阅读说明：本技术 一种横向高压功率半导体器件的槽型终端结构 (A kind of groove profile terminal structure of transverse direction high voltage power semiconductor device ) 是由 章文通 杨昆 何俊卿 王睿 张森 乔明 王卓 张波 李肇基 于 2019-09-05 设计创作，主要内容包括：本发明提供一种横向高压功率半导体器件的槽型终端结构,属于半导体功率器件技术领域。通过在横向高压功率半导体器件的曲率终端部分的N型轻掺杂漂移区内引入槽型介质条环,使得N型轻掺杂漂移区内的环型介质承担了主要耐压,这样就避免了由于漏端加高压所带来的源端PN结冶金界结面产生高电场峰值,进而造成器件耐压降低。由于介质槽的临界击穿电场远高于硅材料,所以本发明可以减小器件曲率终端的宽度,使电场线更加集中而不会提前击穿,这样就节约器件版图面积,并且与CMOS工艺相兼容,利用本发明可制作高压、高速、低导通损耗的横向高压功率器件。(The present invention provides a kind of groove profile terminal structure of lateral high voltage power semiconductor device, belongs to semiconductor power device technology field.By introducing groove profile medium strip ring in the N-type lightly doped drift zone of the curvature terminal part of lateral high voltage power semiconductor device, so that the ring-like medium in N-type lightly doped drift zone assumes responsibility for main pressure resistance, the brought source PN junction metallurgy circle junction generation high electric field peak value that adds high pressure due to drain terminal is avoided in this way, is in turn resulted in device and is reduced pressure.Since the critical breakdown electric field of media slot is much higher than silicon materials, so the present invention can reduce the width of device curvature terminal, concentrate electric field line more without puncturing in advance, thus saving components chip area, and it is mutually compatible with CMOS technology, using the present invention can make high pressure, high speed, low conduction loss lateral high voltage power device.)

1. a kind of groove profile terminal structure of transverse direction high voltage power device, including straight line junction termination structures and curvature junction termination structures；

The straight line junction termination structures include P type substrate (11), P-doped zone (7), N-type lightly doped drift zone (8), n-type doping Area (12), drain region N-type heavy doping contact zone (13), source region N-type heavy doping contact zone (2), source region p-type heavy doping contact zone (1), Gate oxide (4), first medium oxide layer (5), second medium oxide layer (9), polysilicon gate (3), polycrystalline silicon material (10) With metal material (6)；

P-doped zone (7) and N-type lightly doped drift zone (8) are located on P type substrate (11), and N-type lightly doped drift zone (8) is located at P The two sides of type doped region (7), and the side of P-doped zone (7) and N-type lightly doped drift zone (8) contacts with each other；Second medium oxygen Change layer (9) and polycrystalline silicon material (10) constitutes discontinuous longitudinal floating field plate, is evenly distributed in N-type lightly doped drift zone (8) in, and internal equipotential ring is formed by metal material (6), it is light that first medium oxide layer (5) and metal material (6) are located at N-type In the first part of doped drift region (8)；The upper layer of P-doped zone (7) has the source region N-type weight being connected with metallizing source Doping contact zone (2) and source region p-type heavy doping contact zone (1), source region N-type heavy doping contact zone (2) are located at source region p-type heavy doping Contact zone (1) two sides, and the side of source region N-type heavy doping contact zone (2) and source region p-type heavy doping contact zone (1) contacts with each other； Gate oxide (4) is located at P-doped zone (7), fractional source regions N-type heavy doping contact zone (2) and N-type lightly doped drift zone (8) On second part, polysilicon gate (3) is located on gate oxide (4)；

