阅读说明：本技术 有机图像传感器 (Organic image sensor ) 是由 崔珉准 金宽植 李范硕 林海敏 赵万根 于 2019-03-04 设计创作，主要内容包括：提供了一种有机图像传感器。有机图像传感器包括包含彼此间隔开的多个第一电极的像素电极。有机图像传感器包括包含突出超过所述多个第一电极的表面的突出部的绝缘区。有机图像传感器包括在像素电极和绝缘区的突出部上的有机光电转换层。此外,有机图像传感器包括与像素电极相对并且在有机光电转换层上的第二电极。(an organic image sensor is provided. The organic image sensor includes a pixel electrode including a plurality of first electrodes spaced apart from each other. The organic image sensor includes an insulating region including a protrusion protruding beyond a surface of the plurality of first electrodes. The organic image sensor includes an organic photoelectric conversion layer on the pixel electrode and the protrusion of the insulating region. In addition, the organic image sensor includes a second electrode opposite to the pixel electrode and on the organic photoelectric conversion layer.)

1. An organic image sensor, comprising:

A pixel electrode including a plurality of first electrodes spaced apart from each other;

an insulating region including a protrusion protruding beyond a surface of the plurality of first electrodes;

An organic photoelectric conversion layer on the pixel electrode and the protrusion of the insulating region; and a second electrode opposite to the pixel electrode and on the organic photoelectric conversion layer.

2. the organic image sensor according to claim 1, wherein the insulating region further comprises an isolation insulating layer between the plurality of first electrodes to isolate the plurality of first electrodes from each other.

3. The organic image sensor of claim 2, wherein the protrusion of the insulating region is on the isolating insulating layer.

4. The organic image sensor according to claim 2, further comprising an interlayer insulating layer under the pixel electrode and the isolation insulating layer.

5. The organic image sensor of claim 1, wherein the surface comprises surfaces of the plurality of first electrodes that are coplanar with one another.

6. the organic image sensor of claim 1, wherein the second electrode comprises a single layer.

7. The organic image sensor according to claim 1, further comprising an anti-reflection layer and a condensing lens layer on the second electrode.

8. The organic image sensor according to claim 1, wherein the organic photoelectric conversion layer comprises a first convex portion that protrudes from a surface of the organic photoelectric conversion layer and overlaps the protruding portion of the insulating region.

9. the organic image sensor according to claim 8, wherein the second electrode includes a second convex portion that protrudes from a surface of the second electrode and overlaps the protruding portion and the first convex portion of the insulating region.

10. An organic image sensor, comprising:

A semiconductor substrate;

A pixel circuit on the semiconductor substrate;

An interlayer insulating layer on the pixel circuit;

An organic opto-electronic device comprising:

A pixel electrode including a plurality of first electrodes spaced apart from each other and insulated from each other by a separation insulating layer on the interlayer insulating layer;

A ridge portion protruding from a surface of the isolation insulating layer between the plurality of first electrodes;

an organic photoelectric conversion layer on the pixel electrode and the ridge portion; and

An opposite electrode facing the pixel electrode and including a second electrode on the organic photoelectric conversion layer; and

A via electrode in the interlayer insulating layer and electrically connecting the pixel circuit to the pixel electrode.

11. The organic image sensor according to claim 10,

wherein respective upper surfaces of the plurality of first electrodes are coplanar with each other, an

Wherein the ridge protrudes upwardly beyond the respective upper surfaces of the plurality of first electrodes.

12. The organic image sensor according to claim 10, wherein upper and lower surfaces of the plurality of first electrodes are flat surfaces.

13. The organic image sensor of claim 10, wherein a cross-section of the ridge comprises a hemispherical or quadrilateral shape.

14. An organic image sensor, comprising:

A semiconductor substrate;

A semiconductor optoelectronic device on the semiconductor substrate;

A first pixel circuit electrically connected to the semiconductor optoelectronic device on the semiconductor substrate;

An organic photoelectric device stacked on the semiconductor photoelectric device and including an organic photoelectric conversion layer; and

a second pixel circuit electrically connected to the organic photoelectric device on the semiconductor substrate,

Wherein the organic optoelectronic device comprises:

A pixel electrode including a plurality of first electrodes;

An insulating region including a first portion between the plurality of first electrodes and a protruding second portion protruding upward beyond respective upper surfaces of the plurality of first electrodes, wherein the organic photoelectric conversion layer is on the pixel electrode and the protruding second portion of the insulating region, and wherein

The first portion of the insulating region includes an isolation insulating layer that isolates the plurality of first electrodes from each other; and

A second electrode opposite to the pixel electrode and on the organic photoelectric conversion layer.

15. The organic image sensor of claim 14, further comprising a color filter layer on the semiconductor optoelectronic device,

wherein the organic optoelectronic device is on the color filter layer.

16. the organic image sensor according to claim 15,

wherein the color filter layer includes a red color filter or a blue color filter,

Wherein the semiconductor optoelectronic device comprises one of a plurality of semiconductor optoelectronic devices including a red semiconductor optoelectronic device and a blue semiconductor optoelectronic device, an

Wherein the organic photoelectric conversion layer is configured to absorb green light.

