阅读说明：本技术 树脂组合物、光刻胶组合物及图案化方法 (Resin composition, photoresist composition and patterning method ) 是由 胡凡华 张腾 何卿 刘洪雷 方兵 朴大然 卢克军 张宁 于 2021-08-13 设计创作，主要内容包括：本申请提供一种树脂组合物、光刻胶组合物及图案化方法,属于光刻技术领域。树脂组合物按质量百分比计包括20～50％的第一树脂和50～80％的第二树脂；第一树脂的结构如式Ⅰ所示；第二树脂的结构如式II-1或者式II-2所示。树脂组合物中,含有至少两种二甲酚结构单元质量百分比不同的第二树脂,且二甲酚结构质量百分比≥30％的第二树脂的质量百分占比＜60％。光刻胶组合物按质量百分比计包括：70～85％的溶剂、1～10％的感光剂以及10～20％的树脂组合物；感光剂包括G线感光剂和I线感光剂。该树脂组合物应用于光刻胶中,能够使得光刻胶兼具较高的分辨率和较快的感度。(The application provides a resin composition, a photoresist composition and a patterning method, and belongs to the technical field of photoetching. The resin composition comprises 20-50% of first resin and 50-80% of second resin in percentage by mass; the structure of the first resin is shown as a formula I; the structure of the second resin is shown as a formula II-1 or a formula II-2. The resin composition contains at least two second resins with different mass percentages of xylenol structural units, and the mass percentage of the second resin with xylenol structure mass percentage more than or equal to 30% is less than 60%. The photoresist composition comprises the following components in percentage by mass: 70-85% of solvent, 1-10% of photosensitizer and 10-20% of resin composition; the sensitizer includes a G-line sensitizer and an I-line sensitizer. The resin composition is applied to the photoresist, so that the photoresist has higher resolution and higher sensitivity.)

1. A resin composition is characterized by comprising the following components in percentage by mass: 20-50% of a first resin and 50-80% of a second resin;

the structure of the first resin is shown as a formula I;

the structure of the second resin is shown as a formula II-1 or a formula II-2;

the resin composition contains at least two second resins with different mass percentages of xylenol structural units, and the mass percentage of the second resin with xylenol structure mass percentage more than or equal to 30% is less than 60%.

2. The resin composition according to claim 1, wherein the second resin is present in the resin composition in an amount of > 70% by mass.

3. The resin composition according to claim 1, wherein the mass ratio between any two of the second resins is 1: (1-4).

4. The resin composition according to claim 1, wherein the mass percentage of the xylenol structural unit in each of the second resins is 10 to 30%.

5. The resin composition according to any one of claims 1 to 4, wherein the structure of the second resin is represented by formula II-1, and the resin composition comprises two kinds of the second resins.

6. The resin composition according to any one of claims 1 to 4, wherein n is 15. ltoreq. n₃+n₄Less than or equal to 60 percent, wherein the weight average molecular weight of the second resin is 2000-8000;

and/or, 15. ltoreq. n₁+n₂Less than or equal to 60 percent, and the weight average molecular weight of the first resin is 2000-8000.

7. A photoresist composition, comprising, by mass percent: 70 to 85% of a solvent, 1 to 10% of a photosensitizer, and 10 to 20% of the resin composition according to any one of claims 1 to 6; the sensitizer includes a G-line sensitizer and an I-line sensitizer.

8. The photoresist composition of claim 7, wherein the mass ratio of the G-line sensitizer to the I-line sensitizer is (30: 70) - (70: 30), optionally the mass ratio of the G-line sensitizer to the I-line sensitizer is 2: 1;

and/or the structure of the G line photosensitizer is shown as a formula III, and the structure of the I line photosensitizer is shown as a formula IV;

wherein R is₁、R₂、R₃And R₄At least three of them are independently selected from the structures shown in formula V or formula VI, and the rest is hydrogen radical; r₅、R₆、R₇And R₈At least three of them are independently selected from the structures shown in formula V or formula VI, and the rest is hydrogen radical;

9. the photoresist composition according to claim 7 or 8, further comprising, in mass percent: 1 to 5% of sensitizer, 0.05 to 1% of surface leveling agent and 0.5 to 2% of adhesion promoter.

