阅读说明：本技术 Oled显示模组、显示屏、终端及亮度自动调节的方法 (OLED display module, display screen, terminal and automatic brightness adjusting method ) 是由 刘至哲 刘俊彦 吴欣凯 于 2020-04-30 设计创作，主要内容包括：本申请提供一种OLED显示模组、显示屏、终端及亮度自动调节的方法,通过像素定义层中像素凸台的底壁和侧壁之间的夹角设置在预设范围内,使得像素定义层靠近基板的一端的截面宽度大于像素定义层远离基板的一端的截面宽度,使得OTFT能接收到至少一个发光区域发出的光。驱动芯片通过OTFT的漏电流能够获取到发光区域的光强度指示信息,且基于预先获得的基准光强度指示信息、检测的光强度指示信息及周围环境等综合因素,对驱动电流进行相应补偿,使得在每个发光区域对应的第一电极和第二电极之间可以以驱动电流驱动发光区域发光,从而能够有效实现对OLED器件的寿命补偿。(The application provides an OLED display module, display screen, terminal and luminance automatically regulated's method, the contained angle setting between the diapire through the pixel boss in the pixel definition layer and the lateral wall is in predetermineeing the within range for the cross-sectional width that the pixel definition layer is close to the one end of base plate is greater than the cross-sectional width that the pixel definition layer kept away from the one end of base plate, makes OTFT can receive the light that at least one luminous region sent. The driving chip can acquire light intensity indication information of the light emitting region through leakage current of the OTFT, and correspondingly compensates the driving current based on comprehensive factors such as pre-acquired reference light intensity indication information, detected light intensity indication information and surrounding environment, so that the light emitting region can be driven by the driving current to emit light between the first electrode and the second electrode corresponding to each light emitting region, and service life compensation of the OLED device can be effectively realized.)

1. An Organic Light Emitting Diode (OLED) display module, comprising:

a substrate;

a plurality of first electrodes arranged on the substrate at intervals;

the pixel defining layer is positioned on the substrate and is provided with a plurality of pixel openings and pixel bosses which are arranged at intervals, a first electrode is exposed at the bottom of one pixel opening, an included angle between the bottom wall and the side wall of each pixel boss is within a preset range, and each pixel opening forms a light emitting area in the OLED display screen;

a plurality of organic light emitting layers, each organic light emitting layer being located within one pixel opening;

a plurality of second electrodes, each of which is positioned on one of the organic light emitting layers and covers the organic light emitting layer;

a thin film encapsulation layer on the plurality of second electrodes and filling each pixel opening;

at least one Organic Thin Film Transistor (OTFT) positioned on the thin film encapsulation layer and capable of receiving light emitted by at least one light emitting region;

the driving chip is used for driving the light-emitting areas to emit light between the first electrode and the second electrode corresponding to each light-emitting area by driving current, the driving current is determined according to leakage current of the OTFT corresponding to the light-emitting area, and the leakage current of the OTFT reflects light intensity of the light-emitting area.

2. The OLED display module of claim 1, wherein the at least one Organic Thin Film Transistor (OTFT), located on the thin film encapsulation layer, comprises:

the at least one OTFT is located in an area other than a forward projection area of the entire light emitting area on the thin film encapsulation layer.

3. The OLED display module of claim 2, wherein the at least one Organic Thin Film Transistor (OTFT), located on the thin film encapsulation layer, comprises:

each light emitting region is provided with at least one OTFT in an area other than the orthographic projection area on the thin film encapsulation layer.

4. The OLED display module of claim 3, wherein at least one Organic Thin Film Transistor (OTFT) on the thin film encapsulation layer comprises:

the top wall of each pixel boss is provided with an OTFT in the orthographic projection area on the thin film encapsulation layer.

5. The OLED display module of claim 3 or 4, wherein at least one Organic Thin Film Transistor (OTFT) on the thin film encapsulation layer comprises:

and the top wall of the pixel boss corresponding to the same direction of the light emitting region emitting the light with the same wave band is provided with an OTFT in the orthographic projection region on the thin film packaging layer.

6. The OLED display module of claim 1 or 2, wherein at least one Organic Thin Film Transistor (OTFT) on the thin film encapsulation layer comprises:

at least one OTFT is arranged in the area, outside the orthographic projection area, of each light emitting area emitting light of a preset waveband on the thin film packaging layer.

7. The OLED display module of any one of claims 1-6,

the preset response band of the at least one OTFT is:

the same wavelength band as the light impinging on the at least one OTFT, or within the wavelength band of the light impinging on the at least one OTFT.

8. The OLED display module of claim 7,

the preset response band includes: the full width at half maximum is 10nm-50nm, the response peak is 440nm-480nm, the response peak is 520nm-570nm or the response peak is 610nm-650 nm.

9. The OLED display module of any one of claims 1-8, wherein the predetermined range is greater than 0 ° and equal to or less than 30 °.

10. The OLED display module of any one of claims 1-9,

the second electrodes on each organic light emitting layer are electrically connected together.

11. The OLED display module of claim 10,

the electrically connected second electrodes are disposed in a pattern in an area other than the entire light-emitting area.

12. The OLED display module of claim 11,

the electrically connected second electrodes are arranged in a pattern in the corresponding area of the top wall of each pixel boss.

13. The OLED display module defined in any one of claims 1-12, further comprising: circuitry for driving the OTFT;

the circuit is electrically connected with the at least one OTFT and is used for controlling the at least one OTFT to be switched on or switched off.

14. An OLED display screen, comprising: a cover plate, a back plate and the OLED display module of any one of claims 1-13; the OLED display module is located between the back plate and the cover plate.

15. A terminal, comprising: a housing assembly and the OLED display screen of claim 14; the OLED display screen is located inside the shell assembly.

16. A method for automatically adjusting the brightness of an Organic Light Emitting Diode (OLED), which is characterized by comprising the following steps:

obtaining light intensity indicating information corresponding to the detected light emitting area of the organic light emitting diode OLED, wherein the light intensity indicating information is used for indicating the light intensity of the detected light emitting area;

determining a driving current of the light emitting region based on reference light intensity indicating information obtained in advance and the detected light intensity indicating information;

instructing to drive the light emitting region to emit light with the determined drive current.

17. The method according to claim 16, wherein the determining the driving current of the light emitting region based on the reference light intensity indication information obtained in advance and the detected light intensity indication information comprises:

determining a ratio of reference light intensity indication information obtained in advance and the detected light intensity indication information;

and determining the driving current by a table look-up mode or a corresponding relation between the ratio and the driving current.

18. An electronic device, comprising: a memory and a processor;

the memory is used for storing program instructions;

the processor is used for calling the program instructions in the memory to execute the OLED brightness automatic adjustment method of claim 16 or 17.

19. A computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, carries out the method of OLED brightness auto-adjustment according to claim 16 or 17.

20. A computer program product, comprising: executing instructions, which are stored in a readable storage medium, from which at least one processor of an electronic device can read the executing instructions, and executing the executing instructions by the at least one processor causes the electronic device to implement the method for automatically adjusting the brightness of an OLED according to claim 16 or 17.

Technical Field

The application relates to the technical field of display, in particular to an OLED display module, a display screen, a terminal and a brightness automatic adjusting method.