17. the organic image sensor of claim 14, further comprising an interlayer insulating layer on the semiconductor optoelectronic device and the first and second pixel circuits,

wherein the isolation insulating layer is on the interlayer insulating layer between the plurality of first electrodes, and

Wherein the protruding second portion of the insulating region protrudes from the insulating isolation layer.

18. the organic image sensor according to claim 14,

Wherein the semiconductor optoelectronic device comprises one of a plurality of semiconductor optoelectronic devices including a red semiconductor optoelectronic device and a blue semiconductor optoelectronic device stacked on the semiconductor substrate, an

Wherein the organic photoelectric conversion layer is configured to absorb green light.

19. The organic image sensor according to claim 14,

Wherein the respective upper surfaces of the plurality of first electrodes are coplanar with each other, an

wherein the organic photoelectric conversion layer and the second electrode include respective protrusions overlapping with the protruding second portions of the insulating regions.

20. the organic image sensor of claim 14, further comprising a via electrode,

wherein the plurality of first electrodes of the organic optoelectronic device are connected to the second pixel circuit via the via electrodes.

Technical Field

The present disclosure relates to an image sensor.

Background

In order to obtain a high-resolution image, the number of pixels in an image sensor (or a solid-state imaging device) has increased. In the image sensor, when the size of the pixel is reduced, the light receiving area of the photoelectric device may be reduced, and thus the optical sensitivity may be lowered.

Accordingly, a stacked organic image sensor in which an organic photoelectric device is stacked on a semiconductor photoelectric device formed on a semiconductor substrate has been proposed as an image sensor. The organic photoelectric device in the organic image sensor may include an organic photoelectric conversion layer.

Disclosure of Invention

The present inventive concept provides an organic image sensor including an organic photoelectric device having improved adhesion between an organic photoelectric conversion layer and an insulating layer and/or an electrode. The improved adhesion may improve a manufacturing yield of the organic image sensor and/or a reliability of the organic image sensor.

According to some embodiments of the inventive concept, an organic image sensor may include a pixel electrode including a plurality of first electrodes spaced apart from each other. The organic image sensor may include an insulating region including a protrusion protruding beyond surfaces of the plurality of first electrodes. The organic image sensor may include an organic photoelectric conversion layer on the pixel electrode and the protrusion of the insulating region. In addition, the organic image sensor may include a second electrode opposite to the pixel electrode and on the organic photoelectric conversion layer.

According to some embodiments of the inventive concept, an organic image sensor may include a semiconductor substrate. The organic image sensor may include a pixel circuit on a semiconductor substrate. The organic image sensor may include an interlayer insulating layer on the pixel circuit. The organic image sensor may include an organic photoelectric device. The organic photoelectric device may include a pixel electrode including a plurality of first electrodes spaced apart from each other and insulated from each other by a separation insulating layer on an interlayer insulating layer. The organic optoelectronic device may include a ridge protruding from a surface of the isolation insulating layer between the plurality of first electrodes. The organic photoelectric device may include an organic photoelectric conversion layer on the pixel electrode and the ridge portion. The organic photoelectric device may include a counter electrode facing the pixel electrode and including a second electrode on the organic photoelectric conversion layer. In addition, the organic image sensor may include a via electrode in the interlayer insulating layer and electrically connecting the pixel circuit to the pixel electrode.

According to some embodiments of the inventive concept, an organic image sensor may include a semiconductor substrate. The organic image sensor may include a semiconductor optoelectronic device on a semiconductor substrate. The organic image sensor may include a first pixel circuit electrically connected to a semiconductor optoelectronic device on a semiconductor substrate. The organic image sensor may include an organic photoelectric device stacked on a semiconductor photoelectric device and including an organic photoelectric conversion layer. In addition, the organic image sensor may include a second pixel circuit electrically connected to the organic photoelectric device on the semiconductor substrate. The organic optoelectronic device may include a pixel electrode including a plurality of first electrodes. The organic optoelectronic device may include an insulating region including a first portion between the plurality of first electrodes and a protruding second portion protruding upward beyond respective upper surfaces of the plurality of first electrodes. The organic photoelectric conversion layer may be on the pixel electrode and the protruding second portion of the insulating region. The first portion of the insulating region may include an isolation insulating layer isolating the plurality of first electrodes from each other. In addition, the organic photoelectric device may include a second electrode opposite to the pixel electrode and on the organic photoelectric conversion layer.

Drawings

Embodiments of the inventive concept will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

Fig. 1 is a block diagram of an image processing apparatus including an organic image sensor according to some embodiments of the inventive concept;

Fig. 2 is a top view of a pixel of an organic image sensor according to some embodiments of the inventive concept;

Fig. 3 is a cross-sectional view of a portion of an organic image sensor according to some embodiments of the inventive concept;

Fig. 4 is an enlarged view of a portion of an organic image sensor according to some embodiments of the inventive concept;

Fig. 5 is an enlarged view of a portion of an organic image sensor according to some embodiments of the inventive concept;

fig. 6A and 6B are views of a cross-sectional shape of a ridge of an organic photoelectric device according to some embodiments of the inventive concept;

Fig. 7A and 7B are circuit diagrams of a pixel circuit in an organic image sensor according to some embodiments of the inventive concept;

fig. 8A to 8C are circuit diagrams of pixel circuits in an organic image sensor according to some embodiments of the inventive concept;

Fig. 9 is a cross-sectional view of a portion of an organic image sensor according to some embodiments of the inventive concept;

fig. 10A to 10F are cross-sectional views illustrating a method of fabricating an organic photoelectric device according to some embodiments of the inventive concept; and

Fig. 11 is a block diagram of an electronic device to which an organic image sensor according to some embodiments of the inventive concept may be applied.