10. A patterning method, comprising: forming a photoresist layer using the photoresist composition of any one of claims 7 to 9, and exposing the photoresist layer through a mask plate using a mixed light source including G-line, H-line and I-line, and then developing to remove the exposed portion of the photoresist layer to form a photoresist pattern.

Technical Field

The application relates to the technical field of photoetching, in particular to a resin composition, a photoresist composition and a patterning method.

Background

The OLED is a new generation of display technology following the LCD, and the biggest technical difference between the OLED and the LCD is whether the OLED is self-luminous or not. The OLED structure is simpler, and the fact that each pixel can control whether the pixel emits light or not is different essentially, so that the natural technical barriers of the OLED and the LCD are formed. Due to the self-luminous characteristic, the OLED screen can not emit light completely when displaying black, can display perfect picture contrast, and can display pictures more vividly and truly. Therefore, OLEDs are a trend for future displays.

Photoresist is a key basic material in photolithography and is also one of the important upstream materials in OLED panel fabrication. With the wide application of flat panel displays in the multimedia field, panel manufacturers need to continuously improve the resolution of the panels, and put forward an improvement requirement on the resolution of the existing photoresist; also, in order to improve productivity, the photoresist is required to have high sensitivity. Therefore, it is required to develop a photoresist composition capable of satisfying both high resolution and high sensitivity.

However, in current lithography, the sensitivity and resolution of the phenolic resin-diazonaphthoquinone system resist generally show opposite trends, and generally the sensitivity is slower with higher resolution.

Disclosure of Invention

The present disclosure provides a resin composition, a photoresist composition, and a patterning method, wherein the resin composition is applied to a photoresist, and the photoresist has both high resolution and fast sensitivity.

The embodiment of the application is realized as follows:

in a first aspect, an embodiment of the present application provides a resin composition, including, by mass: 20-50% of a first resin and 50-80% of a second resin; the structure of the first resin is shown as a formula I; the structure of the second resin is shown as a formula II-1 or a formula II-2.

The resin composition contains at least two second resins with different mass percentages of xylenol structural units, and the mass percentage of the second resin with xylenol structure mass percentage more than or equal to 30% is less than 60%.

In a second aspect, embodiments of the present application provide a photoresist composition, including by mass percent: 70-85% of a solvent, 1-10% of a photosensitizer and 10-20% of the resin composition provided in the embodiment of the first aspect; the sensitizer includes a G-line sensitizer and an I-line sensitizer.

In a third aspect, an embodiment of the present application provides a patterning method, including: a photoresist layer is formed using the photoresist composition as provided in the second aspect embodiment, and the photoresist layer is exposed through a mask plate using a hybrid light source including G-lines, H-lines, and I-lines, and then developed to remove the exposed portion of the photoresist layer to form a photoresist pattern.

The resin composition, the photoresist composition and the patterning method provided by the embodiment of the application have the beneficial effects that:

according to the resin composition provided by the application, the first resin is adopted to effectively improve the sensitivity, and at least two specific xylenol resins with different mass percentages of xylenol structural units are added as the second resin to effectively improve the resolution; meanwhile, the first resin and the second resin are matched according to a specific proportion, so that the coordination of resolution and sensitivity can be better realized. The resin composition is applied to the photoresist containing the G-line photosensitizer and the I-line photosensitizer, so that the photoresist has higher resolution and higher sensitivity.

According to the photoresist composition provided by the application, the resin composition is matched with the G-line photosensitizer and the I-line photosensitizer according to a specific proportion, the resolution can reach 2 mu m or even better, and meanwhile, the sensitivity can be close to 50mj or even lower than 50mj, so that the photoresist has higher resolution and faster sensitivity.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.

FIG. 1 is a topographical view of a photoresist composition provided in example 7 of the present application undergoing resolution testing;

FIG. 2 is a topographical view of a photoresist composition provided in example 8 of the present application subjected to resolution testing;

FIG. 3 is a topographical view of a photoresist composition provided in example 9 of the present application subjected to resolution testing;

FIG. 4 is a topographical view of a photoresist composition provided in example 10 of the present application subjected to resolution testing;

FIG. 5 is a topographical view of a photoresist composition provided in comparative example 4 of the present application subjected to resolution testing.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions of the embodiments of the present application will be clearly and completely described below. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.

