和出气口,装置主体内壁四周且靠近进气口和出气口处设置有一圈凸缘,凸缘顶部并排设置有两块凹透镜,两块凹透镜将装置主体内部分割为上下两个部分,一种超薄衬底外延生长设备的制备方法,包括以下步骤：步骤一、将晶圆底衬放入支撑拖架内,并使所述支撑拖架旋转；步骤二、通过驱动电动伸缩杆调整调域加热装置照射加热所述晶圆底衬,使得两个所述调域加热装置的照射面积一之和正好覆盖整个所述晶圆底衬表面,从而使得晶圆底衬的受热更加的均匀,使得外延生长厚度更加的均匀。(The invention belongs to the technical field of epitaxial growth devices, and provides an epitaxial growth device for an ultrathin substrate and a preparation method thereof, wherein the epitaxial growth device comprises a device main body, the device main body is of a cubic structure, the left side and the right side of the device main body are respectively provided with an air inlet and an air outlet, a circle of flange is arranged on the periphery of the inner wall of the device main body and close to the air inlet and the air outlet, the top of the flange is provided with two concave lenses side by side, and the inner part of the device main body is divided into an upper part and a lower part by the two concave lenses, so that the preparation method of the epitaxial growth device for the ultrathin substrate comprises the following steps: step one, a wafer bottom lining is placed into a supporting bracket, and the supporting bracket is rotated; and step two, the electric telescopic rod is driven to adjust the domain-adjusting heating devices to irradiate and heat the wafer bottom lining, so that the sum of the irradiation areas of the two domain-adjusting heating devices just covers the whole surface of the wafer bottom lining, the wafer bottom lining is heated more uniformly, and the epitaxial growth thickness is more uniform.)

1. The utility model provides an ultra-thin substrate epitaxial growth device, includes the device main part, the device main part be the cube structure, and the left and right sides side is provided with air inlet and gas outlet respectively, its characterized in that: a circle of flanges are arranged on the periphery of the inner wall of the device main body and close to the air inlet and the air outlet, two concave lenses are arranged on the top of the flanges side by side, the inside of the device main body is divided into an upper part and a lower part by the two concave lenses, the bottom of the inner wall of the device main body is rotatably connected with a rotating support rod, a supporting bracket is arranged at the bottom of the rotating support rod, a wafer bottom lining is arranged in the center of the top of the supporting bracket, region adjusting heating devices are arranged at the top of the inner wall of the device main body and at positions corresponding to the concave lenses and used for adjusting the range of irradiating and heating the surface of the wafer bottom lining, an electric telescopic rod and a pyrometer are arranged at the top of the device main body, the end part of a telescopic shaft of the electric telescopic rod penetrates through the top of the inner wall of the device main body and is fixedly connected with a connecting bracket, and the left side and the right side of the connecting bracket are respectively connected with the two region adjusting heating devices, the electric telescopic rod is used for applying power of the region-adjusting heating device, and the pyrometer is used for detecting the surface temperature of the wafer bottom lining.

2. An ultra-thin substrate epitaxial growth apparatus according to claim 1, wherein: the region-adjusting heating device comprises a mounting box and a sliding cover, the top of the mounting box is fixedly connected with the top of the inner wall of the device main body, a row of electric heating lamps I are arranged on the top of the inner wall of the mounting box along the horizontal direction, the mounting box is connected inside the sliding cover in a sliding mode, a projection hole is formed in the bottom of the sliding cover, and the connecting support is fixedly connected between the sliding covers.

3. An ultra-thin substrate epitaxial growth apparatus according to claim 2, wherein: wafer end liner top and two the space that concave lens bottom constitutes is gaseous reaction zone, gaseous reaction zone be used for holding reaction gas with wafer end liner surface takes place to react and provides the space, gaseous reaction zone with the air inlet with the gas outlet phase-match, the top four sides in gaseous reaction zone all set up to the inclined plane of the top slope of device main part, the surface on this inclined plane is provided with the reflecting plate, device main part inner wall bottom just is close to support the bracket and locate to be provided with round electric heating lamp two, the round electric heating lamp two be located the below position department of reflecting plate.

4. An ultra-thin substrate epitaxial growth apparatus according to claim 3, wherein: one side at device main part top is provided with the controller, the controller is the PLC controller, pyrometer, electric heating lamp one, electric heating lamp two and electric telescopic handle pass through the electric wire with controller electric connection.