Background

For a terminal including an organic light-emitting diode (OLED) display, due to a difference in lifetime between OLED devices of three primary colors in the OLED display, the OLED display may suffer from color shift, which may result in a shortened lifetime of the OLED display, and thus, competitiveness of the terminal may be reduced.

Currently, a driving scheme such as 2T1C, 7T1C, or 6T2C is adopted to compensate the change of the threshold voltage Vth with time in a Thin Film Transistor (TFT) so as to compensate the lifetime of the OLED display. However, the light emitting efficiency of the OLED device itself still decreases with time, and the driving structure cannot compensate for this phenomenon.

Based on the above description, in order to compensate the lifetime of the OLED device, the lifetime of the OLED device may be compensated by using a lifetime model such as Data Counting (Data Counting) or Voltage Sensing (Voltage Sensing). However, since the lifetime of the OLED device is affected by many factors such as the production environment, the device thickness, the organic material batch, or the backplane process, the actual lifetime of the OLED device has a large discreteness, and therefore, the lifetime model cannot fit the actual lifetime of all the OLED devices, which easily results in insufficient or excessive compensation, and further generates a new mura.

Disclosure of Invention

The application provides an OLED display module, a display screen, a terminal and a method for automatically adjusting brightness, and aims to solve the problem that the service life compensation effect of an OLED device is reduced due to the difference between the existing service life model and the actual service life curve of the OLED device.

In a first aspect, the present application provides an OLED display module, including:

a substrate;

a plurality of first electrodes arranged on the substrate at intervals;

the pixel definition layer is positioned on the substrate and is provided with a plurality of pixel openings and pixel bosses which are arranged at intervals, a first electrode is exposed at the bottom of one pixel opening, an included angle between the bottom wall and the side wall of each pixel boss is within a preset range, and each pixel opening forms a light emitting area in the OLED display screen;

a plurality of organic light emitting layers, each organic light emitting layer being located within one pixel opening;

a plurality of second electrodes, each of which is positioned on one of the organic light emitting layers and covers the organic light emitting layer;

a thin film encapsulation layer on the plurality of second electrodes and filling each pixel opening;

at least one Organic Thin Film Transistor (OTFT) positioned on the thin film encapsulation layer and capable of receiving light emitted by at least one light emitting region;

the driving chip is used for driving the light-emitting regions to emit light between the first electrodes and the second electrodes corresponding to each light-emitting region by driving current, the driving current is determined according to leakage current of the OTFT corresponding to the light-emitting region, and the leakage current of the OTFT reflects light intensity of the light-emitting region.

Through the OLED display module that first aspect provided, the contained angle setting between the diapire of pixel boss and the lateral wall in the pixel definition layer is in predetermineeing the within range for the cross-sectional width of the one end that the pixel definition layer is close to the base plate is greater than the cross-sectional width of the one end that the pixel definition layer is far away from the base plate, makes at least one OTFT that is located on the thin film encapsulation layer can receive the light that at least one luminous region sent. Based on the electrical connection relationship between the driving chip and the OTFT, the driving chip can obtain the light intensity indication information of the light emitting region through the leakage current of the OTFT, and based on the reference light intensity indication information obtained in advance and the detected light intensity indication information, the light intensity decrease range of the light emitting region can be determined, and the driving current is compensated accordingly according to the light intensity decrease range of the light emitting region and the comprehensive factors such as the surrounding environment. The driving chip may drive between the first electrode and the second electrode corresponding to each light emitting region to drive the light emitting region to emit light with a driving current based on an electrical connection relationship between the driving chip and the first electrode and the second electrode, respectively. Thereby, can effectively realize the life-span compensation to the OLED device, avoided because the difference between the actual life-span curve of current life-span model and OLED device causes the life-span compensation effect decline problem of OLED device, and cover various types of OLED device, be favorable to reducing the life-span difference of different OLED devices in the OLED display module assembly, make the life-span of different OLED devices in the OLED display module assembly balanced, the display effect of OLED display screen has been promoted, the life-span of OLED display screen has been increased, be favorable to reducing the device cost, thereby the competitiveness of the terminal including the OLED display screen has been improved.

In one possible design, the at least one organic thin film transistor, OTFT, located on the thin film encapsulation layer comprises: at least one OTFT is located in an area other than the orthographic projection area of the entire light emitting area on the thin film encapsulation layer. Therefore, the OTFT can not block the light emitting region, and the reduction of the brightness and the light emitting efficiency of the OLED device is avoided.

In one possible design, the at least one organic thin film transistor, OTFT, located on the thin film encapsulation layer comprises: each light emitting region is provided with at least one OTFT in an area other than the orthographic projection area on the thin film encapsulation layer. Thereby, at least one OTFT is enabled to monitor the light intensity of each OLED device to compensate for the lifetime of all OLED devices in the OLED display screen.

In one possible design, the at least one organic thin film transistor, OTFT, located on the thin film encapsulation layer comprises: the top wall of each pixel boss is provided with an OTFT in the orthographic projection area on the thin film packaging layer. Therefore, the corresponding OTFT is arranged on the basis of the relatively fixed position of each pixel boss, so that each OTFT can effectively detect the light intensity of the OLED device, and the space and the device cost are also saved.

In one possible design, the at least one organic thin film transistor, OTFT, located on the thin film encapsulation layer comprises: and the top wall of the pixel boss corresponding to the same direction of the light emitting region emitting the light with the same wave band is provided with an OTFT in the orthographic projection region on the thin film packaging layer. Therefore, the operation and the manufacturing process are simplified.

In one possible design, the at least one organic thin film transistor, OTFT, located on the thin film encapsulation layer comprises:

at least one OTFT is arranged in the area of each light emitting area emitting light with the preset waveband, which is outside the orthographic projection area on the thin film packaging layer.

In one possible design, the predetermined response band of at least one OTFT is: the same wavelength band as, or within the wavelength band of, the light impinging on the at least one OTFT, such that the OTFT may absorb light emitted by any one OLED device without absorbing light emitted by OLED devices adjacent to that OLED device. Therefore, the light intensity of the OELD device can be accurately determined by the leakage current of the OTFT, and the effective compensation of the service life of the OLED device is realized.

In one possible design, the predetermined response band includes: the full width at half maximum is 10nm-50nm, the response peak is 440nm-480nm, the response peak is 520nm-570nm or the response peak is 610nm-650 nm. Accordingly, the wavelength band that the corresponding sub-pixel of the OELD device can include is sufficiently considered.

In one possible design, the predetermined range is greater than 0 ° and equal to or less than 30 °. Therefore, the cross-sectional width of one end, close to the substrate, of the pixel defining layer is larger than that of one end, far away from the substrate, of the pixel defining layer, namely the pixel defining layer is in a structure with a narrow upper part and a wide lower part, so that light emitted by the OLED device can be irradiated on the OTFT, and the light intensity of the OLED device is sensed by detecting leakage current of the OTFT.

In one possible design, the second electrodes on each organic light emitting layer are electrically connected together. Therefore, the cathode layer is formed, the continuity of the cathode is ensured, the same voltage is favorably provided for the OLED devices, the cathode layer can cover all the organic light emitting layers of the OLED devices in the OELD display screen, and the light emitting efficiency of the OLED devices is ensured.