The curvature junction termination structures include P type substrate (11), P-doped zone (7), N-type lightly doped drift zone (8), n-type doping Area (12), drain region N-type heavy doping contact zone (13), source region N-type heavy doping contact zone (2), source region p-type heavy doping contact zone (1), Gate oxide (4), first medium oxide layer (5), second medium oxide layer (9), polysilicon gate (3), polycrystalline silicon material (10) With metal material (6)；Gate oxide (4) and first medium oxide layer (5) are located at the Part III of N-type lightly doped drift zone (8) On, polysilicon gate (3) is located on gate oxide (4), polysilicon gate (3), gate oxide in curvature junction termination structures (4), first medium oxide layer (5), metal material (6), N-type lightly doped drift zone (8) and drain region N-type heavy doping contact zone (13) Respectively with the polysilicon gate (3) in straight line junction termination structures, gate oxide (4), first medium oxide layer (5), metal material (6), N-type lightly doped drift zone (8) is connected with drain region N-type heavy doping contact zone (13) and forms ring structure；Wherein, curvature knot Drain region N-type heavy doping contact zone (13) surrounding n-type lightly doped drift zone (8) in terminal structure, the N-type in curvature junction termination structures Lightly doped drift zone (8) surrounds gate oxide (4) and first medium oxide layer (5)；

It is characterized in that, second medium oxide layer (9) and polycrystalline in the N-type lightly doped drift zone (8) of curvature junction termination structures Silicon materials (10) form a plurality of equipotential dielectric ring；And L_a≥2L_b, wherein L_aIndicate the lateral length of curvature junction termination structures, L_b Indicate the longitudinal length of curvature junction termination structures.

2. a kind of groove profile terminal structure of lateral high voltage power device according to claim 1, which is characterized in that L_bShorten, And reduce the part of one of a plurality of dielectric ring or the removal a plurality of dielectric ring.

3. a kind of groove profile terminal structure of lateral high voltage power device according to claim 1, which is characterized in that described N-type lightly doped drift zone (8) surface in straight line junction termination structures and curvature junction termination structures introduces p-type doped layer (14), shape At dual RESURF structure.

4. a kind of groove profile terminal structure of lateral high voltage power device according to claim 3, which is characterized in that the P Type doped layer (14) uses linear varying doping technology: closer to drain region N-type heavy doping contact zone (13), doping concentration is bigger.

5. a kind of groove profile terminal structure of lateral high voltage power device according to claim 1, which is characterized in that described P-type doped layer (14) are introduced inside N-type lightly doped drift zone (8) in straight line junction termination structures and curvature junction termination structures, shape At triple RESURF structures.

6. a kind of groove profile terminal structure of lateral high voltage power device according to claim 1, which is characterized in that in straight line N-type lightly doped drift zone (8) surface in junction termination structures and curvature junction termination structures introduces longitudinal super-junction structure, wherein longitudinal Super-junction structure is made of the n-type doping layer (15) of genesis analysis and p-type doped layer (14).

7. a kind of groove profile terminal structure of lateral high voltage power device according to claim 1, which is characterized in that in straight line N-type lightly doped drift zone (8) surface in junction termination structures and curvature junction termination structures introduces lateral super-junction structure, wherein laterally Super-junction structure is made of the n-type doping layer (15) of cross direction profiles and p-type doped layer (14), and n-type doping layer (15) and p-type doping The position of layer (14) can be interchanged.

8. a kind of groove profile terminal structure of lateral high voltage power device according to claim 1, which is characterized in that second is situated between Matter oxide layer (9) and polycrystalline silicon material (10) are extended downward into P type substrate (11) by N-type lightly doped drift zone (8).

Technical field

The invention belongs to semiconductor power device technology fields, and in particular to a kind of groove profile of transverse direction high voltage power device is whole End structure.

