阅读说明：本技术 具有电容单元且具有与电容单元耦合的电阻结构的集成组合件 (Integrated assembly with capacitive cells and with resistive structures coupled with the capacitive cells ) 是由 杉本智 保坂広樹 大石隼人 于 2019-11-08 设计创作，主要内容包括：本申请案涉及具有电容单元且具有与所述电容单元耦合的电阻结构的集成组合件。一些实施例包含一种集成组合件,所述集成组合件具有包含多个电容子单元的电容单元。第一导电结构位于所述电容子单元的第一群组下方且与其耦合。第二导电结构位于所述电容子单元的第二群组下方且与其耦合。第三导电结构位于所述电容子单元上方且与所有所述电容子单元耦合。电阻结构在所述第一及第二导电结构下方延伸。所述电阻结构具有位于所述第一导电结构下方且与所述第一导电结构耦合的第一端区域。所述电阻结构包含从所述第一端区域延伸到第二端区域的电阻线。(The application relates to an integrated assembly having a capacitive cell and having a resistive structure coupled with the capacitive cell. Some embodiments include an integrated assembly having a capacitive unit including a plurality of capacitive sub-units. A first conductive structure is located under and coupled to the first group of capacitive sub-units. A second conductive structure is located under and coupled to the second group of capacitive subunits. A third conductive structure is located over the capacitive sub-units and is coupled to all of the capacitive sub-units. A resistive structure extends under the first and second conductive structures. The resistive structure has a first end region located below and coupled with the first conductive structure. The resistive structure includes a resistive wire extending from the first end region to a second end region.)

1. An integrated assembly, comprising:

a capacitive unit comprising a plurality of capacitive subunits arranged in proximity to each other, the capacitive subunits comprising respective first electrodes coupled to each other and respective second electrodes coupled to each other;

a resistive structure comprising at least one resistive line; and is

Wherein the capacitive unit and the resistive structure are vertically disposed such that the at least one resistance line and the plurality of capacitive sub-units vertically overlap each other.

2. The integrated assembly of claim 1, wherein:

the first electrodes of the plurality of capacitive subunits are coupled to a conductive structure and the second electrodes of the plurality of capacitive subunits are coupled to a conductive plate; and is

The at least one resistance line further vertically overlaps the conductive structure and the conductive plate.

3. The integrated assembly of claim 2, wherein:

the conductive plate is supplied with a first voltage; and is

The at least one resistive line includes a first end region coupled with the conductive structure and a second end region supplied with a second voltage.

4. The integrated assembly as set forth in claim 1,

wherein the capacitive unit further includes a plurality of additional capacitive sub-units arranged in proximity to each other, the plurality of additional capacitive sub-units including respective third electrodes coupled to each other and to the respective first electrodes of the plurality of capacitive sub-units, and the plurality of additional capacitive sub-units further including respective fourth electrodes coupled to each other and to the respective second electrodes of the plurality of capacitive sub-units, and

the resistive structure further includes at least one additional resistive line vertically overlapping the plurality of additional capacitive subunits.

5. The integration assembly as set forth in claim 4,

wherein the first electrodes of the plurality of capacitive sub-units and the third electrodes of the plurality of additional capacitive sub-units are coupled to a conductive structure, and the second electrodes of the plurality of capacitive sub-units and the fourth electrodes of the plurality of additional capacitive sub-units are coupled to a conductive plate;

wherein the conductive plate is supplied with a first voltage;

wherein the at least one resistive line includes a first end region and a second end region coupled with the conductive structure;

wherein the at least one additional resistance line includes a third end region and a fourth end region coupled with the conductive structure; and is

Wherein one or both of the second end region of the at least one resistance line and the fourth end region of the at least one additional resistance line are supplied with a second voltage.

6. The integration assembly as set forth in claim 4,

wherein the first electrodes of the plurality of capacitive sub-units and the third electrodes of the plurality of additional capacitive sub-units are coupled to a conductive structure, and the second electrodes of the plurality of capacitive sub-units and the fourth electrodes of the plurality of additional capacitive sub-units are coupled to a conductive plate;

wherein the conductive plate is supplied with a first voltage;

wherein the conductive structure is supplied with a second voltage;

wherein the at least one resistive line includes a first end region and a second end region coupled with the conductive structure;

wherein the at least one additional resistance line includes a third end region and a fourth end region coupled with the conductive structure; and is

Wherein each of the second end region of the at least one resistance line and the fourth end region of the at least one additional resistance line is not supplied with the second voltage.