In one possible design, the second electrodes electrically connected together are patterned in an area other than the entire light-emitting area. Therefore, the patterned cathode layer can cover the light emitting areas corresponding to all OLED devices in the OLED display screen, and the mask cost is saved.

In one possible design, the second electrodes electrically connected together are patterned in the corresponding area of the top wall of each pixel boss, so as to save the mask cost.

In a second aspect, the present application provides an OLED display screen, comprising: a cover plate, a back plate and the OLED display module in any one of the possible designs of the first aspect and the first aspect; the OLED display module is located between the back plate and the cover plate.

The beneficial effects of the OLED display screen provided in the second aspect and the possible designs of the second aspect may refer to the beneficial effects brought by the possible embodiments of the first aspect and the first aspect, and are not described herein again.

In a third aspect, the present application provides a terminal, comprising: the housing assembly and the OLED display screen of any one of the possible designs of the second aspect and the second aspect; the OLED display screen is located inside the shell assembly.

The beneficial effects of the terminal provided in the third aspect and the possible designs of the third aspect may refer to the beneficial effects brought by the possible embodiments of the second aspect and the second aspect, and are not described herein again.

In a fourth aspect, the present application provides a method for automatically adjusting the brightness of an OLED, the method including: obtaining light intensity indicating information corresponding to the detected light emitting area of the organic light emitting diode OLED, wherein the light intensity indicating information is used for indicating the light intensity of the detected light emitting area; determining a driving current of the light emitting region based on reference light intensity indicating information obtained in advance and detected light intensity indicating information; the indication drives the light emitting region to emit light with a certain driving current.

According to the method for automatically adjusting the brightness of the OLED provided by the fourth aspect, the light intensity decreasing range of the light emitting region is determined according to the pre-obtained reference light intensity indicating information and the detected light intensity indicating information, and the driving current is compensated according to the light intensity decreasing range of the light emitting region and the surrounding environment. Therefore, the indication drives the light emitting area to emit light with the determined driving current, the automatic brightness compensation of the OLED device is realized, the problem that the service life compensation effect of the OLED device is reduced due to the difference between the existing service life model and the actual service life curve of the OLED device is solved, various types of OLED devices are covered, the reduction of the service life difference of different OLED devices in the OLED display screen is facilitated, the service lives of different OLED devices in the OLED display screen are balanced, the display effect of the OLED display screen is improved, the service life of the OLED display screen is prolonged, the reduction of the device cost is facilitated, and the competitiveness of a terminal comprising the OLED display screen is improved.

In one possible design, determining the driving current of the light emitting region based on reference light intensity indicating information obtained in advance and detected light intensity indicating information includes: determining a ratio of reference light intensity indication information obtained in advance and detected light intensity indication information; and determining the driving current by a table look-up mode or a corresponding relation between the ratio and the driving current. Thereby, various possibilities are provided for determining the drive current in order to choose a more accurate way to determine the drive current.

In a fifth aspect, the present application provides an electronic device, comprising: a memory and a processor;

the memory is used for storing program instructions;

the processor is used for calling the program instructions in the memory to execute the method for automatically adjusting the brightness of the OLED in the fourth aspect and any one of the possible designs of the fourth aspect.

In a sixth aspect, the present application provides a computer-readable storage medium, on which a computer program is stored, wherein the computer program, when executed by a processor, implements the method for automatically adjusting the brightness of an OLED in any one of the possible designs of the fourth aspect and the fourth aspect.

In a seventh aspect, the present application provides a computer program product comprising: and executing instructions, where the executing instructions are stored in a readable storage medium, where the executing instructions can be read by at least one processor of the electronic device, and the executing instructions by the at least one processor cause the electronic device to implement the method for automatically adjusting the brightness of the OLED in any one of the possible designs of the fourth aspect and the fourth aspect.

In an eighth aspect, the present application provides a chip, where the chip is connected to a memory, or a memory is integrated on the chip, and when a software program stored in the memory is executed, the method for automatically adjusting the brightness of the OLED in any one of the possible designs of the fourth aspect and the fourth aspect is implemented.

Drawings

Fig. 1a is a schematic structural diagram of a terminal according to an embodiment of the present application;

fig. 1b is a schematic structural diagram of an OLED display panel according to an embodiment of the present application;

fig. 2a is a schematic structural diagram of a display area according to an embodiment of the present application;

FIG. 2b is a schematic view of a sub-pixel arrangement of an OLED display panel according to an embodiment of the present disclosure;

FIG. 3a is a schematic cross-sectional view of an OLED display panel according to an embodiment of the present application;

FIG. 3b is a schematic cross-sectional view of an OLED display panel according to an embodiment of the present application;

FIG. 4a is a schematic diagram of a second electrode in an OLED display panel according to an embodiment of the present disclosure;

FIG. 4b is a schematic diagram of a second electrode in an OLED display panel according to an embodiment of the present disclosure;

FIG. 5a is a schematic diagram of an OTFT in an OLED display screen provided in an embodiment of the present application;

FIG. 5b is a schematic diagram of an OTFT in an OLED display screen provided in an embodiment of the present application;

FIG. 6 is a schematic cross-sectional view of an OLED display panel according to an embodiment of the present application;

fig. 7 is a schematic flowchart illustrating a method for automatically adjusting the brightness of an OLED according to an embodiment of the present disclosure;

fig. 8 is a schematic hardware structure diagram of an electronic device according to an embodiment of the present application.

Description of reference numerals:

1-a housing assembly; 2-OLED display screen; 3-an optical device;

10-a cover plate; 20, an OLED display module; 30-a back plate;

a1 — display area; a2 — peripheral area;

21-pixels; 211-sub-pixel; b1 — light emitting region; b2 — non-light emitting region; 212-a driver chip;

221-a substrate; 222-a substrate; 23-an OLED device; 231 — a first electrode; 232 — organic light emitting layer; 233 — a second electrode; 234-other film layers; 24-pixel definition layer; 241-pixel openings; 242-pixel panel; 25-thin film encapsulation layer; 26-OTFT.

Detailed Description

In the present application, "at least one" means one or more, "a plurality" means two or more. "and/or" describes the association relationship of the associated objects, meaning that there may be three relationships, e.g., a and/or B, which may mean: a exists alone, A and B exist simultaneously, and B exists alone, wherein A and B can be singular or plural. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship. "at least one of the following" or similar expressions refer to any combination of these items, including any combination of the singular or plural items. For example, at least one (one) of a alone, b alone, or c alone, may represent: a alone, b alone, c alone, a and b in combination, a and c in combination, b and c in combination, or a, b and c in combination, wherein a, b and c may be single or multiple.

Furthermore, the terms "central," "longitudinal," "lateral," "upper," "lower," and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only used for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

Furthermore, unless expressly stated or limited otherwise, the term "coupled" is intended to be inclusive, e.g., "coupled" may be fixedly coupled, detachably coupled, or integrally formed; may be directly connected or indirectly connected through an intermediate.

