阅读说明：本技术 一种n型单晶异质结太阳能电池薄膜沉积装备及其沉积方法 (N-type single crystal heterojunction solar cell thin film deposition equipment and deposition method thereof ) 是由 宋银海 姚飞 贾银海 钱锋 埃尔詹·英马兹 于 2019-09-10 设计创作，主要内容包括：本发明涉及一种N型单晶异质结太阳能电池薄膜沉积装备及其沉积方法,它包括：沉积组件,所述沉积组件包括依次连接的第一L/L腔室、第一本征I层沉积腔室、P型掺杂非晶硅薄膜沉积腔室、第一转换腔室、第二本征I层沉积腔室、N型掺杂非晶硅薄膜沉积腔室、第二转换腔室、PVD腔室以及第二L/L腔室,各腔体之间采用真空锁结构连接；输料组件,所述输料组件用于硅片的进料和出料,包括安装在所述沉积组件两端以及其各腔体内的输料单元。通过在沉积组件的两端以及其各腔体内安装输料单元,能够实现硅片的自动化进料和出料,从而提高了其自动化程度和生产效率。(The invention relates to a deposition device and a deposition method for an N-type single crystal heterojunction solar cell thin film, which comprises the following steps: the deposition assembly comprises a first L/L chamber, a first intrinsic I layer deposition chamber, a P-type doped amorphous silicon thin film deposition chamber, a first conversion chamber, a second intrinsic I layer deposition chamber, an N-type doped amorphous silicon thin film deposition chamber, a second conversion chamber, a PVD chamber and a second L/L chamber which are connected in sequence, and the chambers are connected by adopting a vacuum lock structure; the material conveying assembly is used for feeding and discharging the silicon wafers and comprises material conveying units which are arranged at two ends of the deposition assembly and in each cavity of the deposition assembly. Through installing defeated material unit in the both ends of depositing subassembly and each cavity thereof, can realize the automatic feeding and the ejection of compact of silicon chip to its degree of automation and production efficiency have been improved.)

1. An N-type single crystal heterojunction solar cell thin film deposition device is characterized by comprising:

the deposition assembly comprises a first L/L chamber, a first intrinsic I layer deposition chamber, a P-type doped amorphous silicon thin film deposition chamber, a first conversion chamber, a second intrinsic I layer deposition chamber, an N-type doped amorphous silicon thin film deposition chamber, a second conversion chamber, a PVD chamber and a second L/L chamber which are connected in sequence, and the chambers are connected by adopting a vacuum lock structure;

the material conveying assembly is used for feeding and discharging the silicon wafers and comprises material conveying units which are arranged at two ends of the deposition assembly and in each cavity of the deposition assembly.

2. The N-type single crystal heterojunction solar cell thin film deposition apparatus of claim 1, wherein: the deposition device further comprises a support frame body and an electric control box body arranged below the support frame body, and the deposition assembly is arranged on the support frame body.

3. The N-type single crystal heterojunction solar cell thin film deposition apparatus of claim 1, wherein: the device comprises a P-type doped amorphous silicon film deposition chamber, an N-type doped amorphous silicon film deposition chamber and a material conveying unit, wherein at least one group of hot wires for CVD deposition are independently arranged in the P-type doped amorphous silicon film deposition chamber and the N-type doped amorphous silicon film deposition chamber, and the material conveying unit comprises two rows of trays which are movably arranged on two sides of each hot wire and used for bearing silicon wafers.

4. The N-type single crystal heterojunction solar cell thin film deposition apparatus of claim 1, wherein: defining the material conveying units in the first conversion chamber as first material conveying units, the material conveying units in the second conversion chamber as second material conveying units, and the material conveying units in other chambers as third material conveying units; the first material conveying unit is used for exchanging the positions of two rows of trays in sequence, and the second material conveying unit is used for arranging the two rows of trays into a row.