Background technique

The development of high-voltage power integrated circuit be unable to do without the lateral high voltage power device that can be integrated.High voltage power device requirement With high breakdown voltage, low conducting resistance, low switching loss.Lateral high voltage power device realizes that high breakdown voltage is wanted Asking it to be used to undertake the drift region of pressure resistance has low doping concentration, but in order to meet device low on-resistance, and requires conduct The drift region of current channel has high doping concentration.The low on-resistance of MOS class device and the contradictory relation of device pressure resistance limit Such device has been made in the application in high-voltage great-current field.Lateral high voltage power device is usually closing structure, including round knot Structure, racetrack structure and interdigital structure etc..For the racetrack structure and interdigitated configuration of closure, in racetrack portion and finger tip portion There is small curvature terminal in branch, and electric field line can be concentrated at small radius of curvature, and device is integrally easy at small radius of curvature Avalanche breakdown occurs in advance, this proposes new challenge for lateral high voltage power device domain structure.In order to reduce curvature effect, Usually using the width for increasing straight way part and interdigital straight parts, the curvature half of Lai Zeng great bend and interdigital tip portion Diameter or device straight way part and interdigital straight line portion use common structure, increase radius of curvature at small radius of curvature, are formed " dumbbell " shape structure, but the above structure can all be occupied by increasing the way of racetrack portion and interdigital tip portion radius of curvature Biggish chip area leads to increase of the device than conducting resistance to bring unnecessary element layout area loss.

Summary of the invention

The technical problem to be solved by the present invention is in view of the problems of the existing technology, provide a kind of lateral high-voltage power The groove profile terminal structure of device.

In order to solve the above technical problems, the embodiment of the present invention provides a kind of groove profile terminal knot of lateral high voltage power device Structure, including straight line junction termination structures and curvature junction termination structures；

The straight line junction termination structures include P type substrate, P-doped zone, N-type lightly doped drift zone, N-doped zone, leakage Area N-type heavy doping contact zone, source region N-type heavy doping contact zone, source region p-type heavy doping contact zone, gate oxide, first medium oxygen Change layer, second medium oxide layer, polysilicon gate, polycrystalline silicon material and metal material；

P-doped zone and N-type lightly doped drift zone are located in P type substrate, and N-type lightly doped drift zone is located at P-doped zone Two sides, and the side of P-doped zone and N-type lightly doped drift zone contacts with each other；Second medium oxide layer and polycrystalline silicon material Discontinuous longitudinal floating field plate is constituted, is evenly distributed in N-type lightly doped drift zone, and formed in vivo by metal material Equipotential ring, first medium oxide layer and metal material are located in the first part of N-type lightly doped drift zone；P-doped zone it is upper Layer has the source region N-type heavy doping contact zone and source region p-type heavy doping contact zone being connected with metallizing source, source region N-type weight Doping contact zone is located at source region p-type heavy doping contact zone two sides, and source region N-type heavy doping contact zone and source region p-type heavy doping connect The side in touching area contacts with each other；Gate oxide is located at P-doped zone, the fractional source regions type heavy doping contact zone N and N-type and is lightly doped On the second part of drift region, polysilicon gate is located on gate oxide；

The curvature junction termination structures include P type substrate, P-doped zone, N-type lightly doped drift zone, N-doped zone, leakage Area N-type heavy doping contact zone, source region N-type heavy doping contact zone, source region p-type heavy doping contact zone, gate oxide, first medium oxygen Change layer, second medium oxide layer, polysilicon gate, polycrystalline silicon material and metal material；Gate oxide and first medium oxide layer On the Part III of N-type lightly doped drift zone, polysilicon gate is located on gate oxide, more in curvature junction termination structures Polysilicon gate, gate oxide, first medium oxide layer, metal material, N-type lightly doped drift zone and drain region N-type heavy doping contact It is gently mixed with the polysilicon gate in straight line junction termination structures, gate oxide, first medium oxide layer, metal material, N-type respectively in area Miscellaneous drift region is connected with drain region N-type heavy doping contact zone and forms ring structure；Wherein, drain region N-type in curvature junction termination structures Heavy doping contact zone surrounding n-type lightly doped drift zone, the N-type lightly doped drift zone in curvature junction termination structures surround gate oxide With first medium oxide layer；

Second medium oxide layer and polycrystalline silicon material composition in the N-type lightly doped drift zone of curvature junction termination structures is a plurality of Equipotential dielectric ring；And L_a≥2L_b, wherein L_aIndicate the lateral length of curvature junction termination structures, L_bIndicate curvature junction termination structures Longitudinal length.