The application provides an OLED display module, OLED display screen, terminal and OLED luminance automatically regulated's method, utilize Organic Thin Film Transistor (OTFT) as the sensor that detects the luminous intensity of OLED device, through the luminous intensity indicating information that the luminous zone that compares OLED device corresponds detected and the benchmark luminous intensity indicating information that obtains in advance, judge that whether the OLED device takes place luminance reduction after using, and carry out corresponding compensation to the drive current of luminous zone according to comprehensive factors such as the luminous intensity decline range of OLED device and surrounding environment. From this, carry out effective compensation to the life-span of OLED device, avoided because the difference between the actual life curve of current life-span model and OLED device causes the problem that the life-span compensation effect of OLED device descends, and covered various types of OLED device, be favorable to reducing the life-span difference of different OLED devices in the OLED display module assembly, make the life-span of different OLED devices balanced in the OLED display module assembly, the display effect of OLED display screen has been promoted, the life-span of OLED display screen has been increased, be favorable to reducing the device cost, thereby the competitiveness at the terminal including the OLED display screen has been improved.

The terminal may include, but is not limited to, a mobile phone, a tablet computer, an e-reader, a remote controller, a Personal Computer (PC), a notebook computer, a Personal Digital Assistant (PDA), a vehicle-mounted device, a web tv, a wearable device, a television, a smart watch, a smart bracelet, and other products having a display interface. For convenience of explanation, the following embodiments are illustrated with a terminal as a mobile phone.

As shown in fig. 1a, a terminal may include; a housing assembly 1 and an OLED display screen 2. The housing assembly 1 is used for carrying and protecting the OLED display screen 2. The OLED display screen 2 is located inside the housing assembly 1. The OLED display 2 may be used for an active-matrix organic light-emitting diode (AMOLED) display scene or a micro-LED display scene, and the OLED display 2 may be various self-emitting displays, which is not limited in this application.

As shown in fig. 1b, the OLED display screen 2 may include a cover plate 10, an OLED display module 20, and a back plate 30. The OLED display module 20 is located between the back plate 10 and the cover plate 20. Wherein, apron 10 plays the effect of protection OLED display module assembly 20, can ensure OLED display module assembly 20's luminous performance and reliable performance when OLED display module assembly 20's thickness is less, can also ensure OLED display module assembly 20's the performance of buckling, avoids buckling fracture scheduling problem. The back plate 30 plays a supporting role, and can realize the fixed arrangement of the OLED display module 20. Generally, the back plate 10 and the OLED display module 20 and the cover plate 20 and the OLED display module 20 may be bonded by using an optical adhesive such as an oca (optical clear adhesive).

In addition, as shown in fig. 1a, the terminal may further include: an optical device 3. The optical device 3 is disposed on a side of the back surface of the OLED display screen 2 opposite to the light exit surface, and a light receiving surface of the optical device 3 faces the OLED display screen 2. Wherein the optical device 3 comprises a component of a light sensitive sensor. For example, the optical device 3 may be a flash, a camera, a proximity light sensor, an ambient light sensor, a fingerprint sensor, or the like.

As shown in fig. 2a, the OLED display module 20 has a display area a1 for displaying image frames, and a peripheral area a2 located at the periphery of the display area a 1. The shapes and relative positions of the display region a1 and the peripheral region a2 are not limited in the present application. For convenience of explanation, fig. 2a illustrates an example in which the peripheral region a2 surrounds the display region a 1.

Since the OLED display module 20 is self-luminous, as shown in fig. 2b, the display region a1 is provided with a plurality of sub-pixels 211 arranged in a matrix form. The shape and specific arrangement of the sub-pixels 211 are not limited in this application. Each pixel 21 includes at least three sub-pixels 211 for displaying three primary colors, respectively. For convenience of illustration, fig. 2b illustrates an example in which one pixel 21 includes one rounded rectangular red sub-pixel filled with crossed lines, one hollow rounded rectangular blue sub-pixel, and two circular green sub-pixels filled with a plurality of dots in a dashed box.

In addition, each sub-pixel 211 may be divided into a light-emitting region B1 and a non-light-emitting region B2. The light emitting region B1 in each sub-pixel 211 is obtained by emitting light through the OLED device 23, and the OLED device 23 can emit light under the driving action of the driving chip 212 (not shown in fig. 3a and 3B).

In this application, the driving chip 212 may be a circuit composed of a plurality of components, or may be an integrated chip, which is not limited in this application. In addition, the driving chip 212 may include a data memory, an input/output interface, and the like, in addition to the pixel driving circuit for driving the OLED device 23 to emit light. The pixel driving circuit may include, but is not limited to, an architecture of 2T1C, 7T1C, 6T1C, or 6T 2C.

As shown in fig. 3a and 3b, the OLED display module 20 may include: a substrate 221. Here, the TFT in the pixel driving circuit and the capacitor may be disposed in the substrate 221.

In addition, continuing with fig. 3a and 3b, optionally, the OLED display module 20 of the present application may further include: and the substrate 222 is located on one side of the substrate 221 away from the light-emitting surface of the OLED display module 20. The substrate 222 may be made of, but not limited to, glass, quartz, resin, metal, or the like. For example, the resin substrate may be a polyethylene terephthalate (PET), a polycarbonate resin, polymethyl methacrylate (PMMA), or the like.

In the light emitting region B1, the OLED device 23 electrically connected to the driving chip 212 is disposed, the OLED device 23 may include a plurality of first electrodes 231 (fig. 3a and 3B are illustrated by way of example in fig. 3a and 3B), a plurality of organic light emitting layers 232 (fig. 3a and 3B are illustrated by way of example in fig. 3a and 3B), and a plurality of second electrodes 233 (fig. 3a and 3B are illustrated by way of example in which the plurality of electrodes 233 are electrically connected together), the first electrodes 231 and the second electrodes 233 are located at both sides of the organic light emitting layers 232, each of the second electrodes 233 is electrically connected to a pixel driving circuit in the driving chip 212, such that the second electrodes 233 are common to the pixel driving circuit in the driving chip 212, and each of the second electrodes 233 may be located on one of the organic light emitting layers 232 and cover the organic light emitting layer 232.

The thickness and material of the organic light emitting layer 232 depend on the performance requirements of the OLED device 23, among others. For example, the organic light emitting layer 232 may be a red light emitting layer to form a red subpixel. The organic light emitting layer 232 may be a blue light emitting layer to form a blue subpixel. The organic light emitting layer 232 may be a green light emitting layer to form a green subpixel.

For convenience of illustration, the first electrode 231 is an anode (anodic, a) and the second electrode 233 is a cathode (cathode, c). The material of the first electrode 231 may be a metal material. For example, silver (Ag), Indium Tin Oxide (ITO), and the like. The material of the second electrode 233 may be a translucent or fully transparent conductive material. For example, silver magnesium alloy (AgMg), silver (Ag), magnesium (Mg), aluminum (Al), ITO, Indium Zinc Oxide (IZO), and the like.

