阅读说明：本技术 集成电路构造及在一对结构之间横向形成竖向延伸的导体的方法 (Integrated circuitry construction and the method that vertically extending conductor is transversely formed between a pair of of structure ) 是由 S·博尔萨里 于 2017-11-03 设计创作，主要内容包括：一种在一对结构之间横向形成竖向延伸的导体的方法包括：形成一对结构,所述对结构个别地包括竖向延伸的导电通路及电耦合到所述导电通路且横越于所述导电通路上方的导电线。在垂直横截面中,所述导电线及所述导电通路分别具有相对侧。在所述垂直横截面中沿着所述导电通路及所述导电线的所述相对侧形成竖向延伸的绝缘材料。所述形成所述绝缘材料包括：在所述垂直横截面中从所述导电通路及所述导电线的所述相对侧横向向外形成横向内绝缘体材料,所述横向内绝缘体材料包括硅、氧及碳。在所述垂直横截面中从所述横向内绝缘体材料的相对侧横向向外形成横向中间绝缘体材料,所述横向中间绝缘体材料包括硅及氧。所述横向中间绝缘体材料包括比所述横向内绝缘体材料更少的碳(如果有的话)。在所述垂直横截面中从所述横向中间绝缘体材料的相对侧横向向外形成横向外绝缘体材料,所述横向外绝缘体材料包括硅、氧及碳。所述横向外绝缘体材料包括比所述横向内绝缘体材料更多的碳。在所述垂直横截面中在所述绝缘材料之间且沿着所述绝缘材料横向形成竖向延伸的导体材料。本发明还揭示包含独立于制作方法的结构的额外方法方面。(A kind of method being transversely formed vertically extending conductor between a pair of of structure includes: to form a pair of of structure, described individually to include vertically extending conductive path to structure and be electrically coupled to the conductive path and cross the conductor wire above the conductive path.In vertical cross-section, the conductor wire and the conductive path are respectively provided with opposite side.Vertically extending insulating materials is formed along the opposite side of the conductive path and the conductor wire in the vertical cross-section.The formation insulating materials includes: laterally outward to form lateral interior insulation body material from the opposite side of the conductive path and the conductor wire in the vertical cross-section, and the transverse direction interior insulation body material includes silicon, oxygen and carbon.Lateral intermediate insulator material is laterally outward formed from the opposite side of the lateral interior insulation body material in the vertical cross-section, the transverse direction intermediate insulator material includes silicon and oxygen.The transverse direction intermediate insulator material includes carbon (if any) more less than the transverse direction interior insulation body material.Insulating material lateral out is laterally outward formed from the opposite side of the lateral intermediate insulator material in the vertical cross-section, the insulating material lateral out includes silicon, oxygen and carbon.The insulating material lateral out includes carbon more more than the transverse direction interior insulation body material.Vertically extending conductor material is being transversely formed in the vertical cross-section between the insulating materials and along the insulating materials.In terms of the present invention is also disclosed comprising the additional method independently of the structure of production method.)

1. a kind of method for being transversely formed vertically extending conductor between a pair of of structure comprising:

Form a pair of of structure, it is described individually to include vertically extending conductive path to structure and be electrically coupled to the conductive path And the conductor wire above the conductive path is crossed, and in vertical cross-section, the conductor wire and conductive path difference With opposite side；

It is formed in the vertical cross-section along the opposite side of the conductive path and the conductor wire vertically extending Insulating materials, the formation insulating materials include:

Transverse direction is laterally outward formed from the opposite side of the conductive path and the conductor wire in the vertical cross-section Interior insulation body material, the transverse direction interior insulation body material includes silicon, oxygen and carbon；

Lateral intermediate insulation is laterally outward formed from the opposite side of the lateral interior insulation body material in the vertical cross-section Body material, the transverse direction intermediate insulator material includes silicon and oxygen；The transverse direction intermediate insulator material includes than the transverse direction The less carbon of interior insulation body material (if any)；And

Lateral external insulation is laterally outward formed from the opposite side of the lateral intermediate insulator material in the vertical cross-section Body material, the insulating material lateral out include silicon, oxygen and carbon；The insulating material lateral out includes than in the transverse direction The more carbon of insulating material；And

It is vertically extending being transversely formed in the vertical cross-section between the insulating materials and along the insulating materials Conductor material.

2. according to the method described in claim 1, wherein the lateral intermediate insulator material is carbon-free.

3. according to the method described in claim 1, wherein the lateral intermediate insulator material includes carbon.

4. according to the method described in claim 3, wherein the lateral intermediate insulator material includes at least 1.0 carbon atom percentages Than.

5. according to the method described in claim 1, wherein the lateral interior insulation body material includes being greater than 4.0 atomic percent carbons And less than 15.0 atomic percent carbons, the transverse direction intermediate insulator material includes being no more than 4.0 atomic percent carbons, and described Insulating material includes at least 15.0 atomic percent carbons lateral out.

6. according to the method described in claim 5, wherein the lateral intermediate insulator material includes carbon.

7. according to the method described in claim 5, wherein the insulating material lateral out includes being no more than 30 carbon atom percentages Than.

8. according to the method described in claim 7, wherein the insulating material lateral out includes being no more than 20 carbon atom percentages Than.