5. The N-type single crystal heterojunction solar cell thin film deposition apparatus of claim 4, wherein: the first material conveying unit, the second material conveying unit and the third material conveying unit are mutually independent and comprise a transmission supporting frame body group, a transmission rod arranged on the transmission supporting frame body group, a magnetic fluid arranged at the outer end of the transmission rod and a motor connected with the magnetic fluid through a speed reducer, and the tray is arranged in the transmission supporting frame body group in a conveying mode.

6. The N-type single crystal heterojunction solar cell thin film deposition apparatus of claim 4, wherein: each group of transmission support frame body groups comprise two groups of transmission support frame bodies arranged at intervals, gears sleeved on the transmission rods and arranged in each group of transmission support frame bodies, and supporting seats arranged in each group of transmission support frame bodies; the tray is slidably mounted on the supporting seat, a rack is arranged at the top of the tray, the tray is vertically arranged, and the rack is meshed with the gear; every group transmission braced frame group still including install in every group in the transmission braced frame and with tray matched with prevents off tracking uide bushing and install side just supports on the tray gyro wheel on the supporting seat.

7. The N-type single crystal heterojunction solar cell thin film deposition apparatus of claim 4, wherein: still install mutually independently in first conversion cavity and the second conversion cavity with defeated material unit matched with switch assembly, switch assembly includes interior cavity, forms interior indoor roof and with first defeated material unit matched with multichannel switching guide rail, install on the outer wall of inner cavity and with switch guide rail correspond the setting about switching mechanism, install about switching mechanism go up and with the first translation mechanism that transmission supporting framework group is connected and install be used for on the outer wall of inner cavity with first translation mechanism matched with second translation mechanism.

8. The N-type single crystal heterojunction solar cell thin film deposition apparatus of claim 7, wherein: control switching mechanism including install the fixed plate of inner chamber outside, install the fixed plate with guide bar, slidable between the inner chamber install movable plate, one end on the guide bar with inner chamber is connected and runs through the ball of movable plate and installs switching motor about the ball tip.

9. The N-type single crystal heterojunction solar cell thin film deposition apparatus of claim 7, wherein: the first translation mechanism comprises a plurality of horizontal translation transmission rods, belt pulleys and a horizontal translation motor, one end of each horizontal translation transmission rod is connected with the transmission rod and penetrates through the moving plate, the belt pulleys are connected with the plurality of horizontal translation transmission rods, and the horizontal translation motor is installed at the end part of any one horizontal translation transmission rod.

10. A method for depositing a thin film of an N-type single crystal heterojunction solar cell, which uses the thin film deposition equipment of the N-type single crystal heterojunction solar cell of any one of claims 1 to 9, and which comprises the following steps:

(a) guiding two rows of silicon wafers loaded by the material conveying assembly into an L/L cavity for pretreatment;

(b) guiding the two rows of silicon wafers into a first intrinsic I layer deposition chamber to enable a hot wire to be positioned between the two rows of silicon wafers, and coating the opposite side surfaces of the two rows of silicon wafers by adopting hot wire CVD;

(c) continuously introducing the two rows of silicon wafers into a P-type doped amorphous silicon film deposition chamber, and coating films on the opposite side surfaces of the two rows of silicon wafers;

(d) introducing the two rows of silicon wafers into a first conversion chamber, and exchanging the positions of the silicon wafers to enable the coated surfaces to be arranged oppositely;

(e) sequentially introducing the two rows of silicon wafers into a second intrinsic I-layer deposition chamber to enable a hot wire to be positioned between the two rows of silicon wafers, and coating the opposite side surfaces of the two rows of silicon wafers by adopting hot wire CVD;

(f) continuously introducing the two rows of silicon wafers into an N-type doped amorphous silicon film deposition chamber, and coating films on the opposite side surfaces of the two rows of silicon wafers;

(g) introducing the two rows of silicon wafers into a second conversion chamber, so that the two rows of silicon wafers are combined into one row;

(h) introducing a row of silicon wafers into a PVD chamber to plate TCO films on two sides of the silicon wafers, and discharging the silicon wafers after passing through an L/L chamber; and sputtering cathodes are arranged on two sides of the silicon wafer in the PVD chamber.