5. An ultra-thin substrate epitaxial growth apparatus according to claim 2, wherein: the left and right sides of mounting box is impartial apart from being provided with the guide block, the inner wall left and right sides equidistance of sliding closure is provided with the guide way, guide block sliding connection in inside the guide way.

6. An ultra-thin substrate epitaxial growth apparatus according to claim 3, wherein: the reflecting plate is of an annular structure, and the inclination angle is an angle required for reflecting light rays emitted by the second electric heating lamp to the area outside the wafer bottom lining to heat up.

7. An ultra-thin substrate epitaxial growth apparatus according to claim 2, wherein: the top of the mounting box is uniformly provided with heat dissipation holes, the top of the device body is provided with heat dissipation grooves corresponding to the heat dissipation holes, and the heat dissipation holes are communicated with the heat dissipation grooves.

8. An ultra-thin substrate epitaxial growth apparatus according to claim 3, wherein: the reaction gas passes through the gas inlet, passes through the gas reaction zone and is discharged from the gas outlet, and the flow velocity of the reaction gas flows at a constant speed.

9. An ultra-thin substrate epitaxial growth apparatus according to claim 2, wherein: and the first row of electric heating lamps are arranged in an arc shape, and the radian of the first row of electric heating lamps is matched with that of the wafer bottom lining.

10. A method for manufacturing an ultra-thin substrate epitaxial growth apparatus comprising the ultra-thin substrate epitaxial growth apparatus of any one of claims 1 to 9, comprising the steps of:

firstly, putting a wafer bottom lining into a support bracket, and rotating the support bracket;

adjusting the domain-adjusting heating devices by driving the electric telescopic rods to irradiate and heat the wafer bottom lining, enabling the sum of the irradiation areas of the two domain-adjusting heating devices to just cover the whole surface of the wafer bottom lining, introducing reaction gas through the gas inlet, and reacting with the surface of the wafer bottom lining in the gas reaction area to grow epitaxy;

and thirdly, monitoring the temperature of each area on the surface of the wafer bottom lining in real time through a pyrometer, sending an instruction to a controller when the central temperature of the wafer bottom lining is higher than the temperature of other areas, controlling the electric telescopic rod by the controller to adjust the heating range of the domain adjusting heating device to an irradiation area II, so that the irradiation area I of a heating area of the domain adjusting heating device is reduced to an irradiation area II, the center of the wafer bottom lining is stopped from heating to realize cooling, meanwhile, starting an electric heating lamp II through the controller, heating the areas on the outer side of the periphery of the wafer bottom lining through a reflecting plate through the electric heating lamp II, and alternately matching the domain adjusting heating device and the electric heating lamp II to uniformly heat the surface of the wafer bottom lining.

Technical Field

The invention belongs to the technical field of epitaxial growth devices, and particularly relates to an epitaxial growth device and a preparation method of an ultrathin substrate.

Background

An epitaxial growth apparatus is widely used as an apparatus for forming a single crystal layer (epitaxial layer) on a surface of, for example, a silicon wafer. In a single wafer type epitaxial growth apparatus, heating is performed to obtain a predetermined temperature while introducing a source gas into a reaction chamber in which a wafer is horizontally placed, thereby growing an epitaxial layer.

The wafer needs to be heated at high temperatures ranging from 1000 to 2000 degrees celsius. A halogen lamp may be used as the heating source.

Since the speed and thickness of epitaxial growth are closely related to the surface temperature of the wafer, and the temperature of the central region of the wafer is higher than that of the outer region due to the superposition effect of electromagnetic waves when the halogen lamp irradiates, the epitaxial growth thickness of the central region of the wafer is higher than that of the outer region, so that the quality of the wafer and the implementation of the subsequent processing technology of chip manufacturing are affected.

Disclosure of Invention

The invention is realized by the following steps:

on one hand, the invention provides an ultra-thin substrate epitaxial growth device, which comprises a device main body, wherein the device main body is in a cubic structure, the left side and the right side of the device main body are respectively provided with an air inlet and an air outlet, a circle of flange is arranged on the periphery of the inner wall of the device main body and close to the air inlet and the air outlet, the top of the flange is provided with two concave lenses side by side, the inside of the device main body is divided into an upper part and a lower part by the two concave lenses, the bottom of the inner wall of the device main body is rotatably connected with a rotating support rod, the bottom of the rotating support rod is provided with a support bracket, the center of the top of the support bracket is provided with a wafer bottom lining, the top of the inner wall of the device main body and the position corresponding to the concave lenses are both provided with a region-adjusting heating device, and the region-adjusting heating device is used for adjusting the range of irradiating and heating the surface of the wafer bottom lining, the top of device main part is provided with electric telescopic handle and pyrometer, electric telescopic handle's telescopic shaft tip passes device main part inner wall top fixedly connected with linking bridge, the left and right sides of linking bridge respectively with two it connects to transfer territory heating device, electric telescopic handle is used for applying transfer territory heating device's power, the pyrometer is used for detecting wafer end liner surface temperature.