7. An integrated assembly, comprising:

a capacitive unit comprising a plurality of capacitive subunits; the capacitor subunits are subdivided into a first group and a second group;

a first conductive structure located below and coupled with the first group of the capacitive sub-units;

a second conductive structure located below and coupled with the second group of the capacitive sub-units, the second conductive structure being supplied with a first voltage;

a third conductive structure located above the capacitive sub-unit and coupled with the first and second groups of the capacitive sub-units; and

a resistive structure extending under the first and second conductive structures; the resistive structure has a first end region located below the first conductive structure; the first end region is coupled with the first conductive structure; the resistive structure includes a plurality of resistive wires extending from the first end region to a second end region, one or more of the second end regions being supplied with a second voltage.

8. The integration assembly of claim 7, wherein the first end region comprises a lattice; the lattice includes a first feature extending from the resistance line and extending along a first direction; the lattice includes second features extending between the first features and extending along a second direction that intersects the first direction.

9. The integration assembly of claim 8, wherein a conductive contact extends from each of the first and second features to the first conductive structure.

10. The integrated assembly of claim 7, wherein the resistance lines are all about the same cross-sectional area as one another.

11. The integration assembly of claim 7, wherein at least one of the resistance lines is a different cross-sectional area than at least one other of the resistance lines.

12. The integrated assembly of claim 7, wherein the resistance lines are all about the same width as each other.

13. The integration assembly of claim 7, wherein at least one of the resistance lines is a different width than at least one other of the resistance lines.

14. The integrated assembly of claim 7, wherein the resistance line of the resistance structure comprises polysilicon doped with impurities.

15. An integrated assembly, comprising:

a capacitive unit comprising a plurality of capacitive subunits; the capacitor subunits are subdivided into a first group and a second group;

a first plate located below and coupled with the first group of the capacitive sub-units along a conductive level located below the capacitive sub-units;

a second plate located along the conductive level beneath and coupled with the second group of the capacitive sub-units; the first and second plates being spaced apart from each other along the conductive level, the second plate being supplied with a first voltage;

a common plate extending to couple the first and second groups of the capacitive sub-units to each other; and

a resistive structure extending below the first and second plates; the resistive structure has a wide end region located below the first plate; the wide end region is coupled with the first plate by a plurality of first conductive contacts extending from a bottom of the first plate to the wide end region of the resistive structure; the resistive structure includes a plurality of resistive wires extending from the wide end region to an input voltage contact region.

16. The integrated assembly of claim 15, wherein the resistance lines are all about the same cross-sectional area as one another.

17. The integration assembly of claim 15, wherein at least one of the resistance lines has a different cross-sectional area than at least one other of the resistance lines.

18. The integrated assembly of claim 15, wherein the resistance lines are all about the same width as each other.

19. The integration assembly of claim 15, wherein at least one of the resistance lines is a different width than at least one other of the resistance lines.

20. The integration assembly of claim 15, wherein the wide end region comprises a lattice; the lattice includes a first feature extending from the resistance line and extending along a first direction; the lattice includes second features extending between the first features and extending along a second direction that intersects the first direction.

21. The integration assembly of claim 20, wherein the second direction is substantially orthogonal to the first direction.

22. The integration assembly of claim 20, wherein the first conductive contacts are subdivided among groups; and wherein each of the first features has an associated one of the sets of the first conductive contacts and is directly coupled with the first plate through the associated one of the sets of the first conductive contacts.

23. The integration assembly of claim 22, wherein each of the second features has an associated one of the sets of the first conductive contacts and is directly coupled with the first plate through the associated one of the sets of the first conductive contacts.

24. The assembly of claim 15, further comprising a first interconnect disposed along an additional conductive level above the capacitive sub-unit, the first interconnect coupled to the first plate.

25. The integrated assembly of claim 24, further comprising:

a third plate disposed along the conductive level and supplied with a second voltage, the input voltage contact area not being supplied with the second voltage; and

a second interconnect disposed along the additional conductive level and coupled to the third plate.