9. according to the method described in claim 1, wherein the lateral interior insulation body material has greater than 4.2 and less than 4.5 K, the transverse direction intermediate insulator material has the k no more than 4.1, and the insulating material lateral out is at least 4.5 k。

10. according to the method described in claim 1, comprising: including forming the insulation material on the substrate to structure Material；The formation insulating materials includes: to sequentially form at least described lateral intermediate insulator material in situ in settling chamber And the insulating material lateral out, and initially form the lateral intermediate insulator material to described in initially forming lateral out Between insulating material the substrate is not removed from the settling chamber.

11. according to the method described in claim 1, comprising: directly abutting the lateral intermediate insulator material and forming institute State insulating material lateral out.

12. according to the method described in claim 1, comprising: directly abutting the lateral interior insulation body material and being formed described Lateral intermediate insulator material.

13. according to the method for claim 12 comprising: it directly abuts the lateral intermediate insulator material and forms institute State insulating material lateral out.

14. according to the method described in claim 1, comprising: reducing the lateral outer insulator before forming conductive material The transverse gage of material.

15. according to the method described in claim 1, comprising: removing laterally in the transverse direction between structure Between insulating material to form a pair of of void space, finished circuit construction in, it is described to void space individually laterally between Between the transverse direction interior insulation body material and the insulating material lateral out.

16. according to the method for claim 15, wherein at least most of removal betides to form the conductor material Later.

17. according to the method described in claim 1, comprising: the lateral intermediate insulator material is made to stay in finished circuit structure In making.

18. according to the method described in claim 1, the lateral interior insulation body material being wherein at least initially formed and the cross Each of outside insulating material is substantially made of silicon, oxygen, carbon.

19. a kind of integrated circuitry construction comprising:

A pair of of structure individually includes vertically extending conductive path and is electrically coupled to the conductive path and crosses in described Conductor wire above conductive path, in vertical cross-section, the conductor wire and the conductive path are respectively provided with opposite side；

Vertically extending insulating materials is the institute along the conductive path and the conductor wire in the vertical cross-section Opposite side is stated, the insulating materials includes:

Lateral interior insulation body material comprising silicon, oxygen and carbon, it is described transverse direction interior insulation body material in the vertical cross-section from The opposite side of the conductive path and the conductor wire is laterally outward；

Lateral intermediate insulator material comprising silicon and oxygen, the transverse direction intermediate insulator material is in the vertical cross-section Laterally outward from the opposite side of the lateral interior insulation body material；The transverse direction intermediate insulator material includes than in the transverse direction The less carbon of insulating material (if any)；And

Insulating material lateral out comprising silicon, oxygen and carbon, the insulating material lateral out in the vertical cross-section from Laterally outward, the insulating material lateral out includes more exhausted than in the transverse direction for the opposite side of the transverse direction intermediate insulator material The more carbon of edge body material；And

Vertically extending conductor material, in the vertical cross-section laterally between the insulating materials and along described Insulating materials.

20. a kind of integrated circuitry construction comprising:

A pair of of structure individually includes vertically extending conductive path and is electrically coupled to the conductive path and crosses in described Conductor wire above conductive path, in vertical cross-section, the conductor wire and the conductive path are respectively provided with opposite side；

Vertically extending insulating materials is the institute along the conductive path and the conductor wire in the vertical cross-section Opposite side is stated, the insulating materials includes:

Lateral interior insulation body material comprising silicon, oxygen and carbon, it is described transverse direction interior insulation body material in the vertical cross-section from The opposite side of the conductive path and the conductor wire is laterally outward；

Insulating material lateral out comprising silicon, oxygen and carbon, the insulating material lateral out in the vertical cross-section from Laterally outward, the insulating material lateral out includes than the lateral interior insulation for the opposite side of the transverse direction interior insulation body material The more carbon of body material；And

Void space, laterally between the perpendicular of at least most of lateral interior insulation body material in the vertical cross-section To between thickness and the vertical thickness of the insulating material lateral out, and along at least most of lateral interior insulation body The vertical thickness of the vertical thickness of material and the insulating material lateral out is vertically extending；And

Vertically extending conductor material, in the vertical cross-section laterally between the insulating materials and along described Insulating materials.

21. a kind of integrated circuitry construction comprising:

Conductor wire extends above multiple circuit elements, and the conductor wire includes side surface；

Insulation system, along the side surface of the conductor wire；

Wherein the insulation system includes first insulator material and second insulator material, the first insulator material between Between the side surface of the conductor wire and the second insulator material；

Wherein the first insulator material includes silicon, oxygen and carbon；And

Wherein the second insulator material includes silicon, oxygen and carbon.

22. the construction according to 21, wherein the insulation system is in the first insulator material and the second insulator It further comprise void space between material.

23. construction according to claim 22, wherein the second insulator material includes than the first insulator material Expect more carbon.

24. construction according to claim 22 further comprises multiple first conductive paths, first conductive path Each of associated one to be electrically coupled in the circuit element is downwardly projected from the conductor wire.

25. construction according to claim 24, wherein the insulation system extends downwards, to reach described first conductive logical A part of the side on each of road.

26. construction according to claim 22 further comprises multiple second conductive paths, the multiple second is conductive Each of access is electrically coupled to the correspondence one in the circuit element；And

Wherein the insulation system is between each of described second conductive path between the conductor wire.

27. construction according to claim 23 further comprises that multiple first conductive paths and multiple second conductions are logical Road；

Wherein each of described first conductive path is downwardly projected from the conductor wire, and

Wherein each of described first conductive path and each of the multiple second conductive path are electrically coupled to institute State the associated one in circuit element.