Technical Field

The invention belongs to the field of vapor deposition equipment, relates to thin film deposition equipment, and particularly relates to N-type single crystal heterojunction solar cell thin film deposition equipment.

Background

The HIT solar cell is a hybrid solar cell made of a crystalline silicon substrate and an amorphous silicon thin film, and is a silicon solar cell adopting an HIT structure; the HIT (Hetero-junction with intrinsic thin layer) structure is formed by adding a layer of undoped (intrinsic) hydrogenated amorphous silicon film between P-type hydrogenated amorphous silicon and N-type hydrogenated amorphous silicon and an N-type silicon substrate, and after the technical measures are adopted, the performance of a PN junction is changed.

The preparation of the amorphous film becomes the most critical process step of the HIT solar cell, but the preparation of the amorphous film of the HIT cell has higher difficulty compared with the traditional amorphous film solar cell, and the reason is as follows: (1) the thickness of the amorphous prepared film of the HIT solar cell is thinner, the thickness of the I layer is 4-8 nm, the thickness of the N layer is 5-8 nm, and the thickness of the P layer is about 4-8 nm; (2) in industrial production, the amorphous film layer is required to be rapidly deposited, and meanwhile, the requirement on the uniformity of the film is required to be high, the uniformity is better than 6nm +/-3%, so that the requirement on PECVD (plasma enhanced chemical vapor deposition) equipment for preparing the amorphous film layer is very high, the radio frequency electric field of the equipment is required to be scientifically and reasonably designed, and the electric field uniformity reaches +/-1% in a large-area capacitive coupling radio frequency field. The requirements on the VHF power supply are extremely strict, a stable plasma field is established in 0.5S, and the glow is stable while the plasma concentration meets the requirements. It is obvious that the novel amorphous silicon thin film deposition equipment can be designed to replace the PECVD equipment, reduce the requirements on components and effectively improve the deposition efficiency, and the practical significance is achieved.

The application number 201821326561.0 Chinese utility model discloses a vertical HWCVD-PVD integrated device for manufacturing solar cells, which comprises an HWCVD cavity I deposited by an intrinsic amorphous silicon film, an HWCVD cavity I deposited by a doped amorphous silicon film, a transition cavity I, an HWCVD cavity II deposited by an intrinsic amorphous silicon film, an HWCVD cavity II deposited by a doped amorphous silicon film, a transition cavity II, a PVD cavity deposited by a TCO film and the like, wherein the cavities are connected in sequence by adopting a vacuum lock structure; the carrier plate adopts a double-carrier plate design, and the position for loading the silicon chip adopts a hollow design. The utility model discloses that the whole process of depositing amorphous silicon and TCO on two sides of the crystalline silicon heterojunction solar cell can be closed, and the oxidation and pollution are reduced; however, the patent does not disclose a specific structure of exchanging positions of the double carrier plates, and also does not disclose a structure of automatic feeding and discharging, which cannot meet the increasingly improved market requirement of preparing the amorphous film of the HIT solar cell.

Disclosure of Invention

In order to overcome the defects of the prior art, the invention aims to provide an N-type single crystal heterojunction solar cell thin film deposition device.

In order to achieve the purpose, the invention adopts the following technical scheme: an N-type single crystal heterojunction solar cell thin film deposition apparatus, comprising:

the deposition assembly comprises a first L/L chamber, a first intrinsic I layer deposition chamber, a P-type doped amorphous silicon thin film deposition chamber, a first conversion chamber, a second intrinsic I layer deposition chamber, an N-type doped amorphous silicon thin film deposition chamber, a second conversion chamber, a PVD chamber and a second L/L chamber which are connected in sequence, and the chambers are connected by adopting a vacuum lock structure;

the material conveying assembly is used for feeding and discharging the silicon wafers and comprises material conveying units which are arranged at two ends of the deposition assembly and in each cavity of the deposition assembly.