Detailed Description

Fig. 1 is a block diagram of an image processing apparatus 1 including an organic image sensor according to some embodiments of the inventive concept.

referring to fig. 1, an image processing apparatus 1 may include an organic image sensor 10 and an image processor 20. The organic image sensor 10 may include a pixel array 11, a row driver 12, a column driver 13, a timing controller 14, and a readout circuit 15.

the organic image sensor 10 may operate according to a control command of the image processor 20. The organic image sensor 10 may convert light reflected or transmitted from the object 30 into an electrical signal and output the electrical signal to the image processor 20. The pixel array 11 in the organic image sensor 10 may include a plurality of pixels PX. Each pixel PX may include a photoelectric device receiving light to generate electric charges.

In some embodiments, the optoelectronic device can comprise an organic optoelectronic device. In some embodiments, the optoelectronic device can further comprise a semiconductor optoelectronic device. The organic image sensor 10 may be a stacked image sensor in which an organic photoelectric device is stacked on a semiconductor photoelectric device formed in a semiconductor substrate or a plurality of organic photoelectric devices are stacked on a semiconductor substrate.

The organic photoelectric device may include a pixel electrode, an organic photoelectric conversion layer, and a counter electrode. The organic photoelectric conversion layer may be an organic photodiode. The semiconductor optoelectronic device may include a semiconductor photoelectric conversion layer. The semiconductor photoelectric conversion layer may be a semiconductor photodiode such as a silicon photodiode. Organic and semiconductor optoelectronic devices will be described in more detail later herein.

In some embodiments, each pixel PX may include two or more photoelectric devices, and the two or more photoelectric devices in one pixel PX may receive light of different colors to generate electric charges. Each pixel PX may include a pixel circuit for generating an electrical signal from charges generated by the photoelectric device.

In some embodiments, the pixel circuit may include a transfer transistor, a driving transistor, a selection transistor, a reset transistor, and the like. When one pixel PX has two or more photoelectric devices, each pixel PX may include a pixel circuit for processing charges generated by each of the two or more photoelectric devices.

the row driver 12 may drive the pixel array 11 in units of rows. For example, the row driver 12 may generate a transfer control signal for controlling a transfer transistor of each pixel PX, a reset control signal for controlling a reset transistor of each pixel PX, a selection control signal for controlling a selection transistor of each pixel PX, and the like.

the column driver 13 may include a Correlated Double Sampler (CDS), an analog-to-digital converter (ADC), and the like. The CDS may receive signals from the pixels PX in a row selected by the row selection signal supplied from the row driver 12 and perform correlated double sampling. The analog-to-digital converter may convert the output of the CDS into a digital signal and transfer the digital signal to the readout circuit 15.

The readout circuit 15 may include a latch or a buffer circuit, an amplification circuit, or the like capable of temporarily storing a digital signal. The readout circuit 15 may temporarily store or amplify the digital signals received from the column driver 13 to generate image data. The operating timing of the row driver 12, the column driver 13 and the readout circuit 15 may be determined by the timing controller 14.

The timing controller 14 may operate in response to a control command transmitted from the image processor 20. The image processor 20 may process the image data transmitted by the readout circuit 15, and may output the processed image data to a display device or the like, or store the processed image data in a storage device such as a memory.

Fig. 2 is a top view of a pixel of an organic image sensor 10a according to some embodiments of the inventive concept, and fig. 3 is a cross-sectional view of a portion of the organic image sensor 10a according to some embodiments of the inventive concept.

Referring to fig. 2 and 3, the organic image sensor 10a may be an organic CMOS image sensor. As shown in fig. 2, the pixel PX of the organic image sensor 10a may have a form in which a green pixel G is stacked on a blue pixel B and a red pixel R. The blue pixel B selectively absorbs light in the blue wavelength range (blue light), the red pixel R selectively absorbs light in the red wavelength range (red light), and the green pixel G selectively absorbs light in the green wavelength range (green light).

As shown in fig. 3, the organic image sensor 10a may include semiconductor photoelectric devices 50a and 50b, an organic photoelectric device 100, and first and second pixel circuits 110 and 120. The organic image sensor 10a may be a stacked image sensor in which the organic photoelectric device 100 is stacked on the semiconductor photoelectric devices 50a and 50b in a Z direction perpendicular to the semiconductor substrate 40.

in other words, the organic image sensor 10a is a stacked image sensor in which the organic photoelectric device 100 is stacked on the semiconductor photoelectric devices 50a and 50b on the semiconductor substrate 40 in the Z direction perpendicular to the X-Y plane. The semiconductor optoelectronic devices 50a and 50b and the first and second pixel circuits 110 and 120 may be formed or implemented on a semiconductor substrate 40. The semiconductor substrate 40 may be a silicon substrate.