It should be noted that "and/or" in the present application, such as "feature 1 and/or feature 2" refers to "feature 1" alone, "feature 2" alone, and "feature 1" plus "feature 2" alone.

In addition, in the description of the present application, the meaning of "a plurality" of "one or more" means two or more unless otherwise specified; the range of "numerical value a to numerical value b" includes both values "a" and "b", and "unit of measure" in "numerical value a to numerical value b + unit of measure" represents both "unit of measure" of "numerical value a" and "numerical value b".

The resin composition, the photoresist composition and the patterning method according to the embodiments of the present application will be described in detail below.

The resolution (R) of the lithographic process is proportional to the exposure wavelength (λ) and inversely proportional to the lens Numerical Aperture (NA), R ═ K λ/NA. Therefore, increasing the lens numerical aperture or shortening the exposure wavelength can increase the resolution of the lithographic process. In order to improve the lithography resolution, the exposure wavelength of the existing lithography process is shortened from 436nm of G-line and 365nm of I-line to 248nm of KrF excimer laser, and then to 193nm of the existing ArF excimer laser and 13-14 nm of Extreme Ultraviolet (EUV).

Currently, in the production of flat panel displays, for the sake of increasing the production capacity and saving the cost, the commonly used exposure light sources include G-line (436nm) and I-line (365nm), and it is difficult to achieve the resolution enhancement by the wavelength. Therefore, increasing the resolution by increasing the numerical aperture of the lens is an important way for photoresists to meet the production requirements of flat panel displays.

The inventor researches and discovers that in a photoresist system containing a G-line photosensitizer and an I-line photosensitizer, under the condition of adopting a common phenolic resin, the numerical aperture of a lens can be improved by adding at least two specific xylenol resins with different mass percentages of xylenol, so that the resolution of the photoresist can be effectively improved. In the system, the addition of the specific xylenol resin can have certain influence on the sensitivity of the photoresist, the common phenolic resin is favorable for improving the sensitivity, and the common phenolic resin and the specific xylenol resin are matched according to a specific proportion, so that the coordination of the resolution and the sensitivity can be better realized.

In a first aspect, an embodiment of the present application provides a resin composition, including, by mass: 20-50% of a first resin and 50-80% of a second resin.

The structure of the first resin is shown as formula I. It is a linear copolymer obtained by polymerizing m-cresol, p-cresol and formaldehyde in the presence of an acid catalyst.

The second resin has a structure shown in a formula II-1 or a formula II-2, and is a linear copolymer obtained by polymerizing phenol, 3, 5-xylenol and formaldehyde in the presence of an acid catalyst, or a linear copolymer obtained by polymerizing phenol, 2, 5-xylenol (containing inevitable 2, 4-xylenol impurities) and formaldehyde in the presence of an acid catalyst.

The resin composition contains at least two second resins with different mass percentages of xylenol structural units, and the mass percentage of the second resin with xylenol structure mass percentage more than or equal to 30% is less than 60%.

It is understood that in the present application, n₁、n₂、n₃And n₄All refer to natural numbers greater than 0. As an example, n₁And n₂And (b) polymerizing the linear copolymer of formula I in a mass ratio of m-cresol monomers to p-cresol monomers of 1: 1.

according to the resin composition, the first resin shown as the formula I is adopted to effectively improve the sensitivity, and at least two xylenol resins shown as the formula II-1 or the formula II-2 with different mass percentages of xylenol structural units are added to effectively improve the resolution. The first resin and the second resin are matched according to a specific ratio, so that the coordination of resolution and sensitivity can be better realized, and the resin composition is applied to a photoresist system containing a G-line photosensitizer and an I-line photosensitizer, so that the photoresist has higher resolution and faster sensitivity.

The inventors have found that when only one second resin is used, or when the mass percentage of the xylenol structure is more than or equal to 30% and more than or equal to 60% of the second resin, the coordination of the resolution and the sensitivity is affected, and the photoresist has low resolution or low sensitivity based on the comparison of the resin composition of the present application.