Preferably, the deposition device further comprises a support frame body and an electric control box body arranged below the support frame body, and the deposition assembly is arranged on the support frame body.

Optimally, at least one group of hot wires for CVD deposition are independently arranged in the P-type doped amorphous silicon film deposition chamber and the N-type doped amorphous silicon film deposition chamber, and the material conveying unit comprises two columns of trays which are movably arranged on two sides of each hot wire and used for bearing silicon wafers.

Optimally, the material conveying units in the first conversion chamber are defined as first material conveying units, the material conveying units in the second conversion chamber are defined as second material conveying units, and the material conveying units in other chambers are defined as third material conveying units; the first material conveying unit is used for exchanging the positions of two rows of trays in sequence, and the second material conveying unit is used for arranging the two rows of trays into a row.

Furthermore, the first material conveying unit, the second material conveying unit and the third material conveying unit are mutually independent and comprise a transmission supporting frame body group, a transmission rod arranged on the transmission supporting frame body group, a magnetic fluid arranged at the outer end of the transmission rod and a motor connected with the magnetic fluid through a speed reducer, and the tray is arranged in the transmission supporting frame body group in a conveying mode.

Furthermore, each group of transmission support frame bodies comprises two groups of transmission support frame bodies arranged at intervals, gears sleeved on the transmission rods and arranged in each group of transmission support frame bodies, and supporting seats arranged in each group of transmission support frame bodies; the tray is slidably mounted on the supporting seat, a rack is arranged at the top of the tray, the tray is vertically arranged, and the rack is meshed with the gear; every group transmission braced frame group still including install in every group in the transmission braced frame and with tray matched with prevents off tracking uide bushing and install side just supports on the tray gyro wheel on the supporting seat.

Further, still install mutually independently in first conversion cavity and the second conversion cavity with defeated material unit matched with switch assembly, switch assembly includes interior cavity, forms interior cavity roof and with first defeated material unit matched with multichannel switching guide rail, install on the outer wall of inner cavity and with switch guide rail correspond the setting about switching mechanism, install on the switching mechanism about and with the first translation mechanism that transmission braced frame body group is connected and install be used for on the outer wall of inner cavity with first translation mechanism matched with second translation mechanism.

Furthermore, control switching mechanism including install the fixed plate of inner chamber outside, install the fixed plate with guide bar, slidable between the inner chamber install movable plate, one end on the guide bar with the inner chamber is connected and runs through the ball of movable plate and install control switching motor of ball tip.

Furthermore, the first translation mechanism comprises a plurality of horizontal movement transmission rods, belt pulleys and a horizontal movement motor, wherein one end of each horizontal movement transmission rod is connected with the transmission rod and penetrates through the moving plate, the belt pulleys are connected with the plurality of horizontal movement transmission rods, and the horizontal movement motor is installed at the end part of any one horizontal movement transmission rod.

Still another object of the present invention is to provide a method for depositing a thin film of an N-type single crystal heterojunction solar cell, which uses the above-mentioned thin film deposition equipment for an N-type single crystal heterojunction solar cell, and comprises the following steps:

(a) guiding two rows of silicon wafers loaded by the material conveying assembly into an L/L cavity for pretreatment;

(b) guiding the two rows of silicon wafers into a first intrinsic I layer deposition chamber to enable a hot wire to be positioned between the two rows of silicon wafers, and coating the opposite side surfaces of the two rows of silicon wafers by adopting hot wire CVD;

(c) continuously introducing the two rows of silicon wafers into a P-type doped amorphous silicon film deposition chamber, and coating films on the opposite side surfaces of the two rows of silicon wafers;

(d) introducing the two rows of silicon wafers into a first conversion chamber, and exchanging the positions of the silicon wafers to enable the coated surfaces to be arranged oppositely;