The semiconductor optoelectronic devices 50a and 50b may be electrically connected to the first pixel circuit 110. The organic optoelectronic device 100 may be electrically connected to the second pixel circuit 120 through the via electrode 90. The semiconductor optoelectronic devices 50a and 50b and the organic optoelectronic device 100 may be integrated for each pixel. For example, the semiconductor photoelectric devices 50a and 50B may be included in the blue pixel B and the red pixel R, respectively, and the organic photoelectric device 100 may be included in the green pixel G. The semiconductor photoelectric devices 50a and 50b and the organic photoelectric device 100 may sense light, and the sensed information may be transmitted to the first and second pixel circuits 110 and 120.

The metal wiring 62 and the pad 64 may be formed on the semiconductor substrate 40. The metal wiring 62 and the pad 64 may include a metal having a low resistivity to reduce signal delay, such as, but not limited to, aluminum (Al), copper (Cu), silver (Ag), or an alloy thereof. In some embodiments, the metal wiring 62 and the pad 64 may be located on the semiconductor optoelectronic devices 50a and 50 b.

A lower interlayer insulating layer 60, an upper interlayer insulating layer 80, and a separation insulating layer 87 may be formed on the metal wiring 62 and the pad 64. The lower interlayer insulating layer 60, the upper interlayer insulating layer 80, and the isolation insulating layer 87 may each be an inorganic insulating layer such as a silicon oxide layer and/or a silicon nitride layer, or a low-K insulating layer such as a silicon carbide (SiC) layer, a hydrogenated silicon oxycarbide (SiCOH) layer, a silicon oxycarbide (SiCO) layer, or a fluorinated silicon oxide (SiOF) layer. A via hole 85 may be formed in the lower interlayer insulating layer 60 and the upper interlayer insulating layer 80, and a via electrode 90 may be formed in the via hole 85.

The color filter layer 70 may be formed on the lower interlayer insulating layer 60. The color filter layer 70 may include a blue color filter 70B formed in the blue pixel B and a red color filter 70R formed in the red pixel R. Although an example in which the green color filter is not provided is described with reference to fig. 2 and 3, the green color filter may be provided in some cases.

An upper interlayer insulating layer 80 and a separation insulating layer 87 may be formed on the color filter layer 70. The organic photoelectric device 100 may be formed on the upper interlayer insulating layer 80. The organic photoelectric device 100 may include a pixel electrode PE including a plurality of first electrodes 102, a ridge portion (or other protruding portion) 104 protruding beyond a surface of the first electrodes 102 between the first electrodes 102, an organic photoelectric conversion layer 106 formed on the pixel electrode PE and the ridge portion 104, and a counter electrode CE including a second electrode 108 on the organic photoelectric conversion layer 106.

In some embodiments, the pixel electrode PE and the opposite electrode CE may be transparent electrodes (or light-transmissive electrodes). The transparent electrode may include a conductive oxide such as Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), zinc oxide (ZnO), tin oxide (SnO), aluminum tin oxide (AlTO), or fluorine-doped tin oxide (FTO), or a metal thin film including multiple layers or a single layer having a small thickness.

A certain (e.g., predetermined) voltage may be applied to the counter electrode CE through the wiring. Accordingly, an electric field may be applied between the counter electrode CE and the pixel electrode PE. The pixel electrode PE may be a charge collecting electrode for collecting charges generated in the organic photoelectric conversion layer 106.

The organic photoelectric conversion layer 106 may be configured to selectively absorb light in a green wavelength range, and may replace a color filter of a green pixel (e.g., may be used instead of a color filter of a green pixel). The organic photoelectric conversion layer 106 may generate charges from light due to a photoelectric effect, and may include an organic material. The organic photoelectric conversion layer 106 may include a p-type layer whose dominant carrier is a hole and an n-type layer whose dominant carrier is an electron.

In some embodiments, the p-type layer of the organic photoelectric conversion layer 106 may include a 3, 4-Ethylenedioxythiophene (EDOT) derivative. For example, hexa-3, 4-ethylenedioxythiophene can be used as the EDOT derivative. The n-type layer of the organic photoelectric conversion layer 106 may include Alq3 or naphthalene-1, 4,5, 8-tetracarboxylic dianhydride (NTCDA). A cyanine-based dye, a squaraine-based pigment, or the like may be used as the p-type layer, and fullerene (C60) or the like may be used as the n-type layer.

The organic photoelectric conversion layer 106 may generate charges in response to light in a specific wavelength band. In some embodiments, the organic photoelectric conversion layer 106 may generate charges in response to green light. In this case, light of other colors than green may be transmitted to the color filter layer 70. When light is incident from the second electrode 108, light in the green wavelength range may be mainly absorbed by the organic photoelectric conversion layer 106 to be photoelectrically converted, and light in the remaining wavelength range may pass through the first electrode 102 and be sensed by the semiconductor photoelectric devices 50a and 50 b.