Based on this, the first electrode 231 is electrically connected to the driving transistor of the pixel driving circuit in the driving chip 212, and after the pixel driving circuit in the driving chip 212 applies a voltage to the first electrode 231 and the second electrode 233, based on the electrical connection relationship between the pixel driving circuit in the driving chip 212 and each first electrode 231, the first electrode 231 can receive the driving current generated by the driving transistor, and further the carriers in the first electrode 231 and the second electrode 233 meet in the organic light emitting layer 232 and excite photons, so that the organic light emitting layer 232 emits light under the driving action of the driving current. Since the light transmittance of the first electrode 231 is relatively low and the second electrode 233 is transparent, the light emitted by the OLED device 23 can be emitted from the side where the second electrode 233 is located along the light emitting direction AA, so that the OLED display module 20 including a plurality of OLED devices 23 can display an image.

It will be understood by those skilled in the art that the second electrodes 233 of the OLED devices 23 in the respective sub-pixels 211 are generally connected to the same voltage, such as the low-level power supply voltage ELVSS. Therefore, in order to ensure the continuity of the cathode, optionally, in the present application, the second electrodes 233 of the OLED devices 23 in different sub-pixels 211 may be electrically connected together to form a cathode layer, which is beneficial to provide the same voltage to the OLED devices 23, and also enables the cathode layer to cover the organic light emitting layers 232 of all the OLED devices 23 in the OELD display panel 20, thereby ensuring the light emitting efficiency of the OLED devices 23.

The cathode layer may be prepared by using a whole film layer without a patterning process as shown in fig. 4a to simplify the process flow, or may be prepared by using a non-light-emitting region B2 in the cathode layer as shown in fig. 4B to perform a patterning process, so that the patterned cathode layer can cover all light-emitting regions B1 corresponding to all OLED devices 23 in the OLED display module 20, thereby saving the mask cost. For further explanation, the second electrode 233 in fig. 3a is a whole-surface film layer as shown in fig. 4a, and the second electrode 233 in fig. 3b is a patterned cathode layer as shown in fig. 4 b.

In addition, in consideration of the product cost, brightness, and light emitting efficiency of the OLED display module 20, the OLED device 23 may be provided with other film layers 234 such as an electron transport layer and a hole transport layer for balancing electrons and holes, and an electron injection layer and a hole injection layer for enhancing injection of electrons and holes, in addition to the first electrode 231, the organic light emitting layer 232, and the second electrode 233. In general, the hole injection layer, the hole transport layer, the organic light emitting layer 232, the electron transport layer, and the electron injection layer may be sequentially stacked. Alternatively, the electron injection layer, the electron transport layer, the organic light emitting layer 232, the hole transport layer, and the hole injection layer may be sequentially stacked. The other film layers 234 may be selectively patterned to save the mask cost, or may be prepared by using a full-surface film layer without performing the patterning process to simplify the process flow.

During the process of displaying the image frame by the OLED display module 20, the color or brightness of the light emitted by the different sub-pixels 211 may be different. Therefore, in order to prevent the light emitted by the adjacent sub-pixels 211 from mixing, with reference to fig. 3a and 3b, the OLED display module 20 may further include: a pixel definition layer 24 (PDL). Generally, the pixel defining layer 24 is a single layer structure, and is made of Polyimide (PI). Of course, the pixel definition layer 24 may also have a multi-layer structure, which is not limited in this application.

In this application, the pixel defining layer 24 may have a plurality of pixel openings 241 and pixel bosses 242 arranged at intervals. A first electrode 231 is exposed at the bottom of one pixel opening 241 such that a plurality of first electrodes 231 are disposed at intervals on the substrate 221. Here, the area of each first electrode 231 is generally equal to or greater than the area of the light-emitting region B1. And each organic light emitting layer 232 is located in one pixel opening 241, each second electrode 233 corresponds to one organic light emitting layer, and each second electrode 233 covers the corresponding organic light emitting layer 233 completely. Thus, each pixel aperture 241 is used to define the light-emitting region B1 and the non-light-emitting region B2 of each sub-pixel 211, the region corresponding to the pixel aperture 241 is the light-emitting region B1, and the region other than the pixel aperture 241 is the non-light-emitting region B2, so that the pixel defining layer 24 can define the shape and size of the light-emitting region B1 of each sub-pixel 211.

Based on the above description, the pixel defining layer 24 is not only configured to ensure that the subsequently formed organic light emitting layer 232 can cover at least the pixel opening 241, i.e. the organic light emitting layer 232 is disposed in the pixel opening 241, so as to ensure the light emitting efficiency of the OLED device 23. Here, each organic light emitting layer 232 may entirely cover the light emitting region B1, i.e., be disposed in each pixel opening 241 (as shown in fig. 3a and 3B), or entirely cover the first electrode 231, i.e., be disposed in each pixel opening 241 and be laid along the sidewall of the pixel boss 242 adjacent to the pixel opening 241.

Meanwhile, the pixel defining layer 24 is disposed to ensure that the second electrode 233 formed subsequently can be continuously laid along the sidewall of the pixel defining layer 24, so that the cathode can be continuous. In addition, when the second electrode 233 is patterned, the second electrode 233 may be patterned in a region corresponding to the top wall of each pixel boss 242, as shown in fig. 3b, so as to save mask cost.

In order to avoid exposing the OLED device 23 to moisture or oxygen, the OLED display module 20 may further include, in combination with fig. 3a and 3 b: the thin film encapsulation layer 25 is located above the plurality of second electrodes 233, and the thin film encapsulation layer 25 fills each pixel opening 241, which is not only helpful to isolate water vapor and oxygen around the OLED device 23, but also enhances the adhesion between the thin film encapsulation layer 25 and the second electrodes 233, improves the anti-shearing capability of the OLED display module 20, and reduces or avoids the separation or position deviation between the thin film encapsulation layer 25 and the second electrodes 233 and between the film layers in the OLED device 23.

The thin film encapsulation layer 25 may include one or more layers. For convenience of illustration, the thin film encapsulation layer 25 is illustrated as a three-layer structure. The thin film encapsulation layer 25 may adopt an organic film layer, an inorganic film layer, or a stacked structure of the organic film layer and the inorganic film layer. The thickness of the thin film encapsulation layer 25 is not limited, and the thickness is adjusted according to the material, the process level and the actual requirement of the thin film encapsulation layer 25. And the top surface of the thin film encapsulation layer 25 may be flat (as shown in fig. 3a and 3 b) or may have a certain slope, which is not limited in this application. Generally, the flatness of the top surface of the thin film encapsulation layer 25 is adjusted by the thickness of the organic film layer in the thin film encapsulation layer 25.

As will be appreciated by those skilled in the art, the leakage current of an OTFT increases with increasing light intensity. Based on the above description, with continuing reference to fig. 3a and 3b, the OLED display module 20 may further include: at least one OTFT 26.

Wherein at least one OTFT 26 is located on the thin film encapsulation layer 25 and is capable of receiving light emitted from the light emitting region B1 of at least one sub-pixel 211. And at least one OTFT 26 may be electrically connected to a circuit for driving the OTFT 26 in the OLED display module 20 through a wire, so that the circuit controls the OTFT 26 to be turned on or off. In addition, the OTFT 26 may adopt a top gate structure or a bottom gate structure, which is not limited in this application.