28. construction according to claim 27 further comprises multiple capacitors, each of described capacitor electricity The associated one being coupled in the multiple second conductive path.

29. construction according to claim 21, wherein the insulation system further comprises between the first insulator Third insulating material between material and the second insulator material；

Wherein the third insulating material includes silicon and oxygen, and the third insulating material includes than the first insulator The less carbon of material (if any)；And

Wherein the second insulator material includes carbon more more than the first insulator material.

30. construction according to claim 29 further comprises multiple first conductive paths, first conductive path Each of associated one to be electrically coupled in the circuit element is downwardly projected from the conductor wire.

31. construction according to claim 30, wherein the insulation system extends downwards, to reach described first conductive logical A part of the side on each of road.

32. construction according to claim 29 further comprises multiple second conductive paths, the multiple second is conductive Each of access is electrically coupled to the correspondence one in the circuit element, and

Wherein the insulation system is between each of described second conductive path between the conductor wire.

33. construction according to claim 29 further comprises that multiple first conductive paths and multiple second conductions are logical Road,

Wherein each of described first conductive path is downwardly projected from the conductor wire, and

Wherein each of described first conductive path and each of the multiple second conductive path are electrically coupled to institute State the associated one in circuit element.

34. construction according to claim 33 further comprises multiple capacitors, each of described capacitor electricity The associated one being coupled in the multiple second conductive path.

35. construction according to claim 22, further comprising:

Additional conductive line is arranged essentially parallel to above the multiple circuit element the conductor wire and is extended, described additional Conductor wire includes additional side surface；

Extra insulation structure, along the additional side surface of the additional conductive line；

Wherein the extra insulation structure includes third insulating material and the 4th insulating material, the third insulating material Between the additional side surface and the 4th insulating material of the additional conductive line；

Wherein the third insulating material includes silicon, oxygen and carbon；

Wherein the 4th insulating material includes silicon, oxygen and carbon；4th insulating material includes insulating than the third The more carbon of body material；And

Wherein the extra insulation structure is further wrapped between the third insulating material and the 4th insulating material Include additional void volume space.

36. construction according to claim 35 further comprises multiple first conductive paths, multiple second conductive paths And multiple third conductive paths；

Wherein each of described first conductive path is between the insulation system and the extra insulation structure, and electricity The associated one being coupled in the multiple circuit element；

Wherein each of described second conductive path is downwardly projected to be electrically coupled to the multiple circuit from the conductor wire Associated one in element；And

Wherein each of described third conductive path is downwardly projected the multiple to be electrically coupled to from the additional conductive line Associated one in circuit element.

37. construction according to claim 36, wherein the insulation system is in the multiple first conductive path Between each of each and the multiple second conductive path；And

Wherein the extra insulation structure is conductive with the multiple third between each of the multiple first conductive path Between each of access.

38. construction according to claim 29, further comprising:

Additional conductive line is arranged essentially parallel to above the multiple circuit element the conductor wire and is extended, described additional Conductor wire includes additional side surface；

Extra insulation structure, along the additional side surface of the additional conductive line；

Wherein the extra insulation structure includes the 4th insulating material and the 5th insulating material, the 4th insulating material Between the additional side surface and the 5th insulating material of the additional conductive line；

Wherein the 4th insulating material includes silicon, oxygen and carbon；

Wherein the 5th insulating material includes silicon, oxygen and carbon；5th insulating material includes than the 4th insulation The more carbon of body material；And

Wherein the insulation system further comprises between the 4th insulating material and the 5th insulating material Six insulating materials, the 6th insulating material include carbon (if any) more less than the 4th insulating material.

39. the construction according to claim 38 further comprises multiple first conductive paths, multiple second conductive paths And multiple third conductive paths；

Wherein each of described first conductive path is between the insulation system and the extra insulation structure, and electricity The associated one being coupled in the multiple circuit element；

Wherein each of described second conductive path is downwardly projected to be electrically coupled to the multiple circuit from the conductor wire Associated one in element；And

Wherein each of described third conductive path is downwardly projected the multiple to be electrically coupled to from the additional conductive line Associated one in circuit element.

40. construction according to claim 39, wherein the insulation system is in the multiple first conductive path Between each of each and the multiple second conductive path；And

Wherein the extra insulation structure is conductive with the multiple third between each of the multiple first conductive path Between each of access.

Technical field

Embodiment disclosed herein is related to integrated circuitry construction and is transversely formed between a pair of of structure vertically extending Conductor method.

Background technique

Memory is a type of integrated circuit, and in computer systems for storing data.Memory can make In one or more arrays of Individual memory cell.Digital line can be used in memory cell, and (it is also referred to as bit line, data Line, sense wire) and access line (it is also referred to as wordline) and be written or read.Sense wire can be along the multiple row and storage of array Device unit conductively interconnects, and access line can with memory cell conducts be interconnected along the multirow of array.Each memory list Member can uniquely be addressed by the combination of sense wire and access line.

Memory cell can be volatibility, half volatibility or non-volatile.Nonvolatile memery unit can be Storing data reaches the extended time cycle in the case where there is no electric power.Nonvolatile memory is routinely appointed as having at least The memory of about 10 years retention times.Volatile memory dissipates and therefore by refresh/rewrite to maintain data to store.Easily The property lost memory can have several milliseconds or less retention time.Anyway, memory cell is configured and at least two The optional state of difference retains or stores memory.In binary system, the state is considered as " 0 " or " 1 ".In other systems In system, at least some Individual memory cells can be configured to store the information of more than two level or state.