Based on the above technical solution, the present invention can also be improved as follows.

Further, L_bShorten, and reduces the part of one of a plurality of dielectric ring or the removal a plurality of dielectric ring.

Further, the N-type lightly doped drift zone surface in the straight line junction termination structures and curvature junction termination structures P-type doped layer is introduced, dual RESURF structure is formed.

Further, the p-type doped layer uses linear varying doping technology: closer to drain region N-type heavy doping contact zone, Doping concentration is bigger.

Further, inside the N-type lightly doped drift zone in the straight line junction termination structures and curvature junction termination structures P-type doped layer is introduced, triple RESURF structures are formed.

Further, the N-type lightly doped drift zone surface in straight line junction termination structures and curvature junction termination structures introduces Longitudinal super-junction structure, wherein longitudinal super-junction structure is made of the n-type doping layer of genesis analysis and p-type doped layer.

Further, the N-type lightly doped drift zone surface in straight line junction termination structures and curvature junction termination structures introduces Lateral super-junction structure, wherein lateral super-junction structure is made of the n-type doping layer of cross direction profiles and p-type doped layer, and n-type doping layer It can be interchanged with the position of p-type doped layer.

Further, second medium oxide layer and polycrystalline silicon material extend downward into p-type by N-type lightly doped drift zone and serve as a contrast In bottom.

The beneficial effects of the present invention are: the present invention is by introducing Jie of the equipotential of multiple connections in curvature junction termination structures The pressure resistance of matter ring, such termination environment is born with regard to the curvature PN junction being not only made of N-type drift region with P-doped zone, Dielectric ring has also assisted in pressure resistance, and compared to terminal structure existing for no dielectric ring, the introducing of dielectric ring assumes responsibility for big portion The pressure resistance divided.Since the critical breakdown electric field of medium is much higher than the critical breakdown electric field of silicon materials, so more crypto set can be born Power line aggregation, to reduce the area of termination environment, saving components domain face under the premise of guaranteeing that termination environment is pressure-resistant Product.

Detailed description of the invention

Fig. 1 is a kind of knot of the groove profile terminal structure tip portion of lateral high voltage power device of first embodiment of the invention Structure schematic diagram, wherein (a) is top view, it (b) is front view；

Fig. 2 is a kind of knot of the groove profile terminal structure tip portion of lateral high voltage power device of second embodiment of the invention Structure schematic diagram, wherein (a) is top view, it (b) is front view；

Fig. 3 is a kind of knot of the groove profile terminal structure tip portion of lateral high voltage power device of third embodiment of the invention Structure schematic diagram, wherein (a) is top view, it (b) is front view；

Fig. 4 is a kind of section signal of the groove profile terminal structure of lateral high voltage power device of fourth embodiment of the invention Figure, wherein (a) is the schematic three dimensional views of device straight line junction termination structures, it (b) is the part of devices of device curvature junction termination structures Schematic three dimensional views；

Fig. 5 is a kind of section signal of the groove profile terminal structure of lateral high voltage power device of fifth embodiment of the invention Figure, wherein (a) is the schematic three dimensional views of device straight line junction termination structures, it (b) is the part of devices of device curvature junction termination structures Schematic three dimensional views；

Fig. 6 is a kind of section signal of the groove profile terminal structure of lateral high voltage power device of sixth embodiment of the invention Figure, wherein (a) is the schematic three dimensional views of device straight line junction termination structures, it (b) is the part of devices of device curvature junction termination structures Schematic three dimensional views；

Fig. 7 is a kind of section signal of the groove profile terminal structure of lateral high voltage power device of seventh embodiment of the invention Figure, wherein (a) is the schematic three dimensional views of device straight line junction termination structures, it (b) is the part of devices of device curvature junction termination structures Schematic three dimensional views；

Fig. 8 is a kind of section signal of the groove profile terminal structure of lateral high voltage power device of eighth embodiment of the invention Figure, wherein (a) is the schematic three dimensional views of device straight line junction termination structures, it (b) is the part of devices of device curvature junction termination structures Schematic three dimensional views；

