阅读说明：本技术 基于反铁磁性材料的纳米太赫兹波振荡器阵列及制备方法 (Nanometer THz wave oscillator array and preparation method based on antiferromagnetic materials ) 是由 金立川 贾侃成 何昱杰 张怀武 唐晓莉 钟智勇 杨青慧 于 2019-07-16 设计创作，主要内容包括：一种基于反铁磁性材料的纳米太赫兹波振荡器阵列及制备方法,属于微波电子设备技术领域。所述纳米太赫兹波振荡器阵列为多个单元器件组成的阵列结构,所述单元器件包括非磁性重金属薄膜层和位于非磁性重金属薄膜层之上的反铁磁薄膜层,多个单元器件通过位于非磁性重金属薄膜层下表面的电极串联。本发明基于反铁磁性材料的纳米太赫兹波振荡器阵列,通过调节导电电极流过的电流强度可实现不同功率的高频太赫兹波输出,输出太赫兹波信号性能良好,并且结构简单,功耗低,易与CMOS集成。(A kind of nanometer THz wave oscillator array and preparation method based on antiferromagnetic materials, belongs to microwave electronics technical field.The nanometer THz wave oscillator array is the array structure of multiple unit components composition, the unit component includes non magnetic heavy metal film layer and the antiferromagnet film layer on non magnetic heavy metal film layer, and multiple unit components are connected by being located at the electrode of non magnetic heavy metal film layer lower surface.The present invention is based on the nanometer THz wave oscillator arrays of antiferromagnetic materials, the high frequency THz wave output of different capacity can be realized by adjusting the current strength that conductive electrode flows through, and output terahertz wave signal is functional, and structure is simple, it is low in energy consumption, it is easily integrated with CMOS.)

1. the nanometer THz wave oscillator array based on antiferromagnetic materials, which is characterized in that the nanometer THz wave vibration The array structure that device array is multiple unit components composition is swung, the unit component includes non magnetic heavy metal film layer and is located at Antiferromagnet film layer on non magnetic heavy metal film layer, multiple unit components are by being located under non magnetic heavy metal film layer The electrode on surface is connected.

2. the nanometer THz wave oscillator array according to claim 1 based on antiferromagnetic materials, which is characterized in that The array structure is rectangular array, triangular array or honey-comb shape array.

3. the nanometer THz wave oscillator array according to claim 1 based on antiferromagnetic materials, which is characterized in that The antiferromagnet film layer is nickel oxide, FeMn, InMn or bismuth ferrite.

4. the nanometer THz wave oscillator array according to claim 1 based on antiferromagnetic materials, which is characterized in that The non magnetic heavy metal film layer is platinum metal film, tantalum metallic film, tungsten metallic film or bismuth telluride thin film.

5. the nanometer THz wave oscillator array according to claim 1 based on antiferromagnetic materials, which is characterized in that The antiferromagnet film layer with a thickness of 1nm~2 μm, the non magnetic heavy metal film layer with a thickness of 1nm~50nm.

6. the preparation method of the nanometer THz wave oscillator array based on antiferromagnetic materials, which is characterized in that including following Step:

Step 1 successively grows antiferromagnet film layer and non magnetic heavy metal film layer on substrate, obtains double-layer film structure；

Step 2 forms the micro-nano figure of oscillator array to bilayer film progress lithography and etching using microelectronics photoetching process Shape；

Step 3, using thin film deposition processes, the conductive membrane layer of nano thickness is grown on obtained micro-nano graph；

Step 4, using microelectronics photoetching process, lithography and etching is carried out to obtained conductive membrane layer, it is multiple to obtain connecting The conductive electrode of array element completes the preparation of the THz wave oscillator array.

Technical field

The invention belongs to microwave electronics technical fields, and in particular to a kind of nanometer terahertz based on antiferromagnetic materials Hereby wave oscillator array and preparation method.