A type of memory cell has at least one transistor and at least one capacitor.In this some class formation In, a conductive path extends downwardly into a regions and source/drain (for example, circuit node) of transistor from sense wire.Separately Outside, another conductive path can extend downwardly into transistor laterally adjacent to a conductive path, and from the memory node of capacitor Another regions and source/drain.Unfortunately, parasitic capacitance is laterally present between a conductive path and another conductive path.This Parasitic capacitance can negatively affect circuit performance.The parasitic capacitance laterally between conductive path in other circuits can not also Circuit performance is influenced sharply.

Detailed description of the invention

Fig. 1 be embodiment according to the present invention during substrate fragment diagrammatic top cross-sectional view, and be across Line 1-1 in Fig. 2 and intercept.

Fig. 2 is the sectional view of the line 2-2 interception in Fig. 1.

Fig. 3 is the sectional view of the line 3-3 interception in Fig. 2.

Fig. 4 is the sectional view of the line 4-4 interception in Fig. 1 to 3.

Fig. 5 is the sectional view of the line 5-5 interception in Fig. 1 to 3.

Fig. 6 is the view of the substrate as show in Figure 2 of the processing step after the processing step shown by Fig. 2 Figure.

Fig. 7 is the view of Fig. 6 substrate of the processing step after the processing step shown by Fig. 6.

Fig. 8 is the view of Fig. 7 substrate of the processing step after the processing step shown by Fig. 7.

Fig. 9 is the view of Fig. 8 substrate of the processing step after the processing step shown by Fig. 8, and is across figure What the line 9-9 in 10 was intercepted.

Figure 10 is the sectional view of the line 10-10 interception in Fig. 9.

Figure 11 is the view of Figure 10 substrate of the processing step after the processing step shown by Figure 10, and be across What the line 11-11 in Figure 12 was intercepted.

Figure 12 is the sectional view of the line 12-12 interception in Figure 11.

Figure 13 is the view of Figure 12 substrate of the processing step after the processing step shown by Figure 12, or can be considered By the alternate embodiment of Figure 12 embodiment shown.

Specific embodiment

The embodiment of the present invention include the method that vertically extending conductor is transversely formed between a pair of of structure and independently of The integrated circuitry construction of manufacturing method.Embodiment of the method is described to 13 referring initially to Fig. 1.

Referring to figs. 1 to 5, the exemplary segment of substrat structure 8 includes array or array area 10, in one embodiment, institute It states array or array area may include the memory cell of production relative to base substrate 11.Substrate 11 may include electric conductivity/lead Body/conductive material (that is, herein, electric material), semiconduction/semiconductor/semiconductive material and insulating properties/insulator/insulation Any one or more in material (that is, herein, electric material).Vertically form a variety of materials above base substrate 11.Material Material can be at beside the discribed material of Fig. 1 to 5, from Fig. 1 to 5, discribed material is vertical inwardly or discribed from Fig. 1 to 5 Material is vertically outside.For example, other components through partially or completely making of integrated circuit may be disposed in base substrate Above 11, around base substrate 11 or the somewhere in base substrate 11.For operating the control of the component in memory array Part and/or other peripheral circuits can also be produced, and may or may not be completely or partially located in memory array or subarray. In addition, multiple subarrays can also make and operate independently, in succession or in other ways relative to each other.Institute in such document It uses, " subarray " can also be considered as array.

Base substrate 11 include semiconductor material 12 (for example, monocrystalline silicon through suitably and differently adulterating), groove every From region 14 (for example, silicon nitride and/or doped or undoped silica) and effective area region 16, effective area area Domain 16 includes the semiconductor material 12 through suitably adulterating.In one embodiment and as will be shown, structure 8 will include individual packets Include the memory cell of field effect transistor 25 and capacitor (not showing in Fig. 1 to 5).However, such as will become apparent from from continuing to discuss, Type regardless of circuit and the integrated circuit structure independently of manufacturing method, embodiment according to the present invention cover other The production of memory cell and the production of conductive path.In described example, field effect transistor 25 is shown as in recessed The form of formula access device (RAD).Such concave type access device includes the access line construction 18 in embedment base substrate 11, and Access line construction include gate insulator 20 (e.g., including silica and/or silicon nitride, substantially by silica And/or silicon nitride composition, or be made of silica and/or silicon nitride) and conductive gate material 22 (e.g., including through conduction The semiconductor material and/or metal material of doping, substantially by conductively-doped semiconductor material and/or metal material group At, or be made of conductively-doped semiconductor material and/or metal material).18 top of access line construction shows insulator material Material 27 (e.g., including silicon nitride and/or doped or undoped silica, substantially by silicon nitride and/or it is doped or Undoped silica composition, or be made of silicon nitride and/or doped or undoped silica).Individual field-effects Transistor 25 includes a pair of of regions and source/drain from access line construction 18 laterally outward and above access line construction 18 24,26.When suitable voltage to be applied to the grid material 22 of access line construction 18, conducting channel is close to gate insulator 20 And be formed in semiconductor material 12, it enables current in individual effective area regions 16, below access line construction 18 It is flowed between a pair of of regions and source/drain 24 and 26.Therefore, in an example embodiment, each effective area region 16 is wrapped Include two field effect transistors 25 of respective Sharing Center's regions and source/drain 26.