(e) sequentially introducing the two rows of silicon wafers into a second intrinsic I-layer deposition chamber to enable a hot wire to be positioned between the two rows of silicon wafers, and coating the opposite side surfaces of the two rows of silicon wafers by adopting hot wire CVD;

(f) continuously introducing the two rows of silicon wafers into an N-type doped amorphous silicon film deposition chamber, and coating films on the opposite side surfaces of the two rows of silicon wafers;

(g) introducing the two rows of silicon wafers into a second conversion chamber, so that the two rows of silicon wafers are combined into one row;

(h) introducing a row of silicon wafers into a PVD chamber to plate TCO films on two sides of the silicon wafers, and discharging the silicon wafers after passing through an L/L chamber; and sputtering cathodes are arranged on two sides of the silicon wafer in the PVD chamber.

Due to the adoption of the technical scheme, the invention has the following beneficial effects: according to the amorphous silicon film deposition equipment for the solar cell, the material conveying units are arranged at the two ends of the deposition assembly and in the cavities of the deposition assembly, so that automatic feeding and discharging of silicon wafers can be realized, and the automation degree and the production efficiency of the deposition assembly are improved.

Drawings

FIG. 1 is a schematic structural diagram of an N-type single crystal heterojunction solar cell thin film deposition apparatus according to the present invention;

FIG. 2 is a schematic structural diagram of a material conveying assembly of the N-type single crystal heterojunction solar cell thin film deposition equipment of the invention;

FIG. 3 is a side view of a second feed unit of the N-type single crystal heterojunction solar cell thin film deposition equipment of the invention;

FIG. 4 is a top view of the switching assembly of the N-type single crystal heterojunction solar cell thin film deposition apparatus of the present invention.

Detailed Description

The following detailed description of the embodiments of the present invention is provided in conjunction with the accompanying drawings to enable those skilled in the art to more easily understand the advantages and features of the present invention, and to clearly and accurately define the scope of the present invention.

The N-type single crystal heterojunction solar cell thin film deposition equipment shown in figure 1 mainly comprises a deposition assembly 1, a material conveying assembly 4 and the like which are matched with each other.

The deposition assembly 1 comprises a first L/L cavity 11 (an A100L multistage Roots dry pump-L/L dry pump is used and is applied to rough pumping and pressure maintaining of a semiconductor L/L cavity and a Transfer cavity; the same applies below), a first intrinsic I layer deposition cavity 12, a P type doped amorphous silicon thin film deposition cavity 13, a first conversion cavity 14, a second intrinsic I layer deposition cavity 15, an N type doped amorphous silicon thin film deposition cavity 16, a second conversion cavity 17, a PVD cavity 18 and a second L/L cavity 19 which are connected in sequence, and the cavities are connected by adopting a vacuum lock structure; the deposition assembly 1 may also increase or decrease the number of chambers required depending on the needs of the deposition process. The material conveying assembly 4 comprises material conveying units which are arranged at two ends of the deposition assembly 1 and in each cavity of the deposition assembly, and the material conveying units are matched with each other to realize the feeding and discharging of two rows of silicon wafers. The N-type single crystal heterojunction solar cell thin film deposition equipment further comprises a support frame body 2 and an electric control box body 3 arranged below the support frame body 2, wherein the deposition assembly 1 is arranged on the support frame body 2; the electric control box body 3 is used for realizing automatic control (comprising a circuit, an air circuit and the like) of the components, and a control operation platform provided with control buttons can be added according to the requirement.

The material conveying units can be distinguished: the material conveying units in the first transfer chamber 14 are defined as a first material conveying unit, the material conveying units in the second transfer chamber 17 are defined as a second material conveying unit, and the material conveying units in the other chambers are defined as a third material conveying unit (the material conveying units in the other chambers are usually in one group, while the material conveying units in the first transfer chamber 14 and the second transfer chamber 17 are usually in two groups arranged in the front-back direction, as shown in fig. 4). The first material conveying unit, the second material conveying unit and the third material conveying unit are mutually independent and comprise a transmission supporting frame body group 41, a transmission rod 42 arranged on the transmission supporting frame body group, a magnetic fluid 43 arranged at the outer end of the transmission rod and a motor 45 connected with the magnetic fluid 43 through a speed reducer 44, and a tray 46 can be arranged in the transmission supporting frame body group in a conveying mode.