In attached drawing, parts list represented by the reference numerals are as follows:

1, source region p-type heavy doping contact zone, 2, source region N-type heavy doping contact zone, 3, polysilicon gate, 4, gate oxide, 5, first medium oxide layer, 6, metal material, 7, P-doped zone, 8, N-type lightly doped drift zone, 9, second medium oxide layer, 10, polycrystalline silicon material, 11, P type substrate, 12, N-doped zone, 13, drain region N-type heavy doping contact zone, 14, p-type doped layer, 15, N-type doping layer.

Specific embodiment

The principle and features of the present invention will be described below with reference to the accompanying drawings, and the given examples are served only to explain the present invention, and It is non-to be used to limit the scope of the invention.

As shown in Figure 1, a kind of groove profile terminal structure for lateral high voltage power device that first embodiment of the invention provides, packet Include straight line junction termination structures and curvature junction termination structures；

The straight line junction termination structures include P type substrate 11, P-doped zone 7, N-type lightly doped drift zone 8, N-doped zone 12, drain region N-type heavy doping contact zone 13, source region N-type heavy doping contact zone 2, source region p-type heavy doping contact zone 1, gate oxide 4, first medium oxide layer 5, second medium oxide layer 9, polysilicon gate 3, polycrystalline silicon material 10 and metal material 6；

P-doped zone 7 and N-type lightly doped drift zone 8 are located in P type substrate 11, and N-type lightly doped drift zone 8 is located at p-type The two sides of doped region 7, and the side of P-doped zone 7 and N-type lightly doped drift zone 8 contacts with each other；9 He of second medium oxide layer Polycrystalline silicon material 10 constitutes discontinuous longitudinal floating field plate, is evenly distributed in N-type lightly doped drift zone 8, and by gold Belong to material 6 and form internal equipotential ring, first medium oxide layer 5 and metal material 6 are located at first of N-type lightly doped drift zone 8 On point；The upper layer of P-doped zone 7 has the source region N type heavy doping contact zone 2 and source region p-type weight being connected with metallizing source Contact zone 1 is adulterated, source region N-type heavy doping contact zone 2 is located at 1 two sides of source region p-type heavy doping contact zone, and source region N-type heavy doping The side of contact zone 2 and source region p-type heavy doping contact zone 1 contacts with each other；Gate oxide 4 is located at P-doped zone 7, fractional source regions N On type heavy doping contact zone 2 and the second part of N-type lightly doped drift zone 8, polysilicon gate 3 is located on gate oxide 4；

The curvature junction termination structures include P type substrate 11, P-doped zone 7, N-type lightly doped drift zone 8, N-doped zone 12, drain region N-type heavy doping contact zone 13, source region N-type heavy doping contact zone 2, source region p-type heavy doping contact zone 1, gate oxide 4, first medium oxide layer 5, second medium oxide layer 9, polysilicon gate 3, polycrystalline silicon material 10 and metal material 6；Gate oxidation Layer 4 and first medium oxide layer 5 are located on the Part III of N-type lightly doped drift zone 8, and polysilicon gate 3 is located at gate oxide 4 On, polysilicon gate 3, gate oxide 4 in curvature junction termination structures, first medium oxide layer 5, metal material 6, N-type are gently mixed Miscellaneous drift region 8 and drain region N-type heavy doping contact zone 13 respectively with polysilicon gate 3, the gate oxide in straight line junction termination structures 4, first medium oxide layer 5, metal material 6, N-type lightly doped drift zone 8 are connected and are formed with drain region N-type heavy doping contact zone 13 Ring structure；Wherein, 13 surrounding n-type lightly doped drift zone 8 of drain region N-type heavy doping contact zone, curvature in curvature junction termination structures N-type lightly doped drift zone 8 in junction termination structures surrounds gate oxide 4 and first medium oxide layer 5；

Second medium oxide layer 9 and polycrystalline silicon material 10 in the N-type lightly doped drift zone 8 of curvature junction termination structures form A plurality of equipotential dielectric ring；And L_a> 2L_b, wherein L_aIndicate the lateral length of curvature junction termination structures, L_bIndicate curvature knot terminal The longitudinal length of structure.