Construction/configuration 28 has been made above base substrate 11.It is transversely formed between a pair of of immediate neighborhood structure 28 and vertically prolongs The production about this to structure 28 is continued to discuss in the method for the conductor stretched.Formed including vertically extending conductive path 30 and It is electrically coupled to conductive path 30 and crosses the discrete structure 28 of the conductor wire 32 above conductive path 30.In one embodiment And as demonstrated, individual conductive line 32 is electrically coupled directly to and directly abuts the top 37 of conductive path 30.In one embodiment In, conductor wire 32 includes the first conductive material 34, and conductive path 30 includes having with the composition of the first conductive material 34 not Second conductive material 36 of same composition.In one embodiment, the first conductive material 34 include metal material (for example, TiN、Ti、WN、WSi_xOne or more of Deng).In one embodiment, the second conductive material 36 includes conductively-doped half Conductor material (for example, polysilicon of phosphorus doping).In vertical cross-section (for example, the discribed cross section Fig. 2), conductor wire 32 And conductive path 30 is respectively provided with opposite side 35 and 33.Structure 28 is shown as including insulating materials 40,41 and 42, the insulation material Material can have identical or different composition (for example, silicon nitride and/or doped or undoped silica) relative to each other.

It is vertically extending respectively along the formation of the opposite side 35 and 33 of conductive path 30 and conductor wire 32 in vertical cross-section Insulating materials.This is shown as: from the opposite of the opposite side of conductive path 30 33 and conductor wire 32 in vertical cross-section Side 35 laterally outward forms lateral interior insulation body material 46, the transverse direction interior insulation body material include silicon, oxygen and carbon, substantially by Silicon, oxygen and carbon composition, or be made of silicon, oxygen and carbon.It is desirable that carbon is bonded to silicon, rather than exist as dopant is not bonded, And material 46 is formed including silicon oxide carbide, substantially by silicon oxide carbide, or is made of silicon oxide carbide.In one embodiment, horizontal Inside insulating material 46 includes greater than 4.0 atomic percent carbons and less than 15.0 atomic percent carbons.In one embodiment, Lateral interior insulation body material 46, which has, is greater than the 4.2 and k (dielectric constant) less than 4.5.The example of lateral interior insulation body material 46 Property is with a thickness of 10 angstroms to 30 angstroms.In one embodiment, structure 28 extends in the opening in base substrate 11 (Fig. 1 and 2), absolutely Edge body material 46 is at least partly open described in lining cutting, and insulating materials 56 (for example, silicon nitride) also is located in this opening.As institute It shows, lateral interior insulation body material 46 includes opposite side 47.

With reference to Fig. 6, laterally outward formed laterally in vertical cross-section from the opposite side 47 of lateral interior insulation body material 46 Intermediate insulator material 48, the transverse direction intermediate insulator material include silicon and oxygen (for example, silica), substantially by silicon and Oxygen (for example, silica) composition, or be made of silicon and oxygen (for example, silica).Lateral intermediate insulator material 48 includes Than the less carbon (if any) of lateral interior insulation body material 46.In one embodiment, lateral intermediate insulator material 48 It directly abuts lateral interior insulation body material 46 and is formed.Lateral intermediate insulator material 48 can be considered with opposite side 49.It is hanging down Insulating material 50 lateral out, institute have laterally outward been formed from the opposite side 49 of lateral intermediate insulator material 48 in straight cross section State insulating material lateral out include silicon, oxygen and carbon (for example, the silicon oxide carbide for being bonded carbon and silicon), substantially by silicon, oxygen and Carbon (for example, the silicon oxide carbide for being bonded carbon and silicon) composition, or by silicon, oxygen and carbon (for example, the oxidation of coal for being bonded carbon and silicon Silicon) composition.Insulating material 50 includes than the more carbon of lateral interior insulation body material 46 lateral out.In one embodiment, horizontal Outside insulating material 50 directly abuts lateral intermediate insulator material 48 and is formed.Anyway, and in one embodiment, Vertically extending insulating materials 44 has been formed along the opposite side 35 of conductor wire 32 and along the opposite side of conductive path 30 33.

In one embodiment, lateral intermediate insulator material 48 is carbon-free, and in another embodiment includes carbon.It is literary herein Shelves in, " carbon-free " mean from 0 atomic percent carbon to be no more than 0.01 atomic percent carbon, and the material including carbon have be more than 0.01 atomic percent carbon.In one embodiment, lateral intermediate insulator material 48 includes at least 1.0 atomic percent carbons, It and in one embodiment include being no more than 4.0 atomic percent carbons.In one embodiment, lateral intermediate insulator material 48 With the k for being not more than 4.1.The example thicknesses of lateral intermediate insulator material 48 are 30 angstroms to 50 angstroms.

In one embodiment, insulating material 50 includes at least 15.0 atomic percent carbons lateral out, is implemented at one It including being no more than 30 atomic percent carbons in example, and in one embodiment include being no more than 20 atomic percent carbons.At one In embodiment, insulating material 50 has at least 4.5 k lateral out, in one embodiment with the k no more than 6.5, and There is the k no more than 5.3 in one embodiment.