Specifically, the method comprises the following steps: the third material conveying unit comprises at least two groups of transmission supporting frame body groups 41 (which are of a conventional structure and are formed by assembling a plurality of frame bodies and are arranged at the top of the inner wall of each chamber, in the application, the two groups are arranged at intervals), transmission rods 42 penetrating through each group of transmission supporting frame body groups 41, magnetic fluid 43 arranged at the outer end of any transmission rod 42, a motor 45 connected with the magnetic fluid 43 through a speed reducer 44 and a plurality of trays 46 arranged in the transmission supporting frame body groups in a conveying way; each set of transmission support frame 41 includes two sets of transmission support frames 411 arranged at intervals, a gear 412 sleeved on the transmission rod 42 and arranged in each set of transmission support frame 411, and a support seat 416 arranged in each set of transmission support frame 411; the tray 46 is slidably mounted on the supporting seat 416, and the top of the tray 46 is provided with a rack 413 (a plurality of silicon chips can be placed on the tray 46), and the tray 46 is vertically arranged so that the rack 413 is meshed with the gears 412 corresponding to the two transmission supporting frame groups 41; each set of transmission support frame 41 further includes a deviation-preventing guide sleeve 414 installed in each set of transmission support frame 411 and engaged with the tray 46, and a roller 417 installed on the upper side (i.e. the upper part of the side) of the tray 46 and supported on the support seat 416; thus, the motor 45 can drive the transmission rod 42 to rotate, and further drive the gear 412 to rotate, and the rack 413 can synchronously drive the tray 46 to convey downstream (as shown in fig. 2 and 3); necessary supporting structures (similar to the aforementioned transmission supporting frame body group 41) can be additionally arranged below the supporting frame body 2, and the supporting structures are matched with other material conveying units, so that the tray 46 forms a circulating material conveying loop in the material conveying process. One set of first defeated material unit (being close with low reaches technology cavity) in two sets of first defeated material units can be the same with third defeated material unit structure, also can slightly adjust according to actual need: the two transmission rods 42 are arranged at intervals, so that the first material conveying unit is divided into two small units which are symmetrical left and right and work independently; the other set of first material delivery units (defined as the switching material delivery unit 40 close to the upstream process chamber) is a half structure of the first material delivery units. One group of the second material conveying units (close to the upstream process cavity) in the two groups of the second material conveying units has the same or similar structure with the other group of the first material conveying units (the switching material conveying unit 40); the other group of second material conveying units (which are close to the downstream process cavity) has the same or similar structure with the small independent working units. This is because two rows of trays need to be sequentially transposed in the first transfer chamber 14 and two rows of trays need to be arranged in a row in the second transfer chamber 17. In order to realize the position exchange and alignment of two groups of silicon wafers, the first conversion chamber 14 and the second conversion chamber 17 are also provided with a switching assembly 5 which is mutually independent and matched with the switching material conveying unit 40 and the group of second material conveying units (close to the upstream process chamber), the switching assembly 5 comprises an inner chamber 51, a plurality of switching guide rails 52 (the extension direction of the switching guide rails 52 is vertical to the material conveying direction, namely the switching guide rails 52 are vertical to the racks 413) which are formed on the inner top wall of the inner chamber 51 and matched with the switching material conveying unit 40 or the group of second material conveying units, a left switching mechanism 53 which is arranged on the outer wall of the inner chamber 51 and is corresponding to the switching guide rails 52, and a first flat switching mechanism 53 which is arranged on the left switching mechanism 53 and is connected with the switching material conveying unit 40 or the group of second material conveying units (the switching material conveying unit 40 or the group of second material conveying units is arranged on the switching guide rails 52 in a sliding way of the existing slide block & chute A translation mechanism 54 and a second translation mechanism 55 mounted on the outer wall of the inner chamber 51 for cooperating with the first translation mechanism 54 (the structure of the second translation mechanism 55 is substantially identical to that of the first translation mechanism 54); specifically, the method comprises the following steps: the left-right switching mechanism 53 includes a fixed plate 531 mounted outside the inner chamber 51, a guide bar 532 mounted between the fixed plate 531 and the inner chamber 51, a moving plate 533 slidably mounted on the guide bar 532, a ball screw 534 having one end connected to the inner chamber 51 and penetrating through the moving plate 533, and a left-right switching motor 535 mounted at an end of the ball screw 534; the first translation mechanism 54 includes a plurality of horizontal movement transmission rods 541 having one ends connected to the transmission rods (of the switching material feeding unit 40) and passing through the moving plate 533, a pulley 543 connecting the plurality of horizontal movement transmission rods 541, and a horizontal movement motor 542 installed at an end of any one of the horizontal movement transmission rods 541.