The ridge portion 104 may include the same material as the isolation insulating layer 87. The ridge 104 may have a form protruding from the insulating layer 87. In the organic image sensor 10a, the contact area between the insulating region/layer including/forming the ridge portion 104 and the isolation insulating layer 87 and the organic photoelectric conversion layer 106 can be increased. In other words, in the organic image sensor 10a, the adhesion between the insulating region/layer including/forming the ridge portion 104 and the isolation insulating layer 87 and the organic photoelectric conversion layer 106 can be improved.

Therefore, a phenomenon (i.e., a peeling-off phenomenon) in which the organic photoelectric conversion layer 106 peels off at the interface between the pixel electrode PE and the organic photoelectric conversion layer 106 or the interface between the insulating spacer 87 and the organic photoelectric conversion layer 106 in the process of manufacturing the organic image sensor 10a, for example, in the process of removing the front side polishing tape (polishing tape) after the back side polishing for reducing the thickness of the semiconductor substrate 40 can be suppressed. The organic optoelectronic device 100 including the ridge 104 will be described in more detail later herein.

the anti-reflective layer 92 and the condensing lens layer 96 may also be formed on the organic photoelectric device 100. The anti-reflective layer 92 may inhibit/prevent the incident light 98 from being reflected. The condensing lens layer 96 may control the direction of incident light 98 to condense the light to one point. The cross section of the condensing lens layer 96 may be cylindrical or hemispherical, but is not limited thereto.

Since the organic photoelectric device 100 has a stacked structure, the organic image sensor 10a may have a reduced size. Although the stack structure of the organic photoelectric device 100 that selectively absorbs light in the green wavelength range (green light) has been described with reference to fig. 2 and 3 as an example, the inventive concept is not limited thereto.

in some embodiments, the organic image sensor 10a may have a structure in which organic photoelectric devices 100 selectively absorbing blue light are stacked and a semiconductor photoelectric device absorbing green light and a semiconductor photoelectric device absorbing red light are integrated in the semiconductor substrate 40. In some embodiments, the organic image sensor 10a may have a structure in which an organic photoelectric device 100 selectively absorbing red light is stacked and a semiconductor photoelectric device absorbing green light and a semiconductor photoelectric device absorbing blue light are integrated in the semiconductor substrate 40.

Fig. 4 is an enlarged view of a portion of an organic image sensor according to some embodiments of the inventive concept.

Specifically, fig. 4 may be an enlarged view of a portion ELV of the organic image sensor 10a of fig. 3. As described above, the organic image sensor 10a may include the organic photoelectric device 100. The organic optoelectronic device 100 may include a pixel electrode PE including a plurality of first electrodes 102.

An isolation insulating layer 87 for insulating the first electrodes 102 may be formed between the first electrodes 102. The upper interlayer insulating layer 80 may be formed under the first electrode 102 and the isolation insulating layer 87. The respective upper surfaces 102S1 of the first electrodes 102 may be coplanar with each other. The upper surface 102S1 of the first electrode 102 may be a flat surface. The lower surface 102B1 of the first electrode 102 may be a flat surface.

The organic optoelectronic device 100 may include a ridge 104 protruding upward in the Z-direction between the first electrodes 102 beyond the surface of the first electrodes 102. As described above, the ridge portion 104 may have a form protruding from the insulating layer 87.

in the organic photoelectric device 100, the contact area between the surface 104S1 of the ridge 104 and the organic photoelectric conversion layer 106 may be increased due to the ridge 104. In the organic photoelectric device 100, the adhesion between the organic photoelectric conversion layer 106 and the insulating region/layer including/forming the ridge portion 104 and the isolation insulating layer 87 may be improved.

Therefore, a phenomenon (i.e., a peeling-off phenomenon) in which the organic photoelectric conversion layer 106 peels off at the interface between the pixel electrode PE and the organic photoelectric conversion layer 106 or the interface between the insulating spacer 87 and the organic photoelectric conversion layer 106 during the process of manufacturing the organic photoelectric device 100 can be suppressed. The ridge 104 may have various shapes. For example, the ridge 104 may have a hemispherical shape. The ridge 104 may have a height H1, and the height H1 may be adjusted according to the manufacturing process.

The organic photoelectric device 100 may include an organic photoelectric conversion layer 106 formed on the pixel electrode PE and the ridge portion 104. The surface 106S1 of the organic photoelectric conversion layer 106 may be planarized to a flat surface. The organic photoelectric device 100 may include a counter electrode CE including a second electrode 108 on the organic photoelectric conversion layer 106. The second electrode 108 constituting the opposite electrode CE may include a single layer. The surface 108S1 of the counter electrode CE may be planarized to a flat surface.

Fig. 5 is an enlarged view of a portion of an organic image sensor according to some embodiments of the inventive concept.