Horizontal between vertically extending insulating materials 44 and along vertically extending insulating materials 44 in vertical cross-section The conductor material vertically extending to formation.The example embodiments done so are described with reference next to Fig. 7 to 13.

With reference to Fig. 7, and in one embodiment, insulating material 52 is formed above insulating materials 44 with filling and mistake The lateral remaining void space between structure 28 of filling.Exemplary materials and only by way of example be spin-on dielectric.

With reference to Fig. 8,52 densification of insulating material is made, in one embodiment, this can reduce insulating material lateral out 50 transverse gage.For example, this, which can lead to, displaces carbon into insulating material 52 from insulating material 50, whereby absolutely The transverse direction and vertical most external of edge body material 50 are partially converted into silica.

With reference to Fig. 9 and 10, and in one embodiment, insulating material 52 is back planarized and patterned, with shape At 53 (Fig. 9) of opening, while regions and source/drain 24 being made to be covered with insulating material 52.

With reference to Figure 11 and 12, and in one embodiment, dielectric substance 72 has been formed in opening 53 (for example, nitridation Silicon), and removed 52 (not shown) of insulating material.Then (or earlier), insulating materials 44 has been subjected to being suitble to etching with exposure Regions and source/drain 24.Then it has been transversely formed in vertical cross-section between insulating materials 44 and along insulating materials 44 Vertically extending conductor material 54 (for example, replacing the insulating material 52 removed).In one embodiment, such vertically extending Conductor material include metal material.In one embodiment, such vertically extending conductor material include directly abut source electrode/ The conductively-doped semiconductor material (for example, polysilicon of phosphorus doping) of drain region 24.

In one embodiment, insulating materials is carried out on the substrate (for example, construction 8 in Fig. 1 to 5) for including structure 28 The formation of 44 (for example, Fig. 6).In this embodiment, formed insulating materials 44 include: in settling chamber's (not shown) it is in situ sequentially At least lateral intermediate insulator material 48 and lateral out insulating material 50 are formed, and is initially forming lateral intermediate insulator material Material 48 is to initially forming between insulating material 50 lateral out and ideally in all lateral outer insulator materials just deposited of deposition Before material 50 substrate is not removed from settling chamber.In such embodiment, also cross can be formed in situ together with material 48 and 50 46 (not shown) of inside insulating material.For example, all material 46,48 and 50 can be deposited jointly to fill substrate Opening (for example, not deposition of insulative material 56) in substrate 11 then carries out dry etching to material 46,48 and 50 to remove this A little materials are in order to avoid covering regions and source/drain 24.Anyway, exemplary deposition tool is remote plasma chemical vapor deposition Product reactor/tool is (for example, can be from Fan Lin group (the LAM Research in California Freemont city Corporation the Striker) bought), operating condition is 0.5 support to 30.0 support chamber pressures, 150 DEG C to 450 DEG C pedestal temperature Degree, 2,000 watts to 5,000 watts electric power, suitable siliceous, oxygen and carbon matrix precursor stream, 200sccm in 5sccm to 25sccm To the H of 1,000sccm₂The O of stream and 1.5sccm to 50sccm₂Stream is (for example, wherein O₂Stream and H₂The amount of stream is for controlling equivalent layer In carbon amounts).

Lateral intermediate insulator material 48 can not be left one of finished circuit construction fully, partially or completely Point.In one embodiment, and as demonstrated in Figure 13, the lateral intermediate insulation laterally between multipair structure 28 has been removed 48 (not shown) of body material with formed individually laterally between lateral interior insulation body material 46 and insulating material 50 lateral out it Between a pair of of void space 75 (for example, the air gap).This removing action can be betided before forming conductor material 54 or be formed After conductor material 54.In one embodiment, at least most of (that is, being more than half), which removes, to be betided to form conductor material 54 Later.As described in this article for removing SiO₂Or the exemplary technique of the silicon oxide material 48 of low carbon content is to use Diluted HF is (for example, H₂The volume ratio of O:HF is 100:1 to 1,000:1) it is etched.In one embodiment, laterally intermediate Insulating material 48 (that is, at least some) is retained in finished circuit construction.In one embodiment, in vertical cross-section, Void space 75 is individually laterally between the vertical thickness and lateral external insulation of at least most of lateral interior insulation body material 46 Between the vertical thickness of body material 50, and along the vertical thickness of at least most of lateral interior insulation body material 46 and lateral out The vertical thickness of insulating material 50 is vertically extending.In one embodiment and as demonstrated, structure 8 may include individually including The memory cell of field effect transistor 25 (Fig. 3) and capacitor 80 (Figure 12 and 13).

The embodiment of the present invention also includes the integrated circuitry construction independently of manufacturing method.However, in structure of the invention It can find in aspect above for any one of structure attribute described in embodiment of the method, and vice versa.In a reality It applies in example, a pair of of structure (for example, 28) individually includes vertically extending conductive path (for example, 30) and is electrically coupled to conductive logical Road and cross the conductor wire above conductive path (for example, 32).In vertical cross-section, conductor wire and conductive path have respectively There are opposite side (for example, respectively 35,33).In vertical cross-section, vertically extending insulating materials (for example, 44) is along leading The opposite side of electric wire and conductive path.Insulating materials includes in vertical cross-section from the opposite side of conductive path and conductor wire cross To outside lateral interior insulation body material (for example, 46), the transverse direction interior insulation body material includes silicon, oxygen and carbon.Including silicon and The lateral intermediate insulator material (for example, 48) of oxygen in vertical cross-section from the opposite side of lateral interior insulation body material (for example, 47) laterally outward.Lateral intermediate insulator material includes carbon (if any) more less than lateral interior insulation body material.Including The insulating material lateral out (for example, 50) of silicon, oxygen and carbon is in vertical cross-section from the opposite of lateral intermediate insulator material Side (for example, 49) is laterally outward.Insulating material includes carbon more more than lateral interior insulation body material lateral out.In vertical cross sectional In face, vertically extending conductor material (for example, 54) is laterally between insulating materials 44 and along insulating materials 44.