When in use, the switching material delivery unit 40 is first corresponding to the transmission supporting frame 41 of the upstream chamber to receive a tray to be delivered, then the left and right switching motor 535 drives the ball screw 534 to rotate to drive the moving plate 533 to move on the guide bar 532, so that the switching conveyor unit 40 corresponds to a downstream small unit (the small unit is offset from the tray input position; the horizontal movement motor 542 is activated and, thereby driving the horizontal moving transmission rod 541 to rotate, and continuously conveying the tray downstream to the small unit of the first conveying unit; then the material conveying unit 40 is switched to continuously support another tray, and the tray is translated in the opposite direction and corresponds to another small unit of the first material conveying unit at the downstream; synchronously starting a second translation mechanism 55 to convey the trays in the first conveying unit downstream; this is repeated (the principle of cooperation between the second feeding unit and the switching assembly 5 is similar to that described above).

The N-type single crystal heterojunction solar cell thin film deposition method uses the N-type single crystal heterojunction solar cell thin film deposition equipment, and specifically comprises the following steps:

(a) guiding two rows of silicon wafers carried by the material conveying assembly into an L/L cavity for pretreatment such as vacuumizing and heating;

(b) guiding the two rows of silicon wafers into a first intrinsic I layer deposition chamber to enable a hot wire to be positioned between the two rows of silicon wafers, and coating the opposite side surfaces of the two rows of silicon wafers by adopting hot wire CVD;

(c) continuously introducing the two rows of silicon wafers into a P-type doped amorphous silicon film deposition chamber, and coating films on the opposite side surfaces of the two rows of silicon wafers;

(d) introducing the two rows of silicon wafers into a first conversion chamber, and exchanging the positions of the silicon wafers to enable the coated surfaces to be arranged oppositely;

(e) sequentially introducing the two rows of silicon wafers into a second intrinsic I-layer deposition chamber to enable a hot wire to be positioned between the two rows of silicon wafers, and coating the opposite side surfaces of the two rows of silicon wafers by adopting hot wire CVD;

(f) continuously introducing the two rows of silicon wafers into an N-type doped amorphous silicon film deposition chamber, and coating films on the opposite side surfaces of the two rows of silicon wafers;

(g) introducing the two rows of silicon wafers into a second conversion chamber, so that the two rows of silicon wafers are combined into one row;

(h) introducing a row of silicon wafers into a PVD chamber to plate TCO films on two sides of the silicon wafers, and discharging the silicon wafers after passing through an L/L chamber; and sputtering cathodes are arranged on two sides of the silicon wafer in the PVD chamber.

The above embodiments are merely illustrative of the technical concept and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the content of the present invention and implement the invention, and not to limit the scope of the invention, and all equivalent changes or modifications made according to the spirit of the present invention should be covered by the scope of the present invention.