Furthermore, the region-adjusting heating device comprises a mounting box and a sliding cover, the top of the mounting box is fixedly connected with the top of the inner wall of the device main body, a row of electric heating lamps I are arranged on the top of the inner wall of the mounting box along the horizontal direction, the mounting box is connected inside the sliding cover in a sliding mode, a projection hole is formed in the bottom of the sliding cover, and the connecting support is fixedly connected between the sliding covers.

Further, the wafer end liner top and two the space that concave lens bottom constitutes is gaseous reaction zone, gaseous reaction zone be used for holding reaction gas with wafer end liner surface takes place to react and provides the space, gaseous reaction zone with the air inlet with the gas outlet phase-match, the top four sides in gaseous reaction zone all set up to the inclined plane of the top slope of device main part, the surface on this inclined plane is provided with the reflecting plate, device main part inner wall bottom just is close to support the bracket around be provided with round electric heating lamp two, the round electric heating lamp two be located the below position department of reflecting plate.

Further, one side at device main part top is provided with the controller, the controller is the PLC controller, pyrometer, electric heat lamp one, electric heat lamp two and electric telescopic handle pass through the electric wire with controller electric connection.

Further, the equal distance in the left and right sides of mounting box is provided with the guide block, the equidistance in the inner wall left and right sides of slip cap is provided with the guide way, guide block sliding connection in inside the guide way.

Furthermore, the reflecting plate is of an annular structure, and the inclination angle is an angle required for reflecting light rays emitted by the second electric heating lamp to the area outside the wafer bottom lining for heating.

Furthermore, heat dissipation holes are evenly formed in the top of the mounting box, heat dissipation grooves are formed in the top of the device body and correspond to the heat dissipation holes, and the heat dissipation holes are communicated with the heat dissipation grooves.

Further, the reaction gas passes through the gas inlet, passes through the gas reaction zone and is discharged from the gas outlet, and the flow velocity of the reaction gas flows at a constant speed.

Furthermore, the first row of electric heating lamps are arranged in an arc shape, and the radian of the first row of electric heating lamps is matched with that of the wafer bottom lining.

On the other hand, the preparation method of the ultrathin substrate epitaxial growth equipment comprises the following steps:

firstly, putting a wafer bottom lining into a support bracket, and rotating the support bracket;

adjusting the domain-adjusting heating devices by driving the electric telescopic rods to irradiate and heat the wafer bottom lining, enabling the sum of the irradiation areas of the two domain-adjusting heating devices to just cover the whole surface of the wafer bottom lining, introducing reaction gas through the gas inlet, and reacting with the surface of the wafer bottom lining in the gas reaction area to grow epitaxy;

and thirdly, monitoring the temperature of each area on the surface of the wafer bottom lining in real time through a pyrometer, sending an instruction to a controller when the central temperature of the wafer bottom lining is higher than the temperature of other areas, controlling the electric telescopic rod by the controller to adjust the heating range of the domain adjusting heating device to an irradiation area II, so that the irradiation area I of a heating area of the domain adjusting heating device is reduced to an irradiation area II, the center of the wafer bottom lining is stopped from heating to realize cooling, meanwhile, starting the electric heating lamp II through the controller, heating the areas on the outer side of the periphery of the wafer bottom lining through the electric heating lamp II through a reflecting plate, and alternately matching the domain adjusting heating device and the electric heating lamp II to uniformly heat the surface of the wafer bottom lining.