In above-described embodiment, device of the invention is by introducing Jie of the equipotential of multiple connections in curvature junction termination structures Matter ring, the pressure resistance of such termination environment are just not only that the curvature Pn being made of N-type drift region with P-doped zone ties to bear, Dielectric ring has also assisted in pressure resistance, and compared to terminal structure existing for no dielectric ring, the introducing of dielectric ring assumes responsibility for big portion The pressure resistance divided.Since the critical breakdown electric field of medium is much higher than the critical breakdown electric field of silicon materials, so more crypto set can be born Power line aggregation, so as to reduce the area of termination environment, saving components domain under the premise of guaranteeing that termination environment is pressure-resistant Area.Wherein, the longitudinal length A and lateral length B of dielectric ring may be the same or different.

Working principle of the present invention is as follows:

Straight line junction termination structures are identical as lateral high voltage power device active area structure, and P-doped zone 7 is lightly doped with N-type Drift region 8 is connected, when drain high voltage when, Pn knot metallurgy junction that P-doped zone 7 and N-type lightly doped drift zone 8 are constituted Start to exhaust, the depletion region of N-type lightly doped drift zone 8 will mainly undertake pressure resistance, and peak electric field appears in P type doped region 7 and N The Pn that type lightly doped drift zone 8 is constituted ties metallurgical junction.It, can be by if the curvature junction termination structures of device use traditional structure In the power line height for the metallurgical junction of Pn knot that curvature effect causes to be constituted in P-doped zone 7 and N-type lightly doped drift zone 8 It concentrates, so that the peak electric field at the Pn junction that P-doped zone 7 and N-type lightly doped drift zone 8 are constituted quickly reaches silicon Critical electric field value causes device that avalanche breakdown occurs in advance.Therefore curvature junction termination structures of the invention solve highly dope p-type and mix The power line height concentration for the Pn knot curvature metallurgy junction that miscellaneous area 7 is constituted with N-type lightly doped drift zone 8 mentions during causing The problem of preceding avalanche breakdown.

As shown in Fig. 2, second embodiment of the invention provides a kind of groove profile terminal structure of lateral high voltage power device, this reality Applying example is to make L on the basis of first embodiment_aEqual to 2L_b。

As shown in figure 3, third embodiment of the invention provides a kind of groove profile terminal structure of lateral high voltage power device, this reality Applying example is to shorten L on the basis of first embodiment_b, and reduce a plurality of dielectric ring or the removal a plurality of dielectric ring it One part.Above-described embodiment further reduces the area of device tip portion, saving components chip area.

As shown in figure 4, fourth embodiment of the invention provides a kind of groove profile terminal structure of lateral high voltage power device, this reality Applying example is that N-type on the basis of first embodiment, in the straight line junction termination structures and curvature junction termination structures is lightly doped 8 surface of drift region introduces p-type doped layer 14, forms dual RESURF structure.

As shown in figure 5, fifth embodiment of the invention provides a kind of groove profile terminal structure of lateral high voltage power device, this reality Applying example is on the basis of fourth embodiment, and the p-type doped layer 14 therein uses linear varying doping technology: closer to drain region N-type heavy doping contact zone 13, doping concentration is bigger.In above-described embodiment, p-type doped layer 14 include multiple regions 141, 142 ... .14n, n are positive integer, and the doping concentration in multiple region gradually becomes larger.

As shown in fig. 6, sixth embodiment of the invention provides a kind of groove profile terminal structure of lateral high voltage power device, this reality Applying example is that N-type on the basis of first embodiment, in the straight line junction termination structures and curvature junction termination structures is lightly doped P-type doped layer 14 is introduced inside drift region 8, forms triple RESURF structures.