Background technique

In present mobile communication, commercial microwave source oscillator mainly has Voltage Controlled LC Oscillator and crystal oscillator at present Deng.The circuit design of commercial Voltage Controlled LC Oscillator is flexible, and cost is relatively low, is easy to do to sinewave output and adjustable frequency output, but Be this oscillator volume it is big (micron dimension), lower (such as GPS:1.6GHZ of frequency；GSM:850MHZ；WCDMA:2GHZ), And frequency-tuning range is small (< 20%).Although another common quartz oscillator output frequency precision is higher, frequency It is single not to be adjustable.

Currently, also it is proposed that the spinning microwave oscillator based on spin-torque effect, basic structure are by ferromagnetic The sandwich structure that film (FM1)/nonmagnetic film (NM)/ferromagnetic thin film (FM2) is constituted, is worn by the electronics of FM1 layers of spin polarization NM layers are crossed, the effect of a torque can be generated to the magnetic moment in thin magnetic film FM2.But it is by neighboring magnetic moments damping action It restricts, during realizing electric current excitation magnetic moment oscillation, resonant frequency can only achieve microwave frequency band, and need higher electric current Density not only increases energy consumption, while the thermal noise generated influences output microwave signal quality.

Therefore, miniaturization, collection with the rapid development of mobile communication and satellite communication, to frequency electromagnetic waves oscillating device Cheng Hua, low-power consumption and high frequency it is adjustable require it is more more and more urgent.

Summary of the invention

It is an object of the present invention to be proposed a kind of of simple structure and low cost, easy for defect existing for background technique The nanometer THz wave oscillator array and preparation method based on antiferromagnetic materials integrated with CMOS technology.

To achieve the above object, The technical solution adopted by the invention is as follows:

Nanometer THz wave oscillator array based on antiferromagnetic materials, which is characterized in that the nanometer THz wave Oscillator array is the array structure of multiple unit components composition, and the unit component includes non magnetic heavy metal film layer and position Antiferromagnet film layer on non magnetic heavy metal film layer, multiple unit components are by being located at non magnetic heavy metal film layer The electrode of lower surface is connected.

Further, the array structure is rectangular array, triangular array or honey-comb shape array etc..

Further, the antiferromagnet film layer is exhausted for nickel oxide (NiO) anti-ferromagnetism arranged with magnetic moment opposite direction Edge body thin film or transition metal alloy FeMn, InMn anti-ferromagnetic thin films or bismuth ferrite (BiFeO₃) etc..

Further, the non magnetic heavy metal film layer is metal and its alloy with strong Quantum geometrical phase intensity Film, specially platinum (Pt) metallic film, tantalum (Ta) metallic film, tungsten (W) metallic film or topological insulator bismuth telluride (Bi₂Te₃) film etc..

Further, the antiferromagnet film layer with a thickness of 1nm~2 μm, the thickness of the non magnetic heavy metal film layer Degree is 1nm~50nm.

The preparation method of nanometer THz wave oscillator array based on antiferromagnetic materials, which is characterized in that including with Lower step:

Step 1 successively grows antiferromagnet film layer and non magnetic heavy metal film layer on substrate, obtains bilayer film knot Structure；

Step 2 forms the micro- of oscillator array to bilayer film progress lithography and etching using microelectronics photoetching process Receive figure；

Step 3, using thin film deposition processes, the conductive membrane layer of nano thickness is grown on obtained micro-nano graph；

Step 4, using microelectronics photoetching process, lithography and etching is carried out to obtained conductive membrane layer, to be connected The conductive electrode of multiple array elements completes the preparation of the THz wave oscillator array.

Further, the detailed process of non magnetic heavy metal film layer is grown on antiferromagnet film layer are as follows: 10^-5Pa amount Grade vacuum environment under, vacuum chamber is passed through with the argon flow of 5~80SCCM, after stable gas pressure, back end vacuum degree be 0.1~ 0.8Pa；Under the air pressure environment of 0.1~0.8Pa, magnetron sputtering power supply is opened, a huge sum of money is carried out with the dc power of 10~100W Belong to the sputtering of target；The baffle of heavy metal target is opened, at the uniform velocity substrate of the rotation with antiferromagnet film, reaches the growth of setting After time, the baffle of shielding power supply and heavy metal target is closed, antiferromagnet film layer is made and non magnetic heavy metal film layer is different Matter structure.