Specifically, fig. 5 may be an enlarged view of a portion ELV of the organic image sensor 10a of fig. 3. Compared to fig. 4, fig. 5 may be the same as fig. 4 except for the ridge portion 104a, the organic photoelectric conversion layer 106, and the opposite electrode CE. In fig. 5, the same reference numerals as those in fig. 4 denote

Elements/components identical to those in fig. 4, and the description identical to that described with reference to fig. 4 will be omitted or briefly described.

the organic optoelectronic device 100 in fig. 5 may include a ridge 104 a. The surface 104S2 of the ridge portion 104a may contact the organic photoelectric conversion layer 106. The height H2 of ridge 104a may be lower than the height H2 of ridge 104 in fig. 4. The curvature of the ridge 104a may be smaller than that of the ridge 104 in fig. 4.

by variously adjusting the height or curvature of the ridge portion 104a, the contact area between the surface 104S2 of the ridge portion 104a and the organic photoelectric conversion layer 106 can be adjusted, and thus the adhesion between the organic photoelectric conversion layer 106 and the ridge portion 104a and between the organic photoelectric conversion layer 106 and the insulating layer 87 can be adjusted. Accordingly, the organic photoelectric device 100 in fig. 5 can suppress a phenomenon in which the organic photoelectric conversion layer 106 peels off from the pixel electrode PE, the insulating spacer 87, and the upper interlayer insulating layer 80 (i.e., a peeling phenomenon).

In the organic photoelectric device 100 of fig. 5, the first projections (i.e., outwardly bulging portions) 107 protruding from the surface 106S2 of the organic photoelectric conversion layer 106 may be formed in portions of the organic photoelectric conversion layer 106 corresponding to (e.g., overlapping/aligned with) the ridge portion 104 a. The second convex portion 109 protruding from the surface 108S2 of the counter electrode CE may be formed in a portion of the counter electrode CE corresponding to (e.g., overlapping/aligned with) the ridge portion 104a and the first convex portion 107.

In the organic photoelectric device 100 of fig. 5, the contact area between the organic photoelectric conversion layer 106 and the opposite electrode CE may be increased due to the first protrusion 107, thereby improving adhesion. Therefore, a phenomenon in which the organic photoelectric conversion layer 106 peels off (i.e., a peeling-off phenomenon) at the interface between the organic photoelectric conversion layer 106 and the counter electrode CE can be suppressed. In addition, in the organic optoelectronic device 100 of fig. 5, due to the second protrusion 109, the adhesion between the opposite electrode CE and the anti-reflection layer (see the anti-reflection layer 92 in fig. 3) may be further improved.

Fig. 6A and 6B are views of cross-sectional shapes of ridges 104B and 104c of an organic photoelectric device according to some embodiments of the inventive concept.

in particular, the ridges 104B and 104c of fig. 6A and 6B may be employed in the organic optoelectronic device 100 of fig. 4 and 5. The ridges 104B and 104c of fig. 6A and 6B may be replaced with the ridges 104 and 104a in the organic optoelectronic device 100 of fig. 4 and 5.

The cross section of the ridge 104b in fig. 6A may have a rectangular shape. The cross section of the ridge 104c in fig. 6B may have a rectangular shape with chamfered portions 105 formed at the edges. The surfaces 104S3 and 104S4 having the ridges 104b and 104c of rectangular shapes may contact the organic photoelectric conversion layer 106.

the ridge portions 104B and 104c of fig. 6A and 6B can increase the contact area with the organic photoelectric conversion layer 106. Therefore, a phenomenon (i.e., a peeling-off phenomenon) in which the organic photoelectric conversion layer 106 peels off from the insulating spacer 87 or the upper interlayer insulating layer 80 of fig. 4 and 5 can be suppressed.

Fig. 7A and 7B are circuit diagrams of pixel circuits in an organic image sensor according to some embodiments of the inventive concept.

Specifically, fig. 7A and 7B may be circuit diagrams of the first pixel circuit 110 connected to the semiconductor photoelectric devices 50a and 50B shown in fig. 3. The first pixel circuit 110 may be included in one pixel (e.g., the pixel PX in fig. 1). An example of the first pixel circuit 110 of fig. 3 may include the first pixel circuits 110A and 110B of fig. 7A and 7B.

Referring to fig. 7A, the first pixel circuit 110A in each pixel may include a plurality of transistors, i.e., a reset transistor RX, a driving transistor DX, a transmission transistor TX, and a selection transistor SX. The first pixel circuit 110A may be connected to the semiconductor photodiodes PD implemented as the above-described semiconductor photoelectric devices 50A and 50 b.

The charge generated by the semiconductor photodiode PD may be transferred to the floating diffusion FD via the transfer transistor TX, and the transferred charge may be accumulated in the floating diffusion FD. The transmission transistor TX may operate in response to a transmission control signal TS transmitted to a gate electrode of the transmission transistor TX.

The driving transistor DX can operate as a source follower buffer amplifier by the charges accumulated in the floating diffusion FD. The driving transistor DX may amplify the charges accumulated in the floating diffusion FD and transfer the amplified charges to the selection transistor SX.

The selection transistor SX may operate in response to a selection control signal SEL for selecting a certain pixel (e.g., the pixel PX in fig. 1) in a pixel array (e.g., the pixel array 11 in fig. 1), and may perform switching and addressing operations. When a selection control signal SEL is input from a row driver (e.g., row driver 12 in fig. 1), the selection transistor SX may output an electrical signal Vpix to a column line connected to the pixel PX.

The reset transistor RX may operate in response to a reset control signal RS transmitted from a row driver (e.g., the row driver 12 in fig. 1). The reset transistor RX may reset the voltage of the floating diffusion FD to the power supply voltage VDD when receiving the reset control signal RS.