Can be used as herein with respect to other embodiments show and/or described in any other attribute or in terms of.

In one embodiment, a pair of of structure (for example, 28) individually includes vertically extending conductive path (for example, 30) And it is electrically coupled to conductive path and crosses the conductor wire above conductive path (for example, 32).In vertical cross-section, conductor wire And conductive path is respectively provided with opposite side (for example, respectively 35,33).In vertical cross-section, vertically extending insulating materials (for example, 44) are the opposite sides along conductor wire and conductive path.Insulating materials is included in vertical cross-section from conductive path And the lateral interior insulation body material (for example, 46) of the opposite side of conductor wire laterally outward, the transverse direction interior insulation body material include Silicon, oxygen and carbon.Insulating material lateral out (for example, 50) including silicon, oxygen and carbon is in vertical cross-section from lateral interior insulation The opposite side (for example, 47) of body material is laterally outward.Insulating material includes more more than lateral interior insulation body material lateral out Carbon.In vertical cross-section, void space (for example, 75) is laterally between the vertical of at least most of lateral interior insulation body material Between the vertical thickness of thickness and lateral out insulating material, and along the vertical of at least most of lateral interior insulation body material The vertical thickness of thickness and lateral out insulating material is vertically extending.In vertical cross-section, vertically extending conductor material (example Such as, 54) laterally between insulating materials 44 and along insulating materials 44.

Can be used as herein with respect to other embodiments show and/or described in any other attribute or in terms of.

In one embodiment, integrated circuitry construction includes the conductor wire extended above multiple circuit elements.It is described to lead Electric wire includes side surface.Insulation system along conductor wire side surface.Insulation system includes that first insulator material and second are exhausted Edge body material.First insulator material is between the side surface and second insulator material of conductor wire.First insulator material Including silicon, oxygen and carbon.Second insulator material includes silicon, oxygen and carbon.This embodiment may include that technical solution 22 herein arrives Any one of the subject matter of technical solution 40.In addition, can be used as shown and/or describing herein with respect to other embodiments Any other attribute or aspect.

In this document, unless otherwise directed, otherwise " vertical ", " higher ", " top ", " lower part ", " top ", " top On ", " bottom ", " top ", " lower section ", " following ", " beneath ", " upward " and it is " downward " be usually with reference to for vertical direction. "horizontal" refers to the general direction along main substrate surface, and can with during production the processed position of substrate it is related, and It is vertically to be generally normal to horizontal direction.In addition, as used herein, " vertical " and "horizontal" are substantially relative to each other Vertical direction and in three dimensions independently of the orientation of substrate.In addition, " vertically extending " and " vertically extending " refers to and water The direction of Heisei at least 45° angle.In addition, " vertically extending " and " vertically extending " relative to field effect transistor is to refer to In operation electric current flowed between regions and source/drain along transistor channel length orientation for.For bipolar junction Transistor, " vertically extending " and " vertically extending " are with reference to along electric current in operation flows between emitter-base bandgap grading and collector For the orientation of base length.

In addition, " directly exist ... top " needs at least some cross of two region/material/components relative to each other To overlapping (that is, horizontally).In addition, the use of not aforementioned " in ... top " for having " direct " is only needed in another region/material Certain a part of the region/material/component above material/component from another region/material/component it is vertical outward (that is, regardless of With the presence or absence of two region/any lateral overlaps of material/component).

Any one of material, region and structure described herein can be homogeneity or non-homogeneous, and anyway, Can such material on be continuous or discontinuous above any material covered.In addition, unless otherwise stated, otherwise can be used Any technology suitable or still leaved for development forms each material, and wherein atomic layer deposition, chemical vapor deposition, physical vapor are heavy Product, epitaxial growth, diffusing, doping and ion implantation are examples.

In addition, " thickness " itself (be not present aforementioned directivity adjective) be defined as from different components close to material or The closest surface of immediate area extends perpendicularly through the mean linear distance in given material or region.In addition, described herein A variety of materials or region can have substantial constant thickness or have variable thickness.If having variable thickness, thickness Refer to average thickness, unless otherwise directed, and due to thickness be it is variable, this material or region will have a certain minimum thick Degree and a certain maximum gauge.As used herein, what " different components " only needed two kinds of materials or region can be each other Part those of is directly abutted to be different in chemistry and/or physically (as an example it is assumed that these materials or region are not Homogeneity).If two kinds of materials or region be not directly against one another, " different components " only need described in two kinds Those parts hithermost each other in material or region are different in chemistry and/or physically (assuming that these materials or area Domain is not homogeneity).In this document, when at least a certain physics touching there are the material, region or structure relative to each other And when contact, a material, region or structure are " directly abutting " another one.In contrast, not aforementioned to have " direct " " in ... top ", " ... on ", " neighbouring ", " along " and " against " include " directly abutting " and wherein intermediate materials, area Domain or structure cause the material, region or structure relative to each other and the non-physical construction for touching contact.