Nanometer THz wave oscillator array provided by the invention based on antiferromagnetic materials passes through conductive electricity in electric current When pole is flowed through in the plane of the non magnetic heavy metal film layer of nanoscale, by with the non magnetic of high-spin rail interaction Spin polarized charge non-in plane circulation is changed to pure spin by the asymmetric electron scattering in heavy metal film, logic gates Stream, generated spin current can apply spin transfer torque effect to the Nai Er magnetic moment of antiferromagnet film layer reversed arrangement, make It generates reversed chiral Spin precession, when more than certain critical current, spin transfer torque can be completely counterbalanced by magnetic moment into Dynamic damping, and then export THz wave oscillator signal.

Wherein, two magnetic moment vector differently-s oriented directivity of the antiferromagnet film layer are opposite and of different sizes, compared to tradition Magnetic moment ordered arrangement magnetic material, magnetic moment reversed arrangement antiferromagnetic materials neighboring magnetic moments spin cancels out each other, macroscopic view On show as paramagnetism, under identical driving current density, magnetic moment can quickly be overturn, and obtain bigger THz wave output Frequency, and required critical electric current value is smaller.

After above-mentioned technical proposal, the invention has the benefit that

Nanometer THz wave oscillator array provided by the invention based on antiferromagnetic materials, flows through nanoscale in electric current When in the plane of non magnetic heavy metal film layer, by the non magnetic heavy metal film with high-spin rail interaction Asymmetric electron scattering, logic gates by spin polarized charge non-in plane circulation be changed to pure spin current, it is generated Spin current can apply spin transfer torque effect to the Nai Er magnetic moment of antiferromagnet film layer reversed arrangement, generate it reversely Chiral Spin precession, when more than certain critical current, spin transfer torque can be completely counterbalanced by magnetic moment precession damping, and then defeated THz wave oscillator signal out.The present invention is based on the nanometer THz wave oscillator arrays of antiferromagnetic materials, are led by adjusting The current strength that electrode flows through can realize the high frequency THz wave output of different capacity, and output terahertz wave signal performance is good It is good, and structure is simple, it is low in energy consumption, it is easily integrated with CMOS.

Detailed description of the invention

Fig. 1 is the schematic diagram of the nanometer THz wave oscillator array provided by the invention based on antiferromagnetic materials；

Fig. 2 is the structural representation of the nanometer THz wave oscillator array provided by the invention based on antiferromagnetic materials Figure；

Fig. 3 is the preparation method stream of the nanometer THz wave oscillator array provided by the invention based on antiferromagnetic materials Cheng Tu.

Specific embodiment

Below with reference to specific embodiment, the present invention is further described.But the purposes and mesh of these exemplary embodiments Be only used to enumerate the present invention, any type of any restriction not is constituted to real protection scope of the invention, it is more non-to incite somebody to action this The protection scope of invention is confined to this.

Nanometer THz wave oscillator array based on antiferromagnetic materials, as shown in Fig. 2, the nanometer THz wave shakes The array structure that device array is multiple unit components composition is swung, the unit component includes by being staggered with magnetic moment is antiparallel Antiferromagnet film layer and non magnetic heavy metal film layer composition heterojunction structure, multiple unit components pass through be located at it is non magnetic heavy The conductive electrode of metal film layer lower surface is connected.

Wherein, the array structure is rectangular array, triangular array or honey-comb shape array etc..

Nanometer THz wave oscillator array provided by the invention based on antiferromagnetic materials passes through conductive electricity in electric current When pole is flowed through in the plane of the non magnetic heavy metal film layer of nanoscale, by with the non magnetic of high-spin rail interaction Spin polarized charge non-in plane circulation is changed to pure spin by the asymmetric electron scattering in heavy metal film, logic gates Stream, generated spin current can apply spin transfer torque effect to the Nai Er magnetic moment of antiferromagnet film layer reversed arrangement, make It generates reversed chiral Spin precession, when more than certain critical current, spin transfer torque can be completely counterbalanced by magnetic moment into Dynamic damping, and then export THz wave oscillator signal.