Considering that the xylenol resins with different mass percentages of xylenol structural units in the second resin need to have proper proportions so as to facilitate the good coordination of a plurality of different xylenol resins.

As an example, the mass ratio between any two second resins is 1: (1-4), such as but not limited to any one of (1: 1), (1: 2), (1: 3) and (1: 1) or a range between any two.

In some exemplary embodiments, the resin composition is composed of a first resin and a second resin. In the resin composition, the mass percentage of the second resin is, for example, but not limited to, any one of 50%, 55%, 60%, 65%, 70%, 75%, and 80% or a range value between any two; correspondingly, the mass percentage of the first resin is, for example and without limitation, any one point value of 20%, 25%, 30%, 35%, 40%, 45% and 50% or a range value between any two.

The resin composition of the present application is not limited to containing only the first resin and the second resin, and in other embodiments, other resins may be added to the resin composition in a conventional manner in a certain amount as needed.

The inventor researches and discovers that when the resin composition provided by the application is applied to a photoresist system containing a G-line photosensitizer and an I-line photosensitizer, the resin composition can achieve higher sensitivity; and the content of the second resin is increased to a certain extent in the specific range of the application, which is beneficial to further improving the resolution of the photoresist and reaching 1.5 mu m or even better.

Based on the above findings, in some exemplary embodiments, the second resin is present in the resin composition in an amount of > 70% by mass, or 75 to 80% by mass, for example 80% by mass. Optionally, the balance is the first resin.

In the present application, the xylenol resins may have the same or different structures from one another among different second resins. That is, the structure of all the second resins may be formula II-1 or formula II-2, or a part of the second resins may be formula II-1 and another part of the second resins may be formula II-2.

The inventor also researches and discovers that when the second resins are all the xylenol resins shown in the formula II-1, the xylenol resins with different mass percentages of two xylenol structural units can better give consideration to higher resolution and faster sensitivity. And when more xylenol resins with different mass percentages of xylenol structural units are adopted, the resolution and the sensitivity are not obviously improved. Therefore, in order to simplify the production operation and facilitate the management of raw materials, it is optional to use only the second resins different in the mass percentage of the two xylenol structural units.

Based on the above findings, as an example, the structure of the second resin is represented by the formula II-1, and the resin composition contains two kinds of second resins.

Considering that in the current process, the linear phenolic resin with the xylenol weight percentage of about 10-30% is more easily obtained for the xylenol resins shown in the formulas II-1 and II-2. In addition, the research also finds that when the linear phenolic resin with the mass percentage of the xylenol is adopted, the obtained resin composition can enable the photoresist to better achieve both high resolution and high sensitivity when being applied to the photoresist.

Optionally, the mass percentage of the xylenol structural unit in each second resin is 10-30%, and as an example, the second resin is selected from at least two of a first xylenol resin, a second xylenol resin and a third xylenol resin. Wherein, the mass percent of the xylenol structural unit in the first xylenol resin is 10-12%, for example 10%; the mass percentage of the xylenol structural unit in the second xylenol resin is 18-22%, for example 20%; the mass percentage of the xylenol structural unit in the third xylenol resin is 28-30%, for example 30%.

Considering that the molecular weight of the resin material is controlled in a proper range, the overall performance of the photoresist is favorably ensured.

As the second resin, 15. ltoreq. n is exemplified₃+n₄Less than or equal to 60 percent, and the weight average molecular weight of the second resin is 2000-8000.

As the first resin, 15. ltoreq. n is exemplified₁+n₂Less than or equal to 60 percent, and the weight average molecular weight of the first resin is 2000-8000.

In a second aspect, embodiments of the present application provide a photoresist composition, including by mass percent: 70-85% of a solvent, 1-10% of a photosensitizer and 10-20% of the resin composition provided in the embodiment of the first aspect; the sensitizer includes a G-line sensitizer and an I-line sensitizer.

According to the photoresist composition provided by the application, the resin composition is matched with the G-line photosensitizer and the I-line photosensitizer according to a specific ratio, the resolution can reach 2 mu m or even 1.5 mu m, and the sensitivity can be close to 50mj or even lower than 50mj, so that the photoresist has higher resolution and faster sensitivity.

Regarding the resin composition, its mass percentage in the photoresist composition is, for example, but not limited to, any one point value of 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, and 20%, or a range value between any two.