The invention has the beneficial effects that:

the invention reduces the problem that the temperature of the central area of the wafer bottom lining is higher than that of other areas due to the superposition effect of electromagnetic waves of the electric heating lamp I as much as possible by arranging the concave lens at the bottom of the region-adjusting heating device and converting the point light source of the electric heating lamp I into an approximately parallel light source through the concave lens, thereby enabling the wafer bottom lining to be heated more uniformly and the epitaxial growth thickness to be more uniform, and adjusts the size of the irradiation area of the electric heating lamp I on the surface of the wafer bottom lining by adjusting the distance between the electric heating lamp I and the projection hole, thereby enabling the temperature of the central area of the wafer bottom lining to be overhigh, reducing the irradiation time of the wafer bottom lining, slowly reducing the temperature of the center, simultaneously supplementing and heating the peripheral areas of the wafer bottom lining through the electric heating lamp I to maintain the temperature, and enabling the overall temperature of the wafer to tend to be uniform, the uniformity of the epitaxial growth is improved, and the quality and the yield of the chip at the position of the product are improved.

The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.

FIG. 1 is a schematic structural diagram of an epitaxial growth apparatus according to the present invention in a front view, in cross section, under a uniform temperature condition;

FIG. 2 is a schematic view of an epitaxial growth structure with an elevated temperature at the center of a wafer substrate according to the present invention;

FIG. 3 is a schematic front sectional view of the field adjusting heating apparatus of the present invention;

FIG. 4 is a schematic view of an irradiation area of the field adjusting heating apparatus disclosed in the present invention;

FIG. 5 is a flow chart of a preparation method disclosed by the present invention.

Description of reference numerals: 1. rotating the stay bar; 2. a support bracket; 3. a wafer substrate; 4. a device main body; 401. a flange; 402. a heat sink; 403. a gas reaction zone; 5. a second electric heating lamp; 6. an air inlet; 7. a reflective plate; 8. a concave lens; 9. a domain-adjusting heating device; 901. mounting a box; 902. a guide block; 903. a guide groove; 904. a sliding cover; 905. a projection hole; 906. heat dissipation holes; 907. a first electric heating lamp; 10. a controller; 11. an electric telescopic rod; 12. connecting a bracket; 13. a pyrometer; 14. an air outlet; l1, electromagnetic wave one; l2, electromagnetic wave two; w, a reaction gas; s1, irradiating the area I; and S2, irradiating the area II.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings of the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.

Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

Example one

Referring to fig. 1-4, the present invention provides an ultra-thin substrate epitaxial growth apparatus, including an apparatus main body 4, the apparatus main body 4 is a cubic structure, and the left and right sides of the apparatus main body 4 are respectively provided with an air inlet 6 and an air outlet 14, a circle of flange 401 is provided around the inner wall of the apparatus main body 4 and near the air inlet 6 and the air outlet 14, the top of the flange 401 is provided with two concave lenses 8 side by side, the inner part of the apparatus main body 4 is divided into an upper part and a lower part by the two concave lenses 8, the bottom of the inner wall of the apparatus main body 4 is rotatably connected with a rotating stay bar 1, the bottom of the rotating stay bar 1 is provided with a supporting bracket 2, the center of the top of the supporting bracket 2 is provided with a wafer bottom liner 3, the top of the inner wall of the apparatus main body 4 and the position corresponding to the concave lenses 8 are both provided with a region-adjusting heating device 9, the region-adjusting heating device 9 is used for adjusting the range of irradiating and heating the surface of the wafer bottom liner 3, the top of device main part 4 is provided with electric telescopic handle 11 and pyrometer 13, and electric telescopic handle 11's telescopic shaft tip passes device main part 4 inner wall top fixedly connected with linking bridge 12, and the left and right sides of linking bridge 12 is connected with two accent territory heating device 9 respectively, and electric telescopic handle 11 is used for applying the power of transferring territory heating device 9, and pyrometer 13 is used for detecting 3 surface temperature in wafer end liner.

The region-adjusting heating device 9 comprises a mounting box 901 and a sliding cover 904, the top of the mounting box 901 is fixedly connected with the top of the inner wall of the device body 4, a row of electric heating lamps 907 is arranged on the top of the inner wall of the mounting box 901 along the horizontal direction, the mounting box 901 is slidably connected inside the sliding cover 904, a projection hole 905 is formed in the bottom of the sliding cover 904, and a connecting support 12 is fixedly connected between the two sliding covers 904.

The space formed by the top of the wafer substrate 3 and the bottoms of the two concave lenses 8 is a gas reaction area 403, the gas reaction area 403 is used for accommodating reaction gas W to react with the surface of the wafer substrate 3 to provide a space, the gas reaction area 403 is matched with the gas inlet 6 and the gas outlet 14, four sides of the top of the gas reaction area 403 are all provided with inclined planes inclined towards the top of the device body 4, the surface of each inclined plane is provided with a reflecting plate 7, a circle of two electric heating lamps 5 are arranged at the bottom of the inner wall of the device body 4 and close to the periphery of the supporting bracket 2, and the circle of two electric heating lamps 5 are positioned below the reflecting plate 7.