Since the pixel defining layer 24 may define the shape and size of the light emitting region B1 of each subpixel 211, the OTFT 26 needs to receive light emitted by the OLED device 23. Therefore, the included angle θ between the sidewall and the bottom wall of each pixel boss 242 is set within a predetermined range, such that the cross-sectional width of the end of the pixel defining layer 24 close to the substrate 221 is larger than the cross-sectional width of the end of the pixel defining layer 24 away from the substrate 221, that is, the pixel defining layer 24 has a structure with a narrow top and a wide bottom, so that light emitted from the OLED device 23 can irradiate on the OTFT 26, and the light intensity of the OLED device 23 can be sensed by detecting the leakage current of the OTFT 26.

The included angle θ between the sidewall and the bottom wall of each pixel boss 242 may be the same or different, and is specifically set in combination with an actual manufacturing process. And the size of the preset range is not limited in the application. Alternatively, the preset range may be set to be greater than 0 ° and equal to or less than 30 °. And the size and shape of the pixel opening 241 and the pixel boss 242 are not limited in this application. For example, a longitudinal section of the pixel boss 242 perpendicular to the surface of the substrate 221 and parallel to the width direction of the pixel defining layer 24 may be a trapezoid or an irregular shape. For convenience of description, the longitudinal section of the pixel boss 242 in the present application is illustrated by an isosceles trapezoid.

In order to realize the life compensation of the OLED device 23, in the present application, the driving chip 212 can obtain the light intensity indication information of the light emitting region B1 through the leakage current of the OTFT 26, and based on the reference light intensity indication information obtained in advance and the detected light intensity indication information, can determine the reduction range of the light intensity of the light emitting region B1, and correspondingly compensate the driving current according to the reduction range of the light intensity of the light emitting region B1 and the comprehensive factors such as the surrounding environment.

Accordingly, the driving chip 212 may instruct the pixel driving circuit to drive the light emitting region B1 to emit light between the first electrode 231 and the second electrode 233 corresponding to each light emitting region B1, so as to achieve brightness compensation of the OLED device 23, and achieve the effect of prolonging the lifetime of the OLED device 23.

In a specific embodiment, if the light intensity indicating information is represented by light intensity, the specific content of driving the light emitting region B1 by the driving current between the first electrode 231 and the second electrode 233 corresponding to each light emitting region B1 of the driving chip 212 is as follows:

step 1: the driving chip 212 may obtain factory light intensity L of the OLED device 23 obtained through factory test after the OLED device 23 is produced_BL。

Step 2: after the OLED device 23 is used for a period of time t, the driving chip 212 determines the current ambient light intensity L by detecting the leakage current of the OTFT 26_BG. When the driving chip 212 emits light again from the OLED device 23, the current ambient light intensity L is determined by detecting the leakage current of the OTFT 26_BGLight intensity L with OLED device 23_ELSum L_BG+L_EL. Then, the driver chip 212 uses the current ambient light intensity L_BGLight intensity L with OLED device 23_ELSum L_BG+L_ELMinus the current ambient light intensity L_BGTo obtain the light intensity L of the OLED device 23_EL。

And step 3: the driving chip 212 is based on the factory light intensity L of the OLED device 23_BLAnd the light intensity L of the OLED device 23_ELIf L is calculated_EL/L_BLOr (L)_EL－L_BL)/L_BLThe life reduction range of the OLED device 23 after a period of time t is determined by the ratio and the like, and the driving current of the OLED device 23 is determined by looking up a table or a preset corresponding relationship and the like.

And 4, step 4: the driving chip 212 instructs the pixel driving circuit to drive the OLED device 23 to emit light with the driving current of the OLED device 23, so as to realize brightness compensation of the OLED device 23, thereby achieving the effect of prolonging the lifetime of the OLED device 23.

For convenience of operation, optionally, the capacitor may be electrically connected to the OTFT 26, and the driving chip 212 may represent a change of the leakage current of the OTFT 26 by detecting the charge amount Q of the capacitor, so that the driving chip 212 may obtain the light intensity of the OLED device 23. In general, the stronger the light intensity, the larger the charge amount Q of the capacitor. The electrical connection between the capacitor and the OTFT 26 is not limited in this application.

It should be noted that, besides the capacitance detection method, the present application may also characterize the change of the leakage current of the OTFT 26 by other detection methods, so as to obtain the light intensity of the OLED device 23. In addition, the circuit for driving the OTFT 26 and the pixel driving circuit in the driving chip 212 are two circuits for implementing different functions, and the two circuits may be integrated on one circuit board or may be respectively disposed on different circuit boards, which is not limited in this application. Of course, the circuitry for driving the OTFT 26 and the pixel driving lines in the driving chip 212 may be implemented by one chip or circuit. And the circuit for driving the OTFT 26 may be integrated in the driving chip 212, or may be disposed separately from the driving chip 212, which is not limited in this application.

The application provides an OLED display module assembly, the contained angle between the diapire through the pixel boss in the pixel definition layer and the lateral wall is in presetting the within range for the cross sectional width that the pixel definition layer is close to the one end of base plate is greater than the cross sectional width that the pixel definition layer kept away from the one end of base plate, makes at least one OTFT that is located on the film packaging layer can receive the light that at least one luminous region sent. Based on the electrical connection relationship between the driving chip and the OTFT, the driving chip can obtain the light intensity indication information of the light emitting region through the leakage current of the OTFT, and based on the reference light intensity indication information obtained in advance and the detected light intensity indication information, the light intensity decrease range of the light emitting region can be determined, and the driving current is compensated accordingly according to the light intensity decrease range of the light emitting region and the comprehensive factors such as the surrounding environment. The driving chip may drive between the first electrode and the second electrode corresponding to each light emitting region to drive the light emitting region to emit light with a driving current based on an electrical connection relationship between the driving chip and the first electrode and the second electrode, respectively. Thereby, can effectively realize the life-span compensation to the OLED device, avoided because the difference between the actual life-span curve of current life-span model and OLED device causes the life-span compensation effect decline problem of OLED device, and cover various types of OLED device, be favorable to reducing the life-span difference of different OLED devices in the OLED display module assembly, make the life-span of different OLED devices in the OLED display module assembly balanced, the display effect of OLED display screen has been promoted, the life-span of OLED display screen has been increased, be favorable to reducing the device cost, thereby the competitiveness of the terminal including the OLED display screen has been improved.

On the basis of the above embodiments, the present application does not limit the position, number, size, shape, and other parameters of the OTFT 26. Alternatively, the OTFT 26 may be located in an area (i.e., the non-light-emitting area B2) other than the orthographic projection area of the entire light-emitting area B1 on the thin-film encapsulation layer 25, so that the OTFT 26 does not block the light-emitting area B1 of at least one sub-pixel 211, avoiding causing a reduction in the luminance and light-emitting efficiency of the OLED device 23.

In order to realize the lifetime compensation of each OLED device 23 in the OLED display module 20, optionally, the region (i.e., the non-light-emitting region B2) of each light-emitting region B1 outside the orthographic projection region on the thin film encapsulation layer 25 is provided with at least one OTFT 26, i.e., the non-light-emitting region B2 of each sub-pixel 211 is provided with at least one OTFT 26, so that the at least one OTFT 26 can monitor the light intensity of each OLED device 23 to compensate for the lifetime of all OLED devices 23 in the OLED display module 20.