With respect to the photosensitizer, its mass percentage in the photoresist composition is, for example, but not limited to, any one of 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, and 10% or a range between any two.

It is understood that, in the present application, the kinds of the G-line sensitizer and the I-line sensitizer and the ratio of the amounts of the G-line sensitizer and the I-line sensitizer may be determined according to a resist system containing the G-line sensitizer and the I-line sensitizer, which is well known in the art.

As an example of the amount ratio of the photosensitizer, the mass ratio of the G-line photosensitizer to the I-line photosensitizer is (30: 70) to (70: 30), and is, for example, but not limited to, any one of (30: 70), (40: 70), (50: 70), (60: 70), (70: 60), (70: 40), and (70: 20) or a range between any two. Alternatively, the mass ratio of the G-line sensitizer to the I-line sensitizer is 2: 1.

as an example of the type of sensitizer, the structure of a G-line sensitizer is shown in formula III, and the structure of an I-line sensitizer is shown in formula IV.

Wherein R is₁、R₂、R₃And R₄The structures of at least three of the three are shown as a formula V or a formula VI, optionally shown as a formula V; the remainder being hydrogen radicals. R₅、R₆、R₇And R₈The structures of at least three of the three are shown as a formula V or a formula VI, optionally shown as a formula V; the remainder being hydrogen radicals.

Regarding the solvent, its mass percentage in the photoresist composition is, for example, but not limited to, any one of 70%, 73%, 75%, 77%, 80%, 82%, and 85% or a range value between any two.

In view of the need for a solvent having good solubility and good coating properties, the solvent is optionally selected from at least one of ethers including ethylene glycol monomethyl ether, propylene glycol monomethyl ether, diethylene glycol monomethyl ether and diethylene glycol dimethyl ether, esters including propylene glycol methyl ether acetate, ethyl lactate, ethyl acetate and N-butyl acetate, and N-methylpyrrolidone. As an example, the solvent is propylene glycol methyl ether acetate.

It is understood that in the present application, the photoresist composition may further include one or more additives according to performance requirements. In addition, the type and amount of additives may be selected according to criteria well known in the art.

As one example, the photoresist composition further includes at least one or more of a sensitizer, a surface leveling agent, and an adhesion promoter.

As for the sensitizer, it may alternatively be a small molecular resin monomer, and as an example, its structure is shown in formula VII. The sensitizer is optionally present in the photoresist composition at a mass percent of 1-5%, such as but not limited to any one of 1%, 2%, 3%, 4%, and 5%, or a range between any two.

With respect to the surface leveling agent, it is optionally a fluorosurfactant. The mass percentage of the leveling agent in the photoresist composition is optionally 0.05-1%, such as but not limited to any one of 0.05%, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9% and 1%, or a range value between any two.

As for the adhesion promoter, it may be optionally a vinyl ether-based compound, for example, an ultra-high molecular weight vinyl ether-based compound having a molecular weight of 100 ten thousand or more. The adhesion promoter is optionally present in the photoresist composition at a mass percent of 0.5-2%, such as but not limited to any one of 0.5%, 1%, 1.5%, and 2%, or a range between any two.

In a third aspect, an embodiment of the present application provides a patterning method, including: a photoresist layer is formed using the photoresist composition as provided in the second aspect embodiment, and the photoresist layer is exposed through a mask plate using a hybrid light source including G-lines, H-lines, and I-lines, and then developed to remove the exposed portion of the photoresist layer to form a photoresist pattern.

According to the patterning method, the adopted positive photoresist composition has the characteristics of high resolution and high sensitivity, can be well applied to an OLED flat-panel display, and is used for forming a pattern with excellent outline on each layer of the OLED flat-panel display.

The features and properties of the present application are described in further detail below with reference to examples.

Examples and comparative examples

A photoresist composition comprising: 13g of resin composition, 3g of photosensitizer, 1g of sensitizer, 0.05g of surface leveling agent, 0.5g of adhesion promoter and 80g of solvent.

