阅读说明：本技术 用于发光二极管中的表面复合速度降低的外延层的再生长 (Regrowth of epitaxial layers with reduced surface recombination velocity for use in light emitting diodes ) 是由 马库斯·布罗尔 迈克尔·格伦德曼 大卫·黄 史蒂芬·卢特根 布莱恩·马修·麦克斯金明 阿努 于 2020-03-30 设计创作，主要内容包括：本文公开了用于发光二极管(LED)阵列设备的方法、系统和设备。在一些实施方案中,LED阵列设备可以包括从层状外延结构蚀刻的多于一个台面。层状外延结构可以包括P型掺杂半导体层、有源层和N型掺杂半导体层。LED阵列设备还可以包括一个或更多个再生长半导体层,包括第一再生长半导体层,所述一个或更多个再生长半导体层可以在多于一个台面的经蚀刻的端面上外延生长。在一些情况下,对于每个台面,第一再生长半导体层可以围绕台面的整个周边覆盖P型掺杂半导体层、有源层和N型掺杂半导体层的经蚀刻的端面。(Methods, systems, and devices for Light Emitting Diode (LED) array devices are disclosed herein. In some embodiments, the LED array device may include more than one mesa etched from the layered epitaxial structure. The layered epitaxial structure may include a P-type doped semiconductor layer, an active layer, and an N-type doped semiconductor layer. The LED array device may further include one or more regrown semiconductor layers, including the first regrown semiconductor layer, which may be epitaxially grown on the etched end face of more than one mesa. In some cases, for each mesa, the first regrown semiconductor layer may cover the etched end faces of the P-type doped semiconductor layer, the active layer, and the N-type doped semiconductor layer around the entire perimeter of the mesa.)