Referring to fig. 7B, the first pixel circuit 110B according to some embodiments may be different from the first pixel circuit of fig. 7A, and may include three transistors, i.e., a reset transistor RX, a driving transistor DX, and a transmission transistor TX. That is, unlike the first pixel circuit 110A according to the example shown in fig. 7A, the first pixel circuit 110B may include only three transistors, i.e., a reset transistor RX, a drive transistor DX, and a transmission transistor TX. The reset transistor RX may reset the voltage of the floating diffusion FD to the power supply voltage VDD in response to a reset control signal RS transmitted from a row driver (e.g., the row driver 12 in fig. 1), or set the voltage of the floating diffusion FD to a low level, for example, a voltage of 0 v, to perform a function similar to that of the select transistor SX shown in fig. 7A.

fig. 8A to 8C are circuit diagrams of pixel circuits in an organic image sensor according to some embodiments of the inventive concept.

Specifically, fig. 8A to 8C may be circuit diagrams of the second pixel circuit 120 connected to the organic photoelectric device 100 shown in fig. 3. The second pixel circuit 120 may be included in one pixel (e.g., the pixel PX in fig. 1). An example of the second pixel circuit 120 of fig. 3 may include the second pixel circuits 120A, 120B, and 120C of fig. 8A to 8C.

referring to fig. 8A, the second pixel circuit 120A may include a driving transistor DX, a reset transistor RX, and a selection transistor SX. The gate terminal of the driving transistor DX may be connected to the floating diffusion region FD, and the floating diffusion region FD may accumulate charges generated by the above-described organic photoelectric device 100. In some embodiments, the organic optoelectronic device 100 may be an organic photodiode OPD1 comprising an organic material.

The operation of the second pixel circuit 120A shown in fig. 8A may be similar to the operation of the first pixel circuit 110A shown in fig. 7A. In fig. 8A, the organic photodiode OPD1 may include electrons as a major carrier. When electrons are used as the main carriers, the cathode of the organic photodiode OPD1 may be connected to a ground voltage or a first reference voltage V1 having a negative voltage of about-0.3 volts to about-0.5 volts.

Referring to fig. 8B, the second pixel circuit 120B may include a driving transistor DX, a reset transistor RX, and a selection transistor SX. The organic photodiode OPD2 in the second pixel circuit 120B shown in fig. 8B may use holes as the main carriers. When holes are used as the main carriers, the organic photodiode OPD2 may be connected to the floating diffusion region FD in the direction opposite to that of fig. 8A. That is, the cathode of the organic photodiode OPD2 may be connected to the floating diffusion region FD, and the anode of the organic photodiode OPD2 may be connected to the second reference voltage V2.

In some embodiments, second reference voltage V2 may have a voltage of a few volts, for example, about 3.5 volts. Since the organic photodiode OPD2 has holes as the major carriers, the drain terminal of the reset transistor RX may be connected to a voltage other than the power supply voltage VDD, for example, the read voltage VRD.

Referring to fig. 8C, the second pixel circuit 120C may include a driving transistor DX, a reset transistor RX, a selection transistor SX, and a transfer transistor TX. That is, the second pixel circuit 120C shown in fig. 8C may be similar to the first pixel circuit 110A shown in fig. 7A. In fig. 8C, the organic photodiode OPD1 may be replaced by an organic photoelectric device such as an organic photodiode OPD2 that uses holes as the predominant carriers.

fig. 9 is a cross-sectional view of a portion of an organic image sensor 10b according to some embodiments of the inventive concept.

Referring to fig. 9, compared to the organic image sensor 10a of fig. 3, the organic image sensor 10b may be the same as the organic image sensor 10a of fig. 3 except that a color filter layer is not formed (i.e., omitted) and semiconductor photoelectric devices 50a and 50b are stacked. In fig. 9, the same reference numerals as those in fig. 3 denote the same elements/components as those in fig. 3, and the description same as that described with reference to fig. 3 will be omitted or briefly described.

in the organic image sensor 10b, the semiconductor photoelectric devices 50a and 50b are stacked in a vertical direction (i.e., Z direction) as compared with the organic image sensor 10a of fig. 3, and the color filter layer is not formed. The semiconductor optoelectronic devices 50a and 50b are electrically connected to the first pixel circuit 110. The semiconductor photoelectric devices 50a and 50b can selectively absorb light in a blue wavelength range (blue light) and light in a red wavelength range (red light), respectively.

The organic photoelectric device 100 is stacked on the semiconductor photoelectric devices 50a and 50 b. The organic photoelectric device 100 has been described above, and thus, a repetitive description of the organic photoelectric device 100 is omitted. An anti-reflection layer and a condensing lens layer may also be formed on the organic photoelectric device 100.

The organic image sensor 10b has a structure in which a semiconductor photoelectric device 50a as a blue semiconductor photoelectric device and a semiconductor photoelectric device 50b as a red semiconductor photoelectric device are stacked under the organic photoelectric device 100 that selectively absorbs light in the green wavelength range, and thus the size of the organic image sensor 10b can be further reduced, thereby realizing a miniaturized image sensor.