As shown in fig. 7, seventh embodiment of the invention provides a kind of groove profile terminal structure of lateral high voltage power device, this reality Applying example is that drift is lightly doped in N-type on the basis of first embodiment, in straight line junction termination structures and curvature junction termination structures 8 surface of area introduces longitudinal super-junction structure, wherein n-type doping layer 15 and p-type doped layer 14 of longitudinal super-junction structure by genesis analysis It constitutes.

As shown in figure 8, eighth embodiment of the invention provides a kind of groove profile terminal structure of lateral high voltage power device, this reality Applying example is that drift is lightly doped in N-type on the basis of first embodiment, in straight line junction termination structures and curvature junction termination structures 8 surface of area introduces lateral super-junction structure, wherein n-type doping layer 15 and p-type doped layer 14 of the lateral super-junction structure by cross direction profiles It constitutes, and the position of n-type doping layer 15 and p-type doped layer 14 can be interchanged.

In above-described embodiment, super-junction structure is made of the p-type doped layer 14 and n-type doping layer 15 of aligned identical, such as Fig. 8 Shown, super-junction structure exists for providing low resistance current path when device ON state, and when OFF state keeps high device pressure resistance again, very well Optimize the ratio conducting resistance of device and the relationship of breakdown voltage.The super-junction structure p-type on 8 surface of N-type lightly doped drift zone is mixed The difference of diamicton 14 and the arrangement mode of n-type doping layer 15 will lead to the difference of device surface field distribution situation, and then influence The breakdown voltage of device.

Optionally, second medium oxide layer 9 and polycrystalline silicon material 10 extend downward into P by N-type lightly doped drift zone 8 In type substrate 11.

Drift is lightly doped by the N-type of the curvature knot terminal part in lateral high voltage power semiconductor device in device of the invention Introducing groove profile medium strip ring in area is moved thus to keep away so that the ring-like medium in N-type lightly doped drift zone assumes responsibility for main pressure resistance Exempt from the metallurgical boundary's junction generation high electric field peak value of brought source Pn knot that adds high pressure due to drain terminal, in turn results in the resistance to pressure drop of device It is low.Since the critical breakdown electric field of media slot is much higher than silicon materials, so the present invention can reduce the width of device curvature terminal, Concentrate electric field line more without puncturing in advance, thus saving components chip area, and mutually compatible with CMOS technique, Using the present invention can make high pressure, high speed, low conduction loss lateral high voltage power device.

In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ", " thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside", " up time The orientation or positional relationship of the instructions such as needle ", " counterclockwise ", " axial direction ", " radial direction ", " circumferential direction " be orientation based on the figure or Positional relationship is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must There must be specific orientation, be constructed and operated in a specific orientation, therefore be not considered as limiting the invention.

In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or Implicitly include at least one this feature.In the description of the present invention, the meaning of " plurality " is at least two, such as two, three It is a etc., unless otherwise specifically defined.

In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc. Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；It can be mechanical connect It connects, is also possible to be electrically connected；It can be directly connected, can also can be in two elements indirectly connected through an intermediary The interaction relationship of the connection in portion or two elements, unless otherwise restricted clearly.For those of ordinary skill in the art For, the specific meanings of the above terms in the present invention can be understood according to specific conditions.

In the present invention unless specifically defined or limited otherwise, fisrt feature in the second feature " on " or " down " can be with It is that the first and second features directly contact or the first and second features pass through intermediary mediate contact.Moreover, fisrt feature exists Second feature " on ", " top " and " above " but fisrt feature be directly above or diagonally above the second feature, or be merely representative of First feature horizontal height is higher than second feature.Fisrt feature can be under the second feature " below ", " below " and " below " One feature is directly under or diagonally below the second feature, or is merely representative of first feature horizontal height less than second feature.

In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office It can be combined in any suitable manner in one or more embodiment or examples.In addition, without conflicting with each other, the skill of this field Art personnel can tie the feature of different embodiments or examples described in this specification and different embodiments or examples It closes and combines.

The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.