The resin composition was composed of a first resin represented by formula I and a second resin represented by formula II-1, and the kinds and the proportions of the respective resins in the resin composition were as shown in Table 1. Regarding the first resin, the copolymerization raw material thereof was 1:1 in mass ratio of the intermediate cresol monomer and the p-cresol monomer, and the weight average molecular weight thereof was 4000. As for the second resin, its weight average molecular weight is 4000-6000.

The photosensitizer consists of 2g of the photosensitizer shown as the formula III and 1g of the photosensitizer shown as the formula IV. In the formula III, R₁、R₂、R₃And R₄R in (1)₁、R₂、R₄The structure of (A) is shown as formula V, and the rest is hydrogen radical. In the formula IV, R₅、R₆、R₇And R₈R in (1)₅、R₆、R₈The structure of (A) is shown as formula V, and the rest is hydrogen radical.

The sensitizer is shown as formula VII. The surface leveling agent is a fluorine-containing surfactant and is available in the F-500 series of DIC (Dajapan ink). The adhesion promoter is ultra-high molecular (more than 100 ten thousand) vinyl ether compounds, and is a P series ether compound purchased from Chishieiyi chemical development Co., Ltd. The solvent is propylene glycol methyl ether acetate.

TABLE 1 composition of resin composition (wt%)

Note: the xylenol resin of 10% means a xylenol resin having a xylenol structural unit of 10% by mass, the xylenol resin of 20% means a xylenol resin having a xylenol structural unit of 20% by mass, and the xylenol resin of 30% means a xylenol resin having a xylenol structural unit of 30% by mass.

Test examples

The performance of the photoresist compositions provided in the examples and comparative examples was evaluated by the following methods:

coating photoresist on a silicon wafer by a slit coating mode, drying the silicon wafer in vacuum by VCD, and baking the silicon wafer for 90s on a hot plate at the temperature of 110 ℃ to form a photoresist coating, wherein the thickness of the coating is about 1.5 mu m. And then exposing the photoresist layer with different energies by using a mixed light source of G line, H line and I line, developing for 1min by using 2.38 wt% of TMAH after exposure, washing for 25s, and drying to remove the exposed part to form a photoresist pattern.

The thickness of the photoresist layer before and after exposure was checked by a film thickness meter to evaluate the residual film rate of the photoresist.

The photoresist pattern was examined using a scanning electron microscope to compare the sensitivity and resolution of the photoresist. The sensitivity is based on the exposure energy corresponding to the 2 mu m line, and the smaller the exposure energy is, the more the productivity is improved; the resolution is based on the minimum line width that can be achieved, with smaller line widths indicating higher resolution.

The topography of the photoresist compositions provided in examples 7-10 and comparative example 4 are shown in fig. 1-5 in sequence. In each figure, a, b, c, d, e and f correspond to the pattern diagrams with the mask line width of 1.2 μm, 1.3 μm, 1.5 μm, 2.0 μm, 2.5 μm and 3.0 μm in sequence.

In FIG. 1, the line width at the bottom is 1.33 μm and the line width at the top is 421nm in FIG. 1 (a); in FIG. 1(b), the bottom line width is 1.52 μm and the top line width is 694 nm; in FIG. 1(c), the bottom line width is 1.65 μm and the top line width is 823 nm; in FIG. 1(d), the bottom line width is 2.00 μm and the top line width is 1.30 μm; in FIG. 1(e), the bottom line width is 2.56 μm and the top line width is 2.20 μm; in FIG. 1(f), the bottom line width was 3.00. mu.m, and the top line width was 2.56. mu.m.

In FIG. 2, the bottom line width is 1.60 μm and the top line width is 524nm in FIG. 2 (a); in FIG. 2(b), the bottom line width is 1.54 μm and the top line width is 658 nm; in FIG. 2(c), the bottom line width is 1.62 μm and the top line width is 902 nm; in FIG. 2(d), the bottom line width is 1.98 μm and the top line width is 1.49 μm; in FIG. 2(e), the bottom line width is 2.61 μm and the top line width is 2.10 μm; in FIG. 2(f), the bottom line width was 3.04 μm and the top line width was 2.48. mu.m.