Specifically, as shown in fig. 1 and 2, in the apparatus, the wafer substrate 3 is placed on the top of the support bracket 2, the projection, i.e., the irradiation area, of the battery wave irradiated by the electric heating lamp 907 arranged inside the domain-adjusting heating device 9 passes through the projection hole 905 to heat the surface of the wafer substrate 3, the projection hole 905 can be processed into various shapes as required, in this embodiment, a semicircular hole with the same radian as the wafer substrate 3 is used for projection, so that the irradiation area S1 is obtained, and the two domain-adjusting heating devices 9 project together, so that the two semicircular irradiation areas S1 are spliced into a complete circle to completely cover the surface of the wafer substrate 3 for heating.

Meanwhile, a concave lens 8 is arranged at the bottom of a projection hole 905 of the domain adjusting heating device 9, the point light source of the electric heating lamp I907 is refracted to be an approximately parallel light source through the concave lens 8, the phenomenon that the local temperature of a certain area of the wafer substrate 3 is too high due to overlapping heating of electromagnetic waves of the two electric heating lamp I907 light sources is reduced through the arrangement, the epitaxial growth thickness is uneven is avoided, the heating mode is the irradiation and refraction path of the electromagnetic wave I L1 shown in figure 1, the obtained irradiation area is a left semicircular irradiation area S1 shown in figure 4, the arrangement can uniformly heat the top of the wafer substrate 3 integrally, and the phenomenon that the central temperature is too high is reduced.

Since the concave lens 8 is used to generate only approximately parallel light source, so that the unavoidable overlapping heating effect of light is generated, the pyrometer 13 is arranged to detect the surface temperature of the wafer substrate 3 in the reaction process, when the central temperature of the wafer substrate 3 is higher than the temperature of the surrounding area, the pyrometer 13 sends a signal to the controller 10, the controller 10 controls the electric telescopic rod 11 to drive the connecting bracket 12 to move downwards, so as to drive the sliding covers 904 on the left side and the right side to move downwards, so as to pull the distance between the electric heating lamp 907 and the projection hole 905, so that the illumination area projected by the electric heating lamp 907 through the projection hole 905 is reduced, as shown in a reduced illumination path of the electromagnetic wave I1 in fig. 2, and the illumination area II S2 in fig. 4 is a reduced illumination range, so that the backward illumination areas II S2 are separated from each other, the central area and the peripheral area of the wafer bottom lining 3 are simultaneously deprived of heating sources, so that the central area is cooled, meanwhile, in order to supplement the heat sources around the wafer bottom lining 3, the controller 10 controls the electric heating lamp II 5 at the bottom of the support bracket 2 to light up, the electric heating lamp II 5 irradiates the reflecting plate 7 which is obliquely arranged, the electromagnetic wave II L2 is radiated to the peripheral area outside the wafer bottom lining 3 through the reflecting plate 7 to be heated, and the temperature around the wafer bottom lining 3 is ensured not to drop, as shown in figures 2 and 4, so that the central area of the wafer bottom lining 3 which is excessively high in temperature is effectively adjusted to be cooled, the temperature of the whole wafer bottom lining 3 is balanced, and the uniformity of epitaxial growth thickness is improved.

One side at the top of device main part 4 is provided with controller 10, and controller 10 is PLC controller 10, and pyrometer 13, electric heating lamp 907, electric heating lamp two 5 and electric telescopic handle 11 pass through electric wire and controller 10 electric connection.

Guide blocks 902 are arranged on the left side and the right side of the mounting box 901 at equal distances, guide grooves 903 are arranged on the left side and the right side of the inner wall of the sliding cover 904 at equal distances, and the guide blocks 902 are slidably connected inside the guide grooves 903.

The reflecting plate 7 is of an annular structure, the inclination angle is an angle required by heating up the area outside the wafer bottom lining 3 through reflecting light rays emitted by the electric heating lamps II 5, the reflecting plate 7 is arranged according to an angle obtained by calculation and a light refraction rule, a heat source can be effectively provided for the area outside the wafer bottom lining 3, and the heat energy in the area outside the wafer bottom lining 3 is not lost due to the fact that the temperature of the central area of the wafer bottom lining 3 is reduced.