Herein, if in the normal operation period, electric current can be constantly from a region/material/component flow to another One region/material/component, and subatomic just and/or when negative electrical charge is sufficiently generated, it is main by it is mobile it is subatomic just and/ Or negative electrical charge and carry out this, then region/material/component is " being electrically coupled " relative to each other.Another electronic building brick can be between area Between domain/material/component and it is electrically coupled to region/material/component.In contrast, when region/material/component is known as " directly electricity When coupling ", there is no central electron components (for example, there is no diodes, crystalline substance between region/material/component for being directly electrically coupled Body pipe, resistor, sensor, switch, fuse etc.).

In addition, " metal material " is metal element, two kinds or more than the mixture of two kinds of metal elements or alloy and any Any one of conductive metallic compound or combination.

In this document, selective etch or remove be wherein make a kind of material relative to another (in addition) described material with At least rate of 2.0:1 removed etching or removal.In addition, selectively growing or being formed selectively is to make a kind of material It with the rate growth of at least 2.0:1 or is formed up to first 100 angstroms at least growing or being formed relative to another (in addition) described material.

Conclusion

In some embodiments, a kind of method being transversely formed vertically extending conductor between a pair of of structure includes: shape Structure in a pair, it is described individually to include vertically extending conductive path to structure and be electrically coupled to the conductive path and cross Conductor wire above the conductive path.In vertical cross-section, the conductor wire and the conductive path are respectively provided with phase Opposite side.It is formed in the vertical cross-section along the opposite side of the conductive path and the conductor wire vertically extending Insulating materials.The formation insulating materials includes: in the vertical cross-section from the conductive path and the conduction The opposite side of line laterally outward forms lateral interior insulation body material, and the transverse direction interior insulation body material includes silicon, oxygen and carbon. Lateral intermediate insulator material is laterally outward formed from the opposite side of the lateral interior insulation body material in the vertical cross-section Material, the transverse direction intermediate insulator material includes silicon and oxygen.The transverse direction intermediate insulator material includes more exhausted than in the transverse direction The less carbon of edge body material (if any).From the opposite of the lateral intermediate insulator material in the vertical cross-section Side laterally outward forms insulating material lateral out, and the insulating material lateral out includes silicon, oxygen and carbon.It is described exhausted lateral out Edge body material includes carbon more more than the transverse direction interior insulation body material.In the vertical cross-section the insulating materials it Between and be transversely formed along the insulating materials vertically extending conductor material.

In some embodiments, a kind of integrated circuitry construction includes a pair of of structure, and described individually includes vertical to structure It the conductive path of extension and is electrically coupled to the conductive path and crosses the conductor wire above the conductive path.Vertical horizontal In section, the conductor wire and the conductive path are respectively provided with opposite side.In the vertical cross-section, vertically extending is exhausted Edge material is the opposite side along the conductive path and the conductor wire.The insulating materials is included in the vertical cross Lateral interior insulation body material in section from the opposite side of the conductive path and the conductor wire laterally outward, the cross Inside insulating material includes silicon, oxygen and carbon.Lateral intermediate insulator material including silicon and oxygen is in the vertical cross-section Laterally outward from the opposite side of the lateral interior insulation body material.The transverse direction intermediate insulator material includes than in the transverse direction The less carbon of insulating material (if any).Insulating material lateral out including silicon, oxygen and carbon is in the vertical cross sectional In face laterally outward from the opposite side of the lateral intermediate insulator material.The insulating material lateral out includes than the cross The more carbon of inside insulating material.In the vertical cross-section, vertically extending conductor material is laterally between the insulation Between material and along the insulating materials.

In some embodiments, a kind of integrated circuitry construction includes a pair of of structure, and described individually includes vertical to structure It the conductive path of extension and is electrically coupled to the conductive path and crosses the conductor wire above the conductive path.Vertical horizontal In section, the conductor wire and the conductive path are respectively provided with opposite side.In the vertical cross-section, vertically extending is exhausted Edge material is the opposite side along the conductive path and the conductor wire.The insulating materials is included in the vertical cross Lateral interior insulation body material in section from the opposite side of the conductive path and the conductor wire laterally outward, the cross Inside insulating material includes silicon, oxygen and carbon.Insulating material lateral out including silicon, oxygen and carbon is in the vertical cross-section Laterally outward from the opposite side of the lateral interior insulation body material.The insulating material lateral out includes more exhausted than in the transverse direction The more carbon of edge body material.In the vertical cross-section, void space is laterally exhausted in at least most of transverse direction Between the vertical thickness of edge body material and the vertical thickness of the insulating material lateral out, and along at least most of described The vertical thickness of the vertical thickness of lateral interior insulation body material and the insulating material lateral out is vertically extending.Described vertical In cross section, vertically extending conductor material is laterally between the insulating materials and along the insulating materials.

In some embodiments, a kind of integrated circuitry construction includes the conductor wire extended above multiple circuit elements.Institute Stating conductor wire includes side surface.Insulation system is the side surface along the conductor wire.The insulation system includes first Insulating material and second insulator material.The first insulator material between the conductor wire the side surface with it is described Between second insulator material.The first insulator material includes silicon, oxygen and carbon.The second insulator material include silicon, Oxygen and carbon.