In FIG. 3, the bottom line width is 1.42 μm and the top line width is 722nm in FIG. 3 (a); in FIG. 3(b), the bottom line width is 1.65 μm and the top line width is 823 nm; in FIG. 3(c), the bottom line width is 1.61 μm and the top line width is 1.12 μm; in FIG. 3(d), the bottom line width is 2.05 μm and the top line width is 1.71 μm; in FIG. 3(e), the bottom line width is 2.63 μm and the top line width is 2.30 μm; in FIG. 3(f), the bottom line width was 3.02 μm and the top line width was 2.72. mu.m.

In FIG. 4, the bottom line width in FIG. 4(a) is 1.21 μm and the top line width is 548 nm; in FIG. 4(b), the bottom line width is 1.54 μm and the top line width is 658 nm; in FIG. 4(c), the bottom line width is 1.46 μm and the top line width is 873 nm; in FIG. 4(d), the bottom line width is 1.90 μm and the top line width is 1.40 μm; in FIG. 4(e), the bottom line width is 2.61 μm and the top line width is 2.10 μm; in FIG. 4(f), the bottom line width was 3.04 μm and the top line width was 2.48. mu.m.

In FIG. 5, the specific dimension of the pattern is not exposed because the resolution is not achieved in FIG. 5 (a); in FIG. 5(b), the bottom line width is 1.81 μm and the top line width is 548 nm; in FIG. 5(c), the bottom line width is 1.53 μm and the top line width is 331 nm; in FIG. 5(d), the bottom line width is 1.67 μm and the top line width is 444 nm; in FIG. 5(e), the bottom line width is 2.31 μm and the top line width is 1.26 μm; in FIG. 5(f), the bottom line width is 2.95 μm and the top line width is 2.08. mu.m.

In examples 7 to 10, the content of the second resin in the resin composition was all 80%, and the resin composition contained two or three kinds of the second resins. As can be seen from fig. 1 to 4, the resolution of the photoresist provided in embodiment 7 can reach 1.5 μm, the resolution of the photoresist provided in embodiment 8 can reach 1.3 μm, the resolution of the photoresist provided in embodiment 9 can reach 1.2 μm, and the resolution of the photoresist provided in embodiment 10 can reach 1.3 μm.

In comparative example 4, only the first resin was used. As can be seen from FIG. 5, the photoresist provided in comparative example 4 can only achieve a resolution of 3 μm.

Second, the results of measuring the sensitivity, residual film rate and resolution of the photoresists in the respective examples and comparative examples are shown in table 2.

TABLE 2 sensitivity, residual film rate and resolution of photoresists

The photoresist composition provided by embodiments 1-13 of the application has the characteristics of high resolution, high sensitivity and high residual film rate, and can better meet the requirements of OLED flat-panel display manufacturing.

As is clear from comparison of examples 1 to 6 and examples 7 to 13, in the resin composition, the content of the second resin is increased to > 70% while controlling the content of the second resin to 50 to 80%, and the resolution can be increased from 1 to 2 μm to 1 to 1.5 μm while maintaining high sensitivity.

As can be seen from the comparison between examples 7 to 11, when the second resin content is constant, the resolution and sensitivity of the photoresist are not greatly affected by using two kinds of xylenol resins or three kinds of xylenol resins.

In comparative examples 1 to 3, only the second resin was used and only one of the second resins was used, and the sensitivity of the obtained photoresist was slow.

In comparative example 4, only the first resin was used, and the resolution of the resulting photoresist was low.

In comparative examples 5 to 11, the first resin and the second resin were used in combination, and only one of the second resins was used, and the obtained photoresists could not achieve both resolution and sensitivity.

In comparative examples 12 to 13, the content of the second resin was constant, and two types of second resins were used in the resin composition, wherein the content of the xylenol resin having a xylenol structure mass percentage of not less than 30% was too high, and the obtained photoresists were all slow in sensitivity.

In comparative examples 14 to 17, although the first resin and the second resin were used for compounding and the resin composition was prepared with a plurality of second resins, the resolution of the obtained photoresist was low because the content of the second resin in the resin composition was too low.

In comparative examples 18 to 20, although the first resin and the second resin were used in combination and the resin composition was prepared using a plurality of second resins, the sensitivity of the resulting photoresist was slow due to the high content of the second resin in the resin composition.

The embodiments described above are some, but not all embodiments of the present application. The detailed description of the embodiments of the present application is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.