Heat dissipation holes 906 are uniformly formed in the top of the mounting box 901, heat dissipation grooves 402 are formed in the top of the device body 4 corresponding to the heat dissipation holes 906, and the heat dissipation holes 906 are communicated with the heat dissipation grooves 402.

The reaction gas W passes through the gas inlet 6, passes through the gas reaction zone 403, and is then discharged from the gas outlet 14, with the flow velocity of the reaction gas W being constant.

A row of electric heating lamps 907 is arranged in an arc shape, and the radian of the electric heating lamps is matched with that of the wafer bottom lining 3.

Example two:

referring to fig. 5, a method for manufacturing an ultra-thin substrate epitaxial growth apparatus includes the following steps:

firstly, a wafer bottom liner 3 is placed in a supporting bracket 2, and the supporting bracket 2 is rotated;

step two, the electric telescopic rod 11 is driven to adjust the domain-adjusting heating devices 9 to irradiate and heat the wafer substrate 3, so that the sum of the irradiation areas S1 of the two domain-adjusting heating devices 9 just covers the whole surface of the wafer substrate 3, reaction gas W is introduced through the gas inlet 6 and reacts with the surface of the wafer substrate 3 in the gas reaction area 403 to grow epitaxy;

thirdly, monitoring the temperature of each area on the surface of the wafer bottom lining 3 in real time through a pyrometer 13, sending a command to a controller 10 when the temperature of the center of the wafer bottom lining 3 is higher than the temperature of other areas, controlling an electric telescopic rod 11 by the controller 10 to adjust the heating range of a domain adjusting heating device 9 to be an irradiation area II S2, so that the heating area of the domain adjusting heating device 9 is reduced from an irradiation area I S1 to an irradiation area II S2, the center of the wafer bottom lining 3 is stopped from being heated to be cooled, meanwhile, starting an electric heating lamp II 5 through the controller 10, heating the areas on the outer sides of the periphery of the wafer bottom lining 3 through a reflecting plate 7 through the electric heating lamp II 5, and alternately matching the domain adjusting heating device 9 and the electric heating lamp II 5 to enable the surface of the wafer bottom lining 3 to be uniformly heated.

It should be noted that the specific model specifications of the pyrometer 13, the electric telescopic rod 11, the controller 10, the first electric heating lamp 907 and the second electric heating lamp 5 need to be determined by type selection according to the actual specification of the device, and the specific type selection calculation method adopts the prior art in the field, so detailed description is omitted.

It should be noted that the power supply and the principle of the pyrometer 13, the electric telescopic rod 11, the controller 10, the first electric heating lamp 907 and the second electric heating lamp 5 are clear to those skilled in the art and will not be described in detail herein.

It should be understood that the specific order or hierarchy of steps in the processes disclosed is an example of exemplary approaches. Based upon design preferences, it is understood that the specific order or hierarchy of steps in the processes may be rearranged without departing from the scope of the present disclosure. The accompanying method claims present elements of the various steps in a sample order, and are not intended to be limited to the specific order or hierarchy presented.

In the foregoing detailed description, various features are grouped together in a single embodiment for the purpose of streamlining the disclosure. This method of disclosure is not to be interpreted as reflecting an intention that the claimed embodiments of the subject matter require more features than are expressly recited in each claim. Rather, as the following claims reflect, invention lies in less than all features of a single disclosed embodiment. Thus, the following claims are hereby expressly incorporated into the detailed description, with each claim standing on its own as a separate preferred embodiment of the invention.

Those of skill would further appreciate that the various illustrative logical blocks, modules, circuits, and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both. To clearly illustrate this interchangeability of hardware and software, various illustrative components, blocks, modules, circuits, and steps have been described above generally in terms of their functionality. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the overall system. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present disclosure.

What has been described above includes examples of one or more embodiments. It is, of course, not possible to describe every conceivable combination of components or methodologies for purposes of describing the aforementioned embodiments, but one of ordinary skill in the art may recognize that many further combinations and permutations of various embodiments are possible. Accordingly, the embodiments described herein are intended to embrace all such alterations, modifications and variations that fall within the scope of the appended claims. Furthermore, to the extent that the term "includes" is used in either the detailed description or the claims, such term is intended to be inclusive in a manner similar to the term "comprising" as "comprising" is interpreted when employed as a transitional word in a claim. Furthermore, any use of the term "or" in the specification of the claims is intended to mean "non-exclusive or".