For example, taking a blue sub-pixel of one pixel 21 shown in fig. 2b as an example, the specific location of the OTFT 26 is illustrated with reference to fig. 5 a. As shown in fig. 5a, since the periphery of the light emitting region B1 of the blue sub-pixel is included in the non-light emitting region B2 of the blue sub-pixel, the OTFT 26 may be disposed around the light emitting region B1 of the blue sub-pixel, and the OTFT 26 is illustrated as being located above, below, left, and right of the blue sub-pixel.

Since the position of each pixel boss 242 is relatively fixed, in order to save space and device cost, optionally, the top wall of each pixel boss 242 is provided with one OTFT 26 in the orthographic projection area on the thin film encapsulation layer 25, so that each OTFT 26 can effectively detect the light intensity of the OLED device 23. For ease of illustration, the OTFT 26 is illustrated in FIGS. 3a and 3b using this arrangement as an example.

In addition, since the wavelength band of the light emitted from the light emitting region B1 and the position of each pixel boss 242 are relatively fixed, for convenience of operation and simplification of the manufacturing process, optionally, the top wall of the pixel boss 242 corresponding to the same orientation of the light emitting region B1 emitting the light of the same wavelength band is provided with one OTFT 26 in the orthographic projection region on the thin film encapsulation layer 25.

The present application does not limit the specific orientation of the light-emitting region B1. E.g., above, below, left, right, etc., of the sub-pixels. The OTFTs 26 corresponding to the sub-pixels 211 emitting light of different wavelength bands may be located in the same direction, for example, the OTF corresponding to the red sub-pixel may be located on the left of the red sub-pixel and the OTF corresponding to the green sub-pixel may be located on the left of the green sub-pixel, or may be located in different directions, for example, the OTF corresponding to the red sub-pixel may be located on the left of the red sub-pixel and the OTF corresponding to the green sub-pixel may be located above the green sub-pixel, which is not limited in this application.

Because the service lives of the red sub-pixel, the green sub-pixel and the blue sub-pixel are different, the service life compensation of a part of OLED devices 23 in the OLED display module 20 can be selectively realized, and the device cost is saved. Optionally, each of the light emitting areas B1 emitting light of a predetermined wavelength band is provided with at least one OTFT 26 in an area other than the orthographic projection area on the thin film encapsulation layer 25. The preset wavelength band may be a wavelength band of light emitted by any one of the red sub-pixel, the green sub-pixel and the blue sub-pixel, or a superposition range of wavelength bands of light emitted by any two of the red sub-pixel, the green sub-pixel and the blue sub-pixel. Thus, at least one OTFT 26 is enabled to monitor the light intensity of a portion of the OLED devices 23 to compensate for the lifetime of a portion of the OLED devices 23 in the OLED display module 20.

For example, the lifetime of the blue sub-pixel is the shortest compared to the red and green sub-pixels. Therefore, the light band emitted by the blue sub-pixels can be set as the preset band, so that the service life of the OLED device 23 in each blue sub-pixel in the OLED display module 20 can be compensated by at least one OTFT 26, the effect of balancing the service life of each OLED device 23 in the OLED display module 20 is achieved, the service life of the OLED display module 20 is prolonged, and the device cost is saved.

In the present application, for example, in the case where the OTFT 26 disposed in the non-light-emitting region B2 of any one of the sub-pixels 211 detects the light intensity of the sub-pixel 211 corresponding to the light-emitting region B1 located on the left side with respect to the OTFT 26 located at the middle position in fig. 6, as shown in fig. 6, since the non-light-emitting region B2 of the sub-pixel 211 is also the non-light-emitting region B2 of the sub-pixel 211 adjacent to the sub-pixel 211 (i.e., the sub-pixel 211 of the light-emitting region B1 located on the right side), when the light intensity of the OLED device 23 in the sub-pixel 211 is detected by the OTFT 26, the light emitted from the OLED device 23 in the sub-pixel 211 is irradiated onto the OTFT 26, and the light emitted from the OLED device 23 in the sub-pixel 211 adjacent to the sub-pixel 211 is also irradiated onto the OTFT 26. Thus, the present application needs to remove the portion of the leakage current mixed into the OTFT 26, so as to accurately determine the light intensity of the OELD device in the subpixel 211 through the removed leakage current of the OTFT 26.

Based on this, in order to improve compensation efficiency and simplify operation, optionally, the application may set the OTFT 26 to absorb light within the preset response band, but not absorb light outside the preset response band, so that the OTFT 26 can only detect the light intensity of light within the preset response band, and the preset response band may be the same as the band of light irradiated on the OTFT 26, or within the band of light irradiated on the OTFT 26, so that the OTFT 26 may absorb light emitted by the OLED device 23 in any one subpixel 211, but not absorb light emitted by the OLED device 23 in the subpixel 211 adjacent to the subpixel 211. Thus, the leakage current of the OTFT 26 can accurately determine the light intensity of the OELD device 23 in the subpixel 211, and the effective compensation of the lifetime of the OLED device 23 in the subpixel 211 is realized.

In particular, the photosensitive material in the OTFT 26 may be provided as a material within the predetermined response band such that the OTFT 26 absorbs light within the predetermined response band and does not absorb light outside the predetermined response band. The specific size of the preset response band is not limited in the application. For example, the predetermined response band may be set to be between 10nm and 50nm in full width at half maximum. Alternatively, the specific size of the predetermined response band may be set in accordance with the wavelength of the light emitted from the OLED device 23. For example, the preset response band may be set to be between 440nm and 480nm of the response peak, or between 520nm and 570nm of the response peak, or between 610nm and 650nm of the response peak.

In addition, since the lifetime of the blue sub-pixel is generally the shortest compared to the red sub-pixel and the green sub-pixel, in order to save the device cost, in the present application, at least one OTFT 26 is disposed in the non-light emitting region B2 of each blue sub-pixel, so as to intensively compensate the lifetime of the OLED device 23 in the blue sub-pixel, and achieve the effect of balancing the lifetime of each OLED device 23 in the OLED display module 20, thereby prolonging the service life of the OLED display module 20.

For example, taking the plurality of sub-pixels 211 shown in fig. 2b as an example, the specific location of the OTFT 26 is illustrated with reference to fig. 5 b. As shown in fig. 5B, since the periphery of the light emitting region B1 of one blue sub-pixel in each sub-pixel 211 is included in the non-light emitting region B2 of the blue sub-pixel, at least one OTFT 26 may be disposed around the light emitting region B1 of each blue sub-pixel, as exemplified by one OTFT 26 located to the right of each blue sub-pixel.

Further, in order to eliminate the effect that the OTFT 26 may absorb light of other colors besides blue, the sensing material in the OTFT 26 may be set to a material with a preset response band between 440nm and 480nm, so that the OTFT 26 can only absorb blue light, but cannot absorb light of other colors, and the OELD device in the blue sub-pixel has a good lifetime compensation effect.

Exemplarily, the application also provides an OLED display screen. The specific implementation manner of the OLED display screen of the present application can refer to the technical solutions in the embodiments shown in fig. 1a to fig. 6, and the implementation principle and the technical effect are similar, wherein the implementation operation of each component may further refer to the related description of the embodiments, and is not described herein again.