A structure in which organic photoelectric devices 100 for selectively absorbing light in a green wavelength range are stacked has been described as an example with reference to fig. 9. However, the inventive concept is not limited thereto, and the organic image sensor 10b may have a structure in which organic photoelectric devices selectively absorbing light in a blue wavelength range are stacked and a semiconductor photoelectric device absorbing green light and a semiconductor photoelectric device absorbing red light are integrated in the semiconductor substrate 40. In some embodiments, the organic image sensor 10b may have a structure in which organic photoelectric devices selectively absorbing light in a red wavelength range are stacked and a semiconductor photoelectric device absorbing green light and a semiconductor photoelectric device absorbing blue light are integrated in the semiconductor substrate 40.

Fig. 10A to 10F are cross-sectional views illustrating a method of fabricating an organic photoelectric device according to some embodiments of the inventive concept.

Referring to fig. 10A, a plurality of via electrodes 90 are formed in an upper interlayer insulating layer 80 on a semiconductor substrate. A pixel electrode PE including first electrodes 102 spaced apart from each other is formed on the via electrode 90. The first electrode 102 may be formed by forming a conductive film on the upper interlayer insulating layer 80 and then patterning the conductive film.

the via electrode 90 may be electrically connected to the first electrode 102. The hole 82 may be formed to expose a portion of the upper interlayer insulating layer 80 via the pixel electrode PE. The pixel electrode PE may be a component of an organic opto-electronic device.

Referring to fig. 10B, a first insulating layer 208 is formed in the hole 82 (e.g., fills the hole 82) on the pixel electrode PE and the upper interlayer insulating layer 80, and then planarized. Accordingly, the isolation insulating layer 87 that isolates the first electrodes 102 from each other (physically and electrically) may be formed between the first electrodes 102.

Referring to fig. 10C and 10D, a second insulating layer 210 is formed on the pixel electrode PE and the isolation insulating layer 87, as shown in fig. 10C. Next, as shown in fig. 10D, a photoresist pattern 220 is formed on the second insulating layer 210. A photoresist pattern 220 is formed on the isolation insulating layer 87.

Referring to fig. 10E, after the second insulating layer 210 is etched using the photoresist pattern 220 (see fig. 10D) as a mask, the photoresist pattern 220 is stripped and removed. In this way, the ridge portion 104 may be formed on the isolation insulating layer 87. The ridge 104 may be a component of an organic optoelectronic device. When the photoresist pattern 220 is stripped, the shape of the ridge 104 may be determined according to the etching degree of the second insulating layer 210.

referring to fig. 10F, an organic photoelectric conversion layer 106 is formed on the ridge portion 104 and the pixel electrode PE. The contact area between the organic photoelectric conversion layer 106 and the insulating region/layer including the ridge portion 104 and the isolation insulating layer 87 can be increased due to the ridge portion 104. Next, the opposite electrode CE including the second electrode 108 is formed on the organic photoelectric conversion layer 106 to form the organic photoelectric device 100. Then, an anti-reflection layer 92 and a condensing lens layer 96 may be formed on the organic photoelectric device 100.

Fig. 11 is a block diagram of an electronic device to which an organic image sensor 410 according to some embodiments of the inventive concept may be applied.

Referring to fig. 11, an organic image sensor 410 according to some embodiments of the inventive concept may be applied to a computer apparatus 400. In addition to the organic image sensor 410, the computer apparatus 400 may also include an input/output device 420, a memory 430, a processor 440, and a port 450. Further, the computer apparatus 400 may further include wired/wireless communication means, power supply means, and the like. The port 450 may be a device through which the computer apparatus 400 communicates with a video card, a sound card, a memory card, a USB device, or the like. Examples of computer device 400 may include, in addition to general purpose desktop and laptop computers, smart phones, tablet computers (e.g., tablet Personal Computers (PCs)), and smart wearable devices.

processor 440 may perform certain operations, commands, tasks, and the like. The processor 440 may be a Central Processing Unit (CPU) or a microcontroller unit (MCU) and may communicate with the memory 430, the input/output device 420, the organic image sensor 410, and other devices connected to the port 450 via the bus 460.

The memory 430 may be a storage medium for storing data required for the operation of the computer device 400, or multimedia data. The memory 430 may include volatile memory, such as Random Access Memory (RAM), or non-volatile memory, such as flash memory. The memory 430 may further include at least one of a Solid State Drive (SSD), a Hard Disk Drive (HDD), and an Optical Disk Drive (ODD) as a storage device.

the input/output device 420 may include an input device such as a keyboard, a mouse, and a touch screen, and an output device such as a display and an audio output unit, which are provided to a user. The organic image sensor 410 may be coupled to the processor 440 via the bus 460 or another communication unit. Processor 440 may perform the functions of image processor 20 of fig. 1. The organic image sensor 410 may be one of the organic image sensors 10a or 10b described above.

While the present inventive concept has been particularly shown and described with reference to example embodiments thereof, it will be understood that various changes in form and details may be made therein without departing from the scope of the appended claims.

This application claims the benefit of korean patent application No. 10-2018-0064483, filed on 4.6.2018 to the korean intellectual property office, the disclosure of which is incorporated herein by reference in its entirety.