Illustratively, the application also provides a terminal. For a specific implementation manner of the terminal of the present application, reference may be made to the technical solutions in the embodiments shown in fig. 1a to fig. 6, and the implementation principles and technical effects are similar, where implementation operations of various components may further refer to relevant descriptions of the embodiments, and are not described herein again.

Illustratively, the application also provides a brightness adjusting method. Fig. 7 is a flowchart illustrating a method for automatically adjusting the brightness of an OLED according to an embodiment of the present disclosure. The main implementation body of the method for automatically adjusting the brightness of the OLED of the present application may be the driving chip in fig. 1a to 6. As shown in fig. 7, the method for automatically adjusting the brightness of an OLED provided by the present application may include:

s101, obtaining light intensity indicating information corresponding to the detected light emitting area of the organic light emitting diode OLED, wherein the light intensity indicating information is used for indicating the light intensity of the detected light emitting area.

S102, based on the reference light intensity indication information and the detected light intensity indication information which are obtained in advance, the driving current of the light-emitting region is determined.

And S103, indicating that the light emitting region is driven to emit light with the determined driving current.

In the application, the driving chip can determine whether the light intensity of the light emitting region is reduced or not, that is, whether the brightness of the OLED device corresponding to the light emitting region is reduced or not after the OLED device is used, based on the reference light intensity indication information and the detected light intensity indication information, and correspondingly compensate the driving current of the light emitting region according to the light intensity reduction range, the surrounding environment and other comprehensive factors.

The light intensity indication information may be represented by at least one of parameters such as current, voltage, resistance, charge amount, light intensity, and the like, which is not limited in this application. For example, the light intensity indicating information may be light intensity corresponding to leakage current of the OTFT corresponding to the light emitting region.

Thereby, the drive chip can instruct the pixel drive circuit in the drive chip to give out light in order to drive the luminous region of emitting based on definite drive current, alright carry out effective compensation to the life-span of OLED device, avoided causing the problem that the life-span compensation effect of OLED device descends because of the difference between the actual life-span curve of current life-span model and OLED device, and covered various types of OLED device, be favorable to reducing the life-span difference of different OLED devices in the OLED display module assembly, make the life-span of different OLED devices in the OLED display module assembly balanced, the display effect of OLED display screen has been promoted, the life-span of OLED display screen has been increased, be favorable to reducing the device cost, thereby the competitiveness of the terminal including the OLED display screen has been improved.

In some embodiments, in one possible implementation manner of the determination driving circuit of S102, the driving chip may determine a ratio of the pre-obtained reference light intensity indication information and the detected light intensity indication information, or a ratio of a difference value between the pre-obtained reference light intensity indication information and the detected light intensity indication information and the pre-obtained reference light intensity indication information. Therefore, the driving current corresponding to the ratio is determined by a table stored in the driving chip in advance or a corresponding relation between the ratio and the driving current. Thereby, various possibilities are provided for determining the drive current in order to choose a more accurate way to determine the drive current.

In a specific embodiment, if the light intensity indication information is light intensity, the pre-obtained reference light intensity indication information may be factory light intensity after the OLED is produced, and the detected light intensity indication information may be light intensity after the OLED device is used. Therefore, the driving chip judges whether the brightness of the OLED device is reduced after the OLED device is used or not by comparing the light intensity of the OLED device after the OLED device is used with the factory light intensity of the OLED device after the OLED device is produced, and correspondingly compensates the driving current of the OLED device according to the light intensity reduction range of the OLED device, the surrounding environment and other comprehensive factors.

The intensity of light after the OLED device is used can be obtained through the following processes:

the drive chip can acquire factory light intensity L of the OLED device obtained through factory test after the OLED device is produced_BL. After the OLED device is used for a period of time t, the current ambient light intensity L is determined by detecting the leakage current of the OTFT through the driving chip_BG. When the drive chip emits light again on the OLED device, the current ambient light intensity L is determined by detecting the leakage current of the OTFT_BGLight intensity L with OLED device_ELSum L_BG+L_EL. Then, the driver chip uses the current ambient light intensity L_BGLight intensity L with OLED device_ELSum L_BG+L_ELMinus the current ambient light intensity L_BGTo obtain an OLED deviceLight intensity L of_EL。

Thus, the driving chip is based on the factory light intensity L of the OLED device_BLAnd the light intensity L of the OLED device_ELIf L is calculated_EL/L_BLOr (L)_EL－L_BL)/L_BLThe service life of the OLED device after a period of time t is used can be determined in the modes of the ratio and the like, and then the driving current of the OLED device is adjusted in the modes of table lookup or preset corresponding relations and the like, so that the brightness compensation of the OLED device is realized, and the effect of prolonging the service life of the OLED device is achieved.

The application further provides an electronic device. Fig. 8 is a schematic structural diagram of an electronic device according to an embodiment of the present application, and as shown in fig. 8, an electronic device 100 of the present application may include:

a memory 101 for storing program instructions, the memory 101 may be a flash (flash memory).

And the processor 102 is configured to call and execute the program instructions in the memory 101 to implement the corresponding steps in the method for automatically adjusting the OLED brightness according to the embodiment shown in fig. 7. Reference may be made in particular to the description relating to the preceding method embodiment.

A communication interface 103, i.e. an input/output interface, may also be included. The communication interface 103 may include a separate output interface and input interface, or may be an integrated interface that integrates input and output. The output interface is used for outputting data, the input interface is used for acquiring input data, the output data is a general name output in the method embodiment, and the input data is a general name input in the method embodiment.

The electronic device may be configured to perform the respective steps and/or flows corresponding to the above method embodiments.

The present application further provides a computer-readable storage medium, on which a computer program is stored, and the computer program, when executed by a processor, implements the method for automatically adjusting the brightness of an OLED according to the above method embodiment.

The present application further provides a computer program product comprising: the at least one processor of the electronic device can read the execution instructions from the readable storage medium, and the execution of the execution instructions by the at least one processor causes the electronic device to implement the method for automatically adjusting the brightness of the OLED according to the above method embodiment.

The application also provides a chip, the chip is connected with the memory, or the memory is integrated on the chip, and when a software program stored in the memory is executed, the method for automatically adjusting the brightness of the OLED of the embodiment of the method is realized.

Those of ordinary skill in the art will understand that: in the above embodiments, the implementation may be wholly or partially realized by software, hardware, firmware, or any combination thereof. When implemented in software, may be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. The procedures or functions according to the embodiments of the present application are all or partially generated when the computer program instructions are loaded and executed on a computer. The computer may be a general purpose computer, a special purpose computer, a network of computers, or other programmable device. The computer instructions may be stored in a computer readable storage medium or transmitted from one computer readable storage medium to another, for example, the computer instructions may be transmitted from one website, computer, server, or data center to another website, computer, server, or data center by wire (e.g., coaxial cable, fiber optic, Digital Subscriber Line (DSL)) or wirelessly (e.g., infrared, wireless, microwave, etc.). The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device, such as a server, a data center, etc., that incorporates one or more of the available media. The usable medium may be a magnetic medium (e.g., floppy Disk, hard Disk, magnetic tape), an optical medium (e.g., DVD), or a semiconductor medium (e.g., Solid State Disk (SSD)